CN112730991A - Miniature probe for microwave field intensity detection, manufacturing method and application - Google Patents
Miniature probe for microwave field intensity detection, manufacturing method and application Download PDFInfo
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- CN112730991A CN112730991A CN202011469432.9A CN202011469432A CN112730991A CN 112730991 A CN112730991 A CN 112730991A CN 202011469432 A CN202011469432 A CN 202011469432A CN 112730991 A CN112730991 A CN 112730991A
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- 238000001514 detection method Methods 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000523 sample Substances 0.000 title claims abstract description 24
- 239000011521 glass Substances 0.000 claims abstract description 82
- 239000010703 silicon Substances 0.000 claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 67
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 230000007246 mechanism Effects 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000000126 substance Substances 0.000 claims abstract description 16
- 238000007789 sealing Methods 0.000 claims abstract description 10
- 238000005520 cutting process Methods 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 238000004080 punching Methods 0.000 claims abstract description 6
- 230000005611 electricity Effects 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 7
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 96
- 238000005259 measurement Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005553 drilling Methods 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/08—Measuring electromagnetic field characteristics
- G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
- G01R29/0878—Sensors; antennas; probes; detectors
- G01R29/0885—Sensors; antennas; probes; detectors using optical probes, e.g. electro-optical, luminescent, glow discharge, or optical interferometers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/002—Aligning microparts
- B81C3/004—Active alignment, i.e. moving the elements in response to the detected position of the elements using internal or external actuators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Abstract
The invention discloses a micro probe for microwave field intensity detection, a manufacturing method and application, comprising the following steps: placing a first glass wafer in the middle, respectively placing a first silicon wafer and a second silicon wafer on the upper surface and the lower surface of the first glass wafer, and bonding to form a silicon-glass-silicon wafer; punching the bonded silicon-glass-silicon wafer, and designing the number, size and spacing of the holes on the wafer according to the size of the atomic gas chamber to form the atomic gas chamber wafer; taking the atomic gas chamber wafer as an upper layer and taking the second glass wafer as a lower layer, and bonding to form a micro cavity; filling a working substance or a mixture of the working substances into an atom gas chamber of the micro cavity to form an unsealed mechanism; bonding the third glass wafer with the unsealed mechanism to form a sealed mechanism; and cutting each atomic gas chamber of the sealing mechanism to manufacture the miniature field intensity probe. The invention has the advantages that: the method is simple to realize and is not limited by the frequency of the microwave field.
Description
Technical Field
The invention belongs to the technical field of microwave field intensity detection, and particularly relates to a miniature probe for microwave field intensity detection, a manufacturing method and application.
Background
Based on the manipulation technology of microscopic particles such as atoms, ions or molecules and the quantum measurement technology based on the internal structure of the particles and the interaction between the internal structure and the outside, the measurement precision is greatly improved, the measurement system is more stable, and the application scene is wide. The microwave frequency standard technology based on atoms, ions and the like has the measurement precision reaching 10-16 orders of magnitude, and is widely applied to satellite navigation, space detection, communication networks and the like.
With the development of quantum technology, the NIST research group firstly provides a quantum field intensity detection technology based on rydberg atoms, takes an alkali atom steam chamber as a probe for microwave electric field detection, converts microwave field intensity measurement into measurement of atomic ratio frequency through the interaction of microwaves and atoms, has wide measurement frequency range, high sensitivity and high precision, is slightly interfered by external environment, can directly trace the microwave field intensity from international standard units, has wide application prospect and is paid much research attention.
The probe for the microwave field intensity is a medium for the interaction of the microwave field and atoms, is also the core for realizing the measurement of the microwave field intensity, and determines the detection performance of the microwave field. A traditional micro atomic gas chamber adopts a bonding mode of three layers of glass, silicon wafer and glass to form a micro chamber, however, the gas chamber only has light transmission on the upper surface and the lower surface, but cannot transmit light on other surfaces, and cannot meet the detection requirement of microwave field intensity. In addition, the volume of the antenna for traditional microwave field intensity detection is large, the size of the antenna is related to the frequency of the detected microwave field, and the microwave field intensity detection in a narrow space is particularly difficult.
Disclosure of Invention
The invention aims to provide a miniature probe for microwave field intensity detection, a manufacturing method and application, and solves the problem that the microwave field intensity in a narrow space is difficult to detect.
