CN112652487A - Preparation process of multilayer ceramic capacitor - Google Patents
Preparation process of multilayer ceramic capacitor Download PDFInfo
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- CN112652487A CN112652487A CN202110026327.6A CN202110026327A CN112652487A CN 112652487 A CN112652487 A CN 112652487A CN 202110026327 A CN202110026327 A CN 202110026327A CN 112652487 A CN112652487 A CN 112652487A
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- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 58
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000000919 ceramic Substances 0.000 claims abstract description 50
- 239000010410 layer Substances 0.000 claims abstract description 50
- 239000002002 slurry Substances 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims abstract description 23
- 239000011229 interlayer Substances 0.000 claims abstract description 22
- 239000003292 glue Substances 0.000 claims abstract description 20
- 239000000178 monomer Substances 0.000 claims abstract description 19
- 238000005245 sintering Methods 0.000 claims abstract description 19
- 238000007599 discharging Methods 0.000 claims abstract description 18
- 238000007598 dipping method Methods 0.000 claims abstract description 6
- 238000009713 electroplating Methods 0.000 claims abstract description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 239000011230 binding agent Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- 239000002270 dispersing agent Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000002120 nanofilm Substances 0.000 claims description 4
- 239000003960 organic solvent Substances 0.000 claims description 4
- 239000004014 plasticizer Substances 0.000 claims description 4
- 239000004576 sand Substances 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 238000000498 ball milling Methods 0.000 claims description 2
- 238000005336 cracking Methods 0.000 abstract description 5
- 229910052759 nickel Inorganic materials 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 230000006978 adaptation Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910001374 Invar Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
- H01G4/302—Stacked capacitors obtained by injection of metal in cavities formed in a ceramic body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention provides a preparation process of a multilayer ceramic capacitor, which is characterized in that a plurality of small-size ceramic chip monomers with interlayer cavity structures are obtained after grouting, glue discharging, sintering and demoulding are carried out on a mould with a plurality of small-size multilayer ceramic capacitor unit modules, conductive metal is filled in the interlayer cavity structures of the small-size ceramic chip monomers to obtain a multilayer ceramic capacitor blank, and then slurry dipping and electroplating are carried out to complete the preparation of the multilayer ceramic capacitor. According to the preparation process, the small-size ceramic chip monomer is manufactured firstly, and then the interlayer cavity is filled with the metal, so that the sintering process is omitted, the problem of large stress cannot exist in the formed metal layer because the formed metal layer does not pass through the sintering process, the cracking problem can be effectively solved, meanwhile, the metal layer does not shrink, the effective area of the metal layer is increased, the capacity value is improved, and a product with a smaller size can be manufactured.
Description
Technical Field
The invention relates to the technical field of multilayer ceramic capacitors, in particular to a preparation process for a small-size multilayer ceramic capacitor.
Background
A Multilayer Ceramic Capacitor (MLCC) is the most widely used type of chip component, and has the characteristics of small size, high specific volume and high precision, so that the volume and weight of electronic information terminal products (especially portable products) are effectively reduced, and the reliability of the products is improved.
With the development of MLCC miniaturization and thinning, for example, the mainstream MLCC size has been transited to 0201(0.6 × 0.3mm), 01005(0.4 × 0.2mm), and even smaller 008004(0.2 × 0.1mm), the current MLCC production process (as shown in fig. 1) is ball milling-slurry preparation-casting film formation-screen printing-lamination-cutting-glue discharge-sintering-chamfering-slurry dipping-firing end, etc., the cutting, sintering, and slurry dipping are all affected by the process constraints to affect the miniaturization production, and how to design the clamping tool in the current production process must be evaluated.
In addition, a sintering process is needed after screen printing, the size of the multilayer ceramic capacitor is small due to the restriction of small size, the corresponding particle size of the ceramic powder and the particle size of the metal powder are smaller, the adaptation rate of the metal layer and the ceramic layer is larger after sintering, and the stress problem, the cracking problem, the capacity value problem and the like are more prominent.
How to lead the production of industrialized small-size high-capacitance multilayer ceramic capacitor to continue like Moore's law in semiconductors is a challenge to the manufacturing equipment and processing technology of chip components of ceramic capacitors, so that a preparation technology suitable for small-size multilayer ceramic capacitors is needed to be developed to meet the development requirements under new situations.
