CN112635360A - 一种降低晶圆上形成凝结物的方法 - Google Patents

一种降低晶圆上形成凝结物的方法 Download PDF

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CN112635360A
CN112635360A CN202011482432.2A CN202011482432A CN112635360A CN 112635360 A CN112635360 A CN 112635360A CN 202011482432 A CN202011482432 A CN 202011482432A CN 112635360 A CN112635360 A CN 112635360A
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wafer
efem
humidity
foup
transfer box
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欧少敏
冯大贵
吴长明
曹春生
阚杰
石生宝
江扬帆
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Hua Hong Semiconductor Wuxi Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67769—Storage means

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Abstract

本发明提供一种降低晶圆上形成凝结物的方法，至少包括：晶圆在真空腔中进行作业；将作业后的晶圆从真空腔中传送至负载锁定腔中进行真空大气转换；将晶圆从负载锁定腔传送至EFEM中，其中EFEM中设有温度湿度控制器；当晶圆进入EFEM中时，EFEM中的湿度为25％～30％；将晶圆从EFEM中传送至与EFEM对接的晶圆传送盒中，晶圆传送盒中的湿度与EFEM中的湿度相同。在EFEM中加装温湿度控制器，湿度从40％以上下降到25～30％左右并且精准控制，不受洁净室环境影响；晶圆出腔体后传送过程中及回到晶圆传送盒后整个环境保持恒温恒湿，由于晶圆传送盒内湿度降低，在晶圆传送盒内晶圆上不再产生凝结物，提高产品良率。

Description

一种降低晶圆上形成凝结物的方法
技术领域
本发明涉及半导体技术领域，特别是涉及降低晶圆上形成凝结物的方法。
背景技术
有些机台没有缓冲装置(buffer)，制程后的晶圆直接回到前开式晶圆传送(FOUP)盒和未制程的晶圆在一起，制程后的晶圆的反应副产物释放气体导致未制程的晶圆产生凝结物问题。
凝结物与反应副产物以及空气中的水汽相关，在没有控制设备前端模块(EFEM)空气湿度的情况下，EFEM中的空气湿度为洁净室(FAB)内基准湿度(基准湿度>40％)，较高槽位(slot)的晶圆会产生严重的凝结物。
因此，需要提出一种新的方法来解决上述问题。
发明内容
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种降低晶圆上形成凝结物的方法，用于解决现有技术中制程后的晶圆的反应副产物释放气体导致未制程的晶圆产生凝结物问题。
为实现上述目的及其他相关目的，本发明提供一种降低晶圆上形成凝结物的方法，至少包括：
步骤一、晶圆在真空腔中进行作业；
步骤二、将作业后的晶圆从所述真空腔中传送至负载锁定腔中进行真空大气转换；
步骤三、将所述晶圆从所述负载锁定腔中传送至EFEM中，其中所述EFEM中设有温度湿度控制器；当晶圆进入所述EFEM中时，所述EFEM中的湿度为25％～30％；
步骤四、将晶圆从所述EFEM中传送至与所述EFEM对接的晶圆传送盒中，所述晶圆传送盒中的湿度与步骤三中EFEM中的湿度相同。
优选地，步骤三中所述EFEM中的气压与步骤四中所述晶圆传送盒中的气压为大气压强。
优选地，步骤四中的所述晶圆传送盒中设有上下多层槽位，其中一个所述槽位用于承载一片晶圆。
优选地，步骤四中的所述晶圆传送盒置于负载端。
优选地，步骤四中的所述晶圆传送盒的门与EFEM对接。
优选地，步骤四中的所述晶圆传送盒中的所述槽位中还置有未作业的晶圆，其中未作业的晶圆位于步骤四中作业后的晶圆的上方的槽位。
如上所述，本发明的降低晶圆上形成凝结物的方法，具有以下有益效果：在EFEM中加装温湿度控制器，湿度从40％以上下降到25～30％左右并且精准控制，不受洁净室环境影响；晶圆出腔体后传送过程中及回到FOUP后整个环境保持恒温恒湿，由于FOUP内湿度降低，在FOUP内晶圆上不再产生凝结物，从而提高了产品的良率。
附图说明
图1显示为本发明的降低晶圆上形成凝结物的方法流程图。
具体实施方式
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。
请参阅图1。需要说明的是，本实施例中所提供的图示仅以示意方式说明本发明的基本构想，遂图式中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的型态、数量及比例可为一种随意的改变，且其组件布局型态也可能更为复杂。
本发明提供一种降低晶圆上形成凝结物的方法，如图1所示，图1显示为本发明的降低晶圆上形成凝结物的方法流程图，该方法至少包括以下步骤：
步骤一、晶圆在真空腔中进行作业；该步骤一中将晶圆传送至真空腔(ProcessChamber)中进行作业(Process)；
步骤二、将作业后的晶圆从所述真空腔传送至负载锁定腔中进行真空大气转换；也就是说，步骤二中将步骤一中的作业后的晶圆从所述真空腔(Process Chamber)传送至负载锁定腔(Load lock)中进行真空大气转换；
步骤三、将所述晶圆从所述负载锁定腔中传送至EFEM中，其中所述EFEM中设有温度湿度控制器；当晶圆进入所述EFEM中时，所述EFEM中的湿度为25％～30％；也就是说，该步骤三中将负载锁定腔(Load lock)中的晶圆传送至所述EFEM(控制设备前端模块)中，所述EFEM(控制设备前端模块)中设有所述温度湿度控制器，用于控制该EFEM(控制设备前端模块)中的的温度和湿度，当晶圆从所述负载锁定腔中传送至EFEM中时，所述EFEM中的湿度为25％～30％，所述EFEM中的环境保持恒温恒湿。
步骤四、将晶圆从所述EFEM中传送至与所述EFEM对接的晶圆传送盒中，所述晶圆传送盒中的湿度与步骤三中EFEM中的湿度相同。也就是说，该步骤中的所述晶圆传送盒(FOUP)中的温度和湿度与所述EFEM中的温度和湿度相同，因此从所述EFEM进入所述晶圆传送盒中的晶圆由于FOUP内湿度较传统的FOUP中的湿度降低，在FOUP内晶圆上不再产生凝结物。
本发明进一步地，本实施例的步骤三中所述EFEM中的气压与步骤四中所述晶圆传送盒中的气压为大气压强。
本发明进一步地，本实施例的步骤四中的所述晶圆传送盒中设有上下多层槽位，其中一个所述槽位用于承载一片晶圆。
本发明进一步地，本实施例的步骤四中的所述晶圆传送盒置于负载端。本发明进一步地，本实施例的步骤四中的所述晶圆传送盒的门与EFEM对接。
本发明进一步地，本实施例的步骤四中的所述晶圆传送盒中的所述槽位中还置有未作业的晶圆，其中未作业的晶圆位于步骤四中作业后的晶圆的上方的槽位。
也就是说，将晶圆传送盒(FOUP)置于负载端(load lock)，并且所述晶圆传送盒的门与所述EFEM对接，所述晶圆传送盒与所述EFEM中二者温度湿度环境相同；本实施例中当作业后的所述晶圆从EFEM进入所述晶圆传送盒中，作业后的晶圆置于未作业的晶圆的下方槽位，在其他实施例中作业后的晶圆也可以置于未作业的晶圆的上方槽位。由于FOUP中的湿度较传送晶圆传送盒中湿度降低，因此作业后的晶圆的反应副产物中的CF与所述晶圆传送盒中的空气中的水汽以及其他物质，以及与晶圆上的硅反应产生凝结物的几率下降。
综上所述，在EFEM中加装温湿度控制器，湿度从40％以上下降到25～30％左右并且精准控制，不受洁净室环境影响；晶圆出腔体后传送过程中及回到FOUP后整个环境保持恒温恒湿，由于FOUP内湿度降低，在FOUP内晶圆上不再产生凝结物，从而提高了产品的良率。所以，本发明有效克服了现有技术中的种种缺点而具高度产业利用价值。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。

