CN112750965A - Display panel, manufacturing method of display panel and display device - Google Patents
Display panel, manufacturing method of display panel and display device Download PDFInfo
- Publication number
- CN112750965A CN112750965A CN202110008489.7A CN202110008489A CN112750965A CN 112750965 A CN112750965 A CN 112750965A CN 202110008489 A CN202110008489 A CN 202110008489A CN 112750965 A CN112750965 A CN 112750965A
- Authority
- CN
- China
- Prior art keywords
- layer
- light
- cathode
- display panel
- film transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The application provides a display panel, a manufacturing method of the display panel and a display device. The display panel has a display region and a light-transmissive display region. The display area and the light-transmitting display area are adjacently arranged. The display panel includes: a substrate; the first light-emitting functional layer is arranged on the substrate and corresponds to the display area, and the first light-emitting functional layer is provided with a first cathode layer; and the second light-emitting functional layer is arranged on the substrate and corresponds to the light-transmitting display area, and the second light-emitting functional layer is provided with a second cathode layer. Wherein a separation groove is provided between the first cathode layer and the second cathode layer. A first drive signal is input through the first cathode layer, and a second drive signal is input through the second cathode layer. The first drive signal and the second drive signal are different. According to the display area and the light-transmitting display area, on the premise that the display area and the light-transmitting display area are the same in brightness, the power consumption of a screen can be reduced.
Description
Technical Field
The invention relates to the field of display, in particular to a display panel, a manufacturing method of the display panel and a display device.
Background
An Organic Light Emitting Diode (OLED) display screen with a high screen ratio. The light-transmitting display area of the screen corresponding to the camera placing area is provided with pixels, and has a display function and a light-transmitting function so as to improve the integrity of screen display. In order to improve the transmittance of the light-transmitting display region, the pixel unit area of the light-transmitting display region is set to be smaller than that of the normal display region. In order to ensure that the luminance of the light-transmitting display area is consistent with that of the normal display area, the current density of the OLED device in the light-transmitting display area needs to be increased, so that the cross-over Voltage of the OLED device is increased, and the corresponding cathode Voltage (VSS) point position needs to be negatively biased. The cathode of the display screen is of a whole-surface integrated structure, and when the cathode VSS potentials of the normal display area and the light-transmitting display area are consistent, the whole power consumption of the screen is obviously increased.
Disclosure of Invention
The application provides a display panel, a manufacturing method of the display panel and a display device, which can reduce screen power consumption on the premise that the brightness of a normal display area is the same as that of a light-transmitting display area.
To solve the above problems, a display panel is provided. The display panel has display area and printing opacity display area, the display area with the adjacent setting in printing opacity display area, display panel includes:
a substrate;
the first light-emitting functional layer is arranged on the substrate and corresponds to the display area, and the first light-emitting functional layer is provided with a first cathode layer;
the second light-emitting functional layer is arranged on the substrate and corresponds to the light-transmitting display area, and the second light-emitting functional layer is provided with a second cathode layer;
wherein a separation groove is provided between the first cathode layer and the second cathode layer, a first drive signal is input through the first cathode layer, a second drive signal is input through the second cathode layer, and the first drive signal and the second drive signal are different.
In an embodiment of the present application, the first cathode layer and the second cathode layer are disposed on the same layer.
In an embodiment of the present application, the display panel further includes a first thin film transistor and a second thin film transistor disposed adjacent to the first thin film transistor, the first thin film transistor is electrically connected to the first light-emitting functional layer, the second thin film transistor is located between the display area and the light-transmitting display area, and the second thin film transistor is electrically connected to the second light-emitting functional layer.
In an embodiment of the present application, the display panel further includes a second cathode connection portion for electrically connecting the second cathode layer, the second cathode connection portion is disposed on the same layer as the source/drain metal layers of the first thin film transistor and the second thin film transistor, a through hole is formed in the pixel definition layer of the second light-emitting functional layer and the flat layer of the second thin film transistor, and the second cathode layer extends to the through hole and is connected to the second cathode connection portion.
In an embodiment of the present application, the through-hole is disposed adjacent to the separation groove.
In an embodiment of the present application, the first light emitting functional layer further includes a first anode layer, the first anode layer is located the first cathode layer is close to one side of the substrate, the second light emitting functional layer further includes a second anode layer, the second anode layer is located the second cathode layer is close to one side of the substrate, and an area of the second anode layer is smaller than an area of the first anode layer.
