CN110416423B - QLED device and preparation method thereof - Google Patents

QLED device and preparation method thereof Download PDF

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CN110416423B
CN110416423B CN201810878221.7A CN201810878221A CN110416423B CN 110416423 B CN110416423 B CN 110416423B CN 201810878221 A CN201810878221 A CN 201810878221A CN 110416423 B CN110416423 B CN 110416423B
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余磊
宋晶尧
付东
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Guangdong Juhua Printing Display Technology Co Ltd
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Abstract

The invention relates to a QLED device and a preparation method thereof, wherein the QLED device comprises a light-emitting layer, the light-emitting layer comprises quantum dot materials and organic nanowires, and the organic nanowires are uniformly distributed in the quantum dot materials. The QLED device can improve hole transmission capability and reduce electron current by uniformly doping the organic nanowires in the light-emitting layer, thereby balancing injection and transmission of current carriers and improving device performance.

Description

QLED device and preparation method thereof
Technical Field
The invention relates to the technical field of light emitting diodes, in particular to a QLED device and a preparation method thereof.
Background
Quantum dot light-emitting diodes (QLEDs) have a broad application prospect in large area display and are receiving wide attention because they have the advantages of high color saturation, adjustable light emission color, high photoluminescence efficiency, and solution-soluble processing (spin coating, inkjet printing).
During the synthesis process of the quantum dot material, a plurality of dangling bonds and surface defect states exist on the surface, so that the light stability of the quantum dot material is poor. Therefore, quantum dot materials used in light emitting devices are generally passivated by growing a wide band gap inorganic semiconductor shell on the outer layer of the quantum dot core or adding organic ligands such as surfactants on the surface of the quantum dot to improve the quantum dot efficiency and light stability.
At present, the performance of II-VI group semiconductor quantum dots based on Cd is the most outstanding in the aspects of luminous efficiency, color purity, luminous spectrum adjustability and the like, and the research on electroluminescent devices related to materials such as CdSe/ZnS, CdSe/CdS/ZnS and the like is the most. However, the electroluminescent efficiency and device lifetime of these devices are far from practical use, and therefore, devices based on semiconductor quantum dots of group II-VI of Cd are still in need of improvement and development.
Disclosure of Invention
In view of the above, there is a need for a QLED device capable of increasing hole current to improve the performance of the QLED device.
The applicant of the present invention finds that, in the current QLED device, most electrons are carriers, the performance of the device depends on the injection and transport conditions of holes, and since the highest occupied orbital (HOMO) level of the quantum dot material is mostly relatively deep (up to 6eV to 7eV), an excessively large hole injection barrier causes imbalance between injection and transport of carriers inside the device, and therefore, increasing hole current is an effective method for improving the performance of the device.
The QLED device is characterized by comprising a light emitting layer, wherein the light emitting layer comprises a quantum dot material and organic nanowires, and the organic nanowires are distributed in the quantum dot material.
In one embodiment, the concentration of the organic nanowires in the light emitting layer is 1wt% to 7 wt%. It can be understood that the concentration of the organic nanowire of 1wt% to 7wt% means that the mass of the organic nanowire accounts for 1wt% to 7wt% of the total mass of the light emitting layer.
In one embodiment, the material of the organic nanowire is a nanowire formed by a benzothiophene derivative.
Further, the material of the benzothiophene derivative is at least one selected from the group consisting of compounds having a structure represented by formula (1), formula (2), formula (3), formula (4), and formula (5):
Figure BDA0001753823600000021
Figure BDA0001753823600000031
wherein R is1And R2is-n-C12H25，R3、R4And R5Each independently selected from-n-C5H11A group and-n-C12H25One of the groups.
In one embodiment, the thickness of the light emitting layer is 20nm to 40nm, and the particle size of the organic nanowire is less than 10 nm. It is understood that the particle size of the organic nanowire refers to a lateral diameter of the organic nanowire.
In one embodiment, the QLED device includes a substrate, an anode, a hole injection layer, the light emitting layer, an electron transport layer, and a cathode, which are sequentially disposed.
In one embodiment, a difference between a LUMO (lowest unoccupied orbital) energy level of the organic nanowire in the light emitting layer and a LUMO energy level of the electron transporting layer is greater than or equal to 1.5 eV.
