CN112687574B - Monitoring system and monitoring method for wafer cleaning state - Google Patents
Monitoring system and monitoring method for wafer cleaning state Download PDFInfo
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- CN112687574B CN112687574B CN201910990400.4A CN201910990400A CN112687574B CN 112687574 B CN112687574 B CN 112687574B CN 201910990400 A CN201910990400 A CN 201910990400A CN 112687574 B CN112687574 B CN 112687574B
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Abstract
The invention discloses a monitoring system and a monitoring method for a wafer cleaning state, wherein the monitoring system for the wafer cleaning state comprises a container, a three-way liquid medicine valve and a first sensor, the container comprises a first inlet and a second inlet, the first inlet is used for conveying deionized water into the container, the second inlet is used for conveying cleaning liquid into the container, and therefore the deionized water and the cleaning liquid are mixed to form mixed liquid; one interface of the three-way liquid medicine valve is communicated with the first inlet and is used for introducing the cleaning liquid into the container; the first sensor is arranged in the container and used for acquiring the parameter value of the mixed liquid in the container so as to judge whether the cleaning state of the wafer is normal or not.
Description
Technical Field
The invention relates to a monitoring system and a monitoring method for a wafer cleaning state.
Background
Conventionally, with the miniaturization of the design requirements of semiconductor products, the management space for wafer uniformity, particles, and the like in cleaning equipment for semiconductor products has been becoming smaller, and thus the processing method of wafers has been generally changed from batch processing to single-wafer processing. In the batch processing equipment, the quality of the wafer is judged by measuring the resistance at the final stage so as to ensure the quality of the wafer, but in the leaf type processing, due to the structural limitation of the leaf type cleaning equipment, the wafer cannot be further monitored after being processed, so that the quality of the wafer cannot be ensured.
Disclosure of Invention
In view of the above, it is necessary to provide a system for monitoring a wafer cleaning state, which can ensure the quality of a wafer even in a single-wafer processing.
In addition, it is necessary to provide a method for monitoring a wafer cleaning state, which can monitor the wafer cleaning state to ensure the quality of the wafer even in the single-wafer processing.
A system for monitoring wafer cleaning status, comprising:
a container including a first inlet for delivering deionized water into the container and a second inlet for delivering a cleaning solution into the container such that the deionized water and the cleaning solution mix to form a mixed solution;
a connector of the three-way liquid medicine valve is communicated with the first inlet and is used for introducing the cleaning liquid into the container;
the first sensor is arranged in the container and used for acquiring the parameter value of the mixed liquid in the container so as to judge whether the cleaning state of the wafer is normal or not.
A method for monitoring a wafer cleaning state comprises the following steps:
conveying deionized water into the container;
conveying a cleaning solution into the container to mix the deionized water and the cleaning solution to form a mixed solution;
and acquiring the parameter value of the mixed liquid, and further judging whether the cleaning state of the wafer is normal.
Compared with the prior art, the wafer cleaning state monitoring system provided by the invention has the advantages that the cleaning liquid in the preset time period in the cleaning process is introduced into the container and mixed with the deionized water to obtain the mixed liquid, and the parameter value of the mixed liquid is monitored by the first sensor to judge whether the cleaning process is normal or not so as to ensure the quality of the wafer.
Drawings
FIG. 1 is a block diagram of a wafer cleaning status monitoring system according to an embodiment of the present invention;
FIG. 2 illustrates a state change diagram of the monitoring system shown in FIG. 1 in accordance with one embodiment;
fig. 3 is a flow chart illustrating a method for monitoring a wafer cleaning status according to an embodiment of the invention.
Description of the main elements
Three-way liquid medicine valve 30
Detailed Description
Referring to fig. 1, a system 100 for monitoring a wafer cleaning status is provided. In this embodiment, the monitoring system 100 is in communication with the cleaning apparatus 200, and is configured to introduce at least a portion of the cleaning liquid in the cleaning apparatus 200 to monitor the cleaning state of the wafer, where the cleaning apparatus 200 may be, but is not limited to, a single-blade cleaning apparatus. The monitoring system 100 includes a container 10, a three-way medical fluid valve 30, a first sensor 50, and a second sensor 70.
