CN112708929A - Single crystal material growing device utilizing gas circulation heat transfer temperature control - Google Patents
Single crystal material growing device utilizing gas circulation heat transfer temperature control Download PDFInfo
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- CN112708929A CN112708929A CN202011348617.4A CN202011348617A CN112708929A CN 112708929 A CN112708929 A CN 112708929A CN 202011348617 A CN202011348617 A CN 202011348617A CN 112708929 A CN112708929 A CN 112708929A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
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- Engineering & Computer Science (AREA)
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a single crystal material growth furnace utilizing gas circulation to transfer heat and control temperature, which belongs to the field of single crystal material preparation methods and equipment and comprises a bracket, a fixed frame, a guide rail, a slide block, a worm and gear lifting mechanism, a furnace body heat preservation section, a furnace body heat balance inner pipe, a thermocouple, a control module, a return air pipe, an airflow fan, a mounting plate and a feeding mechanism; the furnace body heat balance inner pipe is arranged in the inner cavity of the furnace body corresponding to each section of the furnace body heat preservation section, the gas circulation heat transfer temperature control device is utilized to control gas to circularly flow between the quartz ampoule and the furnace body heat balance inner pipe to carry out secondary heat transfer balance, the temperature fluctuation of the section of the furnace body and the nonuniformity of the axial temperature gradient caused by nonuniform radiant heat due to the fact that the winding direction of the thermocouple is not vertical to the central line of the furnace body are reduced, and a stable temperature field and a uniform temperature gradient are obtained in the inner cavity of the furnace body to grow the single crystal material with few defects.
Description
Technical Field
The invention belongs to the field of single crystal material preparation methods and equipment, and particularly relates to a single crystal material growth furnace utilizing gas circulation heat transfer and temperature control.
Background
When the tellurium-zinc-cadmium ternary single crystal or other double-component single crystal or single-component single crystal materials are prepared, raw materials with high purity are placed in a quartz ampoule, the quartz ampoule is vacuumized and then packaged, the packaged raw materials are placed in a single crystal material growth furnace through processes of high-temperature melting, swing mixing and the like, and the single crystal materials are grown by controlling the temperature in a growth furnace chamber.
The growth period of the single crystal material is long, and 1 single crystal bar can be grown normally in 15-20 days. Under the condition that the purity of the raw materials is high enough, the research result shows that: the growth defect of the single crystal material is closely related to the temperature gradient of the hearth and the moving stability of the raw material in a temperature zone.
However, in the prior art, the temperature gradient in the furnace is affected by the number of the heat preservation sections of the furnace body and the temperature distribution of each section, because the thermocouple is spirally wound on the inner wall of the furnace, the temperature of the furnace works in a high-temperature range of 950-1150 ℃, heat mainly takes radiant heat as a main part, the heat transfer direction is perpendicular to the surface of the thermocouple wire and outwards radiated, the heat transfer direction is disordered in the furnace, the winding direction of the thermocouple wire is not perpendicular to the central line of the furnace, and the obtained temperature field is not uniform enough on the plane perpendicular to the central line of the furnace. The fluctuation of the temperature field on the section vertical to the axial lead in the hearth causes the nonuniformity of the temperature gradient in the axial direction, thereby increasing the growth defects of the single crystal material, and particularly, the larger the inner diameter of the hearth is, the larger the fluctuation of the temperature of the section of the hearth and the nonuniformity of the temperature gradient in the axial direction are, the more the defects of the single crystal material are grown.
Disclosure of Invention
In order to overcome the problems in the background art, the invention provides a single crystal material growth furnace utilizing gas circulation heat transfer and temperature control, wherein a furnace body heat balance inner pipe is arranged in a hearth inner cavity corresponding to each section of a furnace body heat preservation section, and a gas circulation heat transfer temperature control device is utilized to control gas to circularly flow between a quartz ampoule and the furnace body heat balance inner pipe to carry out secondary heat transfer balance, so that the nonuniformity of radiant heat caused by the influence of the non-vertical direction of a thermocouple winding direction and a hearth central line is reduced, the stability of the radial section temperature in the hearth and the uniformity of the axial temperature gradient are improved, and the single crystal material with less defects is grown.
