CN112689903A - Method for manufacturing light emitting element and display device including light emitting element - Google Patents

Method for manufacturing light emitting element and display device including light emitting element Download PDF

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Publication number
CN112689903A
CN112689903A CN201980060103.8A CN201980060103A CN112689903A CN 112689903 A CN112689903 A CN 112689903A CN 201980060103 A CN201980060103 A CN 201980060103A CN 112689903 A CN112689903 A CN 112689903A
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Prior art keywords
light emitting
emitting element
electrode
layer
light
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Inventor
李昇我
金东旭
赵显敏
金大贤
闵正泓
李东彦
车炯来
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/58—Optical field-shaping elements
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    • H01L2933/0025—Processes relating to coatings
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    • H01L33/0093—Wafer bonding; Removal of the growth substrate
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract

A method for manufacturing a light emitting element and a display device including the light emitting element are provided. The method for manufacturing a light emitting element includes the steps of: providing a semiconductor structure formed on a substrate; defining a wavelength region on the semiconductor structure by measuring light having different wavelengths emitted from the semiconductor structure; and forming nano-patterns having different diameters and spaced apart from each other on the semiconductor structure according to the wavelength region, and etching the semiconductor structure to form the element bar.

Description

Method for manufacturing light emitting element and display device including light emitting element
Technical Field
The present invention relates to a method of manufacturing a light emitting element and a display device including the light emitting element, and more particularly, to a method of manufacturing a light emitting element in which a deviation of an emission wavelength formed according to a difference in composition of a fluorescent material is compensated and a display device including the light emitting element.
Background
The importance of display devices has increased with the development of multimedia. Accordingly, various types of display devices such as organic light emitting displays and Liquid Crystal Displays (LCDs) have been used.
The display device is a device for displaying an image, and includes a display panel such as a light-emitting display panel or a liquid crystal panel. Among them, the light emitting display panel may include light emitting elements such as Light Emitting Diodes (LEDs). The Light Emitting Diode (LED) may include an Organic Light Emitting Diode (OLED) using an organic material as a fluorescent material and an inorganic light emitting diode using an inorganic material as a fluorescent material.
In the case of an Organic Light Emitting Diode (OLED), since the organic light emitting diode uses an organic material as a fluorescent material, there is an advantage in that: the manufacturing process of the organic light emitting diode is simple, and the organic light emitting diode has flexible characteristics. However, it is known that organic materials are susceptible to high temperature driving environments and have relatively low blue light efficiency.
On the other hand, in the case of an inorganic light emitting diode, since the inorganic light emitting diode uses an inorganic semiconductor as a fluorescent material, there is an advantage in that: the inorganic light emitting diode has durability even in a high temperature environment, and has higher blue light efficiency than the organic light emitting diode. In addition, even in the manufacturing process that has been pointed out as a limitation of the conventional inorganic light emitting diode, a transfer method using Dielectrophoresis (DEP) has been developed. Accordingly, research into inorganic light emitting diodes having higher durability and efficiency as compared to organic light emitting diodes is continuously being conducted.
Disclosure of Invention
Technical problem
The inorganic light emitting diode can be manufactured by a method of: a semiconductor layer doped with an n-type dopant or a p-type dopant and an inorganic fluorescent material layer are grown on a substrate to form rods each having a specific shape, and then the rods are separated. However, when the inorganic fluorescent material layer is grown on a substrate (e.g., a wafer substrate), a difference in composition of the fluorescent material occurs according to a spatial position on the wafer substrate. Therefore, there is a problem in that a variation in emission wavelength occurs between rods grown on the wafer substrate.
The subject matter to be achieved by the present invention is to provide a method of manufacturing a light emitting element in which a deviation of an emission wavelength of a rod that is formed non-uniformly is reduced by controlling a diameter of the rod grown on a wafer substrate at the time of manufacturing the light emitting element, and to provide a display device including the light emitting element.
Additional advantages, subject matter, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention.
Technical scheme
According to an exemplary embodiment of the present disclosure, there is provided a method of manufacturing a light emitting element, the method including: providing a semiconductor structure formed on a substrate; measuring light having wavelength bands different from each other emitted from the semiconductor structure to define a wavelength region; and forming nano-patterns having different diameters from each other and spaced apart from each other on the semiconductor structure, and etching the semiconductor structure to form the element bar.
The wavelength region may include: a first wavelength region from which first light having a first wavelength band is emitted; a second wavelength region from which second light having a second wavelength band shorter than the first wavelength band is emitted; and a third wavelength region from which third light having a third wavelength band shorter than the second wavelength band is emitted.
In the step of forming the nano-pattern, as a wavelength band of light emitted from the wavelength region decreases, the nano-pattern having an increased diameter may be formed on the wavelength region.
The nano-pattern may include a first nano-pattern, a second nano-pattern having a diameter greater than that of the first nano-pattern, and a third nano-pattern having a diameter greater than that of the second nano-pattern, the first nano-pattern may be formed on the first wavelength region, the second nano-pattern may be formed on the second wavelength region, and the third nano-pattern may be formed on the third wavelength region.
The element rod may include: a first element rod formed in a region overlapping the first wavelength region; a second element rod formed in a region overlapping the second wavelength region; and a third element rod formed in a region overlapping the third wavelength region.
The second element rod may be larger in diameter than the first element rod but smaller in diameter than the third element rod, and the first, second, and third element rods may emit light of substantially the same wavelength band.
The third wavelength region may be disposed at a center of the semiconductor structure, the second wavelength region may be disposed to surround an outer surface of the third wavelength region, and the first wavelength region may be disposed to surround an outer surface of the second wavelength region.
The semiconductor structure may include a first axis passing through a center of the semiconductor structure, a diameter of the nanopattern may increase from one end of the first axis toward the center of the semiconductor structure, and a diameter of the nanopattern may decrease from the center of the semiconductor structure toward the other end of the first axis.
The semiconductor structure may include a second axis passing through a center of the semiconductor structure, the first wavelength region may be disposed at one end of the second axis, the second wavelength region may partially surround an outer surface of the first wavelength region and extend in a direction of the other end of the second axis, and the third wavelength region may partially surround an outer surface of the second wavelength region and extend to the other end of the second axis.
The at least one nanopattern disposed along the second axis may increase in diameter from one end of the second axis toward the other end of the second axis.
According to an exemplary embodiment of the present disclosure, there is provided a method of manufacturing a light emitting element, the method including: providing a substrate and a semiconductor structure, wherein the semiconductor structure is arranged on the substrate and comprises a first conductive semiconductor layer, an active material layer and a second conductive semiconductor layer; forming an etching mask layer formed on the semiconductor structure and an etching pattern layer including one or more nano-patterns formed on the etching mask layer, having different diameters from each other, and spaced apart from each other; etching the semiconductor structure in a direction perpendicular to the substrate along regions where the nano-patterns are spaced apart from each other to form element bars; and separating the element bar from the substrate to form a light emitting element.
The nanopattern may include: a first nanopattern; a second nano pattern having a diameter larger than that of the first nano pattern; and a third nano pattern having a diameter larger than that of the second nano pattern.
The light emitting element may include: a first light emitting element having a diameter equal to that of the first nano pattern; a second light emitting element having a diameter equal to that of the second nano pattern; and a third light emitting element having a diameter equal to that of the third nano pattern.
The difference in diameter between the first light emitting element and the second light emitting element may be in the range of 2% to 16% of the diameter of the second light emitting element.
A pitch between the one or more nano-patterns spaced apart from each other may be in a range of 2.5 to 3.5 times a diameter of each of the nano-patterns.
The nanopattern may have a circular shape or a polygonal shape.
A separation layer may be further provided between the substrate and the first conductive semiconductor layer, and the step of forming the light-emitting element may include a step of removing the separation layer to separate the element bar from the substrate.
According to an exemplary embodiment of the present disclosure, a display device includes: a substrate; at least one first electrode and at least one second electrode extending in a first direction on the substrate and spaced apart from each other in a second direction different from the first direction; at least one light emitting element disposed in a space between the first electrode and the second electrode; a first contact electrode partially covering the first electrode and contacting a first end of the light emitting element; and a second contact electrode partially covering the second electrode and contacting a second end of the light emitting element, the second end of the light emitting element being positioned opposite to the first end of the light emitting element, wherein the light emitting element includes a first light emitting element and a second light emitting element, the second light emitting element having a diameter larger than that of the first light emitting element, the first light emitting element and the second light emitting element emitting light of substantially the same wavelength band.
The difference in diameter between the first light emitting element and the second light emitting element may be in the range of 2% to 16% of the diameter of the second light emitting element.
The light emitting elements may further include a third light emitting element, which may have a diameter larger than that of the second light emitting element and emit light of substantially the same wavelength band as the second light emitting element.
The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.
Advantageous effects
According to the method of manufacturing a light emitting element according to the embodiment, the nano patterns formed on the semiconductor structure have different diameters so that the wavelength band of light emitted from the element rod can be shifted. Thus, the plurality of light emitting elements may have different diameters, but may emit light of substantially the same wavelength band.
Further, a display device including the above light emitting element and minimizing a deviation of an emission wavelength emitted from each pixel can be provided.
The effects of the present invention are not limited to the above effects, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.
Drawings
Fig. 1 is a plan view of a display device according to an embodiment.
Fig. 2 is a sectional view taken along line I-I ', line II-II ', and line III-III ' of fig. 1.
Fig. 3 is a schematic perspective view of a light emitting element according to an embodiment.
Fig. 4 is a sectional view taken along line IV-IV' of fig. 1.
Fig. 5 and 6 are cross-sectional views schematically illustrating a method of forming a semiconductor structure according to an embodiment.
Fig. 7 is a flowchart showing a step of forming an element bar in a method of manufacturing a light emitting element according to the embodiment.
Fig. 8 to 16 are sectional views schematically illustrating a method of manufacturing a light emitting element according to an embodiment.
Fig. 17 to 19 are plan views schematically illustrating nano patterns according to another embodiment.
Fig. 20 and 21 are sectional views illustrating some processes of a method of manufacturing a light emitting element according to another embodiment.
Detailed Description
The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. This invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
It will also be understood that when a layer is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Like reference numerals refer to like elements throughout the specification.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element discussed below could be termed a second element without departing from the teachings of the present invention. Similarly, a second element may be termed a first element.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Fig. 1 is a plan view of a display device according to an embodiment.
The display device 10 may include at least one region defined as pixels PX. A plurality of pixels PX may be arranged in the display unit of the display device 10 to emit light of a specific wavelength band to the outside of the display device 10. Although fig. 1 shows three pixels PX1, PX2, and PX3, it is apparent that the display device 10 includes a larger number of pixels. Although the drawing shows that the plurality of pixels PX are arranged in only one direction (e.g., in the first direction D1), the plurality of pixels PX may be arranged in the second direction D2 intersecting the first direction D1. Further, the pixel PX shown in fig. 1 may be divided into a plurality of pixels to allow each of the plurality of pixels to constitute one pixel PX. The pixels may be arranged in a vertical direction (or the second direction D2) or may be arranged in a zigzag form, instead of being arranged in parallel only in the first direction D1 as shown in fig. 1.
Although not shown in the drawings, the display device 10 may include a light-emitting region in which the light-emitting elements 300 are arranged to emit light of a specific color, and a non-light-emitting region defined as a region other than the light-emitting region. The non-light emitting region may be covered with a specific member, not viewed from the outside. The non-light emitting region may be provided with various means for driving the light emitting elements 300 arranged in the light emitting region. For example, the non-light emitting region may be provided with a wiring, a circuit unit, a driving unit, or the like for applying an electric signal to the light emitting region. However, the present invention is not limited thereto.
Each of the plurality of pixels may include at least one light emitting element 300 emitting light of a specific wavelength band to display a color. Light emitted from the light emitting element 300 can be viewed from the outside of the display device 10. In the embodiment, the light emitting elements 300 emitting light of colors different from each other may be provided for each of the pixels PX representing colors different from each other. For example, the first pixel PX1 representing red may include a light emitting element 300 emitting red light, the second pixel PX2 representing green may include a light emitting element 300 emitting green light, and the third pixel PX3 representing blue may include a light emitting element 300 emitting blue light. However, the present invention is not limited thereto, and in some cases, the pixels PX representing colors different from each other may include light emitting elements 300 emitting light of the same color (e.g., blue), and the colors of the respective pixels PX may be represented by disposing a wavelength conversion layer or a color filter on a light emitting path. However, the present invention is not limited thereto, and in some cases, adjacent pixels PX may emit light of the same color.
Referring to fig. 1, the display device 10 may include a plurality of electrodes 210 and 220 and a plurality of light emitting elements 300. At least a portion of each of the electrodes 210 and 220 may be disposed in each pixel PX, electrically connected to the light emitting element 300, and apply an electrical signal to the light emitting element 300 to allow the light emitting element 300 to emit light of a specific color.
In addition, at least a portion of each of the electrodes 210 and 220 may be used to form an electric field in the pixel PX to align the light emitting element 300. Specifically, when the light emitting elements 300 emitting lights of colors different from each other are aligned in the plurality of pixels PX, the light emitting elements 300 need to be accurately aligned for each pixel PX. When the light emitting elements 300 are aligned using dielectrophoresis, a solution containing the light emitting elements 300 is applied to the display device 10, AC power is applied to the solution to form a capacitance caused by an electric field, and thus the light emitting elements 300 can be aligned by the dielectrophoresis force.