Specifically, the container 10 includes a first inlet 11 and a second inlet 12, the first inlet 11 is used for delivering deionized water into the container 10, and the second inlet 12 is used for delivering a cleaning solution into the container 10, so that the deionized water and the cleaning solution are mixed to form a mixed solution. In this embodiment, the deionized water is unused deionized water, and the cleaning solution is a solution containing various chemicals after the wafer is cleaned with deionized water.
Further, the container 10 further includes a first discharge port 13 and a second discharge port 14, in this embodiment, the first discharge port 13 is disposed on a sidewall of the container 10, and discharges a small amount of deionized water when the deionized water is conveyed to the container 10, so that the deionized water is in a flowing circulation state, rather than a completely static state; the second outlet 14 is disposed on the bottom wall of the container 10 to discharge the mixed liquid after the cleaning state of the wafer is monitored. Of course, in other embodiments, the first discharge port 13 and the second discharge port 14 may be disposed at other positions, and are not limited herein.
It will be appreciated that the first inlet 11, the second inlet 12, the first outlet 13 and the second outlet 14 are connected to a pipe and controlled by a control valve.
The three-way liquid medicine valve 30 is used to introduce a cleaning liquid for a preset period of time into the container 10. In the present embodiment, the three-way chemical liquid valve 30 includes a first port 31, a second port 32, and a third port 33, wherein the first port 31 communicates with the cleaning apparatus 200 through a pipe, the second port 32 communicates with the first inlet 11 through a pipe to enable the cleaning liquid to be introduced into the container 10, and the third port 33 communicates with the outside through a pipe to discharge the cleaning liquid to the outside.
The preset time period is defined as at least one time period of the whole process of cleaning the wafer by the cleaning equipment. It is understood that the preset time period may be a later time period or an intermediate time period of the whole cleaning process of the cleaning apparatus for cleaning the wafer, and is not limited herein.
Specifically, the three-way liquid medicine valve 30 is switched according to the system requirements, such that the first port 31 and the second port 32 are respectively communicated to introduce the cleaning liquid into the container 10, or the first port 31 and the third port 33 are communicated to discharge the cleaning liquid to the outside.
It will be appreciated that since the cleaning apparatus 200 is used to clean wafers at an early stage, the cleaning solution is typically introduced into the container 10 for a later period of time to monitor for accurate parameter values.
For example, referring to fig. 2, the time required for the entire process of cleaning the wafer by the cleaning apparatus 200 is set to 90s, and the first port 31 is communicated with the third port 33 (as shown in fig. 2 (a)) at 30s of the initial period of the cleaning process of the wafer, so that the cleaning liquid is discharged to the outside; at 30s in the middle period of the wafer cleaning process, the cleaning liquid is introduced into the container 10 for monitoring by switching the three-way liquid medicine valve 30 to communicate the first interface 31 with the second interface 32 (as shown in fig. 2 (b)); at 30s later in the wafer cleaning process, the first port 31 communicates with the third port 33, so that the cleaning liquid is discharged to the outside, and the mixed liquid in the container 10 is discharged through the first discharge port 13 and the second discharge port 14 (as shown in fig. 2 (c)). Of course, in other embodiments, the cleaning liquid may be introduced into the container 10 for monitoring at any time period of the cleaning process according to the requirement, which is not limited herein.
The first sensor 50 is disposed in the container 10, and is used for acquiring a parameter value of the mixed liquid in the container 10, and further determining whether the cleaning state of the wafer is normal.
In this embodiment, if the parameter value is greater than or equal to the preset parameter value, it is determined that the cleaning state of the wafer is normal; if the parameter value is smaller than the preset parameter value, the cleaning state of the wafer is judged to be abnormal, and an alarm is triggered to prompt a worker.
In another embodiment, monitoring system 100 further comprises an alarm (not shown) that is triggered to alert the operator if the parameter value of the mixed liquor is less than the preset parameter value.
In this embodiment, the first sensor 50 is a conductivity sensor or a pH sensor, but may be other sensors, such as a concentration meter, in other embodiments, and is not limited thereto.
