CN112713166B

CN112713166B - Display panel, electronic equipment and manufacturing method of display panel

Info

Publication number: CN112713166B
Application number: CN201911022644.XA
Authority: CN
Inventors: 姜博; 盖翠丽; 毛祖攀
Original assignee: Chengdu Vistar Optoelectronics Co Ltd
Current assignee: Chengdu Vistar Optoelectronics Co Ltd
Priority date: 2019-10-25
Filing date: 2019-10-25
Publication date: 2023-02-17
Anticipated expiration: 2039-10-25
Also published as: CN112713166A

Abstract

The embodiment of the invention provides a display panel, electronic equipment and a manufacturing method of the display panel. The display panel comprises a driving back plate with a light emitting area and a driving area, wherein the driving area is provided with an active layer and a first insulating layer which are sequentially stacked, a source electrode and a drain electrode, the source electrode and the drain electrode at least penetrate through the first insulating layer and are in contact with the active layer, the driving back plate further comprises a conductive reflection structure positioned in the light emitting area, the conductive reflection structure at least comprises a first conductive reflection ring, the source electrode and the drain electrode are positioned at the same layer, and the second direction is different from the first direction; the light-emitting chip is positioned in the light-emitting area, the conductive reflection structure surrounds the light-emitting chip, the driving backboard further comprises an electric connection part, and the first electrode of the light-emitting chip is electrically connected with the source electrode or the drain electrode through the electric connection part. The embodiment of the invention has the advantages of effectively reducing the optical crosstalk between adjacent pixels, improving the light utilization rate, simplifying the process steps and reducing the thickness of the display panel.

Description

Display panel, electronic equipment and manufacturing method of display panel

Technical Field

The embodiment of the invention relates to the field of display, in particular to a display panel, electronic equipment and a manufacturing method of the display panel.

Background

Micro light emitting diodes (Micro-LEDs or μ LEDs) generally refer to LEDs having a size of less than 200 μm. Compared with an Organic Light-Emitting Diode (OLED), the Micro-LED has the advantages of better material stability, longer service life, higher brightness and the like, and thus has a very great application prospect.

In the existing display panel adopting micro-LEDs as light emitting sources, a reflecting cup matched with the micro-LEDs needs to be prepared on a driving back plate so as to reduce the optical crosstalk problem of the micro-LEDs. However, the conventional display panel has disadvantages.

Disclosure of Invention

Embodiments of the present invention provide a display panel, an electronic device, and a method for manufacturing the display panel, so as to reduce the overall thickness of the display panel while solving the crosstalk between adjacent pixels of the display panel and the low light utilization rate.

To solve the above problem, an embodiment of the present invention provides a display panel, including: the driving back plate comprises a light emitting area and a driving area which are arranged along a first direction; the driving back plate includes: the driving back plate further comprises a source electrode and a drain electrode, the source electrode and the drain electrode at least penetrate through the first insulating layer and are in contact with the active layer, the driving back plate further comprises a conductive reflection structure positioned in the light emitting area, the conductive reflection structure at least comprises a first conductive reflection ring, the source electrode and the drain electrode are positioned on the same layer, and the second direction is different from the first direction; the light emitting chip is positioned in the light emitting area, and the conductive reflecting structure surrounds the light emitting chip; the driving back plate further comprises an electric connection part, and the first electrode of the light-emitting chip is electrically connected with the source electrode or the drain electrode through the electric connection part.

According to the display panel provided by the embodiment of the invention, the conductive reflection structure surrounding the light-emitting chip is arranged, so that the optical crosstalk between adjacent pixels can be effectively avoided, the color gamut is improved, the light-emitting utilization rate of the light-emitting chip can be improved, and the power consumption of the display panel is reduced; the conductive reflecting structure and the driving back plate are integrated together, so that the process steps of the display panel are simplified, and the manufacturing cost is lower; meanwhile, the thickness of the whole display panel is reduced, and the ultrathin display panel is favorably prepared.

In addition, the conductive reflection structure also comprises a second conductive reflection ring, and the second conductive reflection ring is positioned on the bottom surface of the first conductive reflection ring facing the active layer; the driving back plate further includes: the first conductive layer is positioned in the driving area and used for forming a capacitor, and the first conductive layer and the second conductive reflection ring are positioned on the same layer; preferably, the material of the first conductive reflective ring is the same as the material of the source and the drain; preferably, the material of the second conductive reflective ring is the same as the material of the first conductive layer. The second conductive reflection ring is additionally arranged at the bottom of the first conductive reflection ring, so that the overall thickness of the conductive reflection structure can be increased, and the light-emitting gathering effect of the conductive reflection structure on the light-emitting chip is improved; the conductive reflection structure and the first conductive layer are arranged on the same layer, so that the height of the conductive reflection structure is ensured, and the thickness of the display panel is reduced.

In addition, the conductive reflection structure also comprises a third conductive reflection ring, and the third conductive reflection ring is positioned on the top surface of the first conductive reflection ring far away from the active layer; preferably, the electrical connection portion covers the top surface of the source electrode or the drain electrode away from the active layer, and the third conductive reflective ring and the electrical connection portion are of an integral structure. The top of the first conductive reflection ring is further provided with a third conductive reflection ring, so that the overall height of the conductive reflection structure can be increased, and the light-emitting gathering effect of the conductive reflection structure on the side wall of the light-emitting chip is improved; and the electric connection part between the source/drain electrode and the light-emitting chip in the driving back plate and the third conductive reflection ring are integrated into a whole structure, so that the process steps are simplified during manufacturing, and the process cost is saved.

In addition, the source electrode or the drain electrode and the first conductive reflection ring are of an integral structure; or, the source electrode and the drain electrode are arranged at intervals with the first conductive reflection ring. By adopting the scheme that the source electrode or the drain electrode is of an integral structure, the first electrode of the light-emitting chip only needs to be electrically connected with the first conductive reflection ring, so that the manufacturing process of the electric connection part can be correspondingly simplified, and the manufacturing cost of the display panel is saved.

In addition, an included angle between the side wall of the conductive reflection structure facing the light-emitting chip and the bottom surface of the conductive reflection structure facing the active layer is smaller than 90 degrees; preferably, the included angle is 45 to 80 degrees. The side wall and the bottom of the conductive reflection structure form an inclination angle, so that the emergent light of the light-emitting chip can be emitted along the usable direction after being reflected by the conductive reflection structure, and the light utilization rate is improved.

In addition, the top surface of the conductive reflection structure far away from the active layer is higher than or flush with the top surface of the light-emitting chip far away from the active layer; preferably, the minimum distance between the top surface of the conductive reflective structure away from the active layer and the top surface of the light emitting chip away from the active layer is 1 to 3 micrometers. The top surface of the conductive reflection structure is higher than that of the light-emitting chip, so that light rays emitted to adjacent pixels by the light-emitting chip can be reduced, the proportion of light rays emitted by the light-emitting chip in the direction capable of being utilized after being reflected is improved, further, optical crosstalk between adjacent pixels is reduced, and the light utilization rate is improved; meanwhile, a reasonable top surface height difference is arranged between the conductive reflection structure and the light-emitting chip, so that the fixing process difficulty of the light-emitting chip and the light-emitting gathering effect of the conductive reflection structure on the light-emitting chip can be balanced.

In addition, the first electrode is positioned on the top surface of the light-emitting chip far away from the active layer, the driving backboard further comprises a second insulating layer positioned in the light-emitting area and surrounding the light-emitting chip, and the electric connection part covers part of the surface of the second insulating layer and is electrically connected with the first electrode; preferably, the second insulating layer is a transparent material.

Correspondingly, the embodiment of the invention also provides electronic equipment which comprises any one of the display panels.

