CN112763881A - Avalanche test parameter selection method and device, computer equipment and storage medium - Google Patents

Avalanche test parameter selection method and device, computer equipment and storage medium Download PDF

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CN112763881A
CN112763881A CN202011548035.0A CN202011548035A CN112763881A CN 112763881 A CN112763881 A CN 112763881A CN 202011548035 A CN202011548035 A CN 202011548035A CN 112763881 A CN112763881 A CN 112763881A
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avalanche
junction temperature
average
value
power
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CN112763881B (en
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明志茂
江雪晨
陆裕东
李汝冠
岳龙
赵可沦
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Grg Metrology & Test Hunan Co ltd
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Grg Metrology & Test Hunan Co ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G01R31/2623—Circuits therefor for testing field effect transistors, i.e. FET's for measuring break-down voltage therefor

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  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

The application relates to an avalanche test parameter selection method, an avalanche test parameter selection device, computer equipment and a storage medium, which can acquire a test environment parameter and a related set parameter of a repeated avalanche tolerance circuit for analysis when a device to be tested is subjected to repeated avalanche tolerance test, so as to obtain a junction temperature parameter of the device to be tested under the current set parameter. And then comparing and analyzing the junction temperature parameter with a preset junction temperature threshold value, and finally judging whether the set parameter is reasonable or not according to the comparison and analysis result, namely outputting corresponding reasonable information of the set parameter or adjusting prompt information of the set parameter according to the comparison and analysis result. Through the scheme, the user can be guided to set the avalanche tolerance parameters in the repeated avalanche tolerance test operation, so that the set parameters selected by the user can meet the repeated avalanche tolerance test requirements of the device to be tested, and the accuracy of repeated avalanche tolerance test results can be further ensured.

Description

Avalanche test parameter selection method and device, computer equipment and storage medium
Technical Field
The present application relates to the field of reliability testing technologies, and in particular, to a method and an apparatus for selecting avalanche testing parameters, a computer device, and a storage medium.
Background
With the development of the third generation semiconductor technology, silicon carbide MOSFET devices and diodes are increasingly used in special environments such as high frequency switches and automotive electronics due to their advantages of high frequency, low power consumption, higher power density, lower system cost, and the like. These devices, when driving Inductive loads, can suffer from energy spikes from Undamped Inductive Switching (UIS). The switching process under non-clamped inductive load is generally considered to be the most extreme stress situation that MOSFET devices and diode devices can be subjected to in system applications, because the energy stored in the inductor must be fully discharged by the device under test at the moment of turn-off when the loop is turned on, while the high voltage and current applied to the device under test are highly likely to cause device failure, the damage from which is often irreparable. Therefore, avalanche tolerance is often an important measure of reliability of silicon carbide dut.
The avalanche tolerance test is to simulate the process of avalanche generation when the device is shut down in practical application according to the conditions of set voltage, current and inductance, and to see whether the device to be tested is damaged or not, and the device which cannot bear the specified energy is a unqualified product. The avalanche tolerance test comprises a single pulse avalanche tolerance test and a repeated pulse avalanche tolerance test, the measurement conditions of the single pulse avalanche tolerance test equipment comprise an inductor, a single avalanche current value and a power supply voltage in an avalanche process, and compared with the single pulse test, the measurement conditions of the repeated pulse further comprise parameters such as junction temperature, avalanche pulse width and frequency.
Although the specification of silicon carbide MOSFETs lists the value of the repetitive avalanche current and the repetitive avalanche energy, with the measurement conditions noted, only the initial temperature of 25 c, the maximum junction temperature of 150 c or 175 c, and the inductance value are typical. For completely evaluating the repeated avalanche capability of the device to be tested, the related parameters further comprise steady-state thermal resistance (junction-shell thermal resistance or junction-ring thermal resistance), working pulse duty ratio, working frequency, avalanche pulse duty ratio (or avalanche pulse width directly given), power supply voltage, transient thermal resistance curve and resistive load value, and the test parameters are different in selection and have great influence on repeated avalanche tolerance test results. In the actual repeated avalanche tolerance test process, the accuracy of the repeated avalanche tolerance test result is often seriously influenced due to unreasonable parameter selection, and the traditional repeated avalanche tolerance test operation has the defect of poor test reliability.
Disclosure of Invention
Therefore, it is necessary to provide an avalanche test parameter selection method, an apparatus, a computer device, and a storage medium for solving the problem of poor reliability of the conventional repetitive avalanche tolerance test operation.
An avalanche test parameter selection method comprises the following steps: acquiring a test environment parameter and a setting parameter of a repeated avalanche tolerance test circuit; obtaining junction temperature parameters of the device to be tested under the current set parameters according to the test environment parameters and the set parameters, and comparing and analyzing the junction temperature parameters with a preset junction temperature threshold; and outputting reasonable information of the set parameters or prompt information for adjusting the set parameters according to the comparison and analysis result.
An avalanche test parameter selection apparatus, comprising: the setting parameter acquisition module is used for acquiring the testing environment parameters and the setting parameters of the repeated avalanche tolerance testing circuit; the junction temperature parameter analysis module is used for obtaining junction temperature parameters of the device to be tested under the current set parameters according to the test environment parameters and the set parameters, and comparing and analyzing the junction temperature parameters with a preset junction temperature threshold value; and the selection result prompting module is used for outputting reasonable parameter setting information or prompting information for adjusting the parameter setting according to the comparison and analysis result.
A computer device comprising a memory storing a computer program and a processor implementing the steps of the above method when executing the computer program.
A computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, carries out the steps of the above-mentioned method.
The avalanche test parameter selection method, the device, the computer equipment and the storage medium can acquire the test parameters and the related set parameters of the repeated avalanche tolerance circuit for analysis when the repeated avalanche tolerance test is carried out on the device to be tested, so as to obtain the junction temperature parameter of the device to be tested under the current set parameters. And then comparing and analyzing the junction temperature parameter with a preset junction temperature threshold value, and finally judging whether the set parameter is reasonable or not according to the comparison and analysis result, namely outputting corresponding reasonable information of the set parameter or adjusting prompt information of the set parameter according to the comparison and analysis result. Through the scheme, the user can be guided to set the avalanche tolerance parameters in the repeated avalanche tolerance test operation, so that the set parameters selected by the user can meet the repeated avalanche tolerance test requirements of the device to be tested, and the accuracy of repeated avalanche tolerance test results can be further ensured.
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In order to more clearly illustrate the technical solutions in the embodiments or the conventional technologies of the present application, the drawings used in the descriptions of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the following descriptions are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic flow chart illustrating an embodiment of a method for selecting avalanche testing parameters;
FIG. 2 is a schematic diagram of a repetitive avalanche tolerance test circuit in one embodiment;
FIG. 3 is a schematic flow chart of an avalanche test parameter selection method in another embodiment;
FIG. 4 is a schematic flow chart illustrating a method for selecting avalanche testing parameters in another embodiment;
FIG. 5 is a schematic diagram of a junction temperature peak analysis process according to an embodiment;
FIG. 6 is a schematic diagram of a repetitive avalanche waveform in one embodiment;
FIG. 7 is a schematic view of another embodiment of a junction temperature peak analysis process;
FIG. 8 is a schematic diagram of a repetitive avalanche waveform in another embodiment;
FIG. 9 is a schematic diagram of an embodiment of an avalanche test parameter selection apparatus;
FIG. 10 is a diagram illustrating an internal structure of a computer device according to an embodiment.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are illustrated in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Referring to fig. 1, a method for selecting avalanche testing parameters includes steps S100, S200, and S300.
And step S100, acquiring testing environment parameters and setting parameters of the repeated avalanche tolerance testing circuit.
