CN112695286A - Method for forming low-resistivity ITO target material powder - Google Patents
Method for forming low-resistivity ITO target material powder Download PDFInfo
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- CN112695286A CN112695286A CN202011477158.XA CN202011477158A CN112695286A CN 112695286 A CN112695286 A CN 112695286A CN 202011477158 A CN202011477158 A CN 202011477158A CN 112695286 A CN112695286 A CN 112695286A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/129—Flame spraying
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
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- Application Of Or Painting With Fluid Materials (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
The invention discloses a method for forming low-resistivity ITO target powder, which comprises the steps of feeding the taken ITO powder into a scattering machine, scattering the ITO powder into particles completely through a grinding wheel in the scattering machine, feeding the scattered ITO powder into a dryer, carrying the ITO powder particles with high-pressure mixed gas of N2, H2 and air through a supersonic flame spraying machine to generate supersonic double-phase flow, impacting a substrate in a spraying chamber under a complete solid state, depositing the ITO powder on the surface of the substrate through large plastic flow deformation to form a coating, and thickening the coating layer by layer to obtain an ITO target. The invention has the advantages that the ITO powder is scattered and dried in sequence before use, and the dispersibility and the dryness of the ITO powder are kept.
Description
Technical Field
The invention relates to the technical field of ITO target preparation, in particular to a method for molding low-resistivity ITO target powder.
Background
The technical development trend of target materials is closely related to the development trend of thin film technology in downstream application industries, and the target technology should be changed along with the technical improvement of the application industries on thin film products or elements. As Ic manufacturers have worked for a relatively long time on the development of low resistivity copper wiring, it is expected that the original aluminum film will be largely replaced in the coming years, and thus the development of copper targets and their required barrier target materials will be very slow. In addition, in recent years, Flat Panel Displays (FPDs) have been largely replacing the computer display and television market, which is mainly Cathode Ray Tubes (CRTs), and the technical and market demands for ITO targets have also been greatly increased.
The coating target is a sputtering source which forms various functional films on a substrate by sputtering through magnetron sputtering, multi-arc ion plating or other types of coating systems under proper process conditions. In short, the target material is a target material bombarded by high-speed charged energy particles, and when the target material is used in a high-energy laser weapon, lasers with different power densities, different output waveforms and different wavelengths interact with different target materials, different killing and damaging effects can be generated.
The ITO target belongs to a ceramic target, and ITO powder is sprayed on the target for multiple times in the manufacturing process of the ITO target so as to prepare the ITO target. When the existing ITO target material is manufactured, ITO powder is directly taken out for use, and the ITO powder is likely to be adhered and condensed or has a moist feeling in the storage process, so that the spraying of the ITO powder is influenced.
Disclosure of Invention
The invention aims to provide a method for molding low-resistivity ITO target powder, which has the advantages of sequentially performing scattering and drying operations before the ITO powder is used, maintaining the dispersibility and the dryness of the ITO powder, and solving the problems that the ITO powder is directly taken out for use, and the ITO powder is likely to be sticky and coagulated or has a moist feeling in the storage process, so that the spraying of the ITO powder is influenced.
In order to achieve the purpose, the invention provides the following technical scheme: a method for forming low resistivity ITO target powder comprises the steps of carrying ITO powder particles with high-pressure mixed gas of N2, H2 and air through a supersonic flame spraying machine to generate supersonic double-phase flow, enabling the ITO powder to impact a substrate in a spraying chamber after the ITO powder is completely solidified, enabling the ITO powder to be deposited on the surface of the substrate through large plastic flow deformation to form a coating, and thickening the coating layer by layer to obtain an ITO target;
the molding method comprises the following steps:
s1, N2, H2 and air are sequentially conveyed into the gas mixer according to the proportion, and the N2, the H2 and the air are fully mixed under the action of the gas mixer;
s2, conveying the mixed gas into a compressor for pressurization to enable the mixed gas to become high-pressure gas, and then conveying the pressurized mixed gas into a mixer;
s3, feeding the ITO powder taken out into a scattering machine, and scattering the ITO powder into particles thoroughly by a grinding wheel in the scattering machine;
s4, sending the scattered ITO powder into a dryer for drying to remove moisture;
s5, feeding the processed ITO powder into a mixer, wherein the high-pressure mixed gas carries the ITO powder into a supersonic flame spraying machine;
s6, generating supersonic double-phase flow by the mixed gas and the ITO powder entering the supersonic flame spraying machine under the action of the supersonic flame spraying machine, wherein an ejection pipe orifice of the supersonic flame spraying machine is positioned in the spraying chamber;
s7, conveying the hot-pressed base material into a spraying chamber, clamping the base material by a clamping mechanism in the spraying chamber, wherein the base material corresponds to an ejection pipe orifice of a supersonic flame spraying machine;
s8, carrying the ITO powder to impact the substrate by the high-pressure mixed gas sprayed by the supersonic flame spraying machine, and depositing the ITO powder on the surface of the substrate through large plastic flow deformation to form a coating;
and S9, spraying for 5-6 times, and thickening the coating layer by layer until the ITO target is obtained.