In an embodiment of the present application, a metal layer for electrically connecting the second anode layer and the second thin film transistor is further disposed between the second anode layer and the second thin film transistor, and a transmittance of the metal layer in a visible light region is greater than 80%.
In an embodiment of the present application, the first drive signal is configured to supply a first cathode voltage to the first cathode layer, the second drive signal is configured to supply a second cathode voltage to the second cathode layer, and the first cathode voltage is different from the second cathode voltage.
Correspondingly, the application also provides a manufacturing method of the display panel, which comprises the following steps:
providing a substrate;
arranging a first light-emitting functional layer on the substrate, wherein the first light-emitting functional layer corresponds to a display area of the display panel and is provided with a first cathode layer;
arranging a second light-emitting functional layer on the substrate, wherein the second light-emitting functional layer corresponds to the light-transmitting display area of the display panel and is provided with a second cathode layer;
and a separation groove is arranged between the first cathode layer and the second cathode layer, a first driving signal is input through the first cathode layer, a second driving signal is input through the second cathode layer, and the first driving signal and the second driving signal are different.
Correspondingly, the application also provides a display device comprising the display panel.
The present application provides a display panel. The display panel has a display region and a light-transmissive display region. The display area and the light-transmitting display area are adjacently arranged. The display panel includes: a substrate; the first light-emitting functional layer is arranged on the substrate and corresponds to the display area, and the first light-emitting functional layer is provided with a first cathode layer; and the second light-emitting functional layer is arranged on the substrate and corresponds to the light-transmitting display area, and the second light-emitting functional layer is provided with a second cathode layer. Wherein a separation groove is provided between the first cathode layer and the second cathode layer. A first drive signal is input through the first cathode layer, and a second drive signal is input through the second cathode layer. The first drive signal and the second drive signal are different. According to the display area and the light-transmitting display area, on the premise that the display area and the light-transmitting display area are the same in brightness, the power consumption of a screen can be reduced.
Drawings
In order to more clearly illustrate the technical solutions in the present application, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a display panel provided in the present application.
Fig. 2 is a schematic structural diagram of another display panel provided in the present application.
Fig. 3 is a schematic cross-sectional view of the display panel of fig. 1 taken along line a-a'.
Fig. 4 is a schematic cross-sectional view of another display panel provided in the present application, taken along line a-a'.
Fig. 5 is a schematic structural diagram of a light-transmitting display region of a display panel provided in the present application.
Fig. 6 is an equivalent circuit diagram of a light-emitting functional layer driving circuit of a display panel provided in the present application.
Fig. 7 is a flowchart of a method for manufacturing a display panel according to the present application.
Fig. 8 is a schematic structural diagram of a display device provided in the present application.
Detailed Description
The following description of the various embodiments refers to the accompanying drawings, which are included to illustrate specific embodiments that can be implemented by the application. The use of ordinal numbers such as [ first ], [ second ], [ third ], [ fourth ], etc. in the present application does not denote any order, quantity, or importance, but rather the terms "first", "second", "third", "fourth", etc. are used to distinguish one element from another. References to [ upper ], [ lower ], [ left ], [ right ], etc. in this application are made only to the directions of the attached drawings. Accordingly, the directional terminology is used for purposes of illustration and understanding, and is in no way limiting. In the drawings, elements having similar structures are denoted by the same reference numerals.
The present application will be described in detail with reference to specific examples. See fig. 1-3. Fig. 1 is a schematic structural diagram of a display panel provided in the present application. Fig. 2 is a schematic structural diagram of another display panel provided in the present application. Fig. 3 is a schematic cross-sectional view of the display panel of fig. 1 taken along line a-a'.
The display panel 100 may be an Active matrix organic light-emitting diode (AMOLED) display panel or a Passive matrix organic light-emitting diode (PMOLED) display panel, which is not particularly limited in this application.
The display panel 100 includes a display region 100a and a light-transmissive display region 100b disposed adjacent to the display region 100 a. The display area 100a may be a main display area. The light-transmitting display area 100b is used for disposing a photosensitive element such as a camera or a photosensor thereunder. The light-transmissive display region 100b displays a complete image in cooperation with the display region 100a when displayed. When the photosensitive element operates, the light-transmitting display region 100b does not display an image, and becomes a light-transmitting state. The external light can be emitted to the photosensitive element through the transparent display area 100b to realize the function thereof. To perform the function of the photosensitive element, in one embodiment, the pixel cell density of the display area 100a is greater than the pixel cell density of the light-transmissive display area 100b to perform the function of the photosensitive element.
