CN112689609A - 一种黑磷相超薄铋纳米片改性的复合膜及其制备方法 - Google Patents
一种黑磷相超薄铋纳米片改性的复合膜及其制备方法 Download PDFInfo
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- CN112689609A CN112689609A CN201880096143.3A CN201880096143A CN112689609A CN 112689609 A CN112689609 A CN 112689609A CN 201880096143 A CN201880096143 A CN 201880096143A CN 112689609 A CN112689609 A CN 112689609A
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- bismuth
- black phosphorus
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- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title claims abstract description 134
- 229910052797 bismuth Inorganic materials 0.000 title claims abstract description 131
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 239000002135 nanosheet Substances 0.000 title claims abstract description 74
- 239000002131 composite material Substances 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 55
- 239000004065 semiconductor Substances 0.000 claims abstract description 34
- 239000011159 matrix material Substances 0.000 claims abstract description 23
- 239000010408 film Substances 0.000 claims description 106
- 239000000758 substrate Substances 0.000 claims description 36
- HVFOPASORMIBOE-UHFFFAOYSA-N tellanylidenechromium Chemical group [Te]=[Cr] HVFOPASORMIBOE-UHFFFAOYSA-N 0.000 claims description 34
- 239000011651 chromium Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 17
- 238000002207 thermal evaporation Methods 0.000 claims description 15
- 229910052804 chromium Inorganic materials 0.000 claims description 13
- 238000001704 evaporation Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- 229910052714 tellurium Inorganic materials 0.000 claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 11
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 8
- 229910052723 transition metal Inorganic materials 0.000 claims description 8
- -1 transition metal chalcogenide Chemical class 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000002055 nanoplate Substances 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 28
- 230000000704 physical effect Effects 0.000 abstract description 11
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 238000003786 synthesis reaction Methods 0.000 abstract description 5
- 230000005389 magnetism Effects 0.000 abstract description 3
- 230000005291 magnetic effect Effects 0.000 description 11
- 238000001451 molecular beam epitaxy Methods 0.000 description 9
- 230000001105 regulatory effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 7
- 230000002687 intercalation Effects 0.000 description 6
- 238000009830 intercalation Methods 0.000 description 6
- 238000011160 research Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 241001274978 Siganus Species 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000604 Ferrochrome Inorganic materials 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 2
- 238000005094 computer simulation Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000002524 electron diffraction data Methods 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910016001 MoSe Inorganic materials 0.000 description 1
- 229910016021 MoTe2 Inorganic materials 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 210000003625 skull Anatomy 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/01—Manufacture or treatment
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
Abstract
一种黑磷相超薄铋纳米片改性的复合膜及其制备方法。所述复合膜包括基体膜及插层在基体膜中的黑磷相铋纳米片。实现了黑磷相铋二维材料的大量合成及对材料物性调控的应用，为工业界利用黑磷相铋材料对磁性、半导体等材料进行物性调控提供可行的路线，拓展铋金属的应用领域。
Description
PCT国内申请，说明书已公开。
Claims (20)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2018/111346 WO2020082223A1 (zh) | 2018-10-23 | 2018-10-23 | 一种黑磷相超薄铋纳米片改性的复合膜及其制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112689609A true CN112689609A (zh) | 2021-04-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880096143.3A Pending CN112689609A (zh) | 2018-10-23 | 2018-10-23 | 一种黑磷相超薄铋纳米片改性的复合膜及其制备方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN112689609A (zh) |
| WO (1) | WO2020082223A1 (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112941627B (zh) * | 2021-01-29 | 2023-10-13 | 中南大学 | 一种垂直生长的超薄Cr2Te3单晶纳米片的制备方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009079777A1 (en) * | 2007-12-21 | 2009-07-02 | The University Of British Columbia | Gallium arsenide semiconductor material incorporating bismuth and process for epitaxial growth |
| CN102623132A (zh) * | 2012-03-30 | 2012-08-01 | 海南大学 | 利用表面活化剂提高各向异性磁电阻灵敏度的方法 |
| CN103526297A (zh) * | 2013-10-17 | 2014-01-22 | 西南交通大学 | 一种制备拓扑绝缘体Bi2Se3薄膜的方法 |
| CN104051610A (zh) * | 2013-03-15 | 2014-09-17 | 三星电子株式会社 | 具有插入层的磁性结和使用该磁性结的磁存储器 |
-
2018
- 2018-10-23 WO PCT/CN2018/111346 patent/WO2020082223A1/zh active Application Filing
- 2018-10-23 CN CN201880096143.3A patent/CN112689609A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009079777A1 (en) * | 2007-12-21 | 2009-07-02 | The University Of British Columbia | Gallium arsenide semiconductor material incorporating bismuth and process for epitaxial growth |
| CN102623132A (zh) * | 2012-03-30 | 2012-08-01 | 海南大学 | 利用表面活化剂提高各向异性磁电阻灵敏度的方法 |
| CN104051610A (zh) * | 2013-03-15 | 2014-09-17 | 三星电子株式会社 | 具有插入层的磁性结和使用该磁性结的磁存储器 |
| CN103526297A (zh) * | 2013-10-17 | 2014-01-22 | 西南交通大学 | 一种制备拓扑绝缘体Bi2Se3薄膜的方法 |
Non-Patent Citations (1)
| Title |
|---|
| SHIN YAGINUMA等: "Electronic Structure of Ultrathin Bismuth Films with A7 and Black-Phosphorus-like Structures", JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, vol. 77, no. 1, pages 1 - 5 * |
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| Publication number | Publication date |
|---|---|
| WO2020082223A1 (zh) | 2020-04-30 |
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