In view of the above, the present invention provides a method for manufacturing a microprobe for detecting microwave field intensity, comprising:
placing a first glass wafer in the middle, respectively placing a first silicon wafer and a second silicon wafer on the upper surface and the lower surface of the first glass wafer, and bonding to form a silicon-glass-silicon wafer;
punching the bonded silicon-glass-silicon wafer, and designing the number, size and spacing of the holes on the wafer according to the size of the atomic gas chamber to form the atomic gas chamber wafer;
taking the atomic gas chamber wafer as an upper layer, taking a second glass wafer as a lower layer, and bonding the atomic gas chamber wafer and the second glass wafer to form a micro cavity;
filling a working substance or a mixture of the working substances into the atomic gas chamber of the micro cavity to form an unsealed mechanism;
bonding the third glass wafer with the unsealed mechanism to form a sealing mechanism;
and step six, cutting off each atomic air chamber of the sealing mechanism by scribing to manufacture the miniature field intensity probe.
Further, the bonding forms a silicon-glass-silicon wafer comprising: and adopting an anodic bonding method to ground the first glass wafer, and negatively charge the first silicon wafer and the second silicon wafer, completing three-layer anodic bonding at high temperature and high pressure, and bonding the first glass wafer, the first silicon wafer and the second silicon wafer together.
Further, the bonded silicon-glass-silicon wafer is perforated by adopting a laser drilling or etching process.
Further, bonding the atomic gas chamber wafer and the second glass wafer to form a micro-cavity, including: and connecting the second glass wafer with negative electricity by adopting an anodic bonding method, grounding the second silicon wafer layer of the atomic gas chamber wafer, and completing bonding at high temperature and high pressure to form a micro cavity.
Further, bonding a third glass wafer to the unsealed mechanism, comprising: and connecting the third glass wafer with negative electricity by adopting an anodic bonding method, grounding the first silicon wafer layer of the unsealed mechanism, and finishing bonding under high temperature and high pressure.
Further, still include: and filling a certain amount of buffer gas in the bonding process of the third glass wafer and the unsealed mechanism.
Another object of the present invention is to provide a microprobe for detecting microwave field intensity, which is characterized in that: the manufacturing method is adopted for manufacturing.
It is a further object of the present invention to provide a use of a microprobe for detecting microwave field intensity, wherein: the micro probe manufactured by the manufacturing method is used for detecting the microwave field intensity, the detection light irradiates into the atomic gas chamber through the left glass, the coupling light irradiates into the atomic gas chamber through the right glass, and the microwave irradiates into the atomic gas chamber through the upper surface.
The invention achieves the following significant beneficial effects:
the realization is simple, include: placing a first glass wafer in the middle, and respectively placing a first silicon wafer and a second silicon wafer on the upper surface and the lower surface of the first glass wafer to form a silicon-glass-silicon wafer in a bonding mode; punching the bonded silicon-glass-silicon wafer, and designing the number, size and spacing of the holes on the wafer according to the size of the atomic gas chamber to form the atomic gas chamber wafer; taking the atomic gas chamber wafer as an upper layer, taking a second glass wafer as a lower layer, and bonding the atomic gas chamber wafer and the second glass wafer to form a micro cavity; filling a working substance or a mixture of the working substances into an atom gas chamber of the micro cavity to form an unsealed mechanism; bonding the third glass wafer with the unsealed mechanism to form a sealed mechanism; and cutting each atomic air chamber of the sealing mechanism by scribing to manufacture the miniature field intensity probe. The method is not limited by the frequency of a microwave field, an atomic steam chamber with small volume can be developed, and the method is applied to the detection of the microwave field intensity in a narrow space and solves the problem of limited application scene.
Drawings
FIG. 1 is a schematic diagram of a microprobe for microwave field intensity detection according to the present invention;
FIG. 2 is an exploded view of the miniature probe for microwave field intensity detection of the present invention.
Detailed Description
The advantages and features of the present invention will become more fully apparent from the following description and appended claims, taken in conjunction with the accompanying drawings and detailed description of specific embodiments of the invention. It is to be noted that the drawings are in a very simplified form and are not to scale, which is intended merely for convenience and clarity in describing embodiments of the invention.
