CN112605535A - Wafer, wafer scribing method and core particles - Google Patents

Wafer, wafer scribing method and core particles Download PDF

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Publication number
CN112605535A
CN112605535A CN202011301311.3A CN202011301311A CN112605535A CN 112605535 A CN112605535 A CN 112605535A CN 202011301311 A CN202011301311 A CN 202011301311A CN 112605535 A CN112605535 A CN 112605535A
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China
Prior art keywords
wafer
sidewall
substrate
core particle
core
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CN202011301311.3A
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Chinese (zh)
Inventor
宋迪
高佳
汤国梁
金超
张东炎
王笃祥
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Tianjin Sanan Optoelectronics Co Ltd
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Tianjin Sanan Optoelectronics Co Ltd
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Priority to CN202011301311.3A priority Critical patent/CN112605535A/en
Publication of CN112605535A publication Critical patent/CN112605535A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Abstract

The invention provides a wafer, a wafer scribing method and a core grain, wherein in the scribing process, an included angle is formed between a laser beam and a third direction vertical to a wafer substrate by adjusting the angle of a reflector in a scribing device, so that the laser beam is obliquely irradiated to a cutting channel arranged on the surface of the wafer from the third direction, and therefore, in four side walls around the core grain generated by scribing, the adjacent two side walls have the same height and the opposite two side walls have different heights, and in the subsequent sorting and die bonding stages, when the core grain is placed in a specific area by a suction nozzle, the difficulty of releasing the suction nozzle is reduced, so that the problem that the core grain is adhered to the suction nozzle is solved. In addition, the invention can reduce the difficulty of the nozzle release in the subsequent separation and die bonding stages and improve the problem of the adhesion of the core particles to the nozzle only by finely adjusting the angle of the reflecting mirror in the scribing device, and has simple operation and stronger practicability.

