CN112670331B - Organic light-emitting display panel, preparation method of packaging layer of organic light-emitting display panel and display device - Google Patents
Organic light-emitting display panel, preparation method of packaging layer of organic light-emitting display panel and display device Download PDFInfo
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Abstract
The embodiment of the application provides an organic light-emitting display panel, wherein an encapsulation layer comprises a first inorganic layer, a second inorganic layer and an organic film layer positioned between the first inorganic layer and the second inorganic layer; the first inorganic layer comprises a first inorganic layer far away from the organic film layer and a second inorganic layer close to the organic film layer, and the thickness of the first inorganic layer is larger than that of the first inorganic layer; the second inorganic layer comprises a second first inorganic layer close to the organic film layer and a second inorganic layer far away from the organic film layer, and the thickness of the second first inorganic layer is larger than that of the second inorganic layer. In the organic light-emitting display panel provided by the embodiment of the application, the whole thickness of the packaging layer can ensure that the packaging layer has good capacity of isolating external water vapor and oxygen; meanwhile, the inorganic layers on the two sides of the organic film layer are formed by stacking the sub-film layers with gradually changed thicknesses, and the internal stress of the organic film layer is reduced by reducing the thicknesses of the sub-film layers.
Description
[ technical field ] A method for producing a semiconductor device
The present disclosure relates to the field of display technologies, and in particular, to an organic light emitting display panel, a display device, and a method for manufacturing an encapsulation layer of the organic light emitting display panel.
[ background of the invention ]
Organic light emitting display technology is becoming a mainstream technology in the display field due to its excellent display effect. The organic light emitting display includes an organic light emitting material layer as an active light emitting display, and the stability of the organic light emitting material is one of the main factors affecting the performance of the organic light emitting display. In order to protect the organic light emitting material layer in the organic light emitting display from being corroded by external oxygen, water vapor, etc., a thin film encapsulation layer needs to be arranged on the organic light emitting material layer.
The thin film encapsulation layer includes inorganic layers, and the inorganic layers have a larger thickness and a higher compactness, so that the encapsulation layer can effectively isolate external oxygen, water vapor and the like. However, when the thickness of the thin film encapsulation layer is large and the compactness is high, the internal stress of the thin film encapsulation layer becomes large, and cracks are easily generated, and the problem is particularly obvious in the flexible organic light emitting display screen and the foldable organic light emitting display screen.
[ summary of the invention ]
In view of the above, embodiments of the present application provide an organic light emitting display panel, a display device and a method for preparing an encapsulation layer of an organic light emitting display panel to solve the above problems.
In a first aspect, an embodiment of the present application provides an organic light emitting display panel, including an encapsulation layer, where the encapsulation layer includes a first inorganic layer, an organic film layer, and a second inorganic layer, and the organic film layer is located between the first inorganic layer and the second inorganic layer; the first inorganic layer comprises a first inorganic layer and a first second inorganic layer, the first second inorganic layer is close to the organic film layer relative to the first inorganic layer, and the thickness of the first second inorganic layer is larger than that of the first inorganic layer; the second inorganic layer comprises a second first inorganic layer and a second inorganic layer, the second first inorganic layer is close to the organic film layer relative to the second inorganic layer, and the thickness of the second first inorganic layer is larger than that of the second inorganic layer.
In one implementation form of the first aspect, the first inorganic layer of the first type and the second inorganic layer of the first type are the same material, and the first inorganic layer of the second type and the second inorganic layer of the second type are the same material.
In one implementation manner of the first aspect, the first inorganic layer of the first kind, the second inorganic layer of the first kind, the first inorganic layer of the second kind, and the second inorganic layer of the second kind are all silicon nitride layers.
In one implementation manner of the first aspect, the first inorganic layer further includes a first third inorganic layer, the first third inorganic layer is located on a side of the first second inorganic layer away from the first inorganic layer, and a thickness of the first third inorganic layer is greater than a thickness of the first second inorganic layer; the second inorganic layer also comprises a second third inorganic layer, the second third inorganic layer is positioned on one side of the second inorganic layer far away from the second first inorganic layer, and the thickness of the second third inorganic layer is less than that of the second inorganic layer.
In one implementation manner of the first aspect, the thickness of the first inorganic layer of the first kind and the thickness of the third inorganic layer of the second kind are both 0.2 μm, the thickness of the first inorganic layer of the first kind and the thickness of the second inorganic layer of the second kind are both 0.3 μm, and the thickness of the first inorganic layer of the first kind and the thickness of the first inorganic layer of the second kind are both 0.5 μm.
In a second aspect, embodiments of the present application provide a display device including the organic light emitting display panel as provided in the first aspect.
In a third aspect, an embodiment of the present application provides a method for preparing an encapsulation layer of an organic light-emitting display panel, for preparing the encapsulation layer in the organic light-emitting display panel provided in the first aspect, including sequentially preparing a first inorganic layer, preparing an organic film layer, and preparing a second inorganic layer; preparing a first inorganic layer by adopting a chemical vapor deposition method, and depositing a second inorganic layer by adopting a chemical vapor deposition method; the first inorganic layer is close to the organic film layer relative to the first inorganic layer, and the thickness of the first inorganic layer is larger than that of the first inorganic layer; the second type first inorganic layer is close to the organic film layer relative to the second type second inorganic layer, and the thickness of the second type first sub-inorganic layer is larger than that of the second type second inorganic layer.