When the first sensor 50 is a conductivity sensor, the parameter value is conductivity, and the range of the preset parameter value, that is, the range of the preset conductivity is greater than 15.0M Ω · cm; when the first sensor 50 is a pH sensor, the parameter value is a pH value, and the range of the preset parameter value, that is, the range of the preset pH value is 6 to 8, for example, 6, 7, or 8. It can be understood that the preset parameter values are the same in the same cleaning process, and in different cleaning processes, the appropriate preset parameter values can be selected within the range of the preset parameter values according to the requirements, which is not limited herein.
It can be understood that the first sensor 50 is arranged to obtain the parameter value of the mixed liquid to determine whether the parameter value is greater than or equal to the preset parameter value and further determine whether the state of cleaning the wafer is normal, so as to effectively ensure the quality of the wafer. In the present embodiment, the volume ratio of the cleaning liquid to the deionized water in the mixed solution is 1:1 to 100, for example, 1:1, 1, or 1.
It can be understood that in the cleaning process of different devices, the concentration of the cleaning liquid is different, so that the amount of the deionized water required for the parameter value of the mixed liquid to reach the preset parameter value is different. Specifically, the higher the proportion of chemical components contained in the cleaning solution is, i.e., the higher the concentration of the cleaning solution is, the more deionized water is needed, and the smaller the volume ratio of the cleaning solution to the deionized water is; conversely, the lower the ratio of chemical components contained in the cleaning solution, i.e., the lower the concentration of the cleaning solution, the less deionized water is required, and the larger the volume ratio of the cleaning solution to the deionized water, therefore, the volume ratio of the cleaning solution to the deionized water needs to be adjusted according to the cleaning process.
In one embodiment, the volume ratio of the cleaning solution to the deionized water is obtained as follows. In a certain cleaning process, whether the cleaning result is normal is judged through the performance of the cleaned wafer and the like, if the cleaning result is normal, the cleaning liquid in a time period is selected to be mixed with the deionized water, so that the parameter value of the cleaning liquid after being mixed and diluted with the deionized water is larger than or equal to a preset range value, for example, the conductivity value is 16.0M omega cm, and at the moment, the volume ratio of the cleaning liquid to the deionized water when the cleaning liquid in the time period is diluted to the preset parameter value can be obtained. Therefore, in the same subsequent process, the time period is taken as a preset time period, and the cleaning liquid in the preset time period is diluted according to the volume ratio of the obtained cleaning liquid to the deionized water, so that the parameter value of the diluted mixed liquid is judged to be greater than or equal to the preset parameter value, and whether the cleaning state of the wafer is normal or not is further judged.
It is understood that in other cleaning processes, the volume ratio of the cleaning solution to the deionized water is obtained in the same manner.
The second sensor 70 is disposed in the container 10 above the first sensor 50, and is used for detecting whether the liquid level of the deionized water in the container 10 reaches a predetermined level, so as to ensure that the first sensor 50 is immersed in the deionized water.
It will be appreciated that the second sensor 70 is capable of detecting the level of deionized water to ensure that the first sensor 50 is completely immersed in deionized water prior to delivery of the cleaning solution.
The wafer cleaning state monitoring system 100 provided by the present invention obtains a mixed solution by introducing a cleaning solution in a preset time period into the container 10 and mixing the cleaning solution with deionized water, and determines whether the cleaning process is normal by setting the first sensor 50 to monitor a parameter value of the mixed solution, so as to ensure the quality of the wafer.
Referring to fig. 3, the present invention further provides a method for monitoring a wafer cleaning state, including:
step S101, deionized water is conveyed into the container.
In this embodiment, the vessel includes a first inlet for delivering deionized water into the vessel.
And S102, conveying the cleaning liquid in a preset time period into a container so as to mix the deionized water and the cleaning liquid to form a mixed liquid.
In this embodiment, the container further includes a second inlet, and the second inlet is configured to deliver a cleaning solution into the container, so that the deionized water and the cleaning solution are mixed to form a mixed solution, where the cleaning solution is a solution containing various chemical substances after the wafer is cleaned by using the deionized water.
The preset time period is defined as at least one time period of the whole process of cleaning the wafer by the cleaning equipment. It is understood that the preset time period may be a later time period or an intermediate time period of the whole cleaning process of the cleaning apparatus for cleaning the wafer, and is not limited herein.
