CN112689888A - Method for manufacturing semiconductor device, substrate processing apparatus, and program - Google Patents
Method for manufacturing semiconductor device, substrate processing apparatus, and program Download PDFInfo
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- CN112689888A CN112689888A CN201980057965.5A CN201980057965A CN112689888A CN 112689888 A CN112689888 A CN 112689888A CN 201980057965 A CN201980057965 A CN 201980057965A CN 112689888 A CN112689888 A CN 112689888A
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- 239000000758 substrate Substances 0.000 title claims abstract description 122
- 238000000034 method Methods 0.000 title claims abstract description 72
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000007789 gas Substances 0.000 claims abstract description 544
- 239000012495 reaction gas Substances 0.000 claims abstract description 72
- 239000011261 inert gas Substances 0.000 claims abstract description 43
- 239000002994 raw material Substances 0.000 claims description 31
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 30
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 4
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
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- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Abstract
The present invention provides a technique comprising: a first gas supply step of supplying a source gas to a substrate accommodated in a processing chamber; and a second gas supply step of supplying a reaction gas to the substrate, wherein the first gas supply step and the second gas supply step are alternately performed to form a film on the substrate, and in the second gas supply step, the reaction gas is supplied to the substrate from a reaction gas supply system that supplies the reaction gas, and an inert gas is supplied to the substrate from a supply system different from the reaction gas supply system so that the reaction gas easily reaches the center of the substrate.
Description
Technical Field
The present invention relates to a method for manufacturing a semiconductor device, a substrate processing apparatus, and a program.
Background
Substrate processing apparatuses and methods for manufacturing semiconductor devices have been developed in the past, in which thin films are formed on substrates such as silicon wafers to manufacture semiconductor devices.
For example, a method of manufacturing a semiconductor device is known: a film is formed on a substrate accommodated in a processing chamber by sequentially supplying a raw material gas and a reaction gas that reacts with the raw material gas into the processing chamber accommodating the substrate (see, for example, patent document 1).
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2014-127702
Disclosure of Invention
Problems to be solved by the invention
As disclosed in patent document 1, when a film is formed on a substrate accommodated in a processing chamber by sequentially supplying a raw material gas and a reaction gas that reacts with the raw material gas into the processing chamber, it is required to improve in-plane uniformity of the film formed on the substrate.
The invention aims to provide the following technology: when a film is formed on the surface of a substrate by alternately supplying a raw material gas and a reaction gas to the substrate accommodated in a processing chamber, the in-plane uniformity of the film is improved.
Means for solving the problems
The specific means for solving the above problems are as follows.
According to an aspect of the present invention, there is provided a technique including:
a first gas supply step of supplying a source gas to a substrate accommodated in a processing chamber; and
a second gas supply step of supplying a reaction gas to the substrate,
and a second gas supply step of supplying the reaction gas to the substrate from a reaction gas supply system that supplies the reaction gas, and supplying an inert gas to the substrate from a supply system different from the reaction gas supply system so that the reaction gas easily reaches a center portion of the substrate.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, the following technique can be provided: when a film is formed on the surface of a substrate by alternately supplying a raw material gas and a reaction gas to the substrate housed in a processing chamber, the in-plane uniformity of the film can be improved.
Drawings
Fig. 1 is a vertical sectional view schematically showing a vertical processing furnace of a substrate processing apparatus according to a first embodiment.
Fig. 2 is a schematic cross-sectional view taken along line a-a in fig. 1.
Fig. 3 is a schematic configuration diagram of a controller of the substrate processing apparatus according to the first embodiment, and is a diagram showing a control system of the controller in a block diagram.
Fig. 4 is a diagram showing an in-plane distribution of film thickness in the case where the amount of nitrogen gas supplied is excessive with respect to the amount of ozone gas supplied in the second gas supply step.
Fig. 5 is a diagram showing an in-plane distribution of film thickness in the case where the amount of nitrogen gas supplied is too small with respect to the amount of ozone gas supplied in the second gas supply step.
Fig. 6 is a diagram showing an in-plane distribution of film thickness when the amount of nitrogen gas supplied is changed with respect to the amount of ozone gas supplied in the second gas supply step.
Fig. 7 is a schematic cross-sectional view showing the arrangement of nozzles for supplying gas in the vertical processing furnace of the substrate processing apparatus according to the second embodiment.
Fig. 8 is a schematic cross-sectional view showing the arrangement of nozzles for supplying gas in the vertical processing furnace of the substrate processing apparatus according to the third embodiment.
Fig. 9 is a schematic cross-sectional view showing the arrangement of nozzles for supplying gas in the vertical processing furnace of the substrate processing apparatus according to the fourth embodiment.
Fig. 10 is a schematic cross-sectional view showing the arrangement of nozzles for supplying gas in the vertical processing furnace of the substrate processing apparatus according to the modification of the third embodiment.
Detailed Description
Embodiments of the present invention will be described below with reference to the drawings.
In the present specification, the numerical range represented by "to" means a range including the numerical values before and after "to", that is, the lower limit value and the upper limit value. For example, 10sccm to 500sccm means 10sccm to 500 sccm. Not only the flow rate, but also all the numerical ranges described in this specification, such as pressure, time, and temperature, are the same.
The term "step" in the present specification means not only an independent step but also a step that can achieve the intended purpose of the step even when it is not clearly distinguished from other steps.
In the case where a film is formed on a substrate by alternately supplying a raw material gas and a reaction gas that reacts with the raw material gas to the substrate, if a substrate processing apparatus that supports a plurality of substrates on a substrate support member and accommodates the substrates in a processing chamber, for example, is used, the substrate processing apparatus is provided with a long nozzle that extends from a lower region to an upper region of the processing chamber along an arrangement direction of the substrates, and the long nozzle is opened with a plurality of gas supply holes for ejecting gas to each substrate.
However, trimethylaluminum (Al (CH) is supplied as the source gas3)3Hereinafter, may be abbreviated as "TMA") and ozone (O) is supplied as a reaction gas3) Therefore, when an AlO film (AlO layer) is formed on the surface of the wafer, ozone is easily deactivated, and ozone is easily deactivated between 4 to 6 × 10 from an inlet (inlet) of the gas supply pipe to the wafer center－2During sec, the concentration is reduced to 1/30-1/100. As a result, the in-plane uniformity of the film thickness is reduced.
In addition, in recent years, with the miniaturization of semiconductor devices, a pattern is formed on a wafer surface and the surface area is larger than that of a bare wafer, and as a result, in-plane uniformity of film thickness is reduced.
In order to improve the in-plane uniformity of the film thickness, the inventors of the present invention have intensively studied and found that: even if the supply time of the TMA gas is prolonged, the in-plane uniformity of the film cannot be sufficiently improved. On the other hand, when O is elongated3When the gas is supplied for a time, the film thickness becomes concave as it approaches the center of the wafer, and the in-plane uniformity of the film is reduced. CH is generated due to the supply of TMA gas3By-products, and due to the supply of O3Gas will generate N2O、CO2、CH4、CH3Various by-products, such as CH3Or CO2Adhere to the wafer surface earlier than O, and prevent film formation.
In this regard, the inventors of the present invention have found, through repeated studies: by supplying O into the processing furnace3Additional supply of N in the case of gas2Gas, thereby reducing the concentration of by-products. By adding N can be considered2The gas reduces the rate of reattachment of by-products to the substrate. Furthermore, the present inventors found that: in the supply of O3When gas, so that O3The gas easily reaches the wafer from O3A gas pipe other than the gas pipe supplies N to the wafer2Gas, and relative to O3Adjusting N by the amount of gas supplied2The gas supply amount can adjust the thickness distribution of the film formed on the wafer, and the in-plane uniformity is improved. For this reason, O is supplied3Supplying N to the wafer while the gas is being supplied2Gas, thereby making O3The flow velocity of the gas is increased, and the O near the center of the wafer can be increased3Flow rate of gas, or inhibition of O3The gas diffuses to the region outside the wafer to make O3The gas is efficiently supplied to the vicinity of the center of the wafer. Therefore, it can be suppressed to O3Front cause O of reaching the center of the wafer3To result in O3The concentration is reduced, and it is also conceivable to use N2The gas removes the byproduct TMA adsorbed on the wafer surface, and promotes the utilization of O3The oxidation is performed, thereby improving the film thickness uniformity. That is, in order to improve the in-plane uniformity, it is considered that the ozone gas easily reaches the vicinity of the center of the wafer by increasing the flow rate of the ozone gas, which is important.