The plurality of electrodes 210 and 220 may include a first electrode 210 and a second electrode 220. In an exemplary embodiment, the first electrode 210 may be a pixel electrode separated for each pixel PX, and the second electrode 220 may be a common electrode commonly connected along the plurality of pixels PX. Any one of the first electrode 210 and the second electrode 220 may be an anode electrode of the light emitting element 300, and the other one of the first electrode 210 and the second electrode 220 may be a cathode electrode of the light emitting element 300. However, the present invention is not limited to this case, and may have the opposite case.
The first and second electrodes 210 and 220 may include electrode stem portions 210S and 220S and electrode branch portions 210B and 220B, the electrode stem portions 210S and 220S extending in a first direction D1, the electrode branch portions 210B and 220B extending in a second direction D2 intersecting the first direction D1 and branching from the electrode stem portions 210S and 220S, respectively.
Specifically, the first electrode 210 may include a first electrode stem portion 210S and at least one first electrode branch portion 210B, the first electrode stem portion 210S extending along the first direction D1, the at least one first electrode branch portion 210B branching from the first electrode stem portion 210S and extending along the second direction D2. Although not shown in the drawings, one end of the first electrode trunk portion 210S may be connected to a signal application pad (or referred to as a "pad"), and the other end thereof may extend in the first direction D1 but be electrically separated between the pixels PX. The signal application pad may be connected to a display device or an external power source to apply an electrical signal to the first electrode stem portion 210S or to apply AC power to the first electrode stem portion 210S when aligning the light emitting element 300.
The first electrode stem portion 210S of any one pixel is placed on substantially the same line as the first electrode stem portions 210S of adjacent pixels belonging to the same row (e.g., adjacent in the first direction D1). In other words, the first electrode stem portion 210S of one pixel ends between the pixels PX, and both ends thereof are spaced apart from each other, and the first electrode stem portion 210S of an adjacent pixel may be aligned with an extension line of the first electrode stem portion 210S of the one pixel. Such an arrangement of the first electrode stem portion 210S may be performed by a method of: one trunk electrode is formed during the manufacturing process, a process of aligning the light emitting element 300 is performed, and then the trunk electrode is disconnected using a laser. Accordingly, the first electrode trunk part 210S provided in each pixel PX may apply electrical signals different from each other to the corresponding pixels PX, which may be driven independently of each other.
The first electrode branch portion 210B may branch from at least a portion of the first electrode stem portion 210S and extend in the second direction D2, but may terminate and be spaced apart from the second electrode stem portion 220S disposed to face the first electrode stem portion 210S. That is, one end of the first electrode branch portion 210B may be connected to the first electrode trunk portion 210S, and the other end thereof may be disposed in the pixel PX while being spaced apart from the second electrode trunk portion 220S. Since the first electrode branch portions 210B are connected to the first electrode trunk portion 210S electrically separated for each pixel PX, the first electrode branch portions 210B may receive electrical signals different from each other for each pixel PX.
Further, one or more first electrode branch portions 210B may be provided for each pixel PX. Although it is illustrated in fig. 1 that two first electrode branch portions 210B are provided and a second electrode branch portion 220B is provided between the two first electrode branch portions 210B, the present invention is not limited thereto and a greater number of first electrode branch portions 210B may be provided. In this case, the first electrode branch portions 210B may be alternately spaced apart from the plurality of second electrode branch portions 220B, and the plurality of light emitting elements 300 may be disposed between the first electrode branch portions 210B and the plurality of second electrode branch portions 220B. In some embodiments, the second electrode branch portions 220B are disposed between the first electrode branch portions 210B, so that each pixel PX may have a symmetrical structure with respect to the second electrode branch portions 220B. However, the present invention is not limited thereto.
The second electrode 220 may include a second electrode stem portion 220S extending in the first direction D1, spaced apart from the first electrode stem portion 210S and facing the first electrode stem portion 210S, and at least one second electrode branch portion 220B branched from the second electrode stem portion 220S, extending in the second direction D2, spaced apart from the first electrode branch portion 210B and facing the first electrode branch portion 210B. Similar to the first electrode stem portion 210S, one end of the second electrode stem portion 220S may also be connected to a signal application pad. However, the other end of the second electrode trunk part 220S may extend to a plurality of pixels PX adjacent in the first direction D1. That is, the second electrode trunk part 220S may be electrically connected between the pixels PX. Accordingly, both ends of the second electrode trunk part 220S of any one pixel may be connected to one end of the second electrode trunk part 220S of the adjacent pixel PX between the respective pixels PX, so that the same electrical signal may be applied to the respective pixels PX.
The second electrode branch portion 220B may branch from at least a portion of the second electrode stem portion 220S and extend along the second direction D2, but may terminate and be spaced apart from the first electrode stem portion 210S. That is, one end of the second electrode branch portion 220B may be connected to the second electrode stem portion 220S, and the other end thereof may be disposed in the pixel PX while being spaced apart from the first electrode stem portion 210S. Since the second electrode branch part 220B is connected to the second electrode trunk part 220S electrically connected for each pixel PX, the second electrode branch part 220B may receive the same electrical signal for each pixel PX.
Further, the second electrode branch portion 220B may be disposed to be spaced apart from the first electrode branch portion 210B and to face the first electrode branch portion 210B. Here, since the first and second electrode trunk parts 210S and 220S are spaced apart from each other and face each other in opposite directions with respect to the center of each pixel PX, the first and second electrode branch parts 210B and 220B may extend in opposite directions to each other. In other words, the first electrode branch portion 210B extends in one of the second directions D2, and the second electrode branch portion 220B extends in the other of the second directions D2, so that one ends of the respective branch portions may be disposed in opposite directions to each other with respect to the center of the pixel PX. However, the present invention is not limited thereto, and the first electrode stem portion 210S and the second electrode stem portion 220S may be disposed to be spaced apart from each other in the same direction with respect to the center of the pixel PX. In this case, the first and second electrode branch portions 210B and 220B branched from the first and second electrode stem portions 210S and 220S, respectively, may extend in the same direction.
Although it is illustrated in fig. 1 that one second electrode branch portion 220B is provided in each pixel PX, the present invention is not limited thereto, and a greater number of second electrode branch portions 220B may be provided.
The plurality of light emitting elements 300 may be disposed between the first electrode branch portion 210B and the second electrode branch portion 220B. One end of at least some of the plurality of light emitting elements 300 may be electrically connected to the first electrode branch portion 210B, and the other end thereof may be electrically connected to the second electrode branch portion 220B.
The plurality of light emitting elements 300 may be spaced apart from each other along the second direction D2 and may be aligned substantially parallel to each other. The interval between the light emitting elements 300 is not particularly limited. In some cases, the plurality of light emitting elements 300 are arranged adjacent to each other to form a group, the plurality of light emitting elements 300 may form a group in a state of being spaced apart at a predetermined interval, and the plurality of light emitting elements 300 may have a non-uniform density and may be oriented and aligned in one direction.
In addition, the plurality of light emitting elements 300 may include light emitting elements having diameters different from each other, for example, a first light emitting element 301, a second light emitting element 302, and a third light emitting element 303.
As will be described later, the light emitting element 300 can emit light of different wavelength bands depending on the composition of the element active layer 330 and the kind of active material. When the light emitting device 300 is manufactured, the device active layer 330 grown on the same wafer substrate may have a difference in composition according to a spatial position and may have a deviation in a wavelength band of a part of emitted light.
For example, when the second light emitting element 302 having an arbitrary diameter emits the second light L2 having the second wavelength band, other light emitting elements grown on the same wafer substrate may have a difference in composition of the element active layer 330 according to a spatial position of the wafer substrate. Therefore, when another light emitting element has the same diameter as that of the second light emitting element 302, light of different wavelength bands, for example, the first light L1 of the first wavelength band longer than the second wavelength band or the third light L3 of the third wavelength band shorter than the second wavelength band may be emitted according to the difference in composition of the element active layer 330. In other words, when the light emitting elements 300 grown on the same wafer substrate have the same diameter, a deviation of emission wavelength may occur due to a difference in composition of the element active layer 330.
In order to minimize the deviation of emission wavelengths between the light emitting elements 300, in the method of manufacturing the light emitting elements 300 according to the embodiment, the etching pattern layers 1700 (shown in fig. 8) having different diameters may be formed so as to form the element RODs ROD (ROD) having different diameters from each other according to the difference of the composition of the element active layer 330 (shown in fig. 12), and the display device 10 according to the embodiment may include the light emitting elements 300 having different diameters from each other and emitting light of substantially the same wavelength band. Details thereof will be described later.
The contact electrodes 260 may be disposed on the first and second electrode branch portions 210B and 220B, respectively.
The plurality of contact electrodes 260 may be arranged to extend in the second direction D2 and to be spaced apart from each other in the first direction D1. Each of the contact electrodes 260 may be in contact with at least one end of the light emitting element 300, and may be in contact with the first electrode 210 or the second electrode 220 to receive an electrical signal. Accordingly, the contact electrode 260 may transmit an electrical signal received from the first electrode 210 or the second electrode 220 to the light emitting element 300.
The contact electrode 260 may be disposed on the electrode branch portions 210B and 220B to partially cover the electrode branch portions 210B and 220B, and may include a first contact electrode 261 and a second contact electrode 262, each of the first contact electrode 261 and the second contact electrode 262 contacting one end or the other end of the light emitting element 300.
The first contact electrode 261 may be disposed on the first electrode branch portion 210B, and may be in contact with one end of the light emitting element 300 electrically connected to the first electrode 210. The second contact electrode 262 may be disposed on the second electrode branch portion 220B, and may be in contact with the other end of the light emitting element 300 electrically connected to the second electrode 220.
In some embodiments, both ends of the light emitting element 300 electrically connected to the first electrode branch portion 210B or the second electrode branch portion 220B may be a conductive semiconductor layer doped with n-type dopant or p-type dopant. When one end of the light emitting element 300 electrically connected to the first electrode branch portion 210B is a conductive semiconductor layer doped with a p-type dopant, the other end of the light emitting element 300 electrically connected to the second electrode branch portion 220B may be a conductive semiconductor layer doped with an n-type dopant. However, the present invention is not limited thereto.
The first and second contact electrodes 261 and 262 may be disposed on the first and second electrode branch portions 210B and 220B, respectively, to partially cover the first and second electrode branch portions 210B and 220B. As shown in fig. 1, the first and second contact electrodes 261 and 262 may be disposed to extend in the second direction D2, to be spaced apart from each other, and to face each other. However, one end of each of the first and second contact electrodes 261 and 262 may be terminated to partially expose one end of each of the electrode branch portions 210B and 220B. Further, the other end of each of the first and second contact electrodes 261 and 262 may be terminated in a state where they are spaced apart from each other so as not to overlap each of the electrode stem portions 210S and 220S. However, the present invention is not limited thereto, and the other end of each of the first and second contact electrodes 261 and 262 may cover each of the electrode branch portions 210B and 220B.
In addition, as shown in fig. 1, the first electrode stem portion 210S and the second electrode stem portion 220S may be electrically connected to a thin film transistor 120 or a power supply wiring 161, which will be described later, through contact holes (e.g., a first electrode contact hole CNTD and a second electrode contact hole CNTS), respectively. Although it is illustrated in fig. 1 that the contact holes on the first electrode stem portion 210S and the second electrode stem portion 220S are arranged for each pixel PX, the present invention is not limited thereto. As described above, since the second electrode stem portion 220S may extend to be electrically connected to the adjacent pixel PX, in some embodiments, the second electrode stem portion 220S may be electrically connected to the thin film transistor through one contact hole.
Hereinafter, a more specific structure of a plurality of members provided on the display device 10 will be described with reference to fig. 2.
Fig. 2 is a sectional view taken along line I-I ', line II-II ', and line III-III ' of fig. 1. Although fig. 2 shows only one pixel PX, it may be applied to other pixels. Fig. 2 shows a cross section across one end and the other end of any of the light emitting elements 300.
Referring to fig. 1 and 2, the display device 10 may include a substrate 110, thin film transistors 120 and 140 disposed on the substrate 110, and electrodes 210 and 220 and a light emitting element 300 disposed over the thin film transistors 120 and 140. The thin film transistor may include a first thin film transistor 120 and a second thin film transistor 140, and the first thin film transistor 120 and the second thin film transistor 140 may be a driving transistor and a switching transistor, respectively. Each of the thin film transistors 120 and 140 may include an active layer, a gate electrode, a source electrode, and a drain electrode. The first electrode 210 may be electrically connected to the drain electrode of the first thin film transistor 120.
More specifically, the substrate 110 may be an insulating substrate. The substrate 110 may be made of an insulating material such as glass, quartz, or polymer resin. Examples of the polymer resin may include Polyethersulfone (PES), Polyacrylate (PA), Polyarylate (PAR), Polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyallylate (polyallylate), Polyimide (PI), Polycarbonate (PC), cellulose triacetate (CAT), Cellulose Acetate Propionate (CAP), and combinations thereof. The substrate 110 may be a rigid substrate, or may be a flexible substrate that can be bent, folded, rolled, etc.
The buffer layer 115 may be disposed on the substrate 110. The buffer layer 115 may prevent diffusion of impurity ions, may prevent permeation of moisture or external air, and may perform a surface planarization function. Buffer layer 115 may include silicon nitride, silicon oxide, or silicon oxynitride.