Correspondingly, an embodiment of the present invention further provides a method for manufacturing a display panel, including: providing a substrate, and forming a driving back plate on the substrate, wherein the driving back plate comprises a light emitting area and a driving area which are arranged along a first direction; forming the driving back plate includes: sequentially forming an active layer and a first insulating layer stacked along a second direction on a substrate of a driving region, the first direction being different from the second direction; forming a source electrode and a drain electrode which penetrate through the first insulating layer and are in contact with the active layer in the driving region; forming a conductive reflection structure on the substrate of the light emitting area, wherein the conductive reflection structure at least comprises a first conductive reflection ring, and the first conductive reflection ring, the source electrode and the drain electrode are positioned at the same layer; a light emitting chip is fixed above the substrate of the light emitting area, and the conductive reflecting structure surrounds the light emitting chip; forming the driving back plate further comprises forming an electric connection part, wherein the electric connection part is used for realizing the electric connection between the first electrode of the light-emitting chip and the source electrode or the drain electrode.

In addition, forming the driving back plate further includes: and a third conductive reflection ring is formed on the top surface of the first conductive reflection ring, which is far away from the active layer, the electric connection part covers the top surface of the source electrode or the drain electrode, which is far away from the active layer, and the third conductive reflection ring and the electric connection part are of an integrated structure. The manufacturing process of the electric connection part and the third conductive reflection ring is combined, so that the manufacturing steps can be simplified, and the thickness of the display panel can be reduced.

Compared with the prior art, the manufacturing method of the display panel provided by the invention has the advantages that when the source electrode and the drain electrode which are in contact with the active layer in the driving back plate are manufactured, the conductive reflection structure surrounding the light-emitting chip is manufactured in the light-emitting area of the display panel, the light reflection structure and the manufacturing process of the driving back plate are integrated, the process steps are simplified, the manufacturing cost is saved, the overall thickness of the display panel is reduced, and the ultrathin display device is convenient to manufacture.

Drawings

One or more embodiments are illustrated by way of example in the accompanying drawings, which correspond to the figures in which like reference numerals refer to similar elements and which are not to scale unless otherwise specified.

Fig. 1 and fig. 2 are schematic structural diagrams of a display panel according to an embodiment of the invention;

fig. 3 and fig. 4 are schematic structural diagrams of a display panel according to another embodiment of the invention;

fig. 5 to 8 are schematic structural diagrams of a display panel according to still another embodiment of the invention;

fig. 9 is a schematic structural diagram of a display panel according to yet another embodiment of the present invention.

Detailed Description

When the Micro-LED emits light, the light can be emitted to all directions, so that the display panel adopting the Micro-LED as a light source has the following problems: optical crosstalk occurs between adjacent pixels, so that the purity of emergent light is reduced, and the color gamut is influenced; light emitted from the side wall of the Micro-LED cannot be fully utilized, so that the light efficiency is reduced, and the power consumption is increased.

In the prior art, the utilization rate of the light emitted from the side wall is increased by manufacturing a reflecting layer around a light emitting chip of the display panel. However, additional manufacturing steps are required to form the reflective layer around the light emitting chip, which increases the manufacturing cost. And in order to achieve a better light condensing effect, the height of the top surface of the reflective layer is generally greater than or equal to that of the light emitting chip, resulting in an increase in the thickness of the display panel.

The embodiment of the invention provides a display panel, wherein a conductive reflection structure surrounding a light emitting chip is integrated in a driving backboard, and the conductive reflection structure and a conductive metal layer in the driving backboard are in the same layer, so that optical crosstalk between adjacent pixels is effectively avoided, the overall thickness of the display panel is reduced while the color gamut and the optical utilization rate are improved, the power consumption is reduced, the manufacturing process steps of the display panel are simplified, and the manufacturing cost is lower.

In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, it will be appreciated by those of ordinary skill in the art that in various embodiments of the invention, numerous technical details are set forth in order to provide a better understanding of the present application. However, the technical solutions claimed in the present application can be implemented without these technical details and various changes and modifications based on the following embodiments.

Fig. 1 and fig. 2 are schematic structural diagrams of a display panel according to an embodiment of the present invention, in which fig. 1 is a schematic cross-sectional structure of the display panel, and fig. 2 is a top view of a light emitting region.

Referring to fig. 1, the display panel provided in the present embodiment includes: the driving back plate comprises a light emitting area Y and a driving area X which are arranged along a first direction a; the driving back plate comprises an active layer 101 and a first insulating layer 102 which are positioned in a driving region X and are sequentially stacked along a second direction b, and further comprises a source electrode 104a and a drain electrode 104b, wherein the source electrode 104a and the drain electrode 104b at least penetrate through the first insulating layer 102 and are in contact with the active layer 101, the driving back plate further comprises a conductive reflection structure positioned in a light emitting region Y, the conductive reflection structure comprises a first conductive reflection ring 105, the first conductive reflection ring 105 is positioned at the same layer as the source electrode 104a and the drain electrode 104b, and the second direction b is different from the first direction a; the light emitting chip 106, the light emitting chip 106 is located in the light emitting region Y, and the conductive reflective structure surrounds the light emitting chip 106; the driving back plate further comprises an electrical connection portion 107, and the first electrode 106a of the light emitting chip 106 is electrically connected with the source electrode 104a or the drain electrode 104b through the electrical connection portion 107.

The display panel provided in the present embodiment will be described in detail below with reference to the accompanying drawings.

In this embodiment, the display panel may further include: the substrate 100, the active layer 101, and the first insulating layer 102 are stacked on the substrate 100 along the second direction b.

The substrate 100 may be used to provide mechanical support and protection for the drive backplane. The substrate 100 may be a rigid substrate such as glass, or may be a flexible substrate such as Polyimide (PI) or Polyethylene Terephthalate (PET).

It is understood that the driving region X and the light emitting region Y may be arranged in parallel on a plane provided by the substrate 100, the driving region X including the active layer 101 and the first insulating layer 102 sequentially stacked along the second direction b. The first direction a and the second direction b may be perpendicular.

The active layer 101 includes a channel region 12 and doped regions 11 located at opposite sides of the channel region 12. The display panel further includes: a gate electrode 13 between the active layer 101 and the first insulating layer 102, the gate electrode 13 being disposed opposite to the channel region 12; and a gate dielectric layer 14 between the gate 13 and the channel region 12. A third insulating layer 15 may be further included between the gate electrode 13 and the first insulating layer 102, and the third insulating layer 15 may be further positioned in the light emitting region Y. In other embodiments, the gate and the first insulating layer may also be in contact.

In this embodiment, the gate dielectric layer 14 also covers the sidewall surface of the active layer 101 and is located in the light emitting region Y, that is, the gate dielectric layer 14 is also located on the substrate 100 in the light emitting region Y.

The source 104a and the drain 104b include: a conductive plug (not labeled) and a top conductive layer (not labeled). The conductive plug penetrates through the first insulating layer 102, the third insulating layer 15 and the gate dielectric layer 14 and is electrically connected with the doped region 11; the top conductive layer is located on the surface of the first insulating layer 102 away from the active layer 101, and is in contact with the conductive plug.

The light emitting chips 106 may be micro led chips, and the display panel includes a plurality of light emitting chips 106 arranged in an array. The light emitting chip 106 further includes a second electrode 106b, in this embodiment, the second electrode 106b and the first electrode 106a are located on the same side of the light emitting chip 106, and the first electrode 106a is located on a bottom surface of the light emitting chip 106 facing the active layer 101. In other embodiments, the second electrode and the first electrode may be respectively located at two opposite sides of the light emitting chip.