The method for manufacturing a semiconductor device of the present embodiment includes: and a second gas supply step of supplying a reaction gas to the substrate, wherein the first gas supply step and the second gas supply step are alternately performed to form a film on the substrate, and in the second gas supply step, the reaction gas is supplied into the processing chamber and an inert gas is supplied to the substrate so that the reaction gas easily reaches the substrate.
Here, in the second gas supply step, "supplying the reaction gas into the processing chamber and supplying the inert gas to the substrate so that the reaction gas easily reaches the substrate" means: supplying an inert gas to the substrate so that the reaction gas supplied into the processing chamber reaches the substrate in a shorter time than when the reaction gas is supplied into the processing chamber alone; or supplying an inert gas to the substrate in such a manner that diffusion of the reaction gas before reaching the substrate can be suppressed.
For example, the following methods can be mentioned: a method of increasing the flow rate of the reaction gas by supplying the reaction gas and the inert gas to the center of the substrate from the adjacent gas supply holes, respectively; and a method of supplying an inert gas to the substrate so that at least one side (preferably both sides) of the flow of the reaction gas from the gas supply hole toward the vicinity of the substrate is blocked by the flow of the inert gas to promote the flow of the reaction gas to the vicinity of the center of the substrate.
In the method for manufacturing a semiconductor device according to the present embodiment, a film is formed on a substrate by performing a cycle in which the first gas supply step and the second gas supply step are sequentially performed once or repeatedly performed a plurality of times, but the film thickness distribution may be adjusted by adjusting the supply amount of the inert gas with respect to the supply amount of the reaction gas in the second gas supply step; the film thickness distribution may be adjusted by adjusting the supply amount of the inert gas with respect to the supply amount of the reaction gas at each cycle while keeping the supply amount of the inert gas constant with respect to the supply amount of the reaction gas in the second gas supply step; the film thickness distribution may be adjusted by adjusting the supply amount of the inert gas with respect to the supply amount of the reaction gas in combination of these, that is, in correspondence with each cycle and each second gas supply step.
In the following description, a case of using a substrate processing apparatus of a batch type vertical apparatus that performs film formation processing or the like on a plurality of substrates at a time will be described. However, the present invention is not limited to the use of a batch-type vertical apparatus, and a substrate processing apparatus that is a single-wafer-type apparatus that performs film formation processing on one or a plurality of substrates at a time may be used.
In the present specification, the term "wafer" includes: it refers only to the wafer itself, or a laminate of the wafer and a predetermined layer or film formed on the surface thereof. In the present specification, the term "surface of wafer" includes: refers to the surface of the wafer itself, the surface of a predetermined layer formed on the wafer, or the like. In the present specification, the meaning of "forming a predetermined layer on a wafer" includes: a predetermined layer is formed directly on the surface of the wafer itself, on a layer formed on the wafer, or the like. In the present specification, the term "substrate" has the same meaning as the term "wafer".
< first embodiment >
A first embodiment of the present invention will be described below with reference to fig. 1 to 3.
The substrate processing apparatus 100 shown in fig. 1 is an example of an apparatus used in the manufacturing process of the semiconductor device (device) according to the present embodiment. The substrate processing apparatus 100 includes: a process chamber 201 for accommodating the wafer 200, a gas supply pipe 310 and a gas supply hole 410a as a first gas supply part for supplying a raw material gas or an inert gas into the process chamber 201, a gas supply pipe 320 and a gas supply hole 420a as a second gas supply part for supplying an ozone gas as a reaction gas into the process chamber 201, and a controller 280, wherein the controller 280 is configured as a control part capable of controlling the kind of gas supplied from each of the gas supply holes 410a and 420a, the gas supply amount (gas flow rate), the gas supply time, and the like.
(treatment furnace)
The processing furnace 202 is disposed vertically with its center line perpendicular to the vertical direction, and includes a vertical processing tube 205 as a reaction tube fixedly supported by a frame.
The process pipe 205 includes an inner pipe 204 and an outer pipe 203. The inner tube 204 and the outer tube 203 are made of quartz (SiO) respectively2) And a highly heat-resistant material such as silicon carbide (SiC) are integrally formed in a cylindrical shape.
The inner tube 204 is formed in a cylindrical shape with a closed upper end and an open lower end. In the inner tube 204, a processing chamber 201 is formed for storing and processing wafers 200, and the wafers 200 are held in a plurality of stages in a horizontal posture at intervals by a boat 217 serving as a substrate holder. The lower end opening of the inner tube 204 constitutes a furnace opening through which a boat 217 holding a group of wafers 200 is moved. Therefore, the inner diameter of the inner tube 204 is set to be larger than the maximum outer diameter of the wafer boat 217 holding the group of wafers 200.
The outer tube 203 has a substantially similar shape to the inner tube 204, the outer tube 203 has a larger inner diameter than the inner tube 204, the outer tube 203 has a cylindrical shape with a closed upper end and an open lower end, and the inner tube 204 is concentrically wrapped around the outer side of the inner tube 204.
Lower end portions between the inner pipe 204 and the outer pipe 203 are hermetically sealed and fixed by headers 209 formed in a circular ring shape, respectively. The header 209 is detachably attached to the inner pipe 204 and the outer pipe 203 in order to perform maintenance work or cleaning work on the inner pipe 204 and the outer pipe 203. The manifold 209 is supported by the frame body, and the process tube 205 is vertically fixed.
(exhaust unit)
An exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201 is connected to a part of the side wall of the manifold 209. An exhaust port for exhausting the ambient gas in the processing chamber 201 is formed at a connection portion between the exhaust pipe 231 and the manifold 209.
The exhaust pipe 231 communicates with the inside of the exhaust passage 206 via an exhaust port, and the exhaust passage 206 is formed by a gap formed between the inner pipe 204 and the outer pipe 203. The cross-sectional shape of the exhaust passage 206 is a ring shape. The exhaust pipe 231 is provided with, in order from the upstream: a Pressure sensor 245, an APC (automatic Pressure Controller) valve 231a as a Pressure adjusting valve, and a vacuum pump 231c as a vacuum exhaust device.
The vacuum pump 231c is configured to be able to perform vacuum evacuation so that the pressure in the processing chamber 201 becomes a predetermined pressure (vacuum degree).
The APC valve 231a and the pressure sensor 245 are electrically connected to a control section (controller) 280. The control unit 280 is configured to control the opening degree of the APC valve 231a based on the pressure detected by the pressure sensor 245 so that the pressure in the processing chamber 201 becomes a desired pressure at a desired timing.
Mainly, the exhaust pipe 231, the pressure sensor 245, and the APC valve 231a constitute an exhaust unit (exhaust system) of the present embodiment. The vacuum pump 231c may be included in the exhaust unit.
A seal cap 219 that closes the lower end opening of the header 209 can abut against the header 209 from the vertically lower side. The sealing cap 219 is formed in a disk shape having an outer diameter equal to or larger than that of the outer tube 203, and is configured to be vertically movable in a horizontal posture by a boat elevator 115 vertically provided outside the process tube 205.
(substrate holder)
A boat 217 as a substrate holder for holding the wafer 200 is vertically supported on the seal cap 219. The wafer boat 217 includes: and a plurality of holding members 217a vertically provided between the pair of upper and lower end plates 217c and the end plate 217 c. The end plate 217c and the holding member 217a are made of a heat-resistant material such as quartz or SiC. A plurality of holding grooves 217b are provided at equal intervals in the longitudinal direction in each holding member 217 a. The plurality of wafers 200 are held in a plurality of stages with a horizontal posture and with centers aligned with each other with a space provided therebetween by inserting the circumferential edges of the wafers 200 into the holding grooves 217b of the plurality of holding members 217a on the same layer.
A pair of upper and lower auxiliary end plates 217d are supported by a plurality of auxiliary holding members 218 between the boat 217 and the seal cover 219. Each auxiliary holding member 218 is provided with a plurality of holding grooves. A plurality of not-shown thermal shields in a disk shape made of a heat-resistant material such as quartz or SiC are loaded in a plurality of stages in a horizontal posture in a holding tank. The heat insulating plate is configured to make it difficult for heat from a heater unit 207, which will be described later, to be conducted to the header 209 side.
