CN112763061A - Two-dimensional superconducting nanowire pixel array structure based on thermal coupling structure and imager - Google Patents
Two-dimensional superconducting nanowire pixel array structure based on thermal coupling structure and imager Download PDFInfo
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Abstract
The invention discloses a two-dimensional superconducting nanowire pixel array structure based on a thermal coupling structure and an imager. The pixel array structure comprises a double-layer superconducting nanowire imaging device, wherein an upper-layer superconducting nanowire imaging device and a lower-layer superconducting nanowire imaging device are two single photon detection systems which work independently, the two single photon detection systems are separated by a middle insulating layer, and the heat effect after the single-layer superconducting nanowire imaging device responds to photons is transmitted to another layer of superconducting nanowire imaging device to trigger the other layer of superconducting nanowire imaging device, so that a double-layer superconducting nanowire response output signal is realized. The invention can effectively realize the imaging of the large-array superconducting nanowire, is a superconducting nanowire imager by utilizing a micro-nano heat transfer physical model, expands the pixel scale of the superconducting nanowire imager, improves the pixel duty ratio, improves the detection efficiency of the superconducting nanowire delay line readout imager and realizes the sub-band pixel spatial resolution of infrared band imaging.
Description
Technical Field
The invention belongs to the technical field of superconducting single photon detection, and relates to a two-dimensional superconducting nanowire pixel array and an imager based on a thermal coupling structure.
Background
The superconducting single photon imaging technology is an important link in scientific researches such as quantum communication, deep space exploration and the like. Compared with a semiconductor single-photon detector, the large-array superconducting nanowire single-photon detector has the advantages of high efficiency, low time jitter, high sensitivity, low dark-mark noise and the like, and is a single-photon detection implementation means with the best comprehensive performance. The single photon detector inevitably faces the problem of complex reading circuit to realize large array scale. By utilizing a superconducting nanowire delay line reading mode, the Nanjing university Zhao Qingyuan professor in 2017 responds to a single photon, detects the time difference/sum of the arrival of signals at two ends and obtains the position and time of the arrival of the photons at the surface of a detector. The two-end reading mode of Zhao QY, et al, single-photon image based on a superconducting nanowire delay line Nat photonics.2017, greatly simplifies the reading circuit of the imaging technology of the large-array superconducting nanowire. This technique, however, suffers from the problem of relatively low pixel size due to the large duty cycle of the delay line. The low duty cycle also limits the efficiency of photon detection.
Disclosure of Invention
Aiming at the defects of large space occupation, low detection efficiency and the like of the delay line of the conventional single-layer superconducting nanowire imager, the invention provides the double-layer thermally coupled superconducting nanowire single-photon imager, the imager reserves the simple reading advantage of the single-layer device based on the delay line through the thermal coupling of two layers of devices, determines the position coordinates of x and y dimensions by reaching the surface of the device through a single-photon signal, reduces the distance between adjacent pixels, improves the pixel scale and improves the detection efficiency.
The invention provides the following technical scheme:
the two-dimensional superconducting nanowire pixel array structure based on the thermal coupling structure comprises a double-layer superconducting nanowire imaging device, namely an upper-layer superconducting nanowire imaging device and a lower-layer superconducting nanowire imaging device, wherein the superconducting nanowire imaging device comprises a superconducting delay line, the superconducting delay line comprises a delay line and a superconducting avalanche nanowire detection unit, the upper-layer superconducting nanowire imaging device and the lower-layer superconducting nanowire imaging device are two single photon detection systems which work independently, the two single photon detection systems are separated by an intermediate insulating layer, and the two single-layer superconducting nanowire imaging device responds to photons, and then the heat effect is transmitted to the other layer of superconducting nanowire imaging device to trigger the other layer of superconducting nanowire imaging device, so that the double-layer superconducting nanowire responds to output signals.
Furthermore, the superconducting avalanche nanowire detection unit is of an avalanche nanowire structure, and the structure is composed of two parallel nanowires.
Furthermore, the delay line further comprises an impedance transformation gradually-changing line at two ends of the delay line, and the impedance transformation gradually-changing line is used for leading out the high-resistance port of the delay line into a low-resistance port through line width gradual change.
Furthermore, the time difference of the trigger signals of the double-layer superconducting nanowire imaging device is interlayer thermal coupling delay time, a pair of pulse signals in two directions are generated by the upper layer and the lower layer, and the double-layer device has four pulse reading signals in total and is used for accurately judging the coordinate information of the photon reaching position.
