CN112652716A - Organic thin film transistor with bottom-gate top contact structure and preparation method and application thereof - Google Patents
Organic thin film transistor with bottom-gate top contact structure and preparation method and application thereof Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
Abstract
The invention discloses an organic thin film transistor with a bottom gate top contact structure and a preparation method and application thereof. The organic thin film transistor structure sequentially comprises a substrate, an OTS modified insulating layer, an active layer and a source drain electrode from bottom to top; or the substrate, the aluminum, the OTS modified insulating layer, the active layer and the source drain electrode are arranged from bottom to top in sequence; the active layer material is PDQT. The invention takes a semiconductor polymer material PDQT as an active layer, and modifies an insulating layer by OTS, thereby obviously improving the transmission characteristic of the organic thin film transistor to current carriers and providing reference for preparing a full-organic thin film transistor device array of full solution.
Description
Technical Field
The invention belongs to the field of organic thin film transistor devices, and particularly relates to an organic thin film transistor with a bottom gate top contact structure, and a preparation method and application thereof.
Background
The active layer of the organic thin film transistor is a conjugated polymer or an organic small molecule. Tsumura et al reported in 1986 on an electrochemical basisThe mobility of the obtained carrier of the chemically polymerized polythiophene organic thin film transistor device is only 10-5cm2the/Vs has lower performance, but expands the potential application field of organic semiconductor materials, and opens the research hot trend of OTFTs. Breakthrough progress has been made in recent years and performance has exceeded the level of a-Si: H TFTs. Chan Luo et al reported that the active layer material was poly [4- (4, 4-dihexadecyl-4H-cyclopenta [1,2-b:5, 4-b']dithiophen-2-yl)-alt-[1,2,5]-thiadiazolo[3,4-c]pyridine]The hole mobility of the self-assembled OTFT device is up to mu h-36.3 cm2 V-1s-1. Compared with an inorganic TFT, an organic TFT has the following advantages:
(1) the organic materials are various in types, the preparation process is simple and flexible, the electrical properties of the materials can be modulated by a chemical doping method, and the semiconductor properties of the organic materials can be changed by a physical doping method, so that the device performance of the TFT can be adjusted.
(2) The organic materials have a plurality of film forming technologies, including spin coating, pulling, molecular self-assembly, vacuum evaporation technology, screen printing technology, ink-jet printing technology and the like, and large-area film preparation is easy to realize.
(3) The organic material has good flexibility naturally, can be well compatible with a flexible substrate, and can be used for preparing flexible wearable electronic devices.
In organic thin film transistor devices, the insulating layer is a very important component. The insulating layer materials currently used in organic thin film transistor devices are mainly of the following types:
(1) an inorganic dielectric material. Comprising conventional SiO2Dielectric layer, high-k dielectric material Al2O3、HfO2、TiO2、ZrO2And so on.
(2) An organic polymer dielectric material. Including methyl methacrylate, polyimide, polyvinyl phenol, polystyrene, polyvinyl alcohol, benzocyclobutene, and the like. The organic polymer insulating layer material has low surface roughness and can be prepared by solution, so that the organic polymer insulating layer material has great potential in flexible printed electronic devices.
(3) Inorganic/organic polymer composite dielectric materials. Inorganic nano particles and organic polymer materials are generally adopted for compounding, so that a high-quality film with high dielectric constant, compactness, flatness and good mechanical property is obtained.
The appearance, dielectric constant, interface property, contact property and the like of the insulating layer have great influence on the transmission property of current carriers, and for the insulating layer, due to the hydrophilic property of the surface of the insulating layer, the interface between the insulating layer and the organic material of the active layer is difficult to perfectly match, so that defects are formed between the interfaces, the performance of a device is reduced due to the increase of leakage current, and therefore, the surface of the insulating layer is modified, the contact between the active layer and the insulating layer is tighter, and the method is an effective method for solving the problem.
Disclosure of Invention
In order to overcome the defects and shortcomings in the prior art, the invention mainly aims to provide an organic thin film transistor with a bottom gate top contact structure.
The invention also aims to provide a preparation method of the organic thin film transistor with the bottom-gate top-contact structure.
The invention further aims to provide application of the organic thin film transistor with the bottom-gate top-contact structure.
The purpose of the invention is realized by the following technical scheme:
an organic thin film transistor with a bottom-gate top contact structure comprises a substrate, an insulating layer modified by Octadecyl Trichlorosilane (OTS), an active layer and a source drain electrode from bottom to top in sequence;
or the substrate, the aluminum layer, the insulating layer modified by Octadecyl Trichlorosilane (OTS), the active layer and the source and drain electrodes are arranged from bottom to top in sequence.
