CN112698452A - Optical waveguide chip probe and reflective vertical optical coupling structure based on same - Google Patents

Optical waveguide chip probe and reflective vertical optical coupling structure based on same Download PDF

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Publication number
CN112698452A
CN112698452A CN201911004267.7A CN201911004267A CN112698452A CN 112698452 A CN112698452 A CN 112698452A CN 201911004267 A CN201911004267 A CN 201911004267A CN 112698452 A CN112698452 A CN 112698452A
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optical
waveguide chip
optical waveguide
device layer
chip probe
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李冰
余朝晃
严亭
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Shanghai Institute Of Transmission Line (cetc No23 Institute)
Shanghai Xinji Photon Integration Technology Co ltd
CETC 23 Research Institute
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Shanghai Institute Of Transmission Line (cetc No23 Institute)
Shanghai Xinji Photon Integration Technology Co ltd
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Priority to CN201911004267.7A priority Critical patent/CN112698452A/en
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Abstract

The invention discloses an optical waveguide chip probe structure, comprising: a device layer having a first end coupled to an optical fiber; the buried oxide layer is arranged on the left side of the device layer; the substrate layer is arranged on the left side of the oxygen buried layer; a first slope obliquely cut from the substrate layer to the device layer, the termination point exceeding an extension of a centerline of a corresponding optical fiber in the device layer.

Description

Optical waveguide chip probe and reflective vertical optical coupling structure based on same
Technical Field
The invention relates to the field of photonic integration, in particular to an optical waveguide chip probe and a reflective vertical optical coupling structure based on the probe.
Background
With the demand of high-speed information development of modern society, the optical communication technology based on integrated optical devices is developed vigorously, wherein the silicon material waveguide manufacturing process based on the insulating substrate has obvious advantages in industrialization because of being compatible with the traditional Complementary Metal Oxide Semiconductor (CMOS) process, and the photoelectric hybrid integration can be realized. In the field of optical communications, optical signals are transmitted primarily by means of optical fibers. For the silica-based waveguide, since the luminous efficiency of the silica-based waveguide cannot meet practical requirements, the light source needs to be introduced from the outside by using the optical fiber, and therefore, one of the key problems is how to realize the high-efficiency coupling of the optical fiber and the waveguide device.
In addition, in the development process of optical chips, in order to reduce cost and improve efficiency, the chips need to be tested before packaging of the devices. In order to improve the efficiency of testing large-batch optical chips, a manual coupling platform is abandoned, and an effective and reliable coupling scheme is adopted to realize the wafer-level chip testing on an automatic platform.
At present, there are two main coupling modes for optical chips, namely grating coupling and end-face coupling.
The main advantage of grating coupling is that it can be coupled with cleaved optical fibers and that coupling of light perpendicular to the chip surface can be achieved. Taking an erasable grating coupler as an example, the grating coupler is formed by ion implantation of germanium, and after the test is finished, the grating coupler can be erased by a laser annealing mode. The principle is that the injection of germanium ions leads to the disordered arrangement of crystal lattices of silicon, and monocrystalline silicon is changed into polycrystalline silicon; after annealing, the atoms are rearranged and converted into single crystal silicon. The grating coupling belongs to a surface optical coupling mode, can couple light vertical to the surface of a chip into an optical waveguide chip, and can test each optical chip unit in the wafer on the premise of not cutting the wafer, namely, wafer-level testing is realized; but the main disadvantage is that the coupling loss is large and the coupling bandwidth is small, typically 4.5dB and 50nm, respectively.
The existing end face coupling scheme couples the optical fiber and the waveguide through Taper, and has the advantage that large-bandwidth and ultralow-loss optical coupling can be realized for the optical waveguide which is well matched with the optical fiber mode spot. However, the main disadvantages are that the wafer must be cut, the end faces polished, and the cut optical chip units are tested one by one, so that the wafer level test cannot be realized, and the test efficiency is low.
Aiming at the problems of large coupling loss and small coupling bandwidth in a wafer-level test in the existing coupling mode of an optical chip; the invention provides a waveguide chip probe and a reflection type vertical optical coupling structure based on the probe, which can realize an optical coupling scheme with high coupling efficiency and high testing efficiency for an optical waveguide chip close to an optical fiber mode field, and at least partially overcome the problems.