Specifically, when a user has a need to perform a repeated avalanche tolerance test, the user first inputs a setting parameter related to the repeated avalanche tolerance test circuit to a control device or a processor that executes the method for selecting avalanche test parameters in this embodiment, and simultaneously acquires a test environment parameter through a corresponding acquisition device. The repeated avalanche tolerance test is a scheme for simulating the energy peak of the non-clamped inductive switch borne by the device to be tested and detecting and verifying the operation reliability of the device to be tested under the extreme stress condition.
The type of the repeated avalanche tolerance test circuit is not unique, and the repeated avalanche tolerance test circuit can be used for testing the device to be tested as long as the repeated avalanche tolerance test circuit can generate a high voltage to break down the device to be tested so as to simulate the extreme operating environment of the device to be tested. For example, in one embodiment, a schematic diagram of the repetitive avalanche tolerance test circuit is shown in fig. 2, a control terminal of the device under test DUT is used for inputting a pulse signal VGS for controlling on/off of the device under test DUT, a first terminal of the device under test DUT is connected to one terminal of an adjustable inductor L, the other terminal of the adjustable inductor L is connected to one terminal of an adjustable load RL, the other terminal of the adjustable load RL is connected to one terminal of a capacitor C and a power supply VDD, and the other terminal of the capacitor C is connected to the power supply VDD and a second terminal of the device under test DUT. When the pulse signal VGS input into the device to be tested DUT controls the device to be tested DUT to be disconnected, because the current on the adjustable inductor L can not suddenly change, induced electromotive force can be generated on the adjustable inductor L, and the device to be tested DUT can be broken down after the induced electromotive force is applied to the device to be tested DUT.
It should be noted that the type of the setting parameter is not exclusive, and in one embodiment, the setting parameter includes at least one of a power supply voltage value, an inductance value (i.e., an inductance of the adjustable inductor), a load resistance value (i.e., a resistance of the adjustable load), a duty cycle of a working pulse (i.e., a pulse signal input to the device under test), an operating frequency, a turn-on resistance value of the device under test, and a breakdown voltage value of the device under test of the repetitive avalanche tolerance test circuit. In a more detailed embodiment, the setting parameters include a power supply voltage value, an inductance value, a load resistance value, a duty ratio of a working pulse, a working frequency, a conduction resistance value of the device to be tested, and a breakdown voltage value of the device to be tested of the repeated avalanche tolerance test circuit.
And S200, obtaining junction temperature parameters of the device to be tested under the current set parameters according to the test environment parameters and the set parameters, and comparing and analyzing the junction temperature parameters with a preset junction temperature threshold value.
In particular, the key point for repeating the avalanche tolerance test is how to ensure that the junction temperature parameter is within a specified range during successive avalanches. Therefore, in this embodiment, after the setting parameters and the testing environment parameters are obtained, analysis and calculation are performed according to the current setting parameters and the testing environment parameters to obtain junction temperature parameters that can be reached by the device to be tested under the current setting parameters, and then the junction temperature parameters are compared with the preset junction temperature threshold value for analysis, so as to determine whether the junction temperature that can be reached under the current setting parameters will exceed the preset junction temperature threshold value.
It should be noted that the type of the device under test is not exclusive and may be a power device such as a triode or a metal-oxide-semiconductor field effect transistor, and further, in an embodiment, the device under test may specifically be a silicon carbide metal-oxide-semiconductor field effect transistor (SiC MOSFET).
And step S300, outputting reasonable information of the setting parameters or prompt information for adjusting the setting parameters according to the comparison and analysis result.
Specifically, the setting of the parameter is reasonable, that is, the junction temperature parameter does not exceed the preset junction temperature threshold, and the information for adjusting the setting of the parameter needs to be output, that is, the junction temperature parameter exceeds the allowed preset junction temperature threshold at this time. After the comparison and analysis are carried out according to the junction temperature parameter and the preset junction temperature threshold, according to different comparison and analysis results, the information whether the corresponding set parameter is reasonable or not is used for guiding a user to adjust the set parameter under the condition that the set parameter is unreasonable, so that the parameter finally used for repeating the avalanche tolerance test meets the test requirement, the temperature parameter in the test process is always within the preset junction temperature threshold, and the accuracy of the avalanche test result is ensured.
In one embodiment, after step S300, the method further includes: and when receiving the test starting information, controlling the pulse generating device to send continuous pulses to the device to be tested so as to control the device to be tested to be switched on or off.
Specifically, after the analysis of whether the set parameters meet the test requirements or not is performed by combining the test environment parameters acquired and sent by other acquisition devices and the set parameters input by a user, when the test starting information is received, the pulse generation device is controlled to generate continuous pulses to repeatedly control the on or off of the device to be tested, and under the condition that the device to be tested is disconnected, the repeated avalanche tolerance test circuit generates induced electromotive force to be applied to the device to be tested, so that the device to be tested is broken down, and the repeated avalanche tolerance test is completed.
It should be noted that the specific case of receiving the start test information is not exclusive. In one embodiment, when the analysis results in reasonable test parameters, i.e. default to receiving the start test information, the repeated avalanche pulse test is directly started. In another embodiment, the information that the setting parameter is reasonable may be output when the setting parameter meets the test requirement, in which case the user may send a confirmation instruction or an open instruction, and when receiving the confirmation instruction or the open instruction, the user may receive the test starting information. In another embodiment, after outputting the prompt message for adjusting the setting parameter, the user may still send a confirmation command or a start command to the control device 100, which also indicates that the control device 100 receives the test start message.
It can be understood that, in an embodiment, if the user adjusts the setting parameters after receiving the prompt message for adjusting the setting parameters, the user may re-analyze and judge whether the setting parameters are reasonable according to the adjusted setting parameters, by re-combining the adjusted setting parameters and the testing environment parameters, until the user sends a confirmation instruction to the control device or adjusts the setting parameters to meet the testing requirements
Referring to fig. 3, in one embodiment, the junction temperature parameter includes a peak junction temperature, and step S300 includes step S310 and step S320.
Step S310, when the peak junction temperature is smaller than a preset junction temperature threshold value, outputting information with reasonable set parameters; and step S320, outputting prompt information for adjusting the set parameters when the peak junction temperature is greater than or equal to the preset junction temperature threshold.
Specifically, the peak junction temperature is the maximum value that the junction temperature of the device under test can reach. In this embodiment, after the peak junction temperature is obtained through calculation, the peak junction temperature is compared with a preset junction temperature threshold value for analysis, and whether the peak junction temperature is smaller than the preset junction temperature threshold value is determined. If yes, the peak junction temperature is within the allowed junction temperature threshold, and under the current set parameters, the junction temperature of the device to be tested does not exceed the preset junction temperature threshold, so that the set parameters are reasonable, the requirement of repeated avalanche tolerance test can be met, and the result of the repeated avalanche tolerance test is not inaccurate. If not, the peak junction temperature which can be reached by the device to be measured is over-large, and if the set parameter is used for carrying out repeated avalanche tolerance test, the junction temperature of the device to be measured exceeds the preset junction temperature possibly, so that the measurement result is inaccurate. Therefore, when the peak junction temperature is greater than or equal to the preset junction temperature threshold, prompt information for adjusting the setting parameter is output to inform a user, so that the user can select whether to adjust the setting parameter according to actual requirements, for example, adjust a power supply voltage value or an inductance value in the setting parameter.
It should be noted that, in an embodiment, the junction temperature parameter further includes an average junction temperature, and the comparing and analyzing the junction temperature parameter with the preset junction temperature threshold correspondingly includes comparing and analyzing the average junction temperature with the preset junction temperature threshold corresponding to the average junction temperature, and comparing and analyzing the peak junction temperature with the preset junction temperature threshold corresponding to the peak junction temperature. When the average junction temperature and the peak junction temperature are both smaller than the corresponding preset junction temperature threshold, the parameter setting is reasonable at the moment, the information that the set parameter is reasonable is output, otherwise, the set parameter side is unreasonable, and prompt information for adjusting the set parameter is output.
