CN112635684A - OLED light-emitting structure based on quantum dot electrodeposition - Google Patents
OLED light-emitting structure based on quantum dot electrodeposition Download PDFInfo
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
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Abstract
The invention relates to an OLED light-emitting structure based on quantum dot electrodeposition, which comprises a substrate, a TFT layer, an organic blue light-emitting layer, a quantum dot deposition layer and a glass panel, wherein the substrate, the TFT layer, the organic blue light-emitting layer, the quantum dot deposition layer and the glass panel are sequentially stacked, the organic blue light-emitting layer comprises a light-emitting substrate and at least 2 light-emitting pixel points uniformly arranged on the light-emitting substrate, the light-emitting substrate is connected with the TFT layer, the TFT layer is used for controlling the on-off and brightness adjustment of the light-emitting pixel points, the quantum dot deposition layer comprises a quantum dot deposition substrate and at least 2 pixel units uniformly arranged on the quantum dot deposition substrate, the quantum dot deposition substrate is connected with the organic blue light-. The OLED light-emitting structure provided by the invention can realize pixel-level quantum dot arrangement, and has the advantages of simple preparation process, high product qualification rate, low manufacturing cost and good product reliability.
Description
Technical Field
The invention belongs to the technical field of display, relates to an OLED light-emitting structure, and particularly relates to an OLED light-emitting structure based on quantum dot electrodeposition.
Background
An Organic Light-Emitting Diode (OLED) display, also called an Organic electroluminescent display, is a new flat display device, and has the advantages of simple manufacturing process, low cost, low power consumption, high brightness, wide application range of operating temperature, Light and thin volume, fast response speed, easy realization of color display and large-screen display, easy realization of matching with an integrated circuit driver, easy realization of flexible display, and the like, thereby having a wide application prospect.
The particle size of a Quantum Dot (QD) material is generally between 1-10nm, and because electrons and holes are Quantum confined, a continuous energy band structure is changed into a discrete energy level structure, so that the luminescence spectrum is very narrow (20-30nm), the color purity is high, the display color gamut is wide, and the display color gamut can greatly exceed the color gamut range of NTSC (more than 100%); meanwhile, the light absorption loss of the color filter is small, and low-power-consumption display can be realized. As a new generation of luminescent materials, quantum dots are emerging for their exceptional performance in OLED display applications. The quantum dot material can excite green light and red light of partial wave bands by absorbing the blue light of the partial wave bands, can effectively improve the color gamut of the display screen, and meets the requirements of high-quality display application.
The quantum dot color film is a key component of a light-emitting structure for realizing ultrahigh color gamut full-color display, and quantum dots are dispersed in photoresist in the prior art, and then quantum dot light conversion material coating is realized on a specific area of a substrate in the modes of photocuring, etching and the like. However, the technical process of the scheme is complex, the production cost is high, the requirements on the equipment capacity and precision are high, and the pixel-level quantum dot arrangement is difficult to realize.
CN104576961A discloses a quantum dot-based OLED white light device and a manufacturing method thereof, where the white light device is composed of a substrate, a blue light OLED device, a quantum dot layer and a thin film encapsulation layer, blue light emitted by the blue light OLED device excites quantum dots in the quantum dot layer, and light emitted from the quantum dot layer is white light synthesized by light emitted by the blue light OLED and light emitted by the quantum dots. The manufacturing method adopts a spin coating method to form the quantum dot film, and the thickness of the quantum dot film is required to be ensured to be 2-3 layers of single quantum dots, so that the requirements on equipment capacity and precision are high, and the production cost is high.
CN207250571U discloses a quantum dot OLED display, the display goes out the plain noodles through setting up the quantum dot layer at ITO glass, utilize quantum dot photoluminescence's characteristic, the ruddiness that sends organic luminescent layer is converted into the blue light, convert the blue light that sends organic luminescent layer into ruddiness or green glow, realize OLED's commentaries on classics look, blue light OLED's life-span and ruddiness OLED ' efficiency all obtain improving, simultaneously, the light that the quantum dot layer sent, its spectrum is narrower, make various monochromatic OLED's color more saturated, product performance obviously improves, has extremely strong competitive advantage. The quantum dot layer is manufactured by adopting quantum dot printing ink through an ink-jet printing mode, the thickness of the quantum dot layer is required to be ensured to be 30-100nm, and the defect of high requirements on equipment capacity and precision also exists, so that the large-scale production of products is limited.
CN107482126A discloses an OLED display and a method for manufacturing the same, wherein the display includes a TFT substrate, a WOLED layer, a water-oxygen barrier layer, a color filter layer, a light extraction layer, and a package cover plate, which are sequentially arranged from bottom to top, wherein the color filter layer includes a plurality of transparent isolation pillars, a plurality of red quantum dot units, a plurality of green quantum dot units, and a plurality of blue quantum dot units; according to the manufacturing method, the transparent isolation columns are arranged in the color filter layer, so that white light emitted by the WOLED layer is transmitted and displayed to form white pixel points, RGBW four-pixel display is achieved, the brightness of the OLED display can be effectively improved, quantum dots are introduced into the color filter layer, the color gamut of the OLED display is greatly improved, and the service life and the light extraction efficiency of the WOLED device are improved by adding the water oxygen barrier layer and the light extraction layer above the WOLED layer. The quantum dot units coat the quantum dot printing ink in the pixel grooves in an ink-jet printing mode, and the three quantum dot units need to be formed step by step in sequence, so that the requirement on equipment precision is high, the process is complex, and the consumed time is long.
CN109988573A discloses a composite quantum dot, a quantum dot solid film and application thereof, wherein the composite quantum dot has electronegativity characteristics, and can be deposited to prepare the quantum dot solid film by an electrodeposition method, so that the luminous intensity and stability of a luminous structure can be effectively improved. However, the quantum dot solid-state film is not a pixel-level color film, thereby limiting further improvement of the imaging quality of the light-emitting structure.
Therefore, how to simplify the production process of the quantum dot color film, reduce the production cost of the quantum dot color film and realize pixel-level quantum dot arrangement simultaneously is seen to be a problem which needs to be solved urgently at present.
