CN112635642A - Display device based on quantum dot electrodeposition and application thereof - Google Patents
Display device based on quantum dot electrodeposition and application thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
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- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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Abstract
The invention relates to a display device based on quantum dot electrodeposition and application thereof, wherein the display device comprises a blue light backlight source and a quantum dot deposition layer which are arranged in a stacking manner, the blue light backlight source comprises a backlight source substrate and at least 2 light-emitting pixel points which are uniformly arranged on the backlight source substrate, the quantum dot deposition layer comprises a quantum dot deposition substrate and at least 2 pixel units which are uniformly arranged on the quantum dot deposition substrate, the quantum dot deposition substrate is connected with the blue light backlight source, the light-emitting pixel points correspond to the pixel units in a one-to-one manner in position, so that the light-emitting pixel points provide exciting blue light for the pixel units, and the pixel units comprise a red quantum dot deposition unit, a green quantum dot deposition unit and a blue light transmission unit; the display apparatus can be used for various display devices; the display device provided by the invention has the advantages of high resolution, wide display color gamut and good application compatibility, and the use of a light filter is eliminated, so that the light passing rate and the light effect are improved, and the overall power consumption is reduced.
Description
Technical Field
The invention belongs to the technical field of display, relates to a quantum dot display device, and particularly relates to a display device based on quantum dot electrodeposition and application thereof.
Background
The particle size of a Quantum Dot (QD) material is generally between 1-10nm, and because electrons and holes are Quantum confined, a continuous energy band structure is changed into a discrete energy level structure, so that the luminescence spectrum is very narrow (20-30nm), the color purity is high, the display color gamut is wide, and the display color gamut can greatly exceed the color gamut range of NTSC (more than 100%); meanwhile, the light absorption loss of the color filter is small, and low-power-consumption display can be realized. As a new generation of luminescent materials, quantum dots are emerging for LED display applications due to their special properties. The quantum dot material can excite green light and red light of partial wave bands by absorbing the blue light of the partial wave bands, can effectively improve the color gamut of the display screen, and meets the requirements of high-quality display application.
The quantum dot color film is a key component for realizing ultrahigh color gamut full-color display of a display device, and quantum dots are dispersed in photoresist in the prior art, and then quantum dot light conversion material coating is realized on a specific area of a substrate in the modes of photocuring, etching and the like. However, the technical process of the scheme is complex, the production cost is high, the requirements on the equipment capacity and precision are high, and the pixel-level quantum dot arrangement is difficult to realize.
CN109988573A discloses a composite quantum dot, a quantum dot solid film and application thereof, wherein the composite quantum dot has electronegativity characteristic, and can be deposited to prepare the quantum dot solid film by an electrodeposition method, so that the luminous intensity and stability of a display device can be effectively improved. However, the quantum dot solid-state film is not a pixel-level color film, thereby limiting further improvement of the imaging quality of the display device.
CN105388660B discloses a preparation method of a COA type array substrate, which can realize zero waste of quantum dots, and compared with the existing preparation method of a color filter, the preparation method does not need to use a high temperature process, effectively improves the utilization rate of quantum dots, and can save two to three times of photolithography processes, thereby reducing the cost and protecting the environment; and the obtained quantum dot color film is connected with the electrode layer through a chemical bond, so that the high connection strength is achieved, and the generation of poor phenomena such as peeling and the like caused by insufficient connection strength of the photoresist and the substrate is avoided. The preparation method adopts three times of electrodeposition to respectively carry out the deposition of the red, green and blue quantum dots, thereby increasing the time cost to a certain extent.
CN104576961A discloses a quantum dot-based OLED white light device and a manufacturing method thereof, where the white light device is composed of a substrate, a blue light OLED device, a quantum dot layer and a thin film encapsulation layer, blue light emitted by the blue light OLED device excites quantum dots in the quantum dot layer, and light emitted from the quantum dot layer is white light synthesized by light emitted by the blue light OLED and light emitted by the quantum dots. The manufacturing method adopts a spin coating method to form the quantum dot film, and the thickness of the quantum dot film is required to be ensured to be 2-3 layers of single quantum dots, so that the requirements on equipment capacity and precision are high, and the production cost is high.
CN207250571U discloses a quantum dot OLED display, the display goes out the plain noodles through setting up the quantum dot layer at ITO glass, utilize quantum dot photoluminescence's characteristic, the ruddiness that sends organic luminescent layer is converted into the blue light, convert the blue light that sends organic luminescent layer into ruddiness or green glow, realize OLED's commentaries on classics look, blue light OLED's life-span and ruddiness OLED ' efficiency all obtain improving, simultaneously, the light that the quantum dot layer sent, its spectrum is narrower, make various monochromatic OLED's color more saturated, product performance obviously improves, has extremely strong competitive advantage. The quantum dot layer is manufactured by adopting quantum dot printing ink through an ink-jet printing mode, the thickness of the quantum dot layer is required to be ensured to be 30-100nm, and the defect of high requirements on equipment capacity and precision also exists, so that the large-scale production of products is limited.
Therefore, how to simplify the production process of the quantum dot color film, reduce the production cost of the quantum dot color film and realize pixel-level quantum dot arrangement simultaneously is seen to improve the imaging quality of the display device, which is a problem to be solved urgently at present.
Disclosure of Invention
The display device realizes pixel-level quantum dot arrangement, improves imaging quality, simplifies the production process of a quantum dot color film, reduces production cost, can be applied to various display devices, and has good application compatibility.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the present invention provides a display device based on quantum dot electrodeposition, including a blue light backlight and a quantum dot deposition layer stacked together.
