CN112731509A - Light guide scintillator array - Google Patents
Light guide scintillator array Download PDFInfo
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- CN112731509A CN112731509A CN202011602039.2A CN202011602039A CN112731509A CN 112731509 A CN112731509 A CN 112731509A CN 202011602039 A CN202011602039 A CN 202011602039A CN 112731509 A CN112731509 A CN 112731509A
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- 239000000463 material Substances 0.000 claims abstract description 28
- 239000013078 crystal Substances 0.000 claims description 32
- 150000002500 ions Chemical class 0.000 claims description 16
- 239000000919 ceramic Substances 0.000 claims description 13
- 238000005245 sintering Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 6
- 230000003213 activating effect Effects 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- 238000007569 slipcasting Methods 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 2
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 2
- 238000005266 casting Methods 0.000 claims description 2
- 229910003443 lutetium oxide Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 6
- 230000008859 change Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 230000000052 comparative effect Effects 0.000 description 13
- 239000002994 raw material Substances 0.000 description 11
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- 230000003247 decreasing effect Effects 0.000 description 5
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- 229920000647 polyepoxide Polymers 0.000 description 4
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- 230000005540 biological transmission Effects 0.000 description 2
- 230000007123 defense Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2002—Optical details, e.g. reflecting or diffusing layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
Abstract
The invention discloses a light guide scintillator array, which comprises a plurality of scintillator elements spliced in an array structure, wherein light rays are incident along the direction vertical to the cross section of the scintillator elements, and the light guide scintillator array is characterized in that: the scintillator element comprises 1 st to nth base layers which are diffused from the center to the outer layer along the cross section direction, and the refractive indexes of the materials of the 1 st to nth base layers are gradually reduced. Through the arrangement, the propagation path of part of light in the scintillator is changed by utilizing the gradual change of the refractive index, so that the problem of light energy loss caused by refraction of the light in the internal propagation process of the scintillator is solved, the total reflection of light is realized, and the light output performance of the scintillator is improved.
Description
Technical Field
The invention relates to the technical field of scintillation detectors, in particular to a light guide scintillator array.
Background
The scintillation detector is an ionizing radiation detector and is widely applied to the fields of medical treatment, national defense, security inspection and the like. The scintillator array is a core component of the scintillation detector, is a conversion medium of high-energy rays and optical signals, can convert the high-energy rays (X rays/gamma rays) or charged particles into ultraviolet light or visible light, further converts the optical signals into electric signals through photon detection equipment such as a photomultiplier tube and the like, and finally presents the information of the interaction between the high-energy rays and the detected substances in the form of digital signals.
In the production process of the scintillator array, firstly, machining is needed to be carried out on a blocky scintillation medium, namely, the scintillation medium is machined into a plurality of small elements in the modes of cutting, grinding and the like, then the elements are filled into a mold, and a reflecting layer is formed on the side face of each element and the light-emitting surface of the array in the glue filling mode.
Conventional scintillating ceramic cell structures are shown in fig. 1. the body is generally composed of a scintillator 1 (including single or multi-layer structures) and a reflective layer 2. The propagation of light within the scintillator 1 relies on the reflection of the outer reflective layer 2. The photons exit from the light exit surface and need to be reflected by the interface between the scintillator 1 and the reflective layer 2 for multiple times. The photons are reflected by the interface, so that energy loss is caused, and the longer the length of the scintillator is, the greater the loss is, and the high-efficiency extraction of the photons is not facilitated.
Disclosure of Invention
The invention aims to provide a light guide scintillator array, which realizes the propagation constraint of photons by setting the descending of the refractive index, changes the propagation path of light and reduces the reflection loss of the light.
Aiming at the problems, the invention adopts a technical scheme that: the utility model provides a light guide scintillator array, includes a plurality of scintillator cells that are array structure concatenation, light is along perpendicular scintillator cell's cross section direction incident, its characterized in that: the refractive index of the material of each scintillator element is gradually reduced from the center to the outer layer along the cross section direction of the scintillator element.