The semiconductor layer is disposed on the buffer layer 115. The semiconductor layer may include the first active layer 126 of the first thin film transistor 120, the second active layer 146 of the second thin film transistor 140, and the auxiliary layer 163. The semiconductor layer may include polycrystalline silicon, single crystalline silicon, an oxide semiconductor, or the like.
The first gate insulating layer 170 is disposed on the semiconductor layer. The first gate insulating layer 170 covers the semiconductor layer. The first gate insulating layer 170 may function as a gate insulating film of the thin film transistor. The first gate insulating layer 170 may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, titanium oxide, or the like. These compounds may be used alone or in combination with each other.
The first conductive layer is disposed on the first gate insulating layer 170. The first conductive layer may include a first gate electrode disposed on the first active layer 126 of the first thin film transistor 120, a second gate electrode disposed on the second active layer 146 of the second thin film transistor 140, and a power supply wiring 161 disposed on the auxiliary layer 163, and the first gate insulating layer 170 is positioned between the first active layer 126 and the first gate electrode, between the second active layer 146 and the second gate electrode, and between the auxiliary layer 163 and the power supply wiring 161. The first conductive layer may include at least one metal selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu). The first conductive layer may be a single layer film or a multilayer film.
The second gate insulating layer 180 is disposed on the first conductive layer. The second gate insulating layer 180 may be an interlayer insulating film. The second gate insulating layer 180 may include an inorganic insulating material such as silicon oxide, silicon nitride, silicon oxynitride, hafnium oxide, aluminum oxide, titanium oxide, tantalum oxide, or zinc oxide.
The second conductive layer is disposed on the second gate insulating layer 180. The second conductive layer includes a capacitor electrode 128 disposed on the first gate electrode 121, and a second gate insulating layer 180 is between the first gate electrode 121 and the capacitor electrode 128. The capacitor electrode 128 may constitute a storage capacitor together with the first gate electrode 121.
Similar to the first conductive layer, the second conductive layer may include at least one metal selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu).
An interlayer insulating layer 190 is disposed on the second conductive layer. The interlayer insulating layer 190 may be an interlayer insulating film. In addition, the interlayer insulating layer 190 may perform a surface planarization function. The interlayer insulating layer 190 may include an organic insulating material such as polyacrylate resin, epoxy resin, phenol resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, or benzocyclobutene (BCB).
The third conductive layer is disposed on the interlayer insulating layer 190. The third conductive layer includes the first drain electrode 123 and the first source electrode 124 of the first thin film transistor 120, the second drain electrode 143 and the second source electrode 144 of the second thin film transistor 140, and the power supply electrode 162 disposed on the power supply wiring 161.
Each of the first source electrode 124 and the first drain electrode 123 may be electrically connected to the first active layer 126 through a first contact hole 129 penetrating the interlayer insulating layer 190 and the second gate insulating layer 180. Each of the second source electrode 144 and the second drain electrode 143 may be electrically connected to the second active layer 146 through a second contact hole 149 penetrating the interlayer insulating layer 190 and the second gate insulating layer 180. The power supply electrode 162 may be electrically connected to the power supply wiring 161 through a third contact hole 169 penetrating the interlayer insulating layer 190 and the second gate insulating layer 180.
The third conductive layer may include at least one metal selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu). The third conductive layer may be a single layer film or a multilayer film. For example, the third conductive layer may be formed of a laminated structure of Ti/Al/Ti, Mo/Al/Mo, Mo/AlGe/Mo, or Ti/Cu.
The insulating base layer 200 is disposed on the third conductive layer. The insulating base layer 200 may include an organic insulating material such as polyacrylate resin, epoxy resin, phenol resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, or benzocyclobutene (BCB). The surface of the insulating base layer 200 may be flat.
A plurality of banks 410 and 420 may be disposed on the insulating substrate layer 200. A plurality of banks 410 and 420 are disposed to be spaced apart from and face each other in each of the pixels PX, and the first electrode 210 and the second electrode 220 may be disposed on the banks 410 and 420 (e.g., the first bank 410 and the second bank 420) spaced apart from each other. Fig. 2 shows such a case: three banks 410 and 420 (specifically, two first banks 410 and one second bank 420) are disposed in one pixel PX, and thus, two first electrodes 210 and one second electrode 220 are disposed. Fig. 2 shows a cross-sectional view of only one first bank 410 and one second bank 420, and the arrangement thereof may be equally applied to other first banks 410 not shown in fig. 2.
However, the number of banks 410 and 420 is not limited thereto. For example, a greater number of banks 410 and 420 may be disposed in one pixel PX, and thus, a greater number of first and second electrodes 210 and 220 may be disposed. The banks 410 and 420 may include at least one first bank 410 on which the first electrode 210 is disposed and at least one second bank 420 on which the second electrode 220 is disposed. In this case, the first and second banks 410 and 420 may be disposed to be spaced apart from and facing each other, and a plurality of banks may be alternately arranged in one direction. In some embodiments, two first banks 410 may be disposed to be spaced apart from each other, and one second bank 420 may be disposed between the spaced first banks 410.
Further, although not shown in fig. 2, the first and second electrodes 210 and 220 may include electrode trunk portions 210S and 220S and electrode branch portions 210B and 220B, respectively, as described above. It is understood that the first and second electrode branch portions 210B and 220B are disposed on the first and second banks 410 and 420, respectively.
The plurality of banks 410 and 420 may be made of substantially the same material and thus may be formed in one process. In this case, the banks 410 and 420 may form a grid pattern. The dikes 410 and 420 may include Polyimide (PI).
In addition, although not shown in the drawings, at least some of the plurality of banks 410 and 420 may be disposed at boundaries between the corresponding pixels PX to distinguish them from each other. In this case, the electrodes 210 and 220 may not be disposed on the banks 410 and 420 disposed at the boundaries between the respective pixels PX. These banks may be arranged in a substantially grid pattern together with the first bank 410 and the second bank 420 described above. At least some of the plurality of banks 410 and 420 disposed at the boundaries between the corresponding pixels PX may be disposed to cover electrode lines of the display device 10.
Each of the plurality of banks 410 and 420 may have a structure in which at least a portion thereof protrudes from the insulating base layer 200. Each of the dikes 410 and 420 may protrude upward with respect to a plane on which the light emitting element 300 is disposed, and at least a portion of the protruding portion may have an inclination. Each of the banks 410 and 420 protruded with an inclination may reflect light incident on the reflective layers 211 and 221 disposed thereon, which will be described later. Light directed from the light emitting element 300 to the reflective layers 211 and 221 may be reflected and transmitted to the outside of the display device 10, for example, over the banks 410 and 420. The shape of each of the protruding embankments 410 and 420 is not particularly limited. Although it is shown in fig. 2 that each of the banks 410 and 420 has a protruding structure having an angular corner shape in which two side surfaces are flat and one upper side is flat, the present invention is not limited thereto, and each of the banks 410 and 420 may have a structure protruding in a curved shape.
The reflective layers 211 and 221 may be disposed on the plurality of banks 410 and 420.
The first reflective layer 211 covers the first bank 410, and a portion of the first reflective layer 211 is electrically connected to the first drain electrode 123 of the first thin film transistor 120 through a fourth contact hole 319_1 penetrating the insulating base layer 200. The second reflective layer 221 covers the second bank 420, and a portion of the second reflective layer 221 is electrically connected to the power electrode 162 through a fifth contact hole 319_2 penetrating the insulating base layer 200.
The first reflective layer 211 may be electrically connected to the first drain electrode 123 of the first thin film transistor 120 through the fourth contact hole 319_1 in the pixel PX. Accordingly, the first thin film transistor 120 may be disposed in a region overlapping the pixel PX. It is shown in fig. 1 that the first reflective layer 211 is electrically connected to the first thin film transistor 120 through the first electrode contact hole CNTD disposed on the first electrode stem portion 210S. That is, the first electrode contact hole CNTD may be the fourth contact hole 319_ 1.
The second reflective layer 221 may also be electrically connected to the power supply electrode 162 through the fifth contact hole 319_2 in the pixel PX. It is shown in fig. 2 that the second reflective layer 221 is electrically connected to the power supply electrode 162 through the fifth contact hole 319_2 in one pixel PX. It is shown in fig. 1 that the second electrode 220 of each pixel PX is electrically connected to the power supply wiring 161 through a plurality of second electrode contact holes CNTS on the second electrode trunk portion 220S. That is, the second electrode contact hole CNTS may be the fifth contact hole 319_ 2.
As described above, in fig. 1, the first electrode contact hole CNTD and the second electrode contact hole CNTS are disposed on the first electrode stem portion 210S and the second electrode stem portion 220S, respectively. Accordingly, it is illustrated in fig. 2 that, in the cross-sectional view of the display device 10, the first electrode 210 and the second electrode 220 are electrically connected to the first thin film transistor 120 or the power supply wiring 161 through the fourth contact hole 319_1 and the fifth contact hole 319_2, respectively, in the region spaced apart from the banks 410 and 420 where the first electrode branch portion 210B and the second electrode branch portion 220B are disposed.
However, the present invention is not limited thereto. For example, in fig. 1, the second electrode contact hole CNTS may be disposed even at various positions on the second electrode trunk portion 220S, and in some cases, the second electrode contact hole CNTS may be disposed on the second electrode branch portion 220B. In addition, in some embodiments, the second reflective layer 221 may be connected to one second electrode contact hole CNTS or one fifth contact hole 319_2 in a region other than the pixel PX.
The display device 10 may include a region other than the light-emitting region where the light-emitting element 300 is disposed, for example, a non-light-emitting region where the light-emitting element 300 is not disposed. As described above, the second electrodes 220 of each pixel PX are electrically connected to each other through the second electrode trunk part 220S to receive the same electrical signal.
In some embodiments, in the case of the second electrode 220, the second electrode stem portion 220S may be electrically connected to the power supply electrode 162 through one second electrode contact hole CNTS in a non-light emitting region located at the outside of the display device 10. Unlike the display device 10 of fig. 1, even when the second electrode trunk part 220S is connected to the power supply electrode 162 through one contact hole, the second electrode trunk part 220S extends to the adjacent pixel PX and is electrically connected, so that the same electrical signal may be applied to the second electrode branch part 220B of each pixel PX. In the case of the second electrode 220 of the display device 10, the position of the contact hole for receiving the electrical signal from the power supply electrode 162 may vary according to the structure of the display device 10.
In addition, referring again to fig. 1 and 2, each of the reflective layers 211 and 221 may include a high-reflectivity material to reflect light emitted from the light emitting element 300. For example, each of the reflective layers 211 and 221 may include a material such as silver (Ag) or copper (Cu), but the present invention is not limited thereto.
The first electrode layer 212 and the second electrode layer 222 may be disposed on the first reflective layer 211 and the second reflective layer 221, respectively.
The first electrode layer 212 is directly disposed on the first reflective layer 211. The first electrode layer 212 may have substantially the same pattern as that of the first reflective layer 211. The second electrode layer 222 is disposed directly on the second reflective layer 221 and spaced apart from the first electrode layer 212. The second electrode layer 222 may have substantially the same pattern as that of the second reflective layer 221.
In an embodiment, the electrode layers 212 and 222 may cover the underlying reflective layers 211 and 221, respectively. That is, the electrode layers 212 and 222 may be formed to be larger than the reflective layers 211 and 221 to cover side surfaces of end portions of the reflective layers 211 and 221. However, the present invention is not limited thereto.
The first electrode layer 212 and the second electrode layer 222 may transmit an electrical signal transmitted to the first reflective layer 211 and the second reflective layer 221 connected to the first thin film transistor 120 or the power supply electrode 162 to a contact electrode which will be described later. The electrode layers 212 and 222 may include a transparent conductive material. For example, the electrode layers 212 and 222 may include a material such as Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), or Indium Tin Zinc Oxide (ITZO), but the present invention is not limited thereto. In some embodiments, the reflective layers 211 and 221 and the electrode layers 212 and 222 may have a structure in which a transparent conductive layer (such as ITO, IZO, or ITZO) and a metal layer (such as silver or copper) are stacked into one or more layers. For example, the reflective layers 211 and 221 and the electrode layers 212 and 222 may have a stacked structure of ITO/silver (Ag)/ITO.
The first reflective layer 211 and the first electrode layer 212 disposed on the first bank 410 constitute the first electrode 210. The first electrode 210 may protrude to regions extending from both ends of the first bank 410, and thus, the first electrode 210 may contact the insulating base layer 200 in the protruding regions. The second reflective layer 221 and the second electrode layer 222 disposed on the second bank 420 constitute a second electrode 220. The second electrode 220 may protrude to regions extending from both ends of the second bank 420, and thus, the second electrode 220 may contact the insulating base layer 200 in the protruding regions.
The first electrode 210 and the second electrode 220 may be disposed to cover the entire area of the first bank 410 and the entire area of the second bank 420, respectively. However, as described above, the first electrode 210 and the second electrode 220 are spaced apart from and face each other. As will be described later, a first insulating material layer 510 may be disposed between the first and second electrodes 210 and 220 spaced apart from each other, and the light emitting element 300 may be disposed on the first insulating material layer 510.
In addition, the first reflective layer 211 may receive a driving voltage from the first thin film transistor 120, and the second reflective layer 221 may receive a power voltage from the power wiring 161, so that the first electrode 210 and the second electrode 220 receive the driving voltage and the power voltage, respectively. The first electrode 210 may be electrically connected to the first thin film transistor 120, and the second electrode 220 may be electrically connected to the power supply wiring 161. Accordingly, the first and second contact electrodes 261 and 262 disposed on the first and second electrodes 210 and 220 may receive the driving voltage and the power supply voltage. The driving voltage and the power voltage are transmitted to the light emitting element 300, and a predetermined current flows through the light emitting element 300 to emit light.
