CN112680115A - Application of cerium oxide particles in polishing process - Google Patents
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- CN112680115A CN112680115A CN202110004107.3A CN202110004107A CN112680115A CN 112680115 A CN112680115 A CN 112680115A CN 202110004107 A CN202110004107 A CN 202110004107A CN 112680115 A CN112680115 A CN 112680115A
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- 239000002245 particle Substances 0.000 title claims abstract description 199
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 title claims abstract description 119
- 229910000420 cerium oxide Inorganic materials 0.000 title claims abstract description 118
- 238000007517 polishing process Methods 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 67
- 239000002243 precursor Substances 0.000 claims abstract description 61
- 238000005498 polishing Methods 0.000 claims abstract description 56
- 239000002002 slurry Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000001237 Raman spectrum Methods 0.000 claims abstract description 7
- 238000001354 calcination Methods 0.000 claims description 68
- 238000000227 grinding Methods 0.000 claims description 24
- 238000002360 preparation method Methods 0.000 claims description 20
- 238000010298 pulverizing process Methods 0.000 claims description 15
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 14
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 14
- 238000009826 distribution Methods 0.000 claims description 13
- 230000001186 cumulative effect Effects 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000000843 powder Substances 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- GHLITDDQOMIBFS-UHFFFAOYSA-H cerium(3+);tricarbonate Chemical compound [Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O GHLITDDQOMIBFS-UHFFFAOYSA-H 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims description 2
- 238000002203 pretreatment Methods 0.000 claims 2
- 238000009837 dry grinding Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 7
- 239000000126 substance Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses application of cerium oxide particles in a polishing process. The cerium oxide particles are used as polishing particles of polishing slurry in a polishing process; the first particle size of the precursor material of the cerium oxide particles is 200-; the Raman spectrum of the cerium oxide particles is contained in 458cm‑1Peak sum of (A) and (B) 583cm‑1And wherein at 458cm‑1Intensity of peak at 583cm‑1The ratio of the intensities of the peaks is a peak ratio, and the peak ratio of the cerium oxide particles is 70 to 90. The present invention controls the peak ratio of the cerium oxide particles and the particle size of the precursor material of the cerium oxide particles within a certain range, so that the cerium oxide particles have excellent removal rate and selectivity when applied to the CMP process of STI, and have the characteristics of causing no micro-scratch or minimizing the number of micro-scratchesCapability.
Description
Technical Field
The invention relates to application of cerium oxide particles in a polishing process.
Background
In the fabrication of integrated circuits and other electronic devices, multiple layers of conductive, semiconductive, and dielectric materials are deposited onto or removed from a substrate surface. As layers of material are sequentially deposited onto and removed from the substrate, the uppermost surface of the substrate may become non-planar and require planarization. Planarizing or "polishing" a surface is a process in which material is removed from the surface of a substrate to form a generally uniformly flat surface. Planarization can be used to remove undesirable surface topography and surface defects, such as rough surfaces, agglomerated materials, lattice damage, scratches, and contaminated layers or materials. Planarization may also be used to form features on a substrate by removing excess deposited material that is used to fill the features and provide a uniform surface for subsequent processing and metallization levels.
Compositions and methods for planarizing or polishing a substrate surface are well known in the art. Chemical mechanical planarization or Chemical Mechanical Polishing (CMP) is a common technique used to planarize substrates. CMP employs a chemical composition, referred to as a CMP composition or more simply as a polishing composition (also referred to as a polishing slurry), for selectively removing material from a substrate. Typically, the polishing composition is applied to the substrate by contacting the surface of the substrate with a polishing pad (e.g., a polishing cloth or disk) saturated with the polishing composition. Typically, the polishing of the substrate is further aided by the chemical activity of the polishing composition and/or the mechanical activity of an abrasive suspended in the polishing composition or incorporated into the polishing pad (e.g., a fixed-abrasive polishing pad).