Disclosure of Invention
Aiming at the problems of large coupling loss and small coupling bandwidth in a wafer-level test in the existing coupling mode of an optical chip; the end face coupling needs to cut the wafer and polish the end face, so that the wafer level test cannot be realized, the test efficiency is low, and the like, according to an embodiment of the invention, the optical waveguide chip probe structure is provided, and comprises:
a device layer having a first end coupled to an optical fiber;
the buried oxide layer is arranged on the left side of the device layer;
the substrate layer is arranged on the left side of the oxygen buried layer;
a first slope obliquely cut from the substrate layer to the device layer, the termination point exceeding an extension of a centerline of a corresponding optical fiber in the device layer.
In one embodiment of the present invention, the optical waveguide chip probe structure further includes a second inclined plane, the second inclined plane is obliquely cut from the device layer to the central position, and the termination point of the second inclined plane does not exceed the extension line of the central line of the corresponding optical fiber in the device layer.
In one embodiment of the present invention, the second bevel intersects the first bevel forming a sharp corner at the second end of the device layer.
In one embodiment of the invention, the first slope is provided with an antireflection film.
In one embodiment of the invention, the second inclined plane is provided with an antireflection film.
In an embodiment of the invention, the first inclined plane forms a first included angle with a vertical plane, and the second inclined plane forms a second included angle with the vertical plane, so that a vertical optical signal entering from the first end of the device layer is converted into a horizontal optical signal after being reflected by the first inclined plane and transmitted by the second inclined plane.
In one embodiment of the present invention, the first included angle is 40 degrees; the second included angle is 17 degrees.
In one embodiment of the invention, the material of the device layer is selected from one or more of lithium niobate (LiNbO3), a group iii-v semiconductor compound, silicon dioxide, indium phosphide (InP), indium gallium arsenide (InGaAs).
According to another embodiment of the present invention, there is provided a reflective vertical optical coupling structure based on an optical waveguide chip probe, including:
an optical fiber;
the optical fiber is coupled and connected to the optical waveguide chip probe; and
the optical chip to be tested is provided with a groove, the optical waveguide chip probe is inserted into the groove, the vertical optical signal from the optical fiber is reflected into a horizontal optical signal, and then the horizontal optical signal is coupled to the optical chip to be tested from the side surface of the groove.
In another embodiment of the present invention, the optical waveguide chip probe further comprises:
a device layer having a first end coupled to the optical fiber;
the buried oxide layer is arranged on the left side of the device layer;
the substrate layer is arranged on the left side of the oxygen buried layer;
a first slope that slopes obliquely from the substrate layer to the device layer, the termination point exceeding an extension of the device layer corresponding to the centerline of the optical fiber.
In another embodiment of the present invention, the optical waveguide chip probe further includes a second inclined plane, the second inclined plane is obliquely inclined from the device layer to the central position, and the terminating point of the second inclined plane does not exceed the extension line of the central line of the corresponding optical fiber in the device layer.
In another embodiment of the present invention, the second bevel of the optical waveguide chip probe intersects the first bevel to form a sharp corner at the second end of the device layer.
In another embodiment of the present invention, the second inclined plane of the optical waveguide chip probe is provided with an antireflection film; the first inclined plane of the optical waveguide chip probe is provided with a reflecting film.
In another embodiment of the present invention, the first inclined plane forms a first included angle with the vertical plane, and the second inclined plane forms a second included angle with the vertical plane, so that a vertical optical signal entering from the first end of the device layer is converted into a horizontal optical signal after being reflected by the first inclined plane and transmitted by the second inclined plane.
In another embodiment of the present invention, the first included angle is 45 degrees; the second included angle is 0 degree.
In another embodiment of the present invention, the optical chip to be tested further includes:
a device layer;
a buried oxide layer disposed below the device layer;
a substrate layer disposed below the buried oxide layer; and
the groove is formed by etching, the width of the groove is larger than 100 micrometers, the depth of the groove needs to be larger than the thickness of the device layer, and the cross section of the groove is square, rectangular, circular arc or triangular when viewed from the cross section perpendicular to the length direction of the groove.
In another embodiment of the present invention, the optical fiber is an optical fiber array, and the optical fiber array is coupled in a line to the first end of the device layer of the optical waveguide chip probe.
