CN112635622A - 一种perc双面电池背膜优化工艺 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 14
- 230000008569 process Effects 0.000 title claims abstract description 14
- 238000005457 optimization Methods 0.000 title claims abstract description 8
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract 3
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract 3
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000002161 passivation Methods 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 239000003513 alkali Substances 0.000 claims abstract description 13
- 238000005498 polishing Methods 0.000 claims abstract description 13
- 238000000137 annealing Methods 0.000 claims abstract description 8
- 238000012360 testing method Methods 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 238000005516 engineering process Methods 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 8
- 230000007547 defect Effects 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 2
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 230000009286 beneficial effect Effects 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000013072 incoming material Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 241000282414 Homo sapiens Species 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000282412 Homo Species 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明公开了一种PERC双面电池背膜优化工艺，涉及晶硅太阳能电池生产制造技术领域，本发明包括如下步骤：制绒、扩散、激光掺杂、前氧化、碱抛光、制作电池片背面钝化膜层、制作电池片正面钝化膜层、退火、测试分选电池片的电性能。电池片背面钝化膜层为4层不同折射率的氮化硅膜层，4层氮化硅膜层的折射率为高中中低排布，其中底层为高折射率，本发明具有结构简单，PERC双面背膜工艺高中中低膜层结构，提升电池效率改善电池片组件可靠性PID的优点。
Description
技术领域
本发明涉及晶硅太阳能电池生产制造技术领域，更具体的是涉及PERC双面电池背膜优化工艺技术领域。
背景技术
随着人类社会的高速发展，环境恶化与能源短缺己成为全世界最为突出的问题。目前，全球总能耗的70％以上都来自石油、天然气、煤等化石能源。这些常规能源都是不可再生能源，无论从世界还是从中国来看，常规能源都是很有限的，因此，开发利用可再生能源、实现能源工业可持续发展的任务更加迫切，更具深远的意义。太阳能是人类最主要的可再生资源。太阳能以其独具的优势，其开发利用是最终解决常规能源特别是石化能源短缺、环境污染和温室效应等问题的有效途径，是人类理想的替代能源。太阳能是指太阳的热辐射能，主要表现就是常说的太阳光线，其中太阳能电池片就是将太阳能转化为电能的半导体器件。