Disclosure of Invention
The invention aims to provide an OLED light-emitting structure based on quantum dot electrodeposition, which realizes pixel-level quantum dot arrangement, improves the imaging quality, simplifies the production process of a quantum dot color film and reduces the production cost.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides an OLED light-emitting structure based on quantum dot electrodeposition, which comprises a substrate, a TFT layer, an organic blue light emitting layer, a quantum dot deposition layer and a glass panel which are sequentially stacked.
The organic blue light emitting layer comprises a light emitting substrate and at least 2 light emitting pixel points uniformly arranged on the light emitting substrate.
The light-emitting substrate is connected with the TFT layer.
The TFT layer is used for controlling the on-off and brightness adjustment of the light-emitting pixel points.
The quantum dot deposition layer comprises a quantum dot deposition substrate and at least 2 pixel units uniformly arranged on the quantum dot deposition substrate.
The quantum dot deposition substrate is connected with the organic blue light emitting layer.
The light-emitting pixel provides incident blue light for the pixel unit.
The pixel unit comprises a red quantum dot deposition unit, a green quantum dot deposition unit and a blue light transmission unit.
In the invention, the light-emitting pixel points on the organic blue light emitting layer emit blue light with different intensities under the control of the TFT layer, and can excite the red quantum dot deposition unit and the green quantum dot deposition unit. The excited red quantum dot deposition unit can emit red light with the peak wavelength of 600-660nm, the excited green quantum dot deposition unit can emit green light with the peak wavelength of 510-550nm, and the blue light transmission unit can transmit the blue light emitted by the light-emitting pixel point to realize the composite color display of the red light, the green light and the blue light.
The glass panel plays a role in isolating water and oxygen, and prevents water vapor and oxygen in the environment from corroding the quantum dot material in the quantum dot deposition layer, so that the service life of the OLED light-emitting structure is prolonged.
Preferably, the area of the red quantum dot deposition unit is 1-1000 μm2For example, it may be 1 μm2、100μm2、200μm2、300μm2、400μm2、500μm2、600μm2、700μm2、800μm2、900μm2Or 1000 μm2However, the numerical values recited are not intended to be limiting, and other numerical values not recited within the numerical range may be equally applicable.
Preferably, the area of the green quantum dot deposition unit is 1-1000 μm2For example, it may be 1 μm2、100μm2、200μm2、300μm2、400μm2、500μm2、600μm2、700μm2、800μm2、900μm2Or 1000 μm2However, the numerical values recited are not intended to be limiting, and other numerical values not recited within the numerical range may be equally applicable.
Preferably, the area of the blue light transmission unit is 1-1000 μm2For example, it may be 1 μm2、100μm2、200μm2、300μm2、400μm2、500μm2、600μm2、700μm2、800μm2、900μm2Or 1000 μm2However, the numerical values recited are not intended to be limiting, and other numerical values not recited within the numerical range may be equally applicable.
Preferably, the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit have the same area.
The red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit are all in pixel-level sizes, and display resolution is high. And three pixel units are separately and independently arranged, and red light, green light and blue light are respectively and independently emitted, so that the light filter can be eliminated, the light passing rate and the light effect are improved, and the overall power consumption of the light-emitting structure is reduced.
Preferably, the red quantum dot deposition unit comprises a first transparent conductive material and a red quantum dot material which are arranged in a stacked manner; the first transparent conductive material is connected with the quantum dot deposition substrate.
Preferably, the green quantum dot deposition unit comprises a second transparent conductive material and a green quantum dot material which are arranged in a stacked manner; the second transparent conductive material is connected with the quantum dot deposition substrate.
Preferably, the red light quantum dot material and the green light quantum dot material are both AXMYEZAnd (3) system materials.
The element A is any one or a combination of at least two of Ba, Ag, Na, Fe, In, Cd, Zn, Ga, Mg, Pb or Cs, and typical but non-limiting combinations include Ba and Ag, Na and Fe, In and Cd, Zn and Ga, Mg and Pb, Cs, Ba and Ag, Na, Fe and In, Cd, Zn and Ga, Mg, Pb and Cs, Ba, Ag, Na and Fe, In, Cd, Zn and Ga, or Mg, Pb, Cs and Ba.
The M element is any one or a combination of at least two of S, Cl, O, As, N, P, Se, Te, Ti, Zr or Pb, and typical but non-limiting combinations include S in combination with Cl, O in combination with As, N in combination with P, Se in combination with Te, Ti in combination with Zr, Pb, S in combination with Cl, O, As in combination with N, P, Se in combination with Te, Ti, Zr in combination with Pb, S, Cl, O in combination with As, N, P, Se in combination with Te, or Ti, Zr, Pb and S.
The element E is any one or combination of at least two of S, As, Se, O, Cl, Br or I, and typical but non-limiting combinations include combinations of S and As, combinations of Se and O, combinations of Cl and Br, combinations of I and S, combinations of As, Se and O, combinations of Cl, Br and I, combinations of S, As, Se and O, combinations of O, Cl, Br and I, or combinations of As, Se, O, Cl and Br.
X is 0.3 to 2.0, and may be, for example, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9 or 2.0, but is not limited to the values listed, and other values not listed within the numerical range are also applicable.
Y is 0.5 to 3.0, and may be, for example, 0.5, 0.7, 0.9, 1.0, 1.1, 1.3, 1.5, 1.7, 1.9, 2.0, 2.1, 2.3, 2.5, 2.7, 2.9 or 3.0, but is not limited to the values listed, and other values not listed in the numerical range are also applicable.
Z is 0 to 4.0, and may be, for example, 0, 0.25, 0.5, 0.75, 1.0, 1.25, 1.5, 1.75, 2.0, 2.25, 2.5, 2.75, 3.0, 3.25, 3.5, 3.75 or 4.0, but is not limited to the values recited, and other values not recited within the numerical range are also applicable.