In one implementation of the third aspect, the first type of first inorganic layer is the same as the first type of second inorganic layer, and the second type of first inorganic layer is the same as the second type of second inorganic layer.
In one implementation form of the third aspect, the first inorganic layer of the first type, the second inorganic layer of the first type, the first inorganic layer of the second type, and the second inorganic layer of the second type are all silicon nitride layers.
In one implementation of the third aspect, the preparing the first type of inorganic layer further includes, in situ annealing the first type of first inorganic layer after depositing the first type of first inorganic layer, and in situ annealing the first type of second inorganic layer after depositing the first type of second inorganic layer; the preparing the second type of inorganic layer further includes in-situ annealing the second type of first inorganic layer after depositing the second type of first inorganic layer, and in-situ annealing the second type of second inorganic layer after depositing the second type of second inorganic layer.
In one implementation manner of the third aspect, the reaction gases for depositing the first inorganic layer of the first type, for depositing the second inorganic layer of the first type, for depositing the first inorganic layer of the second type, and for depositing the second inorganic layer of the second type are silane and ammonia; the protective gas for in-situ annealing the first inorganic layer, in-situ annealing the second inorganic layer and in-situ annealing the second inorganic layer is nitrogen.
In one implementation manner of the third aspect, the temperatures for depositing the first inorganic layer and performing in-situ annealing on the first inorganic layer are the same, and the temperatures for depositing the second inorganic layer and performing in-situ annealing on the second inorganic layer are the same; the temperatures for depositing the second type of first inorganic layer and in-situ annealing the second type of first inorganic layer are the same, and the temperatures for depositing the second type of second inorganic layer and in-situ annealing the second type of second inorganic layer are the same.
In one implementation of the third aspect, the preparing the first inorganic layer further includes depositing a third inorganic layer of the first type by chemical vapor deposition, and the preparing the second inorganic layer further includes depositing a third inorganic layer of the second type by chemical vapor deposition; the first type third inorganic layer is positioned on one side of the first type second inorganic layer far away from the first type first inorganic layer, and the thickness of the first type third inorganic layer is larger than that of the first type second inorganic layer; the second type third inorganic layer is positioned on one side of the second type second inorganic layer far away from the second type first inorganic layer, and the thickness of the second type third inorganic layer is smaller than that of the second type second inorganic layer.
In one implementation manner of the third aspect, the thickness of the first inorganic layer of the first kind and the thickness of the third inorganic layer of the second kind are both 0.2 μm, the thickness of the first inorganic layer of the first kind and the thickness of the second inorganic layer of the second kind are both 0.3 μm, and the thickness of the first inorganic layer of the first kind and the thickness of the first inorganic layer of the second kind are both 0.5 μm.
In the embodiment of the application, the first inorganic layer and the second inorganic layer formed by stacking the multiple inorganic sub-film layers still have larger film thicknesses, so that the packaging layer has good capacity of isolating external water vapor and oxygen; meanwhile, the thickness of the sub-film layer positioned on any side of the organic film layer is smaller, so that the internal stress of the inorganic layer is reduced, and the risk of cracks generated in the packaging layer is reduced; and the plurality of sub-film layers in the first inorganic layer and the second inorganic layer respectively positioned on one side of the organic film layer are sequentially stacked, so that each sub-film layer can be prepared in steps in the same equipment and environment, and additional cost is not generated. The thicker the sub-film layer closer to the organic film layer in the first inorganic layer and the second inorganic layer is, the larger the thickness of the sub-film layer is, the stress in the sub-film layers with relatively larger thicknesses is released through the organic film layer; in addition, the inorganic sub-film layer in the encapsulation layer near the surface has the smallest thickness, that is, the internal stress thereof is relatively small, so that the risk of cracking when the organic light emitting display panel is bent or bent is reduced.
[ description of the drawings ]
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic diagram of an organic light emitting display panel according to an embodiment of the present disclosure;
fig. 2 is a detailed schematic diagram of an encapsulation layer in an organic light emitting display panel according to an embodiment of the present disclosure;
fig. 3 is a schematic detail view of an encapsulation layer in another organic light emitting display panel according to an embodiment of the present disclosure;
FIG. 4 is a diagram illustrating a stress simulation result of each film layer of an organic light emitting display panel in the prior art;
fig. 5 is a schematic diagram illustrating a stress simulation result of each film layer of an organic light emitting display panel according to an embodiment of the present disclosure;
fig. 6 is a schematic view of a display device according to an embodiment of the present application;
fig. 7 is a schematic flowchart of an encapsulation layer of an organic light emitting display panel according to an embodiment of the present disclosure;
fig. 8 is a schematic flow chart of a process for manufacturing an encapsulation layer according to an embodiment of the present disclosure;
fig. 9 is a schematic flow chart of another process for manufacturing an encapsulation layer according to an embodiment of the present disclosure.
[ detailed description ] A
For better understanding of the technical solutions of the present application, the following detailed descriptions of the embodiments of the present application are provided with reference to the accompanying drawings.
It should be understood that the embodiments described are only a few embodiments of the present application, and not all embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort belong to the protection scope of the present application.
The terminology used in the embodiments of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in the examples of this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It should be understood that the term "and/or" as used herein is merely one type of association that describes an associated object, meaning that three relationships may exist, e.g., a and/or B may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" herein generally indicates that the former and latter related objects are in an "or" relationship.