The first insulating material layer 510 is disposed on the first electrode 210 and the second electrode 220 to partially cover them. The first insulating material layer 510 may be disposed to cover most of the upper surfaces of the first and second electrodes 210 and 220, and may expose a portion of the first and second electrodes 210 and 220. The first insulating material layer 510 may be disposed in a space between the first electrode 210 and the second electrode 220. The first insulating material layer 510 may have an island shape or a line shape formed along a space between the first electrode branch portion 210B and the second electrode branch portion 220B in a plan view.
In fig. 2, it is shown that the first insulating material layer 510 is disposed in a space between one first electrode 210 (e.g., the first electrode branch portion 210B) and one second electrode 220 (e.g., the second electrode branch portion 220B). However, as described above, since the number of the first electrodes 210 may be plural and the number of the second electrodes 220 may be plural, the first insulating material layer 510 may also be disposed between one first electrode 210 and another second electrode 220 or between one second electrode 220 and another first electrode 210. Further, the first insulating material layer 510 may be disposed on a side opposite to facing sides of the first and second electrodes 210 and 220 to partially cover them. That is, the first insulating material layer 510 may be disposed to expose the centers of the first and second electrodes 210 and 220.
The light emitting element 300 is disposed on the first insulating material layer 510. The first insulating material layer 510 may be disposed between the light emitting element 300 and the insulating base layer 200. The lower surface of the first insulating material layer 510 may be in contact with the insulating base layer 200, and the light emitting element 300 may be disposed on the upper surface of the first insulating material layer 510. In addition, both side surfaces of the first insulating material layer 510 may be in contact with the first and second electrodes 210 and 220 to electrically insulate them from each other.
The first insulating material layer 510 may overlap a portion of an area on each of the electrodes 210 and 220, for example, a portion of an area protruding in a direction in which the first and second electrodes 210 and 220 face each other. The first insulating material layer 510 may also be disposed in a region where the inclined side surface and the flat upper surface of each of the banks 410 and 420 overlap each of the electrodes 210 and 220.
For example, the first insulating material layer 510 may cover each end portion protruding in a direction in which the first and second electrodes 210 and 220 face each other. The first insulating material layer 510 may be in contact with a portion of the upper surface of the insulating base layer 200, and may be in contact with a side surface of each of the electrodes 210 and 220 and a portion of the upper surface of each of the electrodes 210 and 220. Accordingly, the first insulating material layer 510 may protect a region overlapping each of the electrodes 210 and 220 and electrically insulate the electrodes 210 and 220 from each other. In addition, the first insulating material layer 510 may prevent the first and second conductive semiconductor layers 310 and 320 of the light emitting element 300 from being in direct contact with other substrates to prevent damage to the light emitting element 300.
However, the present invention is not limited thereto, and the first insulating material layer 510 may be disposed only in a region overlapping the inclined surfaces of the banks 410 and 420 among regions on the first and second electrodes 210 and 220. In this case, the lower surface of the first insulating material layer 510 is terminated at the inclined surface of each of the banks 410 and 420, and each of the electrodes 210 and 220 disposed on a portion of the inclined surface of each of the banks 410 and 420 is exposed to be in contact with the contact electrode 260.
In addition, the first insulating material layer 510 may be disposed such that both ends of the light emitting element 300 are exposed. Accordingly, the contact electrode 260 may contact the exposed upper surface of each of the electrodes 210 and 220 and both ends of the light emitting element 300, and the contact electrode 260 may transmit an electrical signal applied to the first and second electrodes 210 and 220 to the light emitting element 300.
The at least one light emitting element 300 may be disposed between the first electrode 210 and the second electrode 220. Although one light emitting element 300 is shown in fig. 2 to be disposed between the first electrode 210 and the second electrode 220 in cross section, it is apparent that a plurality of light emitting elements 300 may be arranged in different directions (for example, the second direction D2) on a plane as shown in fig. 1.
Specifically, one end of the light emitting element 300 may be electrically connected to the first electrode 210, and the other end thereof may be electrically connected to the second electrode 220. Both ends of the light emitting element 300 may be in contact with the first and second contact electrodes 261 and 262, respectively.
In addition, although it is illustrated in fig. 1 that only the light emitting elements 300 emitting the same color of light are arranged in each pixel PX, the present invention is not limited thereto. As described above, the light emitting elements 300 emitting lights of colors different from each other may be arranged in one pixel PX.
The light emitting element 300 may be a light emitting diode. The light emitting element 300 may be a nanostructure whose size is typically nanometer. The light emitting element 300 may be an inorganic light emitting diode including an inorganic material. In the case where the light emitting element 300 is an inorganic light emitting diode, when a light emitting material having an inorganic crystal structure is disposed between two electrodes facing each other and an electric field is formed in the light emitting material in a specific direction, the inorganic light emitting diode may be aligned between two electrodes having a specific polarity formed therein.
In some embodiments, the light emitting element 300 may include a first conductive semiconductor layer 310, an element active layer 330, a second conductive semiconductor layer 320, and an electrode material layer 370, which are sequentially stacked, and an insulating layer 380 surrounding outer circumferential surfaces of the layers. In the stacking order of the above layers in the light emitting element 300, the first conductive semiconductor layer 310, the element active layer 330, the second conductive semiconductor layer 320, and the electrode material layer 370 are arranged in a horizontal direction with respect to the insulating base layer 200. In other words, the light emitting element 300 in which a plurality of layers are formed may be disposed in a horizontal direction horizontal to the insulating base layer 200. However, the present invention is not limited thereto, and the light emitting element 300 may be aligned such that the above-described lamination direction is reversed between the first electrode 210 and the second electrode 220.
Further, although it is illustrated in fig. 2 that only one light emitting element 300 is provided, as described above, a plurality of light emitting elements 300 having diameters different from each other may be arranged between the first electrode 210 and the second electrode 220. Details of the light emitting element will be described later.
The second insulating material layer 520 may be disposed to overlap at least a portion of an area on the light emitting element 300. The second insulating material layer 520 may protect the light emitting element 300, and may fix the light emitting element 300 between the first electrode 210 and the second electrode 220.
The second insulating material layer 520 may be disposed only on the upper surface of the light emitting element 300 in a cross-sectional view, or as shown in fig. 2, the second insulating material layer 520 may be disposed to surround the outer surface of the light emitting element 300. That is, similar to the first insulating material layer 510, the second insulating material layer 520 may be disposed to extend in the second direction D2 along the space between the first and second electrode branch portions 210B and 220B to have an island shape or a line shape in a plan view.
Further, a part of the material of the second insulating material layer 520 may be disposed even in a region where the lower surface of the light emitting element 300 is in contact with the first insulating material layer 510. Such a configuration may be formed when the light emitting element 300 is aligned on the first insulating material layer 510 and the second insulating material layer 520 is disposed on the first insulating material layer 510 when the display device 10 is manufactured. When some voids are formed in the first insulating material layer 510 contacting the lower surface of the light emitting element 300, a portion of the material of the second insulating material layer 520 penetrates into the voids when the second insulating material layer 520 is formed to form the configuration.
The second insulating material layer 520 is disposed such that both side surfaces of the light emitting element 300 are exposed. That is, since the length of the second insulating material layer 520 disposed on the upper surface of the light emitting element 300 in the cross section measured in the uniaxial direction is shorter than the length of the light emitting element 300, the second insulating material layer 520 may be recessed inward from both side surfaces of the light emitting element 300. Accordingly, the side surfaces of the first insulating material layer 510, the light emitting element 300, and the second insulating material layer 520 may be stepwise stacked. In this case, the contact electrodes 261 and 262, which will be described later, may be in smooth contact with both ends of the light emitting element 300. However, the present invention is not limited thereto, and the length of the second insulating material layer 520 may be matched with the length of the light emitting element 300 so that both sides thereof may be aligned with each other.
In addition, a second insulating material layer 520 may be disposed to cover the first insulating material layer 510 and then patterned in a region where the light emitting element 300 is exposed to contact with the contact electrode 260. The process of patterning the second insulating material layer 520 may be performed by a general dry etching or wet etching method. Here, in order to prevent the first insulating material layer 510 from being patterned, the first insulating material layer 510 and the second insulating material layer 520 may include materials having etch selectivity different from each other. In other words, when the second insulating material layer 520 is patterned, the first insulating material layer 510 may serve as an etch stop.
Therefore, even when the second insulating material layer 520 covers the outer surface of the light emitting element 300 and is patterned to expose both ends of the light emitting element 300, the material of the first insulating material layer 510 is not damaged. Specifically, the first insulating material layer 510 and the light emitting element 300 may form smooth contact surfaces at both ends of the light emitting element 300, and the light emitting element 300 is in contact with the contact electrode 260 at the smooth contact surfaces.
A first contact electrode 261 disposed on the first electrode 210 and overlapping at least a portion of the second insulating material layer 520 and a second contact electrode 262 disposed on the second electrode 220 and overlapping at least a portion of the second insulating material layer 520 may be disposed on the second insulating material layer 520.
The first and second contact electrodes 261 and 262 may be disposed on the upper surfaces of the first and second electrodes 210 and 220, respectively. Specifically, the first and second contact electrodes 261 and 262 may be in contact with the first and second electrode layers 212 and 222, respectively, in regions where the first insulating material layer 510 is patterned to expose a portion of the first electrode 210 and a portion of the second electrode 220. Each of the first and second contact electrodes 261 and 262 may be in surface contact with one end side of the light emitting element 300 (e.g., the first conductive semiconductor layer 310, the second conductive semiconductor layer 320, or the electrode material layer 370). Accordingly, the first and second contact electrodes 261 and 262 may transmit an electrical signal applied to the first and second electrode layers 212 and 222 to the light emitting element 300.
The first contact electrode 261 may be disposed on the first electrode 210 to partially cover the first electrode 210, and may partially contact the light emitting element 300, the first insulating material layer 510, and the second insulating material layer 520. One end of the first contact electrode 261 in a direction in which the second contact electrode 262 is disposed may be disposed on the second insulating material layer 520. The second contact electrode 262 may be disposed on the second electrode 220 to partially cover the second electrode 220, and may partially contact the light emitting element 300, the first insulating material layer 510, and the third insulating material layer 530. An end of the second contact electrode 262 in a direction in which the first contact electrode 261 is disposed may be disposed on the third insulating material layer 530.
A region where the first and second insulating material layers 510 and 520 are disposed to cover the first and second electrodes 210 and 220 on the upper surfaces of the first and second banks 410 and 420 may be patterned. Accordingly, the first electrode layer 212 of the first electrode 210 and the second electrode layer 222 of the second electrode 220 are exposed to be electrically connected to the contact electrodes 261 and 262, respectively.
The first and second contact electrodes 261 and 262 may be disposed to be spaced apart from each other on the second insulating material layer 520 or the third insulating material layer 530. That is, the first and second contact electrodes 261 and 262 contact the second insulating material layer 520 or the third insulating material layer 530 and the light emitting element 300, but the first and second contact electrodes 261 and 262 are spaced apart from each other in the stacking direction on the second insulating material layer 520 to be electrically insulated from each other. Accordingly, the first contact electrode 261 and the second contact electrode 262 may receive different power from the first thin film transistor 120 and the power supply wiring 161. For example, the first contact electrode 261 may receive a driving voltage applied to the first electrode 210 from the first thin film transistor 120, and the second contact electrode 262 may receive a common power voltage applied to the second electrode 220 from the power source wiring 161. However, the present invention is not limited thereto.
The contact electrodes 261 and 262 may include a conductive material. For example, the contact electrodes 261 and 262 may include ITO, IZO, ITZO, or aluminum (Al). However, the present invention is not limited thereto.
In addition, the contact electrodes 261 and 262 may include the same material as that of the electrode layers 212 and 222. The contact electrodes 261 and 262 may be disposed on the electrode layers 212 and 222 in substantially the same pattern to contact the electrode layers 212 and 222. For example, the first contact electrode 261 contacting the first electrode layer 212 and the second contact electrode 262 contacting the second electrode layer 222 may receive electrical signals applied from the first electrode layer 212 and the second electrode layer 222 and transmit the electrical signals to the light emitting element 300.
A third insulating material layer 530 may be disposed on the first contact electrode 261 to electrically insulate the first and second contact electrodes 261 and 262 from each other. The third insulating material layer 530 may be disposed to cover the first contact electrode 261, but may be disposed not to overlap a portion of the light emitting element 300 such that the light emitting element 300 is in contact with the second contact electrode 262. The third insulating material layer 530 may partially contact the first contact electrode 261, the second contact electrode 262, and the second insulating material layer 520 on the upper surface of the second insulating material layer 520. The third insulating material layer 530 may be disposed to cover an end of the first contact electrode 261 on the upper surface of the second insulating material layer 520. Accordingly, the third insulating material layer 530 may protect the first contact electrode 261 and electrically insulate the first and second contact electrodes 261 and 262 from each other.
One end of the third insulating material layer 530 in a direction in which the second electrode 220 is disposed may be aligned with one side surface of the second insulating material layer 520.
In addition, in some embodiments, the third insulating material layer 530 may be omitted in the display device 10. Accordingly, the first and second contact electrodes 261 and 262 may be disposed on substantially the same plane, and the first and second contact electrodes 261 and 262 may be electrically insulated from each other by a passivation layer 550, which will be described later.