The types of the polishing slurry can be roughly classified into three types, i.e., oxide polishing slurry, metal polishing slurry, and polysilicon wafer polishing slurry, according to the object to be treated. The oxide polishing slurry is suitable for polishing the surface of an interlayer insulating film in a Shallow Trench Isolation (STI) process and silicon dioxide (SiO)2) A layer substantially comprising polishing particles, deionized water, and the like. The polishing particles are used for mechanically polishing the surface of the workpiece by the pressure generated by the polishing machine. The polishing particles may comprise silicon dioxide (SiO)2) Cerium oxide (CeO)2) Or aluminum oxide (Al)2O3)。
Specifically, in the STI process, ceria slurry is generally used for polishing a silicon oxide layer, and in this case, a silicon nitride layer may be mainly used as a polishing stopper. Generally, an additive may be added to the ceria slurry to reduce the removal rate of the nitride layer, thereby improving the polishing rate selectivity of the oxide layer to the nitride layer. However, the use of additives is disadvantageous in that it may reduce the removal rate of the oxide layer as well as the removal rate of the nitride layer. In addition, the polishing agent particles of the ceria slurry are generally larger than those of the silica slurry, thereby causing scratches to be formed on the wafer surface. However, if the polishing rate selectivity of the oxide layer to the nitride layer is low, the pattern of the adjacent nitride layer is damaged due to the removal of the excess oxide layer, resulting in a dishing phenomenon at the processed surface. Therefore, it is impossible to achieve uniform surface flatness.
Therefore, the slurry used in the STI CMP process should have high selectivity, high polishing speed, high dispersion, highly stable micro scratch distribution, and highly concentrated and uniform particle size distribution. The method of patent CN1818002B is demanding on particle size, and its selection ratio, particle residue and scratch number are still to be improved.
Disclosure of Invention
In view of the above problems in the prior art, the present invention is directed to developing a novel application of cerium oxide particles to improve the performance of CMP in various aspects, and provides an application of cerium oxide particles in a polishing process, wherein the cerium oxide particles are used as polishing particles of a polishing slurry in the polishing process; the specific cerium oxide particles are obtained by controlling the peak ratio of the cerium oxide particles and the particle size of the precursor material of the cerium oxide particles, and can be applied to polishing slurry used in the CMP process of STI.
The invention provides an application of cerium oxide particles in a polishing process, wherein the cerium oxide particles are used as polishing particles of polishing slurry in the polishing process; the first particle size (D1) of the precursor material of the cerium oxide particles is 200-500 μm, which is a particle size at which the cumulative particle distribution of the precursor material of the cerium oxide particles is 1%, i.e., the volume content of particles larger than this particle size is 1% of the total particles;
the Raman spectrum of the cerium oxide particles is contained in 458cm-1Peak sum of (A) and (B) 583cm-1And wherein at 458cm-1Intensity of peak at 583cm-1The ratio of the intensities of the peaks is a peak ratio, the peak ratio of the cerium oxide particles is 70 to 90, and in the present invention, 458cm-1And 583cm-1The peak is the characteristic peak of the cerium oxide particles, and the positions of the two characteristic peaks can be +/-5 cm within the allowable range of experimental system errors-1Within range offset.
Preferably, the first particle size (D1) of the precursor material of the cerium oxide particles is 220-450 μm, such as 226 μm, 289 μm, 330 μm or 410 μm.
Preferably, the cerium oxide particles have a peak ratio of 75 to 90, such as 79, 83, 85 or 88.
The raman spectrum can be collected by methods conventional in the art, and preferably, the raman spectrum of the cerium oxide particles is collected using a 532nm laser.
Preferably, the second particle size (D50) of the precursor material of the cerium oxide particles is in the range of 30-180 μm, such as 60-180 μm, and more such as 98 μm, 110 μm, 120 μm or 176 μm, and the second particle size of the precursor material of the cerium oxide particles is a particle size in which the cumulative distribution of the particles of the precursor material of the cerium oxide particles is 50%, also called median particle size or median particle size, i.e. the volume content of particles larger than this particle size is 50% of the total particles.