In the description herein, it is to be understood that the terms "substantially", "approximately", "about", "approximately", "substantially" and the like in the claims and the examples are intended to be inclusive and mean that the term "substantially" may be interpreted as an alternative to an exact value within a reasonable process operating range or tolerance.
It should be understood that although the terms first, second, third, etc. may be used to describe the inorganic layers in the embodiments of the present application, the inorganic layers should not be limited to these terms. These terms are only used to distinguish the inorganic layers from each other. For example, a first inorganic layer may also be referred to as a second inorganic layer, and similarly, a second inorganic layer may also be referred to as a first inorganic layer, without departing from the scope of embodiments herein.
The applicant provides a solution to the problems of the prior art through intensive research.
The embodiment of the application provides an organic light-emitting display panel, a preparation method of an encapsulation layer of the organic light-emitting display panel and a display device.
Fig. 1 is a schematic view of an organic light emitting display panel according to an embodiment of the present disclosure.
As shown in fig. 1, the organic light emitting display panel provided in the embodiment of the present application includes a thin film transistor layer DF, a light emitting layer PF and an encapsulation layer 10 stacked along a thickness direction Z thereof, wherein the thin film transistor layer DF, the light emitting layer PF and the encapsulation layer 10 are located on the same side of a substrate 21.
Thin-film-transistor layer DF includes a plurality of thin-film transistors DI, and at least two thin-film transistors DI may constitute a pixel circuit.
The light-emitting layer PF includes a plurality of organic light-emitting devices EL including an anode, a cathode, and an organic light-emitting material layer disposed between the anode and the cathode. The anode or the cathode of the organic light emitting device EL is electrically connected to an output terminal of the pixel circuit, and the pixel circuit may supply a current or a voltage required for light emission to the organic light emitting device EL.
The encapsulating layer 10 is disposed on a side of the light emitting layer PF away from the thin-film transistor layer DF, and is configured to encapsulate the light emitting layer PF, so as to prevent water vapor, oxygen, and the like outside the organic light emitting display panel from eroding the organic light emitting material layer in the light emitting layer PF.
In order to ensure that the organic light emitting display panel, especially the flexible organic light emitting display panel, has good performance of isolating external water vapor and oxygen, along the thickness direction Z of the organic light emitting display panel, the encapsulation layer 10 is a thin film encapsulation and includes a first inorganic layer 11, a second inorganic layer 12 and an organic film layer 13, wherein the organic film layer 13 is located between the first inorganic layer 11 and the second inorganic layer 12.
In addition, the organic light emitting display panel may further include a touch layer SF, and the touch layer SF may include a touch electrode and/or a touch signal line TL for implementing a touch function. The touch layer SF may be located between the encapsulation layer 10 and the light emitting layer PF as shown in fig. 1, and in one implementation, the touch layer SF may be shared with a part of the conductive film layer in the thin film transistor layer DF and/or the light emitting layer PF; the touch layer SF may also be located on a side of the package layer 10 away from the light emitting layer PF, so that the package layer 10 may provide a flat bearing surface for the touch layer SF, thereby ensuring reliability of touch performance of the touch layer SF.
Fig. 2 is a schematic detail view of an encapsulation layer in an organic light emitting display panel according to an embodiment of the present disclosure.
In the embodiment of the present application, the first inorganic layer 11 and the second inorganic layer 12 on both sides of the organic film layer 13 respectively include at least two sub-film layers, and the thickness of the sub-film layer farther from the organic film layer 13 is smaller.
As shown in fig. 2, in the thickness direction Z of the organic light emitting display panel, the first inorganic layer 11 includes a first inorganic layer 111 and a first inorganic layer 112, the second inorganic layer 12 includes a second inorganic layer 121 and a second inorganic layer 122, and the first inorganic layer 112 is close to the organic film layer 13 with respect to the first inorganic layer 111, and the second inorganic layer 122 is far from the organic film layer 13 with respect to the second inorganic layer 121.
The thickness of the first-type second inorganic layer 112 closer to the organic film layer 13 in the first-type inorganic layer 11 is greater than the thickness of the first-type first inorganic layer 111 farther from the organic film layer 13, and the thickness of the second-type first inorganic layer 121 closer to the organic film layer 13 in the second-type inorganic layer 12 is greater than the thickness of the second-type second inorganic layer 122 farther from the organic film layer 13. As shown in fig. 2, if the thickness of the first inorganic layer 111 is d11, the thickness of the first inorganic layer 112 is d12, the thickness of the second inorganic layer 121 is d21, and the thickness of the second inorganic layer 122 is d22, d11 < d12, and d22 < d 21.
In order to ensure that the package layer 10 can play a good role in isolating external water vapor and oxygen, the inorganic film layers included in the package layer 10 in the prior art are all compact and thick films, so that the internal stress of the inorganic film layer is large, and cracks are easy to generate. When the organic light emitting display panel is a flexible display panel or a foldable display panel, the inorganic film layer in the encapsulation layer 10 is at an increased risk of being cracked, and the inorganic film layer is cracked to affect other film layers located nearby, for example, the film layer between the encapsulation layer 10 and the substrate 21 is also cracked.
