CN112694838A - Novel noble metal binder for bonding semiconductor elements - Google Patents
Novel noble metal binder for bonding semiconductor elements Download PDFInfo
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- CN112694838A CN112694838A CN202011527157.1A CN202011527157A CN112694838A CN 112694838 A CN112694838 A CN 112694838A CN 202011527157 A CN202011527157 A CN 202011527157A CN 112694838 A CN112694838 A CN 112694838A
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- salt
- noble metal
- metal binder
- pentanediol
- binder
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J1/00—Adhesives based on inorganic constituents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Powder Metallurgy (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
The invention discloses a novel noble metal binder for bonding semiconductor elements, belonging to the technical field of semiconductor electronics. The high-temperature-resistant ceramic powder is composed of a noble metal powder body and an organic solvent, wherein the volume content of the noble metal powder body is 26% -66%, and the balance is the organic solvent. The noble metal binder of the present invention does not contain various resins that may contaminate the joining member, so that the generation of voids can be suppressed because the organic component is uniformly exerted when heating and bonding. In the using process, the coating can be uniformly coated on the joint part, the coating can be well wetted with a structural member, the noble metal powder is uniformly dispersed in a solvent, the joint part of the semiconductor electronic member is prevented from being polluted, and the sintering state of the noble metal is good after the joint part is heated.
Description
Technical Field
The invention belongs to the technical field of semiconductor electronics, and particularly relates to a novel noble metal binder for bonding a semiconductor element.
Background
Solder materials are widely used for connecting members of semiconductor elements. In particular, gold-tin series soldering materials without assistants are widely used. In the process of soldering each member using the soldering material, the solder needs to be heated to a temperature higher than the melting point of the soldering material. Thermal stresses due to temperature changes during soldering can cause changes in the electrical characteristics of the components of the semiconductor element. Therefore, the welding material can be replaced by the material for constructing the combination by heating at low temperature as far as possible in the process of connecting the components.
In patent document 1, it is disclosed that a bonding material containing silver powder and epoxy resin can normally connect members at 100-. Patent document 2 discloses a binder containing gold powder and an organic solvent, which has a predetermined purity and a predetermined particle diameter.
However, the adhesive containing an epoxy resin in patent document 1 cannot completely decompose the resin at the time of bonding, and the resin remains in members of the semiconductor wafer, thereby contaminating the wafer and affecting the semiconductor performance. The binder disclosed in patent document 2 has a problem that the precious metal particles are agglomerated, and the organic substances are oozed out or volatilized, thereby causing voids during sintering.
Disclosure of Invention
Aiming at the problems, the invention provides a novel noble metal adhesive for bonding a semiconductor element, which consists of a noble metal powder body and an organic solvent, wherein the volume content of the noble metal powder body is 26-66%, and the balance is the organic solvent.
The noble metal binder also comprises a surfactant, and the content of the surfactant is 0.05-1 wt%.
The noble metal powder is gold powder and/or silver powder, the purity is more than 99.9 wt%, and the average grain diameter is 100nm-500 nm.
The organic solvent comprises chain saturated aliphatic 2-valent alcohols or monoterpene alcohols.
The organic solvent has 5-20 carbon atoms and a boiling point of 250-300 ℃.
The chain saturated aliphatic 2-valent alcohols include: one or more of propylene glycol, 1, 2-butanediol, 1, 3-butanediol, 1, 2-pentanediol, 1, 3-pentanediol, 1, 4-pentanediol, 1, 5-pentanediol, 2, 3-pentanediol, 2, 4-pentanediol, 1, 2-hexanediol, 1, 3-hexanediol, 1, 4-hexanediol, 1, 5-hexanediol, 1, 6-hexanediol, or derivatives thereof; further, 2, 4-diethyl-1, 5-pentanediol;
the monoterpene alcohol is monocyclic monoterpene alcohol and/or 2-cyclic monoterpene alcohol; further, comprising: citronellol, geraniol, nerol, menthol, terpineol, artemisinine, thujaplicin, pinocamphenol, beta-fenchyl alcohol, dimethyl octanol, and/or its derivatives; furthermore, the composition is a mixture of the cyclohexisocollic ester and the alpha-terpineol, and the mass ratio of the cyclohexisocollic ester to the alpha-terpineol is 1: 3.
the surfactant is a cationic surfactant.
