CN112724897A - Light epoxy resin composition for semiconductor packaging - Google Patents
Light epoxy resin composition for semiconductor packaging Download PDFInfo
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- CN112724897A CN112724897A CN202011539332.9A CN202011539332A CN112724897A CN 112724897 A CN112724897 A CN 112724897A CN 202011539332 A CN202011539332 A CN 202011539332A CN 112724897 A CN112724897 A CN 112724897A
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/08—Macromolecular additives
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/14—Polymer mixtures characterised by other features containing polymeric additives characterised by shape
- C08L2205/18—Spheres
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
The invention provides a light epoxy resin composition for semiconductor encapsulation, which comprises the following components in parts by weight: 4-25 parts of epoxy resin A; 4-25 parts of a curing agent B; 0.02-3 parts of accelerator C; 10-89 parts of inorganic filler D; 0.05-3 parts of a release agent E; 0.01-3 parts of coupling agent F; 0.01-3 parts of high-temperature expansion microspheres G; 0.1-0.5 part of carbon black. The invention has the following technical effects: after being formed and post-cured for 4-8 hours at 175 ℃, the weight of the molded product can be reduced by 7.76-9.6 percent compared with the weight of the conventional plastic packaging material, and the molded product is particularly suitable for semiconductor packaging devices with important requirements.
Description
Technical Field
The invention relates to a light epoxy resin composition for semiconductor packaging, belonging to the technical field of thermosetting plastics, and further belonging to the technical field of epoxy molding compounds.
Background
In recent years, the demand for lightweight electronic products has been increasing, and most developers have solved the problem from the viewpoint of design and packaging processes, and no research on light epoxy resin compositions for semiconductor packaging has been found after examining domestic and foreign data.
Patent CN110218418A discloses a preparation method and application of a light epoxy resin composite material. The patent adopts epoxy resin as a matrix material and polymer expanded beads (thermoplastic polyurethane expanded beads) as fillers to prepare the elastomer with light weight, high resilience and excellent mechanical property, aims to introduce expanded polyurethane to replace an epoxy resin product so as to reduce the density of the epoxy resin, and does not belong to the field of semiconductor packaging.
Patent CN110408238A discloses a modification method of hollow glass beads for preparing a light epoxy resin-polyurethane composite material, which aims to enhance the mechanical strength of the composite material and does not belong to the field of semiconductor packaging.
Patent CN105566857B discloses a light epoxy resin composite material, which is made of expandable epoxy resin mixture and metal-plated foam, and has the advantages of low density, high mechanical strength, low resistivity, excellent electromagnetic shielding performance, etc., and is not suitable for semiconductor packaging due to its electric conductivity.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a light epoxy resin composition for semiconductor packaging.
The technical scheme of the invention is as follows:
a light epoxy resin composition for semiconductor encapsulation comprises the following components in parts by weight:
4-25 parts of epoxy resin A;
4-25 parts of a curing agent B;
0.02-3 parts of accelerator C;
10-89 parts of inorganic filler D;
0.05-3 parts of a release agent E;
0.01-3 parts of coupling agent F;
0.01-3 parts of high-temperature expansion microspheres G;
0.1-0.5 part of carbon black;
the epoxy resin can be one or more of phenolic aldehyde type epoxy resin, bisphenol A type structure epoxy resin, biphenyl type structure epoxy resin, naphthalene type structure epoxy resin, o-cresol type structure epoxy resin, DCPD type structure epoxy resin, polyfunctional group structure epoxy resin, alicyclic epoxy resin and the like.
The curing agent can be one or more of linear phenolic resin, XY-lock type phenolic resin, bisphenol A type phenolic resin, DCPD type phenolic resin, biphenyl type phenolic resin or polyfunctional phenolic resin.
The accelerator generally determines the resin crosslinking structure, reaction process and conditions, and the type of accelerator is as follows: the curing accelerator is one or more of organic phosphorus compounds, imidazole compounds, tertiary amine compounds and derivatives thereof.