Furthermore, the micro-nano processing technology of the upper superconducting nanowire imaging device and the lower superconducting nanowire imaging device is the same, and the material structure, the superconducting performance and the photon detection performance of the upper superconducting nanowire imaging device and the lower superconducting nanowire imaging device are consistent.
Furthermore, the intermediate insulating layer is a silicon oxide layer with a thickness of 200nm +/-20 nm.
Furthermore, the interlayer heat flux of the upper layer superconducting nanowire imaging device and the lower layer superconducting nanowire imaging device is as follows:
wherein q ist、RbD and k respectively represent heat flux, nanowire-silicon oxide boundary thermal resistance, silicon oxide thickness and silicon oxide thermal conductivity;
the photon arrival positions are:
wherein, Deltax and Delay represent the photon arrival position coordinates of the A layer and B layer devices respectively, and dgL, v and t respectively represent the pixel spacing, the length of the single-pixel nanowire and the delay line, the signal rate and the signal arrival time;
lower rounded symbols;
the photon arrival time and heat transfer time are:
wherein, Δ tpt、ΔtpnRespectively representing photon arrival time and interlayer phonon heat transfer time, trThe laser signal is referenced to time.
The two-dimensional superconducting nanowire imager based on the thermal coupling structure comprises the two-dimensional superconducting nanowire pixel array structure based on the thermal coupling structure and a reading circuit connected with the two-dimensional superconducting nanowire pixel array structure, the upper superconducting nanowire imaging device and the lower superconducting nanowire imaging device are provided with mutually independent transmission delay line structures, after photons reach the surface of the nanowire to trigger a heat effect, pulse signals are transmitted to two ends of the devices along the delay lines, the arrival positions and the arrival times of the photons are judged according to the time difference of the signals reaching the two ends and the time difference of relative laser synchronous signals read by the reading circuit, and single photon imaging is achieved.
The invention has the following beneficial effects:
the invention provides a mode for effectively realizing a large-array superconducting nanowire imaging device. The invention relates to a superconducting nanowire imager utilizing a micro-nano heat transfer physical model, which expands the pixel scale of the superconducting nanowire imager and improves the duty ratio of pixels. The invention improves the detection efficiency of the superconducting nanowire delay line readout imager and realizes the sub-band pixel spatial resolution of infrared band imaging.
The invention realizes the large-array single photon imaging of a double-layer thermal coupling working mechanism, adopts an avalanche parallel nanowire structure and well avoids the phenomenon of thermal crosstalk between pixels. And the double-layer nanowire is triggered by a single photon through thermal coupling mechanism imaging, and the two-dimensional coordinate of the photon arrival position is read. The device reserves a delay line reading mode and has the advantages of four ports for reading a large array single photon detector. By adopting the novel double-layer structure, the pixel scale and the detection efficiency of the superconducting nanowire imager are improved, and the infrared band imaging sub-band pixel spatial resolution is realized.
Drawings
Fig. 1 is a schematic diagram of the device operation.
FIG. 2 is a schematic diagram of a two-layer core.
Fig. 3 is an electron microscope photograph of the avalanche structure detection unit.
FIG. 4 is a timing diagram for single photon signal readout
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
The invention relates to a superconducting nanowire device based on interlayer heat transfer, and a single pixel absorbs photons under a low-temperature environment to cause quenching and heating of an avalanche structure. The heat accumulation effect of the avalanche structure ensures that enough heat energy is transferred to another layer to trigger the avalanche structure of the layer, thereby realizing double-layer thermally coupled cascade avalanche triggering. Each avalanche structure parameter is 1-10um (preferably 4um) long, 90nm + -10 nm x 2 wide, 300nm + -10 nm spacing between elements. The structure provides a higher signal-to-noise ratio on one hand, limits the length of a heat island generated by superconducting nanowire quench on the other hand, and well avoids thermal crosstalk between pixels. After single photon response, the interlayer thermal signal propagation time is about 10ns, which indicates that the maximum working speed of the device can reach the hundred million level.
