CN112640151A - OLED device and preparation method thereof, and raw material solution for spin coating film forming - Google Patents
OLED device and preparation method thereof, and raw material solution for spin coating film forming Download PDFInfo
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- 238000004528 spin coating Methods 0.000 title claims abstract description 51
- 239000002994 raw material Substances 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title abstract description 24
- QPJVMBTYPHYUOC-UHFFFAOYSA-N methyl benzoate Chemical compound COC(=O)C1=CC=CC=C1 QPJVMBTYPHYUOC-UHFFFAOYSA-N 0.000 claims abstract description 110
- 230000005525 hole transport Effects 0.000 claims abstract description 56
- 229940095102 methyl benzoate Drugs 0.000 claims abstract description 55
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000002904 solvent Substances 0.000 claims abstract description 40
- 238000001035 drying Methods 0.000 claims abstract description 10
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 130
- 239000000243 solution Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 34
- 239000000203 mixture Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000012527 feed solution Substances 0.000 claims 3
- 239000010410 layer Substances 0.000 description 126
- 238000002347 injection Methods 0.000 description 32
- 239000007924 injection Substances 0.000 description 32
- 239000010408 film Substances 0.000 description 20
- 239000011248 coating agent Substances 0.000 description 14
- 238000000576 coating method Methods 0.000 description 14
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 14
- 238000004806 packaging method and process Methods 0.000 description 14
- 239000000758 substrate Substances 0.000 description 10
- 238000001704 evaporation Methods 0.000 description 9
- 230000008020 evaporation Effects 0.000 description 9
- 239000002346 layers by function Substances 0.000 description 9
- 238000007738 vacuum evaporation Methods 0.000 description 9
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 description 8
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000005281 excited state Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 230000008707 rearrangement Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- MAGFQRLKWCCTQJ-UHFFFAOYSA-M 4-ethenylbenzenesulfonate Chemical compound [O-]S(=O)(=O)C1=CC=C(C=C)C=C1 MAGFQRLKWCCTQJ-UHFFFAOYSA-M 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- -1 imidazole-2-yl Chemical group 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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Abstract
A raw material solution for spin coating film formation, an OLED device prepared by using the raw material solution and a preparation method thereof. The preparation method comprises the following steps: preparing a raw material solution, wherein a solute of the raw material solution is 4,4' -cyclohexylidene bis [ N, N-bis (4-methylphenyl) aniline ] (TAPC), and a solvent is added with methyl benzoate; spin-coating the raw material solution, and drying the solvent to obtain a hole transport layer; OLED devices were prepared based on hole transport layers. According to the preparation method of the OLED, when TAPC is spin-coated to serve as a hole transport layer, methyl benzoate is added into a solvent, so that the mobility of the hole transport layer and the current efficiency of an OLED device are improved, and the performance of the OLED device is improved.
Description
The application relates to the technical field of display, in particular to an OLED device, a preparation method thereof and a raw material solution for spin coating film forming.
Organic Light-Emitting diodes (OLEDs) are self-Emitting devices, which draw attention to the advantages of thin profile, large area, flexibility, and the like, and have important applications in the fields of display and illumination.
A typical OLED device has an anode, an organic functional layer, and a cathode sequentially formed on a substrate. The organic functional layers of the OLED device may have different structures according to different designs or needs, for example, the organic functional layers include a hole transport layer for injection and transport of holes. The preparation process of the hole transport layer greatly affects the performance and long-term stability of the OLED device.
The inventor finds that the hole transport layer prepared by using the traditional material and the spin coating method has low current efficiency and poor performance of the OLED device, although the process is simple and the manufacturing cost is low.
Disclosure of Invention
The application aims to provide a preparation method of an OLED device, the OLED device and a raw material solution for spin coating film forming, so as to solve the technical problems of low current efficiency and poor device performance of the OLED device obtained by the traditional preparation process.
In order to solve the above technical problem, one technical solution adopted in the embodiments of the present application is: provided is a method for manufacturing an OLED device, including: preparing a raw material solution, wherein the solute of the raw material solution is TAPC, and methyl benzoate is added into a solvent; spin-coating the raw material solution, and drying the solvent to obtain a hole transport layer; and preparing the OLED device based on the hole transport layer.
Optionally, the solvent is a mixture of toluene and methyl benzoate, and the addition volume of the methyl benzoate is 1% -5% of the addition volume of the toluene.
Optionally, the solvent is a mixture of toluene and methyl benzoate, and the addition volume of the methyl benzoate is 2-4% of the addition volume of the toluene.
