CN112670831A - Wavelength locking semiconductor laser - Google Patents
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- CN112670831A CN112670831A CN202011566910.8A CN202011566910A CN112670831A CN 112670831 A CN112670831 A CN 112670831A CN 202011566910 A CN202011566910 A CN 202011566910A CN 112670831 A CN112670831 A CN 112670831A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 131
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- 239000011247 coating layer Substances 0.000 claims description 19
- 238000002310 reflectometry Methods 0.000 claims description 16
- 230000003287 optical effect Effects 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000001228 spectrum Methods 0.000 description 10
- 230000008859 change Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
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- 239000002918 waste heat Substances 0.000 description 3
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- 238000004806 packaging method and process Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
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Abstract
A wavelength-locked semiconductor laser comprising: a polarization beam combiner; the first semiconductor laser is positioned on the first side of the polarization beam combiner and is suitable for outputting a first laser beam, and the first laser beam comprises a first main laser component and a first auxiliary laser component which have mutually vertical polarization states; the second semiconductor laser chip is positioned on the third side of the polarization beam combiner and is suitable for outputting a second laser beam, and the second laser beam comprises a second main laser component and a second auxiliary laser component, wherein the polarization states of the second main laser component and the second auxiliary laser component are perpendicular to each other; the half-wave plate is positioned between the first semiconductor laser and the polarization beam combiner; a reflective element on a second side of the polarization beam combiner; the polarization beam combiner is adapted to combine the first main laser light component and the second main laser light component and exit from a fourth side of the polarization beam combiner. The stability and safety of the wavelength-locked semiconductor laser are improved.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a wavelength-locked semiconductor laser.
Background
The high-power semiconductor laser fiber coupling module is widely applied to the pumping field of fiber laser and solid laser at present due to higher electro-optic conversion efficiency, smaller volume, higher reliability and lower price per watt. In order to improve the brightness of the fiber coupling module as much as possible, a beam combining device is usually used to combine two beams of light with different polarization states, so that the output power is doubled on the premise that the beam quality of the output light beam is not changed. Meanwhile, due to the narrow pumping bandwidth of the gain medium, the fiber coupling module needs to realize narrow wavelength output and extremely small temperature wavelength change, and usually, a volume bragg grating is used for locking the external cavity feedback wavelength to realize the narrowing of the spectrum.
However, the semiconductor laser chip is affected by stress during packaging, the output light beam is difficult to ensure a single polarization state, and a part of the light beam which does not satisfy the polarization beam combination condition leaks from the light leakage direction of the beam combination device and is absorbed by the housing, so that a large amount of waste heat is generated. When the volume Bragg grating is placed in the direction of the beam combining device for outputting the combined laser to perform wavelength locking, the volume Bragg grating is used as an insertion loss device, the final output power can be directly reduced, and meanwhile, the volume Bragg grating can bear laser irradiation with extremely high power density, so that the overall reliability of the optical fiber coupling module is reduced.
Disclosure of Invention
The invention aims to solve the technical problem of poor stability and safety of a semiconductor laser in the prior art.
In order to solve the above-mentioned technical problem, the present invention provides a wavelength-locked semiconductor laser including: a polarization beam combiner having first and second opposing sides and third and fourth opposing sides, a direction from the first side to the second side being perpendicular to a direction from the third side to the fourth side; the first semiconductor laser chip is positioned on the first side of the polarization beam combiner and is suitable for outputting a first laser beam, and the first laser beam comprises a first main laser component and a first auxiliary laser component which have mutually vertical polarization states; the second semiconductor laser chip is positioned on the third side of the polarization beam combiner and is suitable for outputting a second laser beam, and the second laser beam comprises a second main laser component and a second auxiliary laser component, wherein the polarization states of the second main laser component and the second auxiliary laser component are perpendicular to each other; the half-wave plate is positioned between the first semiconductor laser chip and the polarization beam combiner; the reflecting element is positioned on the second side of the polarization beam combiner, is suitable for reflecting the first sub laser component to return to the first semiconductor laser chip along the original optical path, and is also suitable for reflecting the second sub laser component to return to the second semiconductor laser chip along the original optical path; the polarization beam combiner is adapted to combine the first main laser light component and the second main laser light component and exit from a fourth side of the polarization beam combiner.