The first conductive reflective ring 105 is in the same layer as the source electrode 104a and the drain electrode 104 b. In this embodiment, the source electrode 104a and the drain electrode 104b are spaced apart from the first conductive reflective ring 105, i.e., the source electrode 104a and the drain electrode 104b are not in contact with the first conductive reflective ring 105. In other embodiments, the source or the drain may also be integrated with the first conductive reflective ring 105.

In this embodiment, the first conductive reflective ring 105 is away from the top of the active layer 101 and the source electrode 104a and the drain electrode 104b are flush with each other, and in the second direction b, the bottom of the source electrode 104a and the bottom of the drain electrode 104b close to the active layer 101 are located on different planes from the bottom of the first conductive reflective ring 105 close to the active layer 101. In other embodiments, the first conductive reflective ring and the source electrode near the bottom of the active layer and the drain electrode near the bottom of the active layer may be in the same plane along the second direction.

The first conductive reflective ring 105 and the source 104a and the drain 104b are on the same layer, and the source 104a and the drain 104b are made of the same material as the first conductive reflective ring 105. Correspondingly, the first conductive reflection ring 105 can be simultaneously manufactured in the process of manufacturing the source electrode and the drain electrode of the display panel, so that the manufacturing process is simplified, and the manufacturing cost is saved; and the first conductive reflection ring 105 is integrated in the driving back plate, so that a reflection layer does not need to be manufactured in the space outside the driving back plate, and the thickness of the display panel is greatly reduced.

In this embodiment, the material of the source electrode 104a, the drain electrode 104b and the first conductive reflective ring 105 may be one of titanium and aluminum.

The first conductive reflection ring 105 surrounding the light emitting chip 106 is arranged, so that on one hand, light emitted by the light emitting chip 106 can be prevented from being transmitted to an undesired area, the problem of optical crosstalk between adjacent pixels can be prevented, and the color gamut of the display panel can be improved; on the other hand, the light emitted by the light emitting chip 106 can be reflected, so that the transmission direction of the light which cannot be utilized originally is changed, and the light after the transmission direction is changed can be utilized, thereby improving the utilization rate of the light and reducing the power consumption of the display panel.

For example, as shown by the arrow in fig. 1, after the light emitted from the side wall of the light emitting chip 106 is emitted to the first conductive reflective ring 105, the light is reflected to be emitted in the second direction b, so that the transmission direction of the light emitted from the light emitting chip is changed into the usable light emitting direction, and the light utilization rate of the light emitting chip is improved. Moreover, after the reflection of the first conductive reflection ring 105, the light emitted from the light emitting chip directly to the adjacent pixel is reduced, so that the optical crosstalk to the adjacent pixel is reduced, and the color gamut is improved.

It can be understood that, in order to adjust the exit direction of the light emitted from the sidewall of the light emitting chip 106 after being reflected by the first conductive reflective ring 105, an included angle between the sidewall of the conductive reflective structure facing the light emitting chip and the bottom surface of the conductive reflective structure facing the active layer is less than 90 degrees. Specifically, an included angle between a sidewall of the first conductive reflective ring 105 facing the light emitting chip 106 and a bottom surface of the first conductive reflective ring 105 facing the active layer 101 is less than 90 degrees.

In this embodiment, an included angle between the sidewall of the first conductive reflective ring 105 facing the light emitting chip 106 and the bottom surface of the first conductive reflective ring facing the active layer 101 is 45 degrees to 80 degrees, such as 50 degrees, 60 degrees, and 70 degrees. Within this angle range, the light emitted from the light emitting chip 106 can have a narrower light emitting range after being emitted to the sidewall of the first conductive reflective ring 105. Most of the light emitted from the side wall of the light emitting chip 106 is light parallel to the bottom surface, for example, an included angle of 45 degrees is adopted, the light emitted from the light emitting chip 106 to the side wall of the first conductive reflective ring 105 along the direction parallel to the bottom surface can be emitted along the direction perpendicular to the bottom surface after being reflected, conversely, if the inclined angle of the side wall is too small, the light emitted from the light emitting chip 106 to the side wall of the first conductive reflective ring 105 along the direction parallel to the bottom surface can be emitted along the direction deviating from the direction perpendicular to the bottom surface, that is, the light emitting range is wider. If the inclination angle of the sidewall of the first conductive reflective ring 105 is too large, for example, 90 degrees, the light parallel to the bottom surface is reflected along the original path after being emitted to the sidewall, and thus cannot be utilized by the display panel. The bottom surface here is the bottom surface of the first conductive reflective ring 105 near the driving backplate.

It can be understood that, in order to reduce the light emitted from the light emitting chip 106 to the adjacent pixels, the light emitting ratio of the light emitted from the light emitting chip 106 in the direction that can be utilized after being reflected by the conductive reflective structure, that is, the light condensing effect of the conductive reflective structure, is improved, and the top surface of the conductive reflective structure away from the active layer 101 is higher than or flush with the top surface of the light emitting chip 106 away from the active layer 101.

In this embodiment, the top surface of the first conductive reflective ring 105 is higher than the top surface of the light emitting chip 106, and the minimum distance between the top surface of the first conductive reflective ring 105 away from the active layer 101 and the top surface of the light emitting chip 106 away from the active layer 101 is 1 to 3 micrometers, for example, 1.5 micrometers, 2 micrometers, or 2.5 micrometers. In this range, the light-gathering effect of the conductive reflection structure can be improved, and the process difficulty of fixing the light-emitting chip in the manufacturing process can be reduced. In general, the light emitting chip 106 is transferred and fixed at the bottom of the conductive reflective structure after the conductive reflective structure is formed, and if a large height difference exists between the conductive reflective structure and the light emitting chip 106, a certain difficulty is caused to the fixing process of the light emitting chip 106.

It is noted that the first conductive reflective ring 105 is shaped as a closed circular ring in fig. 2. In other embodiments, the shape of the conductive reflective structure may also be a non-closed circular ring, or the shape of the conductive reflective structure may also be a regular ring such as a square ring or an irregular ring.

The driving back plate further includes: and an electrical connection portion 107, wherein the electrical connection portion 107 is used for realizing the electrical connection between the source electrode 104a or the drain electrode 104b and the first electrode 106 a. The electrical connection 107 is located above the source 104a or the drain 104 b. For example, in the present embodiment, the electrical connection portion 107 covers the top surface of the source electrode 104a or the drain electrode 104b away from the active layer 101, and in other embodiments, the electrical connection portion may also partially cover the top surface of the source electrode or the drain electrode away from the active layer.

The electrical connection portion 107 is in contact with the first electrode 106a, and the source electrode 104a or the drain electrode 104b is electrically connected to the first electrode 106a of the light emitting chip 106 through the electrical connection portion 107. In this embodiment, the electrical connection portion 107 electrically connects the first electrode 106a and the drain 104 b.

In this embodiment, in order to protect the surfaces of the source electrode 104a and the drain electrode 104b, the driving backplate further includes a fourth insulating layer 103 on the top surface of the first insulating layer 102 away from the active layer 101, the fourth insulating layer 103 covers the top conductive layer and the surface of the first conductive reflective ring 105 away from the active layer 101.

In this embodiment, the first electrode 106a is located on the bottom surface of the light emitting chip 106 close to the active layer 101. The electrical connection portion 107 penetrates through the fourth insulating layer 103 and contacts the drain electrode 104b, and also partially covers the top surface of the fourth insulating layer 103 away from the active layer 101, and also partially covers the surface of the sidewall of the first conductive reflective ring 105 facing the light emitting chip 106, and the electrical connection portion 107 also contacts the surface of the first electrode 106a facing the active layer 101.