Alternatively, the solvent is a mixture of toluene and methyl benzoate, and the volume of methyl benzoate added is 3% of the volume of toluene added.
Optionally, the spin-coating speed of the raw material solution is 18000rpm/min to 24000rpm/min, and the spin-coating time is 10s to 2 min.
In order to solve the above technical problem, another technical solution adopted in the embodiment of the present application is: the OLED device is prepared according to the preparation method.
In order to solve the above technical problem, another technical solution adopted in the embodiment of the present application is: the raw material solution for spin coating film formation is provided and applied to an OLED device, and comprises: (4,4 '-cyclohexylidenebis [ N, N-bis (4-methylphenyl) aniline ]) and a solvent dissolving the (4,4' -cyclohexylidenebis [ N, N-bis (4-methylphenyl) aniline ]), the solvent including methyl benzoate.
Optionally, the solvent is a mixture of toluene and methyl benzoate, and the addition volume of the methyl benzoate is 1% -5% of the addition volume of the toluene.
Optionally, the solvent is a mixture of toluene and methyl benzoate, and the addition volume of the methyl benzoate is 2-4% of the addition volume of the toluene.
Alternatively, the solvent is a mixture of toluene and methyl benzoate, and the volume of methyl benzoate added is 3% of the volume of toluene added.
According to the preparation method of the OLED, when (4,4' -cyclohexylidene bis [ N, N-bis (4-methylphenyl) aniline ]) is spin-coated to serve as a hole transport layer, methyl benzoate is added into a solvent, so that the performance of the hole transport layer is improved, the mobility of the hole transport layer and the current efficiency of an OLED device are improved, the preparation process is simple, the cost is low, and meanwhile, the performance of the OLED device is greatly improved.
Fig. 1 is a schematic structural diagram of an OLED device provided in an embodiment of the present application;
FIG. 2 is a graph of current density versus current efficiency for an OLED device provided by an embodiment of the present application;
FIG. 3 is a voltage-current density graph of an OLED device provided by an embodiment of the present application.
In order to make the objects, aspects and advantages of the present application more apparent, the present application will be described in further detail with reference to the following examples. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application. In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
A typical OLED device has an anode, an organic functional layer, and a cathode sequentially formed on a substrate. The organic functional layer may generally comprise a single layer or a multilayer structure. The examples of the present application are illustrated with the organic functional layers of a conventional OLED device as a multilayer structure. Referring to fig. 1 in detail, fig. 1 is a schematic structural diagram of an OLED device 100 provided in an embodiment of the present disclosure, and as shown in fig. 1, the OLED device 100 includes an anode 20, a hole injection layer 30, a hole transport layer 40, a light emitting layer 50, an electron transport layer 60, an electron injection layer 70, and a cathode 80 sequentially stacked on a substrate 10.
The preparation process of the OLED device shown in fig. 1 mainly involves two aspects of surface treatment and preparation of each layer of thin film. The preparation process of each layer of film mainly comprises an evaporation technology under high vacuum, wet rotation and wet ink-jet printing. The preparation process of each layer is selected as follows:
the hole injection layer 30 is prepared by wet spin coating, the hole transport layer 40 is prepared by evaporation or wet spin coating, the light emitting layer 50 is prepared by wet inkjet printing, and the electron transport layer 60 and the electron injection layer 70 are prepared by vacuum evaporation to obtain the final OLED device 100.
Wherein, the materials of the traditional hole transport layer are selected from: TAPC (4,4' -cyclohexylidene bis [ N, N-bis (4-methylphenyl) aniline ]), the lowest excited state of the TAPC is higher than the highest excited state of the material of the light-emitting layer, a compound cannot be formed with the material of the light-emitting layer in the excited state, and the affinity of the TAPC for electrons is low, so that holes can be conveniently injected from a metal cathode. Because TAPC also has the characteristics of high temperature resistance and good film forming property, the TAPC can be formed into a film on other functional layers of the OLED device through the vacuum evaporation or wet spin coating process.
Vacuum evaporation is to heat TAPC in a vacuum environment and gasify it to condense it to form a solid film; the wet spin coating is to dissolve TAPC in a proper organic solvent to prepare a solution with a proper concentration. And then, the solution is spin-coated on other functional layers by adjusting the rotating speed of the spin coater, and is dried to be fixed into a film. The OLED device is prepared by vacuum evaporation, the film forming quality of a hole transport layer is good, the precision is easy to control, the process is complex, and the cost is high. The OLED device prepared by wet spin coating has the advantages of simple process, low cost and easy realization, but the film forming quality is not easy to control.