A passivation layer 550 may be formed on the third insulating material layer 530 and the second contact electrode 262 for protecting components disposed on the insulating base layer 200 from an external environment. When the first and second contact electrodes 261 and 262 are exposed, a problem of disconnection of the contact electrode material due to electrode damage may occur, so the passivation layer 550 may cover these members. That is, the passivation layer 550 may be disposed to cover the first electrode 210, the second electrode 220, the light emitting element 300, and the like. As described above, when the third insulating material layer 530 is omitted, the passivation layer 550 may be formed on the first and second contact electrodes 261 and 262. In this case, the passivation layer 550 may electrically insulate the first and second contact electrodes 261 and 262 from each other.
Each of the first insulating material layer 510, the second insulating material layer 520, the third insulating material layer 530, and the passivation layer 550 described above may include an inorganic insulating material. For example, the first insulating material layer 510, the second insulating material layer 520, the third insulating material layer 530, and the passivation layer 550 may include, for example, silicon oxide (SiO)x) Silicon nitride (SiN)x) Silicon oxynitride (SiO)xNy) Alumina (Al)2O3) Or an inorganic insulating material of aluminum nitride (AlN). The first insulating material layer 510, the second insulating material layer 520, the third insulating material layer 530, and the passivation layer 550 may include the same material or may include materials different from each other. In addition, various materials that impart insulating properties to the first insulating material layer 510, the second insulating material layer 520, the third insulating material layer 530, and the passivation layer 550 may be applicable.
In addition, as described above, the first insulating material layer510 and the second insulating material layer 520 may have different etching selectivity. For example, when the first insulating material layer 510 includes silicon oxide (SiO)x) When, the second insulating material layer 520 may include silicon nitride (SiN)x). As another example, when the first insulating material layer 510 includes silicon nitride (SiN)x) When, the second insulating material layer 520 may include silicon oxide (SiO)x). However, the present invention is not limited thereto.
In addition, the light emitting element 300 may be manufactured on a substrate by an epitaxial growth method. The light emitting element 300 can be manufactured by a method of: a seed layer for forming a semiconductor layer is formed on a substrate, and a desired semiconductor material is deposited on the seed layer to grow the seed layer. Hereinafter, the structure of the light emitting element 300 according to various embodiments will be described in detail with reference to fig. 3.
Fig. 3 is a schematic perspective view of a light emitting element according to an embodiment.
Referring to fig. 3, the light emitting element 300 may include a plurality of conductive semiconductor layers 310 and 320, an element active layer 330, an electrode material layer 370, and an insulating layer 380. The electrical signal applied from the first electrode 210 and the second electrode 220 may be transmitted to the element active layer 330 through the plurality of conductive semiconductor layers 310 and 320 to emit light.
Specifically, the light emitting element 300 may include a first conductive semiconductor layer 310, a second conductive semiconductor layer 320, an element active layer 330 disposed between the first conductive semiconductor layer 310 and the second conductive semiconductor layer 320, an electrode material layer 370 disposed on the second conductive semiconductor layer 320, and an insulating layer 380. Although it is illustrated in fig. 3 that the light emitting element 300 has a structure in which the first conductive semiconductor layer 310, the element active layer 330, the second conductive semiconductor layer 320, and the electrode material layer 370 are sequentially stacked, the present invention is not limited thereto. The electrode material layer 370 may be omitted, and in some embodiments, the electrode material layer 370 may also be disposed on at least one of both side surfaces of the first and second conductive semiconductor layers 310 and 320. Hereinafter, the light emitting element 300 of fig. 3 will be described as an example, and it is apparent that the description of the light emitting element 300 to be described later can be equally applied even if the light emitting element 300 further includes other structures.
The first conductive semiconductor layer 310 may be an n-type semiconductor layer. For example, when the light emitting element 300 emits light of a blue wavelength band, the first conductive semiconductor layer 310 may have InxAlyGa1-x-yN (x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and x + y is more than or equal to 0 and less than or equal to 1). For example, the semiconductor material may be at least one of InAlGaN, GaN, AlGaN, InGaN, AlN, and InN doped with an n-type conductive dopant. The first conductive semiconductor layer 310 may be doped with a first conductive dopant, for example, the first conductive dopant may be Si, Ge, Sn, or the like. The length of the first conductive semiconductor layer 310 may be in the range of 1.5 μm to 5 μm, but is not limited thereto.
The second conductive semiconductor layer 320 may be a p-type semiconductor layer. For example, when the light emitting element 300 emits light of a blue wavelength band, the second conductive semiconductor layer 320 may have InxAlyGa1-x-yN (x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and x + y is more than or equal to 0 and less than or equal to 1). For example, the semiconductor material may be at least one of InAlGaN, GaN, AlGaN, InGaN, AlN, and InN doped with a p-type conductive dopant. The second conductive semiconductor layer 320 may be doped with a second conductive dopant, for example, the second conductive dopant may be Mg, Zn, Ca, Se, Ba, or the like. The length of the second conductive semiconductor layer 320 may be in the range of 0.08 to 0.25 μm, but is not limited thereto.
The element active layer 330 may be disposed between the first conductive semiconductor layer 310 and the second conductive semiconductor layer 320, and may include a material having a single quantum well structure or a multiple quantum well structure. When the element active layer 330 includes a material having a multiple quantum well structure, the multiple quantum well structure may be a structure in which a plurality of quantum layers and a plurality of well layers are alternately stacked. The element active layer 330 may emit light by combination of electron-hole pairs according to an electrical signal applied through the first and second conductive semiconductor layers 310 and 320. For example, when the element active layer 330 emits light in the blue wavelength band, it may include a material such as AlGaN or AlInGaN. Specifically, when the element active layer 330 has a multiple quantum well structure in which a plurality of quantum layers and a plurality of well layers are alternately stacked, the quantum layers may include a material such as AlGaN or AlInGaN, and the well layers may include a material such as GaN or AlGaN. However, the present invention is not limited thereto. The element active layer 330 may have a structure in which a semiconductor material having a high band gap energy and a semiconductor material having a low band gap energy are alternately stacked, and may include other III-V semiconductor materials according to a wavelength band in which light is emitted. Therefore, the light emitted from the element active layer 330 is not limited to the light of the blue wavelength band, and in some cases, the element active layer 330 may emit the light of the red wavelength band or the light of the green wavelength band. The length of the element active layer 330 may be in the range of 0.05 μm to 0.25 μm, but is not limited thereto.
The light emitted from the element active layer 330 may be emitted not only onto the outer surface of the light emitting element 300 in the length direction but also onto both side surfaces thereof. That is, the direction of light emitted from the element active layer 330 is not limited to one direction.
In addition, the element active layer 330 of the light emitting element 300 may have different wavelength bands of emitted light depending on the difference in composition. Specifically, the element active layer 330 may emit light of different colors depending on the kind of active material of the element active layer 330, but even if the element active layer 330 includes the same kind of active material, deviation of emission wavelength may occur depending on the composition ratio in the element active layer 330 and the lattice strain of the semiconductor crystal. In other words, the element active layer 330 may include the same kind of active material to have any band gap energy, but when the light emitting element 300 is manufactured, the band gap energy varies according to the lattice strain of the active material crystal formed in the element active layer 330, and thus, deviation of a wavelength band of emitted light may occur.
Here, when the plurality of light emitting elements 300 are formed to have diameters different from each other, lattice strain of the active material crystal included in the element active layer 330 of each of the light emitting elements 300 may vary. The band gap energy of the element active layer 330 may vary according to different lattice strains between the light emitting elements 300, and thus, the wavelength of emitted light may vary.
Therefore, based on the light emitting element 300 that emits light in an arbitrary wavelength band, the emission wavelength of the light emitting element 300 having a deviation from the light in the wavelength band can be controlled by adjusting the diameter of the light emitting element 300.
The electrode material layer 370 may be an ohmic contact electrode. However, the present invention is not limited thereto, and the electrode material layer 370 may be a schottky contact electrode. The electrode material layer 370 may include a conductive metal. For example, the electrode material layer 370 may include at least one of aluminum (Al), titanium (Ti), indium (In), gold (Au), and silver (Ag). The electrode material layer 370 may include the same material, and may also include a different material. However, the present invention is not limited thereto.
The insulating layer 380 may be formed outside the first conductive semiconductor layer 310, the second conductive semiconductor layer 320, the element active layer 330, and the electrode material layer 370 to protect these members. For example, the insulating layer 380 is formed to surround the side surface of the member, and thus may not be formed at both ends of the light emitting element 300 in the length direction, for example, at both ends of the light emitting element 300 where the first conductive semiconductor layer 310 and the electrode material layer 370 are disposed. However, the present invention is not limited thereto.
The insulating layer 380 may include a material having insulating properties, such as silicon oxide (SiO)x) Silicon nitride (SiN)x) Silicon oxynitride (SiO)xNy) Aluminum nitride (AlN) or aluminum oxide (Al)2O3). Accordingly, the insulating layer 380 can prevent an electrical short that may occur when the element active layer 330 is in direct contact with the first electrode 210 or the second electrode 220. Further, since the insulating layer 380 can protect the outer circumferential surface of the light emitting element 300 including the element active layer 330, the insulating layer 380 can prevent a decrease in light emitting efficiency.
Although it is shown in the drawings that the insulating layer 380 may extend in a length direction to cover the first conductive semiconductor layer 310 to the electrode material layer 370, the present invention is not limited thereto. The insulating layer 380 may cover only the first conductive semiconductor layer 310, the element active layer 330, and the second conductive semiconductor layer 320, or may cover only a portion of the outer surface of the electrode material layer 370 to expose a portion of the outer surface of the electrode material layer 370.
The thickness of the insulating layer 380 may be in the range of 0.5 μm to 1.5 μm, but is not limited thereto.
Further, in some embodiments, the outer circumferential surface of the insulating layer 380 may be surface-treated. As described above, when aligning the light emitting element 300 between the electrodes 210 and 220, the light emitting element 300 may be coated in a dispersed state in a solution. Here, the insulating layer 380 may be subjected to hydrophobic or hydrophilic surface treatment so that the light emitting elements 300 may be maintained in a state in which the light emitting elements 300 are dispersed with each other in a solution. Therefore, when the light emitting elements 300 are aligned, the light emitting elements 300 may be aligned between the first and second electrodes 210 and 220 without being condensed.
The light emitting element 300 may be cylindrical. Therefore, a sectional view of the light emitting element 300 taken in a length direction passing through both ends of the light emitting element 300 may have a rectangular shape. However, the shape of the light emitting element 300 is not limited thereto, and may have various shapes such as a cube, a rectangular parallelepiped, and a hexagonal cylinder. The length of the light emitting element 300 may be in the range of 1 μm to 10 μm or 2 μm to 5 μm, and may preferably be about 4 μm. Further, the diameter of the light emitting element 300 may be in the range of 300nm to 700nm, and as described above, the plurality of light emitting elements 300 included in the display device 10 may have different diameters from each other according to the difference in composition of the element active layer 330. Preferably, the diameter of the light emitting element 300 may be about 500 nm.
In addition, as described above, the plurality of light emitting elements 300 may have different diameters from each other. In an exemplary embodiment, the difference in diameter between any one light emitting element 300 and another light emitting element 300 having different diameters may be in the range of 2% to 16% of the diameter of the any one light emitting element 300. For example, when any one of the light emitting elements (e.g., the second light emitting element 302) has a diameter of 500nm, the first light emitting element 301 may have a diameter in a range of 420nm to 490nm, and the third light emitting element 303 may have a diameter in a range of 510nm to 580 nm. However, the present invention is not limited thereto, and as will be described later, the diameter of the light emitting element 300 may vary according to the difference in the composition of the element active layer 330.
Hereinafter, the light emitting element 300 shown in fig. 3 will be described as an example for convenience, but as described above, this case may be equally applied even to a case including a larger number of electrode material layers 370 or also including other structures.
In addition, fig. 4 is a sectional view taken along line IV-IV' of fig. 1.
The line IV-IV' of fig. 1 may be a line passing through the centers of both ends of the light emitting element 300 aligned between the first electrode 210 and the second electrode 220 in the first direction D1, and fig. 4 is a sectional view taken along a line passing through the centers of both ends of the plurality of light emitting elements 300.
Referring to fig. 2 and 4, lower surfaces of the first, second, and third light emitting elements 301, 302, and 303 may be partially in contact with the first and second insulating material layers 510 and 520, and upper surfaces of the first, second, and third light emitting elements 301, 302, and 303 may be fixed between the first and second electrodes 210 and 220 by the second insulating material layer 520. A third insulating material layer 530 and a passivation layer 550 may be formed on the second insulating material layer 520, and the structure illustrated in fig. 4 is the same as that described with reference to fig. 1 and 2.
The plurality of light emitting elements 300 included in the display device 10 may include a first light emitting element 301, a second light emitting element 302, and a third light emitting element 303 having diameters different from each other. The first light emitting element 301, the second light emitting element 302, and the third light emitting element 303 have different diameters from each other, but may emit light of substantially the same wavelength band.
The diameter r2 of the second light emitting element 302 may be larger than the diameter r1 of the first light emitting element 301, but smaller than the diameter r3 of the third light emitting element 303. In other words, the first light emitting element 301, the second light emitting element 302, and the third light emitting element 303 may be formed such that the diameters sequentially increase. This may mean that the diameter of the light emitting element 300 is adjusted at the time of manufacturing the light emitting element 300 so that the wavelength band of light emitted from the element active layer 330 of each of the light emitting elements 300 is shifted.