As a general inventive concept, another object of the present invention is to provide a method of manufacturing a QLED device, comprising the steps of:
forming a light emitting layer;
the step of forming the light emitting layer includes: depositing a luminescent layer solution, and drying to form a film to obtain the luminescent layer;
the luminescent layer solution comprises a quantum dot material and an organic material, the organic material is self-assembled to form organic nanowires in the process of drying the luminescent layer solution to form a film, and the organic nanowires are distributed in the quantum dot material.
In one embodiment, the method further comprises the step of preparing the light-emitting layer solution:
dissolving the organic material in an organic solvent to obtain a mixed solution, wherein the organic material is selected from benzothiophene derivatives;
dissolving the quantum dot material in an organic solvent to obtain quantum dot ink;
and blending the mixed solution with the quantum dot ink to obtain the luminescent layer solution.
In one embodiment, the temperature of the light emitting layer solution is 40 ℃ ± 2 ℃ when the light emitting layer solution is deposited.
The invention has the beneficial effects that:
1. according to the QLED device, the organic nanowires are doped in the light-emitting layer, so that hole transmission capacity can be improved, and electron current can be reduced, thus injection and transmission of carriers are balanced, and device performance is improved.
2. The benzothiophene derivative is selected as a forming material of the organic nanowire, the doping concentration is controlled to be 1-7 wt%, the temperature of a luminescent layer solution during deposition is 40 +/-2 ℃, the solvent volatilization is utilized to induce the self-assembly and growth of benzothiophene derivative molecules to form the nanowire, and the self-assembly growth and uniform distribution of the organic nanowire are realized in one step.
3. The compounds in the formulas (1) to (5) are highly substituted benzothiophene derivatives, all contain a plurality of S (sulfur) atoms, are easy to face-to-face stack through pi-pi conjugated interaction, and self-assemble to generate nanowires, so that the light-emitting layer has high hole transmission capability, and meanwhile, the electron current can be effectively reduced, and the effect of improving the performance of the device is achieved.
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Fig. 1 is a schematic structural diagram of a QLED device according to an embodiment of the present invention;
fig. 2 is a schematic diagram of an energy level structure of a QLED device according to an embodiment of the present invention.
Detailed Description
In order that the invention may be more fully understood, a more particular description of the invention will now be rendered by reference to specific embodiments thereof that are illustrated in the appended drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
As shown in fig. 1, the QLED device 10 according to an embodiment of the present invention includes, in order from bottom to top, a substrate 110, an anode 120, a hole injection layer 130, a light-emitting layer 140, an electron transport layer 150, and a cathode 160; the light-emitting layer 140 includes quantum dot materials and organic nanowires, and the organic nanowires are uniformly distributed in the quantum dot materials.
The organic nanowires are uniformly doped in the luminescent layer 140 of the QLED device 10, which can improve the hole transport capability and reduce the electron current, thereby balancing the injection and transport of carriers and improving the device performance.
Further, the organic nanowire is a hole transport type organic nanowire.
In one embodiment, the concentration of the organic nanowires is 1wt% to 7 wt%. Therefore, on one hand, the organic nanowires can be uniformly distributed in the organic light-emitting layer 140 through self-assembly growth, and on the other hand, the organic nanowires distributed in the light-emitting layer 140 can be ensured to be appropriate in size and not to be exposed on the surface of the light-emitting layer film, so that the phenomenon that non-luminous black spots are formed around the organic nanowires to influence the performance of the device is avoided.
In one embodiment, the organic nanowires are nanowires formed from benzothiophene derivatives.
Further, the benzothiophene derivative is at least one selected from the group consisting of compounds having the structures represented by the following formulae (1) to (5):
Figure BDA0001753823600000061
wherein R is1And R2is-n-C12H25，R3、R4And R5Each independently selected from-n-C5H11A group and-n-C12H25One of the groups.
It is understood that the pi-pi interaction is the most important intermolecular non-covalent bonding force for self-assembly between organic molecules, mainly occurs between aromatic rings, and has an energy of about 0 to 50 Kj/mol. The molecule of the compound contains a plurality of S atoms, a one-dimensional nano structure is easily formed through pi-pi interaction, and the compound is self-assembled into a nano wire and has high hole transmission capability; and simultaneously, the electron current can be effectively reduced.
