CN112713409B - Selective wave-absorbing surface structure and preparation method thereof - Google Patents
Selective wave-absorbing surface structure and preparation method thereof Download PDFInfo
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- CN112713409B CN112713409B CN202011331165.9A CN202011331165A CN112713409B CN 112713409 B CN112713409 B CN 112713409B CN 202011331165 A CN202011331165 A CN 202011331165A CN 112713409 B CN112713409 B CN 112713409B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
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Abstract
The invention discloses a selective wave-absorbing surface structure and a preparation method thereof, wherein the surface structure comprises a frequency selection structure, at least one reflection structure and an enhancement structure; wherein the reflecting structure is positioned below the frequency selecting structure, and the enhancing structure is positioned below the reflecting structure. According to the invention, the reflecting structure capable of reflecting the electromagnetic waves with the non-working frequency leaked by the frequency selection structure is arranged between the frequency selection structure and the reinforcing structure, and the corresponding micro structure is arranged, so that the selective absorption of the working frequency is enhanced, and the electromagnetic waves with the non-working frequency are prevented from entering a target object.
Description
Technical Field
The invention belongs to the technical field of radar wave absorption, and particularly relates to a selective wave absorption surface structure and a preparation method thereof.
Background
Along with the improvement of radar stealth demand, stealth wave-absorbing technology of radome is receiving much attention, and the radome needs to satisfy stealth demand on the one hand, namely the high reflection demand to the electromagnetic wave, on the other hand needs to satisfy operating frequency's ripples requirement of inhaling, namely the demand to the electromagnetic wave high absorption of operating frequency channel.
At present, two solutions for the composite requirements of stealth and wave absorption of the radome exist, one method is to research and develop a new material, and various elements are doped in the material to realize the stealth wave absorption requirements of the composite material, but the research and development difficulty of the method is high, the cost is high, and the method is not applied in a large scale at present. In another method, multilayer materials are adopted to solve the problem of stealth wave absorption, and the frequency selection and the enhancement are respectively carried out on electromagnetic waves through a multilayer structure so as to obtain high anti-reflection of working frequency and realize stealth performance.
However, the frequency selective layer of this type has a certain transmittance, and cannot completely filter out electromagnetic waves of non-operating frequencies, and thus has a problem of poor stealth effect.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a selective wave-absorbing surface structure and a preparation method thereof. The technical problem to be solved by the invention is realized by the following technical scheme:
a selective wave absorbing surface structure comprising:
the frequency selection structure is used for transmitting the electromagnetic wave of the working frequency and reflecting the electromagnetic wave of the first non-working frequency;
the reflection structure is positioned below the frequency selection structure, and reflection microstructures in aperiodic distribution are arranged on the surface of a reflection layer of the reflection structure, which is close to the frequency selection structure;
the reinforcing structure is used for reinforcing the intensity of the electromagnetic wave of the working frequency, the reinforcing structure is positioned below the reflecting structure, and periodically distributed reinforcing microstructures are arranged on the surface, close to the reflecting structure, of the reinforcing layer of the reinforcing structure.
In one embodiment of the invention, the difference between the refractive index of the intermediate layer of the reflective structure for the operating frequency and the refractive index of the reflective layer of the reflective structure for the operating frequency is less than 0.5, and the difference between the refractive index of the intermediate layer of the reflective structure for the second non-operating frequency and the refractive index of the reflective layer of the reflective structure for the second non-operating frequency is greater than 2.
In one embodiment of the present invention, the reflective microstructure includes a plurality of structural units in a spherical crown shape, and a pitch of the structural units is greater than a reciprocal of an operating frequency.
In one embodiment of the present invention, the reinforcing microstructure monomers of the reinforcing structure are convex cone-shaped, and the spacing of the structural monomers is less than 1/4 which is the reciprocal of the working frequency.
In one embodiment of the present invention, the frequency selective structure is provided with a frequency selective microstructure, a structural monomer pitch of the frequency selective microstructure is greater than a structural monomer pitch of the reflective microstructure, and the structural monomer pitch of the reflective microstructure is greater than a structural monomer pitch of the reinforcing microstructure.