In other embodiments, the first electrode may also be located on a top surface of the light emitting chip away from the active layer, and correspondingly, the driving backplane may further include: and the electric connection part covers part of the surface of the second insulating layer and is electrically connected with the first electrode. In order to prevent the second insulating layer from affecting the light emitted from the light emitting chip, the second insulating layer may be made of a transparent material.

In this embodiment, the driving backplane further includes a fifth insulating layer 108 on the top surface of the fourth insulating layer 103 away from the active layer 101, and the fifth insulating layer 108 covers a region of the electrical connection portion 107 on the top surface of the fourth insulating layer 103 away from the active layer 101. The fifth insulating layer 108 can provide protection to the electrical connection 107, such as preventing the electrical connection 107 from water-oxygen corrosion.

In this embodiment, the first insulating layer 102 is made of an inorganic insulating material such as silicon oxide or silicon nitride, and has a thickness of 4500 to 5000 angstroms; the fourth insulating layer 103 may be made of an organic insulating material and has a thickness of 2 to 5 micrometers, the fifth insulating layer 108 may be made of an inorganic insulating material such as silicon oxide or silicon nitride and has a thickness of 500 to 1500 angstroms, and the third insulating layer 15 may be made of an inorganic insulating material such as silicon oxide or silicon nitride and has a thickness of 500 to 1500 angstroms.

In the present embodiment, the first insulating layer 102 and the fourth insulating layer 103 also cover the first conductive reflective ring 105 and the side wall of the electrical connection portion 107 facing the light emitting chip 106. In other embodiments, the first insulating layer and the fourth insulating layer may also expose the first conductive reflective ring and the electrical connection portion toward the sidewall of the light emitting chip. Therefore, light emitted by the light emitting chip can be directly emitted after being reflected by the first conductive reflection ring, and light loss of light emitted by the light emitting chip is reduced.

In the display panel with excellent structural performance provided by the embodiment, the conductive reflection structure surrounding the light emitting chip 106 is constructed around the light emitting chip 106, so that the optical crosstalk between adjacent pixels is effectively avoided, the color gamut is improved, the light utilization rate is enhanced, and the power consumption is reduced; meanwhile, the conductive reflection structure is integrated in the driving back plate, and the first conductive reflection ring 105, the source electrode 104a and the drain electrode 104b are in the same layer, so that the overall thickness of the display panel is reduced, the manufacturing process steps are simplified in the manufacturing process, and the manufacturing cost is reduced.

Another embodiment of the present invention provides a display panel, different from the above-mentioned embodiment, in the display panel provided in another embodiment of the present invention, the conductive reflective structure further includes a second conductive reflective ring, the second conductive reflective ring is located on a bottom surface of the first conductive reflective ring facing the active layer; the driving back plate further includes: the first conductive layer is positioned in the driving area and used for forming a capacitor, and the first conductive layer and the second conductive reflection ring are positioned on the same layer. Therefore, the thickness of the whole conductive reflection structure can be increased, and the light gathering effect of the conductive reflection structure on the light emitting chip is improved, so that the aims of improving the color gamut and the light utilization rate and reducing the power consumption are fulfilled.

Fig. 3 and fig. 4 are schematic structural diagrams of a display panel according to another embodiment of the present invention, in which fig. 3 is a schematic cross-sectional structure, and fig. 4 is a top view of a light emitting region.

Referring to fig. 3, the driving backplane of the display panel includes an active layer 201 on a substrate 200, a first insulating layer 202, a source electrode 204a and a drain electrode 204b, and further includes an electrical connection portion 207 and a light emitting chip 206. The electrical connection portion 207 is used to achieve electrical connection between the source electrode 204a or the drain electrode 204b and the first electrode 206a of the light emitting chip 206. The light emitting diode further comprises a capacitor 209, the capacitor 209 comprises a first conductive layer 209a and a third conductive layer 209b which are oppositely arranged, the conductive reflection structure 214 comprises a first conductive reflection ring 205 and a second conductive reflection ring 210, the first conductive reflection ring 205 is arranged on the same layer as the source electrode 204a and the drain electrode 204b, the second conductive reflection ring 205 is arranged on the same layer as the first conductive layer 209a, the second conductive reflection ring 210 is arranged on the bottom surface of the first conductive reflection ring 205 facing the active layer 201, and the first conductive reflection ring 205 and the second conductive reflection ring 210 jointly surround the light emitting chip 206.

The same or corresponding parts as or to the previous embodiment can be referred to the previous embodiment, and detailed description is omitted herein.

Referring to fig. 3, the active layer 201 includes a doped region 21, a channel region 22, a gate electrode 23 disposed opposite to the channel region 22 on the driving region X, a gate dielectric layer 24 between the channel region 22 and the gate electrode 23, a third insulating layer 25 covering the surface of the gate electrode 23 and on the top surface of the gate dielectric layer 24 away from the active layer 201, and a fourth insulating layer 203 and a fifth insulating layer 208 sequentially stacked on the top surface of the first insulating layer 202 away from the active layer 201.

In this embodiment, the first conductive layer 209a is located on the top surface of the third insulating layer 25 away from the active layer 201, and the first insulating layer 202 covers the side surfaces and the top surface of the first conductive layer 209 a; the third conductive layer 209b is located on the top surface of the gate dielectric layer 24 away from the active layer 201 and is located at the same layer as the gate electrode 23, and the third insulating layer 25 covers the side surface and the top surface of the third conductive layer 209 b.

Referring to fig. 3 and 4, the conductive reflective structure 214 includes a first conductive reflective ring 205 and a second conductive reflective ring 210, and the second conductive reflective ring 210 is located at the bottom of the first conductive reflective ring 205 near the active layer 201.

In this embodiment, the second conductive reflective ring 210 is located on the same layer as the first conductive layer 209a, the top surface of the second conductive reflective ring 210 away from the active layer 201 and the top surface of the first conductive layer 209a away from the active layer 201 are located on the same plane, and the bottom surface of the second conductive reflective ring 210 close to the active layer 201 and the bottom surface of the first conductive layer 209a close to the active layer 201 are located on the same plane.

The second conductive reflective ring 210 and the first conductive layer 209a are made of the same material, which may be molybdenum metal. In another embodiment, the second conductive reflective ring 210 and the first conductive layer 209a may also be different materials.

The second conductive reflection ring 210 is additionally arranged at the bottom of the first conductive reflection ring 205, and the first conductive layer 209a of the capacitor 209 in the driving region X and the second conductive reflection ring 210 are arranged to be in the same layer, so that the overall thickness of the conductive reflection structure 214 can be increased, the light gathering effect of the conductive reflection structure 214 on the light emitting chip 206 is further enhanced, the thickness of the display panel is not additionally increased, the manufacturing process steps of the display panel are conveniently reduced, and the manufacturing cost is further reduced.

It is noted that the second conductive reflective ring 210 is shaped as a closed circular ring in fig. 4. In other embodiments, the second conductive reflective ring may also be a non-closed circular ring, or may also be a regular ring such as a square ring or an irregular ring.

In this embodiment, the second electrode 206b and the first electrode 206a of the light emitting chip 206 are located on the same side of the light emitting chip 206, and the first electrode 206a is located on the bottom surface of the light emitting chip 206 facing the active layer 201. In other embodiments, the second electrode and the first electrode may be respectively located at two opposite sides of the light emitting chip.

It can be understood that, in order to adjust the exit direction of the light emitted from the sidewall of the light emitting chip 206 after being reflected by the second conductive reflective ring 210, an included angle between the sidewall of the second conductive reflective ring 210 facing the light emitting chip 206 and the bottom surface of the second conductive reflective ring 210 facing the active layer 201 is less than 90 degrees. Specifically, an angle between the sidewall of the second conductive reflective ring 210 and the bottom surface of the first conductive reflective ring 210 is less than 90 degrees.

