CN112615246B - Main oscillation power amplifier based on graphene - Google Patents
Main oscillation power amplifier based on graphene Download PDFInfo
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- CN112615246B CN112615246B CN202011477010.6A CN202011477010A CN112615246B CN 112615246 B CN112615246 B CN 112615246B CN 202011477010 A CN202011477010 A CN 202011477010A CN 112615246 B CN112615246 B CN 112615246B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/1301—Stabilisation of laser output parameters, e.g. frequency or amplitude in optical amplifiers
- H01S3/13013—Stabilisation of laser output parameters, e.g. frequency or amplitude in optical amplifiers by controlling the optical pumping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/041—Arrangements for thermal management for gas lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/07—Construction or shape of active medium consisting of a plurality of parts, e.g. segments
- H01S3/073—Gas lasers comprising separate discharge sections in one cavity, e.g. hybrid lasers
- H01S3/076—Folded-path lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/083—Ring lasers
- H01S3/0835—Gas ring lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/131—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
- H01S3/134—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation in gas lasers
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Abstract
The application discloses a graphene-based master oscillation power amplifier, which comprises a master oscillation laser, a first beam expanding collimator, a transmission type graphene optical isolator, a first amplifier, a reflector, a second beam expanding collimator, a reflection type graphene optical isolator and a second amplifier; the transmission type graphene optical isolator comprises a first substrate and a first graphene film positioned on the front surface or the back surface of the first substrate; the reflective graphene optical isolator comprises a second substrate and a second graphene film positioned on the front surface of the second substrate; the diameters of the first graphene film and the second graphene film are larger than the diameter of incident laser, and the front surface of the first substrate and the front surface of the second substrate are respectively the surface facing the first beam expanding and collimating device and the surface facing the second beam expanding and collimating device. The transmission-type graphene optical isolator and the reflection-type graphene optical isolator have the capability of inhibiting small-signal noise light and high-power laser from passing through without loss, and the laser power stability of the main oscillation power amplifier can be effectively ensured.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a graphene-based main oscillation power amplifier.
Background
High repetition frequency, narrow pulse width, high power CO2Laser cannot be directly generated by a single laser at the present stage, and a technical approach of a Master Oscillator Power-Amplifier (MOPA for short) is mainly adopted, that is, the Master Oscillator laser with high repetition frequency and narrow pulse width is obtained by performing Power amplification through a multi-stage Amplifier.
Isolation of these noise lights is required because of severe interference with the normal operation of the master oscillator laser and the amplifier due to superradiation of the amplifier, back reflection and scattering of various optical elements inserted in the optical path, light leakage due to the finite extinction ratio of various electro-optical devices, and the like. For generating long-wave infrared band CO2Main oscillation power amplifier of laser currently adopts SF6Gas separators or hot CO2Gas isolators are used for isolation, however, SF6Gas isolator and hot CO2The gas isolator is limited by the energy level characteristic of the isolation gas, has the defects of high insertion loss, long energy level relaxation time and the like, has poor inhibition effect on small-signal noise light, and influences the laser power stability.
Therefore, how to solve the above technical problems should be a great concern to those skilled in the art.
Disclosure of Invention
The utility model aims at providing a master oscillator power amplifier based on graphite alkene to strengthen the elimination effect to the noise light, promote laser power.
In order to solve the technical problem, the application provides a graphene-based master oscillation power amplifier, which comprises a master oscillation laser, a first beam expanding collimator, a transmission type graphene optical isolator, a first amplifier, a reflector, a second beam expanding collimator, a reflection type graphene optical isolator and a second amplifier;
the transmission type graphene optical isolator comprises a first substrate and a first graphene film positioned on the front surface or the back surface of the first substrate;
the reflective graphene optical isolator comprises a second substrate and a second graphene film positioned on the front surface of the second substrate;
the diameters of the first graphene film and the second graphene film are larger than the diameter of incident laser, and the front surface of the first substrate and the front surface of the second substrate are respectively the surface facing the first beam expanding and collimating device and the surface facing the second beam expanding and collimating device.
Optionally, the method further includes:
and the first heat dissipation ring is positioned at the outer edge of the first graphene film.
Optionally, the method further includes:
and the antireflection film is positioned on the surface of the first substrate.