One embodiment of the present invention further provides a method for preparing a selective wave-absorbing surface structure, comprising the following steps:
preparing a frequency selection structure, wherein the frequency selection structure is used for transmitting electromagnetic waves of working frequency and reflecting electromagnetic waves of first non-working frequency;
preparing at least one reflecting structure and an enhancing structure, wherein the reflecting structure is used for transmitting the electromagnetic wave with the working frequency and reflecting the electromagnetic wave with a second non-working frequency transmitted by the frequency selecting structure, and the enhancing structure is used for enhancing the intensity of the electromagnetic wave with the working frequency;
processing reflection microstructures in aperiodic distribution on the surface, close to the frequency selection structure, of the reflection layer of the reflection structure by adopting ultrafast laser, and processing enhancement microstructures in periodic distribution on the surface, close to the reflection structure, of the enhancement layer of the enhancement structure;
the frequency selective structure is bonded above the reflective structure and the enhancement structure is bonded below the reflective structure.
In an embodiment of the present invention, the process of preparing the frequency selective structure includes the following steps:
plating a first intermediate layer on the first medium layer by adopting a film plating process;
plating a frequency selection layer on the first intermediate layer by adopting a plating process;
and processing a frequency selection microstructure on the surface of the first intermediate layer far away from the frequency selection layer by using an ultrafast laser.
In one embodiment of the invention, the process of preparing at least one reflective structure and one reinforcing structure comprises the steps of:
plating a second intermediate layer on the second medium layer by adopting a film plating process;
plating a reflecting layer on the second intermediate layer by adopting a plating process;
processing a reflection microstructure in non-periodic distribution on the surface of the second intermediate layer far away from the reflection layer by adopting an ultrafast laser processing technology, so that a structural monomer of the reflection microstructure is in a spherical crown shape and the spacing between the structural monomer and the reflection microstructure is greater than the reciprocal of the working frequency;
plating an enhancement layer on the surface of the wave-absorbed object by adopting a film coating process;
processing the reinforced microstructures which are periodically distributed on the surface of the reinforced layer by adopting an ultrafast laser processing technology, so that the structural monomers of the reinforced microstructures are in a convex cone shape, and the period of the structural monomers is less than 1/4 of the reciprocal of the working frequency;
plating a third intermediate layer on the surface of the enhancement layer with the enhancement microstructure by adopting a plating process;
and plating the third intermediate layer on the surface of the second medium layer far away from the second intermediate layer by adopting a plating process.
In one embodiment of the present invention, when the material of the reinforcing layer is aluminum, the method further comprises the steps of:
heating the reinforcing layer with the reinforcing microstructure in an environment of 60-80 ℃ to generate an AAO film;
3-6 wt% of H is prepared3PO4Heating the solution to 40-60 ℃, and putting the enhancement layer into the solution for 5-10 minutes;
according to anhydrous SnCl4Mixing with deionized water at a ratio of 1:4, heating to 40-60 deg.C, and adding the reinforcing layer into the solution;
the reinforcement layer was removed and rinsed with 5 wt% HCL, then with deionized water.
In another embodiment of the present invention, when the material of the reinforcing layer is copper, the method further comprises the steps of:
and putting the enhancement layer with the enhancement microstructure into a high-temperature atmosphere, heating to the temperature of 300-500 ℃, and preserving heat for 1-3 hours.
The invention has the beneficial effects that:
according to the invention, the reflecting structure capable of reflecting the electromagnetic waves with the non-working frequency leaked by the frequency selection structure is arranged between the frequency selection structure and the reinforcing structure, and the corresponding micro structure is arranged, so that the selective absorption of the working frequency is enhanced, the electromagnetic waves with the non-working frequency are prevented from entering a target object, and the stealth effect can be improved.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of a selective wave-absorbing surface structure provided in an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of another selective wave-absorbing surface structure provided in an embodiment of the invention;
FIG. 3 is a schematic flow chart of a method for preparing a selective wave-absorbing surface structure according to an embodiment of the present invention;
fig. 4 a-4 d are schematic process diagrams of a method for preparing a selective wave-absorbing surface structure according to an embodiment of the present invention.