As described above, when the light emitting element 300 is manufactured, the element active layers 330 of the plurality of light emitting elements 300 may have different compositions from each other, and thus, the light emitting elements 300 may have different band gap energies from each other. For example, when the first light emitting element 301, the second light emitting element 302, and the third light emitting element 303 grown on the same wafer substrate all have the same diameter, the element active layer 330 of the light emitting element may emit light of different wavelengths. The element active layer 330 of the first light emitting element 301 may emit first light L1 of a first wavelength band, the element active layer 330 of the second light emitting element 302 may emit second light L2 of a second wavelength band, and the element active layer 330 of the third light emitting element 303 may emit third light L3 of a third wavelength band.
Here, when the second light L2, which is the light emitted by the element active layer 330 of the second light-emitting element 302, is set as a reference, the light emitted by the element active layer 330 of the first light-emitting element 301 and the third light-emitting element 303 may have a wavelength band deviation from the second light L2. However, in order to minimize the deviation of the wavelength of the light emitted by the light emitting element 300, the light emitting element 300 may have different diameters so that the emission wavelength may be shifted. By controlling the lattice strain of the element active layer 330 by varying the diameter of each of the light emitting elements 300, the first light emitting element 301, the second light emitting element 302, and the third light emitting element 303 can be frequency shifted to emit light having substantially the same wavelength.
As an example, the diameter r1 of the first light emitting element 301 may be smaller than the diameter r2 of the second light emitting element 302, and light emitted from the element active layer 330 of the first light emitting element 301 may be blue-shifted such that its wavelength is shortened from the first light L1 to the second light L2. Further, the diameter r3 of the third light emitting element 303 may be larger than the diameter r2 of the second light emitting element 302, and the light emitted from the element active layer 330 of the third light emitting element 303 may be red-shifted so that the wavelength thereof becomes longer from the third light L3 to the second light L2. Therefore, the first light emitting element 301, the second light emitting element 302, and the third light emitting element 303 may emit light of substantially the same wavelength band (e.g., the second light L2). However, the present invention is not limited thereto, and the plurality of light emitting elements 300 included in the display device 10 may include a greater number of light emitting elements 300 having different diameters.
As described above, when the light emitting element 300 is manufactured, the first, second, and third light emitting elements 301, 302, and 303 having different diameters may be manufactured by forming the etching pattern layer 1700 (shown in fig. 8) including the nanopatterns 1710, 1720, and 1730 (shown in fig. 8) having diameters different from each other. In the step of vertically etching the semiconductor structure 3000 (shown in fig. 6) grown on the wafer substrate, the nanopatterns 1710, 1720, and 1730 having different diameters from each other may be formed, and thus the finally manufactured light emitting element 300 has different diameters but may emit light of substantially the same wavelength band. Accordingly, the plurality of light emitting elements 300 may minimize the deviation of the emission wavelength, and the display device 10 according to the embodiment may improve the purity and reliability of the light emitted from each pixel PX.
Hereinafter, a method of manufacturing the light emitting element 300 according to the embodiment will be described in detail with reference to fig. 5 to 16.
Fig. 5 to 16 are sectional views schematically illustrating a method of manufacturing a light emitting element according to an embodiment.
Fig. 5 and 6 are cross-sectional views schematically illustrating a method of forming a semiconductor structure according to an embodiment.
First, referring to fig. 5, a lower base layer 1000 is prepared, the lower base layer 1000 including a base substrate 1100 and a buffer material layer 1200 formed on the base substrate 1100. As shown in fig. 5, the lower substrate layer 1000 may have a structure in which a base substrate 1100 and a buffer material layer 1200 are sequentially stacked.
The base substrate 1100 may be a sapphire substrate (Al)2O3) Or a transparent substrate such as a glass substrate. However, the present invention is not limited thereto, and the base substrate 1100 may be a conductive substrate including GaN, SiC, ZnO, Si, GaP, or GaAs. Hereinafter, it will be described that the base substrate 1100 is a sapphire substrate (Al)2O3) The case (1). The thickness of the base substrate 1100 is not particularly limited, but, for example, the base substrate 1100 may have a thickness in a range of 400 μm to 1500 μm.
A plurality of conductive semiconductor layers are formed on the base substrate 1100. The plurality of conductive semiconductor layers grown by the epitaxial method may be grown by forming a seed and depositing a crystalline material thereon. Here, the conductive semiconductor layer may be formed by electron beam deposition, Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), Plasma Laser Deposition (PLD), dual-type thermal evaporation (dual-type thermal evaporation), sputtering, or Metal Organic Chemical Vapor Deposition (MOCVD), and preferably, may be formed by Metal Organic Chemical Vapor Deposition (MOCVD). However, the present invention is not limited thereto.
The precursor material for forming the plurality of conductive semiconductor layers is not particularly limited within a range that can be generally selected to form a target material. For example, the precursor material may be a metal precursor containing an alkyl group (such as a methyl group or an ethyl group). For example, the precursor material may be a material such as trimethylgallium (Ga (CH)3)3) Trimethylaluminum (Al (CH)3)3) Or triethyl phosphate ((C)2H5)3PO4) But is not limited thereto. Hereinafter, a method of forming a plurality of conductive semiconductor layers, process conditions thereof, and the like will be omitted, and the order of the method of manufacturing the light emitting element 300 and the stacked structure of the light emitting element 300 will be described in detail.
A buffer material layer 1200 is formed on the base substrate 1100. Although one buffer material layer 1200 is shown stacked in the drawings, the present invention is not limited thereto, and a plurality of buffer material layers 1200 may be formed. A buffer material layer 1200 may be disposed on the base substrate 1100 to reduce a difference in lattice constant of the first conductive semiconductor layer 3100. In a step to be described later, the buffer material layer 1200 may provide a seed so that crystals of the first conductive semiconductor layer 3100 may be easily grown thereon.
As an example, the buffer material layer 1200 may include an undoped semiconductor, and may include substantially the same material as that of the first conductive semiconductor layer 3100, but may include a material undoped with an n-type or p-type dopant. In an exemplary embodiment, the buffer material layer 1200 may include at least one of undoped InAlGaN, GaN, AlGaN, InGaN, AlN, and InN, but the material thereof is not limited thereto.
In addition, although not shown in fig. 5, a separation layer 1300 (shown in fig. 21) may also be provided on the buffer material layer 1200. As will be described later, a separation layer 1300 may be provided on the buffer material layer 1200 to perform a chemical separation method (chemical lift-off, CLO) for removing the separation layer 1300 when separating the element ROD from the lower base layer 1000. Therefore, the end surface of the manufactured light emitting element 300 can be formed to be relatively flat. For a more detailed description, reference is made to other embodiments.
Next, referring to fig. 6, a first conductive semiconductor layer 3100, an active material layer 3300, a second conductive semiconductor layer 3200, and a conductive electrode material layer 3700 are formed on the buffer material layer 1200 of the lower base layer 1000 to form a semiconductor structure 3000.
The semiconductor structure 3000 may be partially etched in a step to be described later to form an element bar ROD (shown in fig. 12). The various material layers included in semiconductor structure 3000 may be formed by performing conventional processes as described above. The first conductive semiconductor layer 3100, the active material layer 3300, the second conductive semiconductor layer 3200, and the conductive electrode material layer 3700 may be sequentially formed on the separation layer 1300, and the first conductive semiconductor layer 3100, the active material layer 3300, the second conductive semiconductor layer 3200, and the conductive electrode material layer 3700 may include the same material as that of the first conductive semiconductor layer 310, the element active layer 330, the second conductive semiconductor layer 320, and the electrode material layer 370 of the light emitting element 300, respectively.
Although not shown in the drawings, the light emitting element 300 may omit the electrode material layer 370, or may further include another electrode material layer 370 under the first conductive semiconductor layer 310. In other words, unlike fig. 6, in the semiconductor structure 3000, the conductive electrode material layer 3700 may be omitted, or another conductive electrode material layer may be formed under the first conductive semiconductor layer 3100. However, hereinafter, a case where the semiconductor structure 3000 includes the conductive electrode material layer 3700 will be described as an example.
Fig. 7 is a flowchart showing a step of forming an element bar in a method of manufacturing a light emitting element according to the embodiment.
Referring to fig. 7, a method of manufacturing a light emitting element according to an embodiment may include the steps of: (S100) forming a semiconductor structure 3000 on the lower base layer 1000; (S200) measuring lights having wavelength bands different from each other emitted from the semiconductor structure 3000 to define a wavelength area WA on the semiconductor structure 3000; and (S300) forming nano- patterns 1710, 1720, and 1730 having different diameters from each other and spaced apart from each other on the semiconductor structure 3000 according to the wavelength area WA, and etching the semiconductor structure 3000 to form an element ROD.
Depending on the performance or quality of the fabrication equipment, the semiconductor structure 3000 formed on the lower substrate layer 1000 may have such a region: its composition is partially non-uniform depending on its spatial location. For example, when the semiconductor structure 3000 is formed by Metal Organic Chemical Vapor Deposition (MOCVD), the precursor material disposed on the lower substrate layer 1000 may be in the form of a vapor phase. The precursor material in the vapor phase may be disposed on the lower substrate layer 1000 in an uneven distribution, and thus, the semiconductor structure 3000 formed by depositing the precursor material may have an uneven composition according to spatial positions.
Here, when a difference in composition of the active material layer 3300 occurs according to a spatial position, a plurality of light emitting elements 300 manufactured to have the same diameter may include the element active layer 330 having a composition different from each other. In this case, the plurality of light emitting elements 300 manufactured at different positions in the semiconductor structure 3000 may have a deviation in the wavelength band of emitted light.
Therefore, in order to minimize the deviation of the emission band that may occur in the plurality of light emitting elements 300, the method of manufacturing the light emitting elements 300 according to the embodiment may further include the steps of: in the step of etching the semiconductor structure 3000 in the direction perpendicular to the lower base layer 1000, the etching pattern layers 1700 having different sizes from each other are formed, thereby forming a plurality of element RODs ROD having different diameters from each other. Therefore, even if the element active layers 330 of the light emitting elements 300 have different compositions from each other, a plurality of light emitting elements 300 manufactured by performing the following steps can emit light of substantially the same wavelength band because they have different diameters.
The method of manufacturing a light emitting element according to the embodiment may include the steps of: (S200) before forming the etching pattern layer 1700 to define the wavelength area WA on the semiconductor structure 3000, lights emitted from the semiconductor structure 3000 having wavelength bands different from each other are measured.
As described above, the semiconductor structure 3000 (e.g., the active material layer 3300) formed on the lower base layer 1000 may emit light of different wavelength bands according to spatial positions. Wavelength regions WA emitting light of different wavelength bands are defined on the semiconductor structure 3000, and thus, nanopatterns 1710, 1720 and 1730 having different diameters may be formed. In a step to be described later, the element ROD formed by the nanopatterns 1710, 1720, and 1730 having different diameters may shift a wavelength band of emitted light according to the diameters.
Fig. 8 to 16 are sectional views schematically illustrating a method of manufacturing a light emitting element according to an embodiment.
First, referring to fig. 8 to 13, the first conductive semiconductor layer 3100, the active material layer 3300, the second conductive semiconductor layer 3200, and the conductive electrode material layer 3700 are etched in a direction perpendicular to the lower substrate layer 1000 to form the element ROD. Here, the element RODs ROD may be formed to have different diameters from each other.
The step of forming the element bar ROD by vertically etching the semiconductor structure 3000 may include a patterning process that may be conventionally performed. According to an embodiment, the step of forming the element bar ROD by etching the semiconductor structure 3000 may include a step of forming an etching mask layer 1600 and an etching pattern layer 1700 on the semiconductor structure 3000, a step of etching the semiconductor structure 3000 according to a pattern of the etching pattern layer 1700, and a step of removing the etching mask layer 1600 and the etching pattern layer 1700.
The etching mask layer 1600 may be used as a mask for sequentially etching the first conductive semiconductor layer 3100, the active material layer 3300, the second conductive semiconductor layer 3200, and the conductive electrode material layer 3700 of the semiconductor structure 3000. The etch mask layer 1600 may include a first etch mask layer 1610 including an insulating material and a second etch mask layer 1620 including a metal.
The insulating material included in the first etch mask layer 1610 of the etch mask layer 1600 may be oxide or nitride. For example, the insulating material may be silicon oxide (SiO)x) Silicon nitride (SiN)x) Or silicon oxynitride (SiO)xNy). The thickness of the first etch mask layer 1610 may be in the range of 0.5 μm to 1.5 μm, but is not limited thereto.
The material of the second etching mask layer 1620 is not particularly limited as long as it is a conventional material capable of being used as a mask for continuous etching of the semiconductor structure 3000. For example, the second etching mask layer 1620 may include chromium (Cr) or the like. The thickness of the second etching mask layer 1620 may be in a range of 30nm to 150nm, but is not limited thereto.
The etch pattern layer 1700 formed on the etch mask layer 1600 may be provided to have one or more nano- patterns 1710, 1720 and 1730 spaced apart from each other. The etch pattern layer 1700 may be used as a mask for a continuous etch of the semiconductor structure 3000. The method of forming the pattern is not particularly limited as long as it can be patterned using the etching pattern layer 1700 including polymer, polystyrene balls, silicon dioxide balls, and the like.