Optionally, the method further includes:
a reflective film between the second substrate and the second graphene thin film.
Optionally, the method further includes:
and the second heat dissipation ring is positioned at the outer edge of the second graphene film.
Optionally, the first heat dissipation ring and the second heat dissipation ring are both red copper heat dissipation rings.
Optionally, the method further includes:
and the heat dissipation layer is positioned on the back surface of the second substrate.
Optionally, the method further includes:
and the cooling pipeline is positioned on the surface of the heat dissipation layer or embedded in the heat dissipation layer and is used for circulating cooling liquid.
Optionally, the first amplifier and the second amplifier are any one of the following:
axial flow laser amplifier, cross flow laser amplifier, slab laser amplifier.
Optionally, the first substrate and the second substrate are both any one of the following:
zinc selenide substrates, quartz substrates, calcium fluoride substrates.
The application provides a graphene-based master oscillation power amplifier, which comprises a master oscillation laser, a first beam expanding collimating device, a transmission type graphene optical isolator, a first amplifier, a reflector, a second beam expanding collimating device, a reflection type graphene optical isolator and a second amplifier; the transmission type graphene optical isolator comprises a first substrate and a first graphene film positioned on the front surface or the back surface of the first substrate; the reflective graphene optical isolator comprises a second substrate and a second graphene film positioned on the front surface of the second substrate; the diameters of the first graphene film and the second graphene film are larger than the diameter of incident laser, and the front surface of the first substrate and the front surface of the second substrate are respectively the surface facing the first beam expanding and collimating device and the surface facing the second beam expanding and collimating device.
Therefore, the isolators in the graphene-based master oscillator power amplifier are respectively a transmission-type graphene optical isolator and a reflection-type graphene optical isolator, a first graphene film and a second graphene film are respectively arranged in the two isolators, when small-signal noise light irradiates on the first graphene film and the second graphene film, graphene electrons on a valence band are excited to a conduction band after absorbing photon energy, so that small-signal noise light is inhibited, further, when the incident laser power is large enough, the graphene electrons are continuously excited to the conduction band by a source, so that sub-bands of photon energy corresponding to the valence band and the conduction band are completely occupied by electrons and holes, interband transition is blocked, the first graphene film and the second graphene film reach a conduction state, so that high-power incident laser passes through without loss, and then the heat carrier energy is reduced to a balance state, the graphene electrons in the valence band are redistributed to a low-energy state, and the state with high energy is occupied by the holes, so that the relaxation time of the upper energy levels of the first graphene film and the second graphene film is short, and the upper energy levels of the first graphene film and the second graphene film are rapidly recovered to an isolation state from a conduction state, namely the first graphene film and the second graphene film have the capacity of inhibiting small-signal noise light and enabling high-power laser to pass through without loss, and the laser power stability of the main oscillation power amplifier can be effectively guaranteed.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a graphene-based main oscillation power amplifier according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a transmissive graphene optical isolator provided in an embodiment of the present application;
fig. 3 is a schematic structural diagram of a reflective graphene optical isolator provided in an embodiment of the present application.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background section, for the generation of long-wave infrared band CO2Main oscillation power amplifier of laser currently adopts SF6Gas separators or hot CO2Gas isolators are used for isolation, however, SF6Gas isolator and hot CO2The gas isolator is limited by the energy level characteristic of the isolated gas, has the defects of high insertion loss, long energy level relaxation time and the like, and influences the laser power stability.
In view of the above, the present application provides a graphene-based master oscillator power amplifier, please refer to fig. 1, where fig. 1 is a schematic structural diagram of a graphene-based master oscillator power amplifier according to an embodiment of the present application, and the method includes:
the system comprises a main oscillation laser 1, a first beam expanding collimator 2, a transmission type graphene optical isolator 3, a first amplifier 4, a reflector 5, a second beam expanding collimator 6, a reflection type graphene optical isolator 7 and a second amplifier 8;
the transmissive graphene optical isolator 3 comprises a first substrate 31, a first graphene thin film 32 located on the front surface of the first substrate 31 or on the back surface of the first substrate 31;
the reflective graphene optical isolator 7 comprises a second substrate 71, and a second graphene thin film 72 positioned on the front surface of the second substrate 71;
the diameters of the first graphene film 32 and the second graphene film 72 are larger than the diameter of incident laser light, and the front surfaces of the first substrate 31 and the second substrate 71 are the surface facing the first beam expanding and collimating device 2 and the surface facing the second beam expanding and collimating device 6, respectively.