It can be understood that, since the cleaning equipment has a high proportion of chemical substances in the cleaning solution at the initial stage of cleaning the wafer, in order to obtain accurate parameter values, the cleaning solution at the later stage of the cleaning process is usually introduced into the container for monitoring. Of course, in other embodiments, the cleaning liquid may be introduced into the container for monitoring at any time period of the cleaning process according to the requirement, which is not limited herein.
Step S103, obtaining the parameter value of the mixed liquid, and further judging whether the cleaning state of the wafer is normal.
Specifically, the step of determining whether the cleaning state of the wafer is normal includes:
comparing the parameter value with a preset parameter value, and if the parameter value is greater than or equal to the preset parameter value, judging that the cleaning state of the wafer is normal; if the parameter value is smaller than the preset parameter value, the cleaning state of the wafer is judged to be abnormal.
The parameter value is the conductivity, and the range of the preset parameter value, namely the range of the preset conductivity is more than 15.0M omega cm; the parameter value is a pH value, and the range of the preset parameter value, i.e. the range of the preset pH value, is 6 to 8, for example, 6, 7, or 8. It can be understood that the preset parameter values are the same in the same cleaning process, and in different cleaning processes, the appropriate preset parameter value can be selected within the range of the preset parameter value according to the requirement, which is not limited herein.
It can be understood that the condition of cleaning the wafer is judged whether to be normal or not according to the parameter value by obtaining the parameter value of the mixed liquid, so that the quality of the wafer can be effectively ensured. In the present embodiment, the volume ratio of the cleaning liquid to the deionized water in the mixed solution is 1:1 to 100, for example, 1:1, 1, or 1.
It can be understood that in the cleaning process of different devices, the concentrations of the cleaning liquids are different, so that the amount of the deionized water required for the parameter value of the mixed liquid to be greater than or equal to the preset parameter value is different. Specifically, the higher the proportion of chemical components contained in the cleaning solution is, i.e., the higher the concentration of the cleaning solution is, the more deionized water is needed, and the smaller the volume ratio of the cleaning solution to the deionized water is; conversely, the lower the proportion of chemical components contained in the cleaning solution, i.e., the lower the concentration of the cleaning solution, the less deionized water is required, and the larger the volume ratio of the cleaning solution to the deionized water, therefore, the volume ratio of the cleaning solution to the deionized water needs to be adjusted according to the cleaning process.
In one embodiment, before the step of delivering the cleaning liquid into the container, the method further comprises:
whether the liquid level of the deionized water in the container reaches a preset liquid level is detected so as to ensure that the first sensor is soaked in the deionized water.
It will be appreciated that by detecting the level of deionized water, it is ensured that the first sensor needs to be completely immersed in the deionized water before the cleaning solution is delivered.
According to the method for monitoring the wafer cleaning state, the cleaning liquid in the cleaning process within the preset time period is introduced into the container and mixed with the deionized water to obtain the mixed liquid, and the parameter value of the mixed liquid is monitored to judge whether the cleaning process is normal or not, so that the quality of the wafer is ensured.
Finally, it should be noted that the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (10)
1. A system for monitoring a cleaning condition of a wafer, comprising:
a container comprising a first inlet and a second inlet, the first inlet being configured to deliver deionized water into the container, the second inlet being configured to deliver a cleaning solution into the container, such that the deionized water and the cleaning solution mix to form a mixed solution;
a three-way liquid medicine valve, wherein one interface of the three-way liquid medicine valve is communicated with the second inlet and is used for introducing the cleaning liquid in a preset time period into the container, and the preset time period is a later time period or a middle time period of the whole cleaning process of the wafer;
the first sensor is arranged in the container and used for acquiring the parameter value of the mixed liquid in the container so as to judge whether the cleaning state of the wafer is normal or not.
2. The system for monitoring the cleaning status of a wafer as claimed in claim 1, further comprising:
the second sensor is arranged in the container and positioned above the first sensor and used for detecting whether the liquid level of the deionized water in the container reaches a preset liquid level or not so as to ensure that the first sensor is soaked in the deionized water.
3. The system for monitoring the cleaning state of the wafer according to claim 1, wherein the volume ratio of the cleaning solution to the deionized water in the mixed solution is in a range of 1 to 1.