In the present invention, the particle size of the red light quantum dot material is 7 to 12nm, and may be, for example, 7nm, 7.5nm, 8nm, 8.5nm, 9nm, 9.5nm, 10nm, 10.5nm, 11nm, 11.5nm or 12nm, but is not limited to the above-mentioned values, and other values not shown in the above-mentioned value range are also applicable.
In the present invention, the particle size of the green quantum dot material is 3 to 7nm, and may be, for example, 3nm, 3.5nm, 4nm, 4.5nm, 5nm, 5.5nm, 6nm, 6.5nm or 7nm, but is not limited to the above-mentioned values, and other values not listed in the above-mentioned range are also applicable.
In the invention, the particle size of the red light quantum dot material and the green light quantum dot material determines the emission spectrum of each under the excitation of blue light, namely the color of the emitted light after the quantum dots are excited is determined by the size of the quantum dots under the condition that the quantum dot material is determined.
Preferably, the first transparent conductive material comprises any one of or a combination of at least two of an ITO thin film, a transparent conductive glass, or zinc oxide, and typical but non-limiting combinations include a combination of an ITO thin film and a transparent conductive glass, a combination of a transparent conductive glass and zinc oxide, a combination of an ITO thin film and zinc oxide, or a combination of an ITO thin film, a transparent conductive glass, or zinc oxide.
Preferably, the second transparent conductive material comprises any one of or a combination of at least two of an ITO thin film, a transparent conductive glass, or zinc oxide, and typical but non-limiting combinations include a combination of an ITO thin film and a transparent conductive glass, a combination of a transparent conductive glass and zinc oxide, a combination of an ITO thin film and zinc oxide, or a combination of an ITO thin film, a transparent conductive glass, or zinc oxide.
Preferably, the quantum dot deposition layer is prepared by a method comprising the following steps:
(1) preparing a red light quantum dot electrodeposition solution and a green light quantum dot electrodeposition solution respectively, wherein the red light quantum dot electrodeposition solution and the green light quantum dot electrodeposition solution have opposite electrical properties;
(2) mixing the red light quantum dot electrodeposition solution and the green light quantum dot electrodeposition solution prepared in the step (1), and immersing the quantum dot deposition substrate into the mixed quantum dot electrodeposition solution;
(3) and applying opposite electrodes to a red quantum dot deposition unit and a green quantum dot deposition unit of the quantum dot deposition substrate respectively, and finishing the electrodeposition reaction of the red light quantum dots and the green light quantum dots in one step under the action of an external direct current electric field.
The electrical property of the red light quantum dot electrodeposition solution and the green light quantum dot electrodeposition solution in the step (1) is determined by quantum dot surface modification treatment in the respective quantum dot electrodeposition solutions, the modification treatment is to bond organic salt substances containing ionic bonds on the surfaces of the quantum dots, the organic salt substances are easy to get and lose electrons after being dissolved to form charged ions, for example, the organic salt substances can be any one or combination of at least two of fatty acid salt, sulfuric acid ester salt, phosphoric acid ester salt, fatty amine salt, ethanolamine salt or polyethylene polyammonium salt, typical but non-limiting combinations include the combination of fatty acid salt and sulfuric acid ester salt, the combination of sulfuric acid ester salt and phosphoric acid ester salt, the combination of phosphoric acid ester salt and fatty amine salt, the combination of fatty amine salt and ethanolamine salt, the combination of ethanolamine salt and polyethylene polyammonium salt, the combination of fatty acid salt, sulfuric acid ester salt and phosphoric acid ester salt, the combination of sulfuric acid ester salt and sulfuric acid ester salt, the combination of sulfuric acid ester, A combination of a phosphate salt and a fatty amine salt, a combination of a phosphate salt, a fatty amine salt and an ethanolamine salt, or a combination of a fatty amine salt, an ethanolamine salt and a polyvinyl ammonium salt.
Preferably, the red light quantum dot material concentration in the red light quantum dot electrodeposition solution in the step (1) is as follows: 0.05 to 0.5mol/L, for example, 0.05mol/L, 0.1mol/L, 0.15mol/L, 0.2mol/L, 0.25mol/L, 0.3mol/L, 0.35mol/L, 0.4mol/L, 0.45mol/L or 0.5mol/L, but not limited to the values listed, and other values not listed in the numerical range are also applicable.
Preferably, the concentration of the red light quantum dot material in the green light quantum dot electrodeposition solution in the step (1) is as follows: 0.1 to 0.8mol/L, for example, may be 0.1mol/L, 0.2mol/L, 0.3mol/L, 0.4mol/L, 0.5mol/L, 0.6mol/L, 0.7mol/L or 0.8mol/L, but is not limited to the values listed, and other values not listed in the numerical range are also applicable.
Preferably, the mixing manner in the step (2) is stirring.
Preferably, the stirring frequency is 200-1800rpm, such as 200rpm, 400rpm, 600rpm, 800rpm, 1000rpm, 1200rpm, 1400rpm, 1600rpm or 1800rpm, but not limited to the recited values, and other non-recited values within the range are equally applicable.
Preferably, the stirring time is 0.5-30min, for example, 0.5min, 1min, 2min, 4min, 6min, 8min, 10min, 12min, 14min, 16min, 18min, 20min, 22min, 24min, 26min, 28min or 30min, but is not limited to the recited values, and other values not recited in the range of values are also applicable.
The red light quantum dot electrodeposition solution and the green light quantum dot electrodeposition solution can be promoted to be fully mixed by stirring, so that the electrodeposition reaction in the step (3) is facilitated, the thicknesses of a red quantum dot deposition unit and a green quantum dot deposition unit on the quantum dot deposition substrate are more uniform, and the coating effect is improved.
Preferably, the quantum dot deposition substrate of step (2) is subjected to a cleaning treatment before being immersed in the quantum dot electrodeposition solution.
Preferably, the cleaning process comprises washing and/or destaticising.
Preferably, the cleaning solution for cleaning comprises distilled water and/or absolute ethyl alcohol.
Preferably, the means of static electricity removal comprises corona discharge and/or X-ray irradiation.
The cleaning operation can remove dust, water vapor and static electricity on the quantum dot deposition substrate, avoid the existence of impurities to influence the purity of the quantum dot deposition layer, and further ensure that the light passing rate and the light effect are kept at a higher level.