Description of reference numerals:
frequency selection structure-10; reflective structure-20; -a reinforcing structure-30; frequency selective layer-101; a first intermediate layer-102; a first dielectric layer-103; frequency selection microstructure-104; an intermediate layer-201; a reflective layer-202; a second intermediate layer-203; a reflective microstructure-204; a second dielectric layer-301; a third intermediate layer-302; enhancement layer-303; reinforcing microstructure-304.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1, fig. 1 is a schematic structural diagram of a selective wave-absorbing surface structure according to an embodiment of the present invention. The embodiment of the invention provides a selective wave-absorbing surface structure, which comprises: a frequency selective structure 10, at least one reflecting structure 20 and an enhancing structure 30, wherein the frequency selective structure 10 is located on the reflecting structure 20, the reflecting structure 20 is located on the enhancing structure 30, in addition, when the number of the reflecting structures 20 is two or more, the reflecting structures 20 are disposed between the frequency selective structure 10 and the reinforcing structure 30 in a stacked manner, the frequency selective structure 10 can transmit the electromagnetic wave of the operating frequency, while also being capable of reflecting electromagnetic waves at a first, non-operating frequency, the reflective structure 20 being capable of transmitting electromagnetic waves at an operating frequency, while also being capable of reflecting electromagnetic waves of a second non-operating frequency transmitted through the frequency selective structure 10, the reinforcing structure 30 is capable of reinforcing the intensity of electromagnetic waves of the operating frequency, meanwhile, the electromagnetic wave with the working frequency after the intensity is enhanced can be transmitted to a hidden object, such as a radome, the electromagnetic wave with the enhanced intensity and the working frequency is the signal with the working frequency amplified.
In this embodiment, the frequency selective structure 10 can reflect and filter most of the electromagnetic waves with the non-operating frequency (i.e. the electromagnetic waves with the first non-operating frequency), but there are some electromagnetic waves with the non-operating frequency (i.e. the electromagnetic waves with the second non-operating frequency) close to the frequency of the electromagnetic waves with the operating frequency that transmit through the frequency selective structure 10, and at this time, if these electromagnetic waves with the second non-operating frequency that transmit through the frequency selective structure 10 enter the concealed object, the concealed effect of the concealed object will be affected, so the electromagnetic waves with the second non-operating frequency that transmit through the frequency selective structure 10 can be reflected by the reflection structure 20, so that the electromagnetic waves with the second non-operating frequency can be prevented from entering the concealed object, and in addition, the effect of reflecting as many electromagnetic waves with the second non-operating frequency as possible can be achieved by providing the reflection structures 20, the reflection effect of the electromagnetic wave of the second non-operating frequency is enhanced, wherein the number of the reflection structures 20 may be selectively set according to the electromagnetic wave of the second non-operating frequency, which is not specifically limited in this embodiment, for example, the number of the reflection structures 20 is 1, 2, 3, or other numbers. After the reflection structure 20 reflects the electromagnetic wave of the second non-operating frequency, only the electromagnetic wave of the operating frequency penetrates through the reflection structure 20 and enters the reinforcing structure 30, and the reinforcing structure 30 reinforces the electromagnetic wave of the operating frequency, so that the reinforced electromagnetic wave of the operating frequency can penetrate through the reinforcing structure 30 and enter the concealed object, thereby achieving the concealed effect.
Referring to fig. 2, fig. 2 is a schematic structural diagram of another selective wave-absorbing surface structure provided in the embodiment of the present invention. For example, in one implementation, the frequency selective structure 10 may include a frequency selective layer 101, a first intermediate layer 102, and a first dielectric layer 103, wherein the frequency selective layer 101 is located on the first intermediate layer 102, the first intermediate layer 102 is located on the first dielectric layer 103, and the frequency selective layer 101 is capable of transmitting electromagnetic waves at an operating frequency and reflecting electromagnetic waves at a first non-operating frequency.
Further, a frequency-selective microstructure 104 is disposed on a surface of the frequency-selective layer 101 away from the first intermediate layer 102, and the frequency-selective microstructure 104 can further transmit the electromagnetic wave of the operating frequency and reflect the electromagnetic wave of the first non-operating frequency.
Preferably, the thickness of the frequency selective layer 101 is in the range of 0 to 1 mm.
Preferably, the shape of the frequency-selective microstructure 104 may be square or circular, or may be a combination of square and circular, and the frequency-selective microstructure 104 may also be other shapes, which is not specifically limited in this embodiment.
Preferably, the width range of the frequency-selective microstructure 104 is 0-10 mm, and the distance range between two adjacent frequency-selective microstructures 104 is 0-10 mm.
Preferably, the thickness of the frequency-selective microstructure 104 ranges from 0mm to 1 mm.