It should be noted that, for clarity of description of the present invention, various embodiments are specifically described to further illustrate different implementations of the present invention, wherein the embodiments are illustrative and not exhaustive. In addition, for simplicity of description, the contents mentioned in the previous embodiments are often omitted in the following embodiments, and therefore, the contents not mentioned in the following embodiments may be referred to the previous embodiments accordingly.
While the invention is amenable to various modifications and alternative forms, specifics thereof have been shown by way of example in the drawings and will be described in detail. It should be understood that the inventors do not intend to limit the invention to the particular embodiments described, but intend to protect all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the claims. The same meta-module part number may be used throughout the drawings to represent the same or similar parts.
Referring to fig. 1 to 2, the present invention provides a method for manufacturing a micro probe for detecting microwave field intensity, comprising:
placing a first glass wafer in the middle, respectively placing a first silicon wafer and a second silicon wafer on the upper surface and the lower surface of the first glass wafer, and bonding to form a silicon-glass-silicon wafer;
punching the bonded silicon-glass-silicon wafer, and designing the number, size and spacing of the holes on the wafer according to the size of the atomic gas chamber to form the atomic gas chamber wafer;
taking the atomic gas chamber wafer as an upper layer, taking a second glass wafer as a lower layer, and bonding the atomic gas chamber wafer and the second glass wafer to form a micro cavity;
filling a working substance or a mixture of the working substances into the atomic gas chamber of the micro cavity to form an unsealed mechanism;
bonding the third glass wafer with the unsealed mechanism to form a sealing mechanism;
and step six, cutting off each atomic air chamber of the sealing mechanism by scribing to manufacture the miniature field intensity probe.
In one embodiment, the bonding forms a silicon-glass-silicon wafer comprising: and adopting an anodic bonding method to ground the first glass wafer, and negatively charge the first silicon wafer and the second silicon wafer, completing three-layer anodic bonding at high temperature and high pressure, and bonding the first glass wafer, the first silicon wafer and the second silicon wafer together.
In one embodiment, the bonded silicon-glass-silicon wafer is perforated using a laser drilling or etching process.
In one embodiment, bonding the atomic gas cell wafer and the second glass wafer to form a micro-cavity comprises: and connecting the second glass wafer with negative electricity by adopting an anodic bonding method, grounding the second silicon wafer layer of the atomic gas chamber wafer, and completing bonding at high temperature and high pressure to form a micro cavity.
In one embodiment, bonding a third glass wafer to the unsealed mechanism comprises: and connecting the third glass wafer with negative electricity by adopting an anodic bonding method, grounding the first silicon wafer layer of the unsealed mechanism, and finishing bonding under high temperature and high pressure.
In one embodiment, further comprising: and filling a certain amount of buffer gas in the bonding process of the third glass wafer and the unsealed mechanism.
The invention also aims to provide a miniature probe for detecting the microwave field intensity, which is manufactured by adopting the manufacturing method.
It is a further object of the present invention to provide a use of a microprobe for detecting microwave field intensity, wherein: the micro probe manufactured by the manufacturing method is used for detecting the microwave field intensity, the detection light irradiates into the atomic gas chamber through the left glass, the coupling light irradiates into the atomic gas chamber through the right glass, and the microwave irradiates into the atomic gas chamber through the upper surface.
As a specific embodiment, the probe for detecting the micro quantum field intensity seals a working substance and a buffer gas in a micro atomic gas chamber, and the atomic gas chamber is formed by sealing glass 1, a silicon wafer 2, glass 3, a silicon wafer 4 and glass 5. The thickness of the glass 3 is far greater than the thickness of the silicon wafers 2 and 4. The upper and lower surfaces of the atomic gas chamber are made of glass, so that the atomic gas chamber has good light transmission, and the front, the back, the left and the right sides of the atomic gas chamber also have good light transmission. The probe light is irradiated into the atomic gas cell through the glass on the left side, the coupling light is irradiated into the atomic gas cell through the glass on the right side, and the microwave is irradiated into the atomic gas cell through the upper surface.
As a specific embodiment, the manufacturing method of the miniature field strength probe comprises the following steps:
the method comprises the steps of firstly, placing a layer of thick glass sheet 3 wafer in the middle, placing two layers of thin silicon sheets 2 and 4 wafer on the upper surface and the lower surface of the glass sheet respectively, adopting an anodic bonding method, grounding the middle silicon sheet 3, connecting the upper glass sheet 2 and the lower glass sheet 4 with negative electricity, completing three layers of anodic bonding at high temperature and high pressure, and bonding the glass sheets 2 and 4 and the silicon sheet 3 together.