Preferably, the substrate is at least one of a heavily doped P-type silicon wafer and a glass sheet.
Preferably, the insulating layer materials in the insulating layer modified by Octadecyltrichlorosilane (OTS) are all SiO2、Al2O3、HfO2、TiO2、ZrO2Of polyimides, polyvinylphenols, polystyrenes, polyvinyl alcohols and benzocyclobutenesAt least one of them.
Preferably, the insulating layer modified by Octadecyltrichlorosilane (OTS) is modified by Octadecyltrichlorosilane (OTS) on the surface of the insulating layer by the following specific method: and titrating Octadecyltrichlorosilane (OTS) on the insulating layer, enabling the OTS to be paved on the surface of the insulating layer, standing for 1-2min, and spin-coating at the rotating speed of 3000-5000 rmp for 20-40 seconds.
Preferably, the thickness of the insulating layer without OTS modification is 200-300 nm.
Preferably, the thickness of the aluminum layer is 200-300 nm.
Preferably, the active layers are all semiconductor polymer materials [3,6-bis (40-dedacyl [2,20] bithiophenyl-5-yl) -2,5-bis (2-hexyldececyl) -2, 5-dihydrorrolo [3,4-c ] pyrrole-1,4-dione ] (PDQT); the thickness of the active layer is 40-120 nm.
Preferably, the source and drain electrode material is gold, and the thickness of the source and drain electrode material is 50-100 nm.
More preferably, the Organic Thin Film Transistor (OTFT) with the bottom-gate top-contact structure is a heavily doped P-type silicon wafer and an Octadecyltrichlorosilane (OTS) modified SiO in sequence from bottom to top2A layer, a PDQT layer, and a gold electrode; or glass, aluminum and Al modified by Octadecyltrichlorosilane (OTS) from bottom to top in sequence2O3Layer, PDQT layer and gold electrode.
The preparation method of the organic thin film transistor with the bottom-gate top contact structure comprises the following steps:
preparing an aluminum layer on the surface of the substrate through a magnetron sputtering process, and then preparing an insulating layer on the surface of the aluminum layer through an anodic oxidation process, or directly preparing the insulating layer on the surface of the substrate through a thermal oxidation process; and modifying the surface of the insulating layer by using octadecyl trichlorosilane, preparing an active layer on the surface of the modified insulating layer, and preparing the source and drain electrodes by using a vacuum evaporation process.
Preferably, the active layer is prepared by spin coating and heat treatment.
The organic thin film transistor with the bottom-gate top-contact structure is applied.
Compared with the prior art, the invention has the following advantages and beneficial effects:
the invention takes semiconductor polymer material [3,6-bis (40-dedocyl [2,20] bithiophenyl-5-yl) -2,5-bis (2-hexyldecyl) -2, 5-dihydrapyrol [3,4-c ] pyrole-1, 4-dione ] (PDQT) as an active layer, and uses Octadecyltrichlorosilane (OTS) to modify an insulating layer, thereby reducing the leakage current of the insulating layer, improving the contact between the insulating layer and the active layer, leading the insulating layer to be more compact, obviously improving the transmission characteristic of an organic thin film transistor to carriers, and providing reference for preparing a full-organic thin film transistor device array of full solution.
Drawings
Fig. 1 is a schematic structural view of an OTFT device having a bottom-gate top-contact structure as described in comparative example 1 and examples 1 to 2, fig. 1(a) is a schematic structural view of a device in comparative example 1 and example 1, and fig. 1(b) is a schematic structural view of a device in example 2.
FIG. 2 shows Al in comparative example 12O3The OTFT characteristic curve of the insulating material, (a) the output characteristic curve, the voltage in the figure is-30V, -24V, -18V, -12V, -6V and 0V from top to bottom; (b) transfer characteristic curve.
FIG. 3 is OTS modified Al in example 22O3The OTFT characteristic curve of the insulating material, (a) the output characteristic curve, the voltage in the figure is-20V, -16V, -12V, -8V, -4V and 0V from top to bottom; (b) transfer characteristic curve.
FIG. 4 is OTS modified SiO in example 12The OTFT characteristic curve of the insulating material, (a) the output characteristic curve, the voltage in the figure is-30V, -24V, -18V, -12V, -6V and 0V from top to bottom; (b) transfer characteristic curve.
Detailed Description
The present invention will be described in further detail with reference to examples and drawings, but the embodiments of the present invention are not limited thereto.
Those who do not specify specific conditions in the examples of the present invention follow conventional conditions or conditions recommended by the manufacturer. The raw materials, reagents and the like which are not indicated for manufacturers are all conventional products which can be obtained by commercial purchase.