According to the low-temperature heat conduction theory, two layers of superconducting nanowire chips are prepared on the surface of the same wafer and are laminated in an orthogonal mode, so that a single-layer device can respond local heat to trigger another layer of device, and the imaging function of a double-layer device is achieved. Compared with a single-layer device, the imaging area with the same area is increased from the original pixel number N to NxN, and the pixel scale of the superconducting nanowire imaging device is greatly increased. The detection unit is only two parallel superconductive nanowires with the line width of 90nm, and the double-layer high-pixel-scale device can realize the resolution of an infrared band sub-band pixel space. Furthermore, the integration of the pixels enables the absorption efficiency of the imager to single photons to be higher, and the overall detection efficiency of the device is improved.
Example one
The embodiment provides a two-dimensional superconducting nanowire pixel array structure based on a thermal coupling structure as shown in fig. 2, the pixel array structure comprises a double-layer device composed of an upper layer superconducting nanowire imaging device and a lower layer superconducting nanowire imaging device, and a response pixel is arranged at a cross part. The specific structure of the single-layer superconducting nanowire imaging device is shown in fig. 3, and comprises a superconducting delay line, wherein the superconducting delay line comprises a delay line and a superconducting avalanche nanowire detection unit, the superconducting avalanche nanowire detection unit is of an avalanche nanowire structure, the structure is composed of two parallel nanowires, the superconducting transition current of the avalanche structure is smaller than that of the delay line, the photon triggering response at the structure is ensured, and the signal-to-noise ratio of voltage readout pulses is improved. Because the upper superconducting nanowire imaging device and the lower superconducting nanowire imaging device are of one-dimensional structures, the combined double-layer device can form a two-dimensional imaging effect. The upper superconducting nanowire imaging device and the lower superconducting nanowire imaging device are two single photon detection systems which work independently, are insulated and separated by an intermediate insulating layer (for example, a silicon oxide layer can be selected, the thickness is preferably 200nm +/-20 nm, and the method for depositing the silicon oxide layer comprises but is not limited to a chemical vapor deposition method and an electron beam evaporation method), and the thermal effect after a single layer of response photons is transmitted to the other layer to trigger the devices, so that a double-layer superconducting nanowire response output signal is realized. The pixel avalanche structure ensures the response effect of photons at the avalanche structure with great probability, and the heat energy gathered is not excessively diffused to two ends to cause thermal crosstalk between pixels.
The upper layer superconducting avalanche nanowire detector and the lower layer superconducting avalanche nanowire detector both adopt a two-terminal reading mode, and the double-layer device is read by 2 x 2 (namely four ports) in total to confirm photon arrival position and arrival time information. The time difference of the trigger signals of the double-layer device is expressed as interlayer thermal coupling delay time. The upper layer and the lower layer both generate a pair of pulse signals in two directions, and the double-layer device reads out the signals by four pulses in total, so that the coordinate information of the photon reaching position is accurately judged.
In this embodiment, the port of the double-layer device is connected to the impedance transformation gradient structure, the gradient is designed according to the structure and size of the superconducting material, and the high-resistance port of the delay line is gradually led out as a low-resistance port through the line width for reading. The structure realizes the conversion from the high-resistance end of the superconducting nanowire to the low-resistance reading end of 50 ohms, ensures the impedance matching of the reading port and improves the signal-to-noise ratio of signal reading.
In this embodiment, a superconducting delay line structure is further connected between the port of the double-layer device and the impedance transformation gradient line, and the superconducting delay line structure is used for forming a time difference of a signal reaching the readout port and distinguishing photon arrival position and arrival time information. The cross-epitaxy is a delay line structure, does not have the capability of responding to photons, and delays the signal action. The delay line is a round-trip U-shaped long delay line structure, and the length of a single U-shaped structure is LτAnd the signal delay distance between the pixels is provided, so that the signal resolution reading between single-layer pixels is ensured.
In this embodiment, the widths of the upper layer superconducting avalanche nanowire detector and the lower layer superconducting avalanche nanowire detector are the same, that is, the avalanche structure pixel array is a superconducting photon response structure formed by connecting two nanowires with the same width in parallel. The width may further be preferably 90 nm. The two layers of detectors preferably adopt the same micro-nano processing technology (including photoetching, electron beam exposure, reactive ion etching and the like), so that the consistency of the material structure, the superconducting performance and the photon detection performance of the upper and lower layer devices is ensured.
After the single-layer device responds to photons, a hot point formed by local superconducting transformation serves as a hot end to transmit heat to another layer of nano wires serving as a cold end. The heat flux between the two layers is calculated by a low-temperature thermoacoustic mismatch model, and the heat flux is expressed as:
wherein q ist、RbD, k represent heat flux, nanowire-silicon oxide boundary thermal resistance, silicon oxide thickness and silicon oxide thermal conductivity, respectively.