The quality of a hole transport layer of the OLED device prepared by the wet spin coating process is not easy to control, so that the working voltage of the OLED device is high, the current efficiency of the device is low, and the performance of the OLED device is influenced.
Based on this, the embodiment of the application improves the conventional method for preparing the hole transport layer of the OLED device by using the spin coating method, so as to obtain the hole transport layer with simple process and good film forming quality.
The embodiment of the application firstly provides a preparation method for preparing an OLED device, which comprises the following steps:
step 1, preparing a raw material solution, wherein a solute of the raw material solution is TAPC, and methyl benzoate is added into a solvent.
The raw material solution is a raw material solution for dissolving TAPC, and in this embodiment, the raw material solution includes: TAPC and a solvent for dissolving TAPC, wherein the solvent is a mixture of toluene and methyl benzoate.
Preferably, the addition volume of the methyl benzoate is 1% -5% of that of the toluene, and the methyl benzoate is added into the solvent to help the TAPC molecules to rearrange, so that a hole transport layer with good film forming quality is obtained.
And 2, spin-coating the raw material solution, and drying the solvent to obtain the hole transport layer.
This step may be performed by spin-coating the raw material solution on the other functional layers using a spin coater to obtain the hole transport layer. And the thickness of the hole transport layer is controlled by adjusting the concentration of the raw material solution and controlling the rotating speed of the spin coater.
And 3, preparing the OLED device based on the hole transport layer.
The preparation methods of other layers of the OLED device can be realized based on the conventional technology, and are not described herein again.
The embodiment of the application also provides an OLED device, and the OLED device is prepared by the preparation method. The OLED device prepared by the method has high mobility of the hole transport layer, so that the performance of the whole OLED device is improved.
According to the preparation method of the OLED, when TAPC is spin-coated as a hole transport layer, toluene is used as a solvent, and methyl benzoate is added, so that the performance of the hole transport layer is improved, the mobility of the hole transport layer and the current efficiency of the OLED device are improved, and the performance of the OLED device is greatly improved while the preparation process is simple.
The method for fabricating the OLED device is described in detail below with reference to specific examples.
Example 1
1. Photoetching and coating an ITO (indium tin oxide) anode on a clean conductive substrate;
2. spin coating PEDOT on the anode: PSS (poly (3, 4-ethylenedioxythiophene)/poly (4-styrenesulfonate)) formed a hole injection layer with a hole injection layer thickness of 60 nm;
3. spin-coating a TAPC solution on the hole injection layer at the speed of 2000rpm/min for 1min, and drying in a 120 ℃ oven for 30min to obtain a hole transport layer with the thickness of 30 nm; the solvents in the TAPC solution were: toluene and methyl benzoate, wherein the addition volume of the methyl benzoate is 1 percent of that of the toluene;
4. coating CBP (4,4 '-bis (N-carbazolyl) -1,1' -biphenyl) on the hole transport layer by an ink-jet process to form a light-emitting layer, wherein the thickness of the light-emitting layer is 30 nm;
5. TPBi (1,3, 5-tri (1-phenyl-1H-benzo [ d ] imidazole-2-yl) phenyl), lithium fluoride and aluminum are sequentially evaporated on the light-emitting layer through an evaporation process to form an electron transport layer with the thickness of 35nm, an electron injection layer with the thickness of 1nm and a cathode with the thickness of 100 nm.
6. And integrally packaging each layer by adopting a packaging cover plate to prepare the OLED device.
Example 2
1. Photoetching and coating an ITO anode on a clean conductive substrate;
2. spin coating PEDOT on the anode: PSS forms a hole injection layer, and the thickness of the hole injection layer is 60 nm;
3. spin-coating a TAPC solution on the hole injection layer at the speed of 2000rpm/min for 1min, and drying in a 120 ℃ oven for 30min to obtain a hole transport layer with the thickness of 30 nm; the solvents in the TAPC solution were: toluene and methyl benzoate, wherein the addition volume of the methyl benzoate is 2 percent of that of the toluene;
4. coating CBP on the hole transport layer by an ink-jet process to form a light-emitting layer, wherein the thickness of the light-emitting layer is 30 nm;
5. TPBi, lithium fluoride and aluminum are sequentially evaporated on the luminous layer through an evaporation process to form an electron transport layer with the thickness of 35nm, an electron injection layer with the thickness of 1nm and a cathode with the thickness of 100 nm.