Referring to fig. 4, in an embodiment, the junction temperature parameter includes a peak junction temperature, and the step of obtaining the junction temperature parameter of the device to be tested under the current setting parameter according to the setting parameter includes step S210 and step S220.
Step S210, when the load resistance value of the repeated avalanche tolerance test circuit is not zero, analyzing according to the test environment parameters and the power supply voltage value, the inductance value, the load resistance value, the working pulse duty ratio, the working frequency, the conduction resistance value of the device to be tested and the breakdown voltage value of the device to be tested to obtain the peak junction temperature of the device to be tested; and step S220, when the load resistance value of the repeated avalanche tolerance test circuit is zero, analyzing according to the test environment parameters, the power supply voltage value, the inductance value, the working pulse duty ratio, the working frequency and the breakdown voltage value of the device to be tested of the repeated avalanche tolerance test circuit to obtain the peak junction temperature of the device to be tested.
Specifically, when the repeated avalanche tolerance test is performed, the resistance value of the load resistor can be adjusted, so that the analysis modes of the corresponding peak junction temperature are inconsistent according to whether the resistance value of the load resistor is zero or not. In this embodiment, two repeated avalanche pulse test implementation schemes, that is, a load resistance value is zero and a load resistance value is not zero, are provided, when the load resistance is not zero, the load resistance value, a power supply voltage value, an inductance value, a working pulse duty ratio, a working frequency, a conduction resistance value of a device to be tested, and a breakdown voltage value of the device to be tested of the repeated avalanche tolerance test circuit need to be combined for analysis, so as to obtain a corresponding peak junction temperature, and when the load resistance value is zero, the power supply voltage value, the inductance value, the working pulse duty ratio, the working frequency, and the breakdown voltage value of the device to be tested of the repeated avalanche tolerance test circuit only need to be combined for analysis, so as to obtain a final peak junction temperature.
It can be understood that, when the resistance value of the load resistor is not zero, the specific manner of performing the peak junction temperature analysis is not unique, and in an embodiment, please refer to fig. 5, the step of obtaining the peak junction temperature of the device to be tested by analyzing according to the test environment parameters and the power supply voltage value, the inductance value, the load resistance value, the duty cycle of the working pulse, the working frequency, the on-resistance value of the device to be tested, and the breakdown voltage value of the device to be tested includes steps S211 to S219.
Step S211, analyzing according to the power supply voltage value, the load resistance value and the on-resistance value of the device to be tested of the repeated avalanche tolerance test circuit to obtain an avalanche current value; step S212, analyzing according to the avalanche current value, the load resistance value, the power supply voltage, the inductance value of the repeated avalanche tolerance test circuit and the breakdown voltage value of the device to be tested to obtain an avalanche pulse width; step S213, analyzing according to the avalanche current value, the avalanche pulse width and the breakdown voltage value of the device to be tested to obtain a repeated avalanche energy value; step S214, analyzing according to the repeated avalanche energy value and the avalanche pulse width to obtain avalanche power; step S215, analyzing according to the repeated avalanche energy value and the working frequency of the repeated avalanche tolerance test circuit to obtain average avalanche power; step S216, analyzing according to the duty ratio of the working pulse of the repeated avalanche tolerance test circuit, the avalanche current value and the conduction resistance value of the device to be tested to obtain average conduction power; step S217, analyzing according to the average avalanche power, the average conduction power and the test environment parameters to obtain average junction temperature; step S218, analyzing according to the avalanche power and the test environment parameters to obtain junction temperature variation; and step S219, obtaining a junction temperature peak value according to the average junction temperature and the junction temperature variation.
Specifically, please refer to fig. 6 in combination with a schematic diagram of the repetitive avalanche tolerance test circuit shown in fig. 2, where VGS is a pulse signal, IAR is an avalanche current, and VDS is a sampled voltage signal between the adjustable inductor L and one end of the DUT in fig. 2. Defining a boundary condition (t ═ 0, i ═ IL ═ IAR), where t ═ 0 is the first pulse end time of the avalanche current value IAR shown in fig. 6, and deducing the relationship between the current and the relevant parameters in the process of obtaining the repeated avalanche tolerance test as follows:
Figure BDA0002856205580000091
wherein I (t) represents the current at time t, t represents time, IARRepresents the avalanche current value, RLRepresenting the load resistance value, L representing the inductance value, VDDRepresenting the value of the supply voltage, VAVRepresenting the avalanche voltage. Normally, of avalanche voltage
Figure BDA0002856205580000092
That is, the avalanche voltage is usually about 1.3 times of the breakdown voltage BVDSS, and in the actual evaluation process, the magnitude of the breakdown voltage BVDSS can be 1.3 times to 1.5 times. In another embodiment, to ensure accuracy of the assessment, VAVCan also be measured by a single avalanche.
Known avalanche pulse width (t)av) At the moment, the current drops to 0, and the avalanche pulse width t can be deducedavExpression:
Figure BDA0002856205580000101
wherein, tavDenotes the pulse width, IARRepresents the avalanche current value, RLRepresenting the load resistance value, L representing the inductance value, VDDRepresenting the value of the supply voltage, VAVRepresenting the avalanche voltage. In the conventional avalanche tolerance test, the avalanche pulse width cannot be set, and if the repeated avalanche tolerance test needs to be performed, the corresponding avalanche pulse width needs to be set, so the scheme of the embodiment provides the avalanche pulse width tavThe relation with other parameters makes it possible to set the parameter.
It should be noted that the avalanche current value IARThe calculation mode of (3) is not unique, and in this embodiment, because the resistance value of the load resistor is not zero, the power supply voltage value, the load resistance value and the on-resistance value of the device to be tested of the repeated avalanche tolerance test circuit can be combined to perform analysis to obtain the avalanche current value. Further, in a more detailed embodiment, the avalanche current value IARThe analysis method of (1) is as follows:
Figure BDA0002856205580000102
wherein, IARRepresents the avalanche current value, RLRepresents a load resistance value, VDDRepresenting the value of the supply voltage, RDS(on) And representing the on resistance value of the device to be tested.
Further, after the avalanche current value and the avalanche pulse width are obtained through analysis and calculation, the avalanche current value, the avalanche pulse width and the avalanche voltage (for convenience of understanding of various embodiments of the present application, the magnitude of the breakdown voltage BVDSS with the avalanche voltage equal to 1.3 times) can be further combined for analysis and calculation, and a repeated avalanche energy value is obtained. In a more detailed embodiment, the repeat avalanche energy value is calculated as follows:
Figure BDA0002856205580000103
wherein E isARRepresenting the magnitude of the repetitive avalanche energy, IARRepresents the avalanche current value, tavDenotes the pulse width, VAVRepresents the avalanche voltage and represents the multiplication.
After obtaining the avalanche energy value, the avalanche power and the average avalanche power are further analyzed and calculated in combination with the avalanche energy value, and in a more detailed embodiment, the avalanche power and the average avalanche power are calculated as follows:
Figure BDA0002856205580000111
Pave＝EAR*f
wherein, PAVRepresenting the avalanche power, PaveRepresents the average avalanche power, EARRepresenting the repeat avalanche energy value, tavDenotes the pulse width, f denotes the operating frequency of the repetitive avalanche tolerance test circuit, and x denotes the multiplication.
In one embodiment, the duty cycle of the working pulse of the repeated avalanche tolerance test circuit, the avalanche current value and the on-resistance value of the device to be tested can be further analyzed, and the average on-power is calculated as follows:
Pcond＝IL 2*RDS(on)*D
wherein, PcondDenotes the average on-power, ILRepresenting the value of the current through the adjustable inductor, its magnitude and the value of the avalanche current IARAnd D represents the duty ratio of the working pulse of the repeated avalanche tolerance test circuit, namely the duty ratio of the pulse signal input to the control end of the device to be tested.