In one embodiment, the thickness of the light emitting layer 140 is 20nm to 40nm, and the particle size of the organic nanowire is less than 10 nm.
In one embodiment, the difference between the LUMO energy level of the organic nanowire in the light-emitting layer 140 and the LUMO energy level of the electron transport layer is greater than or equal to 1.5 eV.
An embodiment of the present invention provides a method for manufacturing a QLED device, including the steps of:
preparing an anode 120, a hole injection layer 130, a light emitting layer 140, an electron transport layer 150, and a cathode 160 sequentially stacked on a substrate 110;
the preparation of the light-emitting layer 140 includes: depositing the luminescent layer solution on the hole injection layer 130, and drying to form a film to obtain a luminescent layer 140;
the luminescent layer solution comprises quantum dot materials and organic materials, the organic materials are self-assembled to form organic nanowires in the process of drying the luminescent layer solution into a film, and the organic nanowires are uniformly distributed in the quantum dot materials after the organic nanowires are dried into the film.
Specifically, the deposition method of the present invention may be, but not limited to, one or more of spin coating, knife coating, printing, spray coating, and bar coating.
In one embodiment, the step of preparing the solution of the light emitting layer includes:
dissolving an organic material in an organic solvent to obtain a mixed solution, wherein the organic material is selected from benzothiophene derivatives;
dissolving a quantum dot material in an organic solvent to obtain quantum dot ink;
and blending the mixed solution with quantum dot ink to obtain a luminescent layer solution.
In one embodiment, the quantum dot material may be selected from, but is not limited to, semiconductor quantum dots of groups II-VI of Cd, such as CdSe/ZnS and CdSe/CdS/ZnS. It can be understood that the quantum dot material is easily dissolved in solvents such as toluene, xylene, chlorobenzene, chloroform and the like.
In one embodiment, the benzothiophene derivative is selected from at least one of the compounds of the aforementioned formulae (1) to (5). It will be appreciated that the compounds of formulae (1) to (5) are readily soluble in hot organic solvents such as toluene, xylene, chlorobenzene, chloroform, tetrahydrofuran, etc. and readily self-assemble to form nanowires by pi-pi interactions.
In one embodiment, the doping concentration of the benzothiophene derivative in the light emitting layer solution is 1wt% to 7 wt%. It can be understood that in the luminescent layer solution, the mass of the benzothiophene derivative accounts for 1% -7% of the total mass of the benzothiophene derivative and the quantum dot material. Therefore, the doping concentration of the benzothiophene derivative is maintained at 1wt% -7 wt%, on one hand, the benzothiophene derivative can form nanowires through self-assembly growth and be uniformly distributed in the quantum dot material, and on the other hand, the organic nanowires distributed in the quantum dot material can be ensured to be appropriate in size and not to be exposed on the surface of the light-emitting layer 140 film, so that non-luminous black spots are prevented from being formed around the organic nanowires and affecting the performance of the device.
The inventors found in experiments that when the doping ratio of the benzothiophene derivative is less than 1wt%, the organic nanowire is hardly formed by self-assembly between molecules; when the doping proportion is higher than 7wt%, the organic nanowires formed by self-assembly of the benzothiophene derivatives have larger particle size and are easily exposed on the surface of the luminescent layer film, and non-luminescent black spots are formed around the organic nanowires exposed on the surface of the film when the device works, so that the performance of the device is influenced.
In one embodiment, the temperature of the light-emitting layer solution is 40 ℃ ± 2 ℃ when the light-emitting layer solution is deposited. Therefore, the organic nanowires generated by self-assembly of benzothiophene derivative molecules can be ensured to be uniformly distributed in the quantum dot material.
Specifically, taking a spin coating method as an example, the steps for preparing the light emitting layer are as follows:
dissolving a quantum dot material in an organic solvent to prepare quantum dot ink with the concentration of 15 mg/mL-25 mg/mL;
dissolving a benzothiophene derivative in an organic solvent at 40 +/-2 ℃ to obtain a benzothiophene derivative solution with the concentration of 10-20 mg/mL;
uniformly mixing a certain amount of benzothiophene derivative solution and quantum dot ink according to the doping concentration of 1-7 wt% to obtain a luminescent layer solution;
then spin-coating the luminescent layer solution on the hole injection layer 130, and then heating and drying to form a film, namely the luminescent layer 140; the temperature of the luminescent layer solution is required to be kept at about 40 ℃ in the spin coating process.