Description

Wafer, wafer scribing method and core particles
Technical Field
The invention belongs to the technical field of semiconductor device preparation, and particularly relates to a wafer, a wafer scribing method and a core particle.
Background
The wafer is a basic raw material for manufacturing semiconductor devices, and can be widely applied to various electronic devices. The wafer scribing is a key process for obtaining single core particles and performing subsequent sorting, testing, packaging and the like, and mainly comprises scribing with a scribing cutter and laser scribing. For laser scribing, laser beams vertically irradiate to a cutting channel on the surface of a wafer in a non-contact manner, so that the irradiated area is locally melted and vaporized, and the purposes of removing materials and realizing preliminary separation of the wafer are achieved. However, the wafer will melt back during the laser scribing process, and the laser beam makes the melted back accumulation on both sides of the scratch the same, i.e. the four sidewalls around the core grain have the same height. The core grain structure causes the problems that the core grains are adhered to the suction nozzle and the suction nozzle is not easy to release in the subsequent sorting and die bonding stages, and simultaneously, the quality of the wafer is influenced.
Disclosure of Invention
In view of the above disadvantages of the prior art, the present invention provides a wafer, a wafer scribing method and a core particle, wherein an included angle is formed between a laser beam and a third direction perpendicular to the surface of the wafer during scribing, so that the laser beam is obliquely irradiated onto the surface of the wafer from the third direction, and adjacent two side walls among four side walls around the scribed core particle have the same height and different heights from each other, thereby improving the problem of nozzle adhesion generated during the subsequent sorting and die bonding of the wafer.
In order to achieve the above and other related objects, the present invention provides a wafer, a wafer dicing method and a core, wherein the wafer dicing method comprises the steps of:
providing a wafer, wherein the surface of the wafer is provided with a plurality of first cutting channels and second cutting channels which are distributed in a staggered manner in a first direction and a second direction which are parallel to the surface of the substrate;
scribing the wafer, and scribing the wafer along the first cutting channel and the second cutting channel by using laser beams, so as to form a plurality of grooves staggered along the first direction and the second direction on the surface of the wafer;
and the laser beam and a third direction perpendicular to the substrate form an included angle, so that the laser beam obliquely irradiates the surface of the wafer from the third direction.
Optionally, the first cutting lanes and the second cutting lanes are vertically staggered.
Optionally, the depth of the trench is between 38 μm and 46 μm.
Optionally, a width of the trench is gradually reduced along an irradiation direction of the laser beam, wherein the width of the trench is less than or equal to 12 μm.
Optionally, the laser beam includes an angle of 5 ° to 45 ° with a third direction perpendicular to the substrate.
Optionally, the trench includes a first sidewall and a second sidewall opposite to the first sidewall, the first sidewall is inclined from the third direction, and the inclined direction of the first sidewall is the same as the inclined direction of the laser beam, and the second sidewall is perpendicular to the substrate surface.
Optionally, the height of the first sidewall of the trench is less than the height of the second sidewall.
Optionally, the wafer includes a growth substrate and an epitaxial layer formed on a surface of the growth substrate, and the first dicing street and the second dicing street are located on a surface of the epitaxial layer.
The invention also provides a wafer which comprises a plurality of core particles obtained by scribing and a plurality of grooves positioned among the core particles, wherein the grooves are arranged in a staggered manner in a first direction and a second direction which are parallel to the surface of the substrate, each groove comprises a first side wall and a second side wall opposite to the first side wall, and the height of the first side wall is smaller than that of the second side wall.
Optionally, the width of the trench between adjacent core particles is less than or equal to 12 μm.
Optionally, the depth of the trench is between 38 μm and 46 μm.
Optionally, the first sidewall of the trench is inclined from a third direction perpendicular to the surface of the wafer, and forms an included angle with the third direction, and the second sidewall is perpendicular to the surface of the substrate.
Optionally, the angle between the first side wall and the third direction is between 5 ° and 45 °.
The invention also provides a core particle, which comprises a substrate and an epitaxial layer formed on the substrate; the substrate and the epitaxial layer form four side walls of the core grain, wherein two opposite side walls in the core grain have different heights.
Optionally, the first sidewall of the core particle is opposite to the second sidewall of the core particle, the third sidewall of the core particle is opposite to the fourth sidewall of the core particle, the first sidewall of the core particle has a height lower than the second sidewall of the core particle, and the third sidewall of the core particle has a height lower than the fourth sidewall of the core particle.
Optionally, the first sidewall and the third sidewall of the core particle are inclined from a third direction perpendicular to the surface of the wafer, and form an included angle with the third direction, and the second sidewall and the fourth sidewall are perpendicular to the surface of the substrate.
Optionally, the included angle between the first side wall and the third direction is between 5 ° and 45 °.
Optionally, in the core particle, adjacent first and third sidewalls have the same height, and adjacent second and fourth sidewalls have the same height.
The wafer, the scribing method and the core grain have the following beneficial effects:
