CN112768376B - Wafer cleaning device and wafer cleaning method - Google Patents
Wafer cleaning device and wafer cleaning method Download PDFInfo
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- CN112768376B CN112768376B CN202011630195.XA CN202011630195A CN112768376B CN 112768376 B CN112768376 B CN 112768376B CN 202011630195 A CN202011630195 A CN 202011630195A CN 112768376 B CN112768376 B CN 112768376B
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- carbon dioxide
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- positioner
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a wafer cleaning device and a wafer cleaning method, comprising the steps of placing a wafer on a positioner for positioning; vacuumizing the vacuum generating assembly to enable vacuum to be formed between the positioner and the wafer; the drive component drives the positioner to rotate, so as to drive the wafer to rotate; the controller controls a gas transmission pipeline to transmit liquid carbon dioxide to the corresponding nozzle according to the first cleaning instruction so as to clean the lower surface of the wafer; the liquid carbon dioxide is used for cleaning the lower surface of the wafer and then is changed into gaseous carbon dioxide to enter the recovery cavity, and the recovery cavity recovers the gaseous carbon dioxide. For the device microstructure with high depth-width ratio under the nanometer size of the surface of the wafer, residues such as water molecules and the like can be easily removed, and carbon dioxide not only has an effective cleaning effect, but also has an effective drying effect and can be mixed with other cleaning agents for use.
Description
Technical Field
The present invention relates to the field of wafer manufacturing technologies, and in particular, to a wafer cleaning apparatus and a wafer cleaning method.
Background
The wafer refers to a wafer used for manufacturing a silicon semiconductor circuit, and the wafer cleaning process is a process for removing pollutants generated by contacting various organic matters, particles and metals in the process of continuously processing, shaping and polishing the wafer. Is an important process step in the wafer manufacturing process.
In a semiconductor cleaning process, particularly in a high-level wafer product such as a wafer product related to a logic integrated circuit, a memory, a power device and the like, in a manufacturing process, a process related to various complicated photolithography, a wet process, deposition, oxidation and the like is performed, and a process of cleaning a substrate is performed before or after each process to remove foreign matters and particles generated in each process, thereby ensuring the accuracy and reproducibility of the subsequent process yield.
In the semiconductor wet process required by the related 65-14nm pitch and the wafer product corresponding to the pitch of less than 14nm and up to 5nm, especially under the action of the size effect, the core problem of the wafer wet process is that liquid remains in the nano-sized high aspect ratio microstructure, the possible liquid tension cannot be effectively improved, and the high aspect ratio microstructure is difficult to clean, and the wafer cleaning device in the prior art has a non-compact structure, and cannot realize multi-condition spray cleaning.
Disclosure of Invention
The invention provides a wafer cleaning device and a wafer cleaning method, and aims to solve the technical problems that a wafer high-aspect-ratio microstructure is difficult to clean in the prior art and the like.
A wafer cleaning device for cleaning the lower surface of a wafer, comprising:
a positioner for positioning the wafer,
the driving assembly is used for driving the positioner to rotate;
the vacuum generating assembly is arranged on the positioner and enables vacuum to be formed between the positioner and the wafer;
a cleaning assembly positioned between the positioner and the wafer, the cleaning assembly comprising:
the mounting seat is arranged on the positioner;
the nozzles are arranged in the mounting seat in an inclined manner and are arranged on the lower surface of the wafer;
each nozzle is respectively connected with a gas transmission pipeline for transmitting cleaning agent to the nozzle, wherein the cleaning agent comprises liquid carbon dioxide;
the recovery cavity comprises a plurality of recovery rings and is used for recovering the cleaning agent after the wafer is cleaned;
the controller is used for controlling a gas pipeline to convey liquid carbon dioxide to the corresponding nozzle according to the first cleaning instruction so as to clean the lower surface of the wafer;
further, the wafer cleaning device is also provided with a heating component which is connected with a controller, and the controller controls the heating component to generate heat to heat the liquid carbon dioxide when the liquid carbon dioxide is used for cleaning the lower surface of the wafer.
Further, the controller controls a gas pipeline to intermittently deliver liquid carbon dioxide to the corresponding nozzle to clean the lower surface of the wafer.
Furthermore, a vacuum channel for accommodating the vacuum pipeline is arranged in the center of the mounting seat, six nozzles are uniformly arranged on the periphery of the vacuum channel, and jet ports of the nozzles point to the direction departing from the vacuum channel.