A rotation mechanism 267 for rotating the boat 217 is provided on the side of the seal cap 219 opposite to the process chamber 201. The rotary shaft 255 of the rotary mechanism 267 penetrates the seal cover 219 to support the boat 217 from below. The wafer 200 can be rotated in the processing chamber 201 by rotating the rotation shaft 255. The seal cap 219 is configured to be vertically movable by the boat elevator 115, and thereby can transport the boat 217 into and out of the processing chamber 201.
The rotation mechanism 267 and the boat elevator 115 are electrically connected to the controller 280. The controller 280 is configured to control the rotation mechanism 267 and the boat elevator 115 to perform desired operations at desired timings.
(Heater unit)
A heater unit 207 as a heating means is provided outside the outer tube 203 so as to surround the outer tube 203, and the heater unit 207 heats the inside of the process tube 205 to be uniform as a whole or to have a predetermined temperature distribution. The heater unit 207 is supported by a frame (not shown) of the substrate processing apparatus 100, is vertically fixed, and is configured as a resistance heating type heater such as a graphite heater.
A temperature sensor 263 as a temperature detector is provided in the process tube 205. The heater unit 207 and the temperature sensor 263 are electrically connected to the control section 280. The controller 280 is configured to control the energization state of the heater unit 207 so that the temperature in the processing chamber 201 becomes a desired temperature distribution at a desired timing based on the temperature information detected by the temperature sensor 263.
Mainly, the heater unit 207 and the temperature sensor 263 constitute a heating unit (heating system) of the present embodiment.
(gas supply unit)
A tunnel-shaped preliminary chamber 201a is formed on a side wall of the inner tube 204 (a position opposite to 180 degrees of the air discharge hole 204a described later) so as to protrude outward in the radial direction of the inner tube 204 from the side wall of the inner tube 204 and extend long in the vertical direction. The side wall of the preliminary chamber 201a constitutes a part of the side wall of the inner tube 204. The inner wall of the preliminary chamber 201a forms a part of the inner wall of the processing chamber 201.
In the preliminary chamber 201a, nozzles 410 and 420 are provided along the inner wall of the preliminary chamber 201a (i.e., the inner wall of the processing chamber 201), and the nozzles 410 and 420 extend from the lower portion of the inner wall of the preliminary chamber 201a along the upper portion in the arrangement direction of the wafer 200 and supply gas into the processing chamber 201. That is, the nozzles 410 and 420 are provided along the wafer arrangement region, in a region which is laterally of the wafer arrangement region in which the wafer 200 is arranged and horizontally surrounds the wafer arrangement region. The nozzles 410 and 420 are formed as long L-shaped nozzles, and are provided such that their horizontal portions penetrate the manifold 209 and their vertical portions rise from at least one end side of the wafer placement region toward the other end side. For convenience, fig. 1 shows one nozzle, and actually, two nozzles 410 and 420 are provided as shown in fig. 2. A plurality of gas supply holes 410a and 420a for supplying gas are provided on the side surfaces of the nozzles 410 and 420, respectively. The gas supply holes 410a, 420a have the same or a dimensionally inclined opening area from the lower portion to the upper portion, respectively, and are arranged at the same opening pitch.
The horizontal portions of the nozzles 410 and 420 penetrating the manifold 209 have end portions outside the process tube 205 connected to gas supply tubes 310 and 320 as gas supply lines via gas introduction portions 410b and 420b, respectively.
An MFC (mass flow controller) 312 as a flow rate control device (flow rate control means) and a valve 314 are provided in this order from the upstream side in the gas supply pipe 310, and an Al-containing gas TMA (Al (CH) containing aluminum (Al) is used as a source gas, for example3)3Trimethyl aluminum) is supplied into the process chamber 201 through the gas supply pipe 310. Further, TMA is in a liquid state at normal temperature and pressure, and therefore, TMA in a liquid state is gasified by a gasification system such as a gasifier or bubbler, and supplied as TMA gas. Mainly, nozzle 410, gas supply pipe 310, MFC312, and valve 314 constitute a raw material gas supply unit. Further, the gasification system may be included in the raw material gas supply unit. For example, when the Al-containing gas is supplied from the gas supply pipe 310, the Al-containing gas supply unit is constituted by a raw material gas supply unit.
Further, N, which is an inert gas, is supplied to the gas supply pipe 310 on the downstream side of the valve 314 (between the valve 314 and the gas introduction portion 410 b)2A gas such as gas is supplied to the downstream end of the pipe, and from the upstream side, an MFC512 and a valve 514 are provided. By closing the valve 314 and opening the valve 514, only N can be supplied through the gas supply line 3102Gas is supplied to the process chamber 201.
On the other hand, the gas supply pipe 320 is provided with an MFC322 and a valve 324 in this order from the upstream side, and the gas supply pipe supplies O as an oxidizing gas as a reaction gas, i.e., an O (oxygen) -containing gas3The (ozone) gas is supplied to the processing chamber 201 through the gas supply pipe 320. O is3The gas acts as an oxidizing species. In addition, O3Gas generation of O3The ozone generator of (2), that is, an ozone generator, generates ozone and supplies the generated ozone to the processing chamber 201 through the gas supply pipe 320. Mainly, the nozzle 420, the gas supply pipe 320, the MFC322, and the valve 324 constitute an ozone gas supply unit as a reaction gas supply unit. The ozone generator may be included in the reaction gas supply unit. The raw material gas supply unit (first gas supply unit) and the ozone gas supply unit (second gas supply unit) are collectively referred to as a gas supply unit.
The MFCs 312, 322, 512 and valves 314, 324, 514 are electrically connected to the control 280. Controller 280 is configured to control MFCs 312, 322, and 512 and valves 314, 324, and 514 in such a manner that: the kind of gas supplied into the processing chamber 201 becomes a desired kind of gas at a desired timing; in addition, the flow rate of the supplied gas becomes a required amount at a required timing; furthermore, N2Flow rate of gas relative to O3The flow rate of the gas becomes a desired ratio at a desired timing.
An exhaust hole 204a, which is a notch-shaped through hole, for example, is formed in a vertically elongated manner at a position facing the nozzles 410 and 420, i.e., at a position opposite to the 180-degree side of the preliminary chamber 201a, on the side wall of the inner tube 204. The inside of the processing chamber 201 communicates with the inside of the exhaust passage 206 via the exhaust hole 204 a. Therefore, the gas supplied into the processing chamber 201 from the gas supply holes 410a and 420a of the nozzles 410 and 420 flows into the exhaust passage 206 through the exhaust hole 204a, then flows into the exhaust pipe 231 through the exhaust port, and is discharged to the outside of the processing furnace 202. The exhaust hole 204a is not limited to a notch-shaped through hole, and may be formed of a plurality of holes. In particular, the gas supplied from the gas supply holes 410a and 420a to the vicinity of the wafer 200 in the processing chamber 201 flows in the horizontal direction, that is, in the direction parallel to the surface of the wafer 200, and then flows into the exhaust passage 206 through the exhaust hole 204 a.
(controller)
As shown in fig. 3, the controller 280 as a control unit (control means) is constituted by a computer provided with: a CPU (Central Processing Unit) 280a, a RAM (Random Access Memory) 280b, a storage device 280c, and an I/O port 280 d. The RAM280b, the storage device 280c, and the I/O port 280d are configured to be able to exchange data with the CPU280a via the internal bus 280 e. The controller 280 is connected to an input/output device 282, which is formed of a touch panel or the like, for example.
The storage unit 280c is configured by, for example, a flash memory, an HDD (Hard Disk Drive), or the like. The storage device 280c stores, in a readable manner: a control program for controlling the operation of the substrate processing apparatus 100, a process recipe in which steps, conditions, and the like of substrate processing described later are described, and the like. The process recipe is a program that is combined and functions so that the controller (control unit) 280 executes each step in the substrate processing step described later to obtain a predetermined result. Hereinafter, the process recipe, the control program, and the like are also collectively referred to as simply "program". In the present specification, the term "program" includes: only one process recipe, only one control process, or both. The RAM280b is configured as a storage area (work area) for temporarily storing programs, data, and the like read by the CPU280 a.