The master oscillator laser 1 is used for outputting CO with high repetition frequency, narrow pulse width and low power2Pulsed seed light, for a master oscillator power amplifier generating far infrared band laser, the master oscillator laser 1 may empty the rf waveguide conductive optical cavity with CO2A laser; the first beam expanding and collimating device 2 and the second beam expanding and collimating device 6 have the functions of expanding and collimating beams and are used for converting the divergence angle and the beam diameter of a light beam so as to ensure that the light beam is matched with the gain spaces of the first amplifier 4 and the second amplifier 8; the first amplifier 4 is used for pre-amplifying the power of the seed light; the second amplifier 8 is used for performing power main amplification on the pre-amplified seed light; the transmission type graphene optical isolator 3 inhibits small-signal noise light between the main oscillation laser 1 and the first amplifier 4; the reflective graphene optical isolator 7 suppresses small-signal noise light between the first amplifier 4 and the second amplifier 8.
Optionally, the first amplifier 4 and the second amplifier 8 may be any one of:
axial flow laser amplifier, cross flow laser amplifier, slab laser amplifier.
In particular, for a master oscillator power amplifier generating a far infrared band laser, the first amplifier 4 may be a radio frequency pumped slab CO2A laser amplifier; the second amplifier 8 may be a fast axial CO2And a laser amplifier.
The first beam expanding and collimating device 2 and the second beam expanding and collimating device 6 adopt a telescope structure and are formed by combining lenses made of high-transmittance materials, and the specific high-transmittance materials are selected according to laser wave bands. For example, for a far infrared band laser, the high transmittance material may be zinc selenide.
The reflector 5 is a reflector 5 coated with a high reflective film 73, and the substrate material may be gallium arsenide.
In the present application, the number of layers of the first graphene film 32 is not specifically limited, and the transmittance of the small-signal noise light per one more graphene film is multiplied by 97.7% according to the requirement for the transmittance of the small-signal noise light. For example, the number of layers of the first graphene film 32 may be 60, the absorptivity of the small signal noise light is about 75%, the isolation is about 6dB, and the first graphene film is not absorptive after being completely bleached. In a similar way, the number of layers of the second graphene film 72 is not specifically limited in the present application, and is set according to the reflection requirement for small-signal noise light. For example, the number of layers of the second graphene film 72 may be 80, and since the reflective graphene optical isolator 7 is used, incident light passes through the second graphene film 72 twice, the absorptivity of the nonlinear absorption effect of the second graphene film 72 on small-signal noise light is about 98%, the isolation degree is about 16dB, and no absorption effect exists after complete bleaching. When the number of layers of the first graphene film 32 may be 60 and the number of layers of the second graphene film 72 may be 80, the total absorption rate of small-signal noise light is about 99.5%, the total isolation is about 23dB, and CO suppression is satisfied2The application requirement of laser MOPA system noise light.
Transmission-type graphite alkene optical isolator 3 includes first basement 31 and first graphite alkene film 32, and reflection-type graphite alkene optical isolator 7 includes second basement 71 and second graphite alkene film 72, and two optical isolators have simple structure, with low costs, convenient to use's advantage. The first graphene film 32 and the second graphene film 72 may be prepared by a chemical vapor deposition method and then transferred onto the first substrate 31 and the second substrate 71.
Optionally, the first substrate 31 and the second substrate 71 are both any one of the following:
zinc selenide substrates, quartz substrates, calcium fluoride substrates.
Specifically, for a master oscillator power amplifier that generates near-infrared band laser light, the first substrate 31 and the second substrate 71 are quartz substrates; for a master oscillator power amplifier that generates mid-infrared band laser light, the first substrate 31 and the second substrate 71 are calcium fluoride substrates; for the master oscillator power amplifier generating far infrared band laser, the first substrate 31 and the second substrate 71 are zinc selenide substrates, but the present application is not limited thereto specifically, and for the master oscillator power amplifier generating far infrared band laser, the first substrate 31 is also a germanium substrate, and the second substrate 71 is a silicon substrate or a copper substrate, etc.