In this embodiment, the frequency-selective microstructure 104 is square, the width range of the frequency-selective microstructure 104 is 0-10 mm, the distance range between two adjacent frequency-selective microstructures 104 is 0-10 mm, and the thickness range of the frequency-selective microstructure 104 is 0-1 mm, and the above-mentioned structure and related parameters are selected to ensure that the electromagnetic wave with working frequency can be transmitted through, and at the same time, most of the electromagnetic wave with non-working frequency can be reflected.
It should be noted that, a person skilled in the art can specifically design the shape and related parameters of the frequency selective microstructure 104 according to the electromagnetic wave with the required operating frequency, and this embodiment does not specifically limit this.
Preferably, the material of the first intermediate layer 102 is a high-transmittance connecting material, and may be a high polymer material, such as polyimide.
Preferably, the thickness of the first intermediate layer 102 is in the range of 0 to 0.1 mm.
Preferably, the first dielectric layer 103 is made of a non-metal dielectric material with a dielectric constant of 0-20, such as ceramic.
Preferably, the thickness of the first dielectric layer 103 is in the range of 0 to 1 mm.
Referring again to fig. 2, for example, in one implementation, the reflective structure 20 includes an intermediate layer 201, a reflective layer 202 and a second intermediate layer 203, wherein the intermediate layer 201 is disposed below the first dielectric layer 103, the reflective layer 202 is disposed below the intermediate layer 201, and the second intermediate layer 203 is disposed below the reflective layer 202, the reflective layer 202 is capable of transmitting the electromagnetic wave of the operating frequency and reflecting the electromagnetic wave of the second non-operating frequency, so that after the reflection of the electromagnetic wave of the second non-operating frequency by the reflective layer 202, only the electromagnetic wave of the operating frequency is transmitted through the reflective layer 202 into the enhancement structure 30.
Further, the surface of the reflective layer 202 close to the frequency selective structure 10 is provided with non-periodically distributed reflective microstructures 204 to enhance the reflectivity to the second non-operating frequency. In order to ensure the passing property of the working frequency, the difference between the refractive index of the intermediate layer 201 of the reflection structure to the working frequency and the refractive index of the reflection layer 202 of the reflection structure to the working frequency is less than 0.5, and the difference between the refractive index of the intermediate layer 201 of the reflection structure to the second non-working frequency and the refractive index of the reflection layer 202 of the reflection structure to the second non-working frequency is more than 2, so that the reflection layer can better pass the electromagnetic wave of the working frequency and reflect the electromagnetic wave of the second non-working frequency. In addition, the processing of the reflection microstructure by adopting the ultrafast laser comprises the steps of polarizing light beams and processing the light beams into a microstructure smaller than a frequency selection structure in a scanning projection mode, wherein the reflection microstructure comprises a plurality of structural monomers, and the distance between the structural monomers is larger than the reciprocal of the working frequency.
Therefore, the electromagnetic wave of the second non-operating frequency transmitted through the frequency selective structure 10 can be further reflected by the reflective microstructures 204 on the reflective layer 202, and the electromagnetic wave of the operating frequency can be transmitted, so as to enhance the stealth effect, and in addition, the reflected second non-operating frequency can also be reflected to the frequency selective microstructures 104 of the frequency selective layer 101, so as to generate diffuse reflection.
Preferably, the material of the reflective layer 202 is a metal material, such as copper or aluminum.
Preferably, the thickness of the reflective layer 202 ranges from 0mm to 1 mm.
Preferably, the shape of the reflective microstructure 204 is non-periodic, and the reflective microstructure 204 may also have other shapes, which is not particularly limited in this embodiment.
Preferably, the width of the reflecting microstructures 204 ranges from 0mm to 10mm, and the distance between two adjacent reflecting microstructures 204 ranges from 0mm to 10 mm.
Preferably, the thickness of the reflective microstructure 204 ranges from 0mm to 1 mm.
In this embodiment, the reflective microstructure 204 is shaped like a spherical crown, and the thickness of the reflective microstructure 204 ranges from 0mm to 1mm, and the above structure and parameters are selected to ensure that the electromagnetic wave with the working frequency can be transmitted through and the electromagnetic wave with the second non-working frequency can be reflected.
