CN112670357A - Ultraviolet/infrared double-color detector and preparation method thereof - Google Patents

Ultraviolet/infrared double-color detector and preparation method thereof Download PDF

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Publication number
CN112670357A
CN112670357A CN202011608657.8A CN202011608657A CN112670357A CN 112670357 A CN112670357 A CN 112670357A CN 202011608657 A CN202011608657 A CN 202011608657A CN 112670357 A CN112670357 A CN 112670357A
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material layer
dimensional material
layer
sio
electrode
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黎大兵
郭龙
贾玉萍
孙晓娟
蒋科
石芝铭
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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Abstract

The invention provides an ultraviolet/infrared double-color detector, comprising: the infrared detector comprises a substrate layer, a BN buffer layer, a BN three-dimensional material layer, an insertion layer and a BN two-dimensional material layer which are sequentially stacked from bottom to top, wherein electrodes are arranged on the BN three-dimensional material layer and the BN two-dimensional material layer, the BN three-dimensional material layer can detect ultraviolet light, the BN two-dimensional material layer can detect infrared light, response to the ultraviolet light is achieved by the aid of the wide bandgap performance of a three-dimensional boron nitride material, the two-dimensional boron nitride material can resonate with the infrared light to generate phonon polarons, conductivity of the material is affected, and accordingly detection of the infrared light is achieved. The boron nitride ultraviolet/infrared double-color detector breaks through the traditional concept of infrared transmission of wide-bandgap semiconductors, and lays a theoretical foundation for realizing infrared detection of wide-bandgap semiconductors.

Description

Ultraviolet/infrared double-color detector and preparation method thereof
Technical Field
The invention relates to the technical field of semiconductor preparation, in particular to an ultraviolet/infrared double-color detector and a preparation method thereof.
Background
Infrared detectors and ultraviolet detectors have been widely used in military and civilian applications. The application of the infrared detector comprises the fields of common infrared induction (such as an induction tap, an induction door, an induction lamp and the like), mineral resource exploration, nondestructive inspection, gas analysis, infrared imaging, fire alarm early warning, infrared accurate guidance, aerial detection, meteorological satellite and the like; ultraviolet detectors have been used in early stages mainly in the military fields of ultraviolet alarm, ultraviolet communication, ultraviolet guidance, and the like, and subsequently, ultraviolet detectors have also gradually appeared in the fields of ultraviolet disinfection, fire detection, ultraviolet curing and polymerization, biomedicine, spectral analysis, particle detection, and the like. However, with the complication of the practical application environment, the continuous increase of the demand of integration level and the rapid development of the infrared interference technology, the monochromatic detector cannot meet the demand of practical application more and more. Therefore, in order to effectively inhibit the influence of the complexity of the background on the detector, improve the detection effect of the detector on the target, reduce the false alarm rate in the early warning, searching and tracking system, improve the performance of the system and the universality on various military and civil platforms, researchers try to integrate the infrared detector and the ultraviolet detector together to form an ultraviolet/infrared double-color integrated detector capable of detecting ultraviolet and infrared bands simultaneously, which is also an important direction for the development of the current photoelectric detector.
At present, because the lattice difference of the commonly used ultraviolet and infrared detection materials is large, the ultraviolet and infrared detection materials are difficult to combine together through heteroepitaxial growth. Generally, ultraviolet/infrared double-color detectors are integrated by physical combination methods such as gluing. The structure of the integration mode is complex, and the miniaturization and the chip formation of the device are not facilitated. Therefore, the search for a homogeneous integrated uv/ir detector is the direction of development of the future bichromatic detectors.