In the embodiment of the present application, the inorganic layers on the two sides of the organic film layer 13 are respectively set as the inorganic layers stacked by the multiple sub-film layers, on one hand, the first inorganic layer 11 or the second inorganic layer 12 formed by stacking the sub-film layers on any side of the organic film layer 13 still has a larger film thickness, so that the package layer 10 is ensured to have good capability of isolating external water vapor and oxygen; on the other hand, the thickness of the sub-film layer on any side of the organic film layer 13 is smaller, so that the internal stress of the inorganic layer is reduced, and the risk of cracks generated in the packaging layer 10 is reduced; on the other hand, the sequential stacking of the sub-layers of the first type inorganic layer 11/the second type inorganic layer 12 on one side of the organic layer 13 can prepare each sub-layer in steps in the same equipment and environment without generating additional cost.
In the embodiment, in each of the first inorganic layer 11 and the second inorganic layer 12, the thickness of the sub-film layer closer to the organic film layer 13 is larger, and the thickness of the sub-film layer farther from the organic film layer 13 is smaller. Since the organic film layer 13 can help the inorganic sub-film layer close to the organic film layer to release internal stress, the thickness of the sub-film layer closer to the organic film layer 13 in the first inorganic layer 11 and the second inorganic layer 12 is larger, so that the number of the sub-film layers in the first inorganic layer 11 and the second inorganic layer 12 is reduced to save preparation time while the thicknesses of the first inorganic layer 11 and the second inorganic layer 12 are ensured, and the internal stress of the sub-film layer is not increased. In addition, when the organic light emitting display panel is bent or folded, the inorganic sub-film layer close to the surface in the encapsulation layer 10 is far away from the organic film layer 13 and has the largest curvature, so that the first type inorganic layer 11 and the second type inorganic layer 12 are subjected to the largest tensile stress or compressive stress, and in the embodiment of the present application, the thickness of the inorganic sub-film layer close to the surface in the encapsulation layer 10 is the smallest, that is, the smaller the internal stress thereof is, the risk of generating cracks thereof is reduced.
Fig. 3 is a schematic detail view of an encapsulation layer in another organic light emitting display panel according to an embodiment of the present disclosure.
The encapsulation layer 10 of the organic light emitting display panel provided in the embodiment of the present application includes a plurality of first inorganic layers 11 and a plurality of second inorganic layers 12, which may each include a plurality of sub-film layers. In one embodiment of the present application, as shown in fig. 3, the first-type inorganic layer 11 and the second-type inorganic layer 12 each include three sub-film layers.
Specifically, along the thickness direction Z of the organic light emitting display panel, the first inorganic layer 11 includes a first inorganic layer 113 in addition to the first inorganic layer 111 and the first inorganic layer 112, and the first inorganic layer 113 is located on a side of the first inorganic layer 112 away from the first inorganic layer 111. That is, a sub-film layer adjacent to the organic film layer 13 in the first inorganic layer 11 is the first third inorganic layer 113.
Specifically, in the thickness direction Z of the organic light emitting display panel, the second-type inorganic layer 12 includes a second-type third inorganic layer 123 in addition to the second-type first inorganic layer 121 and the second-type second inorganic layer 122, and the second-type third inorganic layer 123 is located on a side of the second-type second inorganic layer 122 away from the second-type first inorganic layer 121. That is, a sub-film layer adjacent to the organic film layer 13 in the second inorganic layer 12 is the second third inorganic layer 123.
Wherein the thickness of the first-type third inorganic layer 113 is greater than the thickness of the first-type second inorganic layer 112, and the thickness of the second-type third inorganic layer 123 is less than the thickness of the second-type second inorganic layer 122. As shown in fig. 3, if the thickness of the first-type third inorganic layer 113 is d13 and the thickness of the second-type third inorganic layer 123 is d23, d11 < d12 < d13, d23 < d22 < d 21.
The inventors found that by respectively providing the first inorganic layer 11 and the second inorganic layer 12 with three sub-film layers having gradually changing thicknesses, the problem of excessive stress in the first inorganic layer 11 and the second inorganic layer 12 can be effectively solved without increasing the number of sub-film layers too much.
In one implementation manner of the embodiment, the thickness d11 of the first inorganic layer 111 is the same as the thickness d23 of the second inorganic layer 123, the thickness d12 of the first inorganic layer 112 is the same as the thickness d22 of the second inorganic layer 122, and the thickness d13 of the first inorganic layer 113 is the same as the thickness d21 of the second inorganic layer 121. That is, the thicknesses of the sub-film layers located at equal distances from the organic film layer 13, respectively, in the first-type inorganic layer 11 and in the second-type inorganic layer 12 on both sides of the organic film layer 13, are equal. Specifically, the thickness d11 of the first inorganic layer 111 of the first type and the thickness d23 of the third inorganic layer 123 of the second type are both 0.2 μm, i.e., d11 ═ d23 ═ 0.2 μm; the thickness d12 of the first-type second inorganic layer 112 and the thickness d22 of the second-type second inorganic layer 122 are both 0.3 μm, i.e., d12 ═ d22 ═ 0.3 μm; the thickness d13 of the first third inorganic layer 113 and the thickness d21 of the second first inorganic layer 121 are both 0.5 μm, i.e., d13 ═ d21 ═ 0.5 μm.