Preferably, the voltage of the dc electric field in step (3) is 1-12V, such as 1V, 2V, 3V, 4V, 5V, 6V, 7V, 8V, 9V, 10V, 11V or 12V, but is not limited to the recited values, and other values not recited in the range of values are also applicable.
Preferably, the current of the dc electric field in step (3) is 1-45A, such as 1A, 5A, 10A, 15A, 20A, 25A, 30A, 35A, 40A or 45A, but is not limited to the recited values, and other values not recited in the range of values are also applicable.
Preferably, the electrodeposition reaction time in step (3) is 1-35min, such as 1min, 5min, 10min, 15min, 20min, 25min, 30min or 35min, but is not limited to the recited values, and other values not recited in the range of values are also applicable.
The electro-deposition reaction in the step (3) can realize pixel-level coating of the quantum dot material, improve the display resolution, and has simple process and low manufacturing cost, thereby realizing batch production.
Compared with the prior art, the invention has the following beneficial effects:
(1) according to the OLED light-emitting structure based on quantum dot electrodeposition, red light and green light are emitted respectively and independently by the red quantum dot deposition unit and the green quantum dot deposition unit in the quantum dot deposition layer excited by the organic blue light emitting layer, and blue light transmitted by the blue light transmission unit is compounded, so that color display is realized;
(2) the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit in the quantum dot deposition layer are all in pixel-level size, the display resolution is high, the three pixel units are separately and independently arranged, and the red light, the green light and the blue light are respectively and independently emitted, so that the optical filter can be eliminated, the light passing rate and the light effect are improved, and the overall power consumption of the light-emitting structure is reduced;
(3) the invention adopts the electrodeposition reaction to prepare the quantum dot deposition layer, realizes the pixel-level coating of the quantum dot luminescent material, has simple process and low manufacturing cost, and can realize batch production.
Drawings
Fig. 1 is a schematic structural diagram of an OLED light emitting structure based on quantum dot electrodeposition provided in example 1;
fig. 2 is a schematic structural diagram of an organic blue light emitting layer and a quantum dot deposition layer in an OLED light emitting structure based on quantum dot electrodeposition provided in embodiment 1;
fig. 3 is a color gamut range diagram of an OLED light emitting structure based on quantum dot electrodeposition provided in example 1;
fig. 4 is a display spectrum of the light emitting structure of the OLED based on quantum dot electrodeposition provided in example 1.
Wherein: 10, a substrate; 20, a TFT layer; 30, an organic blue light emitting layer; 40, quantum dot deposition layer; 50, a glass panel; 300, a light emitting substrate; 301, emitting a pixel; 400, quantum dot deposition substrate; 401, a red quantum dot deposition unit; 402, a green quantum dot deposition unit; 403, blue light transmissive unit.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
Example 1
The present embodiment provides an OLED light emitting structure based on quantum dot electrodeposition as shown in fig. 1, which includes a substrate 10, a TFT layer 20, an organic blue light emitting layer 30, a quantum dot deposition layer 40, and a glass panel 50, which are sequentially stacked.
As shown in fig. 2, the organic blue light emitting layer 30 includes a light emitting substrate 300 and light emitting pixels 301 uniformly disposed on the light emitting substrate 300, wherein the light emitting substrate 300 is connected to the TFT layer 20; the TFT layer 20 is used to control the on/off and brightness adjustment of the light emitting pixel 301; the quantum dot deposition layer 40 comprises a quantum dot deposition substrate 400 connected with the organic blue light emitting layer 30, and a red quantum dot deposition unit 401, a green quantum dot deposition unit 402 and a blue light transmission unit 403 which are uniformly arranged on the quantum dot deposition substrate 400, wherein the areas of the red quantum dot deposition unit 401, the green quantum dot deposition unit 402 and the blue light transmission unit 403 are all 500 μm2。
The red quantum dot deposition unit 401 comprises an ITO thin film and a red light quantum dot material CdSe with the grain diameter of 9.5nm which are stacked, and the ITO thin film is connected with the quantum dot deposition substrate 400; the green quantum dot deposition unit 402 includes an ITO thin film and a green quantum dot material CdSe having a particle size of 5nm, which are stacked, and the ITO thin film is connected to the quantum dot deposition substrate 400.
The quantum dot deposition layer 40 is prepared by the following method, which comprises the following steps:
(1) mixing the sodium oleate solution with the red light quantum dot solution to prepare a negatively charged red light quantum dot electrodeposition solution; mixing the dodecyl trimethyl ammonium chloride solution with the green light quantum dot solution to prepare a positively charged green light quantum dot solution; the CdSe concentration of the red light quantum dot material in the red light quantum dot electro-deposition solution is 0.28mol/L, and the CdSe concentration of the green light quantum dot material in the green light quantum dot electro-deposition solution is 0.45 mol/L;
(2) stirring the red light quantum dot electrodeposition solution and the green light quantum dot electrodeposition solution prepared in the step (1) at the frequency of 1000rpm, stirring for 15min, and immersing the quantum dot deposition substrate 400 subjected to cleaning treatment in the mixed quantum dot electrodeposition solution; the cleaning treatment comprises distilled water cleaning and corona discharge static electricity removal;
(3) and (3) switching on the anode of a power supply to the red quantum dot deposition unit 401, switching on the cathode of the power supply to the green quantum dot deposition unit 402, and continuing for 18min under the action of an external direct current electric field with the voltage of 6V and the current of 23A to finish the electrodeposition reaction of the red light and the green light quantum dots in one step.
The color gamut of the quantum dot electrodeposition based OLED light emitting structure provided in this example is about 120% NTSC, which is substantially greater than the 72% NTSC color gamut of the conventional display (see fig. 3); in addition, the light-emitting structure provided by the embodiment emits narrow red, green and blue light spectrums, does not overlap with each other, has high color purity, and is obviously superior to the conventional OLED light-emitting structure (see FIG. 4).