Optionally, the first main laser component between the first semiconductor laser chip and the half-wave plate is in a horizontal polarization state, and the first sub laser component between the first semiconductor laser chip and the half-wave plate is in a vertical polarization state; the first main laser component between the half-wave plate and the polarization beam combiner is in a vertical polarization state, and the first auxiliary laser component between the half-wave plate and the polarization beam combiner is in a horizontal polarization state; and the second main laser component between the polarization beam combiner and the second semiconductor laser chip is in a horizontal polarization state, and the second auxiliary laser component between the polarization beam combiner and the second semiconductor laser chip is in a vertical polarization state.
Optionally, the polarization beam combiner is a polarization beam splitting cube.
Optionally, the polarization beam combiner is a brewster angle polarizer.
Optionally, the reflective element is a high diffraction efficiency reflective volume bragg grating; the diffraction efficiency of the high-diffraction-efficiency reflective volume Bragg grating is more than 90%.
Optionally, the reflecting element is a narrow-band coated reflecting mirror, the reflectivity of the narrow-band coated reflecting mirror is above 90%, and the wavelength width of light reflected by the narrow-band coated reflecting mirror is less than or equal to 1 nm.
Optionally, the first semiconductor laser chip has a first front cavity surface, the first front cavity surface is suitable for emitting a first laser beam, the first front cavity surface is provided with a first front cavity coating layer, and the reflectivity of the first front cavity coating layer is less than or equal to 2%; the second semiconductor laser chip is provided with a second front cavity surface, the second front cavity surface is suitable for emitting a second laser beam, a second front cavity coating layer is arranged on the second front cavity surface, and the reflectivity of the second front cavity coating layer is less than or equal to 2%.
Optionally, the method further includes: the first fast axis collimating lens and the first slow axis collimating lens are positioned between the first semiconductor laser chip and the half-wave plate and are suitable for sequentially collimating a first laser beam emitted by the first semiconductor laser chip; and the second fast axis collimating lens and the second slow axis collimating lens are positioned between the second semiconductor laser chip and the polarization beam combiner and are suitable for sequentially collimating a second laser beam emitted by the second semiconductor laser chip.
Optionally, the number of the first semiconductor laser chips is a plurality, the first semiconductor laser chips are parallel to the emitting direction of the first laser beam, and the first semiconductor laser chips are arranged in the fast axis direction or the slow axis direction of the first laser beam, so that the first laser beams form a first spatial beam combination; the number of the second semiconductor laser chips is a plurality of, the second semiconductor laser chips are parallel to the emergent direction of the second laser beams, and the second semiconductor laser chips are arranged in the fast axis direction or the slow axis direction of the second laser beams, so that the second laser beams form second space combined beams.
Optionally, the energy ratio of the first main laser component to the first laser beam is greater than or equal to 90%; the second main laser component occupies the energy of the second laser beam by 90% or more.