The surfactant is quaternary ammonium salt, alkylamine salt or pyridinium salt;
further, the surfactant is alkylamine acetate with alkyl with 8-18 carbon atoms;
still further, the quaternary ammonium salts include dodecyltrimethylammonium salt, hexadecyltrimethylammonium salt, octadecyltrimethylammonium salt, dodecyldimethylammonium salt, octadecyldimethylethylammonium salt, dodecyldimethylbenzylammonium salt, hexadecyldimethylbenzylammonium salt, octadecyldimethylbenzylammonium salt, trimethylbenzylammonium salt, triethylbenzylammonium salt;
the alkylamine salts include octadecylamine salt, octadecylamide salt, N-alkylolefin diamine salt;
the pyridinium salt includes cetyl pyridinium salt and dodecyl pyridinium salt.
The volume content of the noble metal powder is 35-55%;
the noble metal binder has a thixotropic index of 6.0 to 20 at 23 ℃ at a shear rate of 40/s and 4/s, respectively.
The invention has the beneficial effects that:
1. the noble metal binder can be uniformly coated on the joint part in the using process, so that the pollution of the joint part of the semiconductor electronic component is avoided, and the sintering state of the noble metal is good after the joint part is heated.
2. The noble metal binder of the present invention does not contain various resins that may contaminate the joining member, so that the generation of voids can be suppressed because the organic component is uniformly exerted when heating and bonding.
3. The noble metal binder of the invention has good wetting with the structural member and the noble metal powder is dispersed evenly in the solvent.
Mode for carrying out the invention
The present invention is further illustrated in detail by the following specific examples:
examples
A novel noble metal adhesive for bonding semiconductor elements comprises a noble metal powder body and an organic solvent, wherein the volume content of the noble metal powder body is 26-66%, and the balance is the organic solvent. The content of the noble metal powder in the binder is that the thixotropic index value of the binder is more than 6.0. At the same time, the sintered body after joining is also easily brought into a dense state, and joining with high density is realized. When the metal powder content is less than 26% by volume, the binding property is low and the binder is also difficult to knead. On the other hand, if it exceeds 66%, the noble metal powder tends to agglomerate. The noble metal is more preferably present in an amount of 35 to 55% by volume.
The noble metal binder also comprises a surfactant, and the weight percentage of the surfactant is 0.05-1%. 0.05-1 wt% of surfactant can be added into the noble metal binder formed by noble metal powder and organic solvent. When the surfactant is contained, the noble metal powder is easily kept in a uniformly diffused state in the noble metal paste. If the surfactant is less than 0.05 wt%, the effect of suppressing agglomeration of the noble metal powder is poor, and if it exceeds 1 wt%, the surfactant remains in the joined members. In addition, the high molecular surfactant requires a high temperature for decomposition, and is therefore not suitable for the present invention.
The noble metal powder is gold powder and/or silver powder, the purity is more than 99.9 wt%, and the average grain diameter is 100nm-500 nm. In consideration of electrical and thermal conductivity, gold powder is used as the noble metal powder.
The purity of the noble metal powder is required to be as high as 99.9 wt% or more, and if the purity is low, the sintering process of the gold particles becomes unstable, and the bonding strength is low, or the member becomes hard after bonding and is liable to crack due to thermal shock or the like. In addition, the noble metal powder has an average particle diameter of more than 0.5. mu.m, and is difficult to disperse in the binder, and the noble metal powder is liable to settle. Meanwhile, after sintering the noble metal powder with larger grain diameter, better combination state appears among grains. On the other hand, if the average particle diameter is less than 0.1. mu.m, the noble metal powder may agglomerate.
The organic solvent includes chain saturated aliphatic 2-valent alcohols or monoterpene alcohols.