6. And integrally packaging each layer by adopting a packaging cover plate to prepare the OLED device.
Example 3
1. Photoetching and coating an ITO anode on a clean conductive substrate;
2. spin coating PEDOT on the anode: PSS forms a hole injection layer, and the thickness of the hole injection layer is 60 nm;
3. spin-coating a TAPC solution on the hole injection layer at the speed of 2000rpm/min for 1min, and drying in a 120 ℃ oven for 30min to obtain a hole transport layer with the thickness of 30 nm; the solvents in the TAPC solution were: toluene and methyl benzoate, wherein the addition volume of the methyl benzoate is 3 percent of that of the toluene;
4. coating CBP on the hole transport layer by an ink-jet process to form a light-emitting layer, wherein the thickness of the light-emitting layer is 30 nm;
5. TPBi, lithium fluoride and aluminum are sequentially evaporated on the luminous layer through an evaporation process to form an electron transport layer with the thickness of 35nm, an electron injection layer with the thickness of 1nm and a cathode with the thickness of 100 nm.
6. And integrally packaging each layer by adopting a packaging cover plate to prepare the OLED device.
Example 4
1. Photoetching and coating an ITO anode on a clean conductive substrate;
2. spin coating PEDOT on the anode: PSS forms a hole injection layer, and the thickness of the hole injection layer is 60 nm;
3. spin-coating a TAPC solution on the hole injection layer at the speed of 2000rpm/min for 1min, and drying in a 120 ℃ oven for 30min to obtain a hole transport layer with the thickness of 30 nm; the solvents in the TAPC solution were: toluene and methyl benzoate, wherein the addition volume of the methyl benzoate is 4 percent of that of the toluene;
4. coating CBP on the hole transport layer by an ink-jet process to form a light-emitting layer, wherein the thickness of the light-emitting layer is 30 nm;
5. TPBi, lithium fluoride and aluminum are sequentially evaporated on the luminous layer through an evaporation process to form an electron transport layer with the thickness of 35nm, an electron injection layer with the thickness of 1nm and a cathode with the thickness of 100 nm.
6. And integrally packaging each layer by adopting a packaging cover plate to prepare the OLED device.
Example 5
1. Photoetching and coating an ITO anode on a clean conductive substrate;
2. spin coating PEDOT on the anode: PSS forms a hole injection layer, and the thickness of the hole injection layer is 60 nm;
3. spin-coating a TAPC solution on the hole injection layer at the speed of 2000rpm/min for 1min, and drying in a 120 ℃ oven for 30min to obtain a hole transport layer with the thickness of 30 nm; the solvents in the TAPC solution were: toluene and methyl benzoate, wherein the addition volume of the methyl benzoate is 5 percent of that of the toluene;
4. coating CBP on the hole transport layer by an ink-jet process to form a light-emitting layer, wherein the thickness of the light-emitting layer is 30 nm;
5. TPBi, lithium fluoride and aluminum are sequentially evaporated on the luminous layer through an evaporation process to form an electron transport layer with the thickness of 35nm, an electron injection layer with the thickness of 1nm and a cathode with the thickness of 100 nm.
6. And integrally packaging each layer by adopting a packaging cover plate to prepare the OLED device.
Comparative example 1
1. Photoetching and coating an ITO anode on a clean conductive substrate;
2. spin coating PEDOT on the anode: PSS forms a hole injection layer, and the thickness of the hole injection layer is 60 nm;
3. spin-coating a TAPC solution on the hole injection layer at the speed of 2000rpm/min for 1min, and drying in a 120 ℃ oven for 30min to obtain a hole transport layer with the thickness of 30 nm; the solvents in the TAPC solution were: toluene;
4. coating CBP on the hole transport layer by an ink-jet process to form a light-emitting layer, wherein the thickness of the light-emitting layer is 30 nm;
5. TPBi, lithium fluoride and aluminum are sequentially evaporated on the luminous layer through an evaporation process to form an electron transport layer with the thickness of 35nm, an electron injection layer with the thickness of 1nm and a cathode with the thickness of 100 nm.
6. And integrally packaging each layer by adopting a packaging cover plate to prepare the OLED device.
Comparative example 2
1. Photoetching and coating an ITO anode on a clean conductive substrate;
2. spin coating PEDOT on the anode: PSS forms a hole injection layer, and the thickness of the hole injection layer is 60 nm;
3. the TAPC is heated in a vacuum atmosphere and vaporized to condense to form a solid film, thereby obtaining a hole transport layer.