The technical scheme of the invention has the following advantages:
according to the wavelength-locked semiconductor laser provided by the technical scheme of the invention, the polarization beam combiner is used for combining the first main laser component and the second main laser component together, so that the output beam quality of the output combined laser is higher, and the output power is doubled. The first sub laser component and the second sub laser component are used for realizing wavelength locking and spectrum narrowing, the laser leaked from the polarization beam combiner is effectively used for wavelength locking and spectrum narrowing, a reflecting element is prevented from acting on a light path of the combined laser, and power loss caused by the combined laser is avoided. And secondly, the power borne by the reflecting element for wavelength locking is small, so that the safety of the device is ensured. And thirdly, the first sub laser component and the second sub laser component are effectively utilized, so that the first sub laser component and the second sub laser component are prevented from directly irradiating on a shell of the wavelength locking semiconductor laser to generate a large amount of waste heat, and the pressure of thermal management of the wavelength locking semiconductor laser is reduced. The stability and the safety of the wavelength locking semiconductor laser are ensured.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a wavelength-locked semiconductor laser according to an embodiment of the present invention;
fig. 2 is a schematic diagram of an output spectrum of a polarization beam combiner locked by a bragg grating with high diffraction efficiency and a central wavelength of 976nm, wherein the output spectrum of the polarization beam combiner is obtained by using a high diffraction efficiency volume bragg grating with a diffraction efficiency of 90%.
Detailed Description
An embodiment of the present invention provides a wavelength-locked semiconductor laser, and with reference to fig. 1, the wavelength-locked semiconductor laser includes:
a polarization beam combiner 100, the polarization beam combiner 100 having first and second opposing sides and third and fourth opposing sides, a direction from the first side to the second side being perpendicular to a direction from the third side to the fourth side;
a first semiconductor laser chip 120 located on a first side of the polarization beam combiner 100, where the first semiconductor laser chip 120 is adapted to output a first laser beam a, and the first laser beam a includes a first main laser component and a first sub laser component with mutually perpendicular polarization states;
a second semiconductor laser chip 130 located on a third side of the polarization beam combiner 100, wherein the second semiconductor laser chip 130 is adapted to output a second laser beam B, and the second laser beam B includes a second main laser component and a second sub-laser component with mutually perpendicular polarization states;
a half-wave plate 140 located between the first semiconductor laser chip 120 and the polarization beam combiner 100;
a reflection element 150 located at a second side of the polarization beam combiner 100, wherein the reflection element 150 is adapted to reflect the first sub-laser component back to the first semiconductor laser chip 120 along the original optical path, and the reflection element 150 is further adapted to reflect the second sub-laser component back to the second semiconductor laser chip 130 along the original optical path;
the polarization beam combiner 100 is adapted to combine the first main laser light component and the second main laser light component and emit from a fourth side of the polarization beam combiner 100.
Specifically, the fourth side of the polarization beam combiner 100 emits the combined laser C.
In this embodiment, the polarization beam combiner 100 is used to combine the first main laser component and the second main laser component, so that the output beam quality of the output combined laser C is high and the output power is doubled.
Most of the laser light generated by the first semiconductor laser chip 120 satisfies the polarization beam combining condition, that is, the first main laser light component satisfies the polarization beam combining condition. The initial polarization state of the first main laser component assumes a horizontal polarization state.
The first sub-laser component is generated by the stress of the first semiconductor laser chip 120 during the packaging process. The first secondary laser component does not satisfy the polarization combining condition.
The first main laser component occupies the energy of the first laser beam by 90% or more.
Most of the laser light generated by the second semiconductor laser chip 130 satisfies the polarization beam combining condition, that is, the second main laser light component satisfies the polarization beam combining condition. The initial polarization state of the second main laser component is in a horizontal polarization state.
The second sub-laser component is generated by stress of the second semiconductor laser chip 130 during packaging. The second sub-laser component does not satisfy the polarization beam combination condition.
The second main laser component occupies the energy of the second laser beam by 90% or more.
In this embodiment, the number of the first semiconductor laser chips 120 is described as an example. In other embodiments, the number of the first semiconductor laser chips is several, the emitting directions of the first semiconductor laser chips to the first laser beams are parallel, and the first semiconductor laser chips are arranged in the fast axis direction of the first semiconductor laser chips. The projections of the edges of the adjacent semiconductor laser chips in the plurality of first semiconductor laser chips 120 can be partially overlapped, so that the distance between the adjacent first laser beams is tighter, and finally the power of the combined laser is improved.