In this embodiment, an included angle between the sidewall of the second conductive reflective ring 210 facing the light emitting chip 206 and the bottom surface of the second conductive reflective ring 210 facing the active layer 201 is 45 degrees to 80 degrees, for example, 50 degrees, 60 degrees, and 70 degrees. In the included angle in this range, after the light emitted from the light emitting chip 206 is emitted to the second conductive reflective ring 210, the included angle between the emergent angle of the reflected light and the direction perpendicular to the bottom surface of the second conductive reflective ring 210 is smaller, that is, the light emitting range of the light emitting chip 206 is narrower, so that the light condensing effect of the second conductive reflective ring 210 is improved, and the optical crosstalk to the adjacent pixels is reduced.

The inclination angle of the sidewall of the first conductive reflective ring 205 facing the light emitting chip 206 and the inclination angle of the sidewall of the second conductive reflective ring 210 facing the light emitting chip 206 may be the same or different.

In this embodiment, the inclination angle of the sidewall of the second conductive reflective ring 210 facing the light emitting chip 206 is smaller than the inclination angle of the sidewall of the first conductive reflective ring 205 facing the light emitting chip 206. In this way, the light emitted from the sidewall of the light emitting chip 206 to the second conductive reflective ring 210 at the bottom can be emitted in a direction approximately perpendicular to the direction in which the second conductive reflective ring 210 is close to the bottom of the active layer 201. The cooperation between the conductive reflection knot rings with different inclination angle lateral walls can make the light emitting chip 206 emit along different angles to the conductive reflection structure lateral walls, and emit along the direction which is nearly parallel after being reflected, so that the light emitting range of the light emitting chip 206 is better narrowed, the light emitted by the light emitting chip to the adjacent pixels is reduced, and a better light gathering effect is achieved.

The display panel provided by the embodiment can effectively reduce the optical crosstalk between adjacent pixels, thereby improving the color gamut and the optical utilization rate and reducing the power consumption; in addition, the second conductive reflective ring 210 is additionally arranged at the bottom of the first conductive reflective ring 205 close to the active layer 201, and the second conductive reflective ring 210 and the first conductive layer 209a of the capacitor 209 in the driving region X are arranged on the same layer, so that the overall thickness of the conductive reflective structure 214 is increased, the overall thickness of the display panel is not additionally increased, the manufacturing process steps of the display panel can be simplified, and the manufacturing cost is reduced while the overall thickness of the conductive reflective structure 214 is increased to further improve the aggregation effect of the conductive reflective structure 214.

A further embodiment of the present invention provides a display panel, which is different from the display panel in the above embodiment, in that the display panel further includes a third conductive reflective ring, the third conductive reflective ring is located on the top surface of the first conductive reflective ring away from the active layer; the electric connection part covers the top surface of the source electrode or the drain electrode far away from the active layer, and the third conductive reflection ring and the electric connection part are of an integrated structure. The third conductive reflection ring is additionally arranged at the top, far away from the active layer, of the first conductive reflection ring, the third conductive reflection ring and the electric connection part are arranged into an integral structure, the height of the conductive reflection structure can be increased, the optical crosstalk between adjacent pixels is reduced, the light utilization rate of the light-emitting chip is improved, the thickness of the display panel is not additionally increased, the manufacturing process steps of the display panel can be simplified, and the manufacturing cost of the display panel is reduced.

Fig. 5 is a cross-sectional structure diagram of the display panel provided in the embodiment, and fig. 6 is a top view of a light emitting area of the display panel.

The driving backplane of the display panel comprises an active layer 301, a first insulating layer 302, a source electrode 304a and a drain electrode 304b on a substrate 300, an electrical connection portion 307 and a light emitting chip 306. The electrical connection portion 307 is used to achieve electrical connection between the source electrode 304a or the drain electrode 304b and the first electrode 306a of the light emitting chip 306. The conductive reflective structure 314 includes a first conductive reflective ring 305 and a third conductive reflective ring 311, the first conductive reflective ring 305, the source 304a and the drain 304b are disposed on the same layer, the third conductive reflective ring 311 and the electrical connection portion 307 are integrated, the third conductive reflective ring 311 is located on the bottom surface of the first conductive reflective ring 305 away from the active layer 301, and the first conductive reflective ring 305 and the third conductive reflective ring 311 surround the light emitting chip 306 together.

Referring to fig. 5, the active layer 301 includes a doped region 31, a channel region 32, a gate electrode 33 disposed opposite to the channel region 32 and on the driving region X, a gate dielectric layer 34 disposed between the channel region 32 and the gate electrode 33, a third insulating layer 35 covering the surface of the gate electrode 33 and on the top surface of the gate dielectric layer 34 away from the active layer 301, and a fourth insulating layer 303 and a fifth insulating layer 308 sequentially stacked on the top surface of the first insulating layer 302 away from the active layer 301.

In this embodiment, the light emitting chip 306 includes a first electrode 306a and a second electrode 306b, the first electrode 306a and the second electrode 306b are located on the same side of the light emitting chip 306, and the first electrode 306a is located on a bottom surface of the light emitting chip 306 facing the active layer 301.

Referring to fig. 5 and 6, a third conductive reflective ring 311 is further included on the light emitting region Y, and the third conductive reflective ring 311 is located on the top surface of the first conductive reflective ring 305 away from the active layer 301. The first conductive reflective ring 305 and the third conductive reflective ring 311 are disposed around the light emitting chip 306.

The electrical connection portion 307 has a portion covering the top surface of the source electrode 304a or the drain electrode 304b, which is away from the active layer 301, for achieving electrical contact between the electrical connection portion 307 and the source electrode 304a or the drain electrode 304b,

the third conductive reflective ring 311 and the electrical connection portion 307 are of an integral structure, and a top surface of the third conductive reflective ring 311 away from the active layer 301 and a top surface of the electrical connection portion 307 on the fourth insulating layer 303 away from the active layer 301 are located on the same plane. In this embodiment, the third conductive reflective ring 311 and the electrical connection portion 307 are made of the same material, which is one of titanium and aluminum.

The third conductive reflective ring 311, which is integrated with the electrical connection portion 307, is added to the top surface of the first conductive reflective ring 305 away from the active layer 301, so that the overall height of the conductive reflective structure 314 can be increased without increasing the thickness of the display panel, thereby improving the light collection effect of the conductive reflective structure 314 on the light emitted from the light emitting chip 306, and simultaneously simplifying the manufacturing process steps of the display panel and reducing the manufacturing cost of the display panel.

In this embodiment, the conductive reflective structure 314 further includes a second conductive reflective ring 310 located on the first conductive reflective ring 305 near the bottom of the active layer 301, and a capacitor 309 is further included on the driving backplane, the capacitor 309 includes a first conductive layer 309a and a third conductive layer 309b oppositely disposed, and the third conductive reflective ring 310 is disposed on the same layer as the first conductive layer 309 a.

In other embodiments, the conductive reflective structure may also include only the first conductive reflective ring and the third conductive reflective ring.

It is understood that, in order not to affect the light condensing effect of the conductive reflective structure 314 on the light emitting chip 306, the portion of the electrical connection portion 307 located in the light emitting region Y may be attached to the surfaces of the third conductive reflective ring 311, the first conductive reflective ring 305 and the second conductive reflective ring 310, and electrically connected to the first electrode 306a of the light emitting chip 306.