The I/O port 280d is connected to the MFCs 312 and 322, the valves 314 and 324, the pressure sensor 245, the APC valve 231a, the vacuum pump 231c, the heater 207, the temperature sensor 263, the rotation mechanism 267, the boat elevator 115, and the like.
The CPU280a is configured to be able to read and execute a control program from the storage device 280c, and read a process recipe from the storage device 280c in accordance with an operation command or the like input from the input/output device 282. The CPU280a is configured to control, according to the contents of the read process recipe, the following: the operations of adjusting the flow rates of the respective gases by the MFCs 312, 322, 512, the operations of opening and closing the valves 314, 324, 514, the operations of opening and closing the APC valve 231a and the pressure of the APC valve 231a by the pressure sensor 245, the operations of adjusting the temperature of the heater 207 by the temperature sensor 263, the operations of starting and stopping the vacuum pump 231c, the operations of rotating and rotating the boat 217 by the rotating mechanism 267, the operations of lifting and lowering the boat 217 by the boat lifter 115, and the like.
The controller 280 is not limited to a dedicated computer, and may be a general-purpose computer. For example, the controller 280 of the present embodiment can be configured by preparing an external storage device (e.g., a magnetic disk such as a magnetic tape, a flexible disk, or a hard disk; an optical disk such as a CD or a DVD; an optical magnetic disk such as an MO; and a semiconductor memory such as a USB memory or a memory card) 283 in which the above-described program is stored, and by installing the program in a general-purpose computer or the like using the external storage device 283. Further, the means for supplying the program to the computer is not limited to the case of being supplied via the external storage device 283. For example, the program may be provided without the external storage device 283 by using a communication means such as the internet or a dedicated line. The storage device 280c and the external storage device 283 are configured as computer-readable storage media. Hereinafter, these are also collectively referred to as a storage medium.
In the present specification, the term "storage medium" includes: only the storage device 280c, only the external storage device 283, or both.
[ substrate treatment Process (film Forming Process) ]
Next, an example of a method of manufacturing a semiconductor device (device) by forming a film on a substrate using the substrate processing apparatus 100 described above as one of manufacturing steps of the semiconductor device (device) according to the present embodiment will be described. In the following description, the operations of the respective parts constituting the substrate processing apparatus 100 are controlled by the controller 280.
For example, in order to form a film on the wafer 200 by the method for manufacturing a semiconductor device according to the present embodiment, a program is prepared in which a substrate processing apparatus executes each step (step) of film formation by a computer, a process chamber 201 accommodating a plurality of wafers 200 as substrates to be processed in a state of being loaded on a boat 217 is heated at a predetermined temperature, and each wafer 200 in the process chamber 201 is alternately executed a predetermined number of times (n times) by: a raw material gas supply step (first gas supply step) of supplying TMA gas as a raw material gas from a plurality of supply holes 410a provided in the nozzle 410;and an ozone gas and inert gas supply step (second gas supply step) of supplying O as a reaction gas from a plurality of supply holes 420a provided in the nozzle 4203A gas, and N as an inert gas is supplied from a plurality of supply holes 410a provided in the nozzle 4102Gas, thereby forming an aluminum oxide film (AlO film) as a film containing Al and O on the wafer 200. In the second gas supply step, O is supplied to3N is supplied to the wafer 200 so that the gas easily reaches the center of the wafer 2002Accordingly, the thickness distribution of the film formed on the wafer 200 can be adjusted, and a film having high in-plane uniformity of film thickness can be formed.
An example of a specific procedure for carrying the wafer 200 out of the processing chamber 201 after the wafer is carried into the processing chamber 201 and film formation is performed will be described below.
(wafer Loading and boat introduction)
When a plurality of wafers 200 are loaded on the boat 217 (wafer loading), the boat 217 supporting the plurality of wafers 200 is lifted by the boat elevator 115 and loaded into the processing chamber 201 (boat introduction) as shown in fig. 1. In this state, the seal cap 219 seals the lower end of the reaction tube (process tube) 205 via an O-ring (not shown).
(pressure/temperature adjustment)
The vacuum pump 231c performs vacuum evacuation so that the pressure (vacuum degree) in the processing chamber 201, that is, the space in which the wafer 200 is present becomes a required pressure. At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 231a is feedback-controlled (pressure-adjusted) based on the measured pressure information. The vacuum pump 231c is kept in operation at least until the processing of the wafer 200 is completed.
The inside of the processing chamber 201 is heated by the heater 207 to a desired temperature. At this time, the amount of current supplied to the heater 207 is feedback-controlled (temperature-adjusted) based on the temperature information detected by the temperature sensor 263 so that the inside of the processing chamber 201 has a desired temperature distribution. The heating of the heater 207 within the process chamber 201 continues at least until the processing of the wafer 200 is complete.
Next, the boat 217 and the wafer 200 are rotated by the rotating mechanism 267. The rotation of the boat 217 and wafers 200 by the rotation mechanism 267 is continued at least until the processing of the wafers 200 is completed.
(film Forming step)
Thereafter, the raw material gas supply step (first gas supply step), the residual gas removal step (residual gas removal step), the ozone gas and inert gas supply step (second gas supply step), and the residual gas removal step (residual gas removal step) are sequentially performed a predetermined number of times.
[ raw material gas supply step ]
The valve 314 is opened to allow TMA gas to flow through the gas supply pipe 310. The TMA gas is supplied from the supply hole 410a to the wafer 200 while the flow rate thereof is adjusted by the MFC 312. I.e., the wafer 200 is exposed to TMA gas. TMA gas supplied from the supply hole 410a is discharged from the exhaust pipe 231 via the exhaust hole 204 a.
At this time, the pressure in the processing chamber 201 is adjusted to a pressure within a range of, for example, 1 to 1000Pa, preferably 1 to 100Pa, and more preferably 10 to 50Pa, by appropriately adjusting the APC valve 231 a. By setting the pressure in the processing chamber 201 to 1000Pa or less, the residual gas described later can be removed satisfactorily, and the TMA gas itself can be prevented from decomposing in the nozzle 410 and depositing on the inner wall of the nozzle 410. By setting the pressure in the processing chamber 201 to 1Pa or more, the reaction rate of the TMA gas on the surface of the wafer 200 can be increased, and a practical film formation rate can be obtained.
The supply flow rate of the TMA gas controlled by MFC312 is, for example, in the range of 10 to 2000sccm, preferably 50 to 1000sccm, and more preferably 100 to 500 sccm. By setting the supply flow rate of the TMA gas to 2000sccm or less, the residual gas to be described later can be removed favorably, and deposition on the inner wall of the nozzle 410 due to decomposition of the TMA gas itself in the nozzle 410 can be suppressed. Further, by setting the supply flow rate of the TMA gas to 10sccm or more, the reaction rate of the TMA gas on the surface of the wafer 200 can be increased, and a practical film formation rate can be obtained.
The time for supplying TMA gas to the wafer 200 is, for example, in the range of 1 to 60 seconds, preferably 1 to 20 seconds, and more preferably 2 to 15 seconds.
The heater 207 heats the wafer 200 so that the temperature of the wafer 200 is, for example, 200 to 600 ℃, preferably 350 to 550 ℃, and more preferably 400 to 550 ℃. By setting the temperature of the wafer 200 to 600 ℃ or lower, it is possible to suppress excessive thermal decomposition of the TMA gas and obtain an appropriate film formation rate. Further, since thermal decomposition of TMA gas starts at approximately 450 ℃ which is a condition close to the above process, it is more effective to apply the present invention to the process chamber 201 heated to a temperature of 550 ℃ or lower. On the other hand, when the temperature of the wafer 200 is 200 ℃ or higher, a film can be formed efficiently with high reactivity.
By supplying TMA gas into the process chamber 201 under the above conditions, an Al-containing layer is formed on the outermost surface of the wafer 200. The Al-containing layer may contain C and H in addition to Al. The Al-containing layer may be formed by physically adsorbing TMA, chemically adsorbing a substance generated by decomposing a part of TMA, thermally decomposing TMA, and depositing Al on the outermost surface of the wafer 200. That is, the Al-containing layer may be an adsorption layer (physical adsorption layer or chemical adsorption layer) that adsorbs TMA or a substance generated by decomposition of a part of TMA, or may be a deposited layer (Al layer) of Al.