As a further aspect of the invention, an apparatus comprises: gas mixer, compressor, breaker, dryer, mixer, supersonic flame spraying machine and hot press.
As a further scheme of the invention, N2, H2 and air are proportioned according to the proportion of 1:3:6, the proportioned N2, H2 and air are conveyed into a gas mixer to be mixed, and the mixed gas is pressurized by a compressor to form high-pressure mixed gas which is conveyed into the mixer.
As a further scheme of the invention, the taken ITO powder is firstly sent into a scattering machine, the ITO powder is thoroughly scattered into particles by a grinding wheel in the scattering machine, then the scattered ITO powder is sent into a dryer, the temperature of the dryer is adjusted to be between 40 and 50 ℃, the drying is carried out for 10min, and finally the ITO powder is sent into a mixer.
As a further scheme of the invention, the base material for spraying the ITO powder passes through the hot press before being sprayed, and the density of the base material is improved by the hot press.
In a further aspect of the present invention, the interior of the spray chamber is sealed.
In the hot pressing step, the base material for spraying is firstly sent into a hot press, and the hot press carries out hot pressing treatment on the base material, so that the density of the base material is improved.
Compared with the prior art, the invention has the following beneficial effects: and (3) feeding the taken ITO powder into a scattering machine, scattering the ITO powder into particles thoroughly by a grinding wheel in the scattering machine, feeding the scattered ITO powder into a dryer, adjusting the temperature of the dryer to be between 40 and 50 ℃, drying for 10min, and finally feeding the ITO powder into a mixer. Before the ITO powder is used, the ITO powder is scattered and dried in sequence, and the dispersibility and the dryness of the ITO powder are kept.
The base material for spraying ITO powder is firstly passed through the hot press before being sprayed, the density of the base material is improved by the hot press, and low resistivity is realized.
Drawings
FIG. 1 is a schematic flow chart of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front", "rear", "both ends", "one end", "the other end", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "connected," and the like are to be construed broadly, such as "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1
Referring to fig. 1, an embodiment of the present invention: a method for molding low-resistivity ITO target powder comprises the following steps: the high-pressure mixed gas of N2, H2 and air is used for carrying ITO powder particles to generate supersonic speed double-phase flow through the supersonic speed flame spraying machine; the substrate for spraying the ITO powder is firstly passed through a hot press before being sprayed, the density of the substrate is improved through the hot press, the substrate is impacted in a spraying chamber after the substrate is in a solid state, the ITO powder is deposited on the surface of the substrate through large plastic flow deformation to form a coating, and the coating is thickened layer by layer to obtain the ITO target.
N2, H2 and air are proportioned according to the ratio of 1:3:6, the proportioned N2, H2 and the air are conveyed into a gas mixer to be mixed, and the mixed gas is pressurized by a compressor to form high-pressure mixed gas which is conveyed into the mixer; sending the taken ITO powder into a scattering machine, scattering the ITO powder into particles thoroughly by a grinding wheel in the scattering machine, sending the scattered ITO powder into a dryer, adjusting the temperature of the dryer to be between 40 and 50 ℃, drying for 10min, and finally sending the ITO powder into a mixer; and the high-pressure mixed gas carries the ITO powder into a supersonic flame spraying machine for spraying operation.
Before the ITO powder is used, the ITO powder is scattered and dried in sequence, and the dispersibility and the dryness of the ITO powder are kept.
Example 2
The embodiment provided by the invention comprises the following steps: a method for molding low-resistivity ITO target powder comprises the following molding steps:
s1, N2, H2 and air are sequentially conveyed into the gas mixer according to the proportion, and the N2, the H2 and the air are fully mixed under the action of the gas mixer;
s2, conveying the mixed gas into a compressor for pressurization to enable the mixed gas to become high-pressure gas, and then conveying the pressurized mixed gas into a mixer;
s3, feeding the ITO powder taken out into a scattering machine, and scattering the ITO powder into particles thoroughly by a grinding wheel in the scattering machine;
s4, sending the scattered ITO powder into a dryer for drying to remove moisture;
s5, feeding the processed ITO powder into a mixer, wherein the high-pressure mixed gas carries the ITO powder into a supersonic flame spraying machine;
s6, generating supersonic double-phase flow by the mixed gas and the ITO powder entering the supersonic flame spraying machine under the action of the supersonic flame spraying machine, wherein an ejection pipe orifice of the supersonic flame spraying machine is positioned in the spraying chamber;
s7, conveying the base material for spraying into a hot press, and carrying out hot pressing treatment on the base material by the hot press to improve the density of the base material;
s8, conveying the hot-pressed base material into a spraying chamber, clamping the base material by a clamping mechanism in the spraying chamber, wherein the base material corresponds to an ejection pipe orifice of a supersonic flame spraying machine;