In some embodiments, referring to fig. 1 and 2, the display region 100a surrounds the light transmissive display region 100 b. The display area 100a occupies most of the area of the display panel 100. The light-transmissive display region 100b occupies a small area of the display panel 100. The number and shape of the light-transmissive display regions 100b are not limited in the present application. The number of the light-transmissive display regions 100b may be one or more. The shape of the light-transmissive display region 100b may be a circle, an ellipse, a square, or an irregular figure.
In one embodiment, referring to fig. 3, the display panel 100 includes a substrate 101. The substrate 101 may be formed of a flexible transparent material such as Polyimide (PI) or Polysulfone (PSF). A first light emission functional layer 102 and a second light emission functional layer 103 disposed over the substrate 101. The first light-emitting function layer 102 has a first cathode layer 1022, and the second light-emitting function layer 103 has a second cathode layer 1032. The first cathode layer 1022 and the second cathode layer 1032 have the separation grooves 104 therebetween. The separation grooves 104 may be obtained by a laser cutting method. The first drive signal is input through the first cathode layer 1022, and the second drive signal is input through the second cathode layer 1032. On the premise that the display area 100a and the light-transmitting display area 100b have the same brightness, the power consumption of the screen is reduced.
In one embodiment, referring to fig. 3, the first cathode layer 1022 is disposed in the same layer as the second cathode layer 1032. The first cathode layer 1022 and the second cathode layer 1032 have the separation grooves 104 therebetween. The first drive signal is input through the first cathode layer 1022, and the second drive signal is input through the second cathode layer 1032. On the premise that the display area 100a and the light-transmitting display area 100b have the same brightness, the power consumption of the screen is reduced. In addition, the first cathode layer 1022 and the second cathode layer 1032 are prepared in the same process, so that the preparation process flow can be simplified.
In one embodiment, referring to fig. 4, a separation groove 104 is disposed between the first cathode layer 1022 and the second cathode layer 1032. The separation grooves 104 are filled with a transparent insulating material 116. The first cathode layer 1022 is insulated from the second cathode layer 1032 by the transparent insulating material 116. The transparent insulating material 116 may be formed of an epoxy, acrylate, or urethane acrylate organic transparent material.
In one embodiment, referring to fig. 3 and 4, the display panel 100 further includes a buffer layer 117, the buffer layer 117 being located above the substrate 101; a first thin film transistor 105 disposed over the buffer layer 117 and a second thin film transistor 106 disposed adjacent to the first thin film transistor 105; the first thin film transistor 105 is electrically connected to the first light-emitting function layer 102; the second thin film transistor 106 is located between the display region 100a and the light-transmitting display region 100 b; the second thin film transistor 106 is electrically connected to the second light-emitting function layer 103.
The second thin film transistor 106 is located between the display area 100a and the transparent display area 100b, so that the influence of the second thin film transistor 106 on the transparency of the transparent display area 100b can be eliminated.
The first thin-film transistor layer includes a plurality of first thin-film transistors 105. The first thin film transistor layer includes an active layer 1051, a first insulating layer 1052, a first metal wiring layer 1053, a second insulating layer 1054, a second metal wiring layer 1055, a third insulating layer 1056, a third metal wiring layer 1057, and a planarization layer 1058.
Specifically, the active layer 1051 is disposed over the buffer layer 117. The active layer 1051 includes a channel region in the middle and source and drain regions at both ends of the channel region. The first insulating layer 1052 covers the active layer 1051. A first metal wiring layer 1053 is provided over the first insulating layer 1052. The first metal wiring layer 1053 includes a first gate electrode. The second insulating layer 1054 covers the first metal line layer 1053. A second metal wiring layer 1055 is disposed over the second insulating layer 1054. The second metal wiring layer 1055 includes a second gate electrode. The third insulating layer 1056 covers the second metal line layer 1055. A third metal wiring layer 1057 is disposed over the third insulating layer 1056. The third metal wiring layer 1057 includes a source electrode and a drain electrode. The planarization layer 1058 covers the third metal wiring layer 1057.