A wafer cleaning method using the wafer cleaning device comprises the following steps:
a1, placing a wafer on a positioner for positioning;
step A2, vacuumizing the vacuum generating assembly to enable vacuum to be formed between the positioner and the wafer;
step A3, the drive assembly drives the positioner to rotate, so as to drive the wafer to rotate;
step A4, the controller controls a gas transmission pipeline to transmit liquid carbon dioxide to the corresponding nozzle according to the first cleaning instruction so as to clean the lower surface of the wafer;
and step A5, the liquid carbon dioxide cleans the lower surface of the wafer and then turns into gaseous carbon dioxide which enters a recovery cavity, and the recovery cavity recovers the gaseous carbon dioxide.
Further, the wafer cleaning apparatus is further provided with a heating member connected to the controller, and in step A4, the controller controls the heating member to generate heat to heat the liquid carbon dioxide when cleaning the lower surface of the wafer with the liquid carbon dioxide.
Further, in step A4, the controller controls the gas transmission pipeline to intermittently transmit liquid carbon dioxide to the corresponding nozzle to clean the lower surface of the wafer.
Further, the cleaning agent comprises nitrogen and liquid carbon dioxide, and the step A4 is as follows: and the controller controls one gas transmission pipeline to transmit liquid carbon dioxide to the corresponding nozzle according to the second cleaning instruction, and simultaneously controls the other gas transmission pipeline to transmit nitrogen to the corresponding nozzle so as to simultaneously clean the lower surface of the wafer by using the nitrogen and the liquid carbon dioxide.
Further, the cleaning agent includes first cleaning agent and liquid second cleaning agent, and the second cleaning agent is different with first cleaning agent, and first cleaning agent is liquid carbon dioxide, and step A4 is: the controller controls one gas transmission pipeline to transmit the first cleaning agent to the corresponding nozzle according to the third cleaning instruction, and simultaneously controls the other gas transmission pipeline to transmit the second cleaning agent to the corresponding nozzle, so that the lower surface of the wafer is cleaned after the second cleaning agent is atomized.
Further, the second cleaning agent is one of a mixed solution of sulfuric acid and hydrogen peroxide, a mixed solution of ammonia water and hydrogen peroxide, hydrofluoric acid or ultrapure water.
The beneficial technical effects of the invention are as follows: for the device microstructure with high depth-width ratio under the nanometer size of the surface of the wafer, residues such as water molecules and the like can be easily removed, and carbon dioxide not only has an effective cleaning effect, but also has an effective drying effect and can be mixed with other cleaning agents for use.
Drawings
FIG. 1 is a schematic view of a wafer cleaning apparatus according to the present invention;
FIG. 2 is a schematic view of a wafer cleaning apparatus according to the present invention;
FIG. 3 is a schematic view of a wafer cleaning apparatus according to the present invention;
FIG. 4 is a schematic diagram of a cleaning assembly of a wafer cleaning apparatus according to the present invention;
FIG. 5 is a schematic diagram of a connection control structure of a wafer cleaning apparatus according to the present invention;
FIG. 6 is a schematic diagram of a carbon dioxide fluid removal high aspect ratio structure for a wafer cleaning apparatus and method in accordance with the present invention;
FIG. 7 is a schematic diagram of the effect of carbon dioxide fluid in removing moisture from high aspect ratio structures according to the present invention;
FIG. 8 is a diagram illustrating the effect of removing moisture from a high aspect ratio structure according to the prior art;
FIG. 9 is a schematic diagram of a wafer cleaning method according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments of the present invention may be combined with each other without conflict.