Boron Nitride (BN) is a wide bandgap semiconductor material, which has the advantages of high temperature and high pressure resistance, acid and alkali corrosion resistance, high breakdown electric field, high thermal conductivity, high electron saturation rate, radiation resistance and the likeHas the advantages of good ultraviolet absorption characteristic, the forbidden band width of 5.97eV, corresponding to the deep ultraviolet solar blind waveband, and the absorption coefficient of boron nitride in the waveband is as high as 7 multiplied by 105cm-1(much higher than 2X 10 for AlN Material5cm-1) This makes it a preferred material for making deep ultraviolet photodetectors; meanwhile, the boron nitride can be prepared into a two-dimensional material, the two-dimensional BN material (2D-BN) can resonate with infrared light to generate phonon polarons, and infrared resonance absorption response is realized (the effect is directly observed and confirmed by SNOM). Polarized phonons generated by infrared resonance absorption of the material can propagate along the surface, which is similar to surface plasmons, and the infrared light can be detected by utilizing the influence of the field enhancement effect of the polarized phonons on the conductivity of the material. In order to realize detection current signals in the two-dimensional boron nitride, the two-dimensional boron nitride is doped in advance to obtain free carriers, and infrared detection response is realized by combining the enhancement effect of phonon polarization. The discovery breaks through the traditional concept of the infrared transmission of the wide bandgap semiconductor and lays a theoretical foundation for realizing the infrared detection of the wide bandgap semiconductor.
Disclosure of Invention
Therefore, there is a need to provide a homogeneous integrated uv/ir dual color detector to solve the problems of the existing physically integrated dual color detectors, which overcomes the drawbacks of the prior art.
In order to achieve the purpose, the invention adopts the following technical scheme:
an ultraviolet/infrared dual color detector comprising: the BN buffer layer is arranged on the substrate layer, the BN three-dimensional material layer is arranged on the BN two-dimensional material layer in a stacking mode, the insertion layer is arranged on the BN three-dimensional material layer, the electrodes are arranged on the BN two-dimensional material layer, the BN three-dimensional material layer can detect ultraviolet light, and the BN two-dimensional material layer can detect infrared light.
In some preferred embodiments, the substrate layer is sapphire.
In some preferred embodiments, the BN buffer layer is an AlN material.
In some preferred embodiments, the BN three-dimensional material layer and the BN two-dimensional material layer are both doped n-type.
In some preferred embodiments, the insertion layer is an AlN or GaN wide bandgap semiconductor.
In some preferred embodiments, the electrode is an ohmic electrode material or a schottky electrode material, and the electrode is a metal material capable of forming an ohmic contact with the BN material or a metal material capable of forming a schottky contact with the BN material.
In addition, the invention also provides a preparation method of the ultraviolet/infrared double-color detector, which comprises the following steps:
growing the BN buffer layer and the BN three-dimensional material layer on the substrate layer, and sequentially growing an insertion layer and the BN two-dimensional material layer on the BN three-dimensional material layer;
growing SiO on the BN two-dimensional material layer2A mask on the SiO2Photoetching a mesa graph of the BN two-dimensional material layer on a mask;
removing the SiO outside the mesa pattern of the BN two-dimensional material layer by etching2The table surface of the BN two-dimensional material layer is exposed and is free of SiO2Covering a part of the BN three-dimensional material layer to be etched, and exposing the table top of the BN three-dimensional material layer;
and photoetching electrode patterns on the table board of the BN three-dimensional material layer and the table board of the BN two-dimensional material layer, and evaporating an electrode on the electrode patterns for annealing to obtain the ultraviolet/infrared double-color detector.
In some preferred embodiments, the step of growing the BN buffer layer and the BN three-dimensional material layer on the substrate layer, and sequentially growing the insertion layer and the BN two-dimensional material layer on the BN three-dimensional material layer, specifically:
growing the BN buffer layer on the substrate by using an MOCVD technology, and then sequentially growing the BN three-dimensional material layer, the insertion layer and the BN two-dimensional material layer to finish the preparation of the epitaxial material of the bicolor detector.
In some preferred embodiments, SiO is grown on the BN two-dimensional material layer2A mask on the SiO2Photoetching the mesa pattern of the BN two-dimensional material layer on a maskIn the step, the method specifically comprises the following steps:
growing SiO on the outermost layer of the epitaxial material of the bicolor detector by using PECVD technology2A mask layer formed on the SiO layer by photolithography2And photoetching a mesa pattern of the BN two-dimensional material layer on the mask layer.