In the present embodiment, the number of the second semiconductor laser chips 130 is taken as an example. In other embodiments, the number of the second semiconductor laser chips is several, the emitting directions of the second laser beams by the several second semiconductor laser chips are parallel, and the several second semiconductor laser chips are arranged in the fast axis direction of the second semiconductor laser chips. The projections of the edges of the adjacent semiconductor laser chips in the plurality of second semiconductor laser chips 130 can be partially overlapped, so that the distance between the adjacent second laser beams is tighter, and finally the power of the combined laser is improved.
In this embodiment, the polarization beam combiner 100 is a polarization beam splitting cube. The polarizing beam splitting cube includes a first prism, a second prism, and a polarizing beam splitting film between the first prism and the second prism. One of the first prism and the second prism is a right-angle prism, and the other prism is a right-angle prism or an oblique prism.
In other embodiments, the polarization combiner is a Brewster's angle polarizer.
In one embodiment, the reflective element 150 is a high diffraction efficiency reflective volume bragg grating having a diffraction efficiency of greater than 90%.
In another embodiment, the reflective element 150 is a narrowband coated mirror with a reflectivity above 90%, and the width of the light wavelength reflected by the narrowband coated mirror is less than or equal to 1 nm.
The reflective element 150 is a narrow-band coated mirror, and reflects laser with a characteristic wavelength, so that wavelength locking and output narrowing can be realized finally. The wavelength width of the laser with the characteristic wavelength is less than or equal to 1 nanometer.
In this embodiment, the first main laser component between the first semiconductor laser chip 120 and the half-wave plate 140 is in a horizontal polarization state, and the first sub laser component between the first semiconductor laser chip 120 and the half-wave plate 140 is in a vertical polarization state. Since the laser passes through the half-wave plate 140 to change the bias state of the laser, the first main laser component between the half-wave plate 140 and the polarization beam combiner 100 is in a vertical polarization state, and the first sub laser component between the half-wave plate 140 and the polarization beam combiner 100 is in a horizontal polarization state.
In this embodiment, the second main laser component between the polarization beam combiner 100 and the second semiconductor laser chip 130 is in a horizontal polarization state, and the second sub-laser component between the polarization beam combiner 100 and the second semiconductor laser chip 130 is in a vertical polarization state.
In this embodiment, the polarization beam combiner 100 reflects the first main laser component in the vertical polarization state, and specifically, the polarization beam splitting film reflects the first main laser component in the vertical polarization state, so that the first main laser component exits from the output surface of the polarization beam combiner 100. After entering the polarization beam combiner 100, the second main laser component in the horizontal polarization state exits from the output surface of the polarization beam combiner 100 along the incident direction to the polarization beam combiner 100, that is, after entering the polarization beam combiner 100, the second main laser component in the horizontal polarization state does not change the optical path direction in the polarization beam combiner 100, and after entering the polarization beam combiner 100, the second main laser component in the horizontal polarization state passes through the polarization beam splitting film. This makes the first main laser light component and the second main laser light component both exit from the output surface of the polarization beam combiner 100 after passing through the polarization beam combiner 100, that is, the combined laser light C exits from the fourth side of the polarization beam combiner 100.
In this embodiment, the first sub-laser component in the horizontal polarization state enters the polarization beam combiner 100 and then exits from the light leakage surface of the polarization beam combiner 100 along the incident direction to the polarization beam combiner 100, that is, the light path direction of the first sub-laser component in the horizontal polarization state does not change in the polarization beam combiner 100 after entering the polarization beam combiner 100, the first sub-laser component in the horizontal polarization state passes through the polarization beam splitting film after entering the polarization beam combiner 100, and finally the first sub-laser component in the horizontal polarization state exits from the second side of the polarization beam combiner 100. The first sub-laser component in the horizontal polarization state is emitted from the second side of the polarization beam combiner 100, and then enters the surface of the reflection element 150, the reflection element 150 reflects the first sub-laser component with a specific wavelength, and the first sub-laser component with the specific wavelength returns to the inside of the first semiconductor laser chip 120 along the original optical path, thereby performing wavelength locking and spectrum narrowing of the first laser beam. The reflection of the first sub-laser light component of a specific wavelength by the reflective element 150 is mainly emphasized by the reflection of the first sub-laser light component for a narrow wavelength range, and does not emphasize a specific wavelength value.