[ residual gas removal step ]
After the Al-containing layer is formed, the valve 314 is closed to stop the supply of TMA gas. At this time, the inside of the processing chamber 201 is evacuated by the vacuum pump 231c while keeping the APC valve 231a open, and TMA gas remaining in the processing chamber 201 after the unreacted or Al-containing layer formation is promoted is removed from the processing chamber 201.
In addition, the gas remaining in the processing chamber 201 may not be completely exhausted. If the gas remaining in the processing chamber 201 is a trace amount, there is substantially no adverse effect in the subsequent steps.
[ ozone gas and inert gas supply step ]
Removing residual gas in the processing chamber 201Thereafter, the valve 324 is opened, and O as a reaction gas is flowed into the gas supply pipe 3203A gas. O is3The gas is supplied to the wafer 200 in the processing chamber 201 from the supply hole 420a of the nozzle 420 while being adjusted in flow rate by the MFC322, and is exhausted from the exhaust pipe 231 through the exhaust hole 204 a. I.e., wafer 200 is exposed to O3A gas.
Further, when the valve 324 is opened, O is supplied from the supply hole 420a into the processing chamber 2013When the gas is supplied, the valve 514 is opened, and N as an inert gas is introduced into the gas supply pipe 3102And (4) qi. N is a radical of2The gas is supplied into the processing chamber 201 from the supply hole 410a of the nozzle 410 while being adjusted in flow rate by the MFC512, and is discharged from the exhaust pipe 231 through the exhaust hole 204 a.
At this time, the pressure in the processing chamber 201 is adjusted to a pressure within a range of, for example, 1 to 1000Pa, preferably 50 to 500Pa, and more preferably 100 to 200Pa, by appropriately adjusting the APC valve 231 a.
O controlled through MFC3223The supply flow rate of the gas is, for example, 5 to 40slm, preferably 5 to 30slm, and more preferably 10 to 20 slm. O is supplied to the wafer 2003The gas time is, for example, in the range of 1 to 120 seconds, preferably 10 to 90 seconds, and more preferably 20 to 60 seconds.
O is supplied into the processing chamber 201 from the supply hole 420a3While supplying N into the processing chamber 201 from the supply hole 410a2Gas, thereby making O3The flow velocity of the gas increases and easily reaches the center portion of the wafer.
As shown in fig. 2, the nozzles 410 and 420 are preferably adjacent to each other, and the supply holes 410a and 420a are preferably opened toward the center of the wafer 200. In the second gas supply step, when N flows from the supply hole 410a2Gas flows in parallel from the adjacent supply holes 420a3When gas, N from the supply hole 410a2Gas will become O from the supply hole 420a3In the form of a one-sided barrier to gas, such that O3The gas easily reaches the wafer 200 (the center portion of the wafer 200).
However, when N is from the supply hole 410a2When the gas supply amount is too large, O may be inhibited3The flow of gas toward the center portion of the wafer 200. In addition, when N is from the supply hole 410a2When the gas supply amount is excessive, O from the supply hole 420a3Gas N2Diluting with gas to make O3The concentration of the gas is lowered, possibly hindering O3The gas reaches the wafer 200. Therefore, it is preferable to improve the uniformity of the in-plane distribution of the thickness of the film formed on the wafer 200 with respect to O3Adjustment of gas supply amount N2The amount of gas supplied.
The film thickness distribution is due to N2The flow rate of the gas is changed. From the viewpoint of reducing the convex shape of the film, the gas flow rate from each supply hole in the second gas supply step is preferably in the following range.
N from gas supply hole 410a2The flow rate of gas: 0.5-30 slm;
o from gas supply hole 420a3Flow rate of gas: 9 to 30 slm.
The temperature, the rotation number, and other processing conditions of the wafer 200 in the second gas supply step are the same as those in the raw material gas supply step (first gas supply step).
In the second gas supply step, the gas flowing through the processing chamber 201 is only O3Gas and inert gas (N)2Gas). O is3The gas reacts with at least a part of the Al-containing layer formed on the wafer 200 in the raw material gas supply step. The Al-containing layer is oxidized to form an aluminum oxide layer (AlO layer) containing Al and O as a metal oxide layer. Namely, the Al-containing layer is modified into the AlO layer.
In the step of supplying the ozone gas and the inert gas in one cycle (the second gas supply step), the first (the start timing of the supply of the ozone gas) may be set to be N2The amount of gas supplied is such that O is3The amount of gas supplied is large and O is added3The supply amount of gas is gradually decreased. If initially making O3When the amount of gas supplied is large, the thickness distribution formed on the surface of the wafer 200 becomes thick at the center of the wafer 200 at first and follows with O3Gas (es)The amount of supply of (2) is reduced, and a film is easily formed on the peripheral portion (edge portion) of the wafer 200, thereby improving the film thickness uniformity.
Alternatively, the first time (the time when the supply of ozone gas is started) may be relative to N2The amount of gas supplied is such that O is3The amount of gas supplied is small and O is made to be small3The supply amount of gas is gradually increased. If initially making O3When the amount of gas supplied is small, the thickness distribution formed on the surface of the wafer 200 becomes thinner at the center of the wafer 200 at first and follows with O3The amount of gas supplied increases, and a film is easily formed on the center portion of the wafer 200, thereby improving film thickness uniformity.
Alternatively, N may be performed alternately2The film thickness uniformity is achieved by repeating the cycle of the flow rate a and the flow rate B, which are different in the gas supply amount (flow rate), or by repeating the flow rate a plurality of times and then repeating the flow rate B a plurality of times.
In the ozone gas and inert gas supply step (second gas supply step), it is preferable to adjust N in accordance with the surface area of the wafer 2002The amount of gas supplied to adjust the thickness distribution of the film formed on the wafer 200. For example, when a fine pattern is formed on the surface of a wafer, since the surface has irregularities with a large aspect ratio and the surface area is large compared to a bare wafer, O is easily consumed from the outer peripheral portion of the wafer 200 toward the central portion compared to when the bare wafer is processed3Gas, the film thickness uniformity is easily reduced. Therefore, when a wafer having a fine pattern formed thereon is processed, the surface roughness of the wafer is higher than that of a bare wafer3The amount of gas supplied is such that N2The amount of gas supplied is relatively large, and the uniformity of film thickness can be improved.
[ residual gas removal step ]
After the AlO layer is formed, the valves 324, 524 are closed, stopping O3Gas and N2And (4) supplying gas. Then, the remaining unreacted or the O after promoting the formation of the AlO layer in the processing chamber 201 is treated by the same treatment step as the residual gas removing step after the raw material gas supplying step3Gas, and N2Qi regulating and reversingThe by-products should be removed from the process chamber 201. In this case, the process chamber 201 is not completely purged of residual gas and the like, and the process chamber is similar to the residual gas removal step after the source gas supply step.
[ predetermined number of executions ]
The raw material gas supply step, the residual gas removal step, the ozone gas and inert gas supply step, and the residual gas removal step are sequentially performed one or more times (predetermined times), so that the AlO film is formed on the wafer 200. The number of times of this cycle may be appropriately selected according to the film thickness required for the finally formed AlO film, and it is preferable that this cycle is repeated a plurality of times.
The thickness (film thickness) of the AlO film is, for example, 0.1 to 100nm, preferably 1 to 30nm, and more preferably 1 to 10 nm.
In the case where the above-described cycle is performed two or more times, the oxygen gas may be supplied to the oxygen gas in the second gas supply step for each cycle3The amount of gas supplied is such that N2The amount of gas supplied is changed to adjust the film thickness distribution.
For example, as shown in fig. 4, the following tendency is exhibited: if relative to O in the second gas supply process3The amount of gas supplied is such that N2When the above cycle is repeated with a large amount of gas supplied, a convex film 300a having a large film thickness is formed on the center of the wafer. On the other hand, as shown in fig. 5, the following tendency is exhibited: if relative to O in the second gas supply process3The amount of gas supplied is such that N2When the circulation is performed with a small amount of gas supplied, a concave film 300b having a small film thickness is formed at the center of the wafer. Therefore, for example, as shown in fig. 6, in the second gas supply step in the first half of the cycle, the amount of oxygen relative to O is set to be smaller3The amount of gas supplied is such that N2The film is formed in a convex shape with a large film thickness at the center of the wafer due to a large gas supply amount, and in the second gas supply step in the second half of the cycle, the film is formed with respect to O3The amount of gas supplied is such that N2The film is formed in a concave shape with a small film thickness at the center of the wafer due to a small gas supply amount, thereby forming a filmThe combination of the convex-shaped film thickness distribution and the concave-shaped film thickness distribution results in the formation of the film 300c having high in-plane uniformity.