In some preferred embodiments, there is no SiO in the region covered by the photoresist except the mesa pattern of the BN two-dimensional material layer removed by etching2The table surface of the BN two-dimensional material layer is exposed and is free of SiO2Covering a part of the BN three-dimensional material layer to be etched to expose the table top of the BN three-dimensional material layer; the method specifically comprises the following steps:
removing the SiO of the region without the photoresist covering outside the mesa pattern of the BN two-dimensional material layer by RIE etching2Transferring the mesa pattern to SiO2A mask layer leaking out of the mesa structure; removing the residual photoresist on the mesa pattern by acetone, and removing SiO by ICP technique2Etching the covering region to the BN three-dimensional material layer to expose the table top of the BN three-dimensional material layer, and removing SiO on the table top of the BN three-dimensional material layer by using HF2And finishing the preparation of the device table board.
In some preferred embodiments, in the step of obtaining the ultraviolet/infrared two-color detector after performing photolithography to obtain the electrode patterns on the table top of the BN three-dimensional material layer and the BN two-dimensional material layer and performing evaporation electrode annealing on the electrode patterns, the method specifically comprises:
preparing a photoresist mask pattern of an electrode on the BN three-dimensional material layer and the BN two-dimensional material layer by utilizing a photoetching technology, and evaporating the electrode on the electrode pattern with photoresist as a mask by utilizing an electron beam evaporation technology to ensure that the BN three-dimensional material layer and the BN two-dimensional material layer are directly contacted with the electrode;
and annealing the electrode in a nitrogen atmosphere to obtain the ultraviolet/infrared double-color detector.
The invention adopts the technical scheme that the method has the advantages that:
the invention provides an ultraviolet/infrared double-color detector, comprising: the ultraviolet/infrared double-color detector provided by the invention has the advantages that the detector is prepared by utilizing the BN three-dimensional material layer and the BN two-dimensional material layer through homogeneous integration, the double-color detection function is realized, and the problems caused by heterogeneous materials and system integration are avoided. The invention has the advantages of realizability, innovation, simple process and wide application prospect.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an ultraviolet/infrared two-color detector according to an embodiment of the present invention.
Fig. 2 is a flowchart illustrating steps of an ultraviolet/infrared two-color detector according to a second embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
Referring to fig. 1, a schematic structural diagram of an ultraviolet/infrared two-color detector according to an embodiment of the present invention is shown, including: the substrate layer 110, the BN buffer layer 120, the BN three-dimensional material layer 130, the insertion layer 140 and the BN two-dimensional material layer 150 are sequentially stacked from bottom to top, electrodes 160 are arranged on the BN three-dimensional material layer 130 and the BN two-dimensional material layer 150, the BN three-dimensional material layer 130 can detect ultraviolet light, and the BN two-dimensional material layer 150 can detect infrared light.
In some preferred embodiments, the substrate layer 110 is sapphire. It is understood that the substrate layer 110 is not limited to sapphire, but may be an ultra-wide band gap material or an insulator material with a band gap larger than that of BN material.
In some preferred embodiments, the BN buffer layer 120 is an AlN material.
In practice, the BN buffer layer 120 may be epitaxially grown on the substrate layer 110 by Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), or magnetron sputtering. It can be understood that the buffer layer has the function of releasing the stress generated by the lattice mismatch between the substrate and the epitaxial material, and improving the quality of the epitaxial material.
In some preferred embodiments, the BN three-dimensional material layer 130 is doped n-type and grown on the BN buffer layer 120 by Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE) or magnetron sputtering, which is advantageous for detecting the photoconductive change of the device material.
In some preferred embodiments, the insertion layer 140 is an AlN or GaN wide bandgap semiconductor.
It is understood that the insertion layer 140 is not limited to AlN or GaN, and other wide bandgap semiconductors may be used, and is epitaxially grown on the BN three-dimensional material layer 130 by Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), or magnetron sputtering. Under the action of the insertion layer 140, the BN three-dimensional material layer 130 and the BN two-dimensional material layer 140 can be distinguished, ultraviolet light is absorbed, infrared light is transmitted, and it is ensured that a detection signal of the BN two-dimensional material layer 140 is an infrared detection signal.
In some preferred embodiments, the BN two-dimensional material layer 150 is grown on the insertion layer 140 by Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE) or magnetron sputtering using n-type doping, which facilitates detection of photoconductive changes in the device material.