In order to realize the purpose, the invention is realized by the following technical scheme:
a single crystal material growing device utilizing gas circulation heat transfer and temperature control comprises a bracket 1, a fixed frame 2, a furnace body 6, a furnace body heat preservation section 7, a furnace body heat balance inner pipe 8, a thermocouple 9, a control module 10, a return air pipe 11, an airflow fan 12, a mounting plate 13 and a feeding mechanism 14, the furnace body heat insulation system is characterized in that a mounting plate 13 is fixedly mounted on the support 1, the mounting frame 2 is mounted on the mounting plate 13, the furnace body 6 is fixedly mounted on the mounting frame 2, 3-11 sections of furnace body heat balance inner pipes 8 coaxial with the furnace body 6 are mounted in an inner cavity of the furnace body 6, the 3-11 sections of furnace body heat balance inner pipes 8 are sequentially mounted from bottom to top, a furnace body heat insulation section 7 is respectively arranged between each section of furnace body heat balance inner pipe 8 and the furnace body 6, a thermocouple 9 for heating the furnace body heat insulation section 7 is arranged in each section of furnace body heat insulation section 7, the thermocouple 9 is respectively connected with a control module 10, and the temperature of the 3-11 sections of; the bottom of the furnace body 6 is provided with an inlet which is opposite to a furnace chamber formed by assembling 3-11 sections of furnace body heat balance inner pipes 8, the top of the furnace chamber is communicated with the inlet through a return air pipe 11 positioned outside the furnace body 6, the return air pipe 11 is provided with an airflow fan 12, the airflow fan 12 is fixedly arranged on the fixed frame 2, and the airflow fan 12 is connected with the control module 10; the bracket 1 is provided with a feeding mechanism 14, and the feeding mechanism 14 is provided with a feeding seat 15 which is opposite to the inlet of the furnace body 6.
Further, feeding mechanism 14 include base 17, lead screw 18, main lift servo motor 19, sliding seat 20, microliter drop servo motor 21, feed rod 22, base 17 fixed mounting in the bottom of mounting panel 13, the upper end of lead screw 18 is passed through the bearing and is installed on base 17, the lower extreme of lead screw 18 passes through the shaft coupling and installs the power output shaft of the main lift servo motor 19 on support 1 and be connected, install sliding seat 20 on the lead screw 18, microliter drop servo motor 21 fixed mounting is on sliding seat 20, the power output shaft of microliter drop servo motor 21 installs feed rod 22 through the shaft coupling, but feed seat 15 slidable mounting is on feed rod 22.
Furthermore, corrugated hoses 23 fixed between the sliding seats 20 and the mounting plate 13 for dust prevention are respectively arranged outside the screw rod 18 and the feeding rod 22.
Further, the guide rails 3 are respectively installed at the top of the left side and the top of the right side of the installation plate 13, the slide blocks 4 are installed on the guide rails 3, the fixing frame 2 is fixedly installed on the slide blocks 4 on the guide rails 3 on the left side and the right side of the upper portion of the support 1, the worm and gear lifting mechanism 5 is installed on the support 1 on the lower side of the installation plate 13, and the lifting portion of the worm and gear lifting mechanism 5 is connected with the fixing frame 2.
Further, the top of the furnace body 6 is provided with a furnace cover 25 through a pin shaft 24, a clamping hook is arranged on the furnace cover 25, and the furnace body 6 is hinged with a locking handle 26 which is matched with the clamping hook and used for locking the furnace cover 25.
The invention has the beneficial effects that:
the furnace body heat balance inner pipe is arranged in the inner cavity of the furnace body corresponding to each section of the furnace body heat preservation section, the gas circulation heat transfer temperature control device is utilized to control gas to circularly flow between the quartz ampoule and the furnace body heat balance inner pipe to carry out secondary heat transfer balance, the temperature fluctuation of the section of the furnace body and the nonuniformity of the axial temperature gradient caused by nonuniform radiant heat due to the fact that the winding direction of the thermocouple is not vertical to the central line of the furnace body are reduced, and a stable temperature field and a uniform temperature gradient are obtained in the inner cavity of the furnace body to grow the single crystal material with few defects.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a top view of the present invention;
FIG. 3 is a schematic view of the furnace structure of the present invention;
fig. 4 is a schematic diagram of a control circuit structure according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention and the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1-4, a single crystal material growth device using gas circulation heat transfer and temperature control comprises a support 1, a fixing frame 2, a furnace body 6, a furnace body heat preservation section 7, a furnace body heat balance inner pipe 8, a thermocouple 9, a control module 10, a return air pipe 11, an air flow fan 12, a mounting plate 13 and a feeding mechanism 14.