The purpose of adopting reflective graphite alkene isolator in this application is that the power is higher after the seed light passes through first amplifier 4, provides higher isolation for the light beam after enlargeing to and promote the security of radiating efficiency and assurance second graphite alkene film 72.
The utility model discloses an isolator among graphite alkene based master oscillator power amplifier is transmission-type graphite alkene optical isolator 3 respectively, and reflection-type graphite alkene optical isolator 7, be provided with first graphite alkene film 32, second graphite alkene film 72 in two isolators respectively, when small signal noise light shines on first graphite alkene film 32, second graphite alkene film 72, graphite alkene electron on the valence band is aroused on the conduction band after absorbing photon energy, thereby restrain small signal noise light, furthermore, when incident laser power is big enough, graphite alkene electron is constantly aroused the conduction band by the source, make the sub-band of valence band and the photon energy that the conduction band corresponds occupy by electron and hole completely, interband is jumped and is broken, first graphite alkene film 32, second graphite alkene film 72 reach the on-state, make the nearly lossless of powerful incident laser pass through, hot carrier energy reduces to the balanced state afterwards, the graphene electrons in the valence band are redistributed to a low-energy state, and the high-energy state is occupied by the holes, so that the relaxation time of the upper energy levels of the first graphene film 32 and the second graphene film 72 is short, and the upper energy levels are rapidly recovered to an isolated state from a conduction state, namely the first graphene film 32 and the second graphene film 72 have the capacity of inhibiting small-signal noise light and high-power laser from passing through without loss, and the laser power stability of the main oscillation power amplifier can be effectively ensured.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a transmissive graphene optical isolator 3 according to an embodiment of the present disclosure. On the basis of the above embodiment, the graphene-based master oscillator power amplifier further includes:
a first heat dissipation ring 33 located at an outer edge of the first graphene film 32.
The inner diameter of the first heat dissipation ring 33 is equal to the diameter of the first graphene film 32, so as to accelerate the heat dissipation of the first graphene film 32.
Preferably, the graphene-based master oscillator power amplifier further comprises: the antireflection film 34 on the surface of the first substrate 31 is composed of multiple layers of dielectric antireflection films 34, and can increase the transmittance of laser on the first substrate 31 and play a role in supporting and attaching the first graphene thin film 32. Antireflection films 34 are provided on the front and back surfaces of first substrate 31.
It is understood that the antireflection film 34 corresponds to the seed light, for example, when the seed light is 10.6 μm seed light, the antireflection film 34 has an antireflection effect on 10.6 μm laser light.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a reflective graphene optical isolator 7 according to an embodiment of the present disclosure. On the basis of the above embodiment, the graphene-based master oscillator power amplifier further includes:
the reflective film 73 between the second substrate 71 and the second graphene thin film 72 is made of a multi-layer dielectric or a metal high-reflectivity film to increase the reflectivity of the laser.
It is understood that the reflective film 73 corresponds to the seed light, and for example, when the seed light is 10.6 μm seed light, the reflective film 73 has a high reflection effect on 10.6 μm laser light.
Preferably, the graphene-based master oscillator power amplifier further comprises: and a second heat dissipation ring 74 located at the outer edge of the second graphene film 72.
The inner diameter of the second heat dissipation ring 74 is equal to the diameter of the second graphene film 72, so as to accelerate the heat dissipation of the second graphene film 72.
Optionally, the first heat dissipation ring 33 and the second heat dissipation ring 74 are both red copper heat dissipation rings. It should be noted that the first heat dissipating ring 33 and the second heat dissipating ring 74 may also be made of other metal materials having high thermal conductivity.
Preferably, the graphene-based master oscillator power amplifier further comprises: and a heat dissipation layer 75 on the back of the second substrate 71 to further increase the heat dissipation speed.
The material of the heat dissipation layer 75 is not particularly limited in this application, and is made of a high thermal conductivity metal or alloy material, such as copper.
Further, the graphene-based master oscillator power amplifier further comprises:
and a cooling pipe 76 on the surface of the heat dissipation layer 75 or embedded in the heat dissipation layer 75 for circulating a cooling liquid.