When the repeated avalanche tolerance test is carried out and a pulse signal is repeatedly input to the control end of the device to be tested for on-off control, the junction temperature of the device to be tested is increased by an average value, and the average value is based on average power consumption and is accompanied with the peak temperature of each pulse. Therefore, in this embodiment, the average avalanche power, the average conduction power, and the test environment parameter are combined to perform analysis and calculation, after the corresponding average junction temperature is obtained, the avalanche power and the test environment parameter are combined to perform analysis and calculation, so as to obtain a junction temperature variation, and finally, the corresponding peak junction temperature can be obtained through analysis and calculation according to the average junction temperature and the junction temperature variation. In a more detailed embodiment, the peak junction temperature is calculated as follows:
TMAX＝Tj-ave+ΔT
wherein, TMAXRepresenting the peak junction temperature, Tj-aveRepresenting the average junction temperature and deltat representing the amount of change in junction temperature.
It should be noted that in the actual analysis operation, the parameters of the test environment may be measured by other devices, and finally sent to the control device or the processor that executes the avalanche test parameter selection method in the present application, and finally analyzed and calculated, so that the corresponding high peak junction temperature may be obtained. The specific type of the testing environment parameter is not unique, and in one embodiment, the testing environment parameter includes a steady-state thermal resistance, a transient thermal resistance of the device to be tested, an environment temperature of an environment where the device to be tested is located, or a case temperature of the device to be tested.
It is to be understood that the manner of performing the peak junction temperature analysis calculation in combination with the test environment parameters is not exclusive, and in one embodiment, the test environment parameters include an ambient temperature, a steady-state junction loop thermal resistance value and a transient junction loop thermal resistance value of the device under test, and the step S217 includes: analyzing according to the average avalanche power, the average conduction power, the ambient temperature and the thermal resistance value of the steady-state junction ring to obtain the average junction temperature; the corresponding step S218 includes: and analyzing according to the avalanche power and the thermal resistance value of the transient junction ring to obtain junction temperature variation.
Specifically, in this embodiment, the ambient temperature is used to calculate the average junction temperature, the steady-state thermal resistance of the corresponding device to be measured is the steady-state junction-loop thermal resistance, and the transient thermal resistance is the transient junction-loop thermal resistance. The specific calculation of the average junction temperature is as follows:
Tj-ave＝(Pave+Pcond)Rja+Ta
wherein, Tj-aveRepresenting the average junction temperature, RjaRepresents the steady-state junction loop thermal resistance value, PaveRepresents the average avalanche power, PcondDenotes the average on-power, TaRepresenting the ambient temperature. Steady state loop thermal resistance value RjaAnd the ambient temperature TaThe avalanche test parameter can be measured by other devices and then sent to a control device or a processor for executing the avalanche test parameter selection method in the application.
Further, the variation of the junction temperature is calculated as follows: Δ T ═ PAVZjaWherein Δ T represents a change amount of the thermostat temperature, PAVRepresenting the avalanche power, ZjaRepresenting the transient junction loop thermal resistance value. ZjaIs tavThe transient junction loop thermal resistance value under the pulse width can be specifically measured by measuring equipment, then a transient thermal resistance curve is deduced, and the transient junction loop thermal resistance value under the pulse width is measured according to tavAnd selecting the corresponding transient junction loop thermal resistance value.
In another embodiment, the testing environment parameters include an average case temperature, a steady-state case thermal resistance value and a transient-state case thermal resistance value of the dut, and the step S217 includes: analyzing according to the average avalanche power, the average conduction power, the average shell temperature and the steady-state crusting thermal resistance value to obtain average junction temperature; step S218 includes: and analyzing according to the avalanche power and the transient crusting thermal resistance value to obtain junction temperature variation.
Specifically, in this embodiment, the temperature of the casing of the device to be measured (i.e., the average casing temperature) is used to calculate the average junction temperature, the steady-state thermal resistance of the corresponding device to be measured is the steady-state junction-to-shell thermal resistance, and the transient thermal resistance is the transient junction-to-shell thermal resistance. The specific calculation of the average junction temperature is as follows:
Tj-ave＝(Pave+Pcond)Rjc+Tc
wherein, Tj-aveRepresenting the average junction temperature, RjcRepresents the steady-state incrustation thermal resistance value, PaveRepresents the average avalanche power, PcondDenotes the average on-power, TcThe average shell temperature is indicated. Steady state crusting thermal resistance value RjcAnd the average shell temperature TcThe avalanche test parameter can be measured by other devices and then sent to a control device or a processor for executing the avalanche test parameter selection method in the application.
Further, the variation of the junction temperature is calculated as follows: Δ T ═ PAVZjcWherein Δ T represents a change amount of the thermostat temperature, PAVRepresenting the avalanche power, ZjcRepresenting the transient crusting thermal resistance. ZjcIs tavThe transient crusting thermal resistance value under the pulse width can be measured by a measuring device, and then a transient thermal resistance curve is deduced according to tavAnd selecting the corresponding transient crusting thermal resistance value.
Referring to fig. 7, in an embodiment, the step of obtaining the peak junction temperature of the device to be tested according to the test environment parameter and the power supply voltage value, the inductance value, the load resistance value, the duty ratio of the working pulse, the working frequency, the on-resistance value of the device to be tested, and the breakdown voltage value of the device to be tested of the repeated avalanche tolerance test circuit includes steps S221 to S228.
Step S221, analyzing according to the power supply voltage value, the inductance value, the working pulse duty ratio and the working frequency of the repeated avalanche tolerance test circuit to obtain an avalanche current value; step S222, analyzing according to the avalanche current value, the inductance value, the power supply voltage and the breakdown voltage value of the device to be tested to obtain the avalanche pulse width; step S223, analyzing according to the avalanche current value, the inductance value, the power supply voltage and the breakdown voltage value of the device to be tested to obtain a repeated avalanche energy value; step S224, analyzing according to the repeated avalanche energy value and the avalanche pulse width to obtain avalanche power; step S225, analyzing according to the repeated avalanche energy value and the working frequency to obtain average avalanche power; step S226, analyzing according to the average avalanche power and the test environment parameters to obtain average junction temperature; step S227, analyzing according to the avalanche power and the test environment parameters to obtain junction temperature variation; and step S228, obtaining a junction temperature peak value according to the average junction temperature and the junction temperature variation.
Specifically, please refer to fig. 8, wherein VGS is a pulse signal, IAR is an avalanche current, and VDS is a sampled voltage signal between the adjustable inductor L and one end of the DUT in fig. 2. Known avalanche pulse width (t)av) At the moment, the current drops to 0, deducing the avalanche pulse width tavThe expression is as follows:
Figure BDA0002856205580000141
wherein, tavRepresenting avalanche pulse width, IARIndicating avalanche current value, L indicating inductance value, VDDRepresenting the value of the supply voltage, VAVRepresenting the avalanche voltage. Normally, of avalanche voltage
Figure BDA0002856205580000143
That is, the avalanche voltage is usually about 1.3 times of the breakdown voltage BVDSS, and in the actual evaluation process, the magnitude of the breakdown voltage BVDSS can be 1.3 times to 1.5 times. In another embodiment, to ensure accuracy of the assessment, VAVCan also be measured by a single avalanche. In the conventional avalanche tolerance test, the avalanche pulse width cannot be set, and if the repeated avalanche tolerance test needs to be performed, the corresponding avalanche pulse width needs to be set, so the scheme of the embodiment provides the avalanche pulse width tavThe relation with other parameters makes it possible to set the parameter.