s9, carrying the ITO powder to impact the substrate by the high-pressure mixed gas sprayed by the supersonic flame spraying machine, and depositing the ITO powder on the surface of the substrate through large plastic flow deformation to form a coating;
and S10, spraying for 5-6 times, and thickening the coating layer by layer until the ITO target is obtained.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (7)
1. A method for molding low-resistivity ITO target powder is characterized by comprising the following steps: carrying ITO powder particles with high-pressure mixed gas of N2, H2 and air to generate supersonic double-phase flow through a supersonic flame spraying machine, impacting a substrate in a spraying chamber under a solid state, depositing the ITO powder on the surface of the substrate through large plastic flow deformation to form a coating, and thickening the coating layer by layer to obtain an ITO target;
the molding method comprises the following steps:
s1, N2, H2 and air are sequentially conveyed into the gas mixer according to the proportion, and the N2, the H2 and the air are fully mixed under the action of the gas mixer;
s2, conveying the mixed gas into a compressor for pressurization to enable the mixed gas to become high-pressure gas, and then conveying the pressurized mixed gas into a mixer;
s3, feeding the ITO powder taken out into a scattering machine, and scattering the ITO powder into particles thoroughly by a grinding wheel in the scattering machine;
s4, sending the scattered ITO powder into a dryer for drying to remove moisture;
s5, feeding the processed ITO powder into a mixer, wherein the high-pressure mixed gas carries the ITO powder into a supersonic flame spraying machine;
s6, generating supersonic double-phase flow by the mixed gas and the ITO powder entering the supersonic flame spraying machine under the action of the supersonic flame spraying machine, wherein an ejection pipe orifice of the supersonic flame spraying machine is positioned in the spraying chamber;
s7, conveying the hot-pressed base material into a spraying chamber, clamping the base material by a clamping mechanism in the spraying chamber, wherein the base material corresponds to an ejection pipe orifice of a supersonic flame spraying machine;
s8, carrying the ITO powder to impact the substrate by the high-pressure mixed gas sprayed by the supersonic flame spraying machine, and depositing the ITO powder on the surface of the substrate through large plastic flow deformation to form a coating;
and S9, spraying for 5-6 times, and thickening the coating layer by layer until the ITO target is obtained.
2. A method for molding low-resistivity ITO target powder is characterized by comprising the following steps: the apparatus comprises: gas mixer, compressor, breaker, dryer, mixer, supersonic flame spraying machine and hot press.
3. The method for forming a low resistivity ITO target powder of claim 1, wherein: n2, H2 and air are proportioned according to the ratio of 1:3:6, the proportioned N2, H2 and air are conveyed into a gas mixer to be mixed, and the mixed gas is pressurized by a compressor to form high-pressure mixed gas which is conveyed into the mixer.
4. The method for forming a low resistivity ITO target powder of claim 1, wherein: and (3) feeding the taken ITO powder into a scattering machine, scattering the ITO powder into particles thoroughly by a grinding wheel in the scattering machine, feeding the scattered ITO powder into a dryer, adjusting the temperature of the dryer to be between 40 and 50 ℃, drying for 10min, and finally feeding the ITO powder into a mixer.
5. The method for forming a low resistivity ITO target powder of claim 1, wherein: the base material for spraying the ITO powder passes through the hot press before being sprayed, and the density of the base material is improved through the hot press.
6. The method for forming a low resistivity ITO target powder of claim 1, wherein: the inside of the spray chamber is in a closed state.
7. The method for forming a low resistivity ITO target powder of claim 1, wherein: in the hot pressing step, the base material for spraying is firstly sent into a hot press, and the hot press carries out hot pressing treatment on the base material, so that the density of the base material is improved.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011477158.XA CN112695286A (en) | 2020-12-15 | 2020-12-15 | Method for forming low-resistivity ITO target material powder |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011477158.XA CN112695286A (en) | 2020-12-15 | 2020-12-15 | Method for forming low-resistivity ITO target material powder |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990050195A (en) * | 1997-12-16 | 1999-07-05 | 신현준 | Manufacturing method of ITIO vacuum deposition target |
| US20120055783A1 (en) * | 2009-04-10 | 2012-03-08 | Saint-Gobain Coating Solutions | Process for producing a target by thermal spraying |
| CN105540647A (en) * | 2015-12-24 | 2016-05-04 | 株洲冶炼集团股份有限公司 | ITO (indium tin oxide) powder for rotating target prepared by thermal spraying method as well as production method and application of ITO powder |
-
2020
- 2020-12-15 CN CN202011477158.XA patent/CN112695286A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990050195A (en) * | 1997-12-16 | 1999-07-05 | 신현준 | Manufacturing method of ITIO vacuum deposition target |
| US20120055783A1 (en) * | 2009-04-10 | 2012-03-08 | Saint-Gobain Coating Solutions | Process for producing a target by thermal spraying |
| CN105540647A (en) * | 2015-12-24 | 2016-05-04 | 株洲冶炼集团股份有限公司 | ITO (indium tin oxide) powder for rotating target prepared by thermal spraying method as well as production method and application of ITO powder |
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