The OLED light emitting structure based on quantum dot electrodeposition according to this embodiment excites the red quantum dot deposition unit 401 and the green quantum dot deposition unit 402 in the quantum dot deposition layer 40 to emit red light and green light respectively and independently through the organic blue light emitting layer 30, and combines the blue light transmitted by the blue light transmission unit 403, thereby realizing ultrahigh color gamut display; the red quantum dot deposition unit 401, the green quantum dot deposition unit 402 and the blue light transmission unit 403 in the quantum dot deposition layer 40 are all in pixel-level size, the display resolution is high, the three pixel units are separately and independently arranged, and red light, green light and blue light are respectively and independently emitted, so that an optical filter can be eliminated, the light passing rate and the light effect are improved, and the overall power consumption of the light-emitting structure is reduced; and the quantum dot deposition layer 40 is prepared by adopting electrodeposition reaction, so that pixel-level coating of the quantum dot luminescent material is realized, the process is simple, the manufacturing cost is low, and batch production can be realized.
Example 2
The embodiment provides an OLED light-emitting structure based on quantum dot electrodeposition, the OLED light-emitting structure comprises a substrate, a TFT layer, an organic blue light emitting layer, a quantum dot deposition layer and a glass panel which are sequentially stacked.
The organic blue light emitting layer comprises a light emitting substrate and light emitting pixel points uniformly arranged on the light emitting substrate, and the light emitting substrate is connected with the TFT layer; the TFT layer is used for controlling the opening and closing of the light-emitting pixel points and the brightness adjustment; the quantum dot deposition layer comprises a quantum dot deposition substrate connected with the organic blue light emitting layer, and a red quantum dot deposition unit, a green quantum dot deposition unit and a blue light transmission unit which are uniformly arranged on the quantum dot deposition substrate, and the areas of the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit are all 250 mu m2。
The red quantum dot deposition unit comprises an ITO thin film and a red light quantum dot material CsPbBr with the grain diameter of 10.75nm which are arranged in a laminated mode3The ITO film is connected with the quantum dot deposition substrate; the green quantum dot deposition unit comprises an ITO thin film and a green quantum dot material CsPbBr with the particle size of 6nm which are arranged in a stacked mode3And the ITO film is connected with the quantum dot deposition substrate.
The quantum dot deposition layer 40 is prepared by the following method, which comprises the following steps:
(1) mixing the sodium dodecyl sulfate solution and the red light quantum dot solution to prepare a negatively charged red light quantum dot electrodeposition solution; mixing the ethanolamine hydrochloride solution with the green light quantum dot solution to prepare a positively charged green light quantum dot solution; wherein the red light quantum dot material CsPbBr in the red light quantum dot electrodeposition solution3The concentration is 0.39mol/L, and the green light quantum dot material CsPbBr in the green light quantum dot electrodeposition solution3The concentration is 0.63 mol/L;
(2) stirring the red light quantum dot electrodeposition solution and the green light quantum dot electrodeposition solution prepared in the step (1) at the frequency of 1400rpm, stirring for 23min, and immersing the quantum dot deposition substrate subjected to cleaning treatment in the mixed quantum dot electrodeposition solution; the cleaning treatment comprises distilled water cleaning and corona discharge static electricity removal;
(3) and (3) switching on the red quantum dot deposition unit to the anode of a power supply, switching on the green quantum dot deposition unit to the cathode of the power supply, and continuing for 27min under the action of an external direct current electric field with the voltage of 9V and the current of 34A to finish the electrodeposition reaction of the red light and the green light quantum dots in one step.
The color gamut and the display spectrum of the OLED light-emitting structure based on quantum dot electrodeposition provided in this embodiment are substantially the same as those of embodiment 1, and therefore, the description thereof is omitted here.
The quantum dot electrodeposition-based OLED light-emitting structure provided in this embodiment excites the red quantum dot deposition unit and the green quantum dot deposition unit in the quantum dot deposition layer to emit red light and green light respectively and independently through the organic blue light-emitting layer, and combines the blue light transmitted by the blue light transmission unit, thereby realizing ultrahigh color gamut display; the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit in the quantum dot deposition layer are all in pixel-level sizes, the display resolution is high, the three pixel units are separately and independently arranged, and red light, green light and blue light are respectively and independently emitted, so that the light filter can be eliminated, the light passing rate and the light effect are improved, and the overall power consumption of the light-emitting structure is reduced; and the quantum dot deposition layer is prepared by adopting electrodeposition reaction, so that pixel-level coating of the quantum dot luminescent material is realized, the process is simple, the manufacturing cost is low, and batch production can be realized.
Example 3
The embodiment provides an OLED light-emitting structure based on quantum dot electrodeposition, the OLED light-emitting structure comprises a substrate, a TFT layer, an organic blue light emitting layer, a quantum dot deposition layer and a glass panel which are sequentially stacked.
The organic blue light emitting layer comprises a light emitting substrate and light emitting pixel points uniformly arranged on the light emitting substrateThe optical substrate is connected with the TFT layer; the TFT layer is used for controlling the opening and closing of the light-emitting pixel points and the brightness adjustment; the quantum dot deposition layer comprises a quantum dot deposition substrate connected with the organic blue light emitting layer, and a red quantum dot deposition unit, a green quantum dot deposition unit and a blue light transmission unit which are uniformly arranged on the quantum dot deposition substrate, and the areas of the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit are all 750 mu m2。
The red quantum dot deposition unit comprises an ITO thin film and a red light quantum dot material CuInS with the grain diameter of 8.25nm which are arranged in a stacked mode2The ITO film is connected with the quantum dot deposition substrate; the green quantum dot deposition unit comprises an ITO thin film and a green quantum dot material CuInS with the grain diameter of 4nm which are arranged in a stacked mode2And the ITO film is connected with the quantum dot deposition substrate.