Furthermore, each scintillator element comprises n base layers made of different materials, and the base layers comprise 1 st to nth base layers which are gradually overlapped from the center to the outer layer along the cross section direction; the refractive index of the 1 st to nth base layers is reduced in a step mode, and n is larger than or equal to 2.
Furthermore, the refractive index of the 1 st to nth base layers is 1.0-3.0.
Further, the base layer includes a matrix and an active ion doped in the matrix;
the substrate is made of Lu2O3Transparent ceramics or single crystals, Lu3Al5O12Transparent ceramics or single crystals, Y3Al5O12Transparent ceramic or single crystal, (Gd)xLu1-x)3(AlyGa1-y)5O12Transparent ceramic or single crystal, (Y)aLubGdc)2O3Transparent ceramics or single crystals, Gd2O2S transparent ceramic or single crystal, (Ca)xMg1-x)3(ScyLu1-y)2Si3O12NaI (TI) single crystal material, CsI (Na) single crystal material, BaF2Single crystal material, CaF2(Eu) single crystal material, BGO single crystal material, and CdWO4Single crystal material, PbWO4Single crystal material, YAP Ce single crystal material, GSO: ce single crystal material, LSO: one or more of Ce single crystal materials; wherein x is more than 0 and less than 1, and y is more than 0 and less than 1; a is more than 0 and less than 1, b is more than 0 and less than 1, and a + b + c is 1;
the activating ion is selected from Ce3+、Pr3+、Nd3+、Sm3+、Eu2+、Dy2+、Ho2+、Er2+、Tm2+、Ti2+、Cr2+And Mn2+One kind of (1).
Furthermore, each base layer of the scintillator element is formed by casting or grouting and then integrally sintering; or the respective substrates are bonded by epoxy or a transparent adhesive to form the scintillator element.
Further, the sides and bottom surfaces of the scintillator elements are connected by a reflective medium or an adhesive to form a scintillator array.
Further, the scintillator elements are cylindrical or polygonal.
The invention has the beneficial effects that: the scintillator elements are formed by the base layers with the decreasing refraction rates, photon transmission constraint is formed in the scintillator, the propagation path of light after the light enters the scintillator is changed, the problem of light energy loss caused by the fact that the light is reflected by a surface reflection medium in the scintillator is solved, and therefore the light output performance of the scintillator is improved.
Drawings
FIG. 1 is a schematic diagram of the ray propagation path of a conventional scintillator cell;
FIG. 2 is a schematic structural view of scintillator cells of example 1 of the present invention, comparative example 1;
FIG. 3 is a schematic structural view of a scintillator array of embodiment 1 of the present invention;
FIG. 4 is a schematic structural view of scintillator cells of examples 2 to 3 and comparative examples 2 to 3 of the present invention;
FIG. 5 is a schematic diagram of the structure of a scintillator cell according to another embodiment of the present invention;
FIG. 6 is a diagram illustrating the propagation path of light in the scintillator element according to the embodiment of the present invention.
Detailed Description
The technical features and advantages of the present invention are described in more detail below with reference to the accompanying drawings so that the advantages and features of the present invention may be more readily understood by those skilled in the art, and thus the scope of the present invention may be more clearly and clearly defined.
Preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are only for explaining the technical principle of the present invention, and are not intended to limit the scope of the present invention.
It should be noted that in the description of the present invention, the terms of direction or positional relationship indicated by the terms "upper", "lower", "left", "right", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, which are only for convenience of description, and do not indicate or imply that the device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
Furthermore, it should be noted that, in the description of the present invention, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
The invention provides a light guide scintillator array which is formed by splicing a plurality of scintillator elements in an array structure and can be used in the fields of medical treatment, national defense, security inspection detectors and the like.