In order to reduce the light emitted from the light emitting chip 306 to the adjacent pixels and improve the light utilization efficiency of the light emitting chip 306, the top surface of the conductive reflective structure 314 away from the active layer 301 is higher than or flush with the top surface of the light emitting chip 306 away from the active layer 301. For example, the minimum distance between the top surface of the third conductive reflective ring 311 away from the active layer 301 and the top surface of the light emitting chip 306 away from the active layer 301 is 1 to 3 micrometers, such as 1.5 micrometers, 2 micrometers, and 2.5 micrometers. The top surface of the conductive reflection structure 314 and the top surface of the light emitting chip have a height difference within a certain range, which not only can improve the light condensation effect of the conductive reflection structure 314, but also can balance the difficulty of the fixing process of the light emitting chip 306.

It is noted that the third conductive reflective ring 311 is shaped as a closed circular ring in fig. 6. In other embodiments, the third conductive reflective ring may also be a non-closed circular ring, or may also be a regular ring such as a square ring or an irregular ring.

It can be understood that, in order to adjust the exit direction of the light emitted from the sidewall of the light emitting chip 306 after being reflected by the third conductive reflective ring 311, an included angle between the sidewall of the third conductive reflective ring 311 facing the light emitting chip 306 and the bottom surface of the third conductive reflective ring 311 facing the active layer 301 is smaller than 90 degrees. Specifically, in the present embodiment, an included angle between the sidewall of the third conductive reflective ring 311 facing the light emitting chip 306 and the bottom surface of the third conductive reflective ring 311 facing the active layer 301 is 45 degrees to 80 degrees, for example, 50 degrees, 60 degrees, and 70 degrees. In the included angle in this range, after the light emitted by the light emitting chip 306 is emitted to the third conductive reflective ring 311, the included angle between the emergent angle of the reflected light and the direction perpendicular to the bottom surface of the third conductive reflective ring 311 is smaller, that is, the light emitting range of the light emitting chip 306 is narrower, so that the light condensing effect of the third conductive reflective ring 311 is improved, and the optical crosstalk to the adjacent pixels is reduced.

The inclination angle of the sidewall of the third conductive reflective ring 311 facing the light emitting chip 306 and the inclination angle of the sidewall of the first conductive reflective ring 305 facing the light emitting chip 306 may be the same or different.

In the present embodiment, the inclination angle of the sidewall of the third conductive reflective ring 311 facing the light emitting chip 306 is the same as the inclination angle of the sidewall of the first conductive reflective ring 305 facing the light emitting chip 306.

In other embodiments, the inclination angle of the sidewall of the third conductive reflective ring facing the light emitting chip is greater than the inclination angle of the sidewall of the first conductive reflective ring facing the light emitting chip. So, utilize the cooperation between the conductive reflection ring of different inclination, the light of emitting chip directive conductive reflection structure can follow the direction of being close to perpendicular conductive reflection structure bottom after the multiple reflection and jets out, and then narrows the lateral wall light-emitting scope of emitting chip better, reaches better spotlight effect.

When the second electrode 306b of the light emitting chip 306 is located on the bottom surface of the light emitting chip 306 facing the active layer 301, the driving backplane may further include: the second conductive layer 312 is disposed in the light emitting region Y, the second conductive layer 312 is disposed at the same level as the gate 33, and the second conductive layer 312 is electrically connected to the second electrode 306 b. Referring to fig. 5, the second conductive layer 312 and the gate 33 are on the same layer, a top surface of the second conductive layer 312 and a top surface of the gate 33 are located on the same plane, and a bottom surface of the second conductive layer 312 and a bottom surface of the gate 33 are located on the same plane. In this embodiment, the second conductive layer 312 and the gate 33 are made of the same material, such as molybdenum, or may be different. Therefore, the manufacturing process steps of the display panel can be further simplified, and the manufacturing cost of the display panel is reduced.

In other embodiments, as shown in fig. 7 and 8, the first electrode 306a of the light emitting chip is located on the top surface of the light emitting chip 306 away from the active layer 301, the driving backplane further includes a second insulating layer 313 located in the light emitting region Y and surrounding the light emitting chip 306, and the electrical connection portion 307 covers a portion of the surface of the second insulating layer 313 and is electrically connected to the first electrode 306 a. The light emitting chip 306 is a front-mounted light emitting chip, the first electrode 306a is electrically connected to the electrical connection portion 307, the second electrode 306b is located on the bottom surface of the light emitting chip 306 close to the active layer 301 and electrically connected to the second conductive layer 312, and the second conductive layer 312 is used for providing an electrical signal to the light emitting chip 306.

The second insulating layer 313 fills the periphery of the light emitting chip. The second insulating layer 313 serves to support the electrical connection portion 307. It is to be understood that the second insulating layer may also partially fill the surroundings of the light emitting chip.

In order to prevent the light emitted from the sidewall of the light emitting chip 306 from being absorbed by the second insulating layer 313, the second insulating layer 313 is made of a transparent material, such as transparent organic glass or colorless polyimide.

The display panel provided by the above embodiment forms the third conductive reflective ring 311 on the top surface of the first conductive reflective ring 305, which can increase the overall height of the conductive reflective structure 314, further increase the light gathering effect of the conductive reflective structure 314 on the light emitting chip 306, narrow the light emitting angle of the light emitting chip 306, reduce the crosstalk of the light emitted from the light emitting chip 306 to the adjacent pixels, and improve the light utilization rate. The third conductive reflective ring 311 and the electrical connection portion 307 are integrated, so that the overall height of the display panel is increased, the thickness of the display panel is not additionally increased, the manufacturing process steps of the display panel are simplified, and the manufacturing cost is reduced.

In another embodiment of the present invention, a display panel is provided, which is different from the above embodiments in that the source or the drain is integrated with the first conductive reflective ring.

Fig. 9 is a schematic cross-sectional view of a display panel according to another embodiment of the invention.

Referring to fig. 9, the driving backplane of the display panel includes an active layer 401 on a substrate 400, a first insulating layer 402, a source electrode 404a and a drain electrode 404b, an electrical connection portion 407, and a light emitting chip 406. The electrical connection portion 407 is used to achieve electrical connection between the source 404a or the drain 404b and the first electrode 406a of the light emitting chip 406. The conductive reflective structure includes a first conductive reflective ring 405, the first conductive reflective ring 405 is disposed on the same layer as the source 404a and the drain 404b, the first conductive reflective ring 405 surrounds the light emitting chip 406, and the source 404a or the drain 404b and the first conductive reflective ring 405 are integrated.

The same or corresponding parts as or to the previous embodiment can be referred to the previous embodiment, and detailed description thereof is omitted.

In this embodiment, the drain 404b and the first conductive reflective ring 405 are integrated into a single structure, but in other embodiments, the source 404a and the first conductive reflective ring 405 may also be integrated into a single structure.

The portion of the drain 404b on the top surface of the first insulating layer 402 away from the driving backplate contacts the portion of the first conductive reflective ring 405 on the top surface of the first insulating layer 402 away from the driving backplate, i.e. the drain 404b and the first conductive reflective ring 405 form an integral structure. It is understood that, since the drain electrode 404b and the first conductive reflective ring are an integral structure, and the drain electrode 404b is electrically connected to the first conductive reflective ring 405, the corresponding electrical connection portion 407 only needs to include a portion for achieving electrical connection between the first conductive reflective ring 405 and the first electrode 406a, and thus electrical connection between the drain electrode 406b and the first electrode 406a is achieved.

In this embodiment, the first electrode 406a and the second electrode 406b of the light emitting chip 406 are located on a side of the light emitting chip 406 facing the driving backplane, and the electrical connection portion 407 is located at a bottom of the driving backplane near an area surrounded by the first conductive reflective ring 405. In other embodiments, the first electrode of the light emitting chip is located on a side of the light emitting chip away from the driving backplane, and the display panel further includes a second insulating layer surrounding the light emitting chip, and the electrical connection portion covers a portion of a surface of the second insulating layer away from the driving backplane and is electrically connected to the first conductive reflective ring and the first electrode.