Claims (6)

1.一种降低晶圆上形成凝结物的方法，其特征在于，至少包括：
步骤一、晶圆在真空腔中进行作业；
步骤二、将作业后的晶圆从所述真空腔中传送至负载锁定腔中进行真空大气转换；
步骤三、将所述晶圆从所述负载锁定腔传送至EFEM中，其中所述EFEM中设有温度湿度控制器；当晶圆进入所述EFEM中时，所述EFEM中的湿度为25％～30％；
步骤四、将晶圆从所述EFEM中传送至与所述EFEM对接的晶圆传送盒中，所述晶圆传送盒中的湿度与步骤三中EFEM中的湿度相同。
2.根据权利要求1所述的降低晶圆上形成凝结物的方法，其特征在于：步骤三中所述EFEM中的气压与步骤四中所述晶圆传送盒中的气压为大气压强。
3.根据权利要求2所述的降低晶圆上形成凝结物的方法，其特征在于：步骤四中的所述晶圆传送盒中设有上下多层槽位，其中一个所述槽位用于承载一片晶圆。
4.根据权利要求3所述的降低晶圆上形成凝结物的方法，其特征在于：步骤四中的所述晶圆传送盒置于负载端。
5.根据权利要求4所述的降低晶圆上形成凝结物的方法，其特征在于：步骤四中的所述晶圆传送盒的门与EFEM对接。
6.根据权利要求5所述的降低晶圆上形成凝结物的方法，其特征在于：步骤四中的所述晶圆传送盒中的所述槽位中还置有未作业的晶圆，其中未作业的晶圆位于步骤四中作业后的晶圆的上方的槽位。
CN202011482432.2A 2020-12-16 2020-12-16 一种降低晶圆上形成凝结物的方法 Pending CN112635360A (zh)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200410305A (en) * 2002-11-29 2004-06-16 Samsung Electronics Co Ltd Substrate processing apparatus and method of processing substrate while controlling for contamination in substrate transfer module
CN107785239A (zh) * 2016-08-24 2018-03-09 台湾积体电路制造股份有限公司 半导体结构的形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200410305A (en) * 2002-11-29 2004-06-16 Samsung Electronics Co Ltd Substrate processing apparatus and method of processing substrate while controlling for contamination in substrate transfer module
CN107785239A (zh) * 2016-08-24 2018-03-09 台湾积体电路制造股份有限公司 半导体结构的形成方法

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Application publication date: 20210409