CN112750681A - Ion trap system and ion control method - Google Patents
Ion trap system and ion control method Download PDFInfo
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- CN112750681A CN112750681A CN201911039236.5A CN201911039236A CN112750681A CN 112750681 A CN112750681 A CN 112750681A CN 201911039236 A CN201911039236 A CN 201911039236A CN 112750681 A CN112750681 A CN 112750681A
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Abstract
An ion trap system and an ion control method are used for solving the problem that the number of ions which can be imprisoned by the ion trap system in the prior art is small. The ion trap system comprises a processing control module, a beam splitting module, a light beam regulating and controlling module and an ion trapping module, wherein the ion trapping module comprises P trapped ions and electrodes. The electrode is used for trapping the P ions in the M first partitions according to a first control signal generated by the processing control module according to the arrangement of the P ions; the beam splitting module is used for splitting the laser beam according to a second control signal generated by the processing control module according to the P ion arrangements and the maximum ion number which needs to be controlled simultaneously in each second partition to obtain N first light beams, dividing the N first light beams into M second partitions, and respectively transmitting the first light beams in the M second partitions to the M light beam regulating and controlling modules; the light beam regulating and controlling module is used for modulating the received first light beam and transmitting the modulated first light beam to corresponding ions of the corresponding first partition.
Description
Technical Field
The application relates to the technical field of quantum computing, in particular to an ion trap system and an ion control method.
Background
With the development of information technology, quantum technology is receiving more and more attention. The basic principle of quantum computing is to encode information using qubits (e.g., ions). Single qubitNot only the two classical states of 0 and 1, but also the superposition state of 0 and 1, and n qubits can be simultaneously in 2nA superposition of individual quantum states. Quantum computing has been constantly attempted in algorithmic software and hardware systems.
In the aspect of hardware systems for quantum computing, the mainstream practical solutions at present include an ion trap system and a superconducting system. Wherein the ion trap system is for example a 5-qubit fully programmable ion trap system, and the superconducting system is for example a 20-qubit online superconducting quantum computing cloud service. The ion trap system comprises an electrode structure for trapping ions and the ions, and the ions can be fixed in a specific structure in a space by applying a specific electromagnetic field signal (also called trapping electromagnetic field signal) on the electrode structure and combining coulomb effect between the ions. And then, the ions fixed in a specific structure are hit by laser, so that the quantum state control of the ions can be realized.
At present, quantum computing is increasingly applied to various fields such as physics, chemistry, and biology. To meet the requirements of these applications, quantum state manipulation needs to be performed on more qubits to construct quantum computations for large-scale qubits. However, in the prior art, a beam of laser is split by the beam splitter according to the number of ions trapped in the ion trapping module and then irradiated onto all trapped ions, so as to control the ions respectively. For example, 100 ions are trapped in the ion trapping module, and the beam splitter divides one laser beam emitted by the laser into 100 light beams and irradiates the 100 corresponding ions respectively. However, as the number of quantum bits increases, the maximum emission power of the laser is limited, and thus, when a laser beam is divided into a plurality of beams, the problem of insufficient laser power occurs.
Disclosure of Invention
The application provides an ion trap system and an ion control method, which are used for solving the problem that the number of ions which can be imprisoned by the ion trap system in the prior art is small.
In a first aspect, the present application provides an ion trap system, which may include a process control module, a beam splitting module, M beam conditioning modules, and an ion trapping module, where the ion trapping module includes P trapped ions and electrodes, where M is an integer greater than 1, and P is an integer greater than M. In the ion trap system, the electrode is used for trapping P ions in M first partitions of the ion trapping module according to a first control signal generated by the processing control module according to the arrangement of the P ions, wherein the M first partitions correspond to the M light beam regulating and controlling modules one by one; the beam splitting module is used for splitting a laser beam from the laser according to a second control signal generated by the processing control module according to the arrangement of the P ions and the maximum number of ions to be simultaneously controlled in each second partition to obtain N first light beams, dividing the N first light beams into M second partitions, and respectively transmitting the first light beams in the M second partitions to the M light beam regulating and controlling modules, wherein the M light beam regulating and controlling modules correspond to the M second partitions one to one, and N is an integer larger than M; the light beam regulation and control module is used for receiving the first light beam from the corresponding second subarea, modulating the received first light beam and transmitting the modulated first light beam to the corresponding ions in the corresponding first subarea.
Based on the scheme, the beam splitting module can split the laser beam from the laser into N first beams according to the maximum number of ions which need to be simultaneously controlled. So, the ion number of imprisoning when ion imprisoning module imprisoning is more, but the ion number that needs control simultaneously is less, helps reducing the quantity of the first light beam that needs to can be applicable to the ion trap system of imprisoning more ion under the certain circumstances of laser quantity. Alternatively, it can be understood that the ion trap system can trap a larger number of ions for a given number of lasers. Furthermore, the N first light beams are divided into M second partitions based on the maximum number of ions that need to be simultaneously manipulated in each first partition, that is, the number of the first light beams in each second partition is determined according to the maximum number of ions that need to be simultaneously manipulated in the corresponding first partition, so that independent manipulation of ions in each first partition can be realized, and further expansion of the ion trap system is facilitated.
In one possible implementation, the beam steering module includes a modulator and a path selection structure. The modulator is used for receiving the first light beam from the corresponding second partition, loading control information on the received first light beam according to a third control signal to obtain a modulated first light beam, and transmitting the modulated first light beam to the corresponding path selection structure, wherein the third control signal is generated by the processing control module according to the control information of the first light beam in the corresponding second partition. The path selection structure is used for adjusting a transmission path of the modulated first light beam according to a fourth control signal, so that the modulated first light beam is transmitted to corresponding ions in the corresponding first partition, wherein the fourth control signal is generated by the processing control module according to a voltage signal and a path control time sequence when the path selection structure selects different transmission paths for the first light beam.
The first light beam loading control information in the second subarea can be realized through the modulator; alignment of the first beam in the second zone with the corresponding ions in the first zone may be achieved by the path selection structure.
In one possible implementation, the path selection structure comprises a micro-electromechanical system (MEMS) mirror, or an optical switch.
Further, optionally, the modulator may be further configured to control on or off of the optical path of the first light beam in the corresponding second partition according to a third control signal.
In one possible implementation, the electrode is further configured to control one or more of the P ions to move according to a first control signal.
To minimize the cross talk problem between beams caused by the integrated multi-channel AOM, the modulator can be a single channel modulator.
