CN112728791A - Process for preparing broad light-absorbing thermal film structure containing single-layer or multi-layer nano metal thin layer - Google Patents
Process for preparing broad light-absorbing thermal film structure containing single-layer or multi-layer nano metal thin layer Download PDFInfo
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- CN112728791A CN112728791A CN202011469317.1A CN202011469317A CN112728791A CN 112728791 A CN112728791 A CN 112728791A CN 202011469317 A CN202011469317 A CN 202011469317A CN 112728791 A CN112728791 A CN 112728791A
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- 239000010410 layer Substances 0.000 title claims abstract description 72
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 18
- 239000002184 metal Substances 0.000 title claims abstract description 18
- 239000002356 single layer Substances 0.000 title claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 title description 2
- 239000002923 metal particle Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910052755 nonmetal Inorganic materials 0.000 claims abstract description 13
- 238000005516 engineering process Methods 0.000 claims abstract description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 9
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 8
- 239000002245 particle Substances 0.000 claims abstract description 8
- 238000001228 spectrum Methods 0.000 claims abstract description 7
- 238000010521 absorption reaction Methods 0.000 claims abstract description 5
- 238000002834 transmittance Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000006104 solid solution Substances 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 239000002270 dispersing agent Substances 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 125000006850 spacer group Chemical group 0.000 claims 1
- 230000031700 light absorption Effects 0.000 abstract description 9
- 239000011521 glass Substances 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000004753 textile Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 28
- 238000004528 spin coating Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S70/00—Details of absorbing elements
- F24S70/20—Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption
- F24S70/25—Coatings made of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/40—Solar thermal energy, e.g. solar towers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Thermal Sciences (AREA)
- Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Combustion & Propulsion (AREA)
- General Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Laminated Bodies (AREA)
Abstract
The invention relates to a widely applicable green light-absorbing thermal nano metal film structure technology, which is a light-absorbing thermal film structure technology for adding a single-layer or multi-layer nano metal particle thin layer on a metal or nonmetal substrate or film. The light-absorbing thermal film structure mainly comprises a substrate, a nano metal particle layer, a metal oxide or other high-transmittance nonmetal separating covering layers and the like. The middle of the multilayer nano metal particle layers is provided with a metal oxide or other high-transmittance nonmetal separating covering layers as isolating layers, and the material of each layer of nano metal particles is matched with the particle size and the layer thickness in a calculation way, so that the high-efficiency full-spectrum absorption effect is achieved. The invention can be widely applied to the surface of a substrate or a base layer made of metal, glass, textile, organic film, semiconductor material and the like, and can be used as a light absorption heat film, a reflection reduction film and a heat insulation film or has the function of stealth.
Description
Technical Field
The invention belongs to the technical field of nano materials, microelectronics, light absorption thermal function materials and new energy, and mainly relates to a widely applicable green light absorption thermal nano metal film structure technical process.
Background
The development and utilization of solar energy are the most important ways for solving the energy crisis and the environmental crisis. The development of an economic and applicable green high-efficiency full-spectrum light absorption thermal film structure process technology is one of key technologies and links for widely utilizing solar energy. Meanwhile, the problems of antireflection of the smooth surface of the metal surface and other light-absorbing heat material structures, the invisibility of modern military weapons and personnel, heat-absorbing infrared and the like are all lack of a new efficient and widely applicable technical method.
After more than ten years of theoretical and experimental exploration, the inventor has completed basic theoretical logics of photothermal spectrum decomposition, absorption, transflectance and synthesis of solar full spectrum and related technical process and design innovation. As one of the innovations, the present invention is a process for forming a broad light absorbing thermal thin film structure comprising a single or multiple layers of nano-metal particles, and is based on the object of solving the above-mentioned problems. The light absorption thermal film structure process technology can be widely applied to the surface of a substrate or a base layer made of metal, glass, textile, organic films, semiconductor materials and the like, and can be used as a light absorption thermal film, a reflection reducing film and a heat insulation film or has the function of stealth.