The invention provides an optical waveguide chip probe and a reflective vertical optical coupling structure based on the probe. The optical waveguide chip probe is provided with a first inclined plane which forms a first angle with the vertical plane and is provided with an antireflection film, and a second inclined plane which forms a second angle with the vertical plane and is provided with an antireflection film is arranged on the opposite side of the first inclined plane. The optical fiber is vertically coupled with the optical waveguide chip probe, so that an optical signal from the optical fiber can vertically enter the optical waveguide chip probe, is reflected by the first inclined surface and then is transmitted by the second inclined surface to form a horizontal optical signal to be emitted. The vertical incident light can be coupled into the optical waveguide chip to be tested through the etching groove of the optical waveguide chip to be tested, and the coupling loss is only about 3.4dB by taking a silicon-based waveguide as an example.
Drawings
To further clarify the above and other advantages and features of embodiments of the present invention, a more particular description of embodiments of the invention will be rendered by reference to the appended drawings. It is appreciated that these drawings depict only typical embodiments of the invention and are therefore not to be considered limiting of its scope. In the drawings, the same or corresponding parts will be denoted by the same or similar reference numerals for clarity.
FIG. 1 shows a cross-sectional schematic view of an optical waveguide chip probe structure 100 according to one embodiment of the invention.
FIG. 2 shows a cross-sectional view along AA' of an optical waveguide chip probe structure 100 according to one embodiment of the present invention.
Fig. 3 is a schematic cross-sectional view of a reflective vertical optical coupling structure 300 based on an optical waveguide chip probe according to an embodiment of the present invention.
Fig. 4 shows a schematic distribution diagram 400 of an optical fiber array on a coupling end surface of an optical waveguide chip probe in a reflective vertical optical coupling structure based on the optical waveguide chip probe according to an embodiment of the present invention.
Fig. 5 shows a cross-sectional schematic view of an optical waveguide chip probe structure 500 according to another embodiment of the invention.
Fig. 6 shows a schematic cross-sectional view of an optical waveguide chip probe structure 500 according to yet another embodiment of the invention.
Detailed Description
In the following description, the invention is described with reference to various embodiments. One skilled in the relevant art will recognize, however, that the embodiments may be practiced without one or more of the specific details, or with other alternative and/or additional methods, materials, or components. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring aspects of embodiments of the invention. Similarly, for purposes of explanation, specific numbers, materials and configurations are set forth in order to provide a thorough understanding of the embodiments of the invention. However, the invention may be practiced without specific details. Further, it should be understood that the embodiments shown in the figures are illustrative representations and are not necessarily drawn to scale.
Reference in the specification to "one embodiment" or "the embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment.
It should be noted that, in the embodiments of the present invention, the process steps are described in a specific order, however, this is only for convenience of distinguishing the steps, and the order of the steps is not limited, and in different embodiments of the present invention, the order of the steps may be adjusted according to the adjustment of the process.
The invention provides an optical waveguide chip probe and a reflective vertical optical coupling structure based on the probe. The optical waveguide chip probe is provided with a first inclined plane which forms a first angle with the vertical plane and is provided with an antireflection film, and a second inclined plane which forms a second angle with the vertical plane and is provided with an antireflection film is arranged on the opposite side of the first inclined plane. The optical fiber is vertically coupled with the optical waveguide chip probe, so that an optical signal from the optical fiber can vertically enter the optical waveguide chip probe, is reflected by the first inclined surface and then is transmitted by the second inclined surface to form a horizontal optical signal to be emitted. The vertical incident light can be coupled into the optical waveguide chip to be tested through the etching groove of the optical waveguide chip to be tested, and the coupling loss is only about 3.4dB by taking a silicon-based waveguide as an example.
An optical waveguide chip probe structure according to an embodiment of the present invention is described in detail below with reference to fig. 1 and 2. FIG. 1 shows a schematic cross-sectional view of an optical waveguide chip probe structure 100 according to an embodiment of the invention; FIG. 2 shows a cross-sectional view along AA' of an optical waveguide chip probe structure 100 according to one embodiment of the present invention. As shown in fig. 1 and 2, the optical waveguide chip probe structure 100 further includes a device layer 110, a buried oxide layer 120, a substrate layer 130, a first inclined plane 140, and a second inclined plane 150.