A first via hole 114 is provided in the second insulating layer 1054 and the third insulating layer 1056. Specifically, the source electrode and the drain electrode are electrically connected to the active layer 1051 through first via holes 114, respectively. Specifically, the source electrode is electrically connected to the source region of the active layer 1051. The drain electrode is electrically connected to the drain region of the active layer 1051. The flat layer 1058 is provided with a second through hole 111 and a third through hole 112. Specifically, the second via hole 111 is used to electrically connect the first thin film transistor 105 and the first light-emitting function layer 102; the third via 112 is used to electrically connect the second thin film transistor 106 and the second light-emitting functional layer 103.
The buffer layer 117 may be formed of an inorganic material such as silicon nitride or silicon oxide. The active layer 1051 may be formed of an amorphous silicon layer, a silicon oxide layer, or a low temperature polysilicon semiconductor layer. The first insulating layer 1052 may be formed of silicon oxide, silicon nitride, or other insulating inorganic materials. The first metal line layer 1053 may be formed of molybdenum (Mo). The second insulating layer 1054 may be formed of silicon oxide, silicon nitride, or other insulating inorganic material, and the second metal wiring layer 1055 may be formed of molybdenum. The third insulating layer 1056 may be formed of silicon oxide, silicon nitride, or other insulating inorganic material. The third metal line layer 1057 may be formed of titanium (Ti) or aluminum (Al) metal. The planarization layer 1058 may be formed of a transparent organic material.
In one embodiment, referring to fig. 3 and 4, the display panel 100 further includes a second cathode connection part 107 for electrically connecting the second cathode layer 1022. The second cathode connection portion 107 is disposed in the same layer as the source/drain metal layers of the first thin film transistor 105 and the second thin film transistor 106.
The second light emitting function layer 103 further includes a light emitting layer 115 and a pixel defining layer 113 covering the light emitting layer 115. A fourth through hole 108 is opened in the pixel defining layer 113 of the second light emitting function layer 103 and the planarization layer 1058 of the second thin film transistor. The second cathode layer 1032 extends to the fourth through hole 108 and is connected to the second cathode connecting portion 107. The fourth through hole 108 is disposed adjacent to the separation groove 104, as shown in fig. 5. The fourth through-hole 108 includes a first sub through-hole 1081 and a second sub through-hole 1082 communicating with each other. Specifically, the first sub-via 1081 opens in the planarization layer 1058. The second sub-via 1082 is opened in the pixel defining layer 113. The second cathode layer 1032 is connected to the second cathode connection 107 through the fourth through hole 108. The second cathode connection portion 107 and the source and drain metal layers of the first thin film transistor 105 and the second thin film transistor 106 are arranged in the same layer, so that the manufacturing process flow can be simplified. The fourth through hole 108 is disposed adjacent to the separation groove 104, so that the influence of the fourth through hole 108 on the light transmittance of the light-transmitting display region 100b can be eliminated.
In one embodiment, referring to fig. 3 and 4, the first light emitting function layer 102 further includes a first anode layer 1021, and the first anode layer 1021 is located at a side of the first cathode layer 1022 close to the substrate 101. The second light emitting function layer 103 further includes a second anode layer 1031, and the second anode layer 1031 is located on the side of the second cathode layer 1032 close to the substrate 101. The second anode layer 1031 has an area smaller than that of the first anode layer 1021. The first anode layer 1021 is electrically connected to the first thin film transistor 105 through the second via 111.
The area of the second anode layer 1031 is smaller than that of the first anode layer 1021, so that the light-transmitting effect of the light-transmitting display region 100b can be improved.
In one embodiment, referring to fig. 3 and 4, a metal layer 109 for electrically connecting the second anode layer 1031 and the second thin film transistor 106 is further disposed between the second anode layer 1031 and the second thin film transistor 106. The transmittance of the metal layer 109 in the visible light region is greater than 80%. Specifically, the second anode 1021 layer is electrically connected to the second thin film transistor 106 through the metal layer 109 extending to the third via 112.
The metal layer 109 for electrically connecting the second anode layer 1031 and the second thin film transistor 106 has a transmittance in a visible light region of more than 80%, so that the light transmittance of the light-transmitting display region can be improved.