The furnace body heat insulation system is characterized in that a mounting plate 13 is fixedly mounted on the support 1, the mounting frame 2 is mounted on the mounting plate 13, the furnace body 6 is fixedly mounted on the mounting frame 2, 3-11 sections of furnace body heat balance inner pipes 8 coaxial with the furnace body 6 are mounted in an inner cavity of the furnace body 6, the 3-11 sections of furnace body heat balance inner pipes 8 are sequentially mounted from bottom to top, a furnace body heat insulation section 7 is respectively arranged between each section of furnace body heat balance inner pipe 8 and the furnace body 6, a thermocouple 9 for heating the furnace body heat insulation section 7 is arranged in each section of furnace body heat insulation section 7, the thermocouple 9 is respectively connected with a control module 10, and the temperature of the 3-11 sections of; the bottom of the furnace body 6 is provided with an inlet which is opposite to a furnace chamber formed by assembling 3-11 sections of furnace body heat balance inner pipes 8, the top of the furnace chamber is communicated with the inlet through a return air pipe 11 positioned outside the furnace body 6, the return air pipe 11 is provided with an airflow fan 12, the airflow fan 12 is fixedly arranged on the fixed frame 2, and the airflow fan 12 is connected with the control module 10; the bracket 1 is provided with a feeding mechanism 14, and the feeding mechanism 14 is provided with a feeding seat 15 which is opposite to the inlet of the furnace body 6. Placing the quartz ampoule filled with raw materials on a feeding seat 15, and pushing the quartz ampoule into the furnace chamber from an inlet opposite to the furnace chamber through a feeding mechanism 14; after the quartz ampoule containing raw materials is arranged in the furnace cavity, the control module 10 controls the thermocouple 9 to heat the furnace body heat preservation section 7, the furnace body heat balance inner tube 8 is arranged between the furnace cavity and the furnace body heat preservation section 7, the heat can be balanced into the furnace cavity as much as possible through the furnace body heat balance inner tube 8, so that the quartz ampoule in the furnace cavity is uniformly heated, the control module 10 controls the temperature of the 3-11 sections of the furnace body heat preservation section 7 which are arranged from bottom to top to be gradually raised to form a temperature gradient, the feeding mechanism 14 gradually conveys the quartz ampoule containing the raw materials from a low temperature field to a high temperature field in the temperature field to ensure that the raw materials contained in the quartz ampoule can generate single crystal materials in the temperature field with gradually raised temperature, the temperature gradient, the speed of the quartz ampoule packaging the raw materials passing through a temperature area and the like are controlled through the control module 10, so that the temperature control and the operation speed are more accurate, ensures that the generation defects of the single crystal material can be effectively controlled. Meanwhile, the control module 10 controls the air flow fan 12 to work, the air flow fan 12 works, the air flow fan 12 can enable air in the furnace body to continuously circulate through the air return pipe 11, the air is enabled to be circularly heated in the furnace body, secondary heat transfer balance is conducted on the quartz ampoule by the fact that the heated air circularly flows between the quartz ampoule and the furnace body heat balance inner pipe 8, the quartz ampoule is enabled to be heated more uniformly, temperature fluctuation of a furnace section and nonuniformity of axial temperature gradients caused by nonuniformity of radiant heat due to the fact that the winding direction of the thermocouple 9 is not perpendicular to the central line of the furnace chamber are further reduced, a stable temperature field and uniform temperature gradients are guaranteed to be obtained in the inner cavity of the furnace body 6, and high-quality single crystal materials with few defects are grown.