The material of the optical waveguide chip probe structure 100 may be selected from Silicon-on-Insulator (SOI), lithium niobate (LiNbO3), iii-v semiconductor compounds, Silicon dioxide, indium phosphide (InP), indium gallium arsenide (InGaAs), and other materials that may be used in integrated optical waveguide fabrication.
One end of the optical waveguide chip probe structure 100 is a planar structure, and an optical fiber can be vertically coupled to the device layer 110 on which the planar structure is located. In one embodiment of the present invention, the device layer 110 is a waveguide layer and the optical fiber and waveguide are coupled by a UV photoresist or other material connection.
The other end of the optical waveguide chip probe structure 100 is cut with two inclined planes, which are a first inclined plane 140 and a second inclined plane 150. The first inclined plane 140 is cut from the substrate layer 130 of the optical waveguide chip probe structure 100 to the device layer 110, and the included angle between the first inclined plane 140 and the vertical plane is α; the second inclined plane 150 is cut from the device layer 110 of the optical waveguide chip probe structure 100 toward the center, and its termination point does not exceed the position of the device layer 110 at an angle β from the extension line 160 of the center line of the optical fiber. When an angle alpha of 31 degrees is selected in one embodiment of the invention, the angle beta is 45 degrees. In another embodiment of the present invention, when the angle α is selected to be 40 degrees, the angle β is 17 degrees. In yet another embodiment of the present invention, when the angle α is selected to be 45 degrees, the angle β is 0 degrees. In one embodiment of the present invention, the first inclined plane 140 is provided with an antireflection film, and the second inclined plane 150 is provided with an antireflection film. Based on the design of the present invention, the incident light from the optical fiber vertically enters the device layer 110 (waveguide) of the optical waveguide chip probe structure 100, and then is reflected by the first inclined plane 140 forming a first angle with the vertical plane, and then exits from the second inclined plane 150 along the horizontal direction.
The scheme for vertical optical coupling using the optical waveguide chip probe 100 will be described in detail with reference to fig. 3. Fig. 3 is a schematic cross-sectional view of a reflective vertical optical coupling structure 300 based on an optical waveguide chip probe according to an embodiment of the present invention. As shown in fig. 3, the reflective vertical optical coupling structure 300 based on the optical waveguide chip probe includes an optical fiber 310, an optical waveguide chip probe 320, and an optical chip 330 to be tested.
The optical fiber 310 is used to conduct and input the test optical signal. In one embodiment of the present invention, optical fiber 310 is an optical fiber array of a plurality of optical fibers.
Optical waveguide chip probe 320 further includes a device layer 321, a buried oxide layer 322, a substrate layer 323, a first bevel 324, and a second bevel 325. The optical fiber 310 may be vertically coupled to the device layer 321 of the upper end face of the optical waveguide chip probe 320. In one embodiment of the present invention, first angled surface 324 is a reflective angled surface that is angled from vertical at a first angle, from substrate layer 323 to device layer 321, and beyond the extension 326 of the centerline of the corresponding optical fiber in device layer 321; second angled surface 325 is a transmissive angled surface that is angled away from the device layer 321 toward the center at a second angle from the vertical, but terminates no further than an extension 326 of the centerline of the corresponding optical fiber 310 in the device layer 321. In another embodiment of the present invention, the first inclined plane 324 is provided with an anti-reflection film (not shown); the second inclined plane 325 is provided with an antireflection film (not shown). In another embodiment of the present invention, the first inclined surface 324 intersects the second inclined surface 325 to form a sharp corner. In yet another embodiment of the present invention, the first inclined surface 324 does not intersect the second inclined surface 325, and the bottom surface has a platform. Based on the design of the optical waveguide chip probe 320 of the present invention, the incident light from the optical fiber 310 vertically enters the device layer 321 (waveguide) of the optical waveguide chip probe structure 320, and then is reflected by the first inclined plane 324 forming an angle of 45 degrees with the horizontal plane and then exits from the second inclined plane 325 in the horizontal direction.