The quantum dot deposition layer 40 is prepared by the following method, which comprises the following steps:
(1) mixing the sodium dodecyl phosphate solution and the red light quantum dot solution to prepare a negatively charged red light quantum dot electrodeposition solution; mixing a cetyl pyridine bromide solution and a green light quantum dot solution to prepare a positively charged green light quantum dot solution; wherein the red light quantum dot material CuInS in the red light quantum dot electrodeposition solution2The concentration is 0.17mol/L, and the green light quantum dot material CuInS in the green light quantum dot electrodeposition solution2The concentration is 0.28 mol/L;
(2) stirring the red light quantum dot electrodeposition solution and the green light quantum dot electrodeposition solution prepared in the step (1) at the frequency of 600rpm, stirring for 8min, and immersing the quantum dot deposition substrate subjected to cleaning treatment into the mixed quantum dot electrodeposition solution; the cleaning treatment comprises distilled water cleaning and corona discharge static electricity removal;
(3) and (3) switching on the red quantum dot deposition unit to the anode of a power supply, switching on the green quantum dot deposition unit to the cathode of the power supply, and continuing for 9min under the action of an external direct current electric field with the voltage of 3V and the current of 12A to finish the electrodeposition reaction of the red light and the green light quantum dots in one step.
The color gamut and the display spectrum of the OLED light-emitting structure based on quantum dot electrodeposition provided in this embodiment are substantially the same as those of embodiment 1, and therefore, the description thereof is omitted here.
The quantum dot electrodeposition-based OLED light-emitting structure provided in this embodiment excites the red quantum dot deposition unit and the green quantum dot deposition unit in the quantum dot deposition layer to emit red light and green light respectively and independently through the organic blue light-emitting layer, and combines the blue light transmitted by the blue light transmission unit, thereby realizing ultrahigh color gamut display; the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit in the quantum dot deposition layer are all in pixel-level sizes, the display resolution is high, the three pixel units are separately and independently arranged, and red light, green light and blue light are respectively and independently emitted, so that the light filter can be eliminated, the light passing rate and the light effect are improved, and the overall power consumption of the light-emitting structure is reduced; and the quantum dot deposition layer is prepared by adopting electrodeposition reaction, so that pixel-level coating of the quantum dot luminescent material is realized, the process is simple, the manufacturing cost is low, and batch production can be realized.
Example 4
The embodiment provides an OLED light-emitting structure based on quantum dot electrodeposition, the OLED light-emitting structure comprises a substrate, a TFT layer, an organic blue light emitting layer, a quantum dot deposition layer and a glass panel which are sequentially stacked.
The organic blue light emitting layer comprises a light emitting substrate and light emitting pixel points uniformly arranged on the light emitting substrate, and the light emitting substrate is connected with the TFT layer; the TFT layer is used for controlling the opening and closing of the light-emitting pixel points and the brightness adjustment; the quantum dot deposition layer comprises a quantum dot deposition substrate connected with the organic blue light emitting layer, and a red quantum dot deposition unit, a green quantum dot deposition unit and a blue light transmission unit which are uniformly arranged on the quantum dot deposition substrate, and the areas of the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit are all 1 mu m2。
The red quantum dot deposition unit comprises an ITO thin film and a red light quantum dot material AgInSe with the particle size of 12nm which are arranged in a stacked mode2The ITO thin film and the quantum dot deposition baseThe plates are connected; the green quantum dot deposition unit comprises an ITO thin film and a green quantum dot material AgInSe with the grain diameter of 3nm which are arranged in a stacked mode2And the ITO film is connected with the quantum dot deposition substrate.
The quantum dot deposition layer 40 is prepared by the following method, which comprises the following steps:
(1) mixing the dodecyl trimethyl ammonium chloride solution with the red light quantum dot solution to prepare a positively charged red light quantum dot electrodeposition solution; mixing the sodium oleate solution with the green light quantum dot solution to prepare a negatively charged green light quantum dot solution; wherein the red light quantum dot material AgInSe in the red light quantum dot electrodeposition solution2The concentration is 0.5mol/L, and the green light quantum dot material AgInSe in the green light quantum dot electrodeposition solution2The concentration is 0.8 mol/L;
(2) stirring the red light quantum dot electrodeposition solution and the green light quantum dot electrodeposition solution prepared in the step (1) at the frequency of 1800rpm, stirring for 30min, and immersing the quantum dot deposition substrate subjected to cleaning treatment into the mixed quantum dot electrodeposition solution; the cleaning treatment comprises distilled water cleaning and corona discharge static electricity removal;
(3) and (3) switching on the cathode of the power supply for the red quantum dot deposition unit, switching on the anode of the power supply for the green quantum dot deposition unit, and continuing for 35min under the action of an external direct current electric field with the voltage of 12V and the current of 45A to finish the electrodeposition reaction of the red light and the green light quantum dots in one step.
The color gamut and the display spectrum of the OLED light-emitting structure based on quantum dot electrodeposition provided in this embodiment are substantially the same as those of embodiment 1, and therefore, the description thereof is omitted here.
The quantum dot electrodeposition-based OLED light-emitting structure provided in this embodiment excites the red quantum dot deposition unit and the green quantum dot deposition unit in the quantum dot deposition layer to emit red light and green light respectively and independently through the organic blue light-emitting layer, and combines the blue light transmitted by the blue light transmission unit, thereby realizing ultrahigh color gamut display; the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit in the quantum dot deposition layer are all in pixel-level sizes, the display resolution is high, the three pixel units are separately and independently arranged, and red light, green light and blue light are respectively and independently emitted, so that the light filter can be eliminated, the light passing rate and the light effect are improved, and the overall power consumption of the light-emitting structure is reduced; and the quantum dot deposition layer is prepared by adopting electrodeposition reaction, so that pixel-level coating of the quantum dot luminescent material is realized, the process is simple, the manufacturing cost is low, and batch production can be realized.
Example 5
The embodiment provides an OLED light-emitting structure based on quantum dot electrodeposition, the OLED light-emitting structure comprises a substrate, a TFT layer, an organic blue light emitting layer, a quantum dot deposition layer and a glass panel which are sequentially stacked.