Therefore, in the spin coating process, along with the reduction of the volatilization of the organic solvent and the cooling of the solution, the molecules of the benzothiophene derivative are stacked face to face under the pi-pi interaction force, so that the benzothiophene derivative can be self-assembled into the nano wire and uniformly distributed in the light emitting layer.
The following are specific examples
Example 1:
(1) cleaning a substrate: the method comprises the following steps of ultrasonically cleaning a glass substrate with 150nm ITO (indium tin oxide) by using deionized water, acetone, a washing solution, deionized water and isopropanol for 10-15 minutes each step. And after cleaning, drying in a vacuum oven for later use.
(2) Substrate Plasma treatment: and (4) carrying out oxygen Plasma treatment on the dried ITO for 4 min.
(3) Preparing a hole injection layer: within half an hour after the Plasma treatment, a layer of PEDOT: PSS (poly (3, 4-ethylenedioxythiophene) -polystyrenesulfonic acid) with a thickness of about 40nm was spin-coated on the ITO surface, and then heat-treated in air at 120 ℃ for 20 min.
(4) Preparing a luminescent layer:
toluene is used as an organic solvent, quantum dot ink with the concentration of 15mg/mL and a compound solution of a formula (1) are prepared respectively, and then the quantum dot ink and the compound solution of the formula (1) are blended according to the doping concentration of 2 wt%, so that a light-emitting layer solution of CdSe/ZnS and the compound of the formula (1) is obtained;
a25 nm thick layer of a compound of formula (1) is spin-coated on top of the hole transport layer (the layer of CdSe/ZnS: the compound of formula (1) means that the material of the light-emitting layer consists of CdSe/ZnS and the compound of formula (1)), and the layer is coated at 80 deg.C under N2Heating for 10 min.
(5) Preparing an electron transport layer: on the luminescent layerSpin coating to form a ZnO film with a thickness of about 30nm, and performing N treatment at 100 deg.C2Heating for 10 min.
(6) Preparing an electrode: finally, a layer of Al with the thickness of 120nm is evaporated and coated as an electrode, wherein the evaporation rate is controlled to be
Figure BDA0001753823600000101
Vacuum degree of 2X 10-4Pa。
As shown in fig. 2, which is a schematic diagram of an energy level structure of the QLED device in example 1, according to the energy levels of the light emitting layer and the organic nanowire, the difference between the LUMO energy level of the ZnO thin film layer (electron transport layer) and the LUMO energy level of the organic nanowire is 2eV due to the presence of the organic nanowire, and the presence of such a potential barrier can effectively reduce the electron current reaching the quantum dot light emitting layer, thereby balancing the electron and hole currents inside the device, and facilitating the improvement of the device performance.
Example 2:
(1) cleaning a substrate: carrying out ultrasonic cleaning on a glass substrate with 150nm ITO by using deionized water, acetone, a washing solution, deionized water and isopropanol for 10-15 minutes in each step. And after cleaning, drying in a vacuum oven for later use.
(2) Substrate Plasma treatment: and (4) carrying out oxygen Plasma treatment on the dried ITO for 4 min.
(3) Preparing a hole injection layer: within half an hour after the Plasma treatment, a layer of PEDOT, PSS with the thickness of about 40nm is coated on the surface of the ITO in a spinning mode, and then heating treatment is carried out for 20min in air at 120 ℃;
(4) preparing a luminescent layer: respectively preparing 15mg/mL quantum dot ink and a compound solution of a formula (2) by taking toluene as an organic solvent, and then blending the quantum dot ink and the compound solution of the formula (2) according to the doping concentration of 2 wt% to obtain a CdSe/ZnS light-emitting layer solution of the compound of the formula (2);
spin coating a 25nm thick layer of CdSe/ZnS of formula (2) on the hole transport layer at 80 deg.C under N2Heating for 10 min.
(5) Preparing an electron transport layer: spin coating a ZnO film with a thickness of about 30nm on the luminescent layer, and performing N deposition at 100 deg.C2Heating for 10 min.
