CN112731718B - Silicon-based liquid crystal display chip manufacturing method and silicon-based liquid crystal display chip - Google Patents
Silicon-based liquid crystal display chip manufacturing method and silicon-based liquid crystal display chip Download PDFInfo
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- CN112731718B CN112731718B CN202011189724.7A CN202011189724A CN112731718B CN 112731718 B CN112731718 B CN 112731718B CN 202011189724 A CN202011189724 A CN 202011189724A CN 112731718 B CN112731718 B CN 112731718B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
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Abstract
The invention discloses a silicon-based liquid crystal display chip manufacturing method and a silicon-based liquid crystal display chip, wherein the method comprises the following steps: depositing a first dielectric layer on a substrate; etching the first dielectric layer to form a first opening structure; depositing a first metal layer to fill the first opening structure to form a pad through hole plug, and etching the first metal layer to form a pad structure; depositing a second dielectric layer and a third dielectric layer on the first metal layer; etching the third dielectric layer to form a second opening structure; etching the first dielectric layer and the second dielectric layer to form a third opening structure; depositing a second metal layer to fill the third opening structure and the second opening structure to form a pixel electrode through hole plug and a pixel electrode structure; and etching the third dielectric layer and the second dielectric layer to expose the bonding pad structure, thereby completing the manufacture of the silicon-based liquid crystal display chip. The invention can make the position of the chip bonding pad structure lower than the position of the pixel electrode, and greatly improve the integral flatness of the chip, thereby accurately controlling the thickness of the liquid crystal and improving the performance of the silicon-based liquid crystal display chip.
Description
Technical Field
The invention belongs to the technical field of integrated circuit manufacturing and liquid crystal display, and particularly relates to a silicon-based liquid crystal display chip manufacturing method and a silicon-based liquid crystal display chip.
Background
The Liquid Crystal on Silicon (LCoS) micro display chip is based on the semiconductor integrated circuit manufacturing process, and after the integrated circuit is manufactured on the Silicon, a layer of Liquid Crystal is manufactured on the chip to form a micro chip capable of displaying, and the micro chip has the advantages of high integration level, high aperture opening ratio, high resolution, low power consumption and the like.
The characteristics of liquid crystal require that a chip manufactured on silicon has very high flatness, specifically, except for the pixel electrode region of the chip, the other regions of the chip also have sufficient flatness, and the height difference between the other regions (such as a bonding pad) and the pixel needs to be as small as possible, so that the thickness of the liquid crystal can be accurately controlled in the subsequent liquid crystal filling process. In a standard CMOS process with a process line width of 130nm or less, a metal interconnection line usually adopts copper instead of aluminum, a chip bonding pad adopts thick aluminum, the process procedure usually comprises the steps of manufacturing a pixel electrode firstly after a silicon substrate and the interconnection line are manufactured, manufacturing the chip bonding pad finally, etching a dielectric layer in a pixel electrode area, and exposing the pixel electrode, so that the position of the pixel electrode area is much lower than that of the bonding pad area, the whole chip is uneven, the liquid crystal thickness in the pixel area becomes uncontrollable when liquid crystals are poured subsequently, the display effect of a micro-display chip is seriously influenced by the overlarge liquid crystal thickness, and the performance of the chip is poor.
Disclosure of Invention
Aiming at the problems, the invention provides a manufacturing method of a silicon-based liquid crystal display chip and the silicon-based liquid crystal display chip, which can enable the position of a chip bonding pad structure to be lower than the position of a pixel electrode structure, and greatly improve the integral flatness of the chip, thereby accurately controlling the thickness of liquid crystal and improving the performance of the silicon-based liquid crystal display chip.
In order to achieve the technical purpose and achieve the technical effects, the invention is realized by the following technical scheme:
in a first aspect, the present invention provides a method for manufacturing a liquid crystal on silicon display chip, comprising:
providing a substrate, wherein a display chip driving circuit is arranged on the substrate;
depositing a first dielectric layer on the substrate;
etching the first dielectric layer to form a first opening structure;
depositing a first metal layer to fill the first opening structure to form a pad through hole plug, and etching the first metal layer to form a pad structure;
depositing a second dielectric layer and a third dielectric layer on the first metal layer in sequence;
etching the third dielectric layer to form a second opening structure;
etching the first dielectric layer and the second dielectric layer to expose the signal connecting line layer on the top layer of the display chip driving circuit in the substrate to form a third opening structure;
depositing a second metal layer to fill the third opening structure and the second opening structure to form a pixel electrode through hole plug and a pixel electrode structure;
and etching the third dielectric layer and the second dielectric layer to expose the pad structure, thereby finishing the manufacture of the silicon-based liquid crystal display chip.