The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
Referring to fig. 1 to 5, a wafer cleaning apparatus for cleaning a lower surface of a wafer includes:
a positioner (1) for positioning the wafer,
the driving assembly (2) is used for driving the positioner to rotate;
the vacuum generating assembly (3) is arranged on the positioner and enables vacuum to be formed between the positioner and the wafer;
a cleaning assembly (4) positioned between the positioner and the wafer, the cleaning assembly (4) comprising:
a mounting seat (41) arranged on the positioner (1);
a plurality of nozzles (42) provided in the mounting seat (41), the nozzles (42) being arranged obliquely to the lower surface of the wafer;
each nozzle (42) is respectively connected with a gas transmission pipeline (43) for transmitting cleaning agent to the nozzle (42), wherein the cleaning agent comprises liquid carbon dioxide;
the recovery cavity (5) comprises a plurality of recovery rings and is used for recovering the cleaning agent after the wafer is cleaned;
the controller (6) is connected with the driving assembly (2) and is used for controlling the driving assembly (2) to drive and controlling a gas pipeline (43) to convey liquid carbon dioxide to the corresponding nozzle (42) according to a first cleaning instruction so as to clean the lower surface of the wafer;
furthermore, the wafer cleaning device is also provided with a heating component (7) which is connected with a controller (6), and the controller (6) controls the heating component (7) to generate heat to heat the liquid carbon dioxide when the liquid carbon dioxide is used for cleaning the lower surface of the wafer.
Further, the controller (6) controls a gas delivery pipe (43) to intermittently deliver liquid carbon dioxide to the corresponding nozzle (42) to clean the lower surface of the wafer.
Furthermore, a vacuum channel for accommodating the vacuum pipeline is arranged in the center of the mounting seat (41), six nozzles (42) are uniformly arranged around the vacuum channel, and the jet ports of the nozzles (42) point to the direction departing from the vacuum channel.
Referring to fig. 6, in particular, the carbon dioxide fluid can effectively remove the residue in the high aspect ratio structure, but it can also be used for cleaning the surface of the wafer, and the carbon dioxide has the dual functions of cleaning and drying.
Specifically, the use of carbon dioxide and nitrogen in combination can speed up the wafer cleaning process.
Specifically, a heating member (7) is provided to instantaneously contact the wafer with the outgoing liquid carbon dioxide.
Specifically, during the cleaning process, the positioner (1) is rotated to achieve a conjugate time difference with the CO2 fluid.
Specifically, the intermittent spraying of the CO2 fluid can achieve the effect that the CO2 can be changed into gas to be released into the recovery cavity for recovery in partial cleaning.
Fig. 8 shows a structure after a general cleaning process in the prior art is used for cleaning, and it is seen that in the prior art, moisture in a device is not easily cleaned, and the device structure is easily destroyed due to too large surface tension of water molecules.
Fig. 7 shows the structure after the carbon dioxide cleaning process is used in the present invention, which can effectively remove the residues such as moisture and the like from the high aspect ratio structure of the device, and the residues become gas after the CO2 cleaning process is performed to remove the residues.
Referring to fig. 9, the present invention further provides a wafer cleaning method using the aforementioned wafer cleaning apparatus, including the steps of:
a1, placing a wafer on a positioner (1) for positioning;
step A2, vacuumizing the vacuum generating assembly (3) to enable vacuum to be formed between the positioner and the wafer;
step A3, the drive component (2) drives the positioner to rotate, so as to drive the wafer to rotate;
step A4, the controller (6) controls a gas transmission pipeline (43) to transmit liquid carbon dioxide to the corresponding nozzle (42) according to the first cleaning instruction so as to clean the lower surface of the wafer;
and A5, the liquid carbon dioxide cleans the lower surface of the wafer and then turns into gaseous carbon dioxide to enter the recovery cavity (5), and the recovery cavity (5) recovers the gaseous carbon dioxide.
Furthermore, the wafer cleaning device is also provided with a heating component (7) which is connected with a controller (6), and in the step A4, the controller (6) controls the heating component (7) to generate heat to heat the liquid carbon dioxide when the liquid carbon dioxide is used for cleaning the lower surface of the wafer.
Further, in step A4, the controller (6) controls the gas transmission pipeline (43) to intermittently transmit liquid carbon dioxide to the corresponding nozzle (42) to clean the lower surface of the wafer.
Further, the cleaning agent comprises nitrogen and liquid carbon dioxide, and the step A4 is as follows: the controller (6) controls one gas transmission pipeline (43) to transmit liquid carbon dioxide to the corresponding nozzle (42) according to the second cleaning instruction, and controls the other gas transmission pipeline (43) to transmit nitrogen to the corresponding nozzle (42) so as to clean the lower surface of the wafer by using the nitrogen and the liquid carbon dioxide simultaneously.