In a second aspect, the present application provides a method of ion manipulation, the method comprising: generating a first control signal according to the arrangement of the P ions, and confining the P ions to M first subareas according to the first control signal, wherein M is an integer larger than 1, and P is an integer larger than M; generating a second control signal according to the arrangement of the P ions and the maximum number of ions which need to be controlled simultaneously in each second division, splitting the laser beam according to the second control signal to obtain N first light beams, and dividing the N first light beams into M second partitions, wherein N is an integer greater than M; respectively modulating the first light beams in the M second subareas to obtain modulated first light beams; and finally, respectively transmitting the modulated first light beams in the M second partitions to corresponding ions in the M first partitions, wherein the M second partitions correspond to the M first partitions one to one.
Based on the scheme, the laser beam can be divided into N first beams according to the maximum number of ions which need to be simultaneously controlled. Thus, when the number of trapped ions is large, but the number of ions to be simultaneously manipulated is small, the number of first beams can be reduced by this scheme. That is, based on this scheme, it is helpful to increase the number of trapped ions. Further, the N first light beams are divided into M second partitions based on the maximum number of ions that need to be simultaneously manipulated in each first partition, that is, the number of the first light beams in each second partition is determined according to the maximum number of ions that need to be simultaneously manipulated in the corresponding first partition, so that independent manipulation of ions in each first partition can be achieved.
In a possible implementation manner, the first light beam in each second partition may be loaded with the manipulation information according to a third control signal, so as to obtain the modulated first light beam, where the third control signal is generated according to the manipulation information of the first light beam in the second partition.
In a possible implementation manner, the transmission path of the modulated first light beam may be adjusted according to a fourth control signal, so that the modulated first light beam is transmitted to the corresponding ion in the corresponding first partition, and the fourth control signal is generated according to the voltage signal and the path control timing sequence when different transmission paths are selected for the first light beam.
Drawings
Fig. 1 is a schematic diagram of an ion trap system according to the present application;
FIG. 2 is a schematic structural diagram of an ion trapping module according to the present application;
FIG. 3a is a schematic view of an ion arrangement provided herein;
FIG. 3b is a schematic view of another ion arrangement provided herein;
fig. 4 is a schematic structural diagram of a light beam adjustment module provided in the present application;
fig. 5 is a relationship between a switching timing of a modulator, a switching timing of a path selection structure selecting a first light beam transmission path, and a switching timing of a shutting operation provided in the present application;
fig. 6 is a relationship between a switching timing of another modulator, a switching timing of a path selection structure selecting a first light beam transmission path, and a switching timing of a shutting operation provided in the present application;
FIG. 7 is a flow chart of a process control module controlling the switching timing of the modulator, and a path selection structure adjusting the switching timing of the transmission path of the first light beam and the switching timing of the electrodes according to the present application;
figure 8a is a schematic diagram of another ion trap system architecture provided herein;
fig. 8b is a schematic diagram of another ion trap system architecture provided herein;
Fig. 9 is a schematic method flow diagram of an ion manipulation method according to the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more clear, the present application will be further described in detail with reference to the accompanying drawings.
Hereinafter, some terms in the present application are explained to facilitate understanding by those skilled in the art.
1) Micro electro-mechanical system (MEMS) mirrors are micro mirrors etched in a silicon wafer. The movable micro mirror can be lifted, rotated or moved based on thermoelectric principle, magnetoelectric principle and electrostatic principle (such as action of electrostatic force or electromagnetic force), and the propagation direction of input light can be independently selected, so that the function of selecting or switching on or off the light path of the input light can be realized.
2) The optical switch is an optical path switching device. That is, an optical device having one or more optional transmission ports (e.g., an input port and an output port), which can convert or logically manipulate optical signals in an optical transmission line or an integrated optical circuit. The number of the input ports and the number of the output ports of the optical switch can be divided into 1 × 1, 1 × 2, 1 × n, 2 × 2, 2 × n, m × n, and the like, m and n are positive integers, the number before "x" indicates the number of the input ports, and the number after "x" indicates the number of the output ports.
The optical switch may be, for example, a two-dimensional MEMS optical switch or a three-dimensional MEMS optical switch. The two-dimensional MEMS optical switch implementation principle is as follows: the two-dimensional MEMS optical switch consists of a two-dimensional micro mirror array, and for the light switch array of m multiplied by n, m multiplied by n micro mirrors are arranged on a plane of the optical switch. The light beam is transmitted in two-dimensional space, and each micro mirror has only two states of on (/00 state) and off (/01 state). The optical switch is respectively connected with the input optical fiber group and the output optical fiber group. When the micro-mirrors (i, j) are controlled to be in/01 state, the optical signal input by the ith optical fiber is reflected and then output by the jth optical fiber, and the optical path selection is realized. When the micromirrors (i, 1), (i, 2) …. (i, N) are controlled to be in the/00 state, all the micromirrors associated with the input fiber i are fully turned on, and the optical signal input from the ith fiber is directly output from the opposite fiber. The two-dimensional MEMS optical switch can receive simple digital signal control, and generally only needs to provide enough driving voltage to enable the micro-mirror to rotate.
The ion trap system proposed in the present application will be specifically explained with reference to fig. 1 to 8 b.
Fig. 1 is a schematic diagram of an ion trap system according to the present application. The ion trap system comprises a processing control module, a beam splitting module, M light beam regulating and controlling modules and an ion trapping module. The ion trapping module includes P ions trapped and an electrode. The electrode is used for confining P ions to M first partitions of the ion confining module according to a first control signal, the M first partitions correspond to the M light beam regulating and controlling modules one by one, the first control signal is determined by the processing control module according to the arrangement of the P ions, M is an integer larger than 1, and P is an integer larger than M. The beam splitting module is used for splitting a laser beam from the laser according to a second control signal to obtain N first light beams, dividing the N first light beams into M second partitions, and respectively transmitting the first light beams in the M second partitions to the M light beam regulating and controlling modules, wherein the M light beam regulating and controlling modules correspond to the M second partitions one to one, the second control signal is determined by the processing control module according to the arrangement of P ions and the maximum number of ions needing to be simultaneously controlled in each second partition, M is an integer larger than 1, and N is an integer larger than M. And the light beam regulating and controlling module is used for receiving the first light beam from the corresponding second subarea, modulating the received first light beam and transmitting the modulated first light beam to the corresponding ions in the corresponding first subarea.
