CN112652679A - 一种板式tco镀膜载板结构 - Google Patents

一种板式tco镀膜载板结构 Download PDF

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CN112652679A
CN112652679A CN202011462397.8A CN202011462397A CN112652679A CN 112652679 A CN112652679 A CN 112652679A CN 202011462397 A CN202011462397 A CN 202011462397A CN 112652679 A CN112652679 A CN 112652679A
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carrier
plate
tco
carrier plate
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任法渊
黄金
王继磊
白炎辉
鲍少娟
冯乐
杨骥
杨文亮
师海峰
杜凯
孟亚楚
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Jinneng Photovoltaic Technology Co Ltd
Jinneng Clean Energy Technology Ltd
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Jinneng Clean Energy Technology Ltd
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls

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Abstract

本发明公开了一种板式TCO镀膜载板结构，包括基座和多个载板；基座具有多个载台；多个载板分别固定在多个载台上部。本发明通过将大尺寸载板分成若干个小尺寸载板，并分别安装固定在分割为多个载台的基座上，能够降低TCO镀膜过程中载板形变风险，增加抗性，同时减少TCO镀膜载板喷砂维护运输成本。

Description

一种板式TCO镀膜载板结构
技术领域
本发明涉及太阳能电池板制造运输设备技术领域，更具体的说是涉及一种板式TCO镀膜载板结构。
背景技术
非晶硅/晶体硅异质结太阳电池是一种典型的高效电池，由掺杂非晶硅发射区、极薄非晶硅本征层(数纳米厚)和晶体硅基区构成的异质结电池。由于非晶硅薄膜的导电性较差，需在非晶硅薄膜和金属电极之间沉积一层透明导电氧化物薄膜(TCO)，用于载流子的收集。随着设备产能的持续增大，TCO镀膜载板的尺寸也逐渐加大。
但是，随着载板尺寸持续变大，即载板横向和纵向跨度的增大，一方面，更易发生载板在使用过程中出现弯曲变形，从而导致在TCO镀膜过程中，碎片、掩膜偏移比例会大大增加；另一方面，大尺寸载板还会大大增加运输成本。
因此，提供一种减少变形及降低运输成本的板式TCO镀膜载板结构是本领域技术人员亟需解决的问题。
发明内容
有鉴于此，本发明提供了一种板式TCO镀膜载板结构，降低TCO镀膜过程中载板形变风险，增加抗性，同时减少TCO镀膜载板喷砂维护运输成本。
为了实现上述目的，本发明采用如下技术方案：
一种板式TCO镀膜载板结构，包括基座和多个载板；
所述基座具有多个载台；
多个所述载板分别固定在多个所述载台上部。
进一步的，所述基座为框架结构，所述框架结构包括方形框架和其之间的十字框架，所述方形框架和所述十字框架连接为一体以分隔形成多个所述载台。
进一步的，所述载台的内侧边沿延伸出支架以支撑所述载板。
进一步的，所述载板与所述载台通过螺钉连接。
进一步的，所述方形框架的长度为1-2.5m，宽度为0.6-2m。
进一步的，所述十字框架的宽度为0.01-0.05m。
进一步的，所述支架的延伸长度为0.01-0.05m。
进一步的，所述载板的长度为0.5-1.5m，宽度为0.3-1.2m。
通过采取以上方案，本发明的有益效果是：
通过将大尺寸载板分成若干个小尺寸载板，并分别安装固定在分割为多个载台的基座上，能够降低TCO镀膜过程中载板形变风险，增加抗性，同时减少TCO镀膜载板喷砂维护运输成本。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据提供的附图获得其他的附图。
图1附图为本发明提供的一种板式TCO镀膜载板结构的结构示意图。
图中：1-基座，2-载板，11-方形框架，12-十字框架。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
如图1所示，本发明实施例公开了一种板式TCO镀膜载板结构，包括基座1和多个载板2；基座1具有多个载台；多个载板2分别固定在多个载台上部。本发明通过将大尺寸载板分成若干个小尺寸载板2，并分别安装固定在分割为多个载台的基座1上，能够降低TCO镀膜过程中载板形变风险，增加抗性，同时减少TCO镀膜载板喷砂维护运输成本。
具体的，基座1为框架结构，框架结构包括方形框架11和其之间的十字框架12，方形框架11和十字框架12连接为一体以分隔形成多个载台。
具体的，载台的内侧边沿延伸出支架以支撑载板2。
具体的，载板2与载台通过螺钉连接。
具体的，方形框架11的长度为1-2.5m，宽度为0.6-2m。在本实施例中，方形框架11的长度优选为2.5m，宽度优选为1.6m。
具体的，十字框架12的宽度为0.01-0.05m。在本实施例中，十字框架12的宽度优选为0.05m。
具体的，支架的延伸长度为0.01-0.05m。在本实施例中，支架延伸长度为0.02m。
具体的，载板2的长度为0.5-1.5m，宽度为0.3-1.2m。在本实施例中，载板2的长度为1.10m，宽度为0.72m，容纳硅片尺寸为166*166mm，硅片边框距离为0.005m。
采用本发明的板式TCO镀膜载板结构，载板2未出现变形现象，且喷砂清洗运输成本降低10％。
本说明书中各个实施例采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似部分互相参见即可。对于实施例公开的装置而言，由于其与实施例公开的方法相对应，所以描述的比较简单，相关之处参见方法部分说明即可。
对所公开的实施例的上述说明，使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。因此，本发明将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。