The optical chip 330 to be tested further comprises a device layer 331, a buried oxide layer 332, a substrate layer 333 and a trench 334. In one embodiment of the present invention, device layer 331 is a device region of an optical chip, such as an optical waveguide region; the buried oxide layer 332 is typically a silicon oxide layer, the substrate layer 333 is a silicon substrate, and the trench 334 is a groove formed by etching, and the structure of the trench 334 may be square, rectangular, circular arc, or triangular when viewed from the side. The sharp corner formed by the first inclined surface 324 and the second inclined surface 325 of the optical waveguide chip probe 320 is inserted into the slot 334 of the optical chip to be tested 330, so as to form a vertical optical signal from the optical fiber 310, and the vertical optical signal is reflected into a horizontal optical signal by the optical waveguide chip probe 320 and enters the optical chip to be tested 330 through the slot 334 of the optical chip to be tested 330. In yet another embodiment of the present invention, trench 334 has a width greater than 100 microns, a length greater than 10 microns, and a depth greater than the thickness of device layer 331. Based on the scheme provided by the invention, the vertical incident light can be coupled into the optical waveguide chip to be tested, taking a silicon-based waveguide as an example, the coupling loss is about 3.4 dB.
In an embodiment of the present invention, the optical waveguide chip probe may be connected to a plurality of optical fibers, and may perform wafer level testing for one or more optical chips to be tested. Fig. 4 shows a schematic distribution diagram 400 of an optical fiber array on a coupling end surface of an optical waveguide chip probe in a reflective vertical optical coupling structure based on the optical waveguide chip probe according to an embodiment of the present invention. As shown in FIG. 4, the optical waveguide chip probe 410 can be coupled to a plurality of optical fibers 420-1, 420-2 … … 420-N simultaneously.
Different structures of the probe structure of the optical waveguide chip will be described with reference to fig. 5 and 6. FIG. 5 shows a schematic cross-sectional view of an optical waveguide chip probe structure 500 according to another embodiment of the invention; fig. 6 shows a schematic cross-sectional view of an optical waveguide chip probe structure 500 according to yet another embodiment of the invention. Compared with fig. 1, the only difference in fig. 5 is that the second inclined surface 550 does not intersect with the first inclined surface 540, a small platform is formed on the bottom surface of the optical waveguide chip probe structure 500, and the other scheme is similar to the optical waveguide chip probe structure 100 shown in fig. 1. In contrast to FIG. 1, FIG. 6 only differs in that the second inclined surface is absent, and the optical signal reflected by the first inclined surface 640 is directly emitted from the right side of the device layer 610, and otherwise is similar to the optical waveguide chip probe structure 100 shown in FIG. 1.
The invention provides the optical waveguide chip probe and the reflective vertical optical coupling structure based on the probe. The optical waveguide chip probe is provided with a first inclined plane which forms a first angle with the vertical plane and is provided with an antireflection film, and a second inclined plane which forms a second angle with the vertical plane and is provided with an antireflection film is arranged on the opposite side of the first inclined plane. The optical fiber is vertically coupled with the optical waveguide chip probe, so that an optical signal from the optical fiber can vertically enter the optical waveguide chip probe, is reflected by the first inclined surface and then is transmitted by the second inclined surface to form a horizontal optical signal to be emitted. The vertical incident light can be coupled into the optical waveguide chip to be tested through the etching groove of the optical waveguide chip to be tested, and the coupling loss is only about 3.4dB by taking a silicon-based waveguide as an example.
While various embodiments of the present invention have been described above, it should be understood that they have been presented by way of example only, and not limitation. It will be apparent to persons skilled in the relevant art that various combinations, modifications, and changes can be made thereto without departing from the spirit and scope of the invention. Thus, the breadth and scope of the present invention disclosed herein should not be limited by any of the above-described exemplary embodiments, but should be defined only in accordance with the following claims and their equivalents.

Claims (15)

1. An optical waveguide chip probe structure comprising:
a device layer having a first end coupled to an optical fiber;
the buried oxide layer is arranged on the left side of the device layer;
the substrate layer is arranged on the left side of the oxygen buried layer;
a first slope obliquely cut from the substrate layer to the device layer, the termination point exceeding an extension of a centerline of a corresponding optical fiber in the device layer.
2. The optical waveguide chip probe structure of claim 1 further comprising a second bevel, said second bevel being obliquely cut from said device layer toward a center location and terminating no further than an extension of a centerline of a corresponding optical fiber in said device layer.