It should be noted that, a person skilled in the art may specifically design the shape and related parameters of the reflective microstructure 204 according to the electromagnetic wave of the second non-operating frequency, which is not specifically limited in this embodiment, for example, the frequency range of the electromagnetic wave of the second non-operating frequency transmitted through the frequency selective structure 10 may be measured by an oscilloscope, so that the shape and related parameters of the reflective microstructure 204 may be specifically designed according to the measured frequency range of the electromagnetic wave of the second non-operating frequency.
Preferably, the material of the intermediate layer 201 and the second intermediate layer 203 is a connecting material with high transmittance, and may be a high molecular material, such as polyimide.
Preferably, the thicknesses of the intermediate layer 201 and the second intermediate layer 203 range from 0mm to 0.1mm, wherein the thicknesses of the intermediate layer 201 and the second intermediate layer 203 may be the same or different.
Referring to fig. 2 again, for example, in one implementation, the reinforcing structure 30 includes a second dielectric layer 301, a third intermediate layer 302, and a reinforcing layer 303, where the second dielectric layer 301 is located below the second intermediate layer 203, the third intermediate layer 302 is located below the second dielectric layer 301, and the reinforcing layer 303 is located below the third intermediate layer 302, and the reinforcing layer 303 can enhance the intensity of the electromagnetic wave at the operating frequency and transmit the electromagnetic wave at the operating frequency with enhanced intensity to the concealed object.
Further, the surface of the reinforcing layer 303 close to the third intermediate layer 302 is provided with periodically distributed reinforcing microstructures 304, so that the intensity of the electromagnetic wave of the operating frequency can be enhanced by the reinforcing microstructures 304 on the reinforcing layer 303.
Preferably, the material of the enhancement layer 303 is a metal material, such as copper or aluminum.
Preferably, the thickness of the reinforcing layer 303 ranges from 0 to 1 mm.
Preferably, the shape of the reinforcing microstructure 304 is convex cone-like, so that it becomes a periodic micro-nano grating.
Preferably, the period of the enhancing microstructure 304 is smaller than 1/4 of the reciprocal of the working frequency, so that the working frequency can realize better absorption and enhancement through the surface enhanced raman scattering effect of the micro-nano grating. The spacing of the structural monomers of the frequency selective structure is larger than the spacing of the structural monomers of the reflective microstructure and larger than the period of the reinforcing microstructure (the spacing of the structural monomers).
Preferably, the thickness of the reinforcing microstructures 304 is in the range of 0 to 1 mm.
Preferably, the second dielectric layer 301 is made of a non-metal dielectric material with a dielectric constant of 0-20, such as ceramic.
Preferably, the thickness of the second dielectric layer 301 is in the range of 0 to 1 mm.
Preferably, the material of the third intermediate layer 302 is a high-transmittance connecting material, and may be a high polymer material, such as polyimide.
Preferably, the thickness of the third intermediate layer 302 ranges from 0mm to 0.1 mm.
Furthermore, the structural monomer spacing of the frequency selection microstructure is larger than that of the reflection microstructure, and the structural monomer spacing of the reflection microstructure is larger than that of the enhancement microstructure.
In the embodiment, the reflection structure capable of reflecting the electromagnetic waves with the non-working frequency leaked by the frequency selection structure 10 is arranged between the frequency selection structure 10 and the enhancement structure 30, and the corresponding micro structure is arranged, so that the selective absorption of the working frequency is enhanced, the electromagnetic waves with the non-working frequency are prevented from entering the concealed object, and the concealed effect can be improved.
Example two
Referring to fig. 3, fig. 3 is a schematic flow chart of a method for preparing a selective wave-absorbing surface structure according to an embodiment of the present invention. The present embodiment provides a method for preparing a selective wave-absorbing surface structure on the basis of the above embodiments, where the method includes:
step 1, please refer to fig. 4a, a frequency selection structure 10 is prepared.
Step 1.1, plating a first intermediate layer 102 on the first medium layer 103 by adopting a plating process.
Preferably, the material of the first intermediate layer 102 is a high-transmittance connecting material, and may be a high polymer material, such as polyimide.
Preferably, the thickness of the first intermediate layer 102 is in the range of 0 to 0.1 mm.
Preferably, the first dielectric layer 103 is made of a non-metal dielectric material with a dielectric constant of 0-20, such as ceramic.
Preferably, the thickness of the first dielectric layer 103 is in the range of 0 to 1 mm.