And secondly, designing the number, the size, the spacing and the like of holes on the bonded silicon 2-glass 3-silicon 4 wafer according to the size of the atomic gas chamber by adopting a laser drilling or etching method, and manufacturing a plurality of through holes on one wafer.
And step three, taking the silicon 2-glass 3-silicon 4 wafer as an upper layer, taking a glass sheet wafer 5 as a lower layer, connecting the glass sheet 5 with negative electricity, and grounding the silicon 4 to complete bonding of the silicon 4 and the glass sheet 5 to form a micro cavity, wherein the micro cavity is not sealed.
And step four, placing the working substance or the mixture of the working substances into each micro cavity.
And step five, bonding a glass sheet 1 and the silicon 2-glass 3-silicon 4-glass sheet 5 filled with the working substance, connecting the glass sheet 1 with negative electricity, connecting the silicon 2 with ground, filling a certain amount of buffer gas in the bonding process, bonding the glass sheet 1 and the silicon 2 together through high temperature and high pressure, and finally sealing the micro atomic gas chamber to form the sealed micro atomic gas chamber of the glass 1-silicon 2-glass 3-silicon 4-glass sheet 5.
And step six, cutting off each micro atomic gas chamber through scribing, and manufacturing the micro field intensity probe shown in the figure 1.
The invention achieves the following significant beneficial effects:
the realization is simple, include: placing a first glass wafer in the middle, and respectively placing a first silicon wafer and a second silicon wafer on the upper surface and the lower surface of the first glass wafer to form a silicon-glass-silicon wafer in a bonding mode; punching the bonded silicon-glass-silicon wafer, and designing the number, size and spacing of the holes on the wafer according to the size of the atomic gas chamber to form the atomic gas chamber wafer; taking the atomic gas chamber wafer as an upper layer, taking a second glass wafer as a lower layer, and bonding the atomic gas chamber wafer and the second glass wafer to form a micro cavity; filling a working substance or a mixture of the working substances into an atom gas chamber of the micro cavity to form an unsealed mechanism; bonding the third glass wafer with the unsealed mechanism to form a sealed mechanism; and cutting each atomic air chamber of the sealing mechanism by scribing to manufacture the miniature field intensity probe. The method is not limited by the frequency of a microwave field, an atomic steam chamber with small volume can be developed, and the method is applied to the detection of the microwave field intensity in a narrow space and solves the problem of limited application scene.
Any other suitable modifications can be made according to the technical scheme and the conception of the invention. All such alternatives, modifications and improvements as would be obvious to one skilled in the art are intended to be included within the scope of the invention as defined by the appended claims.
Claims (8)
1. A method for manufacturing a microprobe for detecting microwave field intensity, comprising:
placing a first glass wafer in the middle, respectively placing a first silicon wafer and a second silicon wafer on the upper surface and the lower surface of the first glass wafer, and bonding to form a silicon-glass-silicon wafer;
punching the bonded silicon-glass-silicon wafer, and designing the number, size and spacing of the holes on the wafer according to the size of the atomic gas chamber to form the atomic gas chamber wafer;
taking the atomic gas chamber wafer as an upper layer, taking a second glass wafer as a lower layer, and bonding the atomic gas chamber wafer and the second glass wafer to form a micro cavity;
filling a working substance or a mixture of the working substances into the atomic gas chamber of the micro cavity to form an unsealed mechanism;
bonding the third glass wafer with the unsealed mechanism to form a sealing mechanism;
and step six, cutting off each atomic air chamber of the sealing mechanism by scribing to manufacture the miniature field intensity probe.
2. A method of fabricating a microprobe for microwave field intensity detection according to claim 1, wherein: the bonding forms a silicon-glass-silicon wafer comprising: and adopting an anodic bonding method to ground the first glass wafer, and negatively charge the first silicon wafer and the second silicon wafer, completing three-layer anodic bonding at high temperature and high pressure, and bonding the first glass wafer, the first silicon wafer and the second silicon wafer together.
3. A method of fabricating a microprobe for microwave field intensity detection according to claim 2, wherein: and (3) perforating the bonded silicon-glass-silicon wafer by adopting a laser perforating or etching process.