Optionally, the material of the pad structure is aluminum or copper-aluminum alloy.
Optionally, the material of the pixel electrode structure is copper.
Optionally, the step of depositing a first dielectric layer on the substrate further comprises: and carrying out planarization process treatment on the first dielectric layer.
Optionally, after the step of sequentially depositing the second dielectric layer and the third dielectric layer on the first metal layer, the method further includes: and carrying out planarization process treatment on the third dielectric layer.
Optionally, the substrate is a silicon substrate.
In a second aspect, the present invention provides a liquid crystal on silicon display chip, comprising:
the display device comprises a substrate, wherein a display chip driving circuit is arranged on the substrate;
the first dielectric layer covers the substrate and is provided with a first opening structure and a first through hole;
the second dielectric layer covers the first dielectric layer, is provided with a second through hole which corresponds to the first through hole in position and has the same radial size, and forms a third opening structure together with the first through hole;
the third dielectric layer covers the second dielectric layer and is provided with a second opening structure corresponding to the position of the second through hole, and the radial size of the second opening structure is larger than that of the second through hole;
the bonding pad structure is partially arranged in the first opening structure and is connected with a signal connecting line layer of a display chip driving circuit; the part of the pad structure is in contact with the second dielectric layer, one side of the pad structure, which is far away from the first dielectric layer, is provided with a pad opening, and the end surface of the pad structure, which is far away from the first dielectric layer, is lower than the end surface of the second dielectric layer, which is far away from the first dielectric layer;
the pixel electrode through hole plug is arranged in the third opening structure and is connected with a signal connecting line layer of a display chip driving circuit;
and the pixel electrode is arranged in the second opening structure.
Optionally, the material of the pad structure is aluminum or copper-aluminum alloy.
Optionally, the material of the pixel electrode structure is copper.
Optionally, the substrate is a silicon substrate.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a manufacturing method of a silicon-based liquid crystal display chip, which can enable the position of a chip bonding pad structure to be lower than the position of a pixel electrode structure, and greatly improve the integral flatness of the chip, thereby accurately controlling the thickness of liquid crystal and improving the performance of the silicon-based liquid crystal display chip.
Drawings
In order that the present disclosure may be more readily and clearly understood, reference is now made to the following detailed description of the present disclosure taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a flow chart of a method for manufacturing a LCOS display chip according to an embodiment of the present invention;
fig. 2 is a cross-sectional view of the silicon substrate corresponding to step S1;
fig. 3 is a cross-sectional view of the silicon substrate corresponding to step S2;
fig. 4 is a cross-sectional view of the silicon substrate corresponding to step S3;
fig. 5 is a cross-sectional view of the silicon substrate corresponding to step S4;
fig. 6 is a cross-sectional view of the silicon substrate corresponding to step S5;
fig. 7 is a cross-sectional view of the silicon substrate corresponding to step S6;
fig. 8 is a cross-sectional view of the silicon substrate corresponding to step S7;
fig. 9 is a cross-sectional view of the silicon substrate corresponding to step S8.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the scope of the invention.
The following detailed description of the principles of the invention is provided in connection with the accompanying drawings.
Example 1
As shown in fig. 1, an embodiment of the present invention provides a method for manufacturing a liquid crystal on silicon display chip, including the following steps:
s1: providing a substrate, wherein a display chip driving circuit is arranged on the substrate; in a specific implementation process, the substrate can be a silicon substrate;
s2: depositing a first dielectric layer on the substrate;
s3: etching the first dielectric layer to expose the signal connection layer on the top layer of the display chip driving circuit in the substrate and form a first opening structure required by the pad through hole plug;
s4: depositing a first metal layer to fill the first opening structure to form a pad through hole plug, and etching the first metal layer to form a pad structure;
s5: depositing a second dielectric layer and a third dielectric layer on the first metal layer in sequence;
s6: etching the third dielectric layer to form a second opening structure; etching the first dielectric layer and the second dielectric layer to expose the signal connecting line layer on the top layer of the display chip driving circuit in the substrate to form a third opening structure;
s7: depositing a second metal layer to fill the third opening structure and the second opening structure to form a pixel electrode through hole plug and a pixel electrode structure;
s8: and etching the third dielectric layer and the second dielectric layer to expose the pad structure, thereby finishing the manufacture of the silicon-based liquid crystal display chip.