The source 404a or the drain 404b and the first conductive reflective ring 405 are arranged to be an integral structure, the first conductive reflective ring 405 and the source 404a or the drain 404b are electrically connected, and the electrical connection portion 407 does not need to be arranged to cross the conductive reflective ring, so that the overall height of the display panel is reduced, most processes for manufacturing the electrical connection portion in the above embodiment are omitted, and the manufacturing cost is saved.

In the display panel provided by the embodiment, the first conductive reflective ring 405 surrounding the light emitting chip 406 is disposed around the light emitting chip 406, and the light that cannot be utilized is reflected by the first conductive reflective ring 405 and then emitted in the direction that can be utilized, so as to gather the light of the light emitting chip and narrow the light emitting range of the light emitting chip; and the source electrode 404a or the drain electrode 404b and the first conductive reflection ring 405 are of an integral structure, and an electric connection part is not required to be formed on the top surface of the source electrode 404a or the drain electrode 404b far away from the driving back plate, so that the overall thickness of the display panel is reduced, the manufacturing process is simplified, and the manufacturing cost of the display panel is saved.

Accordingly, another embodiment of the present invention provides an electronic device, including the display panel in any of the above embodiments.

The electronic device can be a mobile phone, a tablet or a display, and the like, which needs to display content.

Accordingly, the present embodiment provides a method for manufacturing a display panel, which can be used for manufacturing the display panel. Referring to fig. 5 to 8, the method for manufacturing a display panel includes:

a substrate 300 is provided, and a driving backplane including light emitting regions X and driving regions Y arranged in a first direction a is formed on the substrate 300.

The substrate 300 is used to provide an initial plane for forming the driving backplate and to provide mechanical support for the driving backplate. The substrate 300 may be a rigid substrate such as glass, or may be a flexible substrate such as Polyimide (PI) or Polyethylene Terephthalate (PET).

Forming the driving back plate includes:

step S1, sequentially forming an active layer 301 and a first insulating layer 302 stacked in a second direction b on a substrate 300, the first direction a and the second direction b being different.

The active layer 301 includes a channel region 32 and doped regions 31 at both sides of the channel region.

A gate dielectric layer 34, a gate electrode 33, and a third insulating layer 35 are also sequentially formed on the active layer 301 before forming the first insulating layer 302 after forming the active layer 301. After the third insulating layer 35 is formed, a first insulating layer 302 is formed on the third insulating layer 35.

Forming the driving back plate further comprises: a capacitor 309 is formed in the driving region X, wherein the capacitor 309 includes a first conductive layer 309a and a third conductive layer 309b disposed opposite to each other, the third conductive layer 309b is disposed on the same layer as the gate 33, and the first conductive layer 309a is disposed on a side of the third conductive layer 309a away from the active layer 301. In order to increase the overall thickness of the conductive reflective structure 314 formed later and improve the light utilization efficiency of the light emitting chip, a second conductive reflective ring 310 may be formed on the light emitting region Y at the same time in the process step of forming the first conductive layer 309a of the capacitor 309, and the second conductive reflective ring 310 and the first conductive layer 309a are in the same layer. The second conductive reflective ring 310 is used as part of a subsequently formed conductive reflective structure 314.

The first conductive layer 309a and the second conductive reflective ring 310 are made of the same material, such as a metal material, for example, molybdenum.

Step S2, forming a source electrode 304a and a drain electrode 304b which penetrate through the first insulating layer 302 and are in contact with the active layer 301 in the driving region X; a conductive reflective structure 314 is formed on the substrate 300 in the light emitting region Y, wherein the conductive reflective structure 314 includes a first conductive reflective ring 305, and the first conductive reflective ring 305 is disposed at the same layer as the source electrode 304a and the drain electrode 304 b.

In this embodiment, the source 304a, the drain 304b and the first conductive reflective ring 305 are formed in the same process step. Therefore, the manufacturing process of the display panel can be simplified, and the manufacturing cost of the display panel is reduced.

Specifically, the process steps of forming the source 304a, the drain 304b, and the first conductive reflective ring 305 may include: performing a patterning etching process on the first insulating layer 302 to form a first via hole for disposing the source electrode 304a and the drain electrode 304b in the driving region X and a second via hole for disposing the first conductive reflective ring 305 in the light emitting region Y; a source electrode 304a and a drain electrode 304b filling the first via hole are formed, and a first conductive reflective ring 305 filling the second via hole is formed. It is understood that before or after the first conductive reflective ring 305 is formed, a removal process is further performed on the area surrounded by the first conductive reflective ring 305, so as to provide an area location for subsequently fixing the light emitting chip.

The material of the source electrode 304a and the drain electrode 304b is the same as the material of the first conductive reflective ring 305. For example, a metal having a high reflectance such as titanium or aluminum.

The first conductive reflective ring 305 and the second conductive reflective ring 310 together form a conductive reflective structure 314.

Step S3, fixing the light emitting chip 306 in the light emitting region Y, wherein the conductive reflective structure 314 surrounds the light emitting chip 306, and the first electrode 306a of the light emitting chip 306 is electrically connected to the source 304a or the drain 304 b.

In this embodiment, the light emitting chip 306 may be a micro led chip, and the display panel includes a plurality of light emitting chips 306 arranged in an array. The light emitting chip 306 further includes a second electrode 306b, in this embodiment, the second electrode 306b and the first electrode 306a are located on the same side of the light emitting chip 306, and the first electrode 306a is located on a bottom surface of the light emitting chip 306 facing the active layer 301. In other embodiments, the second electrode and the first electrode may be respectively located at two opposite sides of the light emitting chip.

In order to form an insulation shield on the surface of the source and

drain electrodes

304a and 304b, after the source and

drain electrodes

304a and 304b and the first conductive reflective ring 305 are formed, a fourth insulation layer 303 covering the source and

drain electrodes

304a and 304b and the first conductive reflective ring 305 is further formed on the top surface of the first insulation layer 302.

Step S4, forming the driving backplane further includes: an electrical connection portion 307 is formed, and the electrical connection portion 307 is used to realize electrical connection between the first electrode 306a of the light emitting chip 306 and the source electrode 304a or the drain electrode 304 b.

As shown in fig. 7, the first electrode 306a is located on the top surface of the light emitting chip 306 away from the active layer 301, and the second electrode 306b is located on the bottom surface of the light emitting chip 306 close to the active layer 301. Accordingly, after the light emitting chip 306 is fixed, an electrical connection portion 307 is formed. Specifically, after the light emitting chip 306 is fixed, a second insulating layer 313 surrounding the light emitting chip 306 is also formed around the light emitting chip 306; after the second insulating layer 313 is formed, the electrical connection portion 307 is formed, and the electrical connection portion 307 covers a part of the surface of the second insulating layer 313 and is electrically connected to the first electrode 306 a.

The second insulating layer 313 fills the periphery of the light emitting chip 306. The second insulating layer 313 serves to support the electrical connection portion 307. It is understood that the second insulating layer 313 may also partially fill the surroundings of the light emitting chip 306. The second insulating layer 313 is made of a transparent material, such as transparent organic glass or colorless polyimide.

It is understood that, as shown in fig. 5, when the first electrode 306a of the light emitting chip 306 is located toward the bottom surface of the active layer 301, the electrical connection portion 307 is formed before fixing the light emitting chip 306.

