CN112703614A - 显示基板及其制作方法 - Google Patents
显示基板及其制作方法 Download PDFInfo
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- CN112703614A CN112703614A CN201980001464.5A CN201980001464A CN112703614A CN 112703614 A CN112703614 A CN 112703614A CN 201980001464 A CN201980001464 A CN 201980001464A CN 112703614 A CN112703614 A CN 112703614A
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
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- 125000006850 spacer group Chemical group 0.000 claims abstract description 111
- 239000002346 layers by function Substances 0.000 claims abstract description 72
- 238000000034 method Methods 0.000 claims abstract description 39
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- 239000002585 base Substances 0.000 description 42
- 230000008569 process Effects 0.000 description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 229910052710 silicon Inorganic materials 0.000 description 25
- 239000010703 silicon Substances 0.000 description 25
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
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- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
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- 230000004044 response Effects 0.000 description 3
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
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- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
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- 229910052719 titanium Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- QMZLVVGXNPIXFS-UHFFFAOYSA-N 2,5-bis(2-octyldodecyl)-1-thiophen-2-yl-4-[5-(5-thiophen-2-ylthiophen-2-yl)thiophen-2-yl]pyrrolo[3,4-c]pyrrole-3,6-dione Chemical compound C(CCCCCCC)C(CN1C(C2=C(N(C(C2=C1C=1SC=CC=1)=O)CC(CCCCCCCCCC)CCCCCCCC)C=1SC(=CC=1)C=1SC(=CC=1)C=1SC=CC=1)=O)CCCCCCCCCC QMZLVVGXNPIXFS-UHFFFAOYSA-N 0.000 description 1
- MSDMPJCOOXURQD-UHFFFAOYSA-N C545T Chemical compound C1=CC=C2SC(C3=CC=4C=C5C6=C(C=4OC3=O)C(C)(C)CCN6CCC5(C)C)=NC2=C1 MSDMPJCOOXURQD-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
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- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
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- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
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- 229910052744 lithium Inorganic materials 0.000 description 1
- -1 lithium (Li) Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/19—Tandem OLEDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
一种显示基板及其制作方法，该显示基板具有相邻的第一子像素区和第二子像素区，该显示基板包括衬底基板、依次设置于该衬底基板上的第一导电层、有机功能层和第二导电层，该有机功能层包括电荷生成层，该电荷生成层包括分别位于该第一子像素区和该第二子像素区的第一电荷生成层部分和第二电荷生成层部分，该显示基板还包括位于第一子像素区和第二子像素区的间隔体，该间隔体将该第一电荷生成层部分和该第二电荷生成层部分断开，该电荷生成层还包括第三电荷生成层部分，该第三电荷生成层部分位于该间隔体和该第二导电层之间，且分别与该第一电荷生成层部分和该第二电荷生成层部分断开。该显示基板可以有效防止子像素间的漏电和串色。
Description
PCT国内申请，说明书已公开。
Claims (22)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/102311 WO2021035418A1 (zh) | 2019-08-23 | 2019-08-23 | 显示基板及其制作方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112703614A true CN112703614A (zh) | 2021-04-23 |
Family
ID=74684778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980001464.5A Pending CN112703614A (zh) | 2019-08-23 | 2019-08-23 | 显示基板及其制作方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11183542B2 (zh) |
| EP (1) | EP4020608A4 (zh) |
| CN (1) | CN112703614A (zh) |
| WO (1) | WO2021035418A1 (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110071155A (zh) * | 2019-04-26 | 2019-07-30 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其封装方法、显示装置 |
| CN111312772B (zh) * | 2020-02-25 | 2022-10-25 | 京东方科技集团股份有限公司 | Oled显示基板及其制作方法、显示装置 |