Referring to fig. 2, the method for manufacturing a liquid crystal on silicon display chip of the present invention is applied to a substrate 100, the substrate 100 can be manufactured by a standard CMOS process and includes a display chip driving circuit, in this embodiment, a top layer of the substrate 100 is a signal connection layer 200 (i.e., a metal layer), the signal connection layer 200 is a top layer of the display chip driving circuit manufactured on a silicon substrate (the layer is a signal connection layer of the display chip driving circuit), a part of the signal connection layer 200 is used for connecting to a pixel electrode structure through a pixel electrode via plug, and another part of the signal connection layer 200 is used for connecting to a pad structure through a pad via plug;
referring to fig. 3, the method for manufacturing a liquid crystal on silicon (lcos) chip of the present invention first performs step S2, deposits a first dielectric layer 101 on a substrate 100, and performs a planarization process (CMP);
referring to fig. 4, fig. 4 is a cross-sectional view after step S3 is completed, in which the first dielectric layer 101 is etched to expose the signal connection layer 200 on the top layer of the driving circuit of the display chip in the substrate, and a first opening structure 201 required for forming a pad via plug is formed;
referring to fig. 5, fig. 5 is a cross-sectional view of the step S4, after the step S3 is completed, a first metal layer is deposited on the surface of the first dielectric layer 101 to fill the first opening structure 201, a pad via plug 202 is formed, and the first metal layer is etched to form a pad structure 203; the material of the first metal layer can be aluminum or copper-aluminum alloy;
referring to fig. 6, fig. 6 is a cross-sectional view of step S5, after step S5 is completed, a second dielectric layer 102 is deposited, a planarization process (CMP) is performed on the second dielectric layer 102, then a third dielectric layer 103 is deposited on the second dielectric layer 102, and then the third dielectric layer 103 is planarized (CMP);
referring to fig. 7, fig. 7 is a cross-sectional view of the step S6, the third dielectric layer 103 is etched to form a second opening structure 205 required for manufacturing a pixel electrode structure, the first dielectric layer 101 and the second dielectric layer 102 are etched to expose the signal connection layer 200, and a third opening structure 204 required for forming a pixel electrode via plug is formed;
referring to fig. 8, fig. 8 is a cross-sectional view of completing step S7, a second metal layer (copper metal) is deposited on the surface of the third dielectric layer 103, and fills the third opening structure 204 and the second opening structure 205, and finally, a CMP process is performed to form a pixel electrode via plug 206 and a pixel electrode structure 207; specifically, when depositing copper metal on the third dielectric layer 103, the method specifically includes the following steps: first, a continuous Cu seed layer is formed on the surfaces of the third opening structure 204 and the second opening structure 205 by CVD (chemical vapor deposition), then copper is grown by electroplating to a certain thickness, at this time, the third opening structure 204 and the second opening structure 205 are filled, and finally, the excess copper is removed by CMP.
Referring to fig. 9, fig. 9 is a cross-sectional view of the step S8, which is completed by etching the third dielectric layer 103 and the second dielectric layer 102 to form a pad opening 208, and finally exposing the pad structure 203.
In conclusion, the pad structure is manufactured before the pixel electrode structure is manufactured, so that the position of the pad structure is lower than that of the pixel electrode structure, the whole chip has better flatness, and the performance of the finally manufactured liquid crystal chip is obviously improved.
Example 2
An embodiment of the present invention provides a liquid crystal on silicon display chip, as shown in fig. 9, including:
the display device comprises a substrate 100, wherein a display chip driving circuit is arranged on the substrate 100;
a first dielectric layer 101 covering the substrate 100 and provided with a first opening structure 201 and a first through hole;
a second dielectric layer 102 covering the first dielectric layer 101, wherein a second through hole corresponding to the first through hole in position and having the same radial dimension is formed, and the second through hole and the first through hole together form a third opening structure 204;
a third dielectric layer 103 covering the second dielectric layer 102 and having a second opening structure 205 corresponding to the second via, wherein the radial dimension of the second opening structure 205 is greater than that of the second via;
a pad structure 203 partially disposed in the first opening structure 201 and connected to the signal connection layer 200 of the display chip driving circuit; the part of the pad structure is in contact with the second dielectric layer 102, a pad opening 208 is arranged on one side of the pad structure, which is far away from the second dielectric layer 102, and the end surface of the pad structure 203, which is far away from the first dielectric layer 101, is lower than the end surface of the second dielectric layer 102, which is far away from the first dielectric layer 101;
a pixel electrode via plug 206 disposed in the third opening structure 204 and connected to the signal connection layer 200 of the display chip driving circuit;
the pixel electrode 207 is disposed in the second opening structure 205.