Disclosure of Invention
According to the above-mentioned prior MLCC manufacturing process, when a small-sized multilayer ceramic capacitor is manufactured, the technical problems of high design requirement precision of a clamping tool, large influence of a sintering process on combination of a metal layer and a ceramic layer and the like exist, and the manufacturing process of the multilayer ceramic capacitor is provided. The invention mainly utilizes the mould with a plurality of independent small-size multilayer ceramic capacitor unit modules to carry out grouting, glue discharging and demoulding on the mould, and then fills the conductive metal into the interlayer cavity of the prepared small-size ceramic chip monomer, thereby saving the sintering process, increasing the effective area of the metal layer and being capable of preparing products with smaller size.
The technical means adopted by the invention are as follows:
a preparation process of a multilayer ceramic capacitor is characterized in that a plurality of small-size ceramic chip monomers with interlayer cavity structures are obtained after grouting, glue discharging and demolding are carried out on a mold with a plurality of small-size multilayer ceramic capacitor unit modules, conductive metal is filled in the interlayer cavity structures of the small-size ceramic chip monomers to obtain a multilayer ceramic capacitor blank, and then slurry dipping and electroplating are carried out to complete the preparation of the multilayer ceramic capacitor.
Furthermore, the mould at least comprises 10 × 10 small-size multilayer ceramic capacitor unit modules, the mould is of a mould closing structure at the upper side and the lower side, and a grouting inlet and an exhaust port are arranged on the upper layer mould corresponding to each small-size multilayer ceramic capacitor unit module.
Further, the small-sized multilayer ceramic capacitor unit module has a structure of a continuous few words with interlayer cavities.
Further, the slurry for grouting is high-viscosity ceramic slurry, and the viscosity of the slurry is 50-100 Pa.S @100 rpm.
Further, the ceramic slurry is prepared from ceramic powder, an organic solvent, a dispersing agent and a plasticizer according to a preset proportion, and is ball-milled on a sand mill until the standard for standby.
And further, removing the upper layer of the mould after grouting, performing glue discharging treatment on the ceramic slurry injected into the mould at the glue discharging temperature of 200-400 ℃ for at least 24 hours, sintering at 900-1300 ℃ after glue discharging, and then performing subsequent demoulding.
Further, when the lower-layer die is subjected to demolding treatment after binder removal and sintering, the die is inverted above the collecting device, and the small-size ceramic chip monomer falls off through ultrasonic vibration.
Further, the conductive metal is filled with nickel or copper by sputtering metal nickel or physical vapor deposition.
Furthermore, the material of the mould is made of steel material with small deformation after heating.
Further, a nano film layer easy to demould is plated in the die cavity.
Compared with the prior art, the invention has the following advantages:
1. compared with the traditional process, the preparation process of the invention firstly manufactures the small-size ceramic chip monomer, then fills metal in the interlayer cavity, and the formed metal layer and the ceramic layer do not pass through a co-sintering process, so that the problem of large stress can not exist, and the cracking problem can be effectively solved;
2. compared with the traditional process, the metal layer does not undergo a sintering process, so that the metal layer does not shrink, the effective area of the metal layer is increased, and the capacitance value is improved;
3. a product of smaller size can be produced compared to the conventional process.
Based on the reason, the invention can be widely popularized in the field of small-size capacitor preparation.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a flow chart illustrating a process for manufacturing a multilayer ceramic capacitor according to a conventional process.
Fig. 2 is a schematic view showing a structure of a mold having a plurality of small-sized multilayer ceramic capacitor cell modules according to the present invention.
FIG. 3 is a schematic view showing the construction of a small-sized multilayer ceramic capacitor cell module in the mold of the present invention.
Fig. 4 is a schematic structural diagram of a small-sized ceramic wafer monomer after demolding in the preparation process of the invention.
Fig. 5 is a top view of fig. 4.
Fig. 6 is a schematic view of filling conductive metal into an interlayer cavity structure on one side of a small-sized ceramic wafer monomer in the preparation process of the present invention.