For example, when the etching pattern layer 1700 includes a polymer, a conventional method capable of forming a pattern using a polymer may be employed. For example, the etching pattern layer 1700 including a polymer may be formed by a method such as photolithography, electron beam lithography, or nanoimprint lithography.
In an exemplary embodiment, the etching pattern layer 1700 may be formed by nanoimprint lithography, and the nano- patterns 1710, 1720, and 1730 of the etching pattern layer 1700 may include nanoimprint resin. Examples of resins may include, but are not limited to, fluorinated monomers, acrylate monomers, dipentaerythritol hexaacrylate, dipropylene glycol diacrylate, polyethylene glycol phenyl ether acrylate, dibutyl hydroxytoluene (BHT), and 1-hydroxy-cyclohexyl phenyl ketone (Irgacure 184).
The structure, shape, and pitch of the nano- patterns 1710, 1720, and 1730 may be related to the shape of the finally manufactured light emitting element 300. However, as described above, since the light emitting element 300 may have different diameters, the sizes of the nano patterns 1710, 1720, and 1730 may be various.
In an exemplary embodiment, the diameter rn2 of the second nanopattern 1720 may be larger than the diameter rn1 of the first nanopattern 1710, but may be smaller than the diameter rn3 of the third nanopattern 1730. In other words, the first, second, and third nano- patterns 1710, 1720, and 1730 may be formed such that their diameters sequentially increase.
Specifically, as shown in fig. 8, the active material layer 3300 may have a difference in composition of its material according to its spatial position, and a strong strain is applied to the lattice of the active material when the active material layer 3300 is deposited. Therefore, the band gap energy of the active material may vary according to the position of the active material layer 3300, and the wavelength band of the emitted light may have a deviation. As shown in the drawing, the semiconductor structure 3000 including the active material layer 3300 may include any space defined by a first wavelength region WA1 in which the first light L1 is emitted, a second wavelength region WA2 in which the second light L2 is emitted, and a third wavelength region WA3 from which the third light L3 is emitted. The active material layer 3300 may have a difference in composition of the active material according to each wavelength area WA, or may have a different strain applied to a lattice of the active material.
First, second and third nano- patterns 1710, 1720 and 1730 having different diameters from each other may be formed on the first, second and third wavelength areas WA1, WA2 and WA3, respectively.
Fig. 9 is a cross-sectional view of the etch pattern layer formed on the semiconductor structure of fig. 8 as viewed from above. Fig. 9 partially shows a semiconductor structure 3000 grown on a lower base layer 3000 and an etch pattern layer 1700 formed thereon. In other words, in fig. 9, only some of the nanopatterns 1710, 1720, and 1730 included in the etching pattern layer 1700 are shown, and it is apparent that a greater number of the nanopatterns 1710, 1720, and 1730 may be formed on the semiconductor structure 3000.
As shown in fig. 9, a central portion of the semiconductor structure 3000 may be defined as a third wavelength region WA3, and the second wavelength region WA2 and the first wavelength region WA1 may be defined to surround the third wavelength region WA 3. The third nano-pattern 1730 may be formed on the third wavelength region WA3, the second nano-pattern 1720 may be formed on the second wavelength region WA2, and the first nano-pattern 1710 may be formed on the first wavelength region WA 1. In fig. 9, wavelength regions in which light of different wavelength bands is emitted may be defined as it travels outward based on the center of the semiconductor structure 3000. The light emitted from the second wavelength region WA2 may have a wavelength shorter than that of the light emitted from the first wavelength region WA1, and may have a wavelength longer than that of the light emitted from the third wavelength region WA 3. In other words, the wavelength band of emitted light may increase from the center to the outside of the semiconductor structure 3000.
At least one first nanopattern 1710, at least one second nanopattern 1720, and at least one third nanopattern 1730 may be disposed in the wavelength region, respectively, and the nanopatterns may be disposed to be spaced apart from each other. A space or structure in which the plurality of nano- patterns 1710, 1720, and 1730 are spaced apart from each other is not particularly limited. In fig. 8, a plurality of nanopatterns 1710, 1720, and 1730 may be arranged such that other nanopatterns surround any one nanopattern. Here, six other nanopatterns are arranged to surround the outer surface of one central nanopattern, and the six nanopatterns may be divided and arranged at regular intervals. In other words, the region formed by the plurality of nano-patterns may have a regular hexagonal shape. However, the present invention is not limited thereto, and the region formed of the plurality of nano-patterns may have a circular shape, a polygonal shape, or the like.
The pitch between the plurality of nano- patterns 1710, 1720, and 1730 is not particularly limited. For example, a pitch between the plurality of nano- patterns 1710, 1720, and 1730 may be larger than a diameter of each of the nano- patterns 1710, 1720, and 1730. In an exemplary embodiment, a pitch between the plurality of nano- patterns 1710, 1720, and 1730 may be two to four times or three times a diameter of each of the nano- patterns 1710, 1720, and 1730. The structure of each of the nanopatterns 1710, 1720, and 1730 and the pitch between the nanopatterns 1710, 1720, and 1730 are not particularly limited. For example, when the nanopatterns 1710, 1720, and 1730 have polygonal shapes in which they are spaced apart from each other, the light emitting element 300 manufactured by vertically etching the semiconductor structure 3000 may have a shape of a polygonal column. However, the present invention is not limited thereto.
In addition, as described above, the first, second, and third nano- patterns 1710, 1720, and 1730 may have different diameters from each other. For example, among light emitting elements manufactured by the semiconductor structure 3000, based on the second light emitting element 302 manufactured to have the diameter of the second nanopattern 1720 on the second wavelength region WA2 emitting the second light L2, nanopatterns of different diameters may be formed according to a difference from wavelength bands of light emitted from the first wavelength region WA1 emitting the first light L1 and light emitted from the third wavelength region WA3 emitting the third light L3. That is, the first and third nano- patterns 1710 and 1730 may have a diameter different from that of the second nano-pattern 1720.
In an exemplary embodiment, a diameter rn1 of the first nano-pattern 1710 formed on the first wavelength region WA1 emitting the first light L1 having a wavelength longer than that of the second light L2 may be smaller than a diameter rn2 of the second nano-pattern 1720, and a diameter rn3 of the third nano-pattern 1730 formed on the third wavelength region WA3 emitting the third light L3 having a wavelength shorter than that of the second light L2 may be larger than a diameter rn2 of the second nano-pattern 1720. In other words, the diameters of the nanopatterns 1710, 1720, and 1730 formed on the semiconductor structure 3000 may decrease from the center to the outside of the semiconductor structure 3000. In addition, the diameters of the nanopatterns 1710, 1720, and 1730 may increase in a uniaxial direction passing through the center of the semiconductor structure 3000 and then decrease after passing through the center of the semiconductor structure 3000. In other words, the diameters of the nanopatterns 1710, 1720, and 1730 may increase from one end of one axis passing through the center of the semiconductor structure 3000 to the center of the semiconductor structure 3000, but the diameters of the nanopatterns 1710, 1720, and 1730 may decrease from the center of the semiconductor structure 3000 to the other end of the one axis.
However, the present invention is not limited thereto. In the drawings, the first, second, and third nano- patterns 1710, 1720, and 1730 having different diameters from each other are illustrated, but the present invention is not limited thereto and a larger number of nano-patterns may be included. That is, when the active material layer 3300 includes a greater number of regions emitting light of different wavelength bands, a greater number of nanopatterns may be formed.
Therefore, the element RODs ROD manufactured in a step to be described later may have different diameters from each other. The element RODs ROD formed in the first, second, and third wavelength regions WA1, WA2, and WA3 may have diameters different from one another according to diameters of the first, second, and third nano- patterns 1710, 1720, and 1730, and may include an active material layer 3300 having components different from one another.
In the element bar ROD formed by etching the semiconductor structure 3000 in a direction perpendicular to the lower base layer 1000, different lattice strains are respectively applied to the active material layers 3300. In the element ROD including the active material layers 3300 having different compositions from each other, the active materials have different lattice strains according to the diameter of the element ROD, and the wavelength bands of the emitted light (for example, the first light L1 and the third light L3) may be shifted. In other words, the diameters of the nanopatterns 1710, 1720, and 1730 may be adjusted so that the wavelength of the emitted light may be shifted according to the wavelength band of the wavelength region WA.
Accordingly, the finally manufactured light emitting element, for example, the first light emitting element 301 manufactured in the first wavelength region WA1 through the first nano pattern 1710 may emit the second light L2 due to blue shift of light emitted from the element active layer 330, and the third light emitting element 303 manufactured in the third wavelength region WA3 through the third nano pattern 1730 may emit the second light L2 due to red shift of light emitted from the element active layer 330.
Next, as shown in fig. 10 to 13, the semiconductor structure 3000 is etched according to the nano- patterns 1710, 1720, and 1730 of the etching pattern layer 1700 to form the element bar ROD. The step of forming the element ROD may include: a first etching step of vertically etching a region of the etching pattern layer 1700 in which the plurality of nano- patterns 1710, 1720 and 1730 are spaced apart from each other to pattern the etching mask layer 1600 and the conductive electrode material layer 3700 to form first holes h 1; a step of removing the etching pattern layer 1700; a second etching step of patterning the second conductive semiconductor layer 3200, the active material layer 3300 and the first conductive semiconductor layer 3100 along the first hole h1 to form a second hole h 2; and a step of removing the etching mask layer 1600.
The step of forming the first hole h1 and the step of forming the second hole h2 may be performed by a general etching method. For example, as the etching method, dry etching, wet etching, Reactive Ion Etching (RIE), inductively coupled plasma reactive ion etching (ICP-RIE) may be used. In the case of dry etching, anisotropic etching is possible, so it may be suitable to form the hole h by vertical etching. When the above etching method is used, the etchant may be Cl2Or O2. However, the present invention is not limited thereto.
In some embodiments, the semiconductor structure 3000 may be etched by a combination of dry and wet etching. For example, first, etching in the depth direction may be performed, and then the etched sidewall may be placed on a plane perpendicular to the surface by wet etching which is isotropic etching.
Then, the etching mask layer 1600 or the etching pattern layer 1700 remaining on the vertically etched semiconductor structure 3000 may be removed to form the element bar ROD. The etching mask layer 1600 or the etching pattern layer 1700 may be removed by a general method (e.g., dry etching or wet etching).
As described above, according to the nanopatterns 1710, 1720, and 1730 having different diameters from each other in the etching pattern layer 1700, the element RODs ROD may be formed to have different diameters from each other, but light emitted from the element RODs ROD may have substantially the same wavelength band.
In addition, in the step of forming the element bar ROD by etching the semiconductor structure 3000, patterning processes different from each other may be performed in addition to the first etching step and the second etching step, and one patterning process may be performed to pattern the first conductive semiconductor layer 3100 along the etching pattern layer 1700. However, the present invention is not limited thereto.
Next, referring to fig. 14 to 16, an insulating film 3800 partially surrounding an outer side surface of the element ROD is formed and the element ROD is separated from the lower base layer 1000 to manufacture the light emitting element 300.
First, referring to fig. 14 and 15, the insulating film 3800 may be formed using a method of coating or dipping an insulating material on an outer surface of the vertically etched element ROD, but the present invention is not limited thereto. The insulating film 3800 can be formed by Atomic Layer Deposition (ALD), for example. The insulating film 3800 may form the insulating layer 380 of the light emitting element 300. As described above, the insulating film 3800 may include silicon oxide (SiO)x) Silicon nitride (SiN)x) Silicon oxynitride (SiO)xNy) Alumina (Al)2O3) Or aluminum nitride (AlN).
Referring to fig. 14, an insulating film 3800 may be formed on the side surface and the upper surface of the element ROD spaced apart from each other, and thus may be formed even on the buffer material layer 1200 exposed to the outside. In order to expose both end side surfaces of the element ROD, it is necessary to remove the insulating film 3800 formed on the upper surface of the element ROD. Accordingly, the insulating film 3800 formed in a direction perpendicular to the length direction of the element ROD (ROD) ROD (ROD) (i.e., in a direction parallel to the base substrate 1100) can be partially removed. That is, as shown in fig. 15, at least the insulating film 3800 provided on the upper surface of the element ROD and the buffer material layer 1200 may be removed to expose the upper surface of the element ROD. For this purpose, a process such as dry etching or etch back may be performed as anisotropic etching.
Finally, as shown in fig. 16, the element RODs ROD grown on the lower substrate layer 1000 are separated from the lower substrate layer 1000, thereby manufacturing the light emitting element 300.
In the step of separating the element ROD, the separation method is not particularly limited as long as it can be commonly performed, such as a physical separation method (mechanical lift-off (MLO) or a chemical separation method (chemical lift-off (CLO)). however, according to some embodiments, in the method of manufacturing the light emitting element 300, the separation layer 1300 may also be provided between the buffer material layer 1200 and the first conductive semiconductor layer 3100, and the separation layer 1300 may be removed by the chemical separation method (CLO) in the step of separating the element ROD, in order to remove the separation layer 1300, a wet etching process may be performed using a separation etchant such as hydrofluoric acid (HF) or a Buffered Oxide Etchant (BOE), but the present invention is not limited thereto. The plurality of light emitting elements 300 may ensure uniformity of the end surface.
As shown in fig. 16, the plurality of light emitting elements 300 may include a first light emitting element 301, a second light emitting element 302, and a third light emitting element 303 having different diameters from each other. The light emitting element 300 includes the element active layers 330 having different compositions from each other and having different diameters from each other, and thus can emit light having the same wavelength band by frequency-shifting the wavelength of the emitted light.