The blue light backlight source comprises a backlight source substrate and at least 2 light-emitting pixel points which are uniformly arranged on the backlight source substrate.
The quantum dot deposition layer comprises a quantum dot deposition substrate and at least 2 pixel units uniformly arranged on the quantum dot deposition substrate.
The quantum dot deposition substrate is connected with the blue light backlight source.
The light-emitting pixel points correspond to the pixel units one by one, so that the light-emitting pixel points provide blue light for the pixel units.
The pixel unit comprises a red quantum dot deposition unit, a green quantum dot deposition unit and a blue light transmission unit.
And the light-emitting pixel points on the blue light backlight source can emit blue light with different intensities, so that the red quantum dot deposition unit and the green quantum dot deposition unit are excited. The excited red quantum dot deposition unit can emit red light with the peak wavelength of 600-plus-660 nm, the excited green quantum dot deposition unit can emit green light with the peak wavelength of 510-plus-550 nm, and the blue light transmission unit can realize the composite color display of the red light, the green light and the blue light through the blue light emitted by the light-emitting pixel points.
The light-emitting pixel points correspond to the pixel units one by one, and specifically, each pixel unit, such as a red quantum dot deposition unit, a green quantum dot deposition unit and a blue light transmission unit, has a light-emitting pixel point in a corresponding area of the backlight substrate to provide excitation blue light for the pixel unit.
Preferably, the area of the red quantum dot deposition unit is 1-1000 μm2For example, it may be 1 μm2、100μm2、200μm2、300μm2、400μm2、500μm2、600μm2、700μm2、800μm2、900μm2Or 1000 μm2However, the numerical values recited are not intended to be limiting, and other numerical values not recited within the numerical range may be equally applicable.
Preferably, the area of the green quantum dot deposition unit is 1-1000 μm2For example, it may be 1 μm2、100μm2、200μm2、300μm2、400μm2、500μm2、600μm2、700μm2、800μm2、900μm2Or 1000 μm2However, the numerical values recited are not intended to be limiting, and other numerical values not recited within the numerical range may be equally applicable.
Preferably, the area of the blue light transmission unit is 1-1000 μm2For example, it may be 1 μm2、100μm2、200μm2、300μm2、400μm2、500μm2、600μm2、700μm2、800μm2、900μm2Or 1000 μm2However, the numerical values recited are not intended to be limiting, and other numerical values not recited within the numerical range may be equally applicable.
Preferably, the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit have the same area.
The red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit are all in pixel-level sizes, and display resolution is high. And the three pixel units are separately and independently arranged, and red light, green light and blue light are respectively and independently emitted, so that the light filter can be eliminated, the light passing rate and the light effect are improved, and the overall power consumption of the display device is reduced.
Preferably, the thickness of the red quantum dot deposition unit is 0.2-15 μm, and may be, for example, 0.2 μm, 1 μm, 3 μm, 5 μm, 7 μm, 9 μm, 11 μm, 13 μm or 15 μm, but is not limited to the enumerated values, and other non-enumerated values within the numerical range are also applicable.
Preferably, the thickness of the green quantum dot deposition unit is 0.2-15 μm, and may be, for example, 0.2 μm, 1 μm, 3 μm, 5 μm, 7 μm, 9 μm, 11 μm, 13 μm or 15 μm, but is not limited to the enumerated values, and other non-enumerated values within the numerical range are also applicable.
Preferably, the red quantum dot deposition unit and the green quantum dot deposition unit have the same thickness.
Preferably, the red quantum dot deposition unit comprises a first transparent conductive material and a red quantum dot material which are arranged in a stacked manner; the first transparent conductive material is connected with the quantum dot deposition substrate.
Preferably, the green quantum dot deposition unit comprises a second transparent conductive material and a green quantum dot material which are arranged in a stacked manner; the second transparent conductive material is connected with the quantum dot deposition substrate.
Preferably, the red light quantum dot material and the green light quantum dot material are both AXMYEZAnd (3) system materials.
The element A is any one or a combination of at least two of Ba, Ag, Na, Fe, In, Cd, Zn, Ga, Mg, Pb or Cs, and typical but non-limiting combinations include Ba and Ag, Na and Fe, In and Cd, Zn and Ga, Mg and Pb, Cs, Ba and Ag, Na, Fe and In, Cd, Zn and Ga, Mg, Pb and Cs, Ba, Ag, Na and Fe, In, Cd, Zn and Ga, or Mg, Pb, Cs and Ba.
The M element is any one or a combination of at least two of S, Cl, O, As, N, P, Se, Te, Ti, Zr or Pb, and typical but non-limiting combinations include S in combination with Cl, O in combination with As, N in combination with P, Se in combination with Te, Ti in combination with Zr, Pb, S in combination with Cl, O, As in combination with N, P, Se in combination with Te, Ti, Zr in combination with Pb, S, Cl, O in combination with As, N, P, Se in combination with Te, or Ti, Zr, Pb and S.
The element E is any one or combination of at least two of S, As, Se, O, Cl, Br or I, and typical but non-limiting combinations include combinations of S and As, combinations of Se and O, combinations of Cl and Br, combinations of I and S, combinations of As, Se and O, combinations of Cl, Br and I, combinations of S, As, Se and O, combinations of O, Cl, Br and I, or combinations of As, Se, O, Cl and Br.
X is 0.3 to 2.0, and may be, for example, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9 or 2.0, but is not limited to the values listed, and other values not listed within the numerical range are also applicable.