3. The optical waveguide chip probe structure of claim 2 wherein said second bevel intersects said first bevel to form a sharp corner at a second end of said device layer.
4. The optical waveguide chip probe structure of claim 1, wherein said first slope is provided with an antireflection film.
5. The optical waveguide chip probe structure of claim 2, wherein the second bevel is provided with an antireflection film.
6. The optical waveguide chip probe structure of claim 1, wherein the first inclined plane forms a first angle with the vertical plane, and the second inclined plane forms a second angle with the vertical plane, wherein the first angle does not exceed 45 degrees, so that a vertical optical signal entering from the first end of the device layer is converted into a horizontal optical signal after being reflected by the first inclined plane and transmitted by the second inclined plane.
7. The optical waveguide chip probe structure of claim 1, wherein the device layer is made of a material selected from one or more of silicon-on-insulator SOI, silicon, lithium niobate LiNbO3, group iii-v semiconductor compounds, silicon dioxide, indium phosphide InP, indium gallium arsenide InGaAs.
8. A reflective vertical optical coupling structure based on an optical waveguide chip probe comprises:
an optical fiber;
the optical fiber is coupled and connected to the optical waveguide chip probe; and
the optical chip to be tested is provided with a groove, the optical waveguide chip probe is inserted into the groove, the vertical optical signal from the optical fiber is reflected into a horizontal optical signal, and then the horizontal optical signal is coupled to the optical chip to be tested from the side surface of the groove.
9. The optical waveguide chip probe-based reflective vertical optical coupling structure of claim 8, wherein the optical waveguide chip probe further comprises:
a device layer having a first end coupled to the optical fiber;
the buried oxide layer is arranged on the left side of the device layer;
the substrate layer is arranged on the left side of the oxygen buried layer;
a first slope that slopes obliquely from the substrate layer to the device layer, the termination point exceeding an extension of the device layer corresponding to the centerline of the optical fiber.
10. The optical waveguide chip probe-based reflective vertical optical coupling structure of claim 9 wherein said optical waveguide chip probe further comprises a second angled surface, said second angled surface being obliquely cut from said device layer toward a center position, said second angled surface terminating no further than an extension of a centerline of a corresponding optical fiber in said device layer.
11. The optical waveguide chip probe-based reflective vertical optical coupling structure of claim 10 wherein said second angled surface of said optical waveguide chip probe intersects said first angled surface forming a sharp corner at a second end of said device layer.
12. The reflective vertical optical coupling structure based on the optical waveguide chip probe according to claim 10, wherein the second inclined plane of the optical waveguide chip probe is provided with an antireflection film; the first inclined plane of the optical waveguide chip probe is provided with an antireflection film.
13. The optical waveguide chip probe-based reflective vertical optical coupling structure of claim 10 or 11, wherein the first inclined plane forms a first angle with the vertical plane, the second inclined plane forms a second angle with the vertical plane, and the first angle is not more than 45 degrees, so that a vertical optical signal entering from the first end of the device layer is converted into a horizontal optical signal after being reflected by the first inclined plane and transmitted by the second inclined plane.
14. The optical waveguide chip probe-based reflective vertical optical coupling structure of claim 8, wherein the optical chip under test further comprises:
a device layer;
a buried oxide layer disposed below the device layer;
a substrate layer disposed below the buried oxide layer; and
the groove is formed by etching, the width of the groove is larger than 100 micrometers, the depth of the groove needs to be larger than the thickness of the device layer, and the cross section of the groove is square, rectangular, circular arc or triangular when viewed from the cross section perpendicular to the length direction of the groove.
15. The optical waveguide chip probe-based reflective vertical optical coupling structure of claim 8, wherein said optical fiber is an optical fiber array, said optical fiber array being coupled in-line to a first end of said device layer of said optical waveguide chip probe.
CN201911004267.7A 2019-10-22 2019-10-22 Optical waveguide chip probe and reflective vertical optical coupling structure based on same Pending CN112698452A (en)

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WO2024045805A1 (en) * 2022-09-01 2024-03-07 华为技术有限公司 Optical assembly, optical chip, electronic device, and optical communication system

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WO2024045805A1 (en) * 2022-09-01 2024-03-07 华为技术有限公司 Optical assembly, optical chip, electronic device, and optical communication system

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Application publication date: 20210423