4. Coating CBP on the hole transport layer by an ink-jet process to form a light-emitting layer, wherein the thickness of the light-emitting layer is 30 nm;
5. TPBi, lithium fluoride and aluminum are sequentially evaporated on the luminous layer through an evaporation process to form an electron transport layer with the thickness of 35nm, an electron injection layer with the thickness of 1nm and a cathode with the thickness of 100 nm.
6. And integrally packaging each layer by adopting a packaging cover plate to prepare the OLED device.
The OLED devices prepared in the above examples 1-5 and comparative examples 1 and 2 were tested for electrical properties, i.e., the relationship between current density and current efficiency and the relationship between voltage and current density, and the test results are shown in FIGS. 2 and 3; the results of the test for operating voltage and current efficiency are shown in table 1 below.
TABLE 1
As can be seen from FIG. 2, the current efficiency of the OLED device is between 5.0 Cd/A and 6.2Cd/A, and the current increases and then decreases. At 3% by volume of methyl benzoate, the current efficiency and current density of the OLED device approach the performance level of the vacuum evaporation OLED device.
As can be seen from fig. 3, the current density of the OLED device reaches the maximum and does not increase any more when the operating voltage is between 5V and 6V, and compared with the preparation of the hole transport layer by wet spin coating, the vacuum evaporation OLED device has the minimum voltage, the maximum current density and good current stability, but when the volume of the methyl benzoate is 3%, the current density is close to that of vacuum evaporation.
The inventor discovers that in the process of implementing the invention: according to the traditional technology, when an OLED device is prepared by a spin-coating method, methylbenzene is used as a solvent to dissolve TAPC, when the methylbenzene is used as the solvent, the methylbenzene is quickly volatilized, TAPC molecules can randomly accumulate due to too late rearrangement to form an amorphous film, so that the hole mobility of a hole transport layer is low, and the transport performance of the whole OLED device is influenced.
After methyl benzoate is added into toluene, due to the high boiling point of methyl benzoate, after spin coating film formation, volatilized methyl benzoate can remain in the hole transport layer, the methyl benzoate can promote TAPC rearrangement, and microcrystals are formed in the hole transport layer, so that the mobility of the hole transport layer is increased, and the performance of the OLED device is improved.
From the above test results, when the hole transport layer is prepared by the spin coating method, compared with the conventional method in which a single toluene is used as a solvent, when 1% -5% by volume of methyl benzoate is added to the toluene solvent, the working voltage tends to decrease, and the current efficiency tends to increase, and when the volume of methyl benzoate is 3%, the working voltage is the minimum, the current efficiency is the highest, and the performance of the OLED device is the best, which is close to the performance level of the vacuum evaporation OLED device.
In the case of spin coating to prepare the hole transport layer according to examples 1 to 5 and comparative example 1, the spin coating speed was 20000rpm/min and the spin coating time was 30 seconds. But the proper spin coating speed can be 18000 rpm/min-24000 rpm/min, and the proper spin coating time can be 10s-2 min; also, a larger spin coating speed means a shorter spin coating time. The spin coating speed and time can ensure the thickness of the hole transport layer, and simultaneously can throw off impurities to ensure the cleaning of the hole transport layer film, and the performance of the obtained OLED device is optimal within the limited spin coating speed and the limited spin coating time range.
According to the OLED device provided by the embodiment of the application, when TAPC is spin-coated as a hole transport layer, toluene is used as a solvent, and 1-5% of methyl benzoate is added, so that the performance of a hole transport layer film is improved, the mobility of the hole transport layer film and the current efficiency of the device are improved, and the working voltage of the device is reduced. Compared with vacuum evaporation, the preparation method is simple in preparation process, low in cost, easy to realize and reliable in film forming quality.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings, or which are directly or indirectly applied to other related technical fields, are intended to be included within the scope of the present application.
Claims (10)
- A method for manufacturing an OLED device, comprising:preparing a raw material solution, wherein a solute of the raw material solution is TAPC, and a solvent is added with methyl benzoate;spin-coating the raw material solution, and drying the solvent to obtain a hole transport layer;and preparing the OLED device based on the hole transport layer.
- The method according to claim 1, wherein the solvent is a mixture of toluene and methyl benzoate, and the addition volume of the methyl benzoate is 1-5% of the addition volume of the toluene.
- The method according to claim 2, wherein the solvent is a mixture of toluene and methyl benzoate, and the addition volume of the methyl benzoate is 2-4% of the addition volume of the toluene.