Step 1.2, plating a frequency selection layer 101 on the first intermediate layer 102 by using a plating process, wherein the frequency selection layer 101 can transmit electromagnetic waves of working frequency and reflect electromagnetic waves of first non-working frequency.
Preferably, the thickness of the frequency selective layer 101 is in the range of 0 to 1 mm.
Step 1.3, processing a frequency selection microstructure 104 on the surface of the first intermediate layer 102 far away from the frequency selection layer 101 by using an ultrafast laser processing technology, wherein the frequency selection microstructure 104 selectively transmits electromagnetic waves with working frequencies and reflects the electromagnetic waves with first non-working frequencies.
Preferably, the shape of the frequency-selective microstructure 104 may be square or circular, or may be a combination of square and circular, and the frequency-selective microstructure 104 may also be other shapes, which is not specifically limited in this embodiment.
Preferably, the width range of the frequency-selective microstructure 104 is 0-10 mm, and the distance between two adjacent frequency-selective microstructures 104 is 0-10 mm.
Preferably, the thickness of the frequency-selective microstructure 104 ranges from 0mm to 1 mm.
Step 2, please refer to fig. 4b and 4c, at least one reflective structure 20 and one enhancement structure 30 are prepared, wherein the enhancement structure 30 is located under the reflective structure 20.
And 2.1, plating a second intermediate layer 203 on the second medium layer 301 by adopting a plating process.
Preferably, the material of the second intermediate layer 203 is a high-transmittance connecting material, and may be a high polymer material, such as polyimide.
Preferably, the thickness of the second intermediate layer 203 ranges from 0 to 0.1 mm.
Preferably, the second dielectric layer 301 is made of a non-metal dielectric material with a dielectric constant of 0-20, such as ceramic.
Preferably, the thickness of the second dielectric layer 301 is in the range of 0 to 1 mm.
And 2.2, plating a reflecting layer 202 on the second intermediate layer 203 by adopting a plating process, wherein the reflecting layer 202 can transmit electromagnetic waves at the working frequency and reflect electromagnetic waves at a second non-working frequency.
Preferably, the thickness of the reflective layer 202 ranges from 0mm to 1 mm.
And 2.3, processing a non-periodically distributed reflection microstructure 204 on the surface of the reflection layer 202 far away from the second intermediate layer 203 by using an ultrafast laser processing technology to enhance the reflectivity to the second non-working frequency, wherein the reflection microstructure 204 can reflect the electromagnetic wave of the second non-working frequency which penetrates through the frequency selection structure 10.
Preferably, the single structural elements of the reflective microstructure 204 are spherical crown shaped and have a spacing greater than the inverse of the selected operating frequency.
Preferably, the thickness of the reflective microstructure 204 ranges from 0mm to 1 mm.
And 2.4, plating a reinforcing layer 303 on the surface of the wave-absorbed object by adopting a coating process, wherein the reinforcing layer 303 can enhance the intensity of the electromagnetic wave with the working frequency.
Preferably, the material of the enhancement layer 303 is a metal material, such as copper or aluminum.
Preferably, the thickness of the reinforcing layer 303 ranges from 0 to 1 mm.
And 2.5, processing the periodically distributed reinforced microstructures 304 on the surface of the reinforced layer 303 by adopting an ultrafast laser processing technology, and reinforcing the intensity of the electromagnetic wave of the working frequency through the reinforced microstructures 304.
Preferably, the shape of the enhancement microstructure 304 may be a periodic micro-nano grating, and the structural unit of the enhancement microstructure 304 may be a convex cone shape, so that the nanostructure serves as a micro antenna to form surface-enhanced raman scattering.
Preferably, the period of the reinforcing microstructures 304 is less than 1/4, which is the inverse of the operating frequency, so that the electromagnetic wave of the operating frequency can be better absorbed and reinforced.
Preferably, the thickness of the reinforcing microstructures 304 is in the range of 0 to 1 mm.
Preferably, in order to further enhance the absorption performance to the working frequency, when the material of the enhancement layer is aluminum, the method further comprises:
heating the enhancement layer in an environment of 60-80 ℃ to generate an AAO film;
3-6 wt% of H is prepared3PO4Heating the solution to 40-60 ℃, and putting the enhancement layer into the solution for 5-10 minutes;
according to anhydrous SnCl4Mixing with deionized water at a ratio of 1:4, heating to 40-60 deg.C, adding the enhancement layer into the solution,
the reinforcement layer was removed and rinsed with 5 wt% HCL, then with deionized water. Thereby generating an AAO film on the reinforcing layer microstructure and expanding its AAO pores by secondary oxidation to increase its absorption rate to the operating frequency.