In a specific implementation manner of the embodiment of the present invention, the material of the pad structure 203 is aluminum or a copper-aluminum alloy.
In a specific implementation manner of the embodiment of the present invention, the material of the pixel electrode structure 207 is copper.
In a specific implementation of an embodiment of the invention, the substrate 100 is a silicon substrate.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (10)
1. A method for manufacturing a Liquid Crystal On Silicon (LCOS) display chip is characterized by comprising the following steps:
providing a substrate, wherein a display chip driving circuit is arranged on the substrate;
depositing a first dielectric layer on the substrate;
etching the first dielectric layer to expose the signal connection layer on the top layer of the display chip driving circuit in the substrate to form a first opening structure;
depositing a first metal layer to fill the first opening structure to form a pad through hole plug, and etching the first metal layer to form a pad structure;
depositing a second dielectric layer and a third dielectric layer on the first metal layer in sequence;
etching the third dielectric layer to form a second opening structure;
etching the first dielectric layer and the second dielectric layer to expose the signal connecting line layer on the top layer of the display chip driving circuit in the substrate to form a third opening structure;
depositing a second metal layer to fill the third opening structure and the second opening structure to form a pixel electrode through hole plug and a pixel electrode structure; the position of the pad structure is lower than that of the pixel electrode structure;
and etching the third dielectric layer and the second dielectric layer to expose the pad structure, thereby finishing the manufacture of the silicon-based liquid crystal display chip.
2. The method of claim 1, wherein the step of manufacturing the LCOS display chip comprises: the bonding pad structure is made of aluminum or copper-aluminum alloy.
3. The method of claim 1, wherein the step of manufacturing the LCOS display chip comprises: the pixel electrode structure is made of copper.
4. The method of claim 1, wherein the step of manufacturing the LCOS display chip comprises: the step of depositing a first dielectric layer on the substrate further comprises: and carrying out planarization process treatment on the first dielectric layer.
5. The method of claim 1, wherein the step of manufacturing the LCOS display chip comprises: the step of sequentially depositing a second dielectric layer and a third dielectric layer on the first metal layer further comprises: and carrying out planarization process treatment on the third dielectric layer.
6. The method of claim 1, wherein the step of manufacturing the LCOS display chip comprises: the substrate is a silicon substrate.
7. A liquid crystal on silicon display chip, comprising:
the display device comprises a substrate, wherein a display chip driving circuit is arranged on the substrate;
the first dielectric layer covers the substrate and is provided with a first opening structure and a first through hole;
the second dielectric layer covers the first dielectric layer, is provided with a second through hole which corresponds to the first through hole in position and has the same radial size, and forms a third opening structure together with the first through hole;
the third dielectric layer covers the second dielectric layer and is provided with a second opening structure corresponding to the position of the second through hole, and the radial size of the second opening structure is larger than that of the second through hole;
the bonding pad structure is partially arranged in the first opening structure and is connected with a signal connecting line layer of a display chip driving circuit; the part of the pad structure is in contact with the second dielectric layer, one side of the pad structure, which is far away from the first dielectric layer, is provided with a pad opening, and the end surface of the pad structure, which is far away from the first dielectric layer, is lower than the end surface of the second dielectric layer, which is far away from the first dielectric layer;
the pixel electrode through hole plug is arranged in the third opening structure and is connected with a signal connecting line layer of a display chip driving circuit;
the pixel electrode structure is arranged in the second opening structure; the position of the bonding pad structure is lower than that of the pixel electrode structure.
8. The LCOS display chip of claim 7, wherein: the bonding pad structure is made of aluminum or copper-aluminum alloy.
9. The LCOS display chip of claim 7, wherein: the pixel electrode structure is made of copper.
10. The LCOS display chip of claim 7, wherein: the substrate is a silicon substrate.
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| TWI234043B (en) * | 2003-11-26 | 2005-06-11 | Hannstar Display Corp | Method of manufacturing liquid crystal display |
| CN102074505B (en) * | 2009-11-20 | 2013-04-17 | 中芯国际集成电路制造(上海)有限公司 | Liquid crystal on silicon (LCOS) device and manufacturing method thereof |
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