The organic blue light emitting layer comprises a light emitting substrate and light emitting pixel points uniformly arranged on the light emitting substrate, and the light emitting substrate is connected with the TFT layer; the TFT layer is used for controlling the opening and closing of the light-emitting pixel points and the brightness adjustment; the quantum dot deposition layer comprises a quantum dot deposition substrate connected with the organic blue light emitting layer, and a red quantum dot deposition unit, a green quantum dot deposition unit and a blue light transmission unit which are uniformly arranged on the quantum dot deposition substrate, and the areas of the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit are all 1000 mu m2。
The red quantum dot deposition unit comprises an ITO thin film and a red light quantum dot material CsPbI with the grain diameter of 7nm which are arranged in a laminated mode3The ITO film is connected with the quantum dot deposition substrate; the green quantum dot deposition unit comprises an ITO thin film and a green quantum dot material CsPbI with the grain diameter of 3nm which are arranged in a stacked mode3And the ITO film is connected with the quantum dot deposition substrate.
The quantum dot deposition layer 40 is prepared by the following method, which comprises the following steps:
(1) mixing the ethanolamine hydrochloride solution with the red light quantum dot solution to prepare a positively charged red light quantum dot electrodeposition solution; mixing the sodium dodecyl sulfate solution and the green light quantum dot solution to prepare a negatively charged green light quantum dot solution; wherein the red light quantum dot material CsPbI in the red light quantum dot electrodeposition solution3The concentration is 0.05mol/L, and the green light quantum dot material CsPbI in the green light quantum dot electrodeposition solution3The concentration is 0.1 mol/L;
(2) stirring the red light quantum dot electrodeposition solution and the green light quantum dot electrodeposition solution prepared in the step (1) at the frequency of 200rpm, stirring for 0.5min, and immersing the quantum dot deposition substrate subjected to cleaning treatment into the mixed quantum dot electrodeposition solution; the cleaning treatment comprises distilled water cleaning and corona discharge static electricity removal;
(3) and (3) switching on the cathode of the power supply for the red quantum dot deposition unit, switching on the anode of the power supply for the green quantum dot deposition unit, and continuing for 1min under the action of an external direct current electric field with the voltage of 1V and the current of 1A to finish the electrodeposition reaction of the red light and the green light quantum dots in one step.
The color gamut and the display spectrum of the OLED light-emitting structure based on quantum dot electrodeposition provided in this embodiment are substantially the same as those of embodiment 1, and therefore, the description thereof is omitted here.
The quantum dot electrodeposition-based OLED light-emitting structure provided in this embodiment excites the red quantum dot deposition unit and the green quantum dot deposition unit in the quantum dot deposition layer to emit red light and green light respectively and independently through the organic blue light-emitting layer, and combines the blue light transmitted by the blue light transmission unit, thereby realizing ultrahigh color gamut display; the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit in the quantum dot deposition layer are all in pixel-level sizes, the display resolution is high, the three pixel units are separately and independently arranged, and red light, green light and blue light are respectively and independently emitted, so that the light filter can be eliminated, the light passing rate and the light effect are improved, and the overall power consumption of the light-emitting structure is reduced; and the quantum dot deposition layer is prepared by adopting electrodeposition reaction, so that pixel-level coating of the quantum dot luminescent material is realized, the process is simple, the manufacturing cost is low, and batch production can be realized.
Comparative example 1
The comparison example provides an LCD light-emitting structure, which comprises a substrate, a TFT layer, an LED white light backlight source, a color filter and a glass panel which are sequentially stacked.
The LED white light backlight source comprises a light-emitting substrate and light-emitting pixel points uniformly arranged on the light-emitting substrate, and the light-emitting substrate is connected with the TFT layer; the TFT layer is used for controlling the opening and closing of the light-emitting pixel points and the brightness adjustment; the color filter comprises a red filter, a green filter and a blue filter.
According to the LCD light-emitting structure provided by the comparative example, white light emitted by the LED white light backlight source is converted into red light, green light and blue light respectively and independently through the red filter, the green filter and the blue filter in the color filter, and color display is achieved compositely.
Compared with the embodiments 1 to 5, the comparative example 1 uses the color filter to convert the white light into the red light, the green light and the blue light, the color purity of the converted light is not high, the display color gamut is narrow, the light passing rate and the light efficiency are reduced in the process, and the overall power consumption of the light-emitting structure is increased.
Comparative example 2
The present comparative example provides a conventional OLED light emitting structure including a substrate, a TFT layer, an organic light emitting layer, and a glass panel, which are sequentially stacked; the organic light emitting layer comprises a blue OLED light source, a green OLED light source and a red OLED light source which are arranged adjacent to each other.
Compared with the embodiments 1 to 5, the conventional OLED light-emitting structure described in the comparative example 2 has a complex preparation process, requires the preparation and coating of 3 organic light-emitting materials to be completed, and has low production efficiency and product yield; in addition, the aging rates of the OLED light sources with 3 colors in the organic light emitting layer in the comparative example 2 are not consistent, the light emitting structure is easy to generate color difference and screen burning phenomena in the long-term use process, and the product reliability is poor, while the examples 1-5 adopt inorganic quantum dots as color conversion materials, and the stability of the inorganic materials is superior to that of the organic materials.
Compared with example 1, the conventional OLED light-emitting structure provided by the comparative example has wider emitted red, green and blue light spectrums, partial overlapping of the emitted red, green and blue light spectrums, and lower color purity (see FIG. 4).
In summary, the quantum dot electrodeposition-based OLED light-emitting structure provided by the present invention excites the red quantum dot deposition unit and the green quantum dot deposition unit in the quantum dot deposition layer to emit red light and green light respectively and independently through the organic blue light-emitting layer, and combines the blue light transmitted by the blue light transmission unit, thereby realizing ultrahigh color gamut display; the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit in the quantum dot deposition layer are all in pixel-level sizes, the display resolution is high, the three pixel units are separately and independently arranged, and red light, green light and blue light are respectively and independently emitted, so that the light filter can be eliminated, the light passing rate and the light effect are improved, and the overall power consumption of the light-emitting structure is reduced; and the quantum dot deposition layer is prepared by adopting electrodeposition reaction, so that pixel-level coating of the quantum dot luminescent material is realized, the process is simple, the manufacturing cost is low, and batch production can be realized.