(6) Preparing an electrode: finally, a layer of Al with the thickness of 120nm is evaporated and used as an electrode, wherein the evaporation rate is controlled to be
Figure BDA0001753823600000112
Vacuum degree of 2X 10-4Pa。
Example 3:
(1) cleaning a substrate: and (3) ultrasonically cleaning the glass substrate with the ITO of 150nm by using deionized water, acetone, a washing solution, deionized water and isopropanol for 10-15 minutes in each step. After cleaning, putting the mixture into a vacuum oven for drying for later use;
(2) substrate Plasma treatment: carrying out oxygen Plasma treatment on the dried ITO for 4 min;
(3) preparing a hole injection layer: within half an hour after the Plasma treatment, a layer of PEDOT, PSS with the thickness of about 40nm is coated on the surface of the ITO in a spinning mode, and then the ITO is heated in the air at 120 ℃ for 20 min;
(4) preparing a luminescent layer: respectively preparing 15mg/mL quantum dot ink and a compound solution of a formula (4) by taking toluene as an organic solvent, and then blending the quantum dot ink and the compound solution of the formula (4) according to the doping concentration of 1.5 wt% to obtain a CdSe/ZnS light-emitting layer solution of the compound of the formula (4);
spin coating a 25nm thick layer of CdSe/ZnS of formula 4 on the hole transport layer at 80 deg.C under N2Heating for 10 min.
(5) Preparing an electron transport layer: spin coating a ZnO film with a thickness of about 30nm on the luminescent layer, and performing N reaction at 100 deg.C2Heating for 10 min.
(6) Preparing an electrode: finally, a layer of Al with the thickness of 120nm is evaporated and coated as an electrode, wherein the evaporation rate is controlled to be
Figure BDA0001753823600000111
Vacuum degree of 2X 10-4Pa。
Example 4:
(1) cleaning a substrate: and (3) ultrasonically cleaning the glass substrate with the ITO of 150nm by using deionized water, acetone, a washing solution, deionized water and isopropanol for 10-15 minutes in each step. After cleaning, putting the mixture into a vacuum oven for drying for later use;
(2) substrate Plasma treatment: carrying out oxygen Plasma treatment on the dried ITO for 4 min;
(3) preparing a hole injection layer: within half an hour after the Plasma treatment, a layer of PEDOT, PSS with the thickness of about 40nm is coated on the surface of the ITO in a spinning mode, and then the ITO is heated in the air at 120 ℃ for 20 min;
(4) preparing a luminescent layer: toluene is used as an organic solvent, quantum dot ink with the concentration of 15mg/mL and a compound solution of a formula (3) are prepared respectively, and then the quantum dot ink and the compound solution of the formula (3) are blended according to the doping concentration of 2 wt%, so that a light-emitting layer solution of CdSe/ZnS and the compound of the formula (3) is obtained;
spin coating a 25nm thick layer of CdSe/ZnS of formula (3) on the hole transport layer at 80 deg.C under N2Heating for 10 min.
(5) Preparing an electron transport layer: spin coating a ZnO film with a thickness of about 30nm on the luminescent layer, and performing N reaction at 100 deg.C2Heating for 10 min.
(6) Preparing an electrode: finally, a layer of Al with the thickness of 120nm is evaporated and coated as an electrode, wherein the evaporation rate is controlled to be
Figure BDA0001753823600000121
Vacuum degree of 2X 10-4Pa。
Example 5:
(1) cleaning a substrate: and (3) ultrasonically cleaning the glass substrate with the ITO of 150nm by using deionized water, acetone, a washing solution, deionized water and isopropanol for 10-15 minutes in each step. After cleaning, putting the mixture into a vacuum oven for drying for later use;
(2) substrate Plasma treatment: carrying out oxygen Plasma treatment on the dried ITO for 4 min;
(3) preparing a hole injection layer: within half an hour after the Plasma treatment, a layer of PEDOT, PSS with the thickness of about 40nm is coated on the surface of the ITO in a spinning mode, and then the ITO is heated in the air at 120 ℃ for 20 min;
(4) preparing a luminescent layer: toluene is used as an organic solvent, quantum dot ink with the concentration of 15mg/mL and a compound solution of a formula (5) are prepared respectively, and then the quantum dot ink and the compound solution of the formula (5) are blended according to the doping concentration of 2.5 wt%, so that a light-emitting layer solution of CdSe/ZnS and the compound of the formula (5) is obtained;
spin coating a 25nm thick layer of CdSe/ZnS of formula (5) on the hole transport layer at 80 deg.C under N2Heating for 10 min.