The scintillator elements can be in a cylindrical, polygonal or other regular structural form, each scintillator element comprises a plurality of base layers which are overlapped from inside to outside along the cross section direction, the refractive index of each base layer is gradually reduced from the center to the outer layer, the transmission constraint of photons is realized through the overlapping of the base layers with the gradually reduced refractive indexes, the propagation path of the light after the light enters the scintillator elements is changed, the gradual change of the refraction rate of the light in the scintillator elements is realized, the problem of light energy loss caused by refraction after the light enters the scintillator is solved, and the light output performance of the scintillator is improved.
The superiority of the present invention for improving the light output performance of a scintillator is explained in detail by a plurality of examples and comparative examples below.
Example 1
The scintillator cell of embodiment 1 of the present invention, whose structure is shown in fig. 2, includes, in its cross-sectional direction, each scintillator cell which is diffused outward from the center: a basic unit, B basic unit, C basic unit, D basic unit, E basic unit, F basic unit, G basic unit, every basic unit is made by different materials to form 7 basic units that the refracting index progressively diminishes in proper order, promptly: the refractive index of the A base layer is larger than that of the B base layer, larger than that of the C base layer, larger than that of the D base layer, larger than that of the E base layer, larger than that of the F base layer and larger than that of the G base layer.
Gd is adopted in the A-G base layers in sequence3Al2Ga3O12、Gd3Al3Ga2O12、Gd3Al4Ga1O12、Gd3Al5O12、Gd2YAl5O12、GdY2Al5O12、Y3Al5O12The refractive index of the scintillator element is gradually decreased from 1.9 of the A-base layer to 1.82 of the G-base layer, and the total number of the layers is 7, wherein the A-base layer is formed by Gd3Al2Ga3O12The substrate is prepared by doping active ions, and the active ions are not doped in the rest components of each substrate. Weighing the raw materials according to a stoichiometric ratio, sequentially forming each base layer through grouting forming, and then preparing the scintillator element with the structure shown in figure 2 through the working procedures of sintering and the like; further, a scintillator array can be formed by splicing a plurality of the above scintillator elements, and adjacent scintillator elements and the bottoms of the scintillator elements are connected through a reflecting medium, so that the structure of the scintillator array is shown in fig. 3.
In the present embodiment, each scintillator element has a square cross section with a side of 2mm, a height of 2mm, and a thickness of about 0.285mm for each base layer in the scintillator element.
Example 2
The scintillator elements of embodiment 2 of the present invention are structured as shown in fig. 4, and each scintillator element includes, in its cross-sectional direction, a central outward diffusion: a basic unit, B basic unit, every basic unit is made by different materials to form 3 basic units that the refracting index progressively diminishes in proper order, promptly: the refractive index of the A base layer is larger than that of the B base layer.
Selection of YAlO3(YAP) as raw material for making base layer A, selecting Y3Al5O12The base layer B is made of YAlO with refractive index3(YAP) (refractive index 1.94) decreasing to Y3Al5O12(refractive index 1.82) in which the YAP of the A substrate was doped with activating ions, and the remaining substrate components were not doped with activating ions. Weighing the raw materials according to the stoichiometric ratio, and then forming the mixture by groutingForming A, B base layer, sintering to obtain scintillator element shown in FIG. 4; furthermore, a plurality of the scintillator elements are spliced to form a scintillator array, and the adjacent scintillator elements and the bottoms of the scintillator elements are connected through epoxy resin which is doped with a reflecting medium or a reflecting film.
In the present embodiment, the cross section of each scintillator element is a square with a side of 2mm, the height of each scintillator element is 2mm, and the thickness of each base layer in the scintillator element is about 1 mm.
Example 3
Scintillator cells of embodiment 3 of the present invention, whose structure referring to fig. 4, each scintillator cell includes, in its cross-sectional direction, from the center out-diffused: a basic unit, B basic unit, every basic unit is made by different materials to form 2 basic units that the refracting index progressively diminishes in proper order, promptly: the refractive index of the A base layer is larger than that of the B base layer.