In the second gas supply step in the first half of the cycle, the film thickness distribution may be concave with respect to O3The amount of gas supplied is such that N2The amount of gas supplied is small, and the film thickness distribution is convex relative to O in the second gas supply step in the second half of the cycle3The amount of gas supplied is such that N2The film having high in-plane uniformity is formed as a result of a large amount of gas supplied.
(post purge/atmospheric recovery)
When the film forming step is completed, the valve 514 is opened to supply N into the processing chamber 201 from the gas supply pipe 3102And gas is discharged from the gas exhaust pipe 231. N is a radical of2The gas functions as a purge gas to remove residual gas or by-products in the processing chamber 201 from the processing chamber 201 (post-purge). Thereafter, the ambient gas in the processing chamber 201 is replaced with N2Qi (N)2Gas replacement), the pressure in the processing chamber 201 is returned to normal pressure (atmospheric pressure recovery).
(boat export/wafer unload)
Thereafter, the seal cap 219 is lowered by the boat elevator 115 to open the lower end of the manifold 209, and the processed wafer 200 is carried out (boat lead-out) from the lower end of the manifold 209 to the outside of the process tube 205 while being supported by the boat 217. After the boat is taken out, a shutter (not shown) is moved, and the lower end opening of the manifold 209 is sealed (the shutter is closed) by the shutter via an O-ring (not shown). The processed wafer 200 is carried out of the reaction tube 205, and then taken out from the boat 217 (wafer unloading).
< second embodiment >
Fig. 7 is a schematic cross-sectional view showing the arrangement of nozzles for supplying gas in the vertical processing furnace of the structure of the substrate processing apparatus according to the second embodiment. The substrate processing apparatus of the present embodiment is a modification of the first embodiment, and includes, in the preliminary chamber 201a, similarly to the substrate processing apparatus of the first embodiment: feeding workNozzle 410 for TMA as source gas, and supply of O3A nozzle 420 for gas. The nozzles 410 and 420 are provided with gas supply holes 410a and 420a, respectively, facing the center of the wafer 200, the gas supply hole 410a of the nozzle 410 opens to the center of the wafer 200, and the gas supply hole 420a of the nozzle 420 opens between the nozzle 410 and the edge of the wafer 200.
In the first gas supply step, TMA gas is supplied from the gas supply hole 410a through the nozzle 410, and in the second gas supply step, O is supplied from the gas supply hole 420a through the nozzle 4203Gas, and N is supplied from the gas supply hole 410a via the nozzle 4102And (4) qi. At this time, O is supplied from the gas supply hole 420a toward the gap between the nozzle 410 and the edge of the wafer 2003Gas, and N supplied from a gas supply hole 410a toward the center of the wafer 2002Gas to make O3The gas also faces the center of the wafer 200, promotes the reaction at the center of the wafer 200, and is directed to O supplied from the gas supply hole 420a3The amount of gas supplied is adjusted by adjusting the amount of N supplied from the gas supply hole 410a2The in-plane uniformity of the film thickness can be improved by the amount of gas supplied.
In the first and second embodiments, the raw material gas in the first gas supply step and the ozone gas in the second gas supply step are supplied to the wafer 200 through separate gas supply lines, and in the second gas supply step, the inert gas is supplied to the wafer 200 through the gas supply line through which the raw material gas is supplied in the first gas supply step. In this configuration, the gas supply line for supplying the source gas in the first gas supply step is also used as the gas supply line for supplying the inert gas in the second gas supply step, and the apparatus cost can be reduced.
< third embodiment >
A gas supply line for supplying an inert gas may be provided as the third gas supply unit separately from the gas supply line for supplying the raw material gas. In the second gas supply step, N from the nozzle 410 that supplies TMA in the first gas supply step may not be increased2Increasing the amount of gas supplied to increase O3The gas flow rate is such that it easily reaches the center of the wafer 200, for example, at the time of supply O3One for supplying N is arranged on each side of the nozzle of the gas2Gas nozzle and supply of N in the second gas supply step2And (4) qi.
Fig. 8 is a schematic cross-sectional view showing the arrangement of nozzles for supplying gas in the vertical processing furnace of the structure of the substrate processing apparatus according to the third embodiment. The substrate processing apparatus according to the present embodiment includes, in the preliminary chamber 201 a: nozzle 410 for supplying TMA as a source gas, and supply O3Gas nozzle 420, and N supply to both sides of nozzle 4202 Gas nozzles 430, 440. Namely, supply N2Gas nozzles 430 and 440 are provided to pass the gas supply O in a plan view3The gas nozzle 420 and the exhaust pipe 231. The nozzles 410, 420, 430, and 440 are provided with gas supply holes 410a, 420a, 430a, and 440a, respectively, which are open toward the center of the wafer 200, and are configured to supply gas through the gas supply pipes 310, 320, 330, and 340, respectively. Further, supply N2The opening orientations of the gas supply holes 430a, 440a of the gas are preferably such that N is supplied from these gas supply holes 430a, 440a2The gas forms O supplied from the gas supply hole 420a3The walls of the two sides of the gas are parallel.
In the first gas supply step, TMA gas is supplied from the gas supply hole 410a through the nozzle 410, and in the second gas supply step, O is supplied from the gas supply hole 420a through the nozzle 4203Gas is supplied from gas supply holes 430a and 440a through nozzles 430 and 440, respectively, to N2And (4) qi. Thereby, N is used2O to be supplied from the gas supply hole 420a3In the form of a two-sided barrier to gas, such that O3The gas more easily reaches the wafer 200 (the center portion of the wafer 200).
< fourth embodiment >
Fig. 9 is a schematic cross-sectional view showing the arrangement of nozzles for supplying gas in the vertical processing furnace of the structure of the substrate processing apparatus according to the fourth embodiment. The substrate processing apparatus according to the present embodiment includes, in the preliminary chamber 201 a: supplied as a raw material gasNozzle 410 (first gas supply unit) for TMA of gas, supply O3Nozzle 420 (second gas supply unit) for gas, and supply N2The gas nozzles 430 (third gas supply unit) have gas supply holes 410a, 420a, and 430a formed in the center of the wafer 200, respectively, in the nozzles 410, 420, and 430. In this manner, using the substrate processing apparatus including the dedicated nozzles 410, 420, and 430, the TMA gas is supplied from the gas supply hole 410a through the nozzle 410 in the first gas supply step, and the O gas is supplied from the gas supply hole 420a through the nozzle 420 in the second gas supply step3Gas, and N is supplied from the gas supply hole 430a through the nozzle 4302And (4) qi. Then, with respect to O3Adjustment of gas supply amount N2The film having high in-plane uniformity can be formed by adjusting the thickness distribution of the film formed on the wafer by the amount of gas supplied.
Further, similarly to the substrate processing apparatus according to the first embodiment shown in fig. 1, the gas supply pipe 310 communicating with the nozzle 410 is connected to the supply N2The gas carrier gas is supplied to the downstream end of the pipe and is provided with an MFC and a valve, respectively. Then, in the second gas supply step, O may be supplied from the gas supply hole 420a through the nozzle 4203Gas, and N is supplied from the gas supply holes 410a, 430a through the two nozzles 410, 4302And (4) qi. The nozzles 410 and 430 are provided on both sides of a straight line passing through the nozzle 420 and the exhaust pipe 231 in a plan view. Thereby, N is used2O to be supplied from the gas supply hole 420a3In the form of a two-sided barrier to gas, such that O3The gas easily reaches the wafer 200. Then, with respect to O3Adjustment of gas supply amount N2The film formed on the wafer 200 can be formed with high in-plane uniformity by adjusting the distribution of the thickness of the film by the amount of gas supplied.
The embodiments of the present invention have been specifically described above. However, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention.
For example, in the above-described embodiment, TMA gas is used as an example of the Al-containing gas as the raw material gasThe present invention is not limited to the above, and for example, aluminum chloride (AlCl) may be used3) Etc. as the raw material gas.