In one embodiment, referring to fig. 3 and 4, the display panel 100 further includes an encapsulation layer 110. The encapsulation layer 110 is located above the first light emitting functional layer 102 and the second light emitting functional layer 103. The encapsulation layer 110 may prevent external air or moisture from intruding into the display panel 100.
Correspondingly, the application also provides an equivalent circuit diagram of the light-emitting functional layer driving circuit of the display panel. Referring to fig. 6, the light emitting function layer driving circuit includes: a first light emitting function layer driving circuit 601 which controls the first light emitting function layer 102 and a second light emitting function layer driving circuit 602 which controls the second light emitting function layer 103.
Specifically, the first light-emitting functional layer drive circuit 601 includes the first thin film transistor 105, the first light-emitting functional layer 102, and the first cathode drive circuit 6011. The second light-emitting function layer control circuit 602 includes the second thin film transistor 106, the second light-emitting function layer 103, and the second cathode driver circuit 6021.
The first thin film transistor 105 is electrically connected to the first anode layer 1021 of the first light emitting function layer 102. The first cathode driver circuit 6011 is electrically connected to the first cathode layer 1022 of the first light-emitting functional layer 102. The second thin film transistor 106 is electrically connected to the second anode layer 1032 of the second light emitting function layer 103. The second cathode driver circuit 6021 is electrically connected to the second cathode layer 1032 of the second light-emitting functional layer 103. First cathode layer 1022 is electrically insulated from second cathode layer 1032. The first cathode driver circuit 6011 is used to supply a first cathode voltage to the first cathode layer 1022, and the second cathode driver circuit 6021 is used to supply a second cathode voltage to the second cathode layer 1032. The first cathode voltage is different from the second cathode voltage. Therefore, the problem of screen power consumption increase caused by the fact that the brightness of the display area 100a is consistent with that of the light-transmitting display area 100b is solved.
The application also provides a manufacturing method of the display panel. Referring to fig. 7, the method includes:
s701: a substrate is provided.
Alternatively, a flexible substrate is provided, which may be formed of a flexible transparent material such as Polyimide (PI) or Polysulfone (PSF).
S702: and arranging a first light-emitting functional layer on the substrate, wherein the first light-emitting functional layer corresponds to a display area of the display panel and is provided with a first cathode layer.
S703: and arranging a second light-emitting functional layer on the substrate, wherein the second light-emitting functional layer corresponds to the light-transmitting display area of the display panel, and the second light-emitting functional layer is provided with a second cathode layer.
S704: and a separation groove is arranged between the first cathode layer and the second cathode layer, a first driving signal is input through the first cathode layer, a second driving signal is input through the second cathode layer, and the first driving signal and the second driving signal are different.
In one embodiment, between steps S702 and S703, the following steps are further included: a buffer layer 117 is formed on the substrate 101. A first thin film transistor 105 and a second thin film transistor 106 disposed adjacent to the first thin film transistor 105 are formed on the buffer layer 117.
In one embodiment, after step S704, the following steps are further included: the separation grooves 104 are filled with an organic insulating material 116.
By providing a manufacturing method of the display panel, the power consumption of the screen is reduced on the premise that the brightness of the display area 100a is the same as that of the light-transmitting display area 100 b.
The present application also provides a display device, see fig. 8, comprising the display panel 100 as described above.
When the display panel 100 of the present application is used in the display device 1000, the screen power consumption is reduced on the premise that the display area 100a and the transparent display area 100b have the same brightness.
In summary, although the present application has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present application, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present application, so that the scope of the present application shall be determined by the appended claims.
Claims (10)
1. A display panel, the display panel having a display region and a light-transmissive display region, the display region and the light-transmissive display region being adjacently disposed, the display panel comprising:
a substrate;
the first light-emitting functional layer is arranged on the substrate and corresponds to the display area, and the first light-emitting functional layer is provided with a first cathode layer;
the second light-emitting functional layer is arranged on the substrate and corresponds to the light-transmitting display area, and the second light-emitting functional layer is provided with a second cathode layer;
wherein a separation groove is provided between the first cathode layer and the second cathode layer, a first drive signal is input through the first cathode layer, a second drive signal is input through the second cathode layer, and the first drive signal and the second drive signal are different.
2. The display panel of claim 1, wherein the first cathode layer and the second cathode layer are disposed on a same layer.