Claims (8)

1.一种板式TCO镀膜载板结构，其特征在于，包括基座和多个载板；
所述基座具有多个载台；
多个所述载板分别固定在多个所述载台上部。
2.根据权利要求1所述的一种板式TCO镀膜载板结构，其特征在于，所述基座为框架结构，所述框架结构包括方形框架和其之间的十字框架，所述方形框架和所述十字框架连接为一体以分隔形成多个所述载台。
3.根据权利要求2所述的一种板式TCO镀膜载板结构，其特征在于，所述载台的内侧边沿延伸出支架以支撑所述载板。
4.根据权利要求3所述的一种板式TCO镀膜载板结构，其特征在于，所述载板与所述载台通过螺钉连接。
5.根据权利要求2-4任一项所述的一种板式TCO镀膜载板结构，其特征在于，所述方形框架的长度为1-2.5m，宽度为0.6-2m。
6.根据权利要求5所述的一种板式TCO镀膜载板结构，其特征在于，所述十字框架的宽度为0.01-0.05m。
7.根据权利要求3所述的一种板式TCO镀膜载板结构，其特征在于，所述支架的延伸长度为0.01-0.05m。
8.根据权利要求6所述的一种板式TCO镀膜载板结构，其特征在于，所述载板的长度为0.5-1.5m，宽度为0.3-1.2m。
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN205329154U (zh) * 2016-01-11 2016-06-22 苏州奥科飞光电科技有限公司 一种用于提高超薄制品良品率的镀膜治具
US20190249306A1 (en) * 2018-02-09 2019-08-15 Applied Materials, Inc. Apparatus and methods for reducing cross-contamination in cvd systems
CN209428600U (zh) * 2019-01-14 2019-09-24 南京仁厚科技有限公司 镀膜载板及镀膜系统
CN110643977A (zh) * 2019-09-12 2020-01-03 常州比太科技有限公司 一种整合pecvd和pvd镀膜制造hit电池的设备
CN111270222A (zh) * 2020-02-10 2020-06-12 深圳市拉普拉斯能源技术有限公司 一种TOPCon电池双面镀膜设备
CN111647877A (zh) * 2020-07-09 2020-09-11 梅耶博格光电设备(上海)有限公司 一种板式pecvd镀膜载板

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN205329154U (zh) * 2016-01-11 2016-06-22 苏州奥科飞光电科技有限公司 一种用于提高超薄制品良品率的镀膜治具
US20190249306A1 (en) * 2018-02-09 2019-08-15 Applied Materials, Inc. Apparatus and methods for reducing cross-contamination in cvd systems
CN209428600U (zh) * 2019-01-14 2019-09-24 南京仁厚科技有限公司 镀膜载板及镀膜系统
CN110643977A (zh) * 2019-09-12 2020-01-03 常州比太科技有限公司 一种整合pecvd和pvd镀膜制造hit电池的设备
CN111270222A (zh) * 2020-02-10 2020-06-12 深圳市拉普拉斯能源技术有限公司 一种TOPCon电池双面镀膜设备
CN111647877A (zh) * 2020-07-09 2020-09-11 梅耶博格光电设备(上海)有限公司 一种板式pecvd镀膜载板

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