Selecting Gd3Al2Ga3O12Preparing base layer A from raw materials, selecting Y3Al5O12Preparation of base layer B and base layer A (Gd)3Al2Ga3O12) Has a refractive index of 1.9, and a base layer B (Y)3Al5O12) Has a refractive index of 1.82, wherein Gd of the A-base layer3Al2Ga3O12The active ions are doped in the component of the B base layer, and the active ions are not doped in the component of the B base layer. The scintillator element with the structure shown in fig. 4 is prepared by weighing the raw materials according to the stoichiometric ratio, sequentially forming A, B base layers through slip casting, sintering and the like. Furthermore, a plurality of the scintillator elements are spliced to form a scintillator array, and the adjacent scintillator elements and the bottoms of the scintillator elements are connected through epoxy resin which is doped with a reflecting medium or a reflecting film.
In the present embodiment, the cross section of each scintillator element is a square with a side of 2mm, the height of each scintillator element is 2mm, and the thickness of each base layer in the scintillator element is about 1 mm.
Comparative example 1
Scintillator cell of comparative example 1, whichThe structure is shown in figure 2. Comprises 7 basal layers from inside to outside, Gd is selected3Al2Ga3O12The system is used as a raw material, and the A-G basal layers are all Gd3Al2Ga3O12Prepared into 7 layers in total, wherein Gd of the A base layer3Al2Ga3O12Active ions are doped, and the rest of the base layer components are not doped with the active ions. The refractive index of the A-G base layers is 1.9. The raw materials are weighed according to the stoichiometric ratio, and then are manufactured into the scintillator element with the structure shown in figure 2 through the processes of slip casting, sintering and the like. Further, a scintillator array can be formed by splicing a plurality of the scintillator elements, and adjacent scintillator elements and the bottoms of the scintillator elements are connected through a reflecting medium.
In the present comparative example, each scintillator cell was a square having a side of 2mm in cross section, the height of each scintillator cell was 2mm, and the thickness of each base layer in the scintillator cell was about 0.285 mm.
Comparative example 2
The scintillator cell of comparative example 2, the structure of which is shown in fig. 5. YAP is selected as a raw material, A, B base layers are all made of YAP, the total number is 2, wherein the YAP of the A base layer is doped with active ions, the other base layer components are not doped with the active ions, and the refractive index of the A, B base layer is 1.94. The raw materials are weighed according to the stoichiometric ratio, and then the scintillator element with the structure shown in figure 4 is prepared through the working procedures of grouting, sintering and the like. Furthermore, a plurality of the scintillator elements are spliced to form a scintillator array, and the adjacent scintillator elements and the bottoms of the scintillator elements are connected through epoxy resin which is doped with a reflecting medium or a reflecting film.
In the present comparative example, the scintillator elements had a square cross section with a side of 2mm, the height of each scintillator element was 2mm, and the thickness of each base layer in the scintillator elements was about 1 mm.
Comparative example 3
The scintillator cell of comparative example 3, the structure of which is shown in fig. 5. Selecting Gd3Al2Ga3O12As raw materials, A, B basal layers were all Gd3Al2Ga3O12Made of 2 layers in totalWherein the A-base layer is Gd3Al2Ga3O12The active ions are doped, the active ions are not doped in the other components of the base layer, and the refractive index of the A, B base layer is 1.9. The raw materials are weighed according to the stoichiometric ratio, and then the scintillator element with the structure shown in figure 4 is prepared through the working procedures of grouting, sintering and the like. Furthermore, a plurality of the scintillator elements are spliced to form a scintillator array, and the adjacent scintillator elements and the bottoms of the scintillator elements are connected through epoxy resin which is doped with a reflecting medium or a reflecting film.
In the present comparative example, the scintillator elements had a square cross section with a side of 2mm, the height of each scintillator element was 2mm, and the thickness of each base layer in the scintillator elements was about 1 mm.