The inorganic filler generally determines the mechanical properties of the material, such as strength, density, thermal conductivity and water absorption, and can be one or more of crystalline or fused angle or fused sphere silica powder, titanium dioxide powder, alumina powder and magnesia powder.
The release agent is one or a combination of more of synthetic waxes such as mineral wax, vegetable wax, polyethylene or polyamide wax and the like.
The coupling agent is an organic silane coupling agent.
The high-temperature expanded microsphere consists of a polymer shell and an unstable inner core, is white powder in appearance, starts to expand at the softening point of the shell of 140-165 ℃, and has the diameter of 4-6 times of the original diameter after expansion. The particle size of the microsphere is 20um-30um before expansion and 70um-75um after expansion;
the high-temperature expanded microsphere is subjected to surface treatment by using a coupling agent, and the specific surface treatment method comprises the following steps: and stirring and mixing the high-temperature expanded microspheres and the gamma-aminopropyltriethoxysilane at a high speed to obtain the surface-treated high-temperature expanded microspheres.
Preferably, the first and second electrodes are formed of a metal,
during surface treatment, the stirring time is half an hour, the stirring speed is 2000rpm/min, and the weight ratio of the high-temperature expanded microspheres to the gamma-aminopropyltriethoxysilane is 1000: 5-7.
The light epoxy resin composition for semiconductor encapsulation comprises the following components in parts by weight:
4.2 parts of epoxy resin A;
4.2 parts of curing agent B;
0.21 part of accelerator C;
72.1 parts of inorganic filler D;
0.18 part of release agent E;
0.165 part of coupling agent F;
0.4-0.6 part of high-temperature expanded microspheres G;
0.32 part of carbon black.
The preparation method of the epoxy resin composition comprises but is not limited to heating and mixing by processing equipment such as a two-roll open mill, a single-screw extruder, a double-screw extruder, a kneader, a stirrer and the like.
The invention has the following technical effects: after being formed and post-cured for 4-8 hours at 175 ℃, the weight of the molded product can be reduced by 7.76-9.6 percent compared with the weight of the conventional plastic packaging material, and the molded product is particularly suitable for semiconductor packaging devices with important requirements.
Detailed Description
The sources of materials used in the examples of the invention and comparative examples are as follows:
epoxy resin A: o-cresol type (purchased from Yueyang petrochemical)
Curing agent B: phenol-formaldehyde linear (from Shandong Shengquan resin)
Accelerator C: 2-methylimidazole (available from four nations);
inorganic filler D: fused sphere silica (available from Jiangsu Union);
and (3) release agent E: carnauba wax (a tree brand);
coupling agent F: propylpropylethertrimethoxysilane, gamma-aminopropyltriethoxysilane (available from Jiangsu Chenguang);
161D, expansion temperature is more than 140 ℃, the particle size before expansion is 20 +/-5 um, and the particle size after expansion is 75 +/-5 um (purchased from Beijing Hu jin science and technology Limited company).
Example 1 surface treatment Process of high-temperature expanded microspheres G
Weighing 10Kg 161D, adding into a GH-50B high-speed mixer, adding 50g of propyl ether trimethoxy silane, stirring at a high speed of 2000rpm/min for 30 minutes, and discharging to obtain No. 1 high-temperature expanded microspheres.
Example 2 surface treatment Process of high-temperature expanded microspheres G
Weighing 10Kg 161D, adding into a GH-50B high-speed mixer, adding 70g of propyl ether trimethoxy silane, stirring at a high speed of 2000rpm/min for 30 minutes, and discharging to obtain No. 2 high-temperature expanded microspheres.
Example 3 surface treatment Process of high temperature expanded microspheres G
Weighing 10Kg 161D, adding into a GH-50B high-speed mixer, adding 50g of gamma-aminopropyltriethoxysilane, stirring at 2000rpm/min for 30 minutes, and discharging to obtain No. 3 high-temperature expanded microspheres.