The organic solvent has a carbon number of 5-20 and a boiling point of 250-300 ℃. If the boiling point of the organic solvent is lower than 200 ℃, the evaporation rate of the organic solvent is high and the distribution control of the noble metal particles is difficult during the combined heating. If the organic solvent evaporates at normal temperature, the operation of applying the binder becomes difficult. If the boiling point of the organic solvent exceeds 350 ℃, the organic solvent remains on the bonding member, causing contamination of the semiconductor element. If more than two organic solvents are contained, all the organic solvents should be contained within the range of 200-350 ℃.
Chain saturated aliphatic 2-valent alcohols include: one or more of propylene glycol, 1, 2-butanediol, 1, 3-butanediol, 1, 2-pentanediol, 1, 3-pentanediol, 1, 4-pentanediol, 1, 5-pentanediol, 2, 3-pentanediol, 2, 4-pentanediol, 1, 2-hexanediol, 1, 3-hexanediol, 1, 4-hexanediol, 1, 5-hexanediol, 1, 6-hexanediol, or derivatives thereof; further, 2, 4-diethyl-1, 5-pentanediol;
the monoterpene alcohol is monocyclic monoterpene alcohol and/or 2-cyclic monoterpene alcohol; further, comprising: citronellol, geraniol, nerol, menthol, terpineol, artemisinine, thujaplicin, pinocamphenol, beta-fenchyl alcohol, dimethyl octanol, and/or its derivatives; furthermore, the composition is a mixture of the cyclohexisocollic ester and the alpha-terpineol, and the mass ratio of the cyclohexisocollic ester to the alpha-terpineol is 1: 3.
the surfactant is a cationic surfactant.
The surfactant is quaternary ammonium salt, alkylamine salt or pyridinium salt;
further, the surfactant is alkylamine acetate having an alkyl group with 8 to 18 carbon atoms.
Still further, the quaternary ammonium salts include dodecyltrimethylammonium salt, hexadecyltrimethylammonium salt, octadecyltrimethylammonium salt, dodecyldimethylammonium salt, octadecyldimethylethylammonium salt, dodecyldimethylbenzylammonium salt, hexadecyldimethylbenzylammonium salt, octadecyldimethylbenzylammonium salt, trimethylbenzylammonium salt, triethylbenzylammonium salt;
the alkylamine salts include octadecylamine salt, octadecylamide salt, N-alkylenediamine salt;
the pyridinium salt includes cetyl pyridinium salt and dodecyl pyridinium salt.
The noble metal binder has a thixotropic index of 6.0 to 20 at 23 ℃ at a shear rate of 40/s and 4/s, respectively. The viscosity is lower as the shear rate applied to the binder is greater when measured. The thixotropic index is the ratio of the viscosities measured at two different shear rates. The thixotropic index indicates the change in viscosity for different shear rates and is an index showing how high or low the thixotropy is. In the present invention, the thixotropic index of the noble metal binder is 6.0 or more. Therefore, when the binder is applied, not only the formability of the binder but also the uniformity of the binder during heat sintering can be ensured, thereby ensuring the compactness of the sintered body. Therefore, the noble metal binder disclosed by the invention is particularly suitable for large-area coating and bonding. If the thixotropic index is less than 6.0, the noble metal adhesive may bleed out when applied to the joining member. The upper limit of the thixotropic index is 20. If the thixotropic index exceeds 20, the kneading before the application of the binder becomes difficult to handle.
Claims (10)
1. A novel noble metal adhesive for bonding a semiconductor element is characterized by comprising a noble metal powder body and an organic solvent, wherein the volume content of the noble metal powder body is 26-66%, and the balance is the organic solvent.
2. The precious metal binder of claim 1 further comprising a surfactant in an amount of 0.05 to 1 wt%.
3. The noble metal binder according to claim 1, wherein the noble metal powder is gold powder and/or silver powder, has a purity of 99.9 wt% or more, and has an average particle diameter of 100nm to 500 nm.
4. The precious metal binder of claim 1 wherein said organic solvent comprises catenary saturated aliphatic 2-valent alcohols or monoterpene alcohols.
5. The noble metal binder as set forth in claim 4, wherein the organic solvent has a carbon number of 5 to 20 and a boiling point of 250-300 ℃.