The polarization beam combiner 100 reflects the second sub-laser component in the vertical polarization state, and specifically, the polarization beam splitting film reflects the second sub-laser component in the vertical polarization state, so that the second sub-laser component exits from the light leakage surface of the polarization beam combiner 100, that is, the second sub-laser component exits from the second side of the polarization beam combiner 100. The second sub laser component emitted from the second side of the polarization beam combiner 100 is irradiated to the surface of the reflection element 150, and then the reflection element 150 reflects the second sub laser component of a specific wavelength, which returns to the second semiconductor laser chip 130 along the original optical path, thereby performing wavelength locking and spectrum narrowing of the second laser beam. The reflection of the second sub-laser light component of a specific wavelength by the reflection element 150 is mainly emphasized by the reflection of the second sub-laser light component for a narrow wavelength range, without emphasizing a specific wavelength value.
Since the first laser beam is wavelength-locked and spectrally narrowed and the second laser beam is wavelength-locked and spectrally narrowed, the wavelength of the combined laser light C is also locked.
In this embodiment, the first semiconductor laser chip 120 has a first front cavity surface (not shown) and a first back cavity surface (not shown) opposite to each other, the first front cavity surface is suitable for emitting a first laser beam a, the first front cavity surface is provided with a first front cavity coating layer (not shown), the first back cavity surface is provided with a first back cavity coating layer (not shown), the reflectivity of the first back cavity coating layer is greater than 99%, and the reflectivity of the first front cavity coating layer is less than or equal to 2%.
The reflectivity of the prior first front cavity coating is about 5 percent generally. The reflectivity of the first front cavity coating layer in the first semiconductor laser chip 120 is reduced, and the reflectivity of the first front cavity coating layer is less than or equal to 2%, so that the first secondary laser component which is helpful to return is won in mode competition, and a better wavelength locking effect is achieved.
In this embodiment, the second semiconductor laser chip 130 has a second front cavity surface (not shown) and a second back cavity surface (not shown) opposite to each other, the second front cavity surface is suitable for emitting the second laser beam B, the second front cavity surface is provided with a second front cavity coating layer (not shown), the second back cavity surface is provided with a second back cavity coating layer (not shown), the reflectivity of the second back cavity coating layer is greater than 99%, and the reflectivity of the second front cavity coating layer is less than or equal to 2%.
The reflectivity of the existing second front cavity coating layer is about 5 percent generally. The reflectivity of the second front cavity coating layer in the second semiconductor laser chip 130 is reduced, and the reflectivity of the second front cavity coating layer is less than or equal to 2%, so that the second secondary laser component which is helpful to return is won in mode competition, and a better wavelength locking effect is achieved.
The wavelength-locked semiconductor laser further includes: a first fast axis collimating lens (not shown) and a first slow axis collimating lens (not shown) located between the first semiconductor laser chip 120 and the half-wave plate 140, wherein the first fast axis collimating lens and the first slow axis collimating lens are adapted to sequentially collimate a first laser beam emitted from the first semiconductor laser chip; and a second fast axis collimating lens (not shown) and a second slow axis collimating lens (not shown) located between the second semiconductor laser chip 130 and the polarization beam combiner 100, wherein the second fast axis collimating lens and the second slow axis collimating lens are adapted to sequentially collimate a second laser beam emitted from the second semiconductor laser chip.