- The method according to claim 3, wherein the solvent is a mixture of toluene and methyl benzoate, and the volume of the methyl benzoate added is 3% of the volume of the toluene added.
- The method according to claim 1, wherein the spin speed of the spin coating of the raw material solution is 18000rpm/min to 24000rpm/min, and the spin coating time is 10s to 2 min.
- An OLED device, characterized in that it is produced according to the production method of any one of claims 1 to 5.
- A raw material solution for spin coating film formation, which is applied to an OLED device, is characterized by comprising:(4,4 '-cyclohexylidenebis [ N, N-bis (4-methylphenyl) aniline ]) and a solvent dissolving the (4,4' -cyclohexylidenebis [ N, N-bis (4-methylphenyl) aniline ]), the solvent including methyl benzoate.
- The feed solution of claim 7, wherein the solvent is a mixture of toluene and methyl benzoate, and wherein the volume of methyl benzoate added is 1% to 5% of the volume of toluene added.
- The feed solution of claim 8, wherein the solvent is a mixture of toluene and methyl benzoate, and wherein the volume of methyl benzoate added is 2% to 4% of the volume of toluene added.
- The feed solution of claim 9, wherein the solvent is a mixture of toluene and methyl benzoate, and wherein the volume of methyl benzoate added is 3% of the volume of toluene added.
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| Application Number | Priority Date | Filing Date | Title |
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| PCT/CN2018/119893 WO2020113574A1 (en) | 2018-12-07 | 2018-12-07 | Oled device and preparation method therefor, and raw material solution for spin-coating film formation |
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| CN112640151A true CN112640151A (en) | 2021-04-09 |
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| CN201880095919.XA Pending CN112640151A (en) | 2018-12-07 | 2018-12-07 | OLED device and preparation method thereof, and raw material solution for spin coating film forming |
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| CN101120459A (en) * | 2005-02-15 | 2008-02-06 | 三菱化学株式会社 | Film forming composition and organic electroluminescent device |
| CN102124588A (en) * | 2008-07-21 | 2011-07-13 | 剑桥显示技术有限公司 | Compositions and methods for manufacturing light-emissive devices |
| WO2016198141A1 (en) * | 2015-06-12 | 2016-12-15 | Merck Patent Gmbh | Esters containing non-aromatic cycles as solvents for oled formulations |
| CN106633005A (en) * | 2017-01-04 | 2017-05-10 | 华南理工大学 | Triphenylamine polymers containing oligomeric ether side chains and application of triphenylamine polymers in preparation of organic photoelectric device by solution method |
| WO2017216128A1 (en) * | 2016-06-17 | 2017-12-21 | Merck Patent Gmbh | Formulation of an organic functional material |
| WO2018017288A1 (en) * | 2016-07-20 | 2018-01-25 | E. I. Du Pont De Nemours And Company | Electroactive materials |
| CN107925001A (en) * | 2015-08-11 | 2018-04-17 | E.I.内穆尔杜邦公司 | Hole mobile material |
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| WO2013142634A1 (en) * | 2012-03-23 | 2013-09-26 | E. I. Du Pont De Nemours And Company | Green luminescent materials |
| CN107108861B (en) * | 2014-11-20 | 2019-11-12 | 株式会社Lg化学 | Hole mobile material |
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| CN101120459A (en) * | 2005-02-15 | 2008-02-06 | 三菱化学株式会社 | Film forming composition and organic electroluminescent device |
| CN102124588A (en) * | 2008-07-21 | 2011-07-13 | 剑桥显示技术有限公司 | Compositions and methods for manufacturing light-emissive devices |
| WO2016198141A1 (en) * | 2015-06-12 | 2016-12-15 | Merck Patent Gmbh | Esters containing non-aromatic cycles as solvents for oled formulations |
| CN107925001A (en) * | 2015-08-11 | 2018-04-17 | E.I.内穆尔杜邦公司 | Hole mobile material |
| WO2017216128A1 (en) * | 2016-06-17 | 2017-12-21 | Merck Patent Gmbh | Formulation of an organic functional material |
| WO2018017288A1 (en) * | 2016-07-20 | 2018-01-25 | E. I. Du Pont De Nemours And Company | Electroactive materials |
| CN106633005A (en) * | 2017-01-04 | 2017-05-10 | 华南理工大学 | Triphenylamine polymers containing oligomeric ether side chains and application of triphenylamine polymers in preparation of organic photoelectric device by solution method |
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