(5) Preparing an electron transport layer: spin coating a ZnO film with a thickness of about 30nm on the luminescent layer, and performing N reaction at 100 deg.C2Heating for 10 min.
(6) Preparing an electrode: finally, a layer of Al with the thickness of 120nm is evaporated and coated as an electrode, wherein the evaporation rate is controlled to be
Figure BDA0001753823600000131
Degree of vacuum of 2X 10-4Pa。
Comparative example 1
Comparative example 1 is substantially the same as example 1 except that the compound of formula (1) is not present in the solution of the light emitting layer and the light emitting layer of the resulting QLED device is free of doped nanowires.
Comparative example 2
Comparative example 2 is substantially the same as example 1 except that the doping concentration of the nanowire raw material is different, specifically, the doping concentration of the compound of formula (1) in the light emitting layer solution is 0.5 wt%.
Comparative example 3
Comparative example 3 is substantially the same as example 1 except that the doping concentration of the nanowire raw material is different, specifically, the doping concentration of the compound of formula (1) in the light emitting layer solution is 9 wt%.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent should be subject to the appended claims.

Claims (10)

1. A QLED device is characterized by comprising a light-emitting layer, wherein the light-emitting layer comprises a quantum dot material and organic nanowires, and the organic nanowires are distributed in the quantum dot material;
the organic nanowire is a nanowire formed by benzothiophene derivatives;
the concentration of the organic nanowire is 1-7 wt%;
the benzothiophene derivative is at least one selected from the group consisting of compounds having a structure represented by formula (1), formula (2), formula (3), formula (4), and formula (5):
Figure DEST_PATH_IMAGE001
Figure DEST_PATH_IMAGE003
formula (1), formula (2),
Figure DEST_PATH_IMAGE004
Figure DEST_PATH_IMAGE006
Formula (3), formula (4),
Figure DEST_PATH_IMAGE007
Formula (5);
wherein R is1And R2is-n-C12H25，R3、R4And R5Each independently selected from-n-C5H11A group and-n-C12H25One of the groups.
2. A QLED device according to claim 1, wherein the quantum dot material is selected from: semiconductor quantum dots of groups II-VI including Cd.
3. A QLED device according to claim 2, wherein the quantum dot material is selected from CdSe/ZnS or CdSe/CdS/ZnS.
4. The QLED device according to claim 1, wherein the thickness of the light emitting layer is 20nm to 40nm, and the particle size of the organic nanowire is less than 10 nm.
5. A QLED device according to any of claims 1 to 4, comprising a substrate, an anode, a hole injection layer, the light emitting layer, an electron transport layer and a cathode arranged in that order.
6. The QLED device of claim 5, wherein the difference between the LUMO energy level of the organic nanowire and the LUMO energy level of the electron-transporting layer in the light-emitting layer is greater than or equal to 1.5 eV.
7. The method for preparing a QLED device according to any one of claims 1 to 6, comprising the steps of:
forming a light emitting layer;
the step of forming the light emitting layer includes: depositing a luminescent layer solution, and drying to form a film, thereby obtaining the luminescent layer;
the luminescent layer solution comprises a quantum dot material and an organic material, the organic material is self-assembled to form organic nanowires in the process of drying the luminescent layer solution to form a film, and the organic nanowires are distributed in the quantum dot material.
8. The method of manufacturing a QLED device according to claim 7, further comprising a step of preparing the light-emitting layer solution:
dissolving the organic material in an organic solvent to obtain a mixed solution, wherein the organic material is selected from benzothiophene derivatives;
dissolving the quantum dot material in an organic solvent to obtain quantum dot ink;
and blending the mixed solution with the quantum dot ink to obtain the luminescent layer solution.
9. A method for manufacturing a QLED device according to claim 8, wherein the organic solvent is selected from any one of toluene, xylene, chlorobenzene, chloroform, and tetrahydrofuran.
10. The method for manufacturing a QLED device according to any one of claims 7 to 9, wherein the temperature of the light-emitting layer solution is 40 ℃ ± 2 ℃ when the light-emitting layer solution is deposited.
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