Based on the scheme, the beam splitting module can split the laser beam from the laser into N first beams according to the maximum number of ions which need to be simultaneously controlled. So, the ion number of imprisoning when ion imprisoning module imprisoning is more, but the ion number that needs control simultaneously is less, helps reducing the quantity of first light beam to can be under the certain circumstances of laser quantity, be applicable to the ion trap system of imprisoning more ion. Furthermore, the N first light beams are divided into M second partitions based on the maximum number of ions that need to be simultaneously manipulated in each first partition, that is, the number of the first light beams in each second partition is determined according to the maximum number of ions that need to be simultaneously manipulated in the corresponding first partition, so that independent manipulation of ions in each first partition can be realized, and further expansion of the ion trap system is facilitated.
The functional blocks shown in fig. 1 are described separately below to give an exemplary implementation.
Laser
In the present application, the laser is used for outputting laser light, and may be continuous laser light or pulse laser light. That is, the laser in the present application may be a laser that outputs continuous laser light or a laser that outputs pulsed laser light. The laser may be a part of the ion trap system, or may be a laser externally connected to the ion trap system, which is not limited in this application. Further, the number of the lasers is not limited in the application.
Second, process the control module
And the processing control module can be used for generating a second control signal and a first control signal according to a quantum algorithm executed by the ion trap system. The second control signal is used for controlling the beam splitting module to split the laser beam from the laser into N first beams and divide the N first beams into M second partitions. Further, the second control signal may also be used to control the number of first light beams included in each second partition. The first control signal is used to control the electrode to trap the P ions into the M first partitions.
In this application, when the ion trap system is used to execute a certain quantum algorithm, it is necessary to execute several steps of quantum manipulation, the number of ions to be trapped, the maximum number of ions to be simultaneously manipulated, the arrangement mode of the ions, and the maximum number of ions to be simultaneously manipulated in each first partition. It should be noted that the number of the first beams included in each second partition can be determined by the maximum number of ions that need to be manipulated simultaneously corresponding to the quantum algorithm, and generally, the number of the first beams in the second partition is smaller than the trapped number of ions in the first partition. The number of first light beams included in each second division may be the same or different. For example, the number of trapped ions required to perform quantum algorithm a is 20, and the maximum number of ions required to be simultaneously manipulated is 16, that is, the number of ions required to be simultaneously manipulated in performing quantum algorithm a can be controlled in two steps, the first step is required to simultaneously manipulate 16 ions, and the second step is required to simultaneously manipulate 4 ions. The trapped 20 ions can be divided into 4 first partitions, the number of ions included in the 4 first partitions is 5, 3, 4 and 8, respectively, the maximum number of ions required to be simultaneously manipulated in the first partitions including 5 ions is 3, the maximum number of ions required to be simultaneously manipulated in the first partitions including 3 ions is 2, the maximum number of ions required to be simultaneously manipulated in the first partitions including 4 ions is 4, and the maximum number of ions required to be simultaneously manipulated in the first partitions including 8 ions is 7.
When the ion trap system is used for executing the quantum algorithm a, the processing control module may generate a first control signal according to the arrangement mode of 20 ions, where the first control signal is used to control the electrode to trap 20 ions, and the 20 ions are arranged to 4 first partitions, and the number of ions trapped by the 4 first partitions is 5, 3, 4, and 8, respectively. The processing control module may further generate a second control signal according to the 20 ion arrangements and the maximum number of ions that each first partition needs to be simultaneously manipulated, where the second control signal is used to control the beam splitting module to split the laser beam from the laser into 16 first beams (the maximum number of ions that needs to be simultaneously manipulated is 16), and divide the 16 first beams into 4 second partitions according to the maximum number of ions that each first partition needs to be simultaneously manipulated, where the 4 second partitions include 3, 2, 4, and 7 first beams, respectively.
In this application, the processing control module may include a processing unit and a control unit, and the processing unit may be a general-purpose processor, a Field Programmable Gate Array (FPGA), a signal data processing (DSP) circuit, an Application Specific Integrated Circuit (ASIC), or other programmable logic devices. The control unit may comprise a drive of the modulator for controlling the modulator, a drive of the laser for controlling the laser, a drive of the routing structure for controlling the routing structure, etc. It should be noted that these drivers may be integrated or separated.
Third, beam splitting module
In this application, the beam splitting module is used for splitting the laser beam from the laser according to the second control signal, obtains N first light beams, divides N first light beams into M second subareas. For example, the ion trap system is configured to perform quantum algorithm a, and the beam splitting module may split the laser beam from the laser into 16 first beams according to the second control signal, and split the 16 first beams into 4 second segments, where the 4 second segments include 3, 2, 4, and 7 first beams.
The beam splitting module may be one or more beam splitters. In a possible implementation manner, the beam splitter may be a Diffractive Optical Element (DOE), and the DOE may uniformly divide one laser beam from the laser into N first light beams, where diameters and divergence angles of the N emitted first light beams are completely the same as those of the light beam entering the DOE, and only a transmission path is changed. The number of first beams into which the DOE splits the laser and the interval between the first beams may be determined by the physical structure of the DOE. It will also be appreciated that the physical configuration of the DOE may be determined by the separation between the first beams, N being an integer greater than 1.
In another possible implementation manner, the beam splitter may also be a polarization beam splitter, and the polarization beam splitter may be composed of two Polarization Beam Splitters (PBSs), and the inclined surfaces of the two PBSs are attached to each other through an adhesive layer. The PBS is an optical element which is formed by plating a multilayer film structure on the inclined plane of a right-angle prism, then synthesizing a cubic structure through an adhesive layer, and making use of the property that when a light beam enters at a Brewster angle, the P polarization light transmittance is 1 and the S polarization light transmittance is less than 1, after the light beam passes through the multilayer film structure for multiple times at the Brewster angle, the P polarization component is completely transmitted, and most of the S polarization component is reflected (at least more than 90%). That is, the polarization beam splitter separates the incident light beams (P-polarized light and S-polarized light) into horizontally polarized light and vertically polarized light, i.e., P-polarized light and S-polarized light. The P polarized light completely passes through the reflective film, the S polarized light is reflected at an angle of 45 degrees, and the exit direction of the S polarized light and the exit direction of the P polarized light form an angle of 90 degrees. It should be noted that the polarization beam splitter may divide one laser beam into two, and if the laser beam is divided into four laser beams, 2 polarization beam splitters are required, and so on.