In the invention, the feeding mechanism 14 comprises a base 17, a screw rod 18, a main lifting servo motor 19, a sliding seat 20, a micro-lifting servo motor 21 and a feeding rod 22, the base 17 is fixedly installed at the bottom of the installation plate 13, the upper end of the screw rod 18 is installed on the base 17 through a bearing, the lower end of the screw rod 18 is connected with a power output shaft of the main lifting servo motor 19 installed on the support 1 through a coupler, the sliding seat 20 is installed on the screw rod 18, the micro-lifting servo motor 21 is fixedly installed on the sliding seat 20, the power output shaft of the micro-lifting servo motor 21 is provided with the feeding rod 22 through the coupler, and the feeding seat 15 is slidably installed on the feeding rod 22. The main lifting servo motor 19 of the feeding mechanism 14 is controlled by the feeding base 15 to drive the screw rod 18 to rotate, and the screw rod 18 drives the sliding base 20 mounted on the screw rod to move up or down in the rotating process. When a quartz ampoule containing raw materials is required to be placed in a furnace cavity, a sliding seat 20 on a screw rod 18 is driven to move downwards by the work of a main lifting servo motor 19, so that a micro lifting servo motor 21 arranged on the sliding seat 20 and a feeding rod 22 connected with the micro lifting servo motor 21 are driven to move downwards by the sliding seat 20, the feeding rod 22 can drive a feeding seat 15 arranged on the sliding seat 15 to move downwards in the moving process, after the feeding seat 15 moves downwards to a proper position, the quartz ampoule containing the raw materials is placed on the feeding seat 15, the main lifting servo motor 19 is controlled to work by a control module 10 to drive the sliding seat 20 to move upwards, the quartz ampoule on the feeding seat 15 is pushed by the sliding seat 20 to enter the initial position of the furnace cavity, after the quartz ampoule reaches the initial position of the furnace cavity, the main lifting servo motor 19 stops working, at the moment, the micro lifting servo motor 21 is controlled by the control module 10 to work, the micro-lifting servo motor 21 drives the feeding rod 22 to rotate, the feeding rod 22 drives the feeding seat 15 to move up slowly along the feeding seat in the active process, and the feeding seat 15 pushes the quartz ampoule containing the raw materials to move up slowly in the furnace body in the slow moving up process, so that the quartz ampoule moves up slowly from low temperature to high temperature in a gradient temperature field formed in the furnace body, and the production of the single crystal material is realized.
In the invention, the outsides of the screw rod 18 and the feed rod 22 are respectively provided with a corrugated hose 23 which is fixed between the sliding seat 20 and the mounting plate 13 and used for dust prevention, and the corrugated hose 23 is used as a dust cover, so that the dust prevention can be realized, and the upward movement and the downward movement of the sliding seat 20 can not be influenced.
Further, the guide rails 3 are respectively installed at the top of the left side and the top of the right side of the installation plate 13, the slide blocks 4 are installed on the guide rails 3, the fixing frame 2 is fixedly installed on the slide blocks 4 on the guide rails 3 on the left side and the right side of the upper portion of the support 1, the worm and gear lifting mechanism 5 is installed on the support 1 on the lower side of the installation plate 13, and the lifting portion of the worm and gear lifting mechanism 5 is connected with the fixing frame 2. The height of the fixing frame 2 is adjusted by arranging the guide rails 3 and the sliding blocks 4, and the height of the furnace body 6 arranged on the fixing frame 2 is adjusted, so that the quartz ampoules with different lengths can be placed in the furnace chamber in cooperation with the feeding mechanism 14 when the quartz ampoules with different lengths are used for producing single crystal materials. For example, when a quartz ampoule with a long length is used for producing single crystal materials, the feeding mechanism 14 moves the feeding seat 15 downwards to the lowest position, at this time, the control module 10 controls the driving mechanism of the worm and gear lifting mechanism 5 to work, the furnace body 6 on the fixing frame 2 is pushed to move upwards, the lower end of the furnace body is enabled to be at a sufficient height, the quartz ampoule containing raw materials can be accurately placed on the feeding seat 15, then the control module 10 controls the driving mechanism of the worm and gear lifting mechanism 5 to work and the feeding mechanism 14 to work together, the worm and gear lifting mechanism 5 drives the furnace body 6 on the fixing frame 2 to move downwards, and the feeding mechanism 14 pushes the feeding seat 15 to move upwards, so that the quartz ampoule containing raw materials enters a hearth from an inlet of the furnace body 6.