4. The system as claimed in claim 1, wherein the parameter value is conductivity or pH.
5. The wafer cleaning state monitoring system according to claim 4, wherein the magnitude of the parameter value is compared with a preset parameter value, if the parameter value is greater than or equal to the preset parameter value, the wafer cleaning state is determined to be normal, and if the parameter value is the conductivity, the range of the preset parameter value is greater than 15.0 ㏁ cm; and when the parameter value is the pH value, the range of the preset parameter value is 6~8.
6. A method for monitoring a cleaning condition of a wafer, comprising:
conveying deionized water into the container;
conveying cleaning liquid in a preset time period into the container so as to enable the deionized water and the cleaning liquid to be mixed to form a mixed liquid, wherein the preset time period is a later time period or a middle time period of the whole cleaning process of the wafer;
and acquiring the parameter value of the mixed liquid, and further judging whether the cleaning state of the wafer is normal.
7. The method as claimed in claim 6, wherein the step of determining whether the cleaning status of the wafer is normal comprises:
comparing the parameter value with a preset parameter value, and if the parameter value is greater than or equal to the preset parameter value, judging that the cleaning state of the wafer is normal; and if the parameter value is smaller than the preset parameter value, judging that the cleaning state of the wafer is abnormal.
8. A method for monitoring a cleaning status of a wafer as recited in claim 7, wherein the parameter value is a conductivity or a pH value.
9. The method for monitoring the cleaning state of the wafer as claimed in claim 8, wherein when the parameter value is the conductivity, the range of the preset parameter value is more than 15.0 ㏁ cm; and when the parameter value is the pH value, the range of the preset parameter value is 6~8.
10. The method for monitoring the cleaning state of the wafer according to claim 6, wherein the volume ratio of the cleaning liquid to the deionized water in the mixed liquid is in a range of 1 to 1.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08236494A (en) * | 1995-02-28 | 1996-09-13 | Nec Corp | Wafer cleaner and method of cleaning the same |
| JPH11290800A (en) * | 1998-04-14 | 1999-10-26 | Matsushita Electric Ind Co Ltd | Chemical treatment device, chemical treatment method and substrate washing method |
| CN1305587A (en) * | 1998-06-08 | 2001-07-25 | Memc电子材料有限公司 | Process for monitoring concentration of metallic impurities in wafer cleaning solution |
| KR20070079695A (en) * | 2006-02-03 | 2007-08-08 | 삼성전자주식회사 | Equipment for cleaning semiconductor wafer |
| CN108172533A (en) * | 2017-12-25 | 2018-06-15 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | control system, method and wafer cleaning device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030047194A1 (en) * | 2001-09-12 | 2003-03-13 | Tsai Lung Hui | Apparatus and method for cleaning wafers |
| JP2006253552A (en) * | 2005-03-14 | 2006-09-21 | Toshiba Corp | Method and device for washing semiconductor |
| JP4917965B2 (en) * | 2007-05-28 | 2012-04-18 | ソニー株式会社 | Substrate cleaning method and substrate cleaning apparatus |
| US20120048303A1 (en) * | 2010-08-26 | 2012-03-01 | Macronix International Co., Ltd. | Process system and cleaning process |
| US11007620B2 (en) * | 2017-11-14 | 2021-05-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for cleaning process monitoring |
-
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- 2019-10-17 CN CN201910990400.4A patent/CN112687574B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08236494A (en) * | 1995-02-28 | 1996-09-13 | Nec Corp | Wafer cleaner and method of cleaning the same |
| JPH11290800A (en) * | 1998-04-14 | 1999-10-26 | Matsushita Electric Ind Co Ltd | Chemical treatment device, chemical treatment method and substrate washing method |
| CN1305587A (en) * | 1998-06-08 | 2001-07-25 | Memc电子材料有限公司 | Process for monitoring concentration of metallic impurities in wafer cleaning solution |
| KR20070079695A (en) * | 2006-02-03 | 2007-08-08 | 삼성전자주식회사 | Equipment for cleaning semiconductor wafer |
| CN108172533A (en) * | 2017-12-25 | 2018-06-15 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | control system, method and wafer cleaning device |
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