The third particle size (D99) of the precursor material of the cerium oxide particles, which is a particle size having a cumulative distribution of particles of the precursor material of the cerium oxide particles of 99%, i.e., a volume content of particles larger than this particle size accounts for 99% of the total particles, may be conventional in the art, and is preferably 0.5 to 3.5 μm, such as 1 to 2.5 μm, and further such as 1.5 μm, 1.9 μm, 2.2 μm, or 2.3 μm.
The particle size (D90) of the cerium oxide particles may be conventional in the art, and is preferably 20 to 60nm, such as 40 to 60nm, and further such as 42nm, 45nm, 50nm or 55nm, and the particle size of the cerium oxide particles is a particle size in which the cumulative distribution of the particles of the cerium oxide particles is 90%, that is, the volume content of particles larger than this particle size is 90% of the total particles.
The precursor material for the cerium oxide particles may be conventional in the art, for example, comprising cerium carbonate.
Preferably, the cerium oxide particles are prepared by a non-wet process.
Preferably, the cerium oxide particles are prepared by a preparation method comprising the steps of: preparing cerium dioxide powder from a precursor material of cerium oxide particles through a solid generation step, mixing the cerium dioxide powder with water, and grinding to obtain slurry containing the cerium oxide particles.
The preparation method preferably further comprises a pretreatment step of the precursor material before the solid generation step, for example, the pretreatment step comprises drying the precursor material.
In the preparation method, the solid generation step may be conventional in the art, and preferably, the solid generation step includes calcination.
In the preparation method, the temperature of the calcination may be conventional in the art, such as 500-.
In the preparation method, preferably, the calcination may include one or more steps, and for example, the calcination may be a single-step calcination, a two-step calcination, or a three-step calcination, and further, for example, a single-step calcination.
Wherein, preferably, the single-step calcination is: the precursor material of the cerium oxide particles is subjected to primary calcination, and more preferably, the precursor material of the cerium oxide particles is subjected to primary calcination at 750-800 ℃ for 3-10h, for example, at 780 ℃ for 4 h.
Preferably, the two-step calcination is: subjecting the precursor material of the cerium oxide particles to primary calcination, pulverization or grinding, and secondary calcination, more preferably, subjecting the precursor material of the cerium oxide particles to primary calcination for 3-10h at 800 ℃ and pulverization or grinding, and subjecting the precursor material of the cerium oxide particles to secondary calcination for 3-10h at 700 ℃ and 600 ℃ for example, subjecting the precursor material of the cerium oxide particles to calcination for 4h at 750 ℃, grinding, and continuing calcination for 4h at 650 ℃.
Preferably, the three-step calcination is: subjecting the precursor material of the cerium oxide particles to primary calcination, pulverization or grinding, secondary calcination, pulverization or grinding, and tertiary calcination, more preferably, subjecting the precursor material of the cerium oxide particles to primary calcination for 3-10h at 800 ℃, pulverization or grinding, subjecting the precursor material of the cerium oxide particles to secondary calcination for 3-10h at 700 ℃ and grinding or grinding, and subjecting the precursor material of the cerium oxide particles to tertiary calcination for 3-10h at 650 ℃ and 550 ℃, for example, subjecting the precursor material of the cerium oxide particles to calcination for 4h at 750 ℃, pulverization, further calcination for 4h at 650 ℃, pulverization, and further calcination for 4h at 600 ℃.
In the preparation process, the mixing can be carried out in a manner customary in the art, for example in a mixer rotating at high speed.
In the preparation method, the water may be conventional in the art, for example, deionized water.
In the preparation method, the mass ratio of the cerium oxide powder to the water may be conventional in the art, and is, for example, 1 (9-49), and further is, for example, 1: 9.
In the preparation method, the grinding can be performed by a conventional apparatus in the art, such as a dry grinder.
In the preparation method, the crushing or grinding step may employ a crushing or grinding apparatus conventional in the art, such as a classifier, a crusher or an air jet mill.