3. The display panel according to claim 1, further comprising a first thin film transistor and a second thin film transistor provided adjacent to the first thin film transistor, wherein the first thin film transistor is electrically connected to the first light-emitting function layer, wherein the second thin film transistor is provided between the display region and the light-transmitting display region, and wherein the second thin film transistor is electrically connected to the second light-emitting function layer.
4. The display panel according to claim 3, further comprising a second cathode connection portion for electrically connecting the second cathode layer, wherein the second cathode connection portion is disposed on the same layer as the source/drain metal layers of the first thin film transistor and the second thin film transistor, a through hole is formed in the pixel defining layer of the second light-emitting function layer and the planarization layer of the second thin film transistor, and the second cathode layer extends to the through hole and is connected to the second cathode connection portion.
5. The display panel according to claim 4, wherein the through hole is provided adjacent to the separation groove.
6. The display panel of claim 3, wherein the first light emitting function layer further comprises a first anode layer on a side of the first cathode layer adjacent to the substrate, wherein the second light emitting function layer further comprises a second anode layer on a side of the second cathode layer adjacent to the substrate, and wherein an area of the second anode layer is smaller than an area of the first anode layer.
7. The display panel according to claim 6, wherein a metal layer for electrically connecting the second anode layer and the second thin film transistor is further disposed between the second anode layer and the second thin film transistor, and the metal layer has a transmittance in a visible light region of more than 80%.
8. The display panel according to claim 1, wherein the first drive signal is used to supply a first cathode voltage to the first cathode layer, wherein the second drive signal is used to supply a second cathode voltage to the second cathode layer, and wherein the first cathode voltage is different from the second cathode voltage.
9. A method for manufacturing a display panel is characterized by comprising the following steps:
providing a substrate;
arranging a first light-emitting functional layer on the substrate, wherein the first light-emitting functional layer corresponds to a display area of the display panel and is provided with a first cathode layer;
arranging a second light-emitting functional layer on the substrate, wherein the second light-emitting functional layer corresponds to the light-transmitting display area of the display panel and is provided with a second cathode layer;
and a separation groove is arranged between the first cathode layer and the second cathode layer, a first driving signal is input through the first cathode layer, a second driving signal is input through the second cathode layer, and the first driving signal and the second driving signal are different.
10. A display device characterized by comprising the display panel according to any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110008489.7A CN112750965A (en) | 2021-01-05 | 2021-01-05 | Display panel, manufacturing method of display panel and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110008489.7A CN112750965A (en) | 2021-01-05 | 2021-01-05 | Display panel, manufacturing method of display panel and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112750965A true CN112750965A (en) | 2021-05-04 |
Family
ID=75649888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110008489.7A Pending CN112750965A (en) | 2021-01-05 | 2021-01-05 | Display panel, manufacturing method of display panel and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112750965A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114203785A (en) * | 2021-12-10 | 2022-03-18 | 武汉华星光电半导体显示技术有限公司 | OLED display panel |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109801950A (en) * | 2019-01-31 | 2019-05-24 | 厦门天马微电子有限公司 | The production method of display panel, display device and display panel |
| CN109872670A (en) * | 2017-12-05 | 2019-06-11 | 京东方科技集团股份有限公司 | Display screen, display device, display circuit and its luminance compensation method |
| CN110098238A (en) * | 2019-05-15 | 2019-08-06 | 武汉华星光电半导体显示技术有限公司 | Display panel |
| CN110112184A (en) * | 2019-04-17 | 2019-08-09 | 武汉华星光电半导体显示技术有限公司 | Display panel and electronic equipment |