In one embodiment, the number of the first semiconductor laser chips 120 is several, the emitting directions of the first laser beams by the several first semiconductor laser chips 120 are parallel, and the several first semiconductor laser chips 120 are arranged in the fast axis direction or the slow axis direction of the first laser beams, so that the several first laser beams form a first spatial beam combination.
It should be noted that, when the number of the first semiconductor laser chips 120 is several, the number of the first fast axis collimating lenses is also several, and the number of the first slow axis collimating lenses is also several. And one first semiconductor laser chip 120 corresponds to one first fast axis collimating lens and one first slow axis collimating lens. In a specific embodiment, the first fast axis collimating lenses are arranged in the fast axis direction of the first laser beam and have a slight height difference, for example, the height difference of adjacent first fast axis collimating lenses in the fast axis direction of the first laser beam is 0.5 mm; the first fast axis collimating lenses are also sequentially arranged along the slow axis direction of the first laser beam, and the first slow axis collimating lenses are sequentially arranged along the slow axis direction of the first laser beam. The first fast axis collimating lens is located between the first semiconductor laser chip 120 and the first slow axis collimating lens. The wavelength-locked semiconductor laser further includes: and the first 45-degree reflectors are positioned between the half-wave plate 140 and the first slow-axis collimating lens, and a 45-degree angle is formed between the normal direction of the first 45-degree reflectors and the incident direction of the first laser book incident to the first 45-degree reflectors. The first 45 ° mirror is adapted to irradiate the laser light after being collimated by the first fast axis collimating lens and the first slow axis collimating lens toward the half-wave plate 140. The first 45 ° mirror deflects the optical path of the first laser book by 90 degrees and irradiates the half-wave plate 140. The first 45-degree reflecting mirrors have height difference in the fast axis direction of the first laser beam, so that the first 45-degree reflecting mirrors do not block the laser reflected by the first 45-degree reflecting mirrors on the light path.
In an embodiment, the number of the second semiconductor laser chips 130 is several, the emitting directions of the second laser beams by the several second semiconductor laser chips 130 are parallel, and the several second semiconductor laser chips 130 are arranged in the fast axis direction or the slow axis direction of the second laser beams, so that the several second laser beams form a second spatial beam combination.
In the present embodiment, a plurality of first semiconductor laser chips 120 are arranged in the fast axis direction of the first laser beam, and a plurality of second semiconductor laser chips 130 are arranged in the fast axis direction of the second laser beam as an example.
It should be noted that, when the number of the second semiconductor laser chips 130 is several, the number of the second fast axis collimating lenses is also several, and the number of the second slow axis collimating lenses is also several. And one second semiconductor laser chip 130 corresponds to one second fast axis collimating lens and one second slow axis collimating lens. In a specific embodiment, the plurality of second fast axis collimating lenses are arranged in the fast axis direction of the second laser beam with a slight height difference, for example, the height difference of adjacent second fast axis collimating lenses in the fast axis direction of the second laser beam is 0.5 mm; the second fast axis collimating lenses are also sequentially arranged along the slow axis direction of the second laser beam, and the second slow axis collimating lenses are sequentially arranged along the slow axis direction of the second laser beam. The second fast axis collimating lens is located between the second semiconductor laser chip 130 and the second slow axis collimating lens. The wavelength-locked semiconductor laser further includes: a plurality of second 45-degree reflectors, the second 45-degree reflector is located between the polarization beam combiner 100 and the second slow axis collimating lens, and an angle of 45 degrees is formed between the normal direction of the second 45-degree reflector and the incident direction of the second laser book incident to the second 45-degree reflector. The second 45 ° reflector is adapted to irradiate the laser light collimated by the second fast-axis collimating lens and the second slow-axis collimating lens toward the polarization beam combiner 100. The second 45 ° reflector deflects the optical path of the second laser book by 90 degrees and irradiates the polarization beam combiner 100. The second 45-degree reflecting mirrors have height difference in the fast axis direction of the second laser beam, so that the laser reflected by the second 45-degree reflecting mirrors is not blocked on the light path.