Example 1
Selecting a device structure shown in figure 1(a), wherein a substrate is a heavily doped P-type silicon wafer, ultrasonically cleaning the substrate for 10 minutes by respectively using tetrahydrofuran, a cleaning solution, deionized water and isopropanol, drying the substrate in a drying oven after cleaning, and preparing a thin SiO layer on the surface of the substrate by a thermal oxidation method2An insulating layer with a thickness of 300nm and SiO modified by Octadecyltrichlorosilane (OTS)2Surface, i.e. the titration of octadecyltrichlorosilane over the insulating layer, to flood it with SiO2Standing for 1-2min, spin-coating at 4000rmp for 30 s, and performing deacidification reaction on the OTS and the surface of the oxide insulating layer to form an alkyl monomolecular film with parallel octadecyl groups. The active layer is made of PDQT material with molecular weight larger than 30000 and solvent chloroform, the preparation concentration is 6mg/ml, the active layer is spin-coated in an anhydrous oxygen-free nitrogen glove box to form a film, the rotating speed is 2000rmp, the film thickness is 60nm, and the solution is filtered by a filter head with the thickness of 0.45 mu m before spin-coating; after the spin coating, the film was heat-treated at 200 ℃ for 15 minutes in a glove box. Gold is used as a source electrode and a drain electrode of the organic OTFT device, a vacuum evaporation process is used for preparing the gold electrode, and the vacuum degree is 3 multiplied by 10-4Pa, deposition rate of
Left and right, thickness of
And controlling the shape of the source and drain electrodes by using a mask.
Example 2
Selecting the device structure shown in FIG. 1(b), wherein the substrate is a glass sheet, preparing a layer of aluminum as a grid electrode by magnetron sputtering process, the thickness of the aluminum is 200nm, and then obtaining Al with the thickness of 200nm by adopting anodic oxidation process2O3An insulating layer, which is made of Octadecyltrichlorosilane (OTS) for modifying Al2O3On the surface, the OTS and the surface of the oxide insulating layer can generate deacidification reaction to form an alkyl monomolecular film with parallel octadecyl, namely, octadecyl trichlorosilane is titrated on the insulating layer to be paved on the surface, the insulating layer is kept stand for 1-2min, and spin-coating is carried out for 30 seconds at the rotating speed of 4000 rmp. PDQT material for active layersThe molecular weight is more than 30000, the solvent is chloroform, the preparation concentration is 6mg/ml, the solution is coated in a water-free and oxygen-free nitrogen glove box in a spinning way to form a film, the rotating speed is 2000rmp, the film thickness is 60nm, and the solution is filtered by a filter head with the diameter of 0.45 mu m before the spinning; after the spin coating, the film was heat-treated at 200 ℃ for 15 minutes in a glove box. Gold is used as a source electrode and a drain electrode of the organic OTFT device, a vacuum evaporation process is used for preparing the gold electrode, and the vacuum degree is 3 multiplied by 10-4Pa, deposition rate of
Left and right, thickness of
And controlling the shape of the source and drain electrodes by using a mask.
Comparative example 1
Selecting the device structure shown in FIG. 1(b), wherein the substrate is a glass sheet, preparing a layer of aluminum as a grid electrode by a magnetron sputtering process, the thickness of the aluminum is 200nm, and then obtaining Al with the thickness of 200nm on the surface of the grid electrode by an anodic oxidation process2O3An insulating layer. The active layer is made of PDQT material with molecular weight larger than 30000 and solvent chloroform, the preparation concentration is 6mg/ml, the active layer is spin-coated in an anhydrous oxygen-free nitrogen glove box to form a film, the rotating speed is 2000rmp, the film thickness is 60nm, and the solution is filtered by a filter head with the thickness of 0.45 mu m before spin-coating; after the spin coating, the film was heat-treated at 200 ℃ for 15 minutes in a glove box. Gold is used as a source electrode and a drain electrode of the organic OTFT device, a vacuum evaporation process is used for preparing the gold electrode, and the vacuum degree is 3 multiplied by 10-4Pa, deposition rate of
Left and right, thickness of
And controlling the shape of the source and drain electrodes by using a mask.
Table 1 is a summary table of the performance of the OTFT device having the bottom-gate top-contact structure described in examples 1 to 2 of the present invention and comparative example 1.
TABLE 1
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (10)
1. An organic thin film transistor with a bottom gate top contact structure is characterized in that a substrate, an insulating layer modified by octadecyl trichlorosilane, an active layer and a source drain electrode are sequentially arranged from bottom to top;
or the substrate, the aluminum layer, the insulating layer modified by octadecyl trichlorosilane, the active layer and the source and drain electrodes are arranged from bottom to top in sequence.