Fig. 7 is a schematic view illustrating that after one side of fig. 6 is filled, the conductive metal is filled in the interlayer cavity structure on the other side of the small-sized ceramic wafer monomer.
Fig. 8 is an optical microscope photograph of a multilayer ceramic capacitor manufactured by a conventional process.
FIG. 9 is an optical microscope photograph of a multilayer ceramic capacitor prepared by the process of the present invention.
In the figure: 1. a mold; 11. a small-sized multilayer ceramic capacitor unit module; 12. a grouting inlet; 13. an exhaust port; 14. a structure in the shape of a connecting Chinese character 'ji' with interlayer cavities; 15. and (5) separating the interlayer cavity.
Detailed Description
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
The relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise. Meanwhile, it should be understood that the sizes of the respective portions shown in the drawings are not drawn in an actual proportional relationship for the convenience of description. Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate. Any specific values in all examples shown and discussed herein are to be construed as exemplary only and not as limiting. Thus, other examples of the exemplary embodiments may have different values. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
In the description of the present invention, it is to be understood that the orientation or positional relationship indicated by the directional terms such as "front, rear, upper, lower, left, right", "lateral, vertical, horizontal" and "top, bottom", etc., are generally based on the orientation or positional relationship shown in the drawings, and are used for convenience of description and simplicity of description only, and in the absence of any contrary indication, these directional terms are not intended to indicate and imply that the device or element so referred to must have a particular orientation or be constructed and operated in a particular orientation, and therefore should not be considered as limiting the scope of the present invention: the terms "inner and outer" refer to the inner and outer relative to the profile of the respective component itself.
Spatially relative terms, such as "above … …," "above … …," "above … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial relationship to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, devices described as "above" or "on" other devices or configurations would then be oriented "below" or "under" the other devices or configurations. Thus, the exemplary term "above … …" can include both an orientation of "above … …" and "below … …". The device may be otherwise variously oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
It should be noted that the terms "first", "second", and the like are used to define the components, and are only used for convenience of distinguishing the corresponding components, and the terms have no special meanings unless otherwise stated, and therefore, the scope of the present invention should not be construed as being limited.
The invention discloses a preparation process of a multilayer ceramic capacitor, and particularly relates to a preparation process of a multilayer ceramic capacitor, as shown in figure 2, a plurality of small-size ceramic chip monomers with interlayer cavity structures (as shown in figures 4 and 5) are obtained after grouting, glue discharging and demoulding are carried out on a mould 1 with a plurality of small-size multilayer ceramic capacitor unit modules 11 (as shown in figure 3), conductive metal (as shown in figures 6 and 7) is filled into the interlayer cavity structures of the small-size ceramic chip monomers to obtain a multilayer ceramic capacitor blank, and then slurry dipping and electroplating are carried out to complete the preparation of the multilayer ceramic capacitor.
The mould 1 at least comprises 10 × 10 small-size multilayer ceramic capacitor unit modules, the mould 1 is of an upper-lower-side mould closing structure, a grouting inlet 12 and an exhaust port 13 are formed in the position, corresponding to each small-size multilayer ceramic capacitor unit module 11, on the upper-layer mould, and the sizes of the two calibers are determined according to the size of the MLCC.
As shown in fig. 3, the small-sized multilayer ceramic capacitor cell module 11 is a continuous-few-shaped structure 14 having an interlayer cavity. An interlayer cavity barrier 15 is also arranged on the upper layer die and used for blocking the interlayer cavity.
The slurry for grouting is high-viscosity ceramic slurry, the viscosity of the slurry is 50-100 Pa.S @100rpm, and preferably 60-80 Pa.S @100 rpm. The high-viscosity ceramic slurry is prepared by ceramic powder, an organic solvent, a dispersing agent and a plasticizer according to a preset proportion, and is ball-milled on a sand mill until the standard for standby.
And the glue discharging is that after grouting, an upper layer die is removed, the ceramic slurry injected into the die 1 is subjected to glue discharging treatment, the glue discharging temperature is 200-400 ℃, the glue discharging time is at least 24 hours, sintering is carried out at 900-1300 ℃ after glue discharging, and then subsequent demolding is carried out.