In addition, N is used as the inert gas pair2Examples of the gas are described, but the gas is not limited thereto, and rare gases such as Ar gas, He gas, Ne gas, and Xe gas may be used.
In the above-described embodiments, the example of forming the AlO film on the substrate was described, but the films formed by the present invention are not limited to the AlO film, and the present invention can be applied to alternately supplying the raw material gas and O as the reaction gas3And gas to form a film on the substrate. Examples of such films include metal oxide films such as ZrO, TiO, and HfO. Further, the present invention can also be applied to a film obtained by laminating these films or a case where a composite film is formed.
In the above-described embodiment, the example of using ozone gas as the reactive gas has been described, but the present invention is not limited to this. For example, oxygen (O) may be used as the oxygen-containing gas2) Water vapor (H)2O), and the like. Although the example of using the oxygen-containing gas as the reaction gas has been described, a nitrogen-containing gas subjected to nitriding treatment may be used. As the nitrogen-containing gas, for example, ammonia (NH) gas3). By using such a gas, a nitride film or an oxynitride film can be formed over the substrate. The film thickness distribution formed on the substrate can be adjusted for such a film. Further, although the present invention can be applied to such a treatment, the use of an oxygen-containing gas, particularly O, as described above3The gas can obtain a significant effect in adjusting the film thickness distribution.
It is preferable that recipes (programs describing process steps, process conditions, and the like) used in the film formation process are prepared separately according to process contents (the type, composition ratio, film quality, film thickness, process steps, process conditions, and the like of the formed film) and stored in the storage device 280c in advance via an electronic communication line or the external storage device 123. Further, when starting the process, the CPU280a preferably selects an appropriate recipe from the plurality of recipes stored in the storage device 280c as appropriate in accordance with the process content. Thus, films of various types, composition ratios, film qualities, and film thicknesses can be formed with good reproducibility by one substrate processing apparatus, and appropriate processing can be performed in each case. In addition, the burden on the operator (input burden such as processing steps and processing conditions) can be reduced, an operation error can be prevented, and the processing can be started quickly.
The recipe is not limited to the newly created recipe, and for example, an existing recipe that is already installed in the substrate processing apparatus may be prepared by being changed. When the recipe is changed, the changed recipe may be installed in the substrate processing apparatus via an electronic communication line or a storage medium in which the recipe is recorded. Further, the input/output device 282 provided in the existing substrate processing apparatus may be operated to directly change the existing recipe already installed in the substrate processing apparatus.
The above embodiments, modifications, and the like may be combined and used as appropriate. The processing steps and processing conditions in this case may be the same as those in the above-described embodiments and modifications.
< modification example >
Fig. 10 is a schematic cross-sectional view showing the arrangement of nozzles for supplying gas in a vertical processing furnace of a substrate processing apparatus, which is a modification of the third embodiment. The nozzles 410 and 430 are provided on both sides of a straight line passing through the nozzle 420 and the exhaust pipe 231 in a plan view.
In the first gas supply process, TMA gas is supplied from the gas supply holes 410a and/or the gas supply holes 430a through the nozzles 410 and/or the nozzles 430.
In the second gas supply step, O is supplied from the gas supply hole 420a via the nozzle 4203Gas, and N is supplied from the gas supply hole 410a and the gas supply hole 430a via the nozzle 410 and the nozzle 4302And (4) qi. At this time, N is supplied from one of the gas supply hole 410a and the gas supply hole 430a2The flow rate of N is from the other side2The air flow is large. That is, N supplied from the gas supply hole 410a and the gas supply hole 430a is made2The flow rate of gas is different. For example, make fromN supplied from the gas supply hole 410a2The flow rate of the gas is large, so that N supplied from the gas supply hole 430a2The flow of gas is small. Thus, N is supplied from the gas supply hole 410a and the gas supply hole 430a at different flow rates2Gas, thereby causing O3 gas supplied from the gas supply hole 420a to be supplied to N at both sides2The gas is easily applied to the wafer 200 in the gas barrier state, and is more easily supplied to the edge portion side than the center portion of the wafer 200. This can alleviate the convex distribution of the film formed on the wafer 200, and improve the in-plane uniformity of the film. In the second gas supply step, the flow rate from each gas supply hole is preferably in the following range from the viewpoint of improving the in-plane uniformity of the film.
N from gas supply hole 410a2The flow rate of gas: 10-30 slm;
o from gas supply hole 420a3Flow rate of gas: 9-30 slm;
n from gas supply hole 430a2The flow rate of gas: 0.5 to 30 slm.
Examples
The present invention will be described more specifically with reference to the following examples, but the present invention is not limited to these examples.
In order to examine the relationship between the respective supply amounts of the ozone gas and the nitrogen gas and the film thickness distribution, the film thickness distribution was measured by changing the flow rate of the nitrogen gas with respect to the flow rate of the ozone gas.
[ Experimental conditions ]
TMA and O were performed by using a substrate processing apparatus having the structure shown in FIG. 13The reaction was carried out, and a film formation treatment was performed on an Si substrate (300mm wafer) for film thickness measurement to form an aluminum oxide film.
(Experimental example 1)
In experimental example 1, TMA gas and O were supplied into the processing chamber under the following conditions3Gas, N2And forming an aluminum oxide film (AlO film) on the 300mm wafer.
< first gas supplying step >
Flow rate of TMA gas: 200sccm
Supply time of TMA gas: 10 seconds
< second gas supply step >
O3Flow rate of gas: 20slm
N2The flow rate of gas: 60slm
O3Gas and N2Gas supply time: 20 seconds
The first gas supply step and the second gas supply step were performed as one cycle, and the total of 50 cycles was performed to form an AlO film on the wafer surface.
The thickness distribution of the AlO film formed on the wafer surface was measured, and as shown in fig. 4, a film thickness distribution in which the film thickness increased from the edge portion toward the center portion of the wafer was obtained.
(Experimental example 2)
In experimental example 2, TMA gas and O were supplied into the processing chamber under the following conditions3Gas, N2And forming an aluminum oxide film (AlO film) on the 300mm wafer.
< first gas supplying step >
Flow rate of TMA gas: 200sccm
Supply time of TMA gas: 10 seconds
< second gas supply step >
O3Flow rate of gas: 20slm
N2The flow rate of gas: 5slm
O3Gas and N2Gas supply time: 20 seconds
The first gas supply step and the second gas supply step were performed as one cycle, and the total of 50 cycles was performed to form an AlO film on the wafer surface.
The thickness distribution of the AlO film formed on the wafer surface was measured, and as shown in fig. 5, a film thickness distribution in which the film thickness decreased from the edge portion toward the center portion of the wafer was obtained.
(Experimental example 3)
In experimental example 3, O in the second gas supply step was supplied as follows3The amount of gas supplied is such that N2The film formation was performed while changing the gas supply amount of the gas.
First to twenty-fifth cycles-
< first gas supplying step >
Flow rate of TMA gas: 200sccm
Supply time of TMA gas: 10 seconds
< second gas supply step >
O3Flow rate of gas: 20slm
N2The flow rate of gas: 60slm
O3Gas and N2Gas supply time: 20 seconds
Twenty-sixth to fifty-fifth cycle
< first gas supplying step >
Flow rate of TMA gas: 200sccm
Supply time of TMA gas: 10 seconds
< second gas supply step >
O3Flow rate of gas: 20slm
N2The flow rate of gas: 5slm
O3Gas and N2Gas supply time: 20 seconds
The thickness distribution of the AlO film formed on the wafer surface was measured, and as shown in fig. 6, a film thickness distribution having high in-plane uniformity of film thickness was obtained.
In one batch, the process is supplied with respect to O in the second gas in the first half of the cycle3The amount of gas supplied is such that N2The amount of gas supplied is relatively large, and in the latter half of the cycle, the amount of gas is compared with the amount of O in the second gas supply step3The amount of gas supplied is such that N2The amount of gas supplied is relatively small, and a flat film thickness profile can be obtained by combining the convex film thickness distribution in the first half of the cycle and the concave film thickness in the second half of the cycle.
Various exemplary embodiments of the present invention have been described above, but the present invention is not limited to these embodiments. The above-described embodiments, modifications, and the like may be used in appropriate combinations.