Scintillator arrays of the same size were prepared based on the scintillator cells of examples 1 to 3 and comparative examples 1 to 3, and the light output performance test was performed on each scintillator array according to the measurement specification of 5.1 in GB/T13181-2002, and the results are shown in Table 1.
TABLE 1 comparison of light output Performance for each scintillator array
As can be seen from table 1, the present invention improves the overall light output performance of the scintillator element by providing a decreasing change in refractive index within the plurality of base layers of the scintillator element.
In other embodiments of the present invention, the structure of the scintillator elements may also be cylindrical as shown in FIG. 5, including n base layers (n ≧ 2) with decreasing refractive indices along the center to the outer layers.
After the light enters the scintillator element with the structure of the present invention, the schematic propagation path thereof can be seen in fig. 6, wherein, fig. a) is a schematic propagation path of the scintillator element with a double-layer structure after the light is incident; the graph b is a schematic diagram of a propagation path of the incident light of the scintillator element structure with a multilayer structure, and the propagation path of part of the light in the scintillator can be changed by changing the refractive index of each base layer and overlapping the number of layers, so that the reflection loss of the light is improved, and the light output performance is improved.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes performed by the present specification and drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (7)
1. A light guide scintillator array comprises a plurality of scintillator elements spliced in an array structure, and light is incident along the direction vertical to the cross section of each scintillator element, and is characterized in that: the refractive index of the material of each scintillator element is gradually reduced from the center to the outer layer along the cross section direction of the scintillator element.
2. The light-guide scintillator array of claim 1, wherein each of the scintillator elements comprises n base layers made of different materials, and the base layers comprise 1 st to nth base layers which are gradually stacked from a center to an outer layer in a cross-sectional direction; the refractive index of the 1 st to nth base layers is reduced in a step mode, and n is larger than or equal to 2.
3. The light guide scintillator array of claim 2, wherein the refractive index of the 1 st to nth base layers is between 1.0 and 3.0.
4. The light-guided scintillator array of claim 2 or claim 3, wherein the base layer comprises a matrix and active ions doped in the matrix;
the substrate is made of Lu2O3Transparent ceramics or single crystals, Lu3Al5O12Transparent ceramics or single crystals, Y3Al5O12Transparent ceramic or single crystal, (Gd)xLu1-x)3(AlyGa1-y)5O12Transparent ceramic or single crystal, (Y)aLubGdc)2O3Transparent ceramics or single crystals, Gd2O2S transparent ceramic or single crystal, (Ca)xMg1-x)3(ScyLu1-y)2Si3O12NaI (TI) single crystal material, CsI (Na) single crystal material, BaF2Single crystal material, CaF2(Eu) single crystal material, BGO single crystal material, and CdWO4Single crystal material, PbWO4Single crystal material, YAP Ce single crystal material, GSO: ce single crystal material, LSO: one or more of Ce single crystal materials; wherein x is more than 0 and less than 1, and y is more than 0 and less than 1; a is more than 0 and less than 1, b is more than 0 and less than 1, and a + b + c is 1;
the activating ion is selected from Ce3+、Pr3+、Nd3+、Sm3+、Eu2+、Dy2+、Ho2+、Er2+、Tm2+、Ti2+、Cr2+And Mn2+One kind of (1).
5. The light-guide scintillator array of claim 4, wherein each base layer of the scintillator elements is formed by casting or slip casting and then integrally sintering; or the respective substrates are bonded by epoxy or a transparent adhesive to form the scintillator element.
6. The light guide scintillator array of claim 1 or 2 wherein the sides and bottom surfaces of the scintillator elements are connected by a reflective medium or an adhesive to form a scintillator array.
7. The light-guided scintillator array of claim 1 or claim 2 wherein the scintillator elements are cylindrical or polygonal.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011602039.2A CN112731509A (en) | 2020-12-30 | 2020-12-30 | Light guide scintillator array |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011602039.2A CN112731509A (en) | 2020-12-30 | 2020-12-30 | Light guide scintillator array |
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