After the single-layer device responds to photons, a heat island is formed by local superconducting transition, and the temperature is between the superconducting transition temperature of the nanowire and 7K. The single-layer heat island is used as a hot end to transfer heat to another layer of nano wires (used as a cold end, the temperature is 1.5K), and double-layer triggering is realized. The heat transfer time of the heat transfer layer with the thickness of 200nm is about 10 ns. The intermediate silicon oxide layer is deposited by a chemical vapor deposition method at the temperature of 50 ℃.
After the device responds to photons, signals are output to an amplifier from a superconducting gradient line and then input into a speed-per-hour converter circuit, the time difference of the signals is read, and the overall working mode is shown in fig. 1. Based on the effect of delay line on signal transmission, in the waveguide structure, the signal transmission rate is two percent (v is 2%. c) of the light speed, and the arrival position of photons is determined by the time difference of the arrival of the signals at two ends. By extracting the four-terminal signal, as shown in fig. 4, photon arrival position information is obtained according to the time relationship of four pulse signals:
wherein, Deltax and Delay represent the photon arrival position coordinates of the A layer and B layer devices respectively, and dgL, v and t respectively represent the pixel spacing, the length of the single-pixel nanowire and the delay line, the signal rate and the signal arrival time;
the rounding symbol is lower.
The photon arrival time information and the heat transfer time are determined by the sum of the arrival times of the channels. Photon arrival time and heat transfer time information:
wherein, Δ tpt、ΔtpnRespectively representing photon arrival time and interlayer phonon heat transfer time, trThe laser signal is referenced to time.
Example two
The present embodiment provides a two-dimensional superconducting nanowire imager based on a thermal coupling structure as shown in fig. 1. The two-dimensional superconducting nanowire imager comprises a two-dimensional superconducting nanowire pixel array structure based on a thermal coupling structure and a readout circuit connected with the two-dimensional superconducting nanowire pixel array structure, wherein the readout circuit comprises a direct current Bias circuit, an amplifier readout circuit (in the embodiment, the amplifier readout circuit preferably comprises a T-shaped Bias Tee, an amplifier and a Time-to-Digital Converter (TDC)), an amplified signal is input to the Time-to-Digital Converter to read out a signal Time difference, and the Time-difference signal is converted into a Digital signal to be read out. The upper superconducting nanowire imaging device and the lower superconducting nanowire imaging device are provided with mutually independent transmission delay line structures, pulse signals are transmitted to two ends of the devices along the delay lines after photons reach the surface of the nanowires to trigger a heat effect, and the arrival positions and the arrival times of the photons are judged according to the time difference of signals reaching the two ends and the time difference of relative laser synchronous signals read by a reading circuit, so that single photon imaging is realized.
Further, the intermediate insulating layer of the two-layer device is a silicon oxide layer with a thickness of about 200nm deposited by a material deposition process. Deposition methods include, but are not limited to, chemical vapor deposition, electron beam evaporation.
In summary, the invention provides a two-dimensional superconducting nanowire pixel array based on a thermal coupling structure and an imager. The pixel array comprises an upper layer of superconducting avalanche nanowire detector, a lower layer of superconducting delay line, an impedance transformation gradient line, an intermediate insulating layer, an avalanche pixel array, a superconducting delay line and a matching impedance gradient line. The lower layer one-dimensional imaging device provides row address output, the upper layer one-dimensional imaging device provides column address output, a certain layer of nanowires responds to photons at a superconducting transition temperature, superconducting phase change occurs to form a hot area, a heat effect is transmitted to another layer of pixels to trigger superconducting transition, single photon response is achieved at one time, meanwhile, the double-layer imaging device is excited, row and column address output is achieved, and a two-dimensional imaging effect is achieved. The invention is based on a delay line reading mode, each layer of imaging device provides 1 multiplied by N position resolution, an N multiplied by N two-dimensional pixel array is realized through a thermal coupling structure, the whole device only needs four reading ports, and the invention has the advantages of simple reading, high integration level and strong expandability. The middle oxide layer realizes electrical insulation and thermal conduction between layers, ensures that two layers of devices work independently and can be triggered together through thermo-acoustic coupling. The novel superconducting nanowire imager greatly improves the pixel scale, the spatial resolution and the duty ratio of a superconducting nanowire single-photon imaging device, and provides possibility for realizing a new generation of high-performance superconducting single-photon camera.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the present invention. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. The two-dimensional superconducting nanowire pixel array structure based on the thermal coupling structure is characterized by comprising a double-layer superconducting nanowire imaging device, namely an upper-layer superconducting nanowire imaging device and a lower-layer superconducting nanowire imaging device, wherein the superconducting nanowire imaging device comprises a superconducting delay line, the superconducting delay line comprises a delay line and a superconducting avalanche nanowire detection unit, the upper-layer superconducting nanowire imaging device and the lower-layer superconducting nanowire imaging device are two single photon detection systems which work independently, the two single photon detection systems are separated by an intermediate insulating layer, and the two single-layer superconducting nanowire imaging device is triggered by another layer of superconducting nanowire imaging device through the transmission of the thermal effect of the single-layer superconducting nanowire imaging device after responding to photons, so that the double-layer superconducting nanowire response output signal is realized.