Fourth, ion trapping module
The ion trapping module may include an electrode and P ions trapped. Wherein the electrodes can be used to control the electric and potential fields trapping ions to achieve trapping of ions at different locations. Further, optionally, the electrodes may also be used to control one or more of the P ions to move, so as to realize the movement of the ions in space (called a shuttling manipulation), and the movement in space includes moving in the first partition and moving between the first partitions. Fig. 2 is a schematic structural diagram of an ion trapping module according to the present application. The ion trapping module can include trapped ions and an ion chip. Among them, the ion chip may include a Direct Current (DC) electrode and a Radio Frequency (RF) electrode. Ions are trapped in the ion trapping area, a one-dimensional or two-dimensional plane structure trap can be formed, and in the two-dimensional plane trap, the ions have richer transfer freedom and a more stable structure, so that the two-dimensional expansion of the ion trap is facilitated.
It should be noted that the ion trapping module in the present application may also be a "paul ion trap," also referred to as a quadrupole ion trap (four-rod trap), where the quadrupole ion trap may be implemented by adding a four-rod structure to a front end cap and a rear end cap, ions are focused on a line, which increases the storage capacity of ions, and helps to avoid space charge effect and simplify the electrode structure, and the quadrupole ion trap is also referred to as a linear ion trap. Or the device can also be a blade trap (blade trap), wherein the electrodes in the blade trap are in a blade shape, the electrode distance is smaller, the generated electric field is larger, and stronger trap binding can be provided.
In one possible implementation, the electrode may be configured to confine the P ions to the M first partitions of the ion confinement module according to a first control signal from the process control module. For example, performing the quantum algorithm a requires trapping 20 ions, the 20 ions are arranged into 4 first partitions, the 4 first partitions are respectively the first partition 1, the first partition 2, the first partition 3 and the first partition 4, the number of ions trapped in the first partition 1 is 5, the number of ions trapped in the first partition 2 is 3, the number of ions trapped in the first partition 3 is 4, and the number of ions trapped in the first partition 4 is 8, which can refer to the ion arrangement shown in fig. 3 a. For another example, 16 ions need to be trapped in the execution of the quantum algorithm B, and the 16 ions need to be arranged into 4 first partitions, and each first partition needs to be trapped with 4 ions, which can be referred to the schematic diagram of the ion arrangement shown in fig. 3B.
It should be noted that the spacing between the ions in each first partition, and the formation of a one-dimensional arrangement or a two-dimensional arrangement or a three-dimensional arrangement of the ions, may be determined by the quantum algorithm to be performed, and fig. 3a and 3b are only exemplary illustrations.
In this application, the M first partitions may be interrelated, such as in a shutling-operated ion trap system; or may be independent of each other, such as to implement an ion trap system in which multiple first partitions perform the same task. The multiple first partitions perform the same task, reducing the number of iterations of the quantum computation run.
It should be noted that, in order to prevent other external particles from colliding with ions trapped in the ion trapping module, a quantum state of the ions is damaged or the ions are lost, and the ions trapped in the ion trapping module need to be isolated from an external environment. In one possible implementation, the ion confinement module can be disposed in a vacuum system or an ultra-high vacuum system.
Light beam regulation and control module
In this application, the beam conditioning module may include a modulator and a path selection structure.
In a possible implementation manner, the modulator may be configured to receive the first light beam from the corresponding second partition, load control information on the received first light beam according to a third control signal to obtain a modulated first light beam, and transmit the modulated first light beam to the corresponding path selection structure. Wherein the third control signal is determined by the processing control module according to the manipulation information of the first light beam. Illustratively, the third control signal may be generated based on intensity information of the first beam required for the ions to be manipulated, frequency information, and quantum state manipulation timing of the P ions. That is, the modulator may load the received first optical beam with manipulation information according to the third control signal and control on or off of the optical path of the first optical beam. The path selection structure may be configured to adjust a transmission path of the modulated first light beam according to the fourth control signal, so that the modulated first light beam is transmitted to the corresponding ion in the corresponding first partition. The fourth control signal is generated by processing the voltage signal and the path control timing when the control module selects different transmission paths for the first light beam according to the path selection structure. That is, the fourth control signal is generated by selecting the transmission path of the first light beam according to the path selection structure.
As follows, the process of controlling the switching timing of the modulator, the switching timing of the first optical beam transmission path selected by the path selection structure, and the switching timing of the shutting operation by the processing control module is described in detail in different scenarios.
In scenario one, shutting is not needed to manipulate trapped ions.
In this scenario one, the switching timing of the modulator may be as shown in (a) of fig. 4, and the switching timing of the corresponding path selection structure selecting the first light beam is as shown in (b) of fig. 4. When the modulator is at off-timing (i.e. t)2～t5) Then, the path selection structure may be at t2～t5Within a time period (e.g. t)3～t4) Selecting a transmission path of the first light beam, for example, when the path selection structure is a MEMS mirror, the selection of the transmission path of the first light beam can be achieved by adjusting an angle of the MEMS mirror; when the path selection structure is an optical switch, the transmission path of the first light beam can be selected by selecting the corresponding relationship between the input port and the output port. When the modulator is at the on-time (t)1～t2Or t5～t6) In this case, the path selection structure usually does not select a transmission path, which helps to avoid the influence on the peripheral ions of the ions corresponding to the first light beam caused by selecting the transmission path of the first light beam.
Or, it can also be understood that, after the modulator breaks the optical path of the first light beam according to the third control signal, the MEMS mirror adjusts the angle of the MEMS mirror according to the fourth control signal, and selects the transmission path of the first light beam corresponding to the ion to be manipulated, and after the angle of the MEMS mirror is adjusted, the modulator modulates the first light beam and allows the modulated first light beam to pass through the modulator and be transmitted to the corresponding ion to be manipulated.
It should be noted that, when the modulator is in the off-sequence, the corresponding first light beam is not allowed to pass through, that is, the optical path of the corresponding first light beam is disconnected; when the modulator is in the on sequence, the corresponding first light beam is allowed to pass through, that is, the optical path of the corresponding first light beam is on. In addition, t3Can be compared with t2Coincidence, t4May or may not cooperate with t5And (4) overlapping.
In scenario two, shuttling is required to manipulate trapped ions, or it can also be understood that ion entanglement of two or more ions within or between first partitions needs to be generated.
In the second scenario, the switching timing of the modulator and the switching timing of the path selection structure can be referred to the descriptions in (a) in fig. 4 and (b) in fig. 4, and are not described herein again. That is, (a) and (b) in fig. 5 may be the same as (a) and (b) in fig. 4. The shutting manipulation in the ion trapping module is when the modulator is in the off-time (i.e., t) 2～t5) Within a time period (e.g. t)7～t8) Performed, reference may be made to (c) in fig. 5. The switching time sequence of the shutling control can be the same as or different from the switching time sequence of the first light beam transmission path selected by the path selection structure, and the application does not limit the switching time sequence.