It should be noted that the avalanche current value IARThe calculation method of (2) is not unique, and in this embodiment, since the resistance value of the load resistor is zero, the power supply voltage value, the inductance value, the duty ratio of the working pulse and the working frequency of the repeated avalanche tolerance test circuit can be combined to perform analysis and calculation to obtain the corresponding avalanche current value. In a more detailed embodiment, the avalanche current value can be analytically calculated by:
Figure BDA0002856205580000142
wherein, IARIndicating avalanche current value, L indicating inductance value, VDDThe method comprises the steps of representing a power supply voltage value, representing the duty ratio of working pulses of a repeated avalanche tolerance test circuit, namely the duty ratio of pulse signals input to a control end of a device to be tested, representing the working frequency of the repeated avalanche tolerance test circuit, and multiplying.
Further, after the avalanche current value and the avalanche pulse width are obtained through analysis and calculation, the avalanche current value, the inductance value, the power supply voltage and the avalanche voltage (for convenience of understanding of various embodiments of the present application, the magnitude of the breakdown voltage BVDSS with the avalanche voltage equal to 1.3 times) can be further combined for analysis and calculation, and a repeated avalanche energy value is obtained. In a more detailed embodiment, the repeat avalanche energy value is calculated as follows:
Figure BDA0002856205580000151
wherein E isARRepresenting the magnitude of the repetitive avalanche energy, IARRepresents the avalanche current value, tavDenotes the pulse width, VAVRepresents the avalanche voltage and represents the multiplication.
After obtaining the avalanche energy value, the avalanche power and the average avalanche power are further analyzed and calculated in combination with the avalanche energy value, and in a more detailed embodiment, the avalanche power and the average avalanche power are calculated as follows:
Figure BDA0002856205580000152
Pave＝EAR*f
wherein, PAVRepresenting the avalanche power, PaveRepresents the average avalanche power, EARRepresenting the repeat avalanche energy value, tavDenotes the pulse width, f denotes the operating frequency of the repetitive avalanche tolerance test circuit, and x denotes the multiplication.
When the repeated avalanche tolerance test is carried out and a pulse signal is repeatedly input to the control end of the device to be tested for on-off control, the junction temperature of the device to be tested is increased by an average value, and the average value is based on average power consumption and is accompanied with the peak temperature of each pulse. Therefore, in this embodiment, the average avalanche power, the average conduction power, and the test environment parameter are combined to perform analysis and calculation, after the corresponding average junction temperature is obtained, the avalanche power and the test environment parameter are combined to perform analysis and calculation, so as to obtain a junction temperature variation, and finally, the corresponding peak junction temperature can be obtained through analysis and calculation according to the average junction temperature and the junction temperature variation. In a more detailed embodiment, the peak junction temperature is calculated as follows:
TMAX＝Tj-ave+ΔT
wherein, TMAXRepresenting the peak junction temperature, Tj-aveRepresenting the average junction temperature and deltat representing the amount of change in junction temperature.
It should be noted that in the actual analysis operation, the parameters of the test environment may be measured by other devices, and finally sent to the control device or the processor that executes the avalanche test parameter selection method in the present application, and finally analyzed and calculated, so that the corresponding high peak junction temperature may be obtained. The specific type of the testing environment parameter is not unique, and in one embodiment, the testing environment parameter includes a steady-state thermal resistance, a transient thermal resistance of the device to be tested, an environment temperature of an environment where the device to be tested is located, or a case temperature of the device to be tested.
In one embodiment, the testing environment parameters include an ambient temperature, a steady-state junction loop thermal resistance value and a transient junction loop thermal resistance value of the dut, and step S226 includes: and analyzing according to the average avalanche power, the ambient temperature and the thermal resistance value of the steady-state junction ring to obtain the average junction temperature. Step S227 includes: and analyzing according to the avalanche power and the thermal resistance value of the transient junction ring to obtain junction temperature variation.
Specifically, in this embodiment, the ambient temperature is used to calculate the average junction temperature, the steady-state thermal resistance of the corresponding device to be measured is the steady-state junction-loop thermal resistance, and the transient thermal resistance is the transient junction-loop thermal resistance. The specific calculation of the average junction temperature is as follows:
Tj-ave＝PaveRja+Ta
wherein, Tj-aveRepresenting the average junction temperature, RjaRepresents the steady-state junction loop thermal resistance value, PaveRepresents the average avalanche power, TaRepresenting the ambient temperature. Steady state loop thermal resistance value RjaAnd the ambient temperature TaThe avalanche test parameter can be measured by other devices and then sent to a control device or a processor for executing the avalanche test parameter selection method in the application.
Further, the variation of the junction temperature is calculated as follows: Δ T ═ PAVZjaWherein Δ T represents a change amount of the thermostat temperature, PAVRepresenting the avalanche power, ZjaRepresenting the transient junction loop thermal resistance value. ZjaIs tavThe transient junction loop thermal resistance value under the pulse width can be specifically measured by measuring equipment, then a transient thermal resistance curve is deduced, and the transient junction loop thermal resistance value under the pulse width is measured according to tavAnd selecting the corresponding transient junction loop thermal resistance value.
In another embodiment, the testing environment parameters include an average case temperature, a steady-state case thermal resistance value and a transient-state case thermal resistance value of the dut, and the step S226 includes: and analyzing according to the average avalanche power, the average shell temperature and the steady-state crusting thermal resistance value to obtain the average junction temperature. Step S227 includes: and analyzing according to the avalanche power and the transient crusting thermal resistance value to obtain junction temperature variation.
Specifically, in this embodiment, the temperature of the casing of the device to be measured (i.e., the average casing temperature) is used to calculate the average junction temperature, the steady-state thermal resistance of the corresponding device to be measured is the steady-state junction-to-shell thermal resistance, and the transient thermal resistance is the transient junction-to-shell thermal resistance. The specific calculation of the average junction temperature is as follows:
Tj-ave＝PaveRjc+Tc
wherein, Tj-aveRepresenting the average junction temperature, RjcRepresents the steady-state incrustation thermal resistance value, PaveRepresents the average avalanche power, TcThe average shell temperature is indicated. Steady state crusting thermal resistance value RjcAnd the average shell temperature TcThe avalanche test parameter can be measured by other devices and then sent to a control device or a processor for executing the avalanche test parameter selection method in the application.
Further, the variation of the junction temperature is calculated as follows: Δ T ═ PAVZjcWherein Δ T represents a change amount of the thermostat temperature, PAVRepresenting the avalanche power, ZjcRepresenting the transient crusting thermal resistance. ZjcIs tavThe transient crusting thermal resistance value under the pulse width can be measured by a measuring device, and then a transient thermal resistance curve is deduced according to tavAnd selecting the corresponding transient crusting thermal resistance value.
In order to facilitate an understanding of the various embodiments of the present application, the present application is explained below in conjunction with detailed embodiments. In a more detailed embodiment, the load resistance value is zero and T is setjmax＝150℃，RjaThe pulse frequency f of the control end of the device to be tested is 100kHz, the duty ratio D is 0.5, and the environment temperature T is 0.2 ℃/W, the BVDSS is 100Va＝2Inductance L10 muH at 5 deg.C, supply voltage VDDAnd (5) verifying whether the repeated avalanche tolerance test parameter meets the highest junction temperature limit or not at 50V.
According to
Figure BDA0002856205580000171
Carrying out analysis calculation to obtain IARWhen it is 25A, take VAV1.3BVDSS 130 (based on the measured value, here for calculating the approximate value), let IARCarry-in type
Figure BDA0002856205580000172
Solving for tavv ═ 3.125 μ s; according to the formula
Figure BDA0002856205580000173
Calculation of EAR5.078 mJ; by substituting a known parameter into the database, the parameter,
Figure BDA0002856205580000181
and Pave＝EARF, solving for PAV＝1625W，Pave570.8W; according to Tj-ave＝PaveRja+TaCalculating the average junction temperature Tj-ave139.16 ℃ below a set junction temperature threshold TjmaxFurther, the peak junction temperature T can be calculatedMAX＝175℃。
As can be seen from the above examples, although the set parameter selected by the user can ensure that the average junction temperature does not exceed the preset junction temperature threshold, the peak junction temperature already exceeds the preset junction temperature threshold, and at this time, prompt information for adjusting the set parameter is output. At this time, the user can evaluate whether the selection of the test parameters is reasonable or not and whether the test parameters need to be adjusted or not, such as whether the VDD and the inductance L need to be adjusted or not, according to the actual conditions, such as the test severity.