在光伏领域，当太阳光照射到太阳能电池表面时，有一部分光被反射，裸硅片的反射率高达33％，造成很大的光损失，导致产生的载流子减少，最终引起电池效率下降，因此减少光在电池表面的反射就变得很有必要，根据薄膜干涉原理，在电池表面镀一层或多层薄膜，可以有效减少光的反射，这种膜就是所谓的减反膜。减反膜的基本原理是利用光在减反射膜上下表面反射所产生的光程差，使两束反射光干涉相消，减弱反射增加透射。氮化硅薄膜是一种物理、化学性能十分优良的介质膜，具有优良的光电性能、化学稳定性、热稳定性和抗高温氧化性，抗杂质扩散和水汽渗透能力强，硬度高，耐磨损性能好，因此，氮化硅不仅是理想的减反射膜，而且还可以同时达到钝化的效果。
PERC太阳能电池(PERC)结构最早于1989年由新南威尔士大学研究提出，目前已高度量产的电池类型，此技术路线为制绒-扩散-激光SE-刻蚀-热氧-背面氧化铝-正镀膜-背镀膜-丝网印刷。双面电池背面光照也能发电，与单面电池相比，主要是背镀膜及丝印不同，在背镀膜工序，主要是沉积SiNx薄膜，其目的是为了保护氧化铝，钝化背面缺陷，减少光的反射；因此，在双面电池工艺路线中背镀膜工序尤为重要。关于PERC双面电池目前产线背镀膜工艺，其膜层结构主要是5层膜，底层为低折射率，效率较低、可靠性PID较差。
现有PERC电池片背膜工艺膜层结构为低高中中低，内层膜富N，内层膜的晶格结构与Si基底的结构没有富Si匹配，SiNx-Si界面的界面态数量比富Si多，有效复合中心数量较多，钝化效果较差，影响电池效率的同时也影响可靠性。
发明内容
本发明的目的在于：为了解决现有燃气表防水性能差，及电池盖闭合不稳定的问题，本发明提供一种PERC双面电池背膜优化工艺。
本发明为了实现上述目的具体采用以下技术方案：
一种PERC双面电池背膜优化工艺，包括如下步骤：
步骤1、制绒：采用槽式制绒设备，对单晶硅片进行制绒处理，形成金字塔绒面；
步骤2、扩散：采用管式高温扩散技术，对硅基体掺硼制备PN结；
步骤3、激光掺杂：对电池正面需金属化下方进行重掺杂；
步骤4、：前氧化：搭配碱抛光技术，对激光区域热氧化处理，提升激光区域抗碱腐蚀能力；
步骤5、：碱抛光：抛光去除硅片边缘PN结及表面缺陷,使背表面平整；
步骤6、制作电池片背面钝化膜层：使用PECVD技术，在硅片背表面沉积氧化铝薄膜，然后再在三氧化二铝薄膜表面沉积氮化硅薄膜，氮化硅薄膜包括4层不同折射率的氮化硅膜层，4层氮化硅膜层的折射率为高中中低排布，其中底层为高折射率；
步骤7、制作电池片正面钝化膜层；
步骤8：使用丝网印刷技术，制备电池片的正电极，背电极及背场；
步骤9、退火：使用高温烧结技术，使金属与硅之间形成良好的欧姆接触，电注入退火；
步骤10、测试分选电池片的电性能。
进一步地，步骤6中，在硅片背表面沉积10nm-14nm氧化铝薄膜，然后再在三氧化二铝薄膜表面沉积70nm—80nm氮化硅薄膜。
进一步地，步骤7中，使用PECVD技术，在硅片正表面沉积70-80nm氮化硅薄膜。
本发明的有益效果如下：
1、本发明设计一种PERC双面电池背膜工艺膜层为高中中低，底层高折钝化好有利于开路电压的提升；钝化作用的增强，修补了晶硅来料的缺陷，降低了硅片来料对电池性能的影响；高低膜层结构的光学匹配能有效降低光的反射，有利于短路电流的提升；从而电池效率得到提升，同时对电池片组件可靠性PID也有一定的改善。
2、本发明设计PERC双面背镀膜工艺膜层结构，将原有5层膜低高中中低结构优化为4层膜高中中低结构，内层膜富Si，内层膜的晶格结构与Si基底的结构越匹配，SiNx-Si界面的界面态数量越少，有效复合中心数量越少，使得电池转换效率提升；具体地，底层高折钝化好有利于开路电压的提升；钝化作用的增强，修补了晶硅来料的缺陷，降低了硅片来料对电池性能的影响；高低膜层结构的光学匹配能有效降低光的反射，有利于短路电流的提升；背膜高低结构不仅能提升电池效率，同时对电池片组件可靠性PID也有一定的改善。
附图说明
图1是现有PERC双面电池背面膜层结构。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。
实施例