The top of the furnace body 6 is provided with a furnace cover 25 through a pin shaft 24, the furnace cover 25 is provided with a clamping hook, and the furnace body 6 is hinged with a locking handle 26 which is matched with the clamping hook and used for locking the furnace cover 25. By arranging the furnace cover 25 on the top of the furnace body 6, the state in the furnace body 6 can be checked by loosening the locking handle 26 and opening the furnace cover 25.
The working principle of the invention is as follows:
and adjusting a block 27 below the bracket 1 to enable the bracket 1 to be supported on the base 27 and kept in a horizontal state. The locking handle 26 is loosened, the furnace cover 25 is opened, and the normal state of the furnace body 6 is confirmed. The main lifting servo motor 19 puts the quartz ampoule 16 which is packaged with the raw material for single crystal growth into the initial position of the furnace chamber of the furnace body 6. The temperature of each furnace body heat preservation section 7 in the growth process of the single crystal material is controlled by the control module 1, the flow of the circulating heat transfer gas is adjusted by controlling the airflow fan 12, and the micro-lifting servo motor 21 is controlled to drive the quartz ampoule feeding seat 15 to move in a micro-scale manner, so that the moving speed of the quartz ampoule in different temperature areas is controlled, the quartz ampoule is ensured to move slowly, accurately and stably in the furnace body heat balance inner tube 8 and pass through different temperature areas, and the high-quality single crystal material with few defects is grown.
The invention controls the power supply current of the thermocouple through the control module, thereby controlling the heating temperature in the multi-section furnace body heat balance inner pipe from bottom to top in the furnace body. The airflow fan provides circulating gas flow, controls gas to circularly flow between the quartz ampoule and the furnace body heat balance inner tube to carry out secondary heat transfer balance, and reduces furnace section temperature fluctuation and axial temperature gradient nonuniformity caused by nonuniform radiant heat due to the fact that the winding direction of the thermocouple is not perpendicular to the central line of the furnace, so that an ideal stable temperature field and a uniform temperature gradient are formed in the inner cavity of the furnace body heat balance inner tube, and a temperature environment suitable for growth of single crystal materials is obtained.
Finally, it is noted that the above-mentioned preferred embodiments illustrate rather than limit the invention, and that, although the invention has been described in detail with reference to the above-mentioned preferred embodiments, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the invention as defined by the appended claims.
Claims (5)
1. A single crystal material growing device utilizing gas circulation heat transfer and temperature control is characterized in that: the single crystal material growing device utilizing gas circulation heat transfer and temperature control comprises a support (1), a fixing frame (2), a furnace body (6), a furnace body heat preservation section (7), a furnace body heat balance inner tube (8), a thermocouple (9), a control module (10), a return air pipe (11), an air flow fan (12), a mounting plate (13) and a feeding mechanism (14), wherein the mounting plate (13) is fixedly mounted on the support (1), the fixing frame (2) is mounted on the mounting plate (13), the furnace body (6) is fixedly mounted on the fixing frame (2), 3-11 sections of furnace body heat balance inner tubes (8) coaxial with the furnace body (6) are mounted in an inner cavity of the furnace body (6), the 3-11 sections of furnace body heat balance inner tubes (8) are sequentially mounted from bottom to top, the heat preservation section (7) is respectively arranged between each section of furnace body heat balance inner tube (8) and the, each section of furnace body heat preservation section (7) is internally provided with a thermocouple (9) for heating the furnace body heat preservation section, the thermocouple (9) is respectively connected with a control module (10), and the temperature of the 3-11 sections of furnace body heat balance inner pipes (8) is sequentially increased from bottom to top; the bottom of the furnace body (6) is provided with an inlet which is right opposite to a furnace chamber formed by assembling 3-11 sections of furnace body heat balance inner pipes (8), the top of the furnace chamber is communicated with the inlet through a return air pipe (11) positioned outside the furnace body (6), the return air pipe (11) is provided with an airflow fan (12), the airflow fan (12) is fixedly arranged on the fixed frame (2), and the airflow fan (12) is connected with the control module (10); the bracket (1) is provided with a feeding mechanism (14), and the feeding mechanism (14) is provided with a feeding seat (15) which is opposite to the inlet of the furnace body (6).