In order to form an insulating shield on the surface of the electrical connection portion 307, after the electrical connection portion 307 is formed, a fifth insulating layer 308 is also formed on the fourth insulating layer 303 and the surface of the electrical connection portion 307 remote from the active layer 301.

Forming the driving back plate may further include: a third conductive reflective ring 311 is formed on the top surface of the first conductive reflective ring 305 away from the active layer 301, and the electrical connection 307 covers the top surface of the source electrode 304a or the drain electrode 304b away from the active layer 301. The third conductive reflective ring 311 also serves as a part of the conductive reflective structure 314, which is beneficial to further increasing the overall height of the conductive reflective structure 314, thereby reducing optical crosstalk between adjacent pixels and further improving the optical utilization rate of the light emitting chip.

In this embodiment, in the process step of forming the electrical connection portion 307, a third conductive reflective ring 311 is formed on the top surface of the first conductive reflective ring 305 away from the active layer 301, and the third conductive reflective ring 311 surrounds the light emitting chip 306. Accordingly, the third conductive reflective ring 311 and the electrical connection portion 307 are an integral structure, and the material of the third conductive reflective ring 311 is the same as that of the electrical connection portion 307.

That is, the third conductive reflective ring 311 is formed at the same time by using the manufacturing process of the electrical connection portion 307, so that no additional process step is required, which is beneficial to reducing the process cost of the display panel.

Accordingly, the conductive reflective structure 314 further includes a third conductive reflective ring 311.

It can be understood that, in order to improve the light condensing effect of the conductive reflective structure 314 on the light emitted from the light emitting chip 306 and reduce the light emitted from the light emitting chip 306 to the adjacent pixels, an inclined angle between the sidewall of the conductive reflective structure 314 facing the light emitting chip 306 and the bottom of the conductive reflective structure 314 close to the active layer 301 is smaller than 90 degrees, for example, 45 degrees to 80 degrees, for example, 50 degrees, 60 degrees, and 70 degrees.

In the present embodiment, the first conductive reflective ring 305, the second conductive reflective ring 310, and the third conductive reflective ring 311 have the same inclination angle toward the sidewall of the light emitting chip 306. In other embodiments of the present invention, the inclination angle of the first conductive reflective ring may be larger than that of the second conductive reflective ring, and the inclination angle of the third conductive reflective ring may be larger than that of the first conductive reflective ring.

In the manufacturing method of the display panel provided by the embodiment, the manufacturing processes of the light reflection structure and the driving back plate are integrated, so that the processing steps of the display panel are simplified, and the manufacturing cost is lower; meanwhile, the thickness of the whole display panel is reduced, and ultrathin display equipment is favorably prepared; set up around emitting chip and encircle emitting chip's electrically conductive reflection configuration, utilize electrically conductive reflection configuration to change emitting chip's light-emitting direction for the light-emitting direction that can be utilized, narrow emitting chip's light-emitting angle, reduce emitting chip light-emitting to adjacent pixel's optical crosstalk to promote light utilization ratio, reduce emitting chip's consumption.

It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples for carrying out the invention, and that various changes in form and details may be made therein without departing from the spirit and scope of the invention in practice. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.

Claims

1. A display panel, comprising:

the driving back plate comprises a light emitting area and a driving area which are arranged along a first direction;

the driving back plate includes: the driving back plate further comprises a source electrode and a drain electrode, the source electrode and the drain electrode at least penetrate through the first insulating layer and are in contact with the active layer, the driving back plate further comprises a conductive reflection structure located in the light emitting region, the conductive reflection structure at least comprises a first conductive reflection ring and a second conductive reflection ring, the first conductive reflection ring is located on the same layer as the source electrode and the drain electrode, the second conductive reflection ring is located on the bottom surface of the first conductive reflection ring facing the active layer, and the second direction is different from the first direction;

the light emitting chip is positioned in the light emitting area, the conductive reflection structure surrounds the light emitting chip, and the inclination angle of the side wall of the second conductive reflection ring facing the light emitting chip is smaller than that of the side wall of the first conductive reflection ring facing the light emitting chip;

the driving back plate further comprises an electric connection part, and the first electrode of the light-emitting chip is electrically connected with the source electrode or the drain electrode through the electric connection part.

2. The display panel of claim 1, wherein the driving backplane further comprises: and the first conductive layer and the second conductive reflection ring are positioned on the same layer.

3. The display panel according to claim 2, wherein a material of the first conductive reflective ring is the same as a material of the source electrode and the drain electrode.

4. The display panel according to claim 3, wherein a material of the second conductive reflective ring is the same as a material of the first conductive layer.

5. The display panel of claim 1, wherein the conductive reflective structure further comprises a third conductive reflective ring located on the top surface of the first conductive reflective ring away from the active layer.

6. The display panel according to claim 5, wherein the electrical connection portion covers a top surface of the source electrode or the drain electrode away from the active layer, and the third conductive reflective ring and the electrical connection portion are of a unitary structure.

7. The display panel according to claim 1, wherein the source electrode or the drain electrode and the first conductive reflective ring are of an integral structure; or, the source electrode and the drain electrode are arranged at intervals with the first conductive reflection ring.

8. The display panel according to any one of claims 1 to 7, wherein an angle between a sidewall of the conductive reflective structure facing the light emitting chip and a bottom surface of the conductive reflective structure facing the active layer is less than 90 degrees.

9. The display panel according to claim 8, wherein the included angle is 45-80 degrees.

10. The display panel according to any one of claims 1 to 7, wherein a top surface of the conductive reflective structure away from the active layer is higher than or flush with a top surface of the light emitting chip away from the active layer.

11. The display panel of claim 10 wherein the minimum distance between the top surface of the conductive reflective structure away from the active layer and the top surface of the light emitting chip away from the active layer is 1~3 microns.

12. The display panel according to claim 5, wherein the first electrode is located on a top surface of the light emitting chip away from the active layer, the driving backplane further comprises a second insulating layer located in the light emitting region and surrounding the light emitting chip, and the electrical connection portion covers a part of a surface of the second insulating layer and is electrically connected to the first electrode.

13. The display panel according to claim 12, wherein the second insulating layer is a transparent material.

14. An electronic device comprising the display panel according to any one of claims 1 to 13.

15. A method for manufacturing a display panel is characterized by comprising the following steps:

providing a substrate, and forming a driving back plate on the substrate, wherein the driving back plate comprises a light emitting area and a driving area which are arranged along a first direction;

forming the driving back plate includes: sequentially forming an active layer and a first insulating layer stacked along a second direction on the substrate of the driving region, the first direction and the second direction being different; forming a source electrode and a drain electrode penetrating through the first insulating layer and contacting the active layer in the driving region; forming a conductive reflection structure on the substrate of the light emitting region, wherein the conductive reflection structure at least comprises a first conductive reflection ring and a second conductive reflection ring, the first conductive reflection ring is positioned on the same layer as the source electrode and the drain electrode, and the second conductive reflection ring is positioned on the bottom surface of the first conductive reflection ring facing the active layer;

a light emitting chip is fixed above the substrate of the light emitting area, the conductive reflection structure surrounds the light emitting chip, and the inclination angle of the side wall of the second conductive reflection ring facing the light emitting chip is smaller than that of the side wall of the first conductive reflection ring facing the light emitting chip;

forming the drive backplate further comprises: and forming an electric connection part for realizing the electric connection between the first electrode of the light-emitting chip and the source electrode or the drain electrode.

16. The method of claim 15, wherein the forming the driving backplane further comprises: and forming a third conductive reflection ring on the top surface of the first conductive reflection ring, which is far away from the active layer, wherein the electric connection part covers the top surface of the source electrode or the drain electrode, which is far away from the active layer, and the third conductive reflection ring and the electric connection part are of an integrated structure.