Or may also be understood as: after the modulator breaks the optical path of the first light beam according to the third control signal, the MEMS mirror adjusts the angle of the MEMS mirror according to the fourth control signal, the transmission path of the first light beam corresponding to the ions to be controlled is selected, and the electrodes can perform shutting control according to the second control signal. After the angle of the MEMS reflector is adjusted and the electrodes finish shuttling operation, the modulator modulates the first light beam and allows the modulated first light beam to pass through.
Based on the description of the first and second scenarios, the process control module may control the switching timing sequence of the modulator, the path selection structure to adjust the switching timing sequence of the transmission path of the first light beam, and the flow between the switching timing sequence of the electrode, as shown in fig. 6, first control the modulation structure to disconnect the first light path, then the path selection structure adjusts the transmission path of the first light beam, or different ions establish entangled control (such as shutting) in the first partition or between the first partitions, then modulate the first light beam by the modulation structure and open the light path of the first light beam, and then disconnect the light path of the first light beam after the control is completed.
Fig. 7 is a schematic structural diagram of a light beam modulation module provided in the present application. The beam conditioning module includes a modulator and a path selection structure. Fig. 7 illustrates an example including a modulator 11, a modulator 1i, a path selection structure 11, and a path selection structure 1 i. The modulator 11 is configured to receive the first light beam 11 from the corresponding second partition, load control information on the received first light beam 11 according to a third control signal to obtain a modulated first light beam 11, and transmit the modulated first light beam 11 to the corresponding path selection structure 11. The path selection structure 11 is configured to adjust a transmission path (also referred to as a transmission direction) of the modulated first light beam 11 according to the fourth control signal, which may also be understood as selecting a transmission path for the modulated first light beam 11, so that the modulated first light beam 11 is transmitted to the corresponding ion 11 in the corresponding first partition. The modulator 1i is used for receiving the first light beam 1i from the corresponding second partition, loading control information on the received first light beam 1i according to third control information to obtain a modulated first light beam 1i, and transmitting the modulated first light beam 1i to the corresponding path selection structure 1 i; the path selection structure 1i is configured to select a transmission path for the modulated first light beam 1i according to a fourth control signal, so that the modulated first light beam 1i is transmitted to the corresponding ion 1i in the first partition 1.
It should be understood that the modulator loads the first light beam with the steering information, which can be understood as: the modulator loads a modulation voltage signal (i.e. modulation information) on the first light beam, so that certain physical characteristics (such as polarization, amplitude, frequency and phase) of the modulator are correspondingly changed, and certain parameters of the signal light are modulated when the signal light passes through, thereby realizing amplitude modulation, frequency modulation, phase modulation, intensity modulation, pulse modulation and the like. That is to say, different control information is loaded on the first light beam through the modulator, and different quantum states of ions can be controlled. In addition, in a possible implementation manner, the first light beam 11, the modulator 11, the path selection structure 11, and the ions 11 in the light beam regulation and control module correspond to each other, and the modulator 1i, the first light beam 1i, the path selection structure 1i, and the ions 1i correspond to each other.
It should be noted that one modulator may correspond to one first light beam, and may also correspond to a plurality of first light beams. In addition, the first light beam modulated by the modulator may be reflected to the path selection structure by the mirror, or may be directly emitted to the path selection structure, which is not limited in this application. Fig. 7 illustrates an example of reflection by a mirror.
In one possible implementation, the path selection structure may be configured to select a transmission path of the received modulated first light beam, which may be aligned with different ions. For example, in one scenario, the path selection structure may be configured to align the modulated first light beam 1i with the ions 1i by selecting a transmission path of the modulated first light beam 1 i. In another scenario, the path selection structure may be configured to align the modulated first light beam 1i with the ions 1ii by selecting a transmission path of the modulated first light beam 1 i. That is, the path selection structure may align the first beam with different ions. In this way, the path selection structure can minimize the number of laser beams, (i.e., reduce the number of first beams actually used) so as to satisfy the requirement of quantum computation for the first beams without increasing the number of lasers. Also, it helps to avoid the problem of spreading the laser beam over all trapped ions.
In combination with the above-mentioned quantum algorithm a, the first step requires simultaneous manipulation of a maximum of 16 ions, and the second step requires simultaneous manipulation of 4 ions. Taking the first partition 1 as an example, the number of ions to be manipulated in the first step in the first partition 1 is 3, the number of ions to be manipulated in the second step is 2, after the manipulation in the first step is completed, the modulator may disconnect the optical paths of all the first light beams corresponding to the first partition 1 (i.e., the first light beam in the second partition 1), the path selection structure may be 2 ions remaining in the first partition 1, select 2 first light beams from the 3 light beams in the second partition 1, and change the transmission paths of the 2 selected first light beams, so that the 2 changed first light beams may be respectively transmitted to the 2 ions remaining in the first partition 1, and so on; after the path selection structure completes the selection of the transmission path of the first light beam, the modulator can control the light paths of the 2 first light beams corresponding to the second step to be on, and the other 1 light beam which is not used is off.
In the present application, the modulator may be an acousto-optic modulator (AOM), an acousto-optic deflector (AOD), an electro-optic deflector (EOD), or an electro-optic modulator (EOM). Wherein, (1) AOM and AOD generally refer to acousto-optic devices that control variations in laser beam intensity. The acousto-optic modulation is an external modulation technique, the modulation signal is acted on the electroacoustic transducer in the form of voltage signal (amplitude modulation), and then converted into the ultrasonic field changed in the form of voltage signal, when the light wave passes through acousto-optic medium, the light carrier wave is modulated into the intensity modulation wave carrying information due to acousto-optic action. (2) EOM and EOD refer to modulators made using the electro-optic effect of certain electro-optic crystals, such as lithium niobate crystal (LiNb03), gallium arsenide crystal (GaAs), and lithium tantalate crystal (LiTa 03). The electro-optic effect is that when a voltage is applied to the electro-optic crystal, the refractive index of the electro-optic crystal changes, which results in the change of the characteristics of the light wave passing through the crystal, and the modulation of the phase, amplitude, intensity, frequency and polarization state of the signal light is realized. Further, to minimize the cross-talk problem between beams caused by the integrated multi-channel AOM, the AOM may be a single-channel modulator.