Y is 0.5 to 3.0, and may be, for example, 0.5, 0.7, 0.9, 1.0, 1.1, 1.3, 1.5, 1.7, 1.9, 2.0, 2.1, 2.3, 2.5, 2.7, 2.9 or 3.0, but is not limited to the values listed, and other values not listed in the numerical range are also applicable.
Z is 0 to 4.0, and may be, for example, 0, 0.25, 0.5, 0.75, 1.0, 1.25, 1.5, 1.75, 2.0, 2.25, 2.5, 2.75, 3.0, 3.25, 3.5, 3.75 or 4.0, but is not limited to the values recited, and other values not recited within the numerical range are also applicable.
In the present invention, the particle size of the red light quantum dot material is 7 to 12nm, and may be, for example, 7nm, 7.5nm, 8nm, 8.5nm, 9nm, 9.5nm, 10nm, 10.5nm, 11nm, 11.5nm or 12nm, but is not limited to the above-mentioned values, and other values not shown in the above-mentioned value range are also applicable.
In the present invention, the particle size of the green quantum dot material is 3 to 7nm, and may be, for example, 3nm, 3.5nm, 4nm, 4.5nm, 5nm, 5.5nm, 6nm, 6.5nm or 7nm, but is not limited to the above-mentioned values, and other values not listed in the above-mentioned range are also applicable.
The particle size of the red light quantum dot material and the green light quantum dot material determines the emission spectrum of each under the excitation of blue light, namely the color of the emitted light after the quantum dots are excited is determined by the size of the quantum dots under the condition that the quantum dot material is determined.
Preferably, the first transparent conductive material comprises any one of or a combination of at least two of an ITO thin film, a transparent conductive glass, or zinc oxide, and typical but non-limiting combinations include a combination of an ITO thin film and a transparent conductive glass, a combination of a transparent conductive glass and zinc oxide, a combination of an ITO thin film and zinc oxide, or a combination of an ITO thin film, a transparent conductive glass, or zinc oxide.
The second transparent conductive material comprises any one of or a combination of at least two of an ITO thin film, a transparent conductive glass or zinc oxide, and typical but non-limiting combinations include a combination of an ITO thin film and a transparent conductive glass, a combination of a transparent conductive glass and zinc oxide, a combination of an ITO thin film and zinc oxide, or a combination of an ITO thin film, a transparent conductive glass or zinc oxide.
Preferably, the quantum dot deposition layer is prepared by a method comprising the following steps:
(1) preparing a red light quantum dot electrodeposition solution and a green light quantum dot electrodeposition solution respectively, wherein the red light quantum dot electrodeposition solution and the green light quantum dot electrodeposition solution have opposite electrical properties;
(2) mixing the red light quantum dot electrodeposition solution and the green light quantum dot electrodeposition solution prepared in the step (1), and immersing the quantum dot deposition substrate into the mixed quantum dot electrodeposition solution;
(3) and applying opposite electrodes to a red quantum dot deposition unit and a green quantum dot deposition unit of the quantum dot deposition substrate respectively, and finishing the electrodeposition reaction of the red light quantum dots and the green light quantum dots in one step under the action of an external direct current electric field.
The electrical property of the red light quantum dot electrodeposition solution and the green light quantum dot electrodeposition solution in the step (1) is determined by quantum dot surface modification treatment in the respective quantum dot electrodeposition solutions, the modification treatment is to bond organic salt substances containing ionic bonds on the surfaces of the quantum dots, the organic salt substances are easy to get and lose electrons after being dissolved to form charged ions, for example, the organic salt substances can be any one or combination of at least two of fatty acid salt, sulfuric acid ester salt, phosphoric acid ester salt, fatty amine salt, ethanolamine salt or polyethylene polyammonium salt, typical but non-limiting combinations include the combination of fatty acid salt and sulfuric acid ester salt, the combination of sulfuric acid ester salt and phosphoric acid ester salt, the combination of phosphoric acid ester salt and fatty amine salt, the combination of fatty amine salt and ethanolamine salt, the combination of ethanolamine salt and polyethylene polyammonium salt, the combination of fatty acid salt, sulfuric acid ester salt and phosphoric acid ester salt, the combination of sulfuric acid ester salt and sulfuric acid ester salt, the combination of sulfuric acid ester, A combination of a phosphate salt and a fatty amine salt, a combination of a phosphate salt, a fatty amine salt and an ethanolamine salt, or a combination of a fatty amine salt, an ethanolamine salt and a polyvinyl ammonium salt.
Preferably, the red light quantum dot material concentration in the red light quantum dot electrodeposition solution in the step (1) is as follows: 0.05 to 0.5mol/L, for example, 0.05mol/L, 0.1mol/L, 0.15mol/L, 0.2mol/L, 0.25mol/L, 0.3mol/L, 0.35mol/L, 0.4mol/L, 0.45mol/L or 0.5mol/L, but not limited to the values listed, and other values not listed in the numerical range are also applicable.
Preferably, the concentration of the red light quantum dot material in the green light quantum dot electrodeposition solution in the step (1) is as follows: 0.1 to 0.8mol/L, for example, may be 0.1mol/L, 0.2mol/L, 0.3mol/L, 0.4mol/L, 0.5mol/L, 0.6mol/L, 0.7mol/L or 0.8mol/L, but is not limited to the values listed, and other values not listed in the numerical range are also applicable.
Preferably, the voltage of the dc electric field in step (3) is 1-12V, such as 1V, 2V, 3V, 4V, 5V, 6V, 7V, 8V, 9V, 10V, 11V or 12V, but is not limited to the recited values, and other values not recited in the range of values are also applicable.