Disclosure of Invention
The invention relates to a widely applicable green light-absorbing thermal nano metal film structure technology, which is a light-absorbing thermal film structure technology for adding a single-layer or multi-layer nano metal particle thin layer on a metal or nonmetal substrate or film. The light-absorbing thermal film structure mainly comprises a substrate, a nano metal particle layer, a metal oxide or other high-transmittance nonmetal separating covering layers and the like.
The nano metal grain layer in the structure can be any one of common harmless metals such as copper, aluminum, iron, nickel, zinc, manganese, tantalum, titanium, chromium, zirconium and the like, and the grain diameter is 1nm to 500 nm. The nano metal particle layer can be a plurality of layers, the middle part of the nano metal particle layer is provided with a metal oxide or other high-transmissivity nonmetal separating covering layer as an isolating layer, and the material, the particle size and the layer thickness of each layer of nano metal particles can be matched so as to achieve the high-efficiency full-spectrum absorption effect. Meanwhile, the nano metal particle layer is uniformly coated on the substrate or the base layer film or the isolating layer film at a proper plane coverage rate. The nano metal particle dispersing agent can be water, ethanol and other completely volatile solvents, and the dispersing solvent can also comprise a transparent non-volatile organic film forming agent, a nano metal particle layer of a transparent organic film forming agent and an organic nano metal particle layer forming stable solid solution.
The metal oxide or other high-transmissivity nonmetal separating covering layer in the structure can be made of silicon dioxide, aluminum oxide, zirconium oxide, tantalum oxide, silicon nitride, silicon and the like.
The thickness of each single-layer film of the light-absorbing thermal film structure is 0.01nm to 10 mu m. If the light-absorbing thermal film structure is formed by only 1 transparent solid-solution organic nano-metal particle layer, the thickness of the organic nano-metal particle layer can be up to 2-5 mm at most.
The light absorption thermal film structure process technology can be widely applied to the surface of a substrate or a base layer made of metal, glass, textiles, organic films, semiconductor materials and the like, and can be used as a light absorption thermal film, a reflection reducing film and a heat insulation film or has the function of stealth.
Detailed description of the invention
The invention relates to a widely applicable green light absorption heat nanometer metal film structure technical process. The structure of the device is mainly formed by overlapping a substrate, a nano metal particle layer, a metal oxide or other high-transmissivity nonmetal separating covering layers and the like, and the industrialization process is relatively easy to control and realize. The nano metal layer can be completed by spin coating and proper heat treatment, other film layers can be completed by physical vapor deposition or sputtering deposition under vacuum condition, and some films can also be completed by chemical coating process.
The following examples further illustrate the practice of the invention:
take stainless steel substrate or glass substrate or PMMA plastic film substrate or crystal silicon substrate as an example. Firstly, the substrate is physically cleaned and dried, then an alumina cushion layer with the thickness of 0.1-50 nm can be added by using a film coating method such as electron beam evaporation and the like, nano copper aqueous dispersion liquid which is corresponding to the appropriate nano copper grain plane coverage rate and determines the copper grain diameter is coated by using a spin coating method, after the vacuum thermal evaporation and drying treatment, a silicon dioxide separation covering layer with the thickness of 1-300nm is deposited by using a film coating method such as electron beam evaporation and the like, and annealing treatment is carried out. If the nano metal particle layer is of a multi-layer structure, on the premise of determining the matching particle size and the film thickness, repeatedly spin-coating the nano copper particle layer and the silicon dioxide separation covering layer and carrying out annealing treatment.
The foregoing is illustrative of the present invention and is not to be construed as limiting thereof in any way. All matters contained in the claims and the description are intended to be embraced by the scope of the present invention.
Claims (7)
1. A broad-spectrum light-absorbing thermal film structure process containing single-layer or multi-layer nano metal particle layer is characterized by that on the metal or non-metal base or film a full-spectrum light-absorbing thermal film structure technology process of single-layer or multi-layer nano metal particle thin layer and separation covering layer is added, said light-absorbing thermal film structure mainly is formed from substrate, nano metal particle layer, metal oxide or other high-transmissivity non-metal separation covering layer, and the thickness of every single-layer film of said light-absorbing thermal film structure is 0.01 nm-10 micrometers.
2. The process according to claim 1, wherein a metal or non-metal base layer film or a substrate film is provided between the substrate or the base layer and the nano metal particle layer.