4. A method of fabricating a microprobe for microwave field intensity detection according to claim 3, wherein: bonding the atomic gas chamber wafer and the second glass wafer to form a micro-cavity, comprising: and connecting the second glass wafer with negative electricity by adopting an anodic bonding method, grounding the second silicon wafer layer of the atomic gas chamber wafer, and completing bonding at high temperature and high pressure to form a micro cavity.
5. The method of claim 4 wherein bonding a third glass wafer to said unsealed mechanism comprises: and connecting the third glass wafer with negative electricity by adopting an anodic bonding method, grounding the first silicon wafer layer of the unsealed mechanism, and finishing bonding under high temperature and high pressure.
6. The method of claim 5, further comprising: and filling a certain amount of buffer gas in the bonding process of the third glass wafer and the unsealed mechanism.
7. A miniature probe for microwave field intensity detection, comprising: the method according to claim 1.
8. Use of a microprobe for the detection of microwave field strength, characterized in that: the microprobe manufactured by the method according to claim 1 is subjected to microwave field intensity detection, wherein probe light is irradiated into the atomic gas cell through the left glass, coupling light is irradiated into the atomic gas cell through the right glass, and microwaves are irradiated into the atomic gas cell through the upper surface.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011469432.9A CN112730991A (en) | 2020-12-14 | 2020-12-14 | Miniature probe for microwave field intensity detection, manufacturing method and application |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011469432.9A CN112730991A (en) | 2020-12-14 | 2020-12-14 | Miniature probe for microwave field intensity detection, manufacturing method and application |
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| CN112730991A true CN112730991A (en) | 2021-04-30 |
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Citations (6)
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|---|---|---|---|---|
| US3900382A (en) * | 1974-11-01 | 1975-08-19 | Gen Electric | Miniature probe containing multifunctional electrochemical electrodes |
| CN103941576A (en) * | 2014-04-10 | 2014-07-23 | 中国电子科技集团公司第三十八研究所 | Atom gas cavity device based on MEMS technology and manufacturing method thereof |
| CN105712282A (en) * | 2016-03-14 | 2016-06-29 | 成都天奥电子股份有限公司 | MEMS (micro-electromechanical systems) atom air chamber applicable to orthogonal optical pumping and detection and preparing method of MEMS (micro-electromechanical systems) atom air chamber |
| CN107840305A (en) * | 2017-11-13 | 2018-03-27 | 北京无线电计量测试研究所 | A kind of preparation method of the MEMS Atom-Cavities of chip atomic clock |
| WO2019153162A1 (en) * | 2018-02-07 | 2019-08-15 | 北京先通康桥医药科技有限公司 | Linear mems sensor array, palpation probe, and manufacturing method thereof |
| CN110759314A (en) * | 2019-11-02 | 2020-02-07 | 中北大学 | Preparation method of alkali metal atom micro air chamber based on MEMS (micro-electromechanical systems) process |
-
2020
- 2020-12-14 CN CN202011469432.9A patent/CN112730991A/en active Pending
Patent Citations (6)
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|---|---|---|---|---|
| US3900382A (en) * | 1974-11-01 | 1975-08-19 | Gen Electric | Miniature probe containing multifunctional electrochemical electrodes |
| CN103941576A (en) * | 2014-04-10 | 2014-07-23 | 中国电子科技集团公司第三十八研究所 | Atom gas cavity device based on MEMS technology and manufacturing method thereof |
| CN105712282A (en) * | 2016-03-14 | 2016-06-29 | 成都天奥电子股份有限公司 | MEMS (micro-electromechanical systems) atom air chamber applicable to orthogonal optical pumping and detection and preparing method of MEMS (micro-electromechanical systems) atom air chamber |
| CN107840305A (en) * | 2017-11-13 | 2018-03-27 | 北京无线电计量测试研究所 | A kind of preparation method of the MEMS Atom-Cavities of chip atomic clock |
| WO2019153162A1 (en) * | 2018-02-07 | 2019-08-15 | 北京先通康桥医药科技有限公司 | Linear mems sensor array, palpation probe, and manufacturing method thereof |
| CN110759314A (en) * | 2019-11-02 | 2020-02-07 | 中北大学 | Preparation method of alkali metal atom micro air chamber based on MEMS (micro-electromechanical systems) process |
Non-Patent Citations (2)
| Title |
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| 李新坤等: "芯片级铷原子气室的制备", 《中国科学:信息科学》 * |
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