Preferably, the current of the dc electric field in step (3) is 1-45A, such as 1A, 5A, 10A, 15A, 20A, 25A, 30A, 35A, 40A or 45A, but is not limited to the recited values, and other values not recited in the range of values are also applicable.
Preferably, the electrodeposition reaction time in step (3) is 1-35min, such as 1min, 5min, 10min, 15min, 20min, 25min, 30min or 35min, but is not limited to the recited values, and other values not recited in the range of values are also applicable.
The electro-deposition reaction in the step (3) can realize pixel-level coating of the quantum dot material, improve the display resolution, and has simple process and low manufacturing cost, thereby realizing batch production.
In a second aspect, the present invention provides a use of a quantum dot electrodeposition based display device as described in the first aspect, the use comprising using the quantum dot electrodeposition based display device for OLED display, LCD display, Micro-LED display or Mini-LED display.
Compared with the prior art, the invention has the following beneficial effects:
(1) according to the display device based on quantum dot electrodeposition, the red quantum dot deposition unit and the green quantum dot deposition unit in the quantum dot deposition layer are excited by the blue light backlight source to respectively and independently emit red light and green light, and the blue light transmitted by the blue light transmission unit is compounded, so that color display is realized;
(2) the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit in the quantum dot deposition layer are all in pixel-level size, the display resolution is high, the three pixel units are separately and independently arranged, and the red light, the green light and the blue light are respectively and independently emitted, so that the optical filter can be eliminated, the light passing rate and the light effect are improved, and the overall power consumption of the display device is reduced;
(3) the invention adopts the electrodeposition reaction to prepare the quantum dot deposition layer, realizes the pixel-level coating of the quantum dot luminescent material, has simple process and low manufacturing cost, and can realize batch production;
(4) the display device based on quantum dot electrodeposition can be used for various display devices such as OLED display, LCD display, Micro-LED display or Mini-LED display and the like, and has good application compatibility.
Drawings
Fig. 1 is a schematic structural diagram of a display device based on quantum dot electrodeposition provided in embodiment 1;
fig. 2 is a color gamut range diagram of a display device based on quantum dot electrodeposition provided in example 1;
fig. 3 is a display spectrum of the quantum dot electrodeposition-based display device provided in example 1.
Wherein: 10, a blue light backlight source; 20, quantum dot deposition layer; 100, a backlight substrate; 101, emitting a pixel point; 200, a quantum dot deposition substrate; 201, a red quantum dot deposition unit; 202, a green quantum dot deposition unit; 203, blue light transmitting unit.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
Example 1
The present embodiment provides a display device based on quantum dot electrodeposition as shown in fig. 1, which includes a blue light backlight 10 and a quantum dot deposition layer 20 stacked together; the blue light backlight 10 includes a backlight substrate 100 and light-emitting pixels 101 uniformly disposed on the backlight substrate 100; the quantum dot deposition layer 20 comprises a quantum dot deposition substrate 200, and a red quantum dot deposition unit 201, a green quantum dot deposition unit 202 and a blue light transmission unit 203 which are uniformly arranged on the quantum dot deposition substrate 200; and the areas of the red quantum dot deposition unit 201, the green quantum dot deposition unit 202 and the blue light transmission unit 203 are all 500 μm2The thicknesses of the red quantum dot deposition unit 201 and the green quantum dot deposition unit 202 are both 7.6 μm.
The quantum dot deposition substrate 200 is connected with the blue light backlight source 10; the positions of the light-emitting pixel 101, the red quantum dot deposition unit 201, the green quantum dot deposition unit 202 and the blue light transmission unit 203 are in one-to-one correspondence, so that the light-emitting pixel 101 provides excitation blue light for the pixel units at the corresponding positions.
The red quantum dot deposition unit 201 comprises an ITO thin film and a red light quantum dot material CdSe with the grain diameter of 9.5nm which are stacked, and the ITO thin film is connected with the quantum dot deposition substrate 200; the green quantum dot deposition unit 202 includes an ITO thin film and a green quantum dot material CdSe having a particle size of 5nm, which are stacked, and the ITO thin film is connected to the quantum dot deposition substrate 200.
The quantum dot deposition layer 20 is prepared by the following method, and the method comprises the following steps:
(1) mixing the sodium oleate solution with the red light quantum dot solution to prepare a negatively charged red light quantum dot electrodeposition solution; mixing the dodecyl trimethyl ammonium chloride solution with the green light quantum dot solution to prepare a positively charged green light quantum dot solution; the CdSe concentration of the red light quantum dot material in the red light quantum dot electro-deposition solution is 0.28mol/L, and the CdSe concentration of the green light quantum dot material in the green light quantum dot electro-deposition solution is 0.45 mol/L;
(2) mixing the red light quantum dot electrodeposition solution and the green light quantum dot electrodeposition solution prepared in the step (1), and immersing the quantum dot deposition substrate 200 in the mixed quantum dot electrodeposition solution;
(3) and (3) switching on the anode of the power supply for the red quantum dot deposition unit 201, switching on the cathode of the power supply for the green quantum dot deposition unit 202, and continuing for 18min under the action of an external direct current electric field with the voltage of 6V and the current of 23A to finish the electrodeposition reaction of the red light and the green light quantum dots.
The color gamut of the display device based on quantum dot electrodeposition provided by the embodiment is about 120% NTSC, which is substantially greater than 72% NTSC color gamut of the conventional display (see fig. 2); in addition, the red, green and blue light emitted by the display device provided by the embodiment has narrow spectrums, no mutual overlapping, and high color purity, and is obviously superior to the conventional LED backlight source and LCD display (see fig. 3).