2. The organic thin film transistor with the bottom-gate top-contact structure as claimed in claim 1, wherein the octadecyl trichlorosilane modified insulating layer is prepared by modifying octadecyl trichlorosilane on the surface of the insulating layer by the following specific method: and titrating octadecyl trichlorosilane on the insulating layer to enable the octadecyl trichlorosilane to be paved on the surface of the insulating layer, standing for 1-2min, and spin-coating at the rotating speed of 3000-5000 rmp for 20-40 seconds.
3. The organic thin film transistor with the bottom-gate top-contact structure as claimed in claim 1, wherein the active layer is a semiconductor polymer material PDQT with a thickness of 40-120 nm.
4. The organic thin film transistor with a bottom-gate top-contact structure as claimed in claim 1, wherein the insulating layer material of the insulating layer modified by octadecyltrichlorosilane is SiO2、Al2O3、HfO2、TiO2、ZrO2Polyimide, polyvinyl phenol, and polyAt least one of styrene, polyvinyl alcohol, and benzocyclobutene; the thickness of the insulating layer without OTS modification is 200-300 nm.
5. The organic thin film transistor with the bottom-gate top-contact structure as claimed in claim 1, wherein the thickness of the aluminum layer is 200 to 300 nm.
6. The organic thin film transistor with the bottom-gate top-contact structure as claimed in claim 1, wherein the source and drain electrode material is gold, and the thickness of the source and drain electrode material is 50-100 nm.
7. The organic thin film transistor with the bottom-gate top-contact structure as claimed in claim 1, wherein the substrate is at least one of a heavily doped P-type silicon wafer and a glass wafer.
8. The organic thin film transistor with the bottom-gate top-contact structure as claimed in claim 1, wherein the heavily doped P-type silicon wafer and the octadecyl trichlorosilane modified SiO are sequentially arranged from bottom to top2A layer, a PDQT layer, and a gold electrode; or glass, aluminum and Al modified by octadecyl trichlorosilane sequentially from bottom to top2O3Layer, PDQT layer and gold electrode.
9. A method for preparing an organic thin film transistor with a bottom-gate top-contact structure as claimed in any one of claims 1 to 8, comprising the steps of:
preparing an aluminum layer on the surface of the substrate through a magnetron sputtering process, and then preparing an insulating layer on the surface of the aluminum layer through an anodic oxidation process, or directly preparing the insulating layer on the surface of the substrate through a thermal oxidation process; and modifying the surface of the insulating layer by using octadecyl trichlorosilane, preparing an active layer on the surface of the modified insulating layer, and preparing a source electrode and a drain electrode by using a vacuum evaporation process.
10. Use of an organic thin film transistor of a bottom-gate top-contact structure as claimed in any one of claims 1 to 8.
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| CN202011442474.3A CN112652716A (en) | 2020-12-11 | 2020-12-11 | Organic thin film transistor with bottom-gate top contact structure and preparation method and application thereof |
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| CN202011442474.3A CN112652716A (en) | 2020-12-11 | 2020-12-11 | Organic thin film transistor with bottom-gate top contact structure and preparation method and application thereof |
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| CN202011442474.3A Pending CN112652716A (en) | 2020-12-11 | 2020-12-11 | Organic thin film transistor with bottom-gate top contact structure and preparation method and application thereof |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070264747A1 (en) * | 2006-05-15 | 2007-11-15 | Kuo-Hsi Yen | Patterning process and method of manufacturing organic thin film transistor using the same |
| CN103311437A (en) * | 2012-03-16 | 2013-09-18 | 捷恩智株式会社 | Organic semiconductor thin film, organic semiconductor device and organic field effect transistor |
| CN103594626A (en) * | 2013-11-20 | 2014-02-19 | 上海大学 | Organic thin film transistor and manufacturing method thereof |
-
2020
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070264747A1 (en) * | 2006-05-15 | 2007-11-15 | Kuo-Hsi Yen | Patterning process and method of manufacturing organic thin film transistor using the same |
| CN103311437A (en) * | 2012-03-16 | 2013-09-18 | 捷恩智株式会社 | Organic semiconductor thin film, organic semiconductor device and organic field effect transistor |
| CN103594626A (en) * | 2013-11-20 | 2014-02-19 | 上海大学 | Organic thin film transistor and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| YUNING LI 等: ""Annealing-Free High-Mobility Diketopyrrolopyrrole-Quaterthiophene Copolymer for Solution-Processed Organic Thin Film Transistors"", 《JOURNAL OF THE AMERICAN CHEMICAL SOCIETY》 * |
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