Preferably, the content of the cerium oxide particles in the polishing slurry is 2% to 10% by mass, for example, 10%.
Preferably, the polishing slurry can be used in a CMP process for STI.
The above preferred conditions can be arbitrarily combined to obtain preferred embodiments of the present invention without departing from the common general knowledge in the art.
The reagents and starting materials used in the present invention are commercially available.
The positive progress effects of the invention are as follows: the invention controls the particle peak ratio of the cerium oxide particles and the particle size of the precursor material of the cerium oxide particles within a certain range, so that the cerium oxide particle has excellent removal rate and selectivity when being applied to the CMP process of STI, and has the capability of not causing micro scratches or minimizing the number of the micro scratches.
Detailed Description
The invention is further illustrated by the following examples, which are not intended to limit the scope of the invention. The experimental methods without specifying specific conditions in the following examples were selected according to the conventional methods and conditions, or according to the commercial instructions.
The instruments and models are shown in table 1:
TABLE 1
The test method comprises the following steps:
peak ratio detection: collecting a Raman spectrum of the cerium oxide particles by using 532nm laser; detection is at 458cm-1Intensity of peak at position (A) and peak at position (B) of 583cm-1The intensity of the peak at (c) and the ratio of the two intensities is calculated.
Evaluation methods of removal rate, number of scratches, and removal selectivity: an 8' wafer on which PE-TEOS (plasma enhanced chemical vapor deposition TEOS oxide) was coated to form an oxide film on the entire surface thereof and Si was coated thereon3N4Another 8 "wafer with a nitride film formed on its entire surface was used for CMP polishing performance test. The test conditions and substances used were as follows:
lining: IC1000/SUBAIV (available from Rodel, USA);
film thickness measuring apparatus: Nano-Spec 180 (available from Nano-metrics, USA);
the speed of the workbench: 70rpm
Main shaft rotating speed: 70rpm
Downward pressure: 4psi
Back pressure: 0psi
Slurry supply amount: 100ml/min
Method for measuring residual particles and scratches: an oxide film (PE-TEOS) or a nitride film (Si) is formed on the entire surface using a cerium oxide (ceria) slurry3N4) The removal rate was determined from the change in thickness of the film after polishing after 1 minute of polishing, and scratches were measured using Surfscan SP 1. The polishing performance of each slurry was tested in this manner, and the polishing characteristics were measured after polishing a semi-finished wafer three or more times.
Examples 1 to 4 and comparative examples 1 to 3: the precursor materials for the different particle distributions are listed below, as shown in table 2:
TABLE 2
Preparation example 1: preparation of cerium oxide particles by a single step calcination process
Mixing 800g of carbonCerium acid powder (corresponding to the precursor materials of examples 1 to 4 and comparative examples 1 to 3, respectively) was charged into each container. Heating at a rate of 5 deg.C/min to 800 deg.C, calcining in a tunnel furnace for 4 hr, cooling to gas of 20m3The velocity of/h flows in the direction opposite to the direction of movement of the oven for efficient removal of CO2And (3) as a byproduct, mixing the obtained particles and deionized water (in a mass ratio of 1: 9) in a high-speed mixer for more than 1h, and then grinding the mixture by using a channel grinding process.
The resulting ceria particles were characterized and the results are shown in table 3:
TABLE 3
| Ceria particle size (nm) | Peak ratio | |
| Example 1 | 55 | 88 |
| Example 2 | 50 | 85 |
| Example 3 | 45 | 79 |
| Example 4 | 42 | 83 |
| Comparative example 1 | 51 | 55 |
| Comparative example 2 | 62 | 86 |
| Comparative example 3 | 53 | 40 |
Preparation example 2: preparation of cerium oxide particles by a single step calcination process
The only difference from preparation example 1 was that the calcination temperature was replaced with 780 ℃ and the rest was the same.