According to the avalanche test parameter selection method, when repeated avalanche tolerance test is carried out on the device to be tested, the test environment parameters and the related set parameters of the repeated avalanche tolerance circuit can be obtained for analysis, and the junction temperature parameter of the device to be tested under the current set parameters is obtained. And then comparing and analyzing the junction temperature parameter with a preset junction temperature threshold value, and finally judging whether the set parameter is reasonable or not according to the comparison and analysis result, namely outputting corresponding reasonable information of the set parameter or adjusting prompt information of the set parameter according to the comparison and analysis result. Through the scheme, the user can be guided to set the avalanche tolerance parameters in the repeated avalanche tolerance test operation, so that the set parameters selected by the user can meet the repeated avalanche tolerance test requirements of the device to be tested, and the accuracy of repeated avalanche tolerance test results can be further ensured.
It should be understood that although the various steps in the flowcharts of fig. 1, 3-5, 7 are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least some of the steps in fig. 1, 3-5, and 7 may include multiple sub-steps or multiple stages that are not necessarily performed at the same time, but may be performed at different times, and the order of performing the sub-steps or stages is not necessarily sequential, but may be performed alternately or alternatingly with other steps or at least some of the sub-steps or stages of other steps.
Referring to fig. 9, an avalanche test parameter selection apparatus includes: a setting parameter obtaining module 100, a junction temperature parameter analyzing module 200 and a selection result prompting module 300.
The setting parameter obtaining module 100 is configured to obtain a test environment parameter and a setting parameter of the repeated avalanche tolerance test circuit; the junction temperature parameter analysis module 200 is configured to obtain a junction temperature parameter of the device to be tested under the current setting parameter according to the test environment parameter and the setting parameter, and compare and analyze the junction temperature parameter with a preset junction temperature threshold; the selected result prompting module 300 is used for outputting reasonable parameter setting information or prompting parameter adjustment information according to the comparison and analysis result.
In one embodiment, the junction temperature parameter includes a peak junction temperature, and the selection result prompting module 300 is further configured to output information that the set parameter is reasonable when the peak junction temperature is less than a preset junction temperature threshold; and when the peak junction temperature is greater than or equal to the preset junction temperature threshold, outputting prompt information for adjusting the set parameters.
In one embodiment, the junction temperature parameter includes a peak junction temperature, and the junction temperature parameter analysis module 200 is further configured to, when the load resistance value of the repeated avalanche tolerance test circuit is not zero, perform analysis according to the test environment parameter and the power supply voltage value, the inductance value, the load resistance value, the duty cycle of the working pulse, the working frequency, the on-resistance value of the device to be tested, and the breakdown voltage value of the device to be tested of the repeated avalanche tolerance test circuit, to obtain the peak junction temperature of the device to be tested; and when the load resistance value of the repeated avalanche tolerance test circuit is zero, analyzing according to the test environment parameters, the power supply voltage value, the inductance value, the duty ratio of the working pulse, the working frequency and the breakdown voltage value of the device to be tested, and obtaining the peak junction temperature of the device to be tested.
In one embodiment, the junction temperature parameter analysis module 200 is further configured to analyze the power supply voltage value, the load resistance value, and the on-resistance value of the device to be tested according to the repeated avalanche tolerance test circuit to obtain an avalanche current value; analyzing according to the avalanche current value, the load resistance value, the power supply voltage, the inductance value of the repeated avalanche tolerance test circuit and the breakdown voltage value of the device to be tested to obtain avalanche pulse width; analyzing according to the avalanche current value, the avalanche pulse width and the breakdown voltage value of the device to be tested to obtain a repeated avalanche energy value; analyzing according to the repeated avalanche energy value and the avalanche pulse width to obtain avalanche power; analyzing according to the repeated avalanche energy value and the working frequency of the repeated avalanche tolerance test circuit to obtain average avalanche power; analyzing according to the duty ratio of the working pulse of the repeated avalanche tolerance test circuit, the avalanche current value and the conduction resistance value of the device to be tested to obtain average conduction power; analyzing according to the average avalanche power, the average conduction power and the test environment parameters to obtain average junction temperature; analyzing according to the avalanche power and the test environment parameters to obtain junction temperature variation; and obtaining a junction temperature peak value according to the average junction temperature and the junction temperature variation.
In one embodiment, the test environment parameters include an environment temperature, a steady-state junction loop thermal resistance value and a transient-state junction loop thermal resistance value of the device to be tested, and the junction temperature parameter analysis module 200 is further configured to analyze the average avalanche power, the average conduction power, the environment temperature and the steady-state junction loop thermal resistance value to obtain an average junction temperature; and analyzing according to the avalanche power and the thermal resistance value of the transient junction ring to obtain junction temperature variation.
In one embodiment, the test environment parameters include an average case temperature, a steady-state case thermal resistance value and a transient-state case thermal resistance value of the device to be tested, and the junction temperature parameter analysis module 200 is further configured to analyze the average avalanche power, the average conduction power, the average case temperature and the steady-state case thermal resistance value to obtain an average junction temperature; and analyzing according to the avalanche power and the transient crusting thermal resistance value to obtain junction temperature variation.
In one embodiment, the junction temperature parameter analysis module 200 is further configured to analyze the test environment parameter and the power supply voltage value, the inductance value, the duty cycle of the working pulse, and the working frequency of the repeated avalanche tolerance test circuit to obtain an avalanche current value; analyzing according to the avalanche current value, the inductance value, the power supply voltage and the breakdown voltage value of the device to be tested to obtain the avalanche pulse width; analyzing according to the avalanche current value, the inductance value, the power supply voltage and the breakdown voltage value of the device to be tested to obtain a repeated avalanche energy value; analyzing according to the repeated avalanche energy value and the avalanche pulse width to obtain avalanche power; analyzing according to the repeated avalanche energy value and the working frequency to obtain average avalanche power; analyzing according to the average avalanche power and the test environment parameters to obtain average junction temperature; analyzing according to the avalanche power and the test environment parameters to obtain junction temperature variation; and obtaining a junction temperature peak value according to the average junction temperature and the junction temperature variation.
In one embodiment, the test environment parameters include an environment temperature, a steady-state junction loop thermal resistance value and a transient-state junction loop thermal resistance value of the device to be tested, and the junction temperature parameter analysis module 200 is further configured to analyze the average avalanche power, the environment temperature and the steady-state junction loop thermal resistance value to obtain an average junction temperature; and analyzing according to the avalanche power and the thermal resistance value of the transient junction ring to obtain junction temperature variation.
In one embodiment, the test environment parameters include an average case temperature, a steady-state case thermal resistance value and a transient-state case thermal resistance value of the device to be tested, and the junction temperature parameter analysis module 200 is further configured to analyze the average avalanche power, the average case temperature and the steady-state case thermal resistance value to obtain an average junction temperature. And analyzing according to the avalanche power and the transient crusting thermal resistance value to obtain junction temperature variation.
For the specific definition of the avalanche test parameter selection device, reference may be made to the above definition of the avalanche test parameter selection method, which is not described herein again. The modules in the avalanche test parameter selection device can be wholly or partially realized by software, hardware and a combination thereof. The modules can be embedded in a hardware form or independent from a processor in the computer device, and can also be stored in a memory in the computer device in a software form, so that the processor can call and execute operations corresponding to the modules.