In some preferred embodiments, the electrode 160 is an ohmic electrode material or a schottky electrode material, and the electrode is a metal material capable of forming an ohmic contact with the BN material or a metal material capable of forming a schottky contact with the BN material.
Specifically, the ohmic electrode material may be the same kind of metal or alloy capable of forming ohmic contact with BN, such as Pt, Ti/Al/Ni/Au; the schottky electrode material is a metal material capable of forming schottky contact with BN, such as Ni/Au.
It is understood that the electrode 160 can be designed as a two-terminal electrode or an interdigital electrode, and can be prepared by electron beam evaporation or thermal evaporation.
The invention provides an ultraviolet/infrared double-color detector, comprising: the ultraviolet/infrared double-color detector provided by the invention has the advantages that the detector is prepared by utilizing the BN three-dimensional material layer and the BN two-dimensional material layer through homogeneous integration, the double-color detection function is realized, the problems caused by heterogeneous materials and system integration are avoided, the process is simple, and the application prospect is wide.
Example two
Referring to fig. 2, a method for manufacturing an ultraviolet/infrared dual color detector according to a second embodiment of the present invention includes the following steps:
step S110: the BN buffer layer 120 and the BN three-dimensional material layer 130 are grown on the substrate layer 110, and the insertion layer 140 and the BN two-dimensional material layer 150 are sequentially grown on the BN three-dimensional material layer 130.
Specifically, a BN buffer layer 120 is grown on a C-plane sapphire substrate layer by using an MOCVD technology, and then an n-type doped BN three-dimensional material layer 130, an undoped insertion layer (AlN layer 140) and an n-type doped BN two-dimensional material layer 150 are sequentially grown, so that the preparation of the epitaxial material of the ultraviolet/infrared double-color integrated conductivity type detector is completed.
Step S120: growing SiO on the BN two-dimensional material layer 1502A mask on the SiO2The mesa pattern of the BN two-dimensional material layer 150 is photo-etched on a mask.
In some preferred embodiments, the SiO is grown on the outermost layer of the epitaxial material of the bichromatic detector by using PECVD technology2A mask layer formed on the SiO layer by photolithography2And photoetching a mesa pattern of the BN two-dimensional material layer 150 on the mask layer.
Specifically, a layer of SiO grows on the outermost layer of the epitaxial material of the device by using PECVD technology2Masking, using photolithographic techniques, on SiO2And photoetching a table-board pattern of the BN two-dimensional material layer 150 on the mask, wherein positive and negative photoresist are selected according to the design of a pattern window of a photoetching board, and the effect of removing the photoresist in the table-board area except the table board after development is realized.
Step S130: removing the SiO outside the mesa pattern of the BN two-dimensional material layer 150 by etching2The mesa of the BN two-dimensional material layer 150 is exposed and will be SiO-free2Covering a part of the BN three-dimensional material layer 130 by etching, and exposing the table top of the BN three-dimensional material layer 130;
specifically, the SiO outside the mesa without the photoresist coverage is removed by RIE etching2Transferring the mesa pattern to SiO2Mask layer, leaking mesa structure, removing residual photoresist on mesa with acetone, and removing SiO by ICP technique2The cap region is etched to the BN three-dimensional material layer 130 and HF is used to remove SiO from the mesa2And finishing the preparation of the device table board.
Step S140: and photoetching electrode patterns on the table top of the BN three-dimensional material layer 130 and the table top of the BN two-dimensional material layer 150, and evaporating an electrode on the electrode patterns for annealing to obtain the ultraviolet/infrared double-color detector.
In some preferred embodiments, a photoresist mask pattern of an electrode is prepared on the BN three-dimensional material layer 130 and the BN two-dimensional material layer 150 by using a photolithography technique, and an electrode is evaporated on the electrode pattern having the photoresist as a mask by using an electron beam evaporation technique, so that the BN three-dimensional material layer 130 and the BN two-dimensional material layer 150 are directly in contact with the electrode; and annealing the electrode in a nitrogen atmosphere to obtain the ultraviolet/infrared double-color detector.