Fig. 4 is a schematic diagram of a stress simulation result of each film layer of an organic light emitting display panel in the prior art, and fig. 5 is a schematic diagram of a stress simulation result of each film layer of an organic light emitting display panel provided in an embodiment of the present application. In fig. 4, the AA area and the AA area in fig. 5 are at the same position of different organic light emitting display panels, the BB area and the BB area in fig. 4 and 5 are at the same position of different organic light emitting display panels, and both the AA area and the BB area are areas near the encapsulation layer 10.
In the organic light emitting display panel simulated in fig. 5, d11 ═ d23 ═ d2 μm, d12 ═ d22 ═ d 3 μm, and d13 ═ d21 ═ d 5 μm. As can be seen from comparing fig. 5 and fig. 4, the stress near the encapsulation layer 10 of the organic light emitting display panel provided in the embodiment of the present application is significantly reduced compared to the organic light emitting display panel in the prior art.
In one embodiment of the present application, the materials of the sub-film layers in the first inorganic layer 11 are the same, and the first inorganic layer 111 and the first inorganic layer 112 are the same; the materials of the respective sub-film layers in the second type inorganic layer 12 are the same, and the second type first inorganic layer 121 and the second type second inorganic layer 122 are the same. When the first-type inorganic layer 11 further includes the first-type third inorganic layer 113, the materials of the first-type first inorganic layer 111, the first-type second inorganic layer 112, and the first-type third inorganic layer 113 are the same; when the second type inorganic layer 12 further includes the second type third inorganic layer 123, the materials of the second type first inorganic layer 121, the second type second inorganic layer 122, and the second type third inorganic layer 123 are the same. In addition, the material of each sub-film layer in the first inorganic layer 11 is the same as the material of each sub-film layer in the second inorganic layer 12, that is, the materials of the first inorganic layer 111, the first second inorganic layer 112, the first third inorganic layer 113, the second first inorganic layer 121, the second inorganic layer 122, and the second third inorganic layer 123 are all the same.
The materials of the sub-film layers in the first inorganic layer 11 are the same, and the materials of the sub-film layers in the second inorganic layer 12 are the same, that is, the materials for preparing the sub-film layers in the first inorganic layer 11 are the same, and the materials for preparing the sub-film layers in the second inorganic layer 12 are the same, so that it can be ensured that the sub-film layers in the first inorganic layer 11 can be continuously prepared under the same preparation equipment and conditions, and the sub-film layers in the second inorganic layer 12 can be continuously prepared under the same preparation equipment and conditions.
Specifically, the first inorganic layer 111, the first inorganic layer 112, the second inorganic layer 121, and the second inorganic layer 122 may be silicon nitride layers. When the first inorganic layer 11 further includes the first third inorganic layer 113, and the second inorganic layer 12 further includes the second third inorganic layer 123, the first third inorganic layer 113 and the second third inorganic layer 123 may also be silicon nitride layers.
Fig. 6 is a schematic view of a display device according to an embodiment of the present disclosure.
As shown in fig. 6, a display device provided in an embodiment of the present application includes the organic light emitting display panel 01 provided in any one of the embodiments described above. The display device provided by the embodiment of the application can be a mobile phone, and in addition, the display device provided by the embodiment of the application can also be a computer, a television and other display devices.
In addition, the display device provided by the embodiment of the application can be a flexible display device and can also be a foldable display device.
In the embodiment of the present application, the inorganic layers located on both sides of the organic film layer 13 in the encapsulation layer of the organic light emitting display panel included in the display device are respectively set as the inorganic layers stacked by the multiple sub-film layers, so that the display device can be ensured to have good capability of isolating external moisture and oxygen, the internal stress of the inorganic layers is reduced, the risk of cracks generated in the encapsulation layer 10 of the display device is reduced, and no additional cost is generated.
Fig. 7 is a schematic flow chart of an encapsulation layer of an organic light emitting display panel according to an embodiment of the present disclosure, and fig. 8 is a schematic flow chart of a process for manufacturing the encapsulation layer according to the embodiment of the present disclosure.
The embodiment of the present application provides a method for preparing an encapsulation layer in an organic light emitting display panel, and the method is used for preparing the encapsulation layer 10 in the organic light emitting display panel provided in any one of the above embodiments. As shown in fig. 7, the preparation method provided by the embodiment of the present application includes:
step S01: preparing a first inorganic layer;
step S02: preparing an organic film layer;
step S03: a second type of inorganic layer is prepared.
Referring to fig. 1 and 7, steps S01, S02, and S03 are performed sequentially, that is, after the thin film transistor layer DF and the light emitting layer PF for display are prepared on one side of the substrate 21 and/or the touch layer SF for touch is prepared, the first inorganic layer 11, the organic layer 13, and the second inorganic layer 12 of the encapsulation layer 10 are sequentially prepared on one side of the functional layers away from the substrate 01. The first inorganic layer 11 and the second inorganic layer 12 may be prepared by chemical vapor deposition, and the organic film layer 13 may be prepared by inkjet printing.