6. The precious metal binder of claim 4 or 5, wherein the catenary saturated aliphatic 2-valent alcohols comprise: one or more of propylene glycol, 1, 2-butanediol, 1, 3-butanediol, 1, 2-pentanediol, 1, 3-pentanediol, 1, 4-pentanediol, 1, 5-pentanediol, 2, 3-pentanediol, 2, 4-pentanediol, 1, 2-hexanediol, 1, 3-hexanediol, 1, 4-hexanediol, 1, 5-hexanediol, 1, 6-hexanediol, or derivatives thereof; further, 2, 4-diethyl-1, 5-pentanediol;
the monoterpene alcohol is monocyclic monoterpene alcohol and/or 2-cyclic monoterpene alcohol; further, comprising: citronellol, geraniol, nerol, menthol, terpineol, artemisinine, thujaplicin, pinocamphenol, beta-fenchyl alcohol, dimethyl octanol, and/or its derivatives; furthermore, the composition is a mixture of the cyclohexisocollic ester and the alpha-terpineol, and the mass ratio of the cyclohexisocollic ester to the alpha-terpineol is 1: 3.
7. the precious metal binder of claim 1 wherein the surfactant is a cationic surfactant.
8. The precious metal binder of claim 1 wherein the surfactant is a quaternary ammonium salt, an alkylamine salt, or a pyridinium salt;
further, the surfactant is alkylamine acetate with alkyl with 8-18 carbon atoms;
still further, the quaternary ammonium salts include dodecyltrimethylammonium salt, hexadecyltrimethylammonium salt, octadecyltrimethylammonium salt, dodecyldimethylammonium salt, octadecyldimethylethylammonium salt, dodecyldimethylbenzylammonium salt, hexadecyldimethylbenzylammonium salt, octadecyldimethylbenzylammonium salt, trimethylbenzylammonium salt, triethylbenzylammonium salt;
the alkylamine salts include octadecylamine salt, octadecylamide salt, N-alkylolefin diamine salt;
the pyridinium salt includes cetyl pyridinium salt and dodecyl pyridinium salt.
9. The noble metal binder of claim 1 wherein the noble metal powder has a volume content of 35 to 55%.
10. The precious metal binder of claim 1 wherein said precious metal binder has a thixotropic index of 6.0 to 20 at 23 ℃ at a shear rate of 40/s and 4/s, respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011527157.1A CN112694838A (en) | 2020-12-22 | 2020-12-22 | Novel noble metal binder for bonding semiconductor elements |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011527157.1A CN112694838A (en) | 2020-12-22 | 2020-12-22 | Novel noble metal binder for bonding semiconductor elements |
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| Publication Number | Publication Date |
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| CN112694838A true CN112694838A (en) | 2021-04-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202011527157.1A Pending CN112694838A (en) | 2020-12-22 | 2020-12-22 | Novel noble metal binder for bonding semiconductor elements |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102812520A (en) * | 2010-03-18 | 2012-12-05 | 古河电气工业株式会社 | Electrically conductive paste, and electrically conductive connection member produced using the paste |
| CN103155126A (en) * | 2010-10-08 | 2013-06-12 | 田中贵金属工业株式会社 | Noble metal paste for bonding of semiconductor element |
| US20130216847A1 (en) * | 2010-10-20 | 2013-08-22 | Robert Bosch Gmbh | Starting material for a sintered bond and process for producing the sintered bond |
-
2020
- 2020-12-22 CN CN202011527157.1A patent/CN112694838A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102812520A (en) * | 2010-03-18 | 2012-12-05 | 古河电气工业株式会社 | Electrically conductive paste, and electrically conductive connection member produced using the paste |
| CN103155126A (en) * | 2010-10-08 | 2013-06-12 | 田中贵金属工业株式会社 | Noble metal paste for bonding of semiconductor element |
| JPWO2012046641A1 (en) * | 2010-10-08 | 2014-02-24 | 田中貴金属工業株式会社 | Precious metal paste for semiconductor element bonding |
| US20130216847A1 (en) * | 2010-10-20 | 2013-08-22 | Robert Bosch Gmbh | Starting material for a sintered bond and process for producing the sintered bond |
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Application publication date: 20210423 |