In this embodiment, the first sub-laser component and the second sub-laser component are used to implement wavelength locking and spectrum narrowing, and this part of laser leaked from the polarization beam combiner 100 is effectively used to implement wavelength locking and spectrum narrowing, so as to avoid the reflection element acting on the optical path of the combined laser C and avoid power loss caused by the combined laser C. And secondly, the power borne by the reflecting element for wavelength locking is small, so that the safety of the device is ensured. And thirdly, the first auxiliary laser component and the second auxiliary laser component are effectively utilized, so that the first auxiliary laser component and the second auxiliary laser component are prevented from directly irradiating a shell of the wavelength locking semiconductor laser to generate a large amount of waste heat, the pressure of thermal management of the wavelength locking semiconductor laser is reduced, and the stability and the safety of the wavelength locking semiconductor laser are ensured.
Fig. 2 is a schematic diagram of an output spectrum of a polarization beam combiner (first sub laser component and second sub laser component) locked by a high diffraction efficiency volume bragg grating with a diffraction efficiency of 90% and a center wavelength of 976 nm. The horizontal axis in fig. 2 is Wavelength (Wavelength) in nanometers, and the vertical axis in fig. 2 is relative Intensity (a.u). As can be seen from fig. 2, the wavelength of the combined laser light C is locked in a very narrow region at one end near 976nm, and the relative light intensity of the combined laser light C is high.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A wavelength-locked semiconductor laser, comprising:
a polarization beam combiner having first and second opposing sides and third and fourth opposing sides, a direction from the first side to the second side being perpendicular to a direction from the third side to the fourth side;
the first semiconductor laser chip is positioned on the first side of the polarization beam combiner and is suitable for outputting a first laser beam, and the first laser beam comprises a first main laser component and a first auxiliary laser component which have mutually vertical polarization states;
the second semiconductor laser chip is positioned on the third side of the polarization beam combiner and is suitable for outputting a second laser beam, and the second laser beam comprises a second main laser component and a second auxiliary laser component, wherein the polarization states of the second main laser component and the second auxiliary laser component are perpendicular to each other;
the half-wave plate is positioned between the first semiconductor laser chip and the polarization beam combiner;
the reflecting element is positioned on the second side of the polarization beam combiner, is suitable for reflecting the first sub laser component to return to the first semiconductor laser chip along the original optical path, and is also suitable for reflecting the second sub laser component to return to the second semiconductor laser chip along the original optical path;
the polarization beam combiner is adapted to combine the first main laser light component and the second main laser light component and exit from a fourth side of the polarization beam combiner.
2. A wavelength-locked semiconductor laser as claimed in claim 1 wherein a first main laser component between the first semiconductor laser chip and the half-wave plate is in a horizontally polarized state and a first sub-laser component between the first semiconductor laser chip and the half-wave plate is in a vertically polarized state; the first main laser component between the half-wave plate and the polarization beam combiner is in a vertical polarization state, and the first auxiliary laser component between the half-wave plate and the polarization beam combiner is in a horizontal polarization state;
and the second main laser component between the polarization beam combiner and the second semiconductor laser chip is in a horizontal polarization state, and the second auxiliary laser component between the polarization beam combiner and the second semiconductor laser chip is in a vertical polarization state.
3. The wavelength-locked semiconductor laser of claim 1, wherein the polarization beam combiner is a polarization beam splitting cube.
4. A wavelength-locked semiconductor laser as claimed in claim 1 wherein the polarization beam combiner is a brewster's angle polarizer.
5. The wavelength-locked semiconductor laser of claim 1, wherein the reflective element is a high diffraction efficiency reflective volume bragg grating; the diffraction efficiency of the high-diffraction-efficiency reflective volume Bragg grating is more than 90%.
6. The wavelength-locked semiconductor laser as claimed in claim 1, wherein the reflecting element is a narrow-band coated mirror having a reflectance of 90% or more, and a light wavelength width reflected by the narrow-band coated mirror is 1nm or less.