2. The apparatus for growing single crystal material by utilizing gas circulation to transfer heat and control temperature according to claim 1, wherein: feeding mechanism (14) including base (17), lead screw (18), main lift servo motor (19), sliding seat (20), microlitre drop servo motor (21), feed rod (22), base (17) fixed mounting in the bottom of mounting panel (13), the upper end of lead screw (18) is passed through the bearing and is installed on base (17), the lower extreme of lead screw (18) passes through the shaft coupling and installs the power take off hub connection of main lift servo motor (19) on support (1), install sliding seat (20) on lead screw (18), microlitre drop servo motor (21) fixed mounting is on sliding seat (20), the power take off hub connection of microlitre drop servo motor (21) installs feed rod (22), but feed seat (15) slidable mounting is on feed rod (22).
3. The apparatus for growing single crystal material by utilizing gas circulation to transfer heat and control temperature according to claim 2, wherein: and corrugated hoses (23) which are fixed between the sliding seat (20) and the mounting plate (13) and used for dust prevention are respectively arranged outside the screw rod (18) and the feeding rod (22).
4. The apparatus for growing the single crystal material with temperature control by gas circulation heat transfer according to any one of claims 1 to 3, wherein: the left and right sides top of mounting panel (13) install guide rail (3) respectively, install slider (4) on guide rail (3), on slider (4) on mount (2) fixed mounting on the upper portion left and right sides guide rail (3) of support (1), install worm gear elevating system (5) on support (1) of mounting panel (13) downside, the lift portion and the mount (2) of worm gear elevating system (5) are connected.
5. The apparatus for growing single crystal material by utilizing gas circulation heat transfer and temperature control according to claim 4, wherein: the furnace body (6) top install a bell (25) through round pin axle (24), be provided with a trip on bell (25), furnace body (6) articulated have one with trip match be used for locking bell (25) locking handle (26).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202011348617.4A CN112708929A (en) | 2020-11-26 | 2020-11-26 | Single crystal material growing device utilizing gas circulation heat transfer temperature control |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011348617.4A CN112708929A (en) | 2020-11-26 | 2020-11-26 | Single crystal material growing device utilizing gas circulation heat transfer temperature control |
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| CN112708929A true CN112708929A (en) | 2021-04-27 |
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| CN202011348617.4A Pending CN112708929A (en) | 2020-11-26 | 2020-11-26 | Single crystal material growing device utilizing gas circulation heat transfer temperature control |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117542767A (en) * | 2024-01-10 | 2024-02-09 | 合肥费舍罗热工装备有限公司 | Vertical semiconductor welding furnace |
| CN117568915A (en) * | 2023-10-20 | 2024-02-20 | 深圳市中金岭南有色金属股份有限公司韶关冶炼厂 | Controllable indium phosphide monocrystal growth device and growth method |
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| US5769944A (en) * | 1995-12-19 | 1998-06-23 | Korea Institute Of Science And Technology | Vertical gradient freeze and vertical Bridgman compound semiconductor crystal growth apparatus capable of applying axial magnetic field |
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| CN106197024A (en) * | 2016-08-22 | 2016-12-07 | 苏州工业园区姑苏科技有限公司 | A kind of engineering plastics coating sintering furnace |
| CN108411366A (en) * | 2018-06-12 | 2018-08-17 | 山东大学 | A kind of grower and method of mercurous chloride monocrystal |
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| US5685907A (en) * | 1994-06-02 | 1997-11-11 | Kabushiki Kaisha Kobe Seiko Sho | Apparatus for preparing compound single crystals |
| US5769944A (en) * | 1995-12-19 | 1998-06-23 | Korea Institute Of Science And Technology | Vertical gradient freeze and vertical Bridgman compound semiconductor crystal growth apparatus capable of applying axial magnetic field |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117568915A (en) * | 2023-10-20 | 2024-02-20 | 深圳市中金岭南有色金属股份有限公司韶关冶炼厂 | Controllable indium phosphide monocrystal growth device and growth method |
| CN117542767A (en) * | 2024-01-10 | 2024-02-09 | 合肥费舍罗热工装备有限公司 | Vertical semiconductor welding furnace |
| CN117542767B (en) * | 2024-01-10 | 2024-03-26 | 合肥费舍罗热工装备有限公司 | Vertical semiconductor welding furnace |
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Application publication date: 20210427 |