It can be understood that, by using the photolithography technique, the photoresist mask patterns of the electrodes are prepared on the BN three-dimensional material layer 130 and the BN two-dimensional material layer 150, and the selection of the positive and negative photoresists is determined according to the pattern window of the electrode photolithography mask, so as to achieve the effects of removing the photoresist in the electrode pattern region and retaining the photoresist in the non-electrode region after development.
Further, by using an electron beam evaporation technology, an ohmic contact electrode is evaporated on an electrode pattern with photoresist as a mask, the thickness of the ohmic contact electrode is 10-300 nanometers, the BN three-dimensional material layer 130 and the BN two-dimensional material layer 150 are directly contacted with metal at the position of a photoresist mask pattern window, and the photoresist is contacted with the metal at the position shielded by the photoresist; and dissolving the photoresist by using a Lift Off technology, wherein an acetone solution is selected as a dissolving solution, so that the photoresist and the metal covered on the upper surface of the photoresist fall Off.
Further, the ohmic contact electrode is annealed in a nitrogen atmosphere using a rapid annealing furnace, and the annealing temperature and time are determined by the kind of the electrode metal.
The invention provides a preparation method of an ultraviolet/infrared double-color detector, and the ultraviolet/infrared double-color detector prepared by the method comprises the following steps: the ultraviolet/infrared double-color detector provided by the invention has the advantages that the detector is prepared by utilizing the BN three-dimensional material layer and the BN two-dimensional material layer through homogeneous integration, the double-color detection function is realized, and the problems caused by heterogeneous materials and system integration are avoided. The invention has the advantages of realizability, innovation, simple process and wide application prospect.
Of course, the ultraviolet/infrared two-color detector of the present invention may have various changes and modifications, and is not limited to the specific structure of the above-described embodiments. In conclusion, the scope of the present invention should include those changes or substitutions and modifications which are obvious to those of ordinary skill in the art.

Claims (11)

1. An ultraviolet/infrared two-color detector, comprising: the BN buffer layer is arranged on the substrate layer, the BN three-dimensional material layer is arranged on the BN two-dimensional material layer in a stacking mode, the insertion layer is arranged on the BN three-dimensional material layer, the electrodes are arranged on the BN two-dimensional material layer, the BN three-dimensional material layer can detect ultraviolet light, and the BN two-dimensional material layer can detect infrared light.
2. The uv/ir bi-color detector of claim 1, wherein the substrate layer is sapphire.
3. The uv/ir dual color detector of claim 1, wherein the BN buffer layer is an AlN material.
4. The uv/ir bi-color detector of claim 1, wherein the BN three-dimensional material layer and the BN two-dimensional material layer are each doped n-type.
5. The uv/ir dual color detector of claim 1, wherein the insertion layer is an AlN or GaN wide bandgap semiconductor.
6. The uv/ir two-color detector according to claim 1, wherein the electrode is an ohmic electrode material or a schottky electrode material, and the electrode is a metal material capable of forming an ohmic contact with the BN material or a metal material capable of forming a schottky contact with the BN material.
7. A method of making an ultraviolet/infrared bi-color detector as claimed in claim 1, comprising the steps of:
growing the BN buffer layer and the BN three-dimensional material layer on the substrate layer, and sequentially growing an insertion layer and the BN two-dimensional material layer on the BN three-dimensional material layer;
growing SiO on the BN two-dimensional material layer2A mask on the SiO2Photoetching a mesa graph of the BN two-dimensional material layer on a mask;
removing the SiO outside the mesa pattern of the BN two-dimensional material layer by etching2The table surface of the BN two-dimensional material layer is exposed and is free of SiO2Covering a part of the BN three-dimensional material layer to be etched, and exposing the table top of the BN three-dimensional material layer;
and photoetching electrode patterns on the table board of the BN three-dimensional material layer and the table board of the BN two-dimensional material layer, and evaporating an electrode on the electrode patterns for annealing to obtain the ultraviolet/infrared double-color detector.