And (3) demolding the lower-layer mold after binder removal and sintering, inverting the mold 1 above a collecting device, and enabling the small-size ceramic chip monomer to fall off through ultrasonic oscillation.
The filling conductive metal is metal nickel or copper filled by sputtering metal nickel or a physical vapor deposition mode.
The material of the mould is made of steel material with small deformation after heating, generally made of invar steel, and the purpose is to prevent the mould from deforming during heating.
The nano film layer which is easy to demould is plated in the die cavity, so that the nano film layer plays a role in smoothing and is beneficial to demoulding of the ceramic dielectric layer.
Example 1
A preparation process of a multilayer ceramic capacitor adopts a mold 1 covering 10000 small-size multilayer ceramic capacitor unit modules 11, the mold is a matrix of 100 x 100, the structure of each unit is shown in figure 3, the whole mold 1 consists of an upper layer and a lower layer, the white part is empty, a grouting inlet 12 and an exhaust port 13 are arranged on the upper layer of the mold corresponding to each small-size multilayer ceramic capacitor unit module 11, wherein the grouting inlet 12 is used for injecting ceramic dielectric layer slurry, and the slurry flows out from the exhaust port 13 after being filled with the slurry.
The preparation process comprises the following steps:
s1, preparing the selected ceramic powder, organic solvent, dispersant and plasticizer into slurry according to the proportion of 90:5.5:4:0.5, and placing the slurry on a sand mill for ball milling; the slurry can adopt X5R/X7R or slurry for MLCC medium layers of NPO;
s2, placing the ball-milled slurry on a die 1 for injection, (injecting high-viscosity ceramic slurry, wherein the viscosity of the slurry is 50-100 Pa.S @100 rpm);
s3, removing the upper layer die after slurry is injected, carrying out glue discharging treatment on the ceramic slurry injected on the die, wherein the glue discharging temperature is 200-400 ℃, the glue discharging time is 24 hours (the glue discharging temperature is determined according to the numerical value added in the ceramic dielectric layer slurry), sintering at 900-1300 ℃ after glue discharging, and then carrying out subsequent demoulding;
s4, after binder removal and sintering, demolding the lower layer die, firstly, preparing a ceramic blank collecting device, inverting the die 1 above the collecting device, placing the die 1 on an ultrasonic generator, and enabling the small-size ceramic wafer monomer to fall into the collecting device through ultrasonic vibration;
s5, placing the demolded small-size ceramic chip monomer on PVD equipment to sputter metal nickel, and filling the inner interlayer cavity, wherein one filled side is filled with the other filled side as shown in FIGS. 6 and 7; it can also adopt physical vapor deposition of metal nickel or copper, and also can turn over and fill the other side after filling one side.
S6, carrying out a copper paste dipping process on the prepared blank;
s7, electroplating nickel layer and tin layer to complete the preparation of the multilayer ceramic capacitor.
As shown in fig. 8 and 9, it can be seen that the difference between the conventional process and the preparation process of the present invention is that, in the conventional process, the metal layer and the ceramic layer are both de-glued and sintered, and the metal layer and the ceramic layer have a larger adaptation rate due to the sintering process, and the stress problem, the cracking problem and the capacity value problem are prominent; the process of the invention firstly prepares the ceramic layer, then carries out glue removal and sintering on the ceramic layer, and then completes the manufacture of filling the ceramic layer with the metal layer, the metal layer and the ceramic layer are not co-fired together, because the ceramic layer and the metal layer are not co-sintered, the interlayer structure is clear and visible, the problem of large stress can not exist, the cracking problem can be effectively solved, and also, because the shrinkage of the metal layer does not exist, the effective area of the metal layer is increased, and the capacity value is improved.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A preparation process of a multilayer ceramic capacitor is characterized in that a plurality of small-size ceramic chip monomers with interlayer cavity structures are obtained after grouting, glue discharging, sintering and demolding are carried out on a mold with a plurality of small-size multilayer ceramic capacitor unit modules, conductive metal is filled in the interlayer cavity structures of the small-size ceramic chip monomers to obtain a multilayer ceramic capacitor blank, and then slurry dipping and electroplating are carried out to complete the preparation of the multilayer ceramic capacitor.