In the display device based on quantum dot electrodeposition provided in this embodiment, the blue light backlight 10 excites the red quantum dot deposition unit 201 and the green quantum dot deposition unit 201 in the quantum dot deposition layer 20 to respectively and independently emit red light and green light, and blue light transmitted by the blue light transmission unit 203 is compounded, so that color display is realized; the red quantum dot deposition unit 201, the green quantum dot deposition unit 202 and the blue light transmission unit 203 in the quantum dot deposition layer 20 are all in pixel-level size, the display resolution is high, the three pixel units are separately and independently arranged, and red light, green light and blue light are respectively and independently emitted, so that an optical filter can be eliminated, the light passing rate and the light effect are improved, and the overall power consumption of a display device is reduced; the quantum dot deposition layer 20 is prepared by adopting an electrodeposition reaction, so that pixel-level coating of the quantum dot luminescent material is realized, the process is simple, the manufacturing cost is low, and batch production can be realized; the display device based on quantum dot electrodeposition provided by the embodiment can be used for various display devices such as OLED display, LCD display, Micro-LED display or Mini-LED display, and has good application compatibility.
Example 2
The embodiment provides a display device based on quantum dot electrodeposition, which comprises a blue light backlight source and a quantum dot deposition layer which are arranged in a stacked manner; the blue light backlight source comprises a backlight source substrate and light-emitting pixel points uniformly arranged on the backlight source substrate; the quantum dot deposition layer comprises a quantum dot deposition substrate, and a red quantum dot deposition unit, a green quantum dot deposition unit and a blue light transmission unit which are uniformly arranged on the quantum dot deposition substrate; and the areas of the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit are all 250 mu m2And the thicknesses of the red quantum dot deposition unit and the green quantum dot deposition unit are both 3.9 mu m.
The quantum dot deposition substrate is connected with the blue light backlight source; the positions of the light-emitting pixel points are in one-to-one correspondence with the positions of the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit, so that the light-emitting pixel points provide excited blue light for the pixel units in the corresponding positions.
The red quantum dot deposition unit comprises transparent conductive glass and red light quantum dot material CsPbBr with the particle size of 10.75nm which are arranged in a laminated manner3The transparent conductive glass is connected with the quantum dot deposition substrate; the green quantum dot deposition unit comprises transparent conductive glass and a green quantum dot material CsPbBr with the particle size of 6nm which are arranged in a laminated manner3And the transparent conductive glass is connected with the quantum dot deposition substrate.
The quantum dot deposition layer is prepared by the following method, and the method comprises the following steps:
(1) mixing the sodium dodecyl sulfate solution and the red light quantum dot solution to prepare a negatively charged red light quantum dot electrodeposition solution; mixing the ethanolamine hydrochloride solution with the green light quantum dot solution to prepare a positively charged green light quantum dot solution; wherein the red light quantum dot material CsPbBr in the red light quantum dot electrodeposition solution3The concentration is 0.39mol/L, and the green light quantum dot material CsPbBr in the green light quantum dot electrodeposition solution3The concentration is 0.63 mol/L;
(2) mixing the red light quantum dot electrodeposition solution and the green light quantum dot electrodeposition solution prepared in the step (1), and immersing the quantum dot deposition substrate into the mixed quantum dot electrodeposition solution;
(3) and (3) switching on the red quantum dot deposition unit to the anode of a power supply, switching on the green quantum dot deposition unit to the cathode of the power supply, and continuing for 27min under the action of an external direct current electric field with the voltage of 9V and the current of 34A to finish the electrodeposition reaction of the red light and the green light quantum dots.
The color gamut and the display spectrum of the display device based on quantum dot electrodeposition provided in this embodiment are substantially the same as those of embodiment 1, and therefore, the description thereof is omitted here.
In the display device based on quantum dot electrodeposition provided by this embodiment, the blue light backlight excites the red quantum dot deposition unit and the green quantum dot deposition unit in the quantum dot deposition layer to respectively and independently emit red light and green light, and blue light transmitted by the blue light transmission unit is compounded, so that color display is realized; the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit in the quantum dot deposition layer are all in pixel-level size, the display resolution is high, the three pixel units are separately and independently arranged, and the red light, the green light and the blue light are respectively and independently emitted, so that the optical filter can be eliminated, the light passing rate and the light effect are improved, and the overall power consumption of the display device is reduced; the quantum dot deposition layer is prepared by adopting electrodeposition reaction, pixel-level coating of the quantum dot luminescent material is realized, the process is simple, the manufacturing cost is low, and batch production can be realized; the display device based on quantum dot electrodeposition provided by the embodiment can be used for various display devices such as OLED display, LCD display, Micro-LED display or Mini-LED display, and has good application compatibility.
Example 3
The embodiment provides a display device based on quantum dot electrodeposition, which comprises a blue light backlight source and a quantum dot deposition layer which are arranged in a stacked manner; the blue light backlight source comprises a backlight source substrate and light-emitting pixel points uniformly arranged on the backlight source substrate; the quantum dot deposition layer comprises a quantum dot deposition substrate, and a red quantum dot deposition unit, a green quantum dot deposition unit and a blue light transmission unit which are uniformly arranged on the quantum dot deposition substrate; and the areas of the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit are all 750 mu m2And the thicknesses of the red quantum dot deposition unit and the green quantum dot deposition unit are both 11.3 mu m.
The quantum dot deposition substrate is connected with the blue light backlight source; the positions of the light-emitting pixel points are in one-to-one correspondence with the positions of the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit, so that the light-emitting pixel points provide excited blue light for the pixel units in the corresponding positions.