Preparation example 3: two-step calcination process for preparing cerium dioxide particles
The difference from preparation example 1 is that cerium carbonate powder was calcined twice in a tunnel furnace, calcined at 750 ℃ for 4 hours, pulverized, and further calcined at 650 ℃ for 4 hours, and the rest were the same.
Effect embodiment: CMP test results
The cerium oxide particles of examples 1 to 4 and comparative examples 1 to 3 were prepared into polishing slurries in the manner of preparation example 1, and were subjected to CMP polishing performance tests, the results of which are shown in table 4 below:
TABLE 4
The above results indicate that the CMP polishing performance is poor when the peak ratio of the ceria particles is not within the range of 70 to 90 in the prepared polishing slurry (e.g., comparative example 1, comparative example 3), or the first particle size (D1) of the precursor material for preparing the ceria particles exceeds 500nm, as reflected in a relatively small selection (silicon oxide RR/silicon nitride RR), a large number of residual particles of the oxide film, and a large number of scratches, which have a fatal influence on semiconductor devices during the fabrication of ultra-highly integrated semiconductors of 0.13 μm or less.
Therefore, controlling the particle peak ratio of the cerium oxide particles and the particle size of the precursor material of the cerium oxide particles within predetermined ranges can allow the polishing slurry to have excellent removal rate and selectivity, and to have the ability to cause no or minimize the number of micro scratches, and to easily obtain desired slurry characteristics.
Claims (10)
1. The application of cerium oxide particles in a polishing process is characterized in that the cerium oxide particles are used as polishing particles of polishing slurry in the polishing process;
the first particle size of the precursor material of the cerium oxide particles is 200-; the Raman spectrum of the cerium oxide particles is contained in 458cm-1Peak sum of (A) and (B) 583cm-1And wherein at 458cm-1Intensity of peak at 583cm-1The ratio of the intensities of the peaks is a peak ratio, and the peak ratio of the cerium oxide particles is 70 to 90.
2. The use of cerium oxide particles in a polishing process according to claim 1, wherein the first particle size of the precursor material of the cerium oxide particles is 220-450 μm;
and/or the cerium oxide particles have a peak ratio of 75 to 90;
and/or collecting a raman spectrum of the cerium oxide particles using a 532nm laser;
and/or the second particle size of the precursor material of the cerium oxide particles is 30-180 μm; the second particle size of the precursor material of the cerium oxide particles is a particle size at which a cumulative particle distribution of the precursor material of the cerium oxide particles is 50%;
and/or the third particle size of the precursor material of the cerium oxide particles is 0.5-3.5 μm; the third particle size of the precursor material of the cerium oxide particles is a particle size at which a cumulative particle distribution of the precursor material of the cerium oxide particles is 99%;
and/or the particle size of the cerium oxide particles is 20-60 nm; the particle size of the cerium oxide particles is a particle size at which the particle cumulative distribution of the cerium oxide particles is 90%;
and/or the precursor material of the cerium oxide particles comprises cerium carbonate;
and/or, the cerium oxide particles are prepared by a non-wet process.
3. Use of cerium oxide particles according to claim 1 in a polishing process, wherein the first particle size of the precursor material of the cerium oxide particles is 226 μ ι η, 289 μ ι η, 330 μ ι η or 410 μ ι η;
and/or the cerium oxide particles have a peak ratio of 79, 83, 85 or 88;
and/or the second particle size of the precursor material of the cerium oxide particles is 60-180 μm, such as 98 μm, 110 μm, 120 μm or 176 μm; the second particle size of the precursor material of the cerium oxide particles is a particle size at which a cumulative particle distribution of the precursor material of the cerium oxide particles is 50%;
and/or the precursor material of the cerium oxide particles has a third particle size of 1-2.5 μm, for example 1.5 μm, 1.9 μm, 2.2 μm or 2.3 μm; the third particle size of the precursor material of the cerium oxide particles is a particle size at which a cumulative particle distribution of the precursor material of the cerium oxide particles is 99%;
and/or the cerium oxide particles have a particle size of 40-60nm, for example 42nm, 45nm, 50nm or 55 nm; the particle size of the cerium oxide particles is a particle size at which the particle cumulative distribution of the cerium oxide particles is 90%.