2. The process for preparing a multilayer ceramic capacitor according to claim 1, wherein the mold comprises at least 10 × 10 small-sized multilayer ceramic capacitor unit modules, the mold has a top-bottom side mold clamping structure, and a grouting inlet and an exhaust port are provided at positions on the top mold corresponding to each small-sized multilayer ceramic capacitor unit module.
3. The process for producing a multilayer ceramic capacitor as claimed in claim 1, wherein the small-sized multilayer ceramic capacitor unit modules have a continuous-type structure having interlayer cavities.
4. The process for preparing a multilayer ceramic capacitor according to claim 1, wherein the slurry for grouting is a high-viscosity ceramic slurry, and the viscosity of the slurry is 50 to 100Pa.S @100 rpm.
5. The process for preparing a multilayer ceramic capacitor according to claim 4, wherein the high-viscosity ceramic slurry is prepared by preparing ceramic powder, an organic solvent, a dispersant and a plasticizer into slurry according to a preset proportion and ball-milling the slurry on a sand mill until the slurry is ready for use.
6. The process for preparing a multilayer ceramic capacitor according to claim 2, wherein the step of binder removal is to remove the upper mold after grouting, to remove the binder from the ceramic slurry injected into the mold at a temperature of 200 to 400 ℃ for at least 24 hours, to sinter the ceramic slurry at 900 to 1300 ℃ after binder removal, and to subsequently demold the ceramic capacitor.
7. The process for producing a multilayer ceramic capacitor according to claim 6, wherein the lower mold is subjected to a mold release treatment by inverting the mold over a collecting device and then releasing the small-sized ceramic sheet monomer by ultrasonic vibration.
8. The process for preparing a multilayer ceramic capacitor according to claim 1, wherein the conductive metal is filled with metallic nickel or copper by sputtering metallic nickel or physical vapor deposition.
9. The process for producing a multilayer ceramic capacitor as claimed in claim 1, wherein the mold is made of a steel material which deforms little by heating.
10. The process for preparing a multilayer ceramic capacitor according to claim 1, wherein the inside of the mold cavity is plated with a nano-film layer which is easy to release from the mold.
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| CN202110026327.6A CN112652487A (en) | 2021-01-08 | 2021-01-08 | Preparation process of multilayer ceramic capacitor |
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| CN202110026327.6A CN112652487A (en) | 2021-01-08 | 2021-01-08 | Preparation process of multilayer ceramic capacitor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115894047A (en) * | 2022-12-28 | 2023-04-04 | 福建华清电子材料科技有限公司 | Preparation method of tube shell for Mos packaging |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2919483A (en) * | 1955-03-21 | 1960-01-05 | Clevite Corp | Method of forming ceramic capacitors |
| CA1052874A (en) * | 1976-04-12 | 1979-04-17 | James A. Stynes | Method of forming ceramic capacitors and circuit boards |
| US6579600B1 (en) * | 1996-07-25 | 2003-06-17 | Materials Systems, Inc. | Multilayer capacitor and method |
| CN103465410A (en) * | 2012-06-06 | 2013-12-25 | 视霸光学股份有限公司 | Ultrasonic demoulding device and method for using ultrasonic demoulding device to make contact lens |
-
2021
- 2021-01-08 CN CN202110026327.6A patent/CN112652487A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2919483A (en) * | 1955-03-21 | 1960-01-05 | Clevite Corp | Method of forming ceramic capacitors |
| CA1052874A (en) * | 1976-04-12 | 1979-04-17 | James A. Stynes | Method of forming ceramic capacitors and circuit boards |
| US6579600B1 (en) * | 1996-07-25 | 2003-06-17 | Materials Systems, Inc. | Multilayer capacitor and method |
| CN103465410A (en) * | 2012-06-06 | 2013-12-25 | 视霸光学股份有限公司 | Ultrasonic demoulding device and method for using ultrasonic demoulding device to make contact lens |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115894047A (en) * | 2022-12-28 | 2023-04-04 | 福建华清电子材料科技有限公司 | Preparation method of tube shell for Mos packaging |
| CN115894047B (en) * | 2022-12-28 | 2024-03-22 | 福建华清电子材料科技有限公司 | Preparation method of tube shell for Mos packaging |
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