| CN114512620A (zh) * | 2020-11-26 | 2022-05-17 | 武汉天马微电子有限公司 | Oled发光装置、显示装置、电子设备和oled发光装置的制造方法 |
| EP4300473A4 (en) * | 2021-07-21 | 2024-07-10 | Boe Technology Group Co Ltd | DISPLAY SUBSTRATE AND DISPLAY APPARATUS |
| KR20230025621A (ko) * | 2021-08-13 | 2023-02-22 | 삼성디스플레이 주식회사 | 표시 장치 |
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| CN206250196U (zh) * | 2016-11-09 | 2017-06-13 | 昆山国显光电有限公司 | Oled触控显示面板及触控显示装置 |
| CN107369702A (zh) * | 2017-08-16 | 2017-11-21 | 武汉华星光电半导体显示技术有限公司 | 一种oled显示面板及其制作方法 |
| CN107425131A (zh) * | 2017-09-13 | 2017-12-01 | 京东方科技集团股份有限公司 | 一种woled器件及其制作方法 |
| CN107968106A (zh) * | 2017-05-11 | 2018-04-27 | 广东聚华印刷显示技术有限公司 | Oled显示面板及其制作方法和应用 |
| CN109742122A (zh) * | 2019-01-10 | 2019-05-10 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、显示面板 |
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| JP6076683B2 (ja) * | 2012-10-17 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 発光装置 |
| KR20160066234A (ko) * | 2014-12-02 | 2016-06-10 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
| US20180294319A1 (en) * | 2017-04-10 | 2018-10-11 | Shenzhen China Optoelectronics Technology Co., Ltd. | Woled display device |
| JP2018182014A (ja) | 2017-04-11 | 2018-11-15 | 株式会社ジャパンディスプレイ | 表示装置、及び表示装置の製造方法 |
| CN108231861B (zh) | 2018-01-29 | 2020-12-04 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示面板 |
| FR3079909B1 (fr) * | 2018-04-05 | 2022-10-14 | Microoled | Dispositif electroluminescent a resolution et fiabilite ameliorees |
| CN108807706A (zh) | 2018-06-05 | 2018-11-13 | 佛山科学技术学院 | 一种白光串联有机电致发光器件 |
| US11839093B2 (en) * | 2019-05-14 | 2023-12-05 | Kopin Corporation | Image rendering in organic light emitting diode (OLED) displays, apparatuses, systems, and methods |
| US11610936B2 (en) * | 2019-06-13 | 2023-03-21 | Intel Corporation | Micro light-emitting diode displays having color conversion devices and assembly approaches |
| US11515297B2 (en) * | 2019-06-27 | 2022-11-29 | Intel Corporation | Micro light-emitting diode displays having colloidal or graded index quantum dot films |
| US20200411491A1 (en) * | 2019-06-27 | 2020-12-31 | Intel Corporation | Micro light-emitting diode displays having microgrooves or wells |
| US11610874B2 (en) * | 2019-06-27 | 2023-03-21 | Intel Corporation | Micro light-emitting diode displays having hybrid inorganic-organic pixel structures |
| US11721786B2 (en) * | 2019-06-27 | 2023-08-08 | Intel Corporation | Micro light-emitting diode displays having color correction films applied thereto |
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2019
- 2019-08-23 CN CN201980001464.5A patent/CN112703614A/zh active Pending
- 2019-08-23 EP EP19932228.0A patent/EP4020608A4/en active Pending
- 2019-08-23 US US16/960,573 patent/US11183542B2/en active Active
- 2019-08-23 WO PCT/CN2019/102311 patent/WO2021035418A1/zh unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN206250196U (zh) * | 2016-11-09 | 2017-06-13 | 昆山国显光电有限公司 | Oled触控显示面板及触控显示装置 |
| CN107968106A (zh) * | 2017-05-11 | 2018-04-27 | 广东聚华印刷显示技术有限公司 | Oled显示面板及其制作方法和应用 |
| CN107369702A (zh) * | 2017-08-16 | 2017-11-21 | 武汉华星光电半导体显示技术有限公司 | 一种oled显示面板及其制作方法 |
| CN107425131A (zh) * | 2017-09-13 | 2017-12-01 | 京东方科技集团股份有限公司 | 一种woled器件及其制作方法 |
| CN109742122A (zh) * | 2019-01-10 | 2019-05-10 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、显示面板 |
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| Publication number | Publication date |
|---|---|
| US11183542B2 (en) | 2021-11-23 |
| EP4020608A1 (en) | 2022-06-29 |
| WO2021035418A1 (zh) | 2021-03-04 |
| US20210175296A1 (en) | 2021-06-10 |
| EP4020608A4 (en) | 2022-08-10 |
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