The red quantum dot deposition unit comprises zinc oxide and a red light quantum dot material CuInS with the particle size of 8.25nm which are arranged in a stacked mode2The zinc oxide is connected with the quantum dot deposition substrate; the green quantum dot deposition unit comprises zinc oxide and a green quantum dot material Na with the particle size of 4nm which are arranged in a stacked mode1.2O1.8Se2.0Said CuInS2And the quantum dot deposition substrate is connected with the substrate.
The quantum dot deposition layer is prepared by the following method, and the method comprises the following steps:
(1) mixing the sodium dodecyl phosphate solution and the red light quantum dot solution to prepare a negatively charged red light quantum dot electrodeposition solution; mixing cetyl pyridine bromide solution and green light quantum dot solution, and preparingA positively charged green light quantum dot solution; wherein the red light quantum dot material CuInS in the red light quantum dot electrodeposition solution2The concentration is 0.17mol/L, and the green light quantum dot material CuInS in the green light quantum dot electrodeposition solution2The concentration is 0.28 mol/L;
(2) mixing the red light quantum dot electrodeposition solution and the green light quantum dot electrodeposition solution prepared in the step (1), and immersing the quantum dot deposition substrate into the mixed quantum dot electrodeposition solution;
(3) and (3) switching on the red quantum dot deposition unit to the anode of a power supply, switching on the green quantum dot deposition unit to the cathode of the power supply, and continuing for 9min under the action of an external direct current electric field with the voltage of 3V and the current of 12A to finish the electrodeposition reaction of the red light and the green light quantum dots.
The color gamut and the display spectrum of the display device based on quantum dot electrodeposition provided in this embodiment are substantially the same as those of embodiment 1, and therefore, the description thereof is omitted here.
In the display device based on quantum dot electrodeposition provided by this embodiment, the blue light backlight excites the red quantum dot deposition unit and the green quantum dot deposition unit in the quantum dot deposition layer to respectively and independently emit red light and green light, and blue light transmitted by the blue light transmission unit is compounded, so that color display is realized; the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit in the quantum dot deposition layer are all in pixel-level size, the display resolution is high, the three pixel units are separately and independently arranged, and the red light, the green light and the blue light are respectively and independently emitted, so that the optical filter can be eliminated, the light passing rate and the light effect are improved, and the overall power consumption of the display device is reduced; the quantum dot deposition layer is prepared by adopting electrodeposition reaction, pixel-level coating of the quantum dot luminescent material is realized, the process is simple, the manufacturing cost is low, and batch production can be realized; the display device based on quantum dot electrodeposition provided by the embodiment can be used for various display devices such as OLED display, LCD display, Micro-LED display or Mini-LED display, and has good application compatibility.
Example 4
The embodiment provides a method based on quantum dot electrodepositionThe display device comprises a blue light backlight source and a quantum dot deposition layer which are arranged in a stacked mode; the blue light backlight source comprises a backlight source substrate and light-emitting pixel points uniformly arranged on the backlight source substrate; the quantum dot deposition layer comprises a quantum dot deposition substrate, and a red quantum dot deposition unit, a green quantum dot deposition unit and a blue light transmission unit which are uniformly arranged on the quantum dot deposition substrate; and the areas of the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit are all 1 mu m2And the thicknesses of the red quantum dot deposition unit and the green quantum dot deposition unit are both 0.2 mu m.
The quantum dot deposition substrate is connected with the blue light backlight source; the positions of the light-emitting pixel points are in one-to-one correspondence with the positions of the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit, so that the light-emitting pixel points provide excited blue light for the pixel units in the corresponding positions.
The red quantum dot deposition unit comprises an ITO thin film and a red light quantum dot material AgInSe with the particle size of 12nm which are arranged in a stacked mode2The ITO film is connected with the quantum dot deposition substrate; the green quantum dot deposition unit comprises an ITO thin film and a green quantum dot material AgInSe with the grain diameter of 3nm which are arranged in a stacked mode2And the ITO film is connected with the quantum dot deposition substrate.
The quantum dot deposition layer is prepared by the following method, and the method comprises the following steps:
(1) mixing the dodecyl trimethyl ammonium chloride solution with the red light quantum dot solution to prepare a positively charged red light quantum dot electrodeposition solution; mixing the sodium oleate solution with the green light quantum dot solution to prepare a negatively charged green light quantum dot solution; wherein the red light quantum dot material AgInSe in the red light quantum dot electrodeposition solution2The concentration is 0.5mol/L, and the green light quantum dot material AgInSe in the green light quantum dot electrodeposition solution2The concentration is 0.8 mol/L;
(2) mixing the red light quantum dot electrodeposition solution and the green light quantum dot electrodeposition solution prepared in the step (1), and immersing the quantum dot deposition substrate into the mixed quantum dot electrodeposition solution;
(3) and (3) switching on the cathode of the power supply for the red quantum dot deposition unit, switching on the anode of the power supply for the green quantum dot deposition unit, and continuing for 35min under the action of an external direct current electric field with the voltage of 12V and the current of 45A to finish the electrodeposition reaction of the red light and the green light quantum dots.
The color gamut and the display spectrum of the display device based on quantum dot electrodeposition provided in this embodiment are substantially the same as those of embodiment 1, and therefore, the description thereof is omitted here.