The step S01 of preparing the first inorganic layer 11 at least includes the steps of S11 depositing the first inorganic layer 111 by cvd and S12 depositing the second inorganic layer 112 by cvd; the preparation of the second type inorganic layer 12 in the step S03 includes at least the steps of depositing the second type first inorganic layer 121 by using the chemical vapor deposition method in the step S21 and depositing the second type second inorganic layer 122 in the step S22. The organic film layer 13 is prepared after the first inorganic layer 112 is prepared, and the second inorganic layer 121 is prepared after the organic film layer 13 is prepared, so that the first inorganic layer 112 is close to the organic film layer 13 relative to the first inorganic layer 111, and the second inorganic layer 121 is close to the organic film layer 13 relative to the second inorganic layer 121. And the thickness of the first-type second inorganic layer 112 is greater than that of the first-type first inorganic layer 111, and the thickness of the second-type second inorganic layer 122 is less than that of the second-type first inorganic layer 121.
In the embodiment of the present application, the sub-film layer in the first inorganic layer 11 and the sub-film layer in the second inorganic layer 12 are prepared in steps, so that the thickness of the inorganic sub-film layer close to the organic film layer 13 is greater than the thickness of the inorganic sub-film layer far from the organic film layer 13, the internal stress of the first inorganic layer 11 and the internal stress of the second inorganic layer 12 are reduced by reducing the thickness of the sub-film layer, the stress of the inorganic sub-film layer close to the organic film layer 13 is further released by the organic film layer 13, the internal stress of the inorganic sub-film layer far from the organic film layer 13 is further reduced by reducing the thickness of the inorganic sub-film layer, and the internal stresses of the inorganic sub-film layers in the package layer 10 are balanced by different approaches while the internal stresses of the first inorganic layer 11 and the second inorganic layer 12 in the package layer 10 are reduced as a whole.
In the embodiment of the present application, the step S11 is performed sequentially with the step S12, and when the first inorganic layer 111 and the second inorganic layer 112 are deposited by the chemical vapor deposition method in the steps S11 and S12, the same reaction gas may be used in the same reaction chamber. And by extending the reaction time and/or the flow rate of the reaction gas of the chemical vapor deposition in step S12 with respect to step S11, the thickness of the first-type second inorganic layer 112 is made greater than the thickness of the first-type first inorganic layer 111, while the first-type first inorganic layer 111 and the first-type second inorganic layer 112 are made of the same material.
In the embodiment of the present application, the step S21 is performed sequentially with the step S22, and when the second type first inorganic layer 121 and the second type second inorganic layer 122 are deposited by using the chemical vapor deposition method in the steps S21 and S22, the same reaction gas may be used in the same reaction chamber. And by reducing the reaction time and/or the flow rate of the reaction gas of the chemical vapor deposition in step S22 with respect to step S21, the thickness of the second type second inorganic layer 122 is made smaller than the thickness of the second type first inorganic layer 121, while the materials of the second type first inorganic layer 121 and the second type second inorganic layer 122 are the same.
Since the sub-film layers in the first inorganic layer 11 are prepared by using the same reaction gas, the step-by-step preparation of the first inorganic layer 11 can be performed in the same reaction chamber, and the step-by-step preparation of the second inorganic layer 12 can be performed in the same reaction chamber, so that the process steps are simple and the operation is easy.
Specifically, in steps S11, S12, S21, and S22, the first inorganic layer 111, the second inorganic layer 112, the first inorganic layer 121, and the second inorganic layer 122 are deposited by chemical vapor deposition, and the reaction gases of the first inorganic layer 111, the second inorganic layer 112, the second inorganic layer 121, and the second inorganic layer 122 may be silane and ammonia, respectively, so that the first inorganic layer 111, the second inorganic layer 112, the first inorganic layer 121, and the second inorganic layer 122 are silicon nitride layers.
In addition, the step S01 includes steps S11 and S12, in which the step S11 includes, in addition to the step of depositing the first inorganic layer 111 by using the chemical vapor deposition method, in-situ annealing the first inorganic layer 111 after the first inorganic layer 111 is deposited, so as to release the stress in the first inorganic layer 111; step S12 includes, in addition to depositing the first-type second inorganic layer 112 by using the chemical vapor deposition method, in-situ annealing the first-type second inorganic layer 112 after depositing the first-type second inorganic layer 112 to release the stress in the first-type second inorganic layer 112.
Meanwhile, the steps S21 and S22 of S02 include the step S21 of depositing the second type first inorganic layer 121 by chemical vapor deposition, and in-situ annealing the second type first inorganic layer 121 after depositing the second type first inorganic layer 121 to release the stress in the second type first inorganic layer 121; step S22 includes, in addition to depositing the second-type second inorganic layer 122 by cvd, in-situ annealing the second-type second inorganic layer 122 after depositing the second-type second inorganic layer 122 to relieve stress in the second-type second inorganic layer 122.
In step S11, the deposition of the first inorganic layer 111 and the in-situ annealing of the first inorganic layer 111 are both performed in the same reaction chamber, and the gas in the reaction chamber is a reaction gas during the deposition phase by the chemical vapor deposition method and a shielding gas during the in-situ annealing phase; in step S12, the deposition of the first-type second inorganic layer 112 and the in-situ annealing of the first-type second inorganic layer 112 are both performed in the same reaction chamber, and the gas in the reaction chamber is a reaction gas in the deposition stage by using a chemical vapor deposition method and a protective gas in the in-situ annealing stage; in step S21, the deposition of the second type of the first inorganic layer 121 and the in-situ annealing of the second type of the first inorganic layer 121 are both performed in the same reaction chamber, and the gas in the reaction chamber is a reaction gas in the deposition stage by using a chemical vapor deposition method and a protective gas in the in-situ annealing stage; in step S22, the deposition of the second inorganic layer 122 and the in-situ annealing of the second inorganic layer 122 are performed in the same reaction chamber, and the gas in the reaction chamber is a reaction gas during the deposition phase by the chemical vapor deposition method and a protective gas during the in-situ annealing phase. In steps S11, S12, S21, and S22, the reaction gases in the cvd deposition stage may be silane and ammonia, and the shielding gases in the in-situ annealing stage may be nitrogen.