7. The wavelength-locked semiconductor laser of claim 1, wherein the first semiconductor laser chip has a first front facet adapted to emit a first laser beam, the first front facet having a first front cavity coating disposed thereon, the first front cavity coating having a reflectivity of 2% or less; the second semiconductor laser chip is provided with a second front cavity surface, the second front cavity surface is suitable for emitting a second laser beam, a second front cavity coating layer is arranged on the second front cavity surface, and the reflectivity of the second front cavity coating layer is less than or equal to 2%.
8. The wavelength-locked semiconductor laser of claim 1, further comprising: the first fast axis collimating lens and the first slow axis collimating lens are positioned between the first semiconductor laser chip and the half-wave plate and are suitable for sequentially collimating a first laser beam emitted by the first semiconductor laser chip;
and the second fast axis collimating lens and the second slow axis collimating lens are positioned between the second semiconductor laser chip and the polarization beam combiner and are suitable for sequentially collimating a second laser beam emitted by the second semiconductor laser chip.
9. The wavelength-locked semiconductor laser as claimed in claim 1, wherein the number of the first semiconductor laser chips is several, the first semiconductor laser chips are parallel to the emitting direction of the first laser beams, and the first semiconductor laser chips are arranged in the fast axis direction or the slow axis direction of the first laser beams, so that the first laser beams form a first spatial beam combination;
the number of the second semiconductor laser chips is a plurality of, the second semiconductor laser chips are parallel to the emergent direction of the second laser beams, and the second semiconductor laser chips are arranged in the fast axis direction or the slow axis direction of the second laser beams, so that the second laser beams form second space combined beams.
10. The wavelength-locked semiconductor laser as claimed in claim 1, wherein the first principal laser component occupies an energy proportion of the first laser beam of 90% or more; the second main laser component occupies the energy of the second laser beam by 90% or more.
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| CN202011566910.8A CN112670831A (en) | 2020-12-25 | 2020-12-25 | Wavelength locking semiconductor laser |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113588217A (en) * | 2021-08-03 | 2021-11-02 | 苏州康启环境科技有限公司 | Device and method for measuring density of diffraction grating |
| CN114243452A (en) * | 2022-02-24 | 2022-03-25 | 深圳市星汉激光科技股份有限公司 | Interlocking light path of semiconductor laser |
| CN115128820A (en) * | 2022-08-30 | 2022-09-30 | 中国科学院长春光学精密机械与物理研究所 | Chirp reflection type volume Bragg grating feedback spectrum beam combining device and method |
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| CN107005025A (en) * | 2014-09-19 | 2017-08-01 | Highyag激光技术公司 | Diode laser |
| CN110718848A (en) * | 2019-09-18 | 2020-01-21 | 深圳市星汉激光科技有限公司 | Semiconductor laser device |
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| CN107005025A (en) * | 2014-09-19 | 2017-08-01 | Highyag激光技术公司 | Diode laser |
| CN110718848A (en) * | 2019-09-18 | 2020-01-21 | 深圳市星汉激光科技有限公司 | Semiconductor laser device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113588217A (en) * | 2021-08-03 | 2021-11-02 | 苏州康启环境科技有限公司 | Device and method for measuring density of diffraction grating |
| CN114243452A (en) * | 2022-02-24 | 2022-03-25 | 深圳市星汉激光科技股份有限公司 | Interlocking light path of semiconductor laser |
| CN115128820A (en) * | 2022-08-30 | 2022-09-30 | 中国科学院长春光学精密机械与物理研究所 | Chirp reflection type volume Bragg grating feedback spectrum beam combining device and method |
| CN115128820B (en) * | 2022-08-30 | 2022-11-08 | 中国科学院长春光学精密机械与物理研究所 | Chirp reflection type volume Bragg grating feedback spectrum beam combining device and method |
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