In the display device based on quantum dot electrodeposition provided by this embodiment, the blue light backlight excites the red quantum dot deposition unit and the green quantum dot deposition unit in the quantum dot deposition layer to respectively and independently emit red light and green light, and blue light transmitted by the blue light transmission unit is compounded, so that color display is realized; the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit in the quantum dot deposition layer are all in pixel-level size, the display resolution is high, the three pixel units are separately and independently arranged, and the red light, the green light and the blue light are respectively and independently emitted, so that the optical filter can be eliminated, the light passing rate and the light effect are improved, and the overall power consumption of the display device is reduced; the quantum dot deposition layer is prepared by adopting electrodeposition reaction, pixel-level coating of the quantum dot luminescent material is realized, the process is simple, the manufacturing cost is low, and batch production can be realized; the display device based on quantum dot electrodeposition provided by the embodiment can be used for various display devices such as OLED display, LCD display, Micro-LED display or Mini-LED display, and has good application compatibility.
Example 5
The embodiment provides a display device based on quantum dot electrodeposition, which comprises a blue light backlight source and a quantum dot deposition layer which are arranged in a stacked manner; the blue light backlight source comprises a backlight source substrate and light-emitting pixel points uniformly arranged on the backlight source substrate; the quantum dot deposition layer comprises a quantum dot deposition substrate, and a red quantum dot deposition unit, a green quantum dot deposition unit and a blue light transmission unit which are uniformly arranged on the quantum dot deposition substrate; and the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unitThe area of the elements is 1000 μm2And the thicknesses of the red quantum dot deposition unit and the green quantum dot deposition unit are both 15 micrometers.
The quantum dot deposition substrate is connected with the blue light backlight source; the positions of the light-emitting pixel points are in one-to-one correspondence with the positions of the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit, so that the light-emitting pixel points provide excited blue light for the pixel units in the corresponding positions.
The red quantum dot deposition unit comprises transparent conductive glass and a red light quantum dot material CsPbI with the particle size of 7nm which are arranged in a laminated mode3The transparent conductive glass is connected with the quantum dot deposition substrate; the green quantum dot deposition unit comprises transparent conductive glass and a green quantum dot material CsPbI with the grain diameter of 3nm which are arranged in a laminated manner3And the transparent conductive glass is connected with the quantum dot deposition substrate.
The quantum dot deposition layer is prepared by the following method, and the method comprises the following steps:
(1) mixing the ethanolamine hydrochloride solution with the red light quantum dot solution to prepare a positively charged red light quantum dot electrodeposition solution; mixing the sodium dodecyl sulfate solution and the green light quantum dot solution to prepare a negatively charged green light quantum dot solution; wherein the red light quantum dot material CsPbI in the red light quantum dot electrodeposition solution3The concentration is 0.05mol/L, and the green light quantum dot material CsPbI in the green light quantum dot electrodeposition solution3The concentration is 0.1 mol/L;
(2) mixing the red light quantum dot electrodeposition solution and the green light quantum dot electrodeposition solution prepared in the step (1), and immersing the quantum dot deposition substrate into the mixed quantum dot electrodeposition solution;
(3) and (3) switching on the red quantum dot deposition unit to the cathode of a power supply, switching on the green quantum dot deposition unit to the anode of the power supply, and continuing for 1min under the action of an external direct current electric field with the voltage of 1V and the current of 1A to finish the electrodeposition reaction of the red light and the green light quantum dots.
The color gamut and the display spectrum of the display device based on quantum dot electrodeposition provided in this embodiment are substantially the same as those of embodiment 1, and therefore, the description thereof is omitted here.
In the display device based on quantum dot electrodeposition provided by this embodiment, the blue light backlight excites the red quantum dot deposition unit and the green quantum dot deposition unit in the quantum dot deposition layer to respectively and independently emit red light and green light, and blue light transmitted by the blue light transmission unit is compounded, so that color display is realized; the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit in the quantum dot deposition layer are all in pixel-level size, the display resolution is high, the three pixel units are separately and independently arranged, and the red light, the green light and the blue light are respectively and independently emitted, so that the optical filter can be eliminated, the light passing rate and the light effect are improved, and the overall power consumption of the display device is reduced; the quantum dot deposition layer is prepared by adopting electrodeposition reaction, pixel-level coating of the quantum dot luminescent material is realized, the process is simple, the manufacturing cost is low, and batch production can be realized; the display device based on quantum dot electrodeposition provided by the embodiment can be used for various display devices such as OLED display, LCD display, Micro-LED display or Mini-LED display, and has good application compatibility.
Comparative example 1
The present comparative example provides a display device including a white light backlight and a color filter which are stacked; the white light backlight source comprises a backlight source substrate and light-emitting pixel points uniformly arranged on the backlight source substrate; the color filter comprises a red filter, a green filter and a blue filter, and the areas of the red filter, the green filter and the blue filter are all 500 mu m2。
According to the display device provided by the comparative example, white light emitted by the white light backlight source is converted into red light, green light and blue light respectively and independently through the red filter, the green filter and the blue filter in the color filter, and color display is achieved compositely.
Compared with the embodiments 1 to 5, the comparative example 1 converts the white light into the red light, the green light and the blue light by using the color filter, the color purity of the converted light is not high, the display color gamut is narrow, the light passing rate and the light efficiency are reduced in the process, and the overall power consumption of the display device is increased; in addition, the color filters are not of a pixel-level size, thereby reducing the resolution of the display device.