The internal stress of the sub-film layer can be reduced by annealing after the sub-film layer is deposited by adopting a chemical vapor deposition method. And the deposition stage and the annealing stage corresponding to each sub-film layer in the first inorganic layer 11 and the second inorganic layer 12 are only different from each other in gas in the reaction chamber, specifically, when one sub-film layer is deposited, the reaction gas is turned off and the protective gas is filled, and the process steps are simple.
In addition, the temperatures for depositing the first inorganic layer 111 by cvd and annealing the first inorganic layer 111 in situ in step S11 are the same, and the temperatures for depositing the second inorganic layer 112 by cvd and annealing the second inorganic layer 112 in situ in step S12 are the same. In one implementation of this embodiment, the temperature in the reaction chamber in step S01 is not changed at all.
Meanwhile, the temperatures for depositing the second type of first inorganic layer 121 by using the chemical vapor deposition method and annealing the second type of first inorganic layer 121 in situ in step S21 are the same, and the temperatures for depositing the second type of second inorganic layer 122 by using the chemical vapor deposition method and annealing the second type of second inorganic layer 122 in situ in step S22 are the same. In one implementation of this embodiment, the temperature in the reaction chamber in step S02 is always constant.
In the application, the deposition temperature and the annealing temperature of each sub-film layer in the first inorganic layer 11 and the second inorganic layer 12 are the same, so that the increase of the preparation time caused by adjusting the temperature is avoided.
Fig. 9 is a schematic flow chart of another process for manufacturing an encapsulation layer according to an embodiment of the present disclosure.
In one embodiment of the present application, as shown in fig. 9, the preparing of the first type inorganic layer 11 in the step S01 may further include depositing the first type third inorganic layer 113 by a chemical vapor deposition method in addition to the steps S11 and S12 in a step S13. The first type third inorganic layer 113 is performed after the first type second inorganic layer 112 is prepared, so that the first type third inorganic layer 113 is located on a side of the first type second inorganic layer 112 away from the first type first inorganic layer 111, that is, the first type third inorganic layer 113 is close to the organic film layer 13 relative to the first type second inorganic layer 112. In the present embodiment, the thickness of the first-type third inorganic layer 113 is greater than that of the first-type second inorganic layer 112.
Further, as shown in fig. 9, the preparation of the second type inorganic layer 12 in the step S02 may include a step S23 of depositing the second type third inorganic layer 123 using a chemical vapor deposition method, in addition to the steps S21 and S22. The second type third inorganic layer 123 is performed after the second type second inorganic layer 122 is prepared, and then the second type third inorganic layer 123 is located on the side of the second type second inorganic layer 122 away from the second type first inorganic layer 121, that is, the second type third inorganic layer 123 is away from the organic film layer 13 relative to the second type second inorganic layer 122. In the present embodiment, the thickness of the second-type third inorganic layer 123 is smaller than the thickness of the second-type second inorganic layer 122.
Specifically, the thickness of the first inorganic layer and the thickness of the second inorganic layer are both 0.2 μm, the thickness of the first third inorganic layer and the thickness of the second third inorganic layer are both 0.3 μm, and the thickness of the first second inorganic layer and the thickness of the second inorganic layer are both 0.5 μm.
In one implementation of the embodiment of the present application, no matter the first inorganic layer 11 includes several sub-film layers, the reaction gas and temperature in the deposition stage of each sub-film layer in the first inorganic layer 11 are the same and the reaction gas and temperature in the in-situ annealing stage are the same; regardless of whether the first inorganic layer 11 includes several sub-film layers, the reaction gas and temperature in the deposition stage and the reaction gas and temperature in the in-situ annealing stage of each sub-film layer in the second inorganic layer 12 are the same.
The first-type third inorganic layer 113 may have the same reaction gas and reaction temperature as the first-type second inorganic layer 112 and the first-type first inorganic layer 111 in the chemical vapor deposition stage, and the same protective gas and annealing temperature in the in-situ annealing stage; the second type third inorganic layer 123 may have the same reaction gas and reaction temperature as the second type second inorganic layer 122 and the second type first inorganic layer 121 in the chemical vapor deposition stage, and the same protective gas and annealing temperature in the in-situ annealing stage.