In this application, the routing structure may be a MEMS mirror or an optical switch. When the path selection structure is an MEMS mirror, the beam adjustment and control module may further include an objective lens for converging the first beam from the MEMS mirror and transmitting the converged first beam to the corresponding ion. It should be noted that, in order to reduce the influence of the first light beam on the surrounding ions when the first light beam quantum-manipulating is performed on the ions, the beam waist of the first light beam at the ions needs to be focused to be very small (usually, micrometer order), and the objective lens may adopt an objective lens with a higher numerical aperture, which may be formed by combining a plurality of objective lenses, and the numerical aperture may reach above 0.2. In addition, the objective lens is located at a small distance from the vacuum system trapping the ions, and the objective lens can be generally arranged in the vacuum system. When the path selection structure is an optical switch (optical switch includes an output port and an input port), the beam conditioning module may further include an optical fiber for transmitting the first beam at the output port to the ion corresponding to the output port. Illustratively, the light switching includes, but is not limited to: an integrated MEMS mirror array, micro-ring, or Mach-Zehnder (MZ) interference ring.
It should be noted that the controllable deflection angle of the MEMS mirror is generally ± 5 °, considering that the distance from the MEMS mirror to the ions is several tens of centimeters, and the ion distance is generally in the order of micrometers, so the angle control range of the MEMS mirror is sufficient.
Based on the foregoing, two specific implementations of the ion trap system are given below with reference to specific hardware structures, so as to further understand the implementation process of the ion trap system.
Example 1
Fig. 8a is a schematic diagram of another ion trap system architecture provided in the present application. As shown in fig. 8a, the ion trap system includes a beam splitter, M beam conditioning modules, an ion trapping module, and a process control module. Each beam regulation and control module comprises an AOM, an MEMS reflector and an objective lens, and the ion trapping module comprises P trapped ions. In this example, the first light beams, the AOMs, and the MEMS mirrors are in one-to-one correspondence, the number of the AOMs included in each light beam adjustment and control module may be the same or different, and the number of the included MEMS mirrors may be the same or different, which is not limited in this application. The example is illustrated with an ion trap system performing quantum algorithm a.
And the processing control module is used for generating a second control signal according to the arrangement of the P ions, generating a third control signal according to the arrangement of the P ions and the maximum number of ions which need to be simultaneously controlled in each second zone, generating a fourth control signal according to the voltage signal and the path control time sequence when the path selection structure selects different transmission paths for the first light beam, respectively transmitting the second control signal to the beam splitter, transmitting the first control signal to the electrode, transmitting the third control signal to the AOM, and transmitting the fourth control signal to the MEMS mirror. For details, reference may be made to the description of the processing control module, and details are not described here.
And a laser for emitting a laser beam to the beam splitter.
And the electrode is used for trapping the P ions to the M first partitions according to the first control signal. For example, first partition 1 has ions 11, 1i, etc. trapped therein, and first partition M, first partition M has ions M1, Mj, etc. trapped therein. Illustratively, when the ion trap system performs the quantum algorithm a, the electrode traps 20 ions, and the 20 ions are arranged into 4 first partitions, the 4 first partitions are respectively a first partition 1, a first partition 2, a first partition 3, and a first partition 4, the number of ions trapped in the first partition 1 is 5, the number of ions trapped in the first partition 2 is 3, the number of ions trapped in the first partition 3 is 4, and the number of ions trapped in the first partition 4 is 8.
And the beam splitter is used for dividing the received laser beam into N first light beams according to a second control signal, dividing the N first light beams into M second subareas, and transmitting the first light beam in each second subarea to the corresponding light beam regulating and controlling module. As shown in FIG. 8a, the first beam 11 in the second partition 1 is transmitted to the AOM in the beam conditioning module 111And so on, the first light beam Mj in the second partition M is transmitted to the AOM in the beam regulation module M Mj. Illustratively, when the ion trap system performs quantum algorithm a, the beam splitter divides the laser beam into 16 first beams, the 16 first beams are divided into 4 second segments, respectively, a second segment 1, a second segment 2, a second segment 3, and a second segment 4, the second segment 1 includes 3 first beams, the second segment 2 includes 2 first beams, the second segment 3 includes 4 first beams, and the second segment 4 includes 7 first beams.
And the AOM is used for receiving the first light beam from the corresponding second partition, loading control information on the received first light beam according to a third control signal to obtain a modulated first light beam, and transmitting the modulated first light beam to the corresponding MEMS reflector. As shown in FIG. 8a, AOM11Corresponding first beam 11, AOM of second sub-section 11iFirst beam 1i of corresponding second zone 1, and so on, AOMM1Corresponding to the first beam M1, AOM in the second division MMjCorresponding to the first light beam Mj in the second division M. AOM11The first light beam 11 in the second partition 1 can be loaded with control information to obtain the modulated first light beam 11, and the modulated first light beam 11 is transmitted to the MEMS mirror 11, and so on, AOMMjAnd loading control information on the first light beam Mj to obtain a modulated first light beam Mj, and transmitting the modulated first light beam Mj to the MEMS reflector Mj. MEMS reflection And the mirror is used for adjusting the angle of the MEMS reflecting mirror according to the fourth control signal, selecting a transmission path of the first light beam and enabling the first light beam to be transmitted to the corresponding ions in the corresponding first partition. For example, MEMS mirror 11 receives signals from AOM11The modulated first light beam 11 adjusts the angle of the MEMS mirror 11 according to the fourth control signal, so that the modulated first light beam 11 is transmitted to the corresponding ion 11, and so on, the MEMS mirror Mj receives the light from the AOMMjAnd adjusting the angle of the MEMS mirror Mj according to the fourth control signal to transmit the modulated first light beam Mj to the corresponding ion Mj.