Preferably, when the enhancement layer is copper, the method comprises the following steps: and (3) placing the enhancement layer with the enhanced microstructure into a high-temperature atmosphere, heating to the temperature of 300-500 ℃, and preserving heat for 1-3 hours. The enhanced microstructure base thus exposed by the ultrafast laser machining will generate nano-oxide, further enhancing its absorption at the operating frequency.
And 2.6, plating a third intermediate layer 302 on the surface of the enhancement layer 303 with the enhancement microstructure 304 by adopting a plating process.
Preferably, the material of the third intermediate layer 302 is a high-transmittance connecting material, and may be a high polymer material, such as polyimide.
Preferably, the thickness of the third intermediate layer 302 ranges from 0mm to 0.1 mm.
And 2.7, plating the third interlayer 302 on the surface of the second dielectric layer 301 far away from the second interlayer 203 by adopting a plating process.
Step 3, please refer to fig. 4d, the frequency selection structure 10 is disposed on the reflection structure 20.
And 3.1, plating the intermediate layer 201 on the surface of the reflecting layer 202 with the reflecting microstructures 204 by adopting a plating process.
Preferably, the material of the intermediate layer 201 is a high-transmittance connecting material, and may be a high polymer material, such as polyimide.
Preferably, the thickness of the middle layer 201 is in the range of 0 to 0.1 mm.
And 3.2, plating the surface of the middle layer 201 far away from the reflecting layer 202 on the surface of the first medium layer 103 far away from the first middle layer 102 by adopting a plating process.
It should be noted that when the number of the prepared reflective structures 20 is more than two, at the end of step 2.3, the intermediate layer 201 should be directly plated on the reflective layer 202 to complete the preparation of the first reflective structure 20, then the second intermediate layer 203 should be plated on the intermediate layer 201, and the reflective layer 202 with the reflective microstructures 204 should be prepared on the second intermediate layer 203, if the number of the reflective structures 20 to be prepared is two, after the reflective layer 202 of the second reflective structure 20 is prepared, step 2.4 is continuously performed, that is, when the last reflective structure 20 is prepared, after only the reflective layer 202 of the last reflective structure 20 is prepared, step 2.4 is continuously performed.
The coating process according to this embodiment may be, for example, screen printing or evaporation, or may be other processes, which is not specifically limited in this embodiment.
The preparation method of the selective wave-absorbing surface structure adopted by the embodiment has the advantages of simple process flow, easiness in operation, high feasibility, low preparation cost and suitability for industrial production and application, and the selective wave-absorbing surface structure prepared by the preparation method can improve the stealth effect.
The implementation principle and technical effect of the preparation method of the selective wave-absorbing surface structure provided by the embodiment of the invention are similar to those of the selective wave-absorbing surface structure provided by the embodiment, and are not repeated herein.
In the description of the present invention, it is to be understood that the terms "first", "second" and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (9)
1. A selective wave absorbing surface structure, comprising:
the frequency selection structure is used for transmitting the electromagnetic wave of the working frequency and reflecting the electromagnetic wave of the first non-working frequency;
the reflection structure is positioned below the frequency selection structure, and reflection microstructures in aperiodic distribution are arranged on the surface, close to the frequency selection structure, of the reflection layer of the reflection structure;
the reinforcing structure is used for reinforcing the electromagnetic wave intensity of the working frequency, the reinforcing structure is positioned below the reflecting structure, periodically distributed reinforcing microstructures are arranged on the surface, close to the reflecting structure, of the reinforcing layer of the reinforcing structure, the reinforcing microstructure monomers of the reinforcing structure are convex cone-shaped, and the distance between the structural monomers is smaller than 1/4 of the reciprocal of the working frequency.
2. The selective wave absorbing surface structure of claim 1, wherein the difference between the index of refraction of the intermediate layer of the reflective structure at the operating frequency and the index of refraction of the reflective layer of the reflective structure at the operating frequency is less than 0.5, and wherein the difference between the index of refraction of the intermediate layer of the reflective structure at the second non-operating frequency and the index of refraction of the reflective layer of the reflective structure at the second non-operating frequency is greater than 2.