3. The process of claim 1, wherein the nano-metal particles are multi-layered, and the intermediate layer is a metal oxide or other high-transmittance non-metal separating cover layer, and the material of each layer of nano-metal particles is precisely matched with the particle size and layer thickness to achieve high-efficiency full-spectrum absorption; and the nano metal particle layer is uniformly coated on the substrate or the base layer film or the isolating layer film with proper plane coverage rate.
4. The process of claim 1, wherein the nano-metal particle dispersing agent of the nano-metal particle layer is water, ethanol or other harmless solvent which is completely volatile, and the dispersing solvent also comprises transparent non-volatile harmless organic film forming agent, nano-metal particle layer of transparent organic film forming agent, and forms stable solid solution organic nano-metal particle layer.
5. A broad absorption thermal film structure process as claimed in claim 1, wherein the nano metal particles of the nano metal particle layer are any one of the metals of copper, aluminum, iron, nickel, zinc, manganese, tantalum, titanium, chromium, zirconium, etc. with a particle size of 1nm to 500 nm.
6. A broad light absorbing thermal film structure process comprising one or more nanometal particle layers as claimed in claim 1 wherein the metal oxide or other high transmittance non-metal spacer cap layer of the nanometal particle layers is selected from the group consisting of silicon dioxide, aluminum oxide, zirconium oxide, tantalum oxide, silicon nitride, silicon, etc.
7. The process of claim 1, wherein the thickness of the organic nano metal particle layer is 2-5 mm at most if only 1 transparent solid solution organic nano metal particle layer is used for the light-absorbing thermal film structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011469317.1A CN112728791A (en) | 2020-12-14 | 2020-12-14 | Process for preparing broad light-absorbing thermal film structure containing single-layer or multi-layer nano metal thin layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011469317.1A CN112728791A (en) | 2020-12-14 | 2020-12-14 | Process for preparing broad light-absorbing thermal film structure containing single-layer or multi-layer nano metal thin layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112728791A true CN112728791A (en) | 2021-04-30 |
Family
ID=75599843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011469317.1A Pending CN112728791A (en) | 2020-12-14 | 2020-12-14 | Process for preparing broad light-absorbing thermal film structure containing single-layer or multi-layer nano metal thin layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112728791A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007041374A1 (en) * | 2007-08-30 | 2009-03-05 | o.m.t. Oberflächen- und Materialtechnologie GmbH | Producing quantum structures and/or continuous nano-metal islands on substrate for bipolar plates, by cleaning substrate surface from impurities and/or oxide layers, structuring and then depositing active atomic- and/or molecular clusters |
| CN103162452A (en) * | 2013-03-05 | 2013-06-19 | 日出东方太阳能股份有限公司 | Inoxidizability solar spectrum selective absorbing coating and preparation method thereof |
| CN106091444A (en) * | 2016-06-06 | 2016-11-09 | 南宁可煜能源科技有限公司 | A kind of coating for selective absorption of sunlight spectrum |
| CN108611610A (en) * | 2016-12-02 | 2018-10-02 | 北京有色金属研究总院 | A kind of dual dielectric layer selective solar spectrum absorbing membrane and preparation method thereof |
-
2020
- 2020-12-14 CN CN202011469317.1A patent/CN112728791A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007041374A1 (en) * | 2007-08-30 | 2009-03-05 | o.m.t. Oberflächen- und Materialtechnologie GmbH | Producing quantum structures and/or continuous nano-metal islands on substrate for bipolar plates, by cleaning substrate surface from impurities and/or oxide layers, structuring and then depositing active atomic- and/or molecular clusters |
| CN103162452A (en) * | 2013-03-05 | 2013-06-19 | 日出东方太阳能股份有限公司 | Inoxidizability solar spectrum selective absorbing coating and preparation method thereof |
| CN106091444A (en) * | 2016-06-06 | 2016-11-09 | 南宁可煜能源科技有限公司 | A kind of coating for selective absorption of sunlight spectrum |
| CN108611610A (en) * | 2016-12-02 | 2018-10-02 | 北京有色金属研究总院 | A kind of dual dielectric layer selective solar spectrum absorbing membrane and preparation method thereof |
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