Illustratively, when the ion trap system executes the quantum algorithm a, for the first step of quantum manipulation, the second partition 1, the first partition 1 and the beam steering module 1 are taken as an example for illustration. The 3 first light beams included in the second division are the first light beam 11, the first light beam 12, and the first light beam 13, respectively; the AOMs included in the beam conditioning module 1 are AOMs respectively11、AOM12、AOM13The MEMS mirrors are MEMS mirror 11, MEMS mirror 12 and MEMS mirror 13; the first partition 1 corresponds to 3 ions, namely, ion 11, ion 12 and ion 13. AOM11Loading control information on the first light beam 11 in the second partition 1, and transmitting the modulated first light beam 11 to the MEMS mirror 11, wherein the MEMS mirror 11 adjusts a transmission path of the modulated first light beam 11, so that the modulated first light beam 11 is transmitted to the ion 11; AOM 12Loading control information on the first light beam 12 in the second partition 1, and transmitting the modulated first light beam 12 to the MEMS mirror 12, wherein the MEMS mirror 12 adjusts a transmission path of the modulated first light beam 12, so that the modulated first light beam 12 is transmitted to the ions 12; AOM13Loading control information on the first light beam 13 in the second partition 1, transmitting the modulated first light beam 13 to the MEMS mirror 13, and adjusting the transmission path of the modulated first light beam 13 by the MEMS mirror 13 to transmit the modulated first light beam 13 to the ion 13; and the operation of the first step is finished by analogy. All AOMs then break the path of all first beams. Each MEMS mirror selects a transmission path of the first beam for ions in the second manipulation step. Still in the secondThe partition 1, the first partition 1 and the light beam adjusting module 1 are taken as an example for explanation, 2 ions corresponding to the first partition 1 are ions 14 and ions 15, the MEMS mirror may be any two of the MEMS mirror 11, the MEMS mirror 12 and the MEMS mirror 13, and the first light beam corresponding to the ions 14 and the ions 15 may be any two of the first light beam 11, the first light beam 12 and the first light beam 13. For example, the transmission path of first beam 12 may be selected for ions 14 by MEMS mirror 12, the transmission path of first beam 13 may be selected for ions 15 by MEMS mirror 13, and after the path selection of the first beam is completed by the MEMS mirror, the AOM 12And AOM13The corresponding switches are opened, i.e. the first beam 12 and the first beam 13 are allowed to travel along the newly selected travel path to the corresponding ions 14 and 15, respectively.
Example two
Fig. 8b is a schematic diagram of another ion trap system architecture provided in the present application. As shown in fig. 8b, the ion trap system includes a beam splitter, M beam conditioning modules, an ion trapping module, and a process control module. Each beam regulation and control module comprises an AOM, an optical switch and an optical fiber, and each ion trapping module comprises P trapped ions. The optical switch includes ingress ports and egress ports, one ingress port corresponding to at least one egress port and one egress port corresponding to an optical fiber (fig. 8b includes multiple egress ports).
The processing control module is used for generating second control signals according to the arrangement of the P ions, generating third control signals according to the arrangement of the P ions and the maximum number of ions which need to be controlled simultaneously in each second zone, generating fourth control signals according to voltage signals and path control time sequences when the path selection structure selects different transmission paths for the first light beam, transmitting the first control signals to the electrode, transmitting the second control signals to the beam splitter, transmitting the third control signals to the AOM, and transmitting the fourth control signals to the optical switch light. For details, reference may be made to the description of the processing control module, and details are not described here.
And a laser for emitting a laser beam to the beam splitter.
And the electrode is used for trapping the P ions to the M first partitions according to the first control signal. Reference is made here to the description of fig. 8a above, which is not described in detail here.
And the beam splitter is used for dividing the received laser beam into N first light beams according to a second control signal, dividing the N first light beams into M second subareas, and transmitting the first light beam in each second subarea to the corresponding light beam regulating and controlling module. As shown in FIG. 8b, the first beam 11 in the second partition 1 is transmitted to the AOM in the beam conditioning module 111And so on, the first light beam Mj in the second partition M is transmitted to the AOM in the beam regulation module MMj. The process of combining quantum algorithm a can be referred to as the description of the beam splitter in fig. 8a above.
And the AOM is used for receiving the first light beam from the corresponding second partition, loading control information on the received first light beam according to a third control signal to obtain a modulated first light beam, and transmitting the modulated first light beam to the corresponding MEMS reflector. As shown in FIG. 8b, AOM11Loading control information on the first light beam 11 to obtain a modulated first light beam 11, transmitting the modulated first light beam 11 to the MEMS mirror 11, and so on, AOM MjAnd loading control information on the first light beam Mj to obtain a modulated first light beam Mj, and transmitting the modulated first light beam Mj to the MEMS reflector Mj.
And the input port is used for receiving the modulated first light beam from the corresponding modulator and transmitting the modulated first light beam to the corresponding output port. As shown in FIG. 8b, ingress port 11 receives data from the AOM11The modulated first light beam 11 selects an output port corresponding to the input port 11 according to the fourth control signal, so that the modulated first light beam 11 is transmitted to the corresponding ion 11, and so on, and the input port Mj receives the light beam from the AOMMjThe modulated first light beam Mj is controlled according to the fourth control; and (4) making a signal, selecting an output port corresponding to the input port Mj, and transmitting the modulated first light beam Mj to the corresponding ion Mj.
And the output port is used for transmitting the received modulated first light beam to a corresponding optical fiber.
And the optical fiber is used for transmitting the modulated first light beam to corresponding ions in the corresponding first partition.
Further optionally, the optical fiber may couple the modulated first light beam into an optical waveguide of the ion chip, where the optical waveguide has a plurality of light outlets, and one ion corresponds to at least one light outlet (for example, when one ion needs two light beams to be controlled, there may be two light outlets), and the modulated first light beam is transmitted to the corresponding ion through the light outlet of the optical waveguide. In this second example, both the electrode and the optical waveguide may be integrated on the ion chip.
By using the optical switch and the optical fiber, the volume of the ion trap system and the complexity of the optical path design are reduced. Moreover, the first light beam is coupled into the optical waveguide, and the first light beam can be directly aligned to corresponding ions through the light outlet on the optical waveguide, so that the ion trap system is simplified to control the ions.
Based on the above and the same concept, fig. 9 schematically illustrates a method flow diagram of an ion manipulation method provided in an embodiment of the present application. The method may be applied to the ion trap system in any of the embodiments described above. The method comprises the following steps:
This step 901 can be referred to the above description of the ion trapping module, and is not described in detail here.
And 902, splitting the laser beam according to the second control signal to obtain N first light beams, and dividing the N first light beams into M second partitions. Wherein the second control signal is generated according to the arrangement of the P ions and the maximum number of ions to be simultaneously manipulated in each second division, and N is an integer greater than M.
This step 902 can be referred to the description of the splitting module, and is not described in detail here.
In a possible implementation manner, the first light beam in each second partition may be loaded with the manipulation information according to a third control signal, so as to obtain the modulated first light beam, where the third control signal is generated according to the manipulation information of the first light beam in the second partition. For a specific process, reference may be made to the above-mentioned modulation process of the first light beam, and details are not repeated here.