3. The selective wave absorbing surface structure of claim 1, wherein the reflective microstructure comprises a plurality of spherical-cap shaped structural monomers, and the spacing of the structural monomers is greater than the reciprocal of the operating frequency.
4. The selective wave absorbing surface structure of claim 1, wherein the frequency selective structure is provided with frequency selective microstructures, the structure monomer spacing of the frequency selective microstructures is larger than the structure monomer spacing of the reflection microstructures, and the structure monomer spacing of the reflection microstructures is larger than the structure monomer spacing of the reinforcing microstructures.
5. A preparation method of a selective wave-absorbing surface structure is characterized by comprising the following steps:
preparing a frequency selection structure, wherein the frequency selection structure is used for transmitting electromagnetic waves with working frequency and reflecting electromagnetic waves with first non-working frequency;
preparing at least one reflecting structure and an enhancing structure, wherein the reflecting structure is used for transmitting the electromagnetic wave with the working frequency and reflecting the electromagnetic wave with a second non-working frequency transmitted by the frequency selecting structure, and the enhancing structure is used for enhancing the intensity of the electromagnetic wave with the working frequency;
processing reflection microstructures in aperiodic distribution on the surface of a reflection layer of the reflection structure, which is close to the frequency selection structure, by adopting ultrafast laser, and processing enhancement microstructures in periodic distribution on the surface of an enhancement layer of the enhancement structure, which is close to the reflection structure, wherein the enhancement microstructure monomers of the enhancement structure are in a convex cone shape, and the spacing of the structure monomers is smaller than 1/4 of the reciprocal of the working frequency;
the frequency selective structure is bonded above the reflective structure and the enhancement structure is bonded below the reflective structure.
6. The method for preparing a selective wave absorbing surface structure according to claim 5, wherein the process for preparing the frequency selective structure comprises the following steps:
plating a first intermediate layer on the first medium layer by adopting a film plating process;
plating a frequency selection layer on the first intermediate layer by adopting a plating process;
and processing a frequency selection microstructure on the surface of the first intermediate layer far away from the frequency selection layer by using an ultrafast laser.
7. The method of preparing a selective wave absorbing surface structure according to claim 5, wherein the process of preparing at least one reflecting structure and one reinforcing structure comprises the steps of:
plating a second intermediate layer on the second medium layer by adopting a film plating process;
plating a reflecting layer on the second intermediate layer by adopting a plating process;
processing a reflection microstructure in non-periodic distribution on the surface of the second intermediate layer far away from the reflection layer by adopting an ultrafast laser processing technology, so that a structural monomer of the reflection microstructure is in a spherical crown shape and the spacing between the structural monomer and the reflection microstructure is greater than the reciprocal of the working frequency;
plating an enhancement layer on the surface of the wave-absorbed object by adopting a coating process;
processing the reinforced microstructures which are periodically distributed on the surface of the reinforced layer by adopting an ultrafast laser processing technology, so that the structural monomers of the reinforced microstructures are in a convex cone shape, and the period of the structural monomers is less than 1/4 of the reciprocal of the working frequency;
plating a third intermediate layer on the surface of the enhancement layer with the enhancement microstructure by adopting a plating process;
and plating the third intermediate layer on the surface of the second medium layer far away from the second intermediate layer by adopting a plating process.
8. The method of making a selective microwave absorbing surface structure according to claim 7, wherein when the reinforcing layer material is aluminum, the method further comprises the steps of:
heating the reinforcing layer with the reinforcing microstructure in an environment of 60-80 ℃ to generate an AAO film;
3-6 wt% of H is prepared3PO4Heating the solution to 40-60 ℃, and putting the enhancement layer into the solution for 5-10 minutes;
according to anhydrous SnCl4Mixing with deionized water at a ratio of 1:4, heating to 40-60 deg.C, and adding the enhancement layer into the solution;
the reinforcement layer was removed and rinsed with 5 wt% HCL, then with deionized water.
9. The method of claim 7, wherein when the reinforcing layer is copper, the method further comprises the steps of:
and putting the enhancement layer with the enhancement microstructure into a high-temperature atmosphere, heating to the temperature of 300-500 ℃, and preserving heat for 1-3 hours.
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