2. The thermally coupled structure-based two-dimensional superconducting nanowire pixel array structure of claim 1, wherein the superconducting avalanche nanowire detection unit is an avalanche nanowire structure, and the structure is composed of two parallel nanowires connected in parallel.
3. The two-dimensional superconducting nanowire pixel array structure based on the thermal coupling structure of claim 1, further comprising an impedance transformation gradually-changing line at two ends of the delay line, wherein the impedance transformation gradually-changing line is used for leading out a high-resistance port of the delay line into a low-resistance port through line width gradual change.
4. The two-dimensional superconducting nanowire pixel array structure based on the thermal coupling structure of claim 1, wherein the time difference of the trigger signals of the double-layer superconducting nanowire imaging device is the interlayer thermal coupling delay time, a pair of pulse signals in two directions are generated by the upper layer and the lower layer, and the double-layer device totally has four pulse read-out signals for accurately judging the coordinate information of the photon reaching position.
5. The two-dimensional superconducting nanowire pixel array structure based on the thermal coupling structure according to claim 1, wherein the micro-nano processing technology of the upper layer superconducting nanowire imaging device and the lower layer superconducting nanowire imaging device is the same, and the material structure, the superconducting performance and the photon detection performance of the upper layer superconducting nanowire imaging device and the lower layer superconducting nanowire imaging device are the same.
6. The two-dimensional superconducting nanowire pixel array structure based on the thermal coupling structure of claim 1, wherein the intermediate insulating layer is a silicon oxide layer with a thickness of 200nm ± 20 nm.
7. The two-dimensional superconducting nanowire pixel array structure based on the thermal coupling structure of claim 1, wherein the interlayer heat flux of the upper layer superconducting nanowire imaging device and the lower layer superconducting nanowire imaging device is:
wherein q ist、RbD and k respectively represent heat flux, nanowire-silicon oxide boundary thermal resistance, silicon oxide thickness and silicon oxide thermal conductivity;
the photon arrival positions are:
wherein, Deltax and Delay represent the photon arrival position coordinates of the A layer and B layer devices respectively, and dgL, v and t respectively represent the pixel spacing, the length of the single-pixel nanowire and the delay line, the signal rate and the signal arrival time;
lower rounded symbols;
the photon arrival time and heat transfer time are:
wherein, Δ tpt、ΔtpnRespectively representing photon arrival time and interlayer phonon heat transfer time, trThe laser signal is referenced to time.
8. The two-dimensional superconducting nanowire imager based on the thermal coupling structure is characterized by comprising the two-dimensional superconducting nanowire pixel array structure based on the thermal coupling structure and a reading circuit connected with the two-dimensional superconducting nanowire pixel array structure, wherein the two-dimensional superconducting nanowire pixel array structure based on the thermal coupling structure is as claimed in any one of claims 1 to 7, the upper superconducting nanowire imaging device and the lower superconducting nanowire imaging device are provided with mutually independent transmission delay line structures, pulse signals are transmitted to two ends of the devices along delay lines after photons reach the surface of a nanowire to trigger a thermal effect, and the arrival positions and the arrival times of the photons are judged according to the time difference of the read signals of the reading circuit reaching the two ends and the time difference of relative single photon synchronous signals, so that imaging is.
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| CN110501066A (en) * | 2019-08-15 | 2019-11-26 | 南京大学 | A kind of superconducting single-photon imager based on snowslide nanowire structure |
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