8. The method for manufacturing an ultraviolet/infrared two-color detector according to claim 7, wherein the step of growing the BN buffer layer and the BN three-dimensional material layer on the substrate layer, and sequentially growing the insertion layer and the BN two-dimensional material layer on the BN three-dimensional material layer, specifically comprises:
growing the BN buffer layer on the substrate by using an MOCVD technology, and then sequentially growing the BN three-dimensional material layer, the insertion layer and the BN two-dimensional material layer to finish the preparation of the epitaxial material of the bicolor detector.
9. The method of claim 8, wherein the BN two-dimensional material layer is grown with SiO, and wherein the bi-dimensional uv/ir detector is made of a material with SiO-si-c-s-2A mask on the SiO2The step of photoetching the mesa graph of the BN two-dimensional material layer on the mask specifically comprises the following steps:
growing SiO on the outermost layer of the epitaxial material of the bicolor detector by using PECVD technology2A mask layer formed on the SiO layer by photolithography2And photoetching a mesa pattern of the BN two-dimensional material layer on the mask layer.
10. The method of claim 9, wherein there is no SiO area covered by photoresist outside the mesa pattern of the BN two-dimensional material layer removed by etching2The table surface of the BN two-dimensional material layer is exposed and is free of SiO2Covering a part of the BN three-dimensional material layer to be etched to expose the table top of the BN three-dimensional material layer; the method specifically comprises the following steps:
removing the SiO of the region without the photoresist covering outside the mesa pattern of the BN two-dimensional material layer by RIE etching2Transferring the mesa pattern to SiO2A mask layer leaking out of the mesa structure; removing the residual photoresist on the mesa pattern by acetone, and removing SiO by ICP technique2Etching the covering region to the BN three-dimensional material layer to expose the table top of the BN three-dimensional material layer, and removing SiO on the table top of the BN three-dimensional material layer by using HF2And finishing the preparation of the device table board.
11. The method according to claim 10, wherein in the step of obtaining the ultraviolet/infrared two-color detector by photolithography of the electrode patterns on the mesa of the BN three-dimensional material layer and the BN two-dimensional material layer and evaporation of electrode annealing on the electrode patterns, the method specifically comprises:
preparing a photoresist mask pattern of an electrode on the BN three-dimensional material layer and the BN two-dimensional material layer by utilizing a photoetching technology, and evaporating the electrode on the electrode pattern with photoresist as a mask by utilizing an electron beam evaporation technology to ensure that the BN three-dimensional material layer and the BN two-dimensional material layer are directly contacted with the electrode;
and annealing the electrode in a nitrogen atmosphere to obtain the ultraviolet/infrared double-color detector.
CN202011608657.8A 2020-12-30 2020-12-30 Ultraviolet/infrared double-color detector and preparation method thereof Pending CN112670357A (en)

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CN108847435A (en) * 2018-04-27 2018-11-20 华灿光电(苏州）有限公司 A kind of LED epitaxial slice and preparation method thereof
CN110649108A (en) * 2019-09-27 2020-01-03 中国科学院长春光学精密机械与物理研究所 Ultraviolet/infrared double-color detector based on boron nitride
CN111370508A (en) * 2020-03-18 2020-07-03 中国科学院长春光学精密机械与物理研究所 BN-based photoconductive homogeneous integrated ultraviolet/infrared two-color detector and preparation method thereof
CN111952382A (en) * 2020-08-11 2020-11-17 中国科学院长春光学精密机械与物理研究所 Photovoltaic ultraviolet infrared double-color detector and processing method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1825539A (en) * 2005-02-22 2006-08-30 中国科学院半导体研究所 Method for growing non-crack III family nitride on silicon substrate
CN101872798A (en) * 2010-05-19 2010-10-27 中国科学院半导体研究所 Ultraviolet and infrared double-color detector and manufacturing method thereof
US20150243494A1 (en) * 2014-02-25 2015-08-27 Texas Instruments Incorporated Mechanically robust silicon substrate having group iiia-n epitaxial layer thereon
CN108847435A (en) * 2018-04-27 2018-11-20 华灿光电(苏州）有限公司 A kind of LED epitaxial slice and preparation method thereof
CN110649108A (en) * 2019-09-27 2020-01-03 中国科学院长春光学精密机械与物理研究所 Ultraviolet/infrared double-color detector based on boron nitride
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Application publication date: 20210416