The avalanche test parameter selection device can acquire the test environment parameters and the related set parameters of the repeated avalanche tolerance circuit for analysis when the repeated avalanche tolerance test is carried out on the device to be tested, so as to obtain the junction temperature parameter of the device to be tested under the current set parameters. And then comparing and analyzing the junction temperature parameter with a preset junction temperature threshold value, and finally judging whether the set parameter is reasonable or not according to the comparison and analysis result, namely outputting corresponding reasonable information of the set parameter or adjusting prompt information of the set parameter according to the comparison and analysis result. Through the scheme, the user can be guided to set the avalanche tolerance parameters in the repeated avalanche tolerance test operation, so that the set parameters selected by the user can meet the repeated avalanche tolerance test requirements of the device to be tested, and the accuracy of repeated avalanche tolerance test results can be further ensured.
In one embodiment, a computer device is provided, which may be a server, and its internal structure diagram may be as shown in fig. 10. The computer device includes a processor, a memory, a network interface, and a database connected by a system bus. Wherein the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device comprises a nonvolatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program, and a database. The internal memory provides an environment for the operation of an operating system and computer programs in the non-volatile storage medium. The database of the computer device is used for storing setting parameters. The network interface of the computer device is used for communicating with an external terminal through a network connection. The computer program is executed by a processor to implement an avalanche test parameter selection method.
Those skilled in the art will appreciate that the architecture shown in fig. 10 is merely a block diagram of some of the structures associated with the disclosed aspects and is not intended to limit the computing devices to which the disclosed aspects apply, as particular computing devices may include more or less components than those shown, or may combine certain components, or have a different arrangement of components.
In one embodiment, a computer device is provided, comprising a memory and a processor, the memory having a computer program stored therein, the processor implementing the following steps when executing the computer program: acquiring a test environment parameter and a setting parameter of a repeated avalanche tolerance test circuit; obtaining junction temperature parameters of the device to be tested under the current set parameters according to the test environment parameters and the set parameters, and comparing and analyzing the junction temperature parameters with a preset junction temperature threshold; and outputting reasonable information of the set parameters or prompt information for adjusting the set parameters according to the comparison and analysis result.
In one embodiment, the processor, when executing the computer program, further performs the steps of: when the load resistance value of the repeated avalanche tolerance test circuit is not zero, analyzing according to the test environment parameters and the power supply voltage value, the inductance value, the load resistance value, the working pulse duty ratio, the working frequency, the conduction resistance value of the device to be tested and the breakdown voltage value of the device to be tested of the repeated avalanche tolerance test circuit to obtain the peak junction temperature of the device to be tested; and when the load resistance value of the repeated avalanche tolerance test circuit is zero, analyzing according to the test environment parameters, the power supply voltage value, the inductance value, the duty ratio of the working pulse, the working frequency and the breakdown voltage value of the device to be tested, and obtaining the peak junction temperature of the device to be tested.
In one embodiment, the processor, when executing the computer program, further performs the steps of: analyzing according to the power supply voltage value, the load resistance value and the on-resistance value of the device to be tested of the repeated avalanche tolerance test circuit to obtain an avalanche current value; analyzing according to the avalanche current value, the load resistance value, the power supply voltage, the inductance value of the repeated avalanche tolerance test circuit and the breakdown voltage value of the device to be tested to obtain avalanche pulse width; analyzing according to the avalanche current value, the avalanche pulse width and the breakdown voltage value of the device to be tested to obtain a repeated avalanche energy value; analyzing according to the repeated avalanche energy value and the avalanche pulse width to obtain avalanche power; analyzing according to the repeated avalanche energy value and the working frequency of the repeated avalanche tolerance test circuit to obtain average avalanche power; analyzing according to the duty ratio of the working pulse of the repeated avalanche tolerance test circuit, the avalanche current value and the conduction resistance value of the device to be tested to obtain average conduction power; analyzing according to the average avalanche power, the average conduction power and the test environment parameters to obtain average junction temperature; analyzing according to the avalanche power and the test environment parameters to obtain junction temperature variation; and obtaining a junction temperature peak value according to the average junction temperature and the junction temperature variation.
In one embodiment, the processor, when executing the computer program, further performs the steps of: analyzing according to the average avalanche power, the average conduction power, the ambient temperature and the thermal resistance value of the steady-state junction ring to obtain the average junction temperature; and analyzing according to the avalanche power and the thermal resistance value of the transient junction ring to obtain junction temperature variation.
In one embodiment, the processor, when executing the computer program, further performs the steps of: analyzing according to the average avalanche power, the average conduction power, the average shell temperature and the steady-state crusting thermal resistance value to obtain average junction temperature; and analyzing according to the avalanche power and the transient crusting thermal resistance value to obtain junction temperature variation.
In one embodiment, the processor, when executing the computer program, further performs the steps of: analyzing according to the power supply voltage value, the inductance value, the working pulse duty ratio and the working frequency of the repeated avalanche tolerance test circuit to obtain an avalanche current value; analyzing according to the avalanche current value, the inductance value, the power supply voltage and the breakdown voltage value of the device to be tested to obtain the avalanche pulse width; analyzing according to the avalanche current value, the inductance value, the power supply voltage and the breakdown voltage value of the device to be tested to obtain a repeated avalanche energy value; analyzing according to the repeated avalanche energy value and the avalanche pulse width to obtain avalanche power; analyzing according to the repeated avalanche energy value and the working frequency to obtain average avalanche power; analyzing according to the average avalanche power and the test environment parameters to obtain average junction temperature; analyzing according to the avalanche power and the test environment parameters to obtain junction temperature variation; and obtaining a junction temperature peak value according to the average junction temperature and the junction temperature variation.
In one embodiment, the processor, when executing the computer program, further performs the steps of: analyzing according to the average avalanche power, the ambient temperature and the thermal resistance value of the steady-state junction ring to obtain the average junction temperature; and analyzing according to the avalanche power and the thermal resistance value of the transient junction ring to obtain junction temperature variation.
In one embodiment, the processor, when executing the computer program, further performs the steps of: analyzing according to the average avalanche power, the average shell temperature and the steady-state crusting thermal resistance value to obtain the average junction temperature; and analyzing according to the avalanche power and the transient crusting thermal resistance value to obtain junction temperature variation.
In an embodiment, a computer-readable storage medium is provided, on which a computer program is stored, which, when being executed by a processor, implements method steps consistent with the method performed by the processor of the computer device as described above, and which will not be described herein again.
It will be understood by those skilled in the art that all or part of the processes of the methods of the embodiments described above can be implemented by hardware instructions of a computer program, which can be stored in a non-volatile computer-readable storage medium, and when executed, can include the processes of the embodiments of the methods described above. Any reference to memory, storage, database, or other medium used in the embodiments provided herein may include non-volatile and/or volatile memory, among others. Non-volatile memory can include read-only memory (ROM), Programmable ROM (PROM), Electrically Programmable ROM (EPROM), Electrically Erasable Programmable ROM (EEPROM), or flash memory. Volatile memory can include Random Access Memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in a variety of forms such as Static RAM (SRAM), Dynamic RAM (DRAM), Synchronous DRAM (SDRAM), Double Data Rate SDRAM (DDRSDRAM), Enhanced SDRAM (ESDRAM), Synchronous Link DRAM (SLDRAM), Rambus Direct RAM (RDRAM), direct bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM).
When the computer equipment and the storage medium carry out repeated avalanche tolerance test on the device to be tested, the related set parameters of the repeated avalanche tolerance circuit can be obtained for analysis, and the junction temperature parameter of the device to be tested under the current set parameters is obtained. And then comparing and analyzing the junction temperature parameter with a preset junction temperature threshold value, and finally judging whether the set parameter is reasonable or not according to the comparison and analysis result, namely outputting corresponding reasonable information of the set parameter or adjusting prompt information of the set parameter according to the comparison and analysis result. Through the scheme, the user can be guided to set the avalanche tolerance parameters in the repeated avalanche tolerance test operation, so that the set parameters selected by the user can meet the repeated avalanche tolerance test requirements of the device to be tested, and the accuracy of repeated avalanche tolerance test results can be further ensured.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (10)

1. A method for selecting avalanche test parameters is characterized by comprising the following steps:
acquiring a test environment parameter and a setting parameter of a repeated avalanche tolerance test circuit;
obtaining junction temperature parameters of the device to be tested under the current set parameters according to the test environment parameters and the set parameters, and comparing and analyzing the junction temperature parameters with a preset junction temperature threshold;
and outputting reasonable information of the set parameters or prompt information for adjusting the set parameters according to the comparison and analysis result.