The above description is only a preferred embodiment of the present application and should not be taken as limiting the present application, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (8)
1. An organic light-emitting display panel is characterized by comprising an encapsulation layer, wherein the encapsulation layer comprises a first inorganic layer, an organic film layer and a second inorganic layer, and the organic film layer is positioned between the first inorganic layer and the second inorganic layer;
the first inorganic layer comprises at least two sub-film layers, the at least two sub-film layers of the first inorganic layer comprise a first inorganic layer and a first inorganic layer, the first inorganic layer is close to the organic film layer relative to the first inorganic layer, and the thickness of the first inorganic layer is larger than that of the first inorganic layer;
the second inorganic layer comprises at least two sub-film layers, the at least two sub-film layers comprise a second first inorganic layer and a second inorganic layer, the second first inorganic layer is close to the organic film layer relative to the second inorganic layer, and the thickness of the second first inorganic layer is larger than that of the second inorganic layer;
in at least two sub-film layers included in the first inorganic layer, the thickness of the sub-film layer farther away from the organic film layer is smaller; in at least two sub-film layers included in the second inorganic layer, the sub-film layers farther away from the organic film layer have smaller thicknesses;
the first inorganic layer, the second inorganic layer and the third inorganic layer are all silicon nitride layers;
the first inorganic layer also comprises a first third inorganic layer; the first type third inorganic layer is positioned on one side of the first type second inorganic layer far away from the first type first inorganic layer, and the thickness of the first type third inorganic layer is larger than that of the first type second inorganic layer;
the second type of inorganic layer further comprises a second type of third inorganic layer; the second type third inorganic layer is positioned on one side of the second type second inorganic layer far away from the second type first inorganic layer, and the thickness of the second type third inorganic layer is smaller than that of the second type second inorganic layer.
2. The organic light-emitting display panel according to claim 1, wherein the thickness of the first inorganic layer of the first kind and the thickness of the third inorganic layer of the second kind are both 0.2 μm, the thickness of the first inorganic layer of the second kind and the thickness of the second inorganic layer of the second kind are both 0.3 μm, and the thickness of the first inorganic layer of the first kind and the thickness of the first inorganic layer of the second kind are both 0.5 μm.
3. A display device comprising the organic light emitting display panel according to any one of claims 1 to 2.
4. A preparation method of an encapsulation layer of an organic light-emitting display panel is characterized in that the preparation method is used for preparing the encapsulation layer in the organic light-emitting display panel according to any one of claims 1 to 2, and comprises the steps of sequentially preparing a first inorganic layer, preparing an organic film layer and preparing a second inorganic layer;
the first inorganic layer comprises at least two sub-film layers, and the at least two sub-film layers comprise a first inorganic layer of a first type and a second inorganic layer of a first type; in at least two sub-film layers included in the first inorganic layer, the thickness of the sub-film layer farther away from the organic film layer is smaller;
the second inorganic layer comprises at least two sub-film layers, and the at least two sub-film layers comprise a second first inorganic layer and a second inorganic layer; among at least two sub-film layers included in the second inorganic layer, the sub-film layers farther away from the organic film layer have smaller thicknesses;
the first inorganic layer, the second inorganic layer and the third inorganic layer are all silicon nitride layers;
wherein:
the preparing the first inorganic layer comprises at least depositing the first inorganic layer and depositing the second inorganic layer by chemical vapor deposition; the first inorganic layer is close to the organic film layer relative to the first inorganic layer, and the thickness of the first inorganic layer is larger than that of the first inorganic layer;
the preparing the second inorganic layer comprises depositing at least a second first inorganic layer and a second inorganic layer by chemical vapor deposition; the second type first inorganic layer is close to the organic film layer relative to the second type second inorganic layer, and the thickness of the second type first inorganic sub-layer is larger than that of the second type second inorganic layer;
the preparing the first inorganic layer further comprises depositing a first third inorganic layer by chemical vapor deposition; the first type third inorganic layer is positioned on one side of the first type second inorganic layer far away from the first type first inorganic layer, and the thickness of the first type third inorganic layer is larger than that of the first type second inorganic layer;
the preparing the second inorganic layer further comprises depositing a second third inorganic layer by chemical vapor deposition; the second type third inorganic layer is positioned on one side of the second type second inorganic layer far away from the second type first inorganic layer, and the thickness of the second type third inorganic layer is smaller than that of the second type second inorganic layer.
5. The method for preparing the encapsulating layer according to claim 4, wherein the preparing the first inorganic layer further comprises annealing the first inorganic layer in situ after the depositing the first inorganic layer, and annealing the first second inorganic layer in situ after the depositing the second inorganic layer;
the preparing the second type of inorganic layer further comprises in-situ annealing the second type of first inorganic layer after the depositing the second type of first inorganic layer, and in-situ annealing the second type of second inorganic layer after the depositing the second type of second inorganic layer.
6. The method for preparing an encapsulation layer according to claim 5, wherein the reaction gases for depositing the first inorganic layer, the second inorganic layer, the first inorganic layer and the second inorganic layer are silane and ammonia;
the protective gas for in-situ annealing the first inorganic layer, the in-situ annealing the second inorganic layer and the in-situ annealing the second inorganic layer is nitrogen.
7. The method of claim 6, wherein the temperatures of the depositing the first inorganic layer and the in-situ annealing the first inorganic layer are the same, and the temperatures of the depositing the first inorganic layer and the in-situ annealing the first inorganic layer are the same;
the temperatures of the depositing of the second type of first inorganic layer and the in-situ annealing of the second type of first inorganic layer are the same, and the temperatures of the depositing of the second type of second inorganic layer and the in-situ annealing of the second type of second inorganic layer are the same.
8. The method according to claim 4, wherein the thickness of the first inorganic layer and the thickness of the second inorganic layer are both 0.2 μm, the thickness of the first inorganic layer and the thickness of the second inorganic layer are both 0.3 μm, and the thickness of the first inorganic layer and the thickness of the second inorganic layer are both 0.5 μm.
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