| CN110492018A (en) * | 2019-08-09 | 2019-11-22 | 武汉华星光电半导体显示技术有限公司 | A kind of display device |
| CN110718190A (en) * | 2019-11-15 | 2020-01-21 | Oppo广东移动通信有限公司 | Voltage adjusting method, pixel circuit and electronic equipment |
| CN111029381A (en) * | 2019-12-09 | 2020-04-17 | 武汉华星光电半导体显示技术有限公司 | Organic light emitting display panel and organic light emitting display device |
| CN111584591A (en) * | 2020-05-22 | 2020-08-25 | 京东方科技集团股份有限公司 | Display panel, driving method and display device |
| CN111584759A (en) * | 2020-05-28 | 2020-08-25 | 昆山国显光电有限公司 | Display panel and display device |
| CN111725266A (en) * | 2020-06-01 | 2020-09-29 | 武汉华星光电半导体显示技术有限公司 | Display panel, display device and manufacturing method of display panel |
| CN111833720A (en) * | 2020-01-13 | 2020-10-27 | 昆山国显光电有限公司 | Display panel and display device |
-
2021
- 2021-01-05 CN CN202110008489.7A patent/CN112750965A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109872670A (en) * | 2017-12-05 | 2019-06-11 | 京东方科技集团股份有限公司 | Display screen, display device, display circuit and its luminance compensation method |
| CN109801950A (en) * | 2019-01-31 | 2019-05-24 | 厦门天马微电子有限公司 | The production method of display panel, display device and display panel |
| CN110112184A (en) * | 2019-04-17 | 2019-08-09 | 武汉华星光电半导体显示技术有限公司 | Display panel and electronic equipment |
| CN110098238A (en) * | 2019-05-15 | 2019-08-06 | 武汉华星光电半导体显示技术有限公司 | Display panel |
| CN110492018A (en) * | 2019-08-09 | 2019-11-22 | 武汉华星光电半导体显示技术有限公司 | A kind of display device |
| CN110718190A (en) * | 2019-11-15 | 2020-01-21 | Oppo广东移动通信有限公司 | Voltage adjusting method, pixel circuit and electronic equipment |
| CN111029381A (en) * | 2019-12-09 | 2020-04-17 | 武汉华星光电半导体显示技术有限公司 | Organic light emitting display panel and organic light emitting display device |
| CN111833720A (en) * | 2020-01-13 | 2020-10-27 | 昆山国显光电有限公司 | Display panel and display device |
| CN111584591A (en) * | 2020-05-22 | 2020-08-25 | 京东方科技集团股份有限公司 | Display panel, driving method and display device |
| CN111584759A (en) * | 2020-05-28 | 2020-08-25 | 昆山国显光电有限公司 | Display panel and display device |
| CN111725266A (en) * | 2020-06-01 | 2020-09-29 | 武汉华星光电半导体显示技术有限公司 | Display panel, display device and manufacturing method of display panel |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114203785A (en) * | 2021-12-10 | 2022-03-18 | 武汉华星光电半导体显示技术有限公司 | OLED display panel |
| WO2023103101A1 (en) * | 2021-12-10 | 2023-06-15 | 武汉华星光电半导体显示技术有限公司 | Oled display panel and display apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109801950B (en) | Display panel, display device and manufacturing method of display panel | |
| CN108269835B (en) | Display substrate, manufacturing method thereof and display device | |
| US11069756B2 (en) | Display panel, display device and method for driving display panel | |
| KR100834346B1 (en) | an active matrix organic electroluminescence display device | |
| JP6935055B2 (en) | OLED display device, its circuit, and its manufacturing method | |
| WO2020093692A1 (en) | Display screen and display device integrated with same, and cover plate | |
| KR100741968B1 (en) | Organic light emitting display device and fabricating method of the same | |
| KR101967600B1 (en) | Flexible organic electroluminescent device and method for fabricating the same | |
| KR101781506B1 (en) | Array substrate for organic electro luminescent device | |
| CN111509136A (en) | O L ED display panel | |
| CN110047874B (en) | Display device | |
| US20230099140A1 (en) | Color filter substrate and display panel | |
| CN108364993B (en) | Display panel manufacturing method, display panel and display device | |
| CN110729328B (en) | Organic light emitting diode display panel and organic light emitting diode display device | |
| JP2003332072A (en) | Organic el light emitting display device | |
| US11574985B2 (en) | Organic light-emitting diode display device and method of manufacturing same | |
| CN111180492A (en) | Array substrate, manufacturing method thereof and double-sided display device | |
| CN112750965A (en) | Display panel, manufacturing method of display panel and display device | |
| WO2019186899A1 (en) | Display device | |
| KR101331800B1 (en) | Organic electro luminescence display device | |
| CN110910829B (en) | OLED pixel structure and OLED display panel | |
| JP2004184530A (en) | Electro-optical device, active matrix substrate, and electronic apparatus | |
| WO2021064954A1 (en) | Display device | |
| US20230209901A1 (en) | Display panel | |
| US20240147775A1 (en) | Light emitting display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210504 |
|
| RJ01 | Rejection of invention patent application after publication |