In summary, in the display device based on quantum dot electrodeposition provided by the invention, the blue light backlight excites the red quantum dot deposition unit and the green quantum dot deposition unit in the quantum dot deposition layer to respectively and independently emit red light and green light, and blue light transmitted by the blue light transmission unit is compounded, so that color display is realized; the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit in the quantum dot deposition layer are all in pixel-level size, the display resolution is high, the three pixel units are separately and independently arranged, and the red light, the green light and the blue light are respectively and independently emitted, so that the optical filter can be eliminated, the light passing rate and the light effect are improved, and the overall power consumption of the display device is reduced; the quantum dot deposition layer is prepared by adopting electrodeposition reaction, pixel-level coating of the quantum dot luminescent material is realized, the process is simple, the manufacturing cost is low, and batch production can be realized; the display device based on quantum dot electrodeposition can be used for various display devices such as OLED display, LCD display, Micro-LED display or Mini-LED display and the like, and has good application compatibility.
The applicant declares that the above description is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be understood by those skilled in the art that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are within the scope and disclosure of the present invention.
Claims (10)
1. A display device based on quantum dot electrodeposition is characterized by comprising a blue light backlight source and a quantum dot deposition layer which are arranged in a stacked mode;
the blue light backlight source comprises a backlight source substrate and at least 2 light-emitting pixel points which are uniformly arranged on the backlight source substrate;
the quantum dot deposition layer comprises a quantum dot deposition substrate and at least 2 pixel units uniformly arranged on the quantum dot deposition substrate;
the quantum dot deposition substrate is connected with the blue light backlight source;
the light-emitting pixel points correspond to the positions of the pixel units one by one, so that the light-emitting pixel points provide excitation blue light for the pixel units;
the pixel unit comprises a red quantum dot deposition unit, a green quantum dot deposition unit and a blue light transmission unit.
2. The quantum dot electrodeposition-based display device according to claim 1, wherein the red quantum dot deposition unit has an area of 1 to 1000 μm2；
Preferably, the area of the green quantum dot deposition unit is 1-1000 μm2；
Preferably, the area of the blue light transmission unit is 1-1000 μm2；
Preferably, the red quantum dot deposition unit, the green quantum dot deposition unit and the blue light transmission unit have the same area.
3. The quantum dot electrodeposition-based display device according to claim 1 or 2, wherein the thickness of the red quantum dot deposition unit is 0.2 to 15 μm;
preferably, the thickness of the green quantum dot deposition unit is 0.2-15 μm;
preferably, the red quantum dot deposition unit and the green quantum dot deposition unit have the same thickness.
4. The quantum dot electrodeposition-based display device according to any one of claims 1 to 3, wherein the red quantum dot deposition unit comprises a first transparent conductive material and a red quantum dot material which are arranged in a stack, the first transparent conductive material being connected to the quantum dot deposition substrate;
preferably, the green quantum dot deposition unit comprises a second transparent conductive material and a green quantum dot material which are arranged in a stacked manner, and the second transparent conductive material is connected with the quantum dot deposition substrate.
5. The quantum dot electrodeposition-based display device according to claim 4, wherein the red quantum dot material and the green quantum dot material are both AXMYEZA system material;
the element A is any one or the combination of at least two of Ba, Ag, Na, Fe, In, Cd, Zn, Ga, Mg, Pb or Cs;
the M element is any one or the combination of at least two of S, Cl, O, As, N, P, Se, Te, Ti, Zr or Pb;
the element E is any one or the combination of at least two of S, As, Se, O, Cl, Br or I;
x is 0.3-2.0; y is 0.5-3.0 and Z is 0-4.0.
6. The quantum dot electrodeposition-based display device according to claim 4 or 5, wherein the first transparent conductive material comprises any one of an ITO thin film, a transparent conductive glass, or zinc oxide, or a combination of at least two thereof;
preferably, the second transparent conductive material includes any one of an ITO thin film, a transparent conductive glass, or zinc oxide, or a combination of at least two thereof.
7. The quantum dot electrodeposition-based display device according to any one of claims 1 to 6, wherein the quantum dot deposition layer is a quantum dot deposition layer prepared by a method comprising:
(1) preparing a red light quantum dot electrodeposition solution and a green light quantum dot electrodeposition solution respectively, wherein the red light quantum dot electrodeposition solution and the green light quantum dot electrodeposition solution have opposite electrical properties;
(2) mixing the red light quantum dot electrodeposition solution and the green light quantum dot electrodeposition solution prepared in the step (1), and immersing the quantum dot deposition substrate into the mixed quantum dot electrodeposition solution;
(3) and applying opposite electrodes to the red quantum dot deposition unit and the green quantum dot deposition unit of the quantum dot deposition substrate respectively, and finishing the electrodeposition reaction of the red light quantum dots and the green light quantum dots under the action of an external direct current electric field.
8. The quantum dot electrodeposition-based display device according to claim 7, wherein the red quantum dot material concentration in the red quantum dot electrodeposition solution of step (1) is: 0.05-0.5 mol/L;
preferably, the concentration of the green light quantum dot material in the green light quantum dot electrodeposition solution in the step (1) is as follows: 0.1-0.8 mol/L.
9. The quantum dot electrodeposition-based display device according to claim 7 or 8, wherein the voltage of the direct current electric field in the step (3) is 1 to 12V, and the current is 1 to 45A;
preferably, the time of the electrodeposition reaction in the step (3) is 1-35 min.
10. Use of a quantum dot electrodeposition based display device according to any of claims 1 to 9, wherein the use comprises using the quantum dot electrodeposition based display device for OLED display, LCD display, Micro-LED display or Mini-LED display.
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| JP7548995B2 (en) | 2022-01-13 | 2024-09-10 | 深▲セン▼市▲華▼星光▲電▼半▲導▼体▲顕▼示技▲術▼有限公司 | Composite thin film, its preparation method and display panel |
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| CN112635642B (en) | 2022-08-02 |
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