The present specification is incorporated by reference in its entirety as disclosed in japanese patent application 2018-180802, filed on 26.9.2018.
All documents, patent applications, and specifications described in the present specification are incorporated herein by reference to the same extent as if each were specifically and individually indicated.
Description of the symbols
10-a substrate processing apparatus; 200-wafer (one example of substrate); 201-a process chamber; 280-a controller (control section); 410. 420, 430, 440-nozzle; 410a, 420a, 430a, 440a — a gas supply hole (an example of a gas supply portion).
Claims (15)
1. A method for manufacturing a semiconductor device, comprising:
a first gas supply step of supplying a source gas to a substrate accommodated in a processing chamber; and
a second gas supply step of supplying a reaction gas to the substrate,
and a second gas supply step of supplying the reaction gas to the substrate from a reaction gas supply system that supplies the reaction gas, and supplying an inert gas to the substrate from a supply system different from the reaction gas supply system so that the reaction gas easily reaches a center portion of the substrate.
2. The method for manufacturing a semiconductor device according to claim 1,
the raw material gas in the first gas supply step and the reaction gas in the second gas supply step are supplied to the substrate from separate gas supply lines, and the inert gas is supplied to the substrate in the second gas supply step through the gas supply line through which the raw material gas is supplied in the first gas supply step.
3. The method for manufacturing a semiconductor device according to claim 1,
in the second gas supply step, the supply amount of the inert gas is adjusted in accordance with the surface area of the substrate.
4. The method for manufacturing a semiconductor device according to claim 1,
in the second gas supply step, the supply amount of the reaction gas is increased relative to the supply amount of the inert gas at the start of the supply of the reaction gas.
5. The method for manufacturing a semiconductor device according to claim 4,
in the second gas supply step, the supply amount of the reaction gas is gradually reduced.
6. The method for manufacturing a semiconductor device according to claim 1,
in the second gas supply step, the supply amount of the reaction gas is reduced relative to the supply amount of the inert gas at the start of the supply of the reaction gas.
7. The method for manufacturing a semiconductor device according to claim 6,
in the second gas supply step, the supply amount of the reaction gas is gradually increased.
8. The method for manufacturing a semiconductor device according to claim 1,
the first gas supply step and the second gas supply step are repeated a plurality of times,
in the second gas supply step, the supply amount of the inert gas is changed with respect to the supply amount of the reaction gas.
9. The method for manufacturing a semiconductor device according to claim 8,
in the second gas supplying step, the amount of the inert gas to be supplied is reduced relative to the amount of the reaction gas to be supplied, and the first gas supplying step and the second gas supplying step are repeated.
10. The method for manufacturing a semiconductor device according to claim 8,
in the second gas supplying step, the first gas supplying step and the second gas supplying step are repeated while the amount of the inert gas to be supplied is increased relative to the amount of the reaction gas to be supplied.
11. The method for manufacturing a semiconductor device according to claim 8,
in the repeating of the first and second gas supplying steps, the first and second gas supplying steps are repeated while the amount of the inert gas supplied is reduced with respect to the amount of the reaction gas supplied in the second gas supplying step of the first half,
in the second gas supply step of the second half, the first gas supply step and the second gas supply step are repeated while the supply amount of the inert gas is increased relative to the supply amount of the reaction gas.
12. The method for manufacturing a semiconductor device according to claim 1,
the nozzles for supplying the inert gas in the second gas supply step are provided on both sides of a straight line passing through the nozzle for supplying the reaction gas and the exhaust pipe, and the flow rates of the inert gas supplied from the nozzles for supplying the inert gas are made different.
13. The method for manufacturing a semiconductor device according to any one of claims 1 to 12,
the reaction gas is ozone gas.
14. A program for causing a computer to execute the substrate processing apparatus, the program comprising:
a first gas supply step of supplying a source gas to a substrate accommodated in a processing chamber of a substrate processing apparatus; and
a second gas supply step of supplying a reaction gas to the substrate,
and a step of alternately performing the first gas supply step and the second gas supply step to form a film on the substrate, wherein in the second gas supply step, the reaction gas is supplied to the substrate from a reaction gas supply system that supplies the reaction gas, and an inert gas is supplied to the substrate from a supply system different from the reaction gas supply system so that the reaction gas easily reaches a center portion of the substrate.
15. A substrate processing apparatus includes:
a processing chamber for receiving and processing a substrate;
a gas supply unit having a first gas supply unit configured to supply a source gas to the substrate accommodated in the processing chamber and a second gas supply unit configured to supply a reaction gas to the substrate; and
a control unit configured to control the gas supply unit such that: and alternately performing a first gas supply step of supplying the raw material gas from the first gas supply unit to the substrate accommodated in the processing chamber and a second gas supply step of supplying the reaction gas from the second gas supply unit to the processing chamber, wherein in the second gas supply step, the reaction gas is supplied to the substrate and an inert gas is supplied from the first gas supply unit to the substrate so that the reaction gas easily reaches a center portion of the substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
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| JP2018180802 | 2018-09-26 | ||
| JP2018-180802 | 2018-09-26 | ||
| PCT/JP2019/036615 WO2020066800A1 (en) | 2018-09-26 | 2019-09-18 | Method for manufacturing semiconductor device, substrate processing apparatus, and program |
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| CN112689888B CN112689888B (en) | 2024-06-18 |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006286716A (en) * | 2005-03-31 | 2006-10-19 | Hitachi Kokusai Electric Inc | Method of manufacturing semiconductor device |
| JP2010118462A (en) * | 2008-11-12 | 2010-05-27 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
| JP2015010247A (en) * | 2013-06-27 | 2015-01-19 | 株式会社日立国際電気 | Production method of semiconductor device, substrate processing device and substrate processing program |
| CN104947080A (en) * | 2014-03-26 | 2015-09-30 | 东京毅力科创株式会社 | Film forming apparatus using gas nozzles |
| JP2015173226A (en) * | 2014-03-12 | 2015-10-01 | 株式会社アルバック | Vacuum deposition apparatus and deposition method using this apparatus |
| JP2016174158A (en) * | 2016-04-08 | 2016-09-29 | 株式会社日立国際電気 | Substrate processing apparatus, and method for manufacturing semiconductor device |
| US20170067159A1 (en) * | 2015-09-09 | 2017-03-09 | Hitachi Kokusai Electric Inc. | Method of Manufacturing Semiconductor Device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03255618A (en) * | 1990-03-05 | 1991-11-14 | Fujitsu Ltd | Vertical type cvd device |
| JP5854112B2 (en) | 2011-09-30 | 2016-02-09 | 東京エレクトロン株式会社 | Thin film forming method and film forming apparatus |
| JP6105967B2 (en) | 2012-03-21 | 2017-03-29 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing method, substrate processing apparatus, and program |
| JP5852151B2 (en) | 2014-02-12 | 2016-02-03 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing apparatus, program, and recording medium |
| JP6689179B2 (en) | 2016-11-30 | 2020-04-28 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Semiconductor device manufacturing method, substrate processing apparatus, and program |
-
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006286716A (en) * | 2005-03-31 | 2006-10-19 | Hitachi Kokusai Electric Inc | Method of manufacturing semiconductor device |
| JP2010118462A (en) * | 2008-11-12 | 2010-05-27 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
| JP2015010247A (en) * | 2013-06-27 | 2015-01-19 | 株式会社日立国際電気 | Production method of semiconductor device, substrate processing device and substrate processing program |
| JP2015173226A (en) * | 2014-03-12 | 2015-10-01 | 株式会社アルバック | Vacuum deposition apparatus and deposition method using this apparatus |
| CN104947080A (en) * | 2014-03-26 | 2015-09-30 | 东京毅力科创株式会社 | Film forming apparatus using gas nozzles |
| US20170067159A1 (en) * | 2015-09-09 | 2017-03-09 | Hitachi Kokusai Electric Inc. | Method of Manufacturing Semiconductor Device |
| JP2016174158A (en) * | 2016-04-08 | 2016-09-29 | 株式会社日立国際電気 | Substrate processing apparatus, and method for manufacturing semiconductor device |
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| JPWO2020066800A1 (en) | 2021-08-30 |
| JP7079340B2 (en) | 2022-06-01 |
| WO2020066800A1 (en) | 2020-04-02 |
| CN112689888B (en) | 2024-06-18 |
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