Example 4 surface treatment Process of high-temperature expanded microspheres G
Weighing 10Kg 161D, adding into a GH-50B high-speed mixer, adding 70g of gamma-aminopropyltriethoxysilane, stirring at 2000rpm/min for 30 minutes, and discharging to obtain No. 4 high-temperature expanded microspheres.
Comparative example 1 epoxy resin composition, examples 5 to 9 preparation of light epoxy resin composition for semiconductor encapsulation and Process
The formulations of the epoxy resin composition of comparative example 1 and the light epoxy resin compositions for semiconductor encapsulation of examples 5 to 9 are shown in Table 1.
The comparative example 1 did not contain the high temperature expanded microspheres.
Examples 5-9 contained high temperature expanded microspheres treated by different surface treatments.
The preparation process comprises the following steps: the components are crushed and mixed evenly by a crusher at room temperature, melted and mixed on an open rubber mixing mill, and then crushed and mixed to obtain the epoxy composition.
The evaluation results of the epoxy composition were evaluated mainly in the following ways, and are shown in table 1.
Gel time: the test conditions were: temperature: 175 ℃. Preheating an electric heating tray to 175 ℃, taking 2g-3g of materials to be placed on the tray, starting timing when the powder becomes fluid, gradually changing into gel state, timing by using a stopwatch, reading required time, repeating the same operation twice, and taking the average value. The gel time is a parameter for evaluating the curing speed.
Molding density: molding conditions are as follows: temperature: 175 ℃, pressure: 7.0MPa, pressure maintaining time: 110 s. The density of the molded sample was measured in g/cm3。
Spiral flow length: the test conditions were: temperature: 175 ℃, pressure: 7.0MPa, pressure maintaining time: 110 s. The spiral flow length is a parameter for evaluating fluidity, and a larger value indicates better fluidity in cm.
Bending property: the flexural modulus of the standard sample bar was measured in a universal tester, and the flexural modulus is a parameter for evaluating the bending resistance of the epoxy composition, and a small value indicates that the stress of the semiconductor device after packaging is small and has a unit of GPa.
Bonding strength: the bonding strength between the sample and the copper sheet is measured in a universal testing machine, and the larger the bonding strength is, the better the bonding performance between the epoxy resin composition and the copper sheet is, and the unit is GPa.
Tg test: the epoxy compositions were tested for Tg using TMA in units of ℃.
The epoxy resin composition ratios and test results are shown in table 1:
TABLE 1 compounding ratios of epoxy resin compositions and test results
As can be seen from the performance evaluation results of the above examples and comparative examples, the epoxy resin composition prepared by the comparative example of the present invention has the advantages of gelation, spiral, bending strength, adhesive strength, Tg which are not much different from those of the examples, but the weight of the epoxy resin composition after being post-cured at 175 ℃ for 4-8 hours after molding can be reduced by 1.1-9.6% compared with the common epoxy resin composition.
In addition, the high-temperature expanded microspheres and the gamma-aminopropyltriethoxysilane are stirred and mixed at a high speed, and the epoxy resin composition containing the high-temperature expanded microspheres adopting the surface treatment mode has better weight reduction effect, the weight reduction reaches 7.76-9.6%, and the unexpected technical effect is achieved.
The above description is only an example of the present invention and is not intended to limit the scope of the present invention, and all equivalent modifications made by the present invention as described in the specification of the present invention or directly or indirectly applied to other related technical fields are included in the scope of the present invention.