实验选用晶向为<100>，尺寸为158.75mm×158.75mm硅片厚度为170±20um，电阻率为0.5-1.5Ω.cm的P型直拉单晶硅片，按如下加工方法制备1200片PERC双面电池：
一种PERC双面电池背膜优化工艺，包括如下步骤：
步骤1、制绒：采用槽式制绒设备，对单晶硅片进行制绒处理，形成金字塔绒面；
步骤2、扩散：采用管式高温扩散技术，对硅基体掺硼制备PN结；
步骤3、激光掺杂：对电池正面需金属化下方进行重掺杂；
步骤4、：前氧化：搭配碱抛光技术，对激光区域热氧化处理，提升激光区域抗碱腐蚀能力；
步骤5、：碱抛光：抛光去除硅片边缘PN结及表面缺陷,使背表面平整；
步骤6、制作电池片背面钝化膜层：使用PECVD技术，在硅片背表面沉积10nm-14nm氧化铝薄膜，然后再在三氧化二铝薄膜表面沉积70nm—80nm氮化硅薄膜，氮化硅薄膜包括4层不同折射率的氮化硅膜层，4层氮化硅膜层的折射率为高中中低排布，其中底层为高折射率；
步骤7、制作电池片正面钝化膜层：使用PECVD技术，在硅片正表面沉积70-80nm氮化硅薄膜；
步骤8：使用丝网印刷技术，制备电池片的正电极，背电极及背场；
步骤9、退火：使用高温烧结技术，使金属与硅之间形成良好的欧姆接触，电注入退火；
步骤10、测试分选电池片的电性能。
对比例：
实验选用晶向为<100>，尺寸为158.75mm×158.75mm硅片厚度为170±20um，电阻率为0.5-1.5Ω.cm的P型直拉单晶硅片，按如下加工方法制备1200片PERC双面电池：
第一步：采用槽式制绒设备，对单晶硅片进行制绒处理，形成金字塔绒面；
第二步：采用管式高温扩散技术，对硅基体掺硼制备PN结；
第三步：激光掺杂技术，对电池正面需金属化下方进行重掺杂；
第四步：前氧化，搭配碱抛光技术，对激光区域热氧化处理，提升激光区域抗碱腐蚀能力；
第五步：碱抛光，抛光去除硅片边缘PN结及表面缺陷,使背表面平整；
第六步：使用ALD技术，先在硅片背表面沉积5nm-10nm氧化铝薄膜，然后再在三氧化二铝薄膜表面沉积80nm—110nm氮化硅薄膜，制作电池片背面钝化膜层；
第七步：使用PECVD技术，在硅片正表面沉积70-90nm氮化硅薄膜，制作电池片正面钝化膜层；
第八步：使用丝网印刷技术，制备电池片的正电极，背电极及背场；
第九步：使用高温烧结技术，使金属与硅之间形成良好的欧姆接触，电注入退火；
第十步：测试分选电池片的电性能。
实施例和对比例采用的硅片参数完全一致。且实施例和对比例采用电池片的加工方法除了第八步的激光开槽结构存在差异外，其余加工步骤均完全相同。实施例和对比例的电性能对比如表一，本发明PERC双面电池背激光图形对电池电性能表现为，开路电压、短路电流及FF提升，对电池效率效率提升。
表一、实施例和对比例的电性能对比如
Claims (3)
1.一种PERC双面电池背膜优化工艺，其特征在于，包括如下步骤：
步骤1、制绒：采用槽式制绒设备，对单晶硅片进行制绒处理，形成金字塔绒面；
步骤2、扩散：采用管式高温扩散技术，对硅基体掺硼制备PN结；
步骤3、激光掺杂：对电池正面需金属化下方进行重掺杂；
步骤4、：前氧化：搭配碱抛光技术，对激光区域热氧化处理，提升激光区域抗碱腐蚀能力；
步骤5、：碱抛光：抛光去除硅片边缘PN结及表面缺陷,使背表面平整；
步骤6、制作电池片背面钝化膜层：使用PECVD技术，在硅片背表面沉积氧化铝薄膜，然后再在三氧化二铝薄膜表面沉积氮化硅薄膜，氮化硅薄膜包括4层不同折射率的氮化硅膜层，4层氮化硅膜层的折射率为高中中低排布，其中底层为高折射率；
步骤7、制作电池片正面钝化膜层；
步骤8：使用丝网印刷技术，制备电池片的正电极，背电极及背场；
步骤9、退火：使用高温烧结技术，使金属与硅之间形成良好的欧姆接触，电注入退火；
步骤10、测试分选电池片的电性能。
2.根据权利要求1所述的一种PERC双面电池背膜优化工艺，其特征在于，步骤6中，在硅片背表面沉积10nm-14nm氧化铝薄膜，然后再在三氧化二铝薄膜表面沉积70nm—80nm氮化硅薄膜。
3.根据权利要求1所述的一种PERC双面电池背膜优化工艺，其特征在于，步骤7中，使用PECVD技术，在硅片正表面沉积70-80nm氮化硅薄膜。
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