In a possible implementation manner, the transmission path of the modulated first light beam may be adjusted according to a fourth control signal, so that the modulated first light beam is transmitted to the corresponding ion in the corresponding first partition, and the fourth control signal is generated according to the voltage signal and the path control timing sequence when different transmission paths are selected for the first light beam. For the description of the path selection structure for selecting the transmission path for the first light beam, details thereof are omitted here.
In the embodiments of the present application, unless otherwise specified or conflicting with respect to logic, the terms and/or descriptions in different embodiments have consistency and may be mutually cited, and technical features in different embodiments may be combined to form a new embodiment according to their inherent logic relationship.
In the present application, "a plurality" means two or more. In the description of the text of this application, the character "/" generally indicates that the former and latter associated objects are in an "or" relationship. It is to be understood that the various numerical references referred to in the embodiments of the present application are merely for descriptive convenience and are not intended to limit the scope of the embodiments of the present application. The sequence numbers of the above-mentioned processes do not mean the execution sequence, and the execution sequence of the processes should be determined by their functions and inherent logic. "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. Furthermore, the terms "comprises" and "comprising," as well as any variations thereof, are intended to cover a non-exclusive inclusion, such as a list of steps or elements. A method, system, article, or apparatus is not necessarily limited to those steps or elements explicitly listed, but may include other steps or elements not explicitly listed or inherent to such process, system, article, or apparatus.
Although the present application has been described in conjunction with specific features and embodiments thereof, it will be evident that various modifications and combinations can be made thereto without departing from the spirit and scope of the application. Accordingly, the specification and figures are merely illustrative of the concepts defined by the appended claims and are intended to cover any and all modifications, variations, combinations, or equivalents within the scope of the application.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the embodiments of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to encompass such modifications and variations.
Claims (9)
1. An ion trap system, comprising: the ion trapping device comprises a processing control module, a beam splitting module, M light beam regulating and controlling modules and an ion trapping module, wherein the ion trapping module comprises P trapped ions and electrodes, M is an integer larger than 1, and P is an integer larger than M;
the electrode is used for trapping P ions in M first partitions of the ion trapping module according to a first control signal, the M first partitions correspond to the M beam regulating and controlling modules one by one, and the first control signal is generated by the processing control module according to the arrangement of the P ions;
The beam splitting module is configured to split a laser beam from a laser according to a second control signal to obtain N first light beams, divide the N first light beams into M second partitions, and transmit the first light beams in the M second partitions to the M light beam adjusting and controlling modules respectively, where the M light beam adjusting and controlling modules correspond to the M second partitions one to one, the second control signal is generated by the processing control module according to the arrangement of the P ions and a maximum number of ions that need to be simultaneously controlled in each of the second partitions, and N is an integer greater than M;
the light beam regulating and controlling module is used for receiving the first light beam from the corresponding second subarea, modulating the received first light beam and transmitting the modulated first light beam to the corresponding ions in the corresponding first subarea.
2. The system of claim 1, wherein the beam conditioning module comprises a modulator and a path selection structure;
the light beam control module is used for receiving the first light beam from the corresponding second partition, modulating the received first light beam, and transmitting the modulated first light beam to the corresponding ions in the corresponding first partition, and includes:
The modulator is configured to receive the first light beam from the corresponding second partition, load control information on the received first light beam according to a third control signal, obtain a modulated first light beam, and transmit the modulated first light beam to the corresponding path selection structure, where the third control signal is generated by the processing control module according to the control information of the first light beam in the corresponding second partition;
the path selection structure is configured to adjust a transmission path of the modulated first light beam according to a fourth control signal, so that the modulated first light beam is transmitted to a corresponding ion in a corresponding first partition, where the fourth control signal is generated by the processing control module according to a voltage signal and a path control timing sequence when the path selection structure selects different transmission paths for the first light beam.
3. The system of claim 2, wherein the modulator is further configured to control the on or off of the optical path of the first optical beam in the corresponding second segment based on the third control signal.
4. The system of any one of claims 1 to 3, wherein the electrodes are further configured to control movement of one or more of the P ions in accordance with the first control signal.
5. The system of any of claims 2 to 4, wherein the modulator is a single channel modulator.
6. The system of any of claims 2 to 5, wherein the routing structure comprises a micro-electromechanical system (MEMS) mirror, or an optical switch.
7. A method of ion manipulation, comprising:
trapping P ions in M first partitions according to a first control signal, wherein the first control signal is generated according to the arrangement of the P ions, M is an integer larger than 1, and P is an integer larger than M;
splitting a laser beam according to a second control signal to obtain N first light beams, and dividing the N first light beams into M second partitions, wherein the second control signal is generated according to the arrangement of the P ions and the maximum number of ions which need to be controlled simultaneously in each second partition, and N is an integer greater than M;
respectively modulating the first light beams in the M second subareas to obtain modulated first light beams;
transmitting the modulated first light beams in the M second partitions to corresponding ions in the M first partitions respectively, wherein the M second partitions correspond to the M first partitions in a one-to-one manner.
8. The method of claim 7, wherein said individually modulating the first beam in the M second partitions comprises:
and loading control information on the first light beam in each second partition according to a third control signal to obtain the modulated first light beam, wherein the third control signal is generated according to the control information of the first light beam in the second partition.
9. The method of claim 8, wherein said transmitting the modulated first light beams in the M second partitions to the corresponding ions in the M first partitions, respectively, comprises:
and adjusting the transmission path of the modulated first light beam according to a fourth control signal, so that the modulated first light beam is transmitted to the corresponding ions in the corresponding first partition, wherein the fourth control signal is generated according to a voltage signal and a path control time sequence when different transmission paths are selected for the first light beam.
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| WO2023040615A1 (en) * | 2021-09-18 | 2023-03-23 | 华为技术有限公司 | Laser transmission device and ion trap system |
| WO2023087770A1 (en) * | 2021-11-16 | 2023-05-25 | 华为技术有限公司 | Particle trap system |
| CN114429217A (en) * | 2022-04-01 | 2022-05-03 | 国仪量子(合肥)技术有限公司 | Optical power stabilization system and ion trap quantum computing system |
| CN116435001A (en) * | 2023-06-13 | 2023-07-14 | 华翊博奥(北京)量子科技有限公司 | Chip ion trap |
| CN116435001B (en) * | 2023-06-13 | 2023-11-10 | 华翊博奥(北京)量子科技有限公司 | Chip ion trap |
| CN117852663A (en) * | 2024-03-07 | 2024-04-09 | 国开启科量子技术(安徽)有限公司 | Ion addressing device and ion trap quantum computer |
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