Further, the cleaning agent includes first cleaning agent and liquid second cleaning agent, and the second cleaning agent is different with first cleaning agent, and first cleaning agent is liquid carbon dioxide, and step A4 is: the controller (6) controls one gas transmission pipeline (43) to transmit a first cleaning agent to the corresponding nozzle (42) according to the third cleaning instruction, and controls the other gas transmission pipeline (43) to transmit a second cleaning agent to the corresponding nozzle (42) at the same time, so that the lower surface of the wafer is cleaned after the second cleaning agent is atomized.
Further, the second cleaning agent is one of a mixed solution of sulfuric acid and hydrogen peroxide, a mixed solution of ammonia water and hydrogen peroxide, hydrofluoric acid or ultrapure water.
Specifically, the carbon dioxide fluid can effectively remove the residue in the high aspect ratio structure, and certainly, the carbon dioxide fluid can also be used for cleaning the surface of a common wafer, and the carbon dioxide fluid has the dual effects of cleaning and drying.
Specifically, the use of carbon dioxide and nitrogen in combination can speed up the wafer cleaning process.
Specifically, a heating member (7) is provided to instantaneously contact the wafer with the outgoing liquid carbon dioxide.
Specifically, during the cleaning process, the positioner (1) is rotated to achieve a conjugate time difference with the CO2 fluid.
Specifically, the intermittent CO2 fluid injection is adopted, so that the CO2 can be changed into gas to be released into the recovery cavity for recovery in partial cleaning.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims (9)
1. A wafer cleaning apparatus for cleaning a lower surface of a wafer, comprising:
a positioner (1) for positioning a wafer,
a drive assembly (2) for driving the positioner to rotate;
the vacuum generating assembly (3) is arranged on the positioner and enables vacuum to be formed between the positioner and the wafer;
a cleaning assembly (4) between the positioner and the wafer, the cleaning assembly (4) comprising:
a mounting seat (41) arranged on the positioner (1);
a plurality of nozzles (42) disposed within the mounting base (41), the nozzles (42) being arranged obliquely to a lower surface of the wafer;
each nozzle (42) is respectively connected with a gas transmission pipeline (43) for transmitting cleaning agent to the nozzle (42), wherein the cleaning agent comprises liquid carbon dioxide;
the recovery cavity (5) comprises a plurality of recovery rings and is used for recovering the cleaning agent after the wafer is cleaned;
the controller (6) is used for controlling the gas transmission pipeline (43) to transmit the liquid carbon dioxide to the corresponding nozzle (42) according to a first cleaning instruction so as to clean the lower surface of the wafer;
the controller (6) controls the gas transmission pipeline (43) to intermittently transmit the liquid carbon dioxide to the corresponding nozzle (42) so as to clean the lower surface of the wafer.
2. A wafer cleaning apparatus according to claim 1, further comprising a heating member (7) connected to the controller (6), wherein the controller (6) controls the heating member (7) to heat the liquid carbon dioxide when the liquid carbon dioxide is used to clean the lower surface of the wafer.
3. A wafer cleaning apparatus as claimed in claim 1, characterized in that a vacuum channel for accommodating a vacuum line is provided centrally in the mounting seat (41), six nozzles (42) are arranged uniformly around the vacuum channel, and the ejection openings of the nozzles (42) point away from the vacuum channel.
4. A wafer cleaning method using the wafer cleaning apparatus according to any one of claims 1 to 3, comprising the steps of:
a1, placing a wafer on a positioner (1) for positioning;
step A2, vacuumizing a vacuum generating assembly (3) to enable vacuum to be formed between the positioner and the wafer;
step A3, a driving component (2) drives the positioner to rotate, so that the wafer is driven to rotate;
step A4, the controller (6) controls the gas transmission pipeline (43) to transmit the liquid carbon dioxide to the corresponding nozzle (42) according to a first cleaning instruction so as to clean the lower surface of the wafer;
and A5, cleaning the lower surface of the wafer by the liquid carbon dioxide, then changing the cleaned lower surface into gaseous carbon dioxide, and enabling the gaseous carbon dioxide to enter the recovery cavity (5), wherein the gaseous carbon dioxide is recovered by the recovery cavity (5).
5. A wafer cleaning method according to claim 4, wherein the wafer cleaning apparatus is further provided with a heating member (7) connected to the controller (6), and in the step A4, the controller (6) controls the heating member (7) to generate heat to heat the liquid carbon dioxide when the liquid carbon dioxide is used to clean the lower surface of the wafer.