The material of the cooling pipe 76 can be soft or hard plastic, one end is an inlet which needs to be communicated with the cooling liquid, and the other end is an outlet. The cooling fluid may be water.
The cooling channels 76 may be distributed in an S-shape or may be spirally wound, as shown in FIG. 3. It will be appreciated that the cooling pipes 76 are spirally wound to avoid excessive curvature and rough inner wall, so as to ensure smooth flow and sufficient flow of the cooling liquid in the pipes, thereby achieving good heat dissipation effect.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The graphene-based master oscillator power amplifier provided by the present application is described in detail above. The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.
Claims (10)
1. A graphene-based main oscillation power amplifier is characterized by comprising a main oscillation laser, a first beam expanding collimating device, a transmission type graphene optical isolator, a first amplifier, a reflector, a second beam expanding collimating device, a reflection type graphene optical isolator and a second amplifier;
the transmission type graphene optical isolator comprises a first substrate and a first graphene film positioned on the front surface or the back surface of the first substrate;
the reflective graphene optical isolator comprises a second substrate and a second graphene film positioned on the front surface of the second substrate;
the diameters of the first graphene film and the second graphene film are larger than the diameter of incident laser, the front surface of the first substrate is a surface facing the first beam expanding and collimating device, and the front surface of the second substrate is a surface facing the second beam expanding and collimating device.
2. The graphene-based master oscillator power amplifier of claim 1, further comprising:
and the first heat dissipation ring is positioned at the outer edge of the first graphene film.
3. The graphene-based master oscillator power amplifier of claim 1, further comprising:
and the antireflection film is positioned on the surface of the first substrate.
4. The graphene-based master oscillator power amplifier of claim 1, further comprising:
a reflective film between the second substrate and the second graphene thin film.
5. The graphene-based master oscillator power amplifier of claim 2, further comprising:
and the second heat dissipation ring is positioned at the outer edge of the second graphene film.
6. The graphene-based master oscillator power amplifier of claim 5, wherein the first and second heat-dissipating rings are both red copper heat-dissipating rings.
7. The graphene-based master oscillator power amplifier according to any one of claims 1 to 6, further comprising:
and the heat dissipation layer is positioned on the back surface of the second substrate.
8. The graphene-based master oscillator power amplifier of claim 7, further comprising:
and the cooling pipeline is positioned on the surface of the heat dissipation layer or embedded in the heat dissipation layer and is used for circulating cooling liquid.
9. The graphene-based master oscillator power amplifier of claim 8, wherein the first amplifier and the second amplifier are either:
axial flow laser amplifier, cross flow laser amplifier, slab laser amplifier.
10. The graphene-based master oscillator power amplifier of claim 9, wherein the first and second substrates are any one of:
zinc selenide substrates, quartz substrates, calcium fluoride substrates.
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| CN114204996A (en) * | 2021-11-10 | 2022-03-18 | 中国科学院长春光学精密机械与物理研究所 | One-way photoacoustic communication system and communication method thereof |
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| CN111817116A (en) * | 2020-07-20 | 2020-10-23 | 中国科学院长春光学精密机械与物理研究所 | Long-wave carbon dioxide laser isolation device |
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| JP5205602B2 (en) * | 2009-09-24 | 2013-06-05 | 株式会社エス・エム・エムプレシジョン | Inline optical isolator |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104362505A (en) * | 2014-11-19 | 2015-02-18 | 广东高聚激光有限公司 | Peak power intensifier and high peak power MOPA fiber laser |
| CN105161968A (en) * | 2015-09-22 | 2015-12-16 | 电子科技大学 | Graphene-based mid-infrared dual-wavelength co-repetition frequency pulsed fiber laser |
| CN106226970A (en) * | 2016-08-09 | 2016-12-14 | 深圳大学 | A kind of full photo threshold device based on two-dimensional material wavelength convert function and its preparation method and application |
| CN107248608A (en) * | 2017-06-30 | 2017-10-13 | 西安电子科技大学 | Double-deck microstrip multi-path power divider based on graphene film |
| CN111817116A (en) * | 2020-07-20 | 2020-10-23 | 中国科学院长春光学精密机械与物理研究所 | Long-wave carbon dioxide laser isolation device |
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