2. The avalanche test parameter selection method according to claim 1, wherein the junction temperature parameter includes a peak junction temperature, and the step of outputting information on reasonability of the setting parameter or prompt information on adjustment of the setting parameter according to the comparison and analysis result includes:
when the peak junction temperature is smaller than the preset junction temperature threshold, outputting information with reasonable set parameters;
and when the peak junction temperature is greater than or equal to the preset junction temperature threshold, outputting prompt information for adjusting set parameters.
3. The avalanche test parameter selection method according to claim 1, wherein the junction temperature parameter includes a peak junction temperature, and the step of obtaining the junction temperature parameter of the device under test under the current setting parameter from the test environment parameter and the setting parameter includes:
when the load resistance value of the repeated avalanche tolerance test circuit is not zero, analyzing according to the test environment parameters and the power supply voltage value, the inductance value, the load resistance value, the working pulse duty ratio, the working frequency, the conduction resistance value of the device to be tested and the breakdown voltage value of the device to be tested of the repeated avalanche tolerance test circuit to obtain the peak junction temperature of the device to be tested;
and when the load resistance value of the repeated avalanche tolerance test circuit is zero, analyzing according to the test environment parameters, the power supply voltage value, the inductance value, the working pulse duty ratio, the working frequency and the breakdown voltage value of the device to be tested of the repeated avalanche tolerance test circuit to obtain the peak junction temperature of the device to be tested.
4. The avalanche test parameter selection method according to claim 3, wherein the step of obtaining the peak junction temperature of the device under test by analyzing the test environment parameter and the supply voltage value, the inductance value, the load resistance value, the duty cycle of the working pulse, the working frequency, the on-resistance value of the device under test and the breakdown voltage value of the device under test of the repetitive avalanche tolerance test circuit includes:
analyzing according to the power supply voltage value, the load resistance value and the on-resistance value of the device to be tested of the repeated avalanche tolerance test circuit to obtain an avalanche current value;
analyzing according to the avalanche current value, the load resistance value, the power supply voltage, the inductance value of the repeated avalanche tolerance test circuit and the breakdown voltage value of the device to be tested to obtain an avalanche pulse width;
analyzing according to the avalanche current value, the avalanche pulse width and the breakdown voltage value of the device to be tested to obtain a repeated avalanche energy value;
analyzing according to the repeated avalanche energy value and the avalanche pulse width to obtain avalanche power;
analyzing according to the repeated avalanche energy value and the working frequency of the repeated avalanche tolerance test circuit to obtain average avalanche power;
analyzing according to the duty ratio of the working pulse of the repeated avalanche tolerance test circuit, the avalanche current value and the on-resistance value of the device to be tested to obtain average on-power;
analyzing according to the average avalanche power, the average conduction power and the test environment parameters to obtain average junction temperature;
analyzing according to the avalanche power and the test environment parameters to obtain junction temperature variation;
and obtaining a junction temperature peak value according to the average junction temperature and the junction temperature variation.
5. The method as claimed in claim 4, wherein the testing environment parameters include an environment temperature, a steady-state junction loop thermal resistance value and a transient junction loop thermal resistance value of the device under test, and the step of analyzing the average avalanche power, the average on-state power and the testing environment parameters to obtain an average junction temperature includes:
analyzing according to the average avalanche power, the average conduction power, the environment temperature and the steady-state junction loop thermal resistance value to obtain an average junction temperature;
the step of analyzing according to the avalanche power and the test environment parameters to obtain junction temperature variation includes:
analyzing according to the avalanche power and the thermal resistance value of the transient junction ring to obtain junction temperature variation;
or, the test environment parameters include an average shell temperature, a steady-state junction thermal resistance value and a transient junction thermal resistance value of the device to be tested, and the step of analyzing according to the average avalanche power, the average conduction power and the test environment parameters to obtain an average junction temperature includes:
analyzing according to the average avalanche power, the average conduction power, the average shell temperature and the steady-state crust thermal resistance value to obtain an average junction temperature;
the step of analyzing according to the avalanche power and the test environment parameters to obtain junction temperature variation includes:
and analyzing according to the avalanche power and the transient crusting thermal resistance value to obtain junction temperature variation.
6. The avalanche test parameter selection method according to claim 3, wherein the step of obtaining the peak junction temperature of the device under test by analyzing the test environment parameter and the supply voltage value, the inductance value, the load resistance value, the duty cycle of the working pulse, the working frequency, the on-resistance value of the device under test and the breakdown voltage value of the device under test of the repetitive avalanche tolerance test circuit includes:
analyzing according to the power supply voltage value, the inductance value, the working pulse duty ratio and the working frequency of the repeated avalanche tolerance test circuit to obtain an avalanche current value;
analyzing according to the avalanche current value, the inductance value, the power supply voltage and the breakdown voltage value of the device to be tested to obtain avalanche pulse width;
analyzing according to the avalanche current value, the inductance value, the power supply voltage and the breakdown voltage value of the device to be tested to obtain a repeated avalanche energy value;
analyzing according to the repeated avalanche energy value and the avalanche pulse width to obtain avalanche power;
analyzing according to the repeated avalanche energy value and the working frequency to obtain average avalanche power;
analyzing according to the average avalanche power and the test environment parameters to obtain average junction temperature;
analyzing according to the avalanche power and the test environment parameters to obtain junction temperature variation;
and obtaining a junction temperature peak value according to the average junction temperature and the junction temperature variation.
7. The method as claimed in claim 6, wherein the testing environment parameters include an environment temperature, a steady-state junction loop thermal resistance value and a transient-state junction loop thermal resistance value of the device under test, and the step of analyzing the average avalanche power and the testing environment parameters to obtain the average junction temperature includes:
analyzing according to the average avalanche power, the environment temperature and the thermal resistance value of the steady-state junction ring to obtain average junction temperature;
the step of analyzing according to the avalanche power and the test environment parameters to obtain junction temperature variation includes:
analyzing according to the avalanche power and the thermal resistance value of the transient junction ring to obtain junction temperature variation;
or, the test environment parameters include an average shell temperature, a steady-state crust thermal resistance value and a transient-state crust thermal resistance value of the device to be tested, and the step of analyzing according to the average avalanche power and the test environment parameters to obtain the average junction temperature includes:
analyzing according to the average avalanche power, the average shell temperature and the steady-state crusting thermal resistance value to obtain average junction temperature;
the step of analyzing according to the avalanche power and the test environment parameters to obtain junction temperature variation includes:
and analyzing according to the avalanche power and the transient crusting thermal resistance value to obtain junction temperature variation.
8. An avalanche test parameter selection apparatus, comprising:
the setting parameter acquisition module is used for acquiring the testing environment parameters and the setting parameters of the repeated avalanche tolerance testing circuit;
the junction temperature parameter analysis module is used for obtaining junction temperature parameters of the device to be tested under the current set parameters according to the test environment parameters and the set parameters, and comparing and analyzing the junction temperature parameters with a preset junction temperature threshold value;
and the selection result prompting module is used for outputting reasonable parameter setting information or prompting information for adjusting the parameter setting according to the comparison and analysis result.
9. A computer device comprising a memory and a processor, the memory storing a computer program, wherein the processor implements the steps of the method of any one of claims 1 to 7 when executing the computer program.
10. A computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, carries out the steps of the method of any one of claims 1 to 7.
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