The applicant declares that the above description is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be understood by those skilled in the art that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are within the scope and disclosure of the present invention.
Claims (10)
1. The OLED light-emitting structure based on quantum dot electrodeposition is characterized by comprising a substrate, a TFT layer, an organic blue light emitting layer, a quantum dot deposition layer and a glass panel which are sequentially stacked;
the organic blue light emitting layer comprises a light emitting substrate and at least 2 light emitting pixel points uniformly arranged on the light emitting substrate;
the light-emitting substrate is connected with the TFT layer;
the TFT layer is used for controlling the opening and closing of the light-emitting pixel points and the brightness adjustment;
the quantum dot deposition layer comprises a quantum dot deposition substrate and at least 2 pixel units uniformly arranged on the quantum dot deposition substrate;
the quantum dot deposition substrate is connected with the organic blue light emitting layer;
the light-emitting pixel point provides incident blue light for the pixel unit;
the pixel unit comprises a red quantum dot deposition unit, a green quantum dot deposition unit and a blue light transmission unit.
2. The OLED light emitting structure based on quantum dot electrodeposition as claimed in claim 1, wherein the area of the red quantum dot deposition unit is 1-1000 μm2；
Preferably, the area of the green quantum dot deposition unit is 1-1000 μm2；
Preferably, the area of the blue light transmission unit is 1-1000 μm2；
Preferably, the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit have the same area.
3. The OLED light emitting structure based on quantum dot electrodeposition as claimed in claim 1 or 2, wherein the red quantum dot deposition unit comprises a first transparent conductive material and a red quantum dot material which are arranged in a stacked manner, and the first transparent conductive material is connected with the quantum dot deposition substrate;
preferably, the green quantum dot deposition unit comprises a second transparent conductive material and a green quantum dot material which are arranged in a stacked manner, and the second transparent conductive material is connected with the quantum dot deposition substrate.
4. The OLED light emitting structure based on quantum dot electrodeposition as claimed in claim 3, wherein the red light quantum dot material and the green light quantum dot material are both AXMYEZA system material;
the element A is any one or the combination of at least two of Ba, Ag, Na, Fe, In, Cd, Zn, Ga, Mg, Pb or Cs;
the M element is any one or the combination of at least two of S, Cl, O, As, N, P, Se, Te, Ti, Zr or Pb;
the element E is any one or the combination of at least two of S, As, Se, O, Cl, Br or I;
x is 0.3-2.0; y is 0.5-3.0 and Z is 0-4.0.
5. The OLED light emitting structure based on quantum dot electrodeposition as claimed in claim 3 or 4, wherein the first transparent conductive material comprises any one or a combination of at least two of ITO thin film, transparent conductive glass or zinc oxide;
preferably, the second transparent conductive material includes any one of an ITO thin film, a transparent conductive glass, or zinc oxide, or a combination of at least two thereof.
6. The OLED light emitting structure based on quantum dot electrodeposition according to any one of claims 1 to 5, wherein the quantum dot deposition layer is a quantum dot deposition layer prepared by a method comprising:
(1) preparing a red light quantum dot electrodeposition solution and a green light quantum dot electrodeposition solution respectively, wherein the red light quantum dot electrodeposition solution and the green light quantum dot electrodeposition solution have opposite electrical properties;
(2) mixing the red light quantum dot electrodeposition solution and the green light quantum dot electrodeposition solution prepared in the step (1), and immersing the quantum dot deposition substrate into the mixed quantum dot electrodeposition solution;
(3) and applying opposite electrodes to a red quantum dot deposition unit and a green quantum dot deposition unit of the quantum dot deposition substrate respectively, and finishing the electrodeposition reaction of the red light quantum dots and the green light quantum dots in one step under the action of an external direct current electric field.
7. The quantum dot electrodeposition-based OLED light-emitting structure according to claim 6, wherein the red light quantum dot material concentration in the red light quantum dot electrodeposition solution of step (1) is: 0.05-0.5 mol/L;
preferably, the concentration of the green light quantum dot material in the green light quantum dot electrodeposition solution in the step (1) is as follows: 0.1-0.8 mol/L.
8. The OLED light emitting structure based on quantum dot electrodeposition as claimed in claim 6 or 7, wherein the mixing manner in step (2) is stirring;
preferably, the frequency of the stirring is 200-;
preferably, the stirring time is 0.5-30 min.
9. The quantum dot electrodeposition-based OLED light-emitting structure according to any one of claims 6 to 8, wherein the quantum dot deposition substrate of step (2) is subjected to a cleaning treatment before being immersed in the quantum dot electrodeposition solution;
preferably, the cleaning treatment comprises washing and/or destaticizing;
preferably, the cleaning solution comprises distilled water and/or absolute ethyl alcohol;
preferably, the means of static electricity removal comprises corona discharge and/or X-ray irradiation.
10. The OLED light emitting structure based on quantum dot electrodeposition as claimed in any one of claims 6 to 9, wherein the voltage of the DC electric field in step (3) is 1-12V, and the current is 1-45A;
preferably, the time of the electrodeposition reaction in the step (3) is 1-35 min.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104536198A (en) * | 2015-02-03 | 2015-04-22 | 京东方科技集团股份有限公司 | Display substrate, display panel and display device |
| CN110120451A (en) * | 2019-04-12 | 2019-08-13 | 云谷（固安）科技有限公司 | A kind of display panel and display device |
| CN111607234A (en) * | 2020-06-15 | 2020-09-01 | Tcl华星光电技术有限公司 | Quantum dot composition and preparation method thereof, quantum dot patterning method and patterned quantum dot solid film |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104536198A (en) * | 2015-02-03 | 2015-04-22 | 京东方科技集团股份有限公司 | Display substrate, display panel and display device |
| CN110120451A (en) * | 2019-04-12 | 2019-08-13 | 云谷（固安）科技有限公司 | A kind of display panel and display device |
| CN111607234A (en) * | 2020-06-15 | 2020-09-01 | Tcl华星光电技术有限公司 | Quantum dot composition and preparation method thereof, quantum dot patterning method and patterned quantum dot solid film |
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Application publication date: 20210409 |