4. Use of the cerium oxide particles according to claim 1 in a polishing process, wherein the cerium oxide particles are prepared by a preparation method comprising the steps of: preparing cerium dioxide powder from a precursor material of cerium oxide particles through a solid generation step, mixing the cerium dioxide powder with water, and grinding to obtain slurry containing the cerium oxide particles.
5. Use of cerium oxide particles in a polishing process according to claim 4, wherein the preparation process further comprises a pre-treatment step of the precursor material prior to the solid generation step, for example the pre-treatment step comprises drying of the precursor material;
and/or, the mixing is mixing in a mixer rotating at high speed;
and/or the water is deionized water;
and/or the mass ratio of the cerium dioxide powder to the water is 1 (9-49), such as 1: 9;
and/or, the grinding is performed by a dry grinding machine.
6. The use of cerium oxide particles in a polishing process as claimed in claim 4, wherein the solid generation step comprises calcination, preferably at a temperature of 500-1000 ℃, such as 800 ℃, 780 ℃, 750 ℃, 650 ℃ or 600 ℃.
7. Use of cerium oxide particles in a polishing process according to claim 6, wherein the calcination comprises one or more steps, such as a single step calcination, a two step calcination or a three step calcination, such as a single step calcination.
8. Use of cerium oxide particles in a polishing process according to claim 7, wherein when the calcination is a single step calcination, the single step calcination is: subjecting the precursor material of the cerium oxide particles to primary calcination, preferably, subjecting the precursor material of the cerium oxide particles to primary calcination at 750-800 ℃ for 3-10h, for example, at 780 ℃ for 4 h;
and/or, when the calcining is a two-step calcining, the two-step calcining is: subjecting the precursor material of the cerium oxide particles to primary calcination, pulverization or grinding, and secondary calcination, preferably, subjecting the precursor material of the cerium oxide particles to primary calcination for 3-10h at 800 ℃ and pulverization or grinding, and subjecting the precursor material of the cerium oxide particles to secondary calcination for 3-10h at 700 ℃ and 600 ℃ for example, subjecting the precursor material of the cerium oxide particles to calcination for 4h at 750 ℃, grinding, and continuing calcination for 4h at 650 ℃;
and/or, when the calcination is a three-step calcination, the three-step calcination is: subjecting the precursor material of the cerium oxide particles to primary calcination, pulverization or grinding, secondary calcination, pulverization or grinding, and tertiary calcination, preferably, subjecting the precursor material of the cerium oxide particles to primary calcination for 3-10h at 800 ℃ and pulverization or grinding, subjecting the precursor material of the cerium oxide particles to secondary calcination for 3-10h at 700 ℃ and pulverization or grinding, and subjecting the precursor material of the cerium oxide particles to tertiary calcination for 3-10h at 650 ℃ and 550 ℃ for 650 ℃ for 3-10h, for example, subjecting the precursor material of the cerium oxide particles to calcination for 4h at 750 ℃, pulverization, further calcination for 4h at 650 ℃, pulverization, and further calcination for 4h at 600 ℃.
9. The use of the cerium oxide particles in a polishing process according to claim 8, wherein, when the calcination is a two-step calcination or a three-step calcination, the crushing or grinding step employs a classifier, a crusher, or an air jet mill.
10. Use of cerium oxide particles according to any of claims 1 to 9 in a polishing process, wherein the cerium oxide particles are present in the polishing slurry in an amount of 2% to 10%, for example 10%, by mass;
and/or, the polishing slurry is used for polishing the CMP process of the shallow trench isolation process.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI832315B (en) * | 2021-07-08 | 2024-02-11 | 南韓商Ｓｋ恩普士股份有限公司 | Polishing composition for semiconductor process and manufacturing method for polished article |
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| Publication number | Priority date | Publication date | Assignee | Title |
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