Claims (3)
1. A light epoxy resin composition for semiconductor encapsulation is characterized by comprising the following components in parts by weight:
4-25 parts of epoxy resin A;
4-25 parts of a curing agent B;
0.02-3 parts of accelerator C;
10-89 parts of inorganic filler D;
0.05-3 parts of a release agent E;
0.01-3 parts of coupling agent F;
0.01-3 parts of high-temperature expansion microspheres G;
0.1-0.5 part of carbon black;
the epoxy resin is one or more of phenolic aldehyde type epoxy resin, bisphenol A type structure epoxy resin, biphenyl type structure epoxy resin, naphthalene type structure epoxy resin, o-cresol type structure epoxy resin, DCPD type structure epoxy resin, polyfunctional group structure epoxy resin, alicyclic epoxy resin and the like;
the curing agent is one or more of linear phenolic resin, XY-lock type phenolic resin, bisphenol A type phenolic resin, DCPD type phenolic resin, biphenyl type phenolic resin or polyfunctional phenolic resin;
the curing accelerator is one or more of organic phosphorus compounds, imidazole compounds, tertiary amine compounds and derivatives thereof;
the inorganic filler is one or more of crystalline or fused angle or fused spherical silicon dioxide powder, titanium dioxide powder, alumina powder and magnesia powder;
the release agent is one or a combination of more of synthetic waxes such as mineral wax, vegetable wax, polyethylene or polyamide wax and the like;
the coupling agent is an organic silane coupling agent;
the high-temperature expanded microsphere consists of a polymer shell and an unstable inner core, is white powder in appearance, starts to expand at the softening point of the shell of 140-165 ℃, and has the diameter of 4-6 times of the original diameter after expansion; the particle size of the microsphere is 20um-30um before expansion and 70um-75um after expansion;
the high-temperature expanded microsphere is subjected to surface treatment by adopting a coupling agent, and the specific surface treatment method comprises the following steps: and stirring and mixing the high-temperature expanded microspheres and the gamma-aminopropyltriethoxysilane at a high speed to obtain the surface-treated high-temperature expanded microspheres.
2. The light-weight epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the surface treatment is carried out for a stirring time of half an hour at a stirring speed of 2000rpm/min at a weight ratio of the high-temperature expanded microspheres to the γ -aminopropyltriethoxysilane of 1000: 5-7.
3. The light epoxy resin composition for semiconductor encapsulation according to claim 1, comprising the following components in parts by weight:
4.2 parts of epoxy resin A;
4.2 parts of curing agent B;
0.21 part of accelerator C;
72.1 parts of inorganic filler D;
0.18 part of release agent E;
0.165 part of coupling agent F;
0.4-0.6 part of high-temperature expanded microspheres G;
0.32 part of carbon black.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114276652A (en) * | 2021-12-30 | 2022-04-05 | 江苏科化新材料科技有限公司 | Epoxy resin composition and application thereof, epoxy resin and preparation method and application thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106433038A (en) * | 2016-10-18 | 2017-02-22 | 北京中新泰合电子材料科技有限公司 | Epoxy resin composition for photoelectric coupler packaging and preparation method of epoxy resin composition |
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106433038A (en) * | 2016-10-18 | 2017-02-22 | 北京中新泰合电子材料科技有限公司 | Epoxy resin composition for photoelectric coupler packaging and preparation method of epoxy resin composition |
Non-Patent Citations (1)
Title |
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橡胶工业原材料与装备简明手册编审委员会: "《橡胶工业原材料与装备简明手册 原材料与工艺耗材分册》", 31 January 2019, 北京理工大学出版社 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114276652A (en) * | 2021-12-30 | 2022-04-05 | 江苏科化新材料科技有限公司 | Epoxy resin composition and application thereof, epoxy resin and preparation method and application thereof |
CN114276652B (en) * | 2021-12-30 | 2024-01-26 | 江苏中科科化新材料股份有限公司 | Epoxy resin composition and application thereof, epoxy resin and preparation method and application thereof |
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Address after: No.70, Meilan East Road, hailing Industrial Park, Taizhou City, Jiangsu Province 225300 Patentee after: Jiangsu Sinopec New Materials Co.,Ltd. Address before: No.70, Meilan East Road, hailing Industrial Park, Taizhou City, Jiangsu Province 225300 Patentee before: Jiangsu Kehua New Material Technology Co.,Ltd. |
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