6. The wafer cleaning method as claimed in claim 4, wherein in the step A4, the controller (6) controls the gas transmission pipeline (43) to intermittently transmit the liquid carbon dioxide to the corresponding nozzle (42) to clean the lower surface of the wafer.
7. The wafer cleaning method according to claim 4, wherein the cleaning agent comprises nitrogen and liquid carbon dioxide, and the step A4 is: and the controller (6) controls one gas transmission pipeline (43) to transmit the liquid carbon dioxide to the corresponding nozzle (42) according to a second cleaning instruction, and controls the other gas transmission pipeline (43) to transmit nitrogen to the corresponding nozzle (42) so as to clean the lower surface of the wafer by using the nitrogen and the liquid carbon dioxide simultaneously.
8. The method as claimed in claim 4, wherein the cleaning agent comprises a first cleaning agent and a second cleaning agent in liquid state, the second cleaning agent is different from the first cleaning agent, the first cleaning agent is liquid carbon dioxide, and the step A4 is: controller (6) are according to third washing instruction control one gas transmission pipeline (43) are to corresponding nozzle (42) carry first cleaner, the while control another gas transmission pipeline (43) are to corresponding nozzle (42) carry the second cleaner, make after being atomized the second cleaner is right the lower surface of wafer washs.
9. The wafer cleaning method according to claim 8, wherein the second cleaning agent is one of a mixed solution of sulfuric acid and hydrogen peroxide, a mixed solution of ammonia water and hydrogen peroxide, hydrofluoric acid, and ultrapure water.
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| CN202011630195.XA CN112768376B (en) | 2020-12-30 | 2020-12-30 | Wafer cleaning device and wafer cleaning method |
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| CN202011630195.XA CN112768376B (en) | 2020-12-30 | 2020-12-30 | Wafer cleaning device and wafer cleaning method |
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| CN112768376A CN112768376A (en) | 2021-05-07 |
| CN112768376B true CN112768376B (en) | 2022-12-16 |
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| CN113319044B (en) * | 2021-06-11 | 2022-10-25 | 湖南国创同芯科技有限公司 | Impact type wafer cleaning machine |
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| CN1481580A (en) * | 2000-12-15 | 2004-03-10 | K��C���Ƽ���ʽ���� | Appts for cleaning edges of wafers |
| CN108022861A (en) * | 2016-11-04 | 2018-05-11 | 东京毅力科创株式会社 | Substrate board treatment, substrate processing method using same and storage medium |
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| JP2009081224A (en) * | 2007-09-26 | 2009-04-16 | Rasuko:Kk | Sheet type washing device |
| JP5984424B2 (en) * | 2012-02-27 | 2016-09-06 | 国立大学法人京都大学 | Substrate cleaning method, substrate cleaning apparatus, and vacuum processing apparatus |
| CN103506339B (en) * | 2012-06-28 | 2017-04-19 | 盛美半导体设备（上海）有限公司 | Device and method for cleaning reverse side of wafer |
| JP6048043B2 (en) * | 2012-09-28 | 2016-12-21 | 東京エレクトロン株式会社 | Substrate cleaning method, substrate cleaning apparatus, and vacuum processing system |
| KR101533931B1 (en) * | 2014-07-07 | 2015-07-03 | 주식회사 아이엠티 | Method and apparatus for cleaning of three dimensional wafer surface |
| US20160322239A1 (en) * | 2015-04-28 | 2016-11-03 | Applied Materials, Inc. | Methods and Apparatus for Cleaning a Substrate |
| CN106252260A (en) * | 2016-08-08 | 2016-12-21 | 北京七星华创电子股份有限公司 | Wafer cleaning device and cleaning method |
| CN109755160A (en) * | 2019-01-11 | 2019-05-14 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | wafer cleaning mechanism |
| CN111112186B (en) * | 2019-12-27 | 2022-08-09 | 上海至纯洁净系统科技股份有限公司 | Wafer cleaning equipment |
| CN111001606B (en) * | 2019-12-27 | 2022-03-11 | 上海至纯洁净系统科技股份有限公司 | Semiconductor cleaning equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1481580A (en) * | 2000-12-15 | 2004-03-10 | K��C���Ƽ���ʽ���� | Appts for cleaning edges of wafers |
| CN108022861A (en) * | 2016-11-04 | 2018-05-11 | 东京毅力科创株式会社 | Substrate board treatment, substrate processing method using same and storage medium |
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