Although fig. 16 shows only the first, second, and third light emitting elements 301, 302, and 303 having diameters different from each other, the present invention is not limited thereto. In some cases, a larger number of light emitting elements 300 having a diameter different from that of any one of the light emitting elements 300 may be included, and when there are fewer divided regions due to differences in composition formed on the active material layer 3300, only two kinds of light emitting elements 300 having diameters different from each other may be included.
As described above, in the method of manufacturing the light emitting element 300 according to the embodiment, the light emitting element can be manufactured: there are differences in composition between the element active layers 330, but have diameters different from each other to emit light of substantially the same wavelength band. These light emitting elements 300 can be manufactured by forming the etching pattern layers 1700 having different sizes from each other in the step of vertically etching the semiconductor structure 3000 to form the element bar ROD. Since the light emitting elements 300 according to the embodiment are manufactured to have different diameters from each other, it is possible to compensate for a difference in emission wavelength that may occur according to a difference in composition of the element active layer 330, and the display device 10 including the light emitting elements 300 can minimize a deviation in emission wavelength between the light emitting elements 300 in each pixel PX and improve color purity and light emission reliability of each pixel PX.
In addition, in the step of forming the element bar ROD, the shape or arrangement of the etching pattern layer 1700 on the cross section thereof may be various. The shape or arrangement of the etch pattern layer 1700 may vary according to the dividing regions formed due to the difference in composition of the semiconductor structure 3000 formed on the lower base layer 1000. Hereinafter, the shape of the etching pattern layer 1700 according to other embodiments will be described with reference to fig. 17 to 19.
Fig. 17 is a schematic view showing a sectional shape of an etching pattern layer formed on a semiconductor structure when viewed from above in a method of manufacturing a light emitting element according to another embodiment.
The wavelength region WA defined on the semiconductor structure 3000 is shown in fig. 9 as varying from the center of the semiconductor structure 3000 to the outside. In this case, the nanopatterns 1710, 1720, and 1730 of the etching pattern layer 1700 may have different diameters from the center to the outside of the semiconductor structure 3000.
In contrast, it is shown in fig. 17 that the wavelength area WA defined on the semiconductor structure 3000 changes from one side of the semiconductor structure 3000 to the other side of the semiconductor structure 3000. In this case, the nanopatterns 1710_1, 1720_1, and 1730_1 of the etching pattern layer 1700 may have different diameters from one side of the semiconductor structure 3000 to the other side of the semiconductor structure 3000.
As described above, when the semiconductor structure 3000 is formed by depositing a precursor material on the lower base layer 1000, the distribution of the precursor material disposed on the lower base layer 1000 may be uneven. The arrangement of the wavelength region WA defined on the active material layer 3300 of the semiconductor structure 3000 may vary depending on the uniformity of the distribution of the precursor material.
In fig. 17, the first wavelength region WA1 is formed on one side of the semiconductor structure 3000, and the second wavelength region WA2 and the third wavelength region WA3 are sequentially formed toward the other side of the semiconductor structure 3000 which is the opposite side of the one side of the semiconductor structure 3000. Accordingly, the arrangement of the nano-patterns 1710_1, 1720_1, and 1730_1 formed on the semiconductor structure 3000 may also be changed.
The first nano-pattern 1710_1 may be formed on the first wavelength area WA1, the second nano-pattern 1720_1 may be formed on the second wavelength area WA2, and the third nano-pattern 1730_1 may be formed on the third wavelength area WA 3. Accordingly, the diameters of the nanopatterns 1710_1, 1720_1, and 1730_1 may increase from one side to the other side based on one axial direction passing through the center of the semiconductor structure 3000. In other words, the diameters of the nanopatterns 1710_1, 1720_1, and 1730_1 may increase from one end of one axis passing through the center of the semiconductor structure 3000 to the other end thereof. However, the present invention is not limited thereto, and vice versa. The shape, arrangement structure, diameter, and the like of the nanopatterns 1710, 1720, and 1730 may vary according to the wavelength area WA defined on the semiconductor structure 3000.
Fig. 18 and 19 are schematic views showing a sectional shape of an etching pattern layer in a method of manufacturing a light emitting element according to another embodiment.
Referring to fig. 18 and 19, as described above, the nanopatterns 1710, 1720, and 1730 of the etching pattern layer 1700 do not necessarily have a circular shape, but may have a polygonal shape. The nano-patterns 1710_2, 1720_2, and 1730_2 are shown in fig. 18 to have a triangular shape, and the nano-patterns 1710_3, 1720_3, and 1730_3 are shown in fig. 19 to have a diamond shape or a rectangular shape. However, the present invention is not limited thereto.
The light emitting element 300 manufactured according to the nano- patterns 1710, 1720, and 1730 of fig. 18 and 19 may have a polygonal pillar shape. The light emitting element 300 may be aligned between the first electrode 210 and the second electrode 220 of the display device 10, and both ends of the light emitting element 300 may be in contact with the contact electrodes 261 and 262. Therefore, the light emitting element 300 may have various shapes within a range that does not cause adhesive failure when the light emitting element 300 contacts the contact electrodes 261 and 262.
In addition, as described above, in some embodiments, a plurality of layers may be formed on the buffer material layer 1200, and the separation layer 1300 may be disposed thereon. Fig. 20 and 21 are sectional views illustrating some processes of a method of manufacturing a light emitting element according to another embodiment.
Referring to fig. 20 and 21, a separation layer 1300 may also be provided on the lower base layer 1000. The separation layer 1300 may have a first conductive semiconductor layer 3100 formed thereon. That is, the separation layer 1300 may be interposed between the first conductive semiconductor layer 3100 and the buffer material layer 1200, and the separation layer 1300 may include a material that grows a crystal of the first conductive semiconductor layer 3100. The separation layer 1300 may include at least one of an insulating material and a conductive material. For example, the separation layer 1300 may include silicon oxide (SiO)x) Silicon nitride (SiN)x) Or silicon oxynitride (SiO)xNy) As an insulating material, and ITO, IZO, IGO, ZnO, graphene, or graphene oxide may be included as a conductive material. However, the present invention is not limited thereto.
The separation layer 1300 may be etched and removed in a step to be described later, thereby separating the light emitting element 300 from the lower substrate layer 1000. The step of removing the separation layer 1300 may be performed by a chemical separation method (CLO) as described above, and thus, the end surface of the light emitting element 300 may have substantially the same shape as the shape of the surface of the separation layer 1300. That is, the end surface of the light emitting element 300 may have a flat surface.
Further, in the process of etching the semiconductor structure 3000, the separation layer 1300 may serve as an etch stop between the semiconductor structure 3000 and the buffer material layer 1200. That is, when the semiconductor structure 3000 is etched, the separation layer 1300 may be patterned simultaneously in one process, or the separation layer 1300 may be patterned separately in another process. The method of manufacturing the light emitting element 300 is not particularly limited thereto.
However, the present invention is not limited thereto. A larger number of separation layers 1300 may be arranged in the semiconductor structure 3000 or the lower base layer 1000, and the separation layers 1300 may be provided in regions other than the interface between the buffer material layer 1200 and the first conductive semiconductor layer 1300.
At the end of the detailed description, those skilled in the art will appreciate that many variations and modifications can be made to the preferred embodiments without materially departing from the principles of the invention. Accordingly, the disclosed preferred embodiments of the invention are used in a generic and descriptive sense only and not for purposes of limitation.

Claims (20)

1. A method of manufacturing a light emitting element, the method comprising:
providing a semiconductor structure formed on a substrate;
measuring light having wavelength bands different from each other emitted from the semiconductor structure to define a wavelength region; and
nano-patterns having different diameters from each other and spaced apart from each other are formed on the semiconductor structure, and the semiconductor structure is etched to form an element bar.
2. The method of claim 1, wherein the wavelength region comprises:
a first wavelength region from which first light having a first wavelength band is emitted;
a second wavelength region from which second light having a second wavelength band shorter than the first wavelength band is emitted; and
a third wavelength region from which third light having a third wavelength band shorter than the second wavelength band is emitted.
3. The method of claim 2, wherein the first and second light sources are selected from the group consisting of,
wherein, in the step of forming the nano-pattern, the nano-pattern having an increased diameter is formed on the wavelength region as a wavelength band of light emitted from the wavelength region decreases.
4. The method of claim 3, wherein the first and second light sources are selected from the group consisting of,
wherein the nano-pattern includes a first nano-pattern, a second nano-pattern having a diameter larger than that of the first nano-pattern, and a third nano-pattern having a diameter larger than that of the second nano-pattern, and
the first nano-pattern is formed on the first wavelength region, the second nano-pattern is formed on the second wavelength region, and the third nano-pattern is formed on the third wavelength region.
5. The method of claim 4, wherein the element rod comprises:
a first element rod formed in a region overlapping the first wavelength region;
a second element rod formed in a region overlapping with the second wavelength region; and
a third element rod formed in a region overlapping the third wavelength region.
6. The method of claim 5, wherein the first and second light sources are selected from the group consisting of,
wherein the second element rod is larger in diameter than the first element rod but smaller in diameter than the third element rod, and
the first, second, and third element rods emit light in substantially the same wavelength band.
7. The method of claim 4, wherein the first and second light sources are selected from the group consisting of,
wherein the third wavelength region is disposed at a center of the semiconductor structure, the second wavelength region is disposed to surround an outer surface of the third wavelength region, and
the first wavelength region is disposed to surround an outer surface of the second wavelength region.
8. The method of claim 7, wherein the first and second light sources are selected from the group consisting of,
wherein the semiconductor structure comprises a first axis passing through the center of the semiconductor structure,
the diameter of the nanopattern increases from an end of the first axis toward the center of the semiconductor structure, and
the diameter of the nanopattern decreases from the center of the semiconductor structure toward the other end of the first axis.
9. The method of claim 4, wherein the first and second light sources are selected from the group consisting of,
wherein the semiconductor structure includes a second axis passing through a center of the semiconductor structure,
the first wavelength region is disposed at one end of the second shaft,
the second wavelength region partially surrounds an outer surface of the first wavelength region and extends in a direction of the other end of the second shaft, and
the third wavelength region partially surrounds an outer surface of the second wavelength region and extends to the other end of the second shaft.
10. The method of claim 9, wherein the first and second light sources are selected from the group consisting of,
wherein the diameter of the at least one nanopattern disposed along the second axis increases from the one end of the second axis toward the other end of the second axis.
11. A method of manufacturing a light emitting element, the method comprising:
providing a substrate and a semiconductor structure disposed on the substrate and including a first conductive semiconductor layer, an active material layer, and a second conductive semiconductor layer;
forming an etching mask layer formed on the semiconductor structure and an etching pattern layer including one or more nano-patterns formed on the etching mask layer, having different diameters from each other, and spaced apart from each other;
etching the semiconductor structure in a direction perpendicular to the substrate along regions where the nanopatterns are spaced apart from each other to form element bars; and
separating the element bar from the substrate to form a light emitting element.
12. The method of claim 11, wherein the nanopattern comprises:
a first nanopattern;
a second nano pattern having a diameter larger than that of the first nano pattern; and
a third nano pattern having a diameter larger than that of the second nano pattern.
13. The method of claim 12, wherein the light emitting element comprises:
a first light emitting element having a diameter equal to the diameter of the first nano pattern;
a second light emitting element having a diameter equal to the diameter of the second nano pattern; and
a third light emitting element having a diameter equal to the diameter of the third nano-pattern.
14. The method of claim 13, wherein the first and second light sources are selected from the group consisting of,
wherein a difference in diameter between the first light emitting element and the second light emitting element is in a range of 2% to 16% of the diameter of the second light emitting element.
15. The method of claim 14, wherein the first and second light sources are selected from the group consisting of,
wherein a pitch between the one or more nanopatterns spaced apart from each other is in a range of 2.5 to 3.5 times the diameter of each of the nanopatterns.
16. The method of claim 15, wherein the first and second light sources are selected from the group consisting of,
wherein the nano pattern has a circular shape or a polygonal shape.
17. The method of claim 11, wherein the first and second light sources are selected from the group consisting of,
wherein a separation layer is further provided between the substrate and the first conductive semiconductor layer, and
the step of forming the light-emitting element includes a step of removing the separation layer to separate the element bar from the substrate.
18. A display device, the display device comprising:
a substrate;
at least one first electrode and at least one second electrode extending in a first direction on the substrate and spaced apart from each other in a second direction different from the first direction;
at least one light emitting element disposed in a space between the first electrode and the second electrode;
a first contact electrode partially covering the first electrode and contacting a first end of the light emitting element; and
a second contact electrode partially covering the second electrode and contacting a second end of the light emitting element, the second end of the light emitting element being positioned opposite to the first end of the light emitting element,
wherein the light emitting element includes a first light emitting element and a second light emitting element having a diameter larger than that of the first light emitting element, and
the first light emitting element and the second light emitting element emit light of substantially the same wavelength band.
19. The display device according to claim 18, wherein the first and second light sources are arranged in a matrix,
wherein a difference in diameter between the first light emitting element and the second light emitting element is in a range of 2% to 16% of the diameter of the second light emitting element.
20. The display device according to claim 19, wherein,
wherein the light emitting element further includes a third light emitting element, and
the third light emitting element has a diameter larger than that of the second light emitting element and emits light of substantially the same wavelength band as the second light emitting element.
CN201980060103.8A 2018-09-13 2019-04-23 Method for manufacturing light emitting element and display device including light emitting element Pending CN112689903A (en)

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