the wafer is scribed by adopting a laser scribing technology, and the laser beam has an included angle with a third direction perpendicular to the surface of the wafer by adjusting the incident angle of the laser beam, namely the laser beam is inclined along the third direction perpendicular to the surface of the wafer, for example, the included angle with the third direction is 20 degrees. The area irradiated by the inclined laser beam forms a groove, the groove is locally melted and vaporized, and meltback accumulation is generated on two sides of the scratch, so that the heights of two side walls of the groove are inconsistent. Therefore, in four side walls around the core particles generated by scribing, the adjacent two side walls have the same height and the opposite two side walls have different heights, and in the subsequent sorting and die bonding stages, when the suction nozzle is used for placing the core particles in a specific area, the difficulty of the suction nozzle release is reduced, so that the problem that the core particles are adhered to the suction nozzle is solved. In addition, in the wafer, the wafer scribing method and the core grain, the oblique irradiation of the laser beam can be realized by finely adjusting the angle of the reflecting mirror in the scribing device, so that the structure is formed, the difficulty of nozzle release in the sorting and die bonding stages is reduced, the problem of nozzle adhesion of the core grain is solved, the operation is simple, and the practicability is high.
Drawings
Fig. 1a shows an SEM image of a trench obtained by dicing a wafer in the prior art.
Fig. 1b shows an enlarged view of a portion of the trench portion indicated by circle a in fig. 1 a.
Fig. 2 is a schematic flow chart of the wafer dicing method of the present invention.
Fig. 3a shows a radial cross-sectional view of a wafer according to an embodiment of the invention.
Fig. 3b is a top view of a wafer according to an embodiment of the invention.
Fig. 4 is a schematic view illustrating a dicing apparatus according to an embodiment of the present invention.
Fig. 5 is a radial cross-sectional view of a diced wafer according to an embodiment of the invention.
FIG. 6a is a SEM image of a wafer trench after completion of scribing in accordance with one embodiment of the present invention.
Fig. 6B shows a partial enlargement of the groove portion indicated by circle B in fig. 6 a.
Fig. 7 is a radial cross-sectional view of a wafer after completion of scribing in accordance with a second embodiment of the present invention.
Fig. 8 shows an SEM image of a core particle provided in example three of the present invention.
Description of the element reference numerals
1 wafer 23 reflector to be diced
10 preliminary separation of core particles 24 spectroscopes
11 growth substrate 25 focusing mirror
12 epitaxial layer 26 stage
120 wafer front side 210 laser beam
121 first scribe line 100 wafer
122 second cutting street 1000 core grain
1200 first sidewall of trench 1001 core particle
1201 first sidewall of trench 1002 second sidewall of the core particle
1202 second sidewall of trench 1003 third sidewall of core particle
2 dicing apparatus 1004 fourth sidewall of core particle
21 laser A circle A
22 light path box B circle B
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the type, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example one
As described in the background, in the prior art, for laser scribing, a laser beam is perpendicularly irradiated to a scribe line on a wafer surface, as shown in fig. 1a, a plurality of trenches 1200 staggered in a first direction and a second direction are formed on the wafer surface, the trenches 1200 include a first sidewall 1201 and a second sidewall 1202 opposite to the first sidewall, and the first sidewall 1201 and the second sidewall 1202 are both approximately perpendicular to the wafer substrate surface. And the height of the first side wall 1201 is equal to the height of the second side wall 1202, as shown in fig. 1 b.
The present embodiment provides a wafer scribing method, as shown in fig. 2, the wafer scribing method includes the following steps:
step S1: providing a wafer, wherein the surface of the wafer is provided with a plurality of first cutting channels and second cutting channels which are distributed in a staggered manner in a first direction and a second direction which are parallel to the surface of the substrate;
as shown in fig. 3a, a wafer 1 is provided, which may be a wafer die or a wafer grown with an epitaxial layer, and in this embodiment, the wafer grown with an epitaxial layer includes a growth substrate 11 and an epitaxial layer 12, wherein one side of the epitaxial layer 12 is a front surface 120 of the wafer. As an example, the growth substrate 11 of the wafer may be sapphire, silicon carbide, silicon, or the like. As shown in fig. 3b, a plurality of first scribe lines 121 and a plurality of second scribe lines 122 are pre-formed on the upper surface of the epitaxial layer (i.e. the front surface 120 of the wafer), the first scribe lines 121 extend along a first direction, and the second scribe lines 122 extend along a second direction, where the first direction and the second direction are two directions parallel to the surface of the substrate and intersecting with each other. In a preferred embodiment, the first direction and the second direction are perpendicular to each other, as shown in fig. 3b, the first direction may be an X direction in the figure, and the second direction may be a Y direction perpendicular to the X direction. As shown in fig. 3b, at this time, the plurality of first scribe lines 121 and the plurality of second scribe lines 122 are vertically staggered in a cross shape on the front surface 120 of the wafer, and a plurality of uniformly distributed square core particles 10 to be separated are formed on the front surface 120 of the wafer.
Step S2: scribing the wafer, and scribing the wafer along the first cutting channel and the second cutting channel by using laser beams, so as to form a plurality of grooves staggered along the first direction and the second direction on the surface of the wafer; and the laser beam and a third direction perpendicular to the substrate form an included angle, so that the laser beam obliquely irradiates the surface of the wafer from the third direction.
Before dicing the wafer 1, a dicing apparatus is provided, as shown in fig. 4. The scribing apparatus includes, by way of example, a laser 21, a light path box 22, a reflecting mirror 23, a beam splitter 24, a focusing mirror 25, and a stage 26. The reflecting mirror 23, the spectroscope 24 and the focusing mirror 25 are coaxially positioned above the wafer 1 from top to bottom in sequence; the optical path box 22 is coaxially located on one side of the reflecting mirror 23 in the horizontal direction, and the laser 21 is coaxially located above the optical path box 22.
By way of example, the laser 21 is an ultraviolet laser, the wavelength of the laser is 355nm, the laser is a pulse laser, the maximum output power of the laser is 15W, the frequency range of the laser is 20-180kHz, and the speed of processing the LED wafer can reach 600mm/s at most.
As an example, an angle α between a reflective mirror 23 in the scribing apparatus and a horizontal plane is adjusted, so that an angle β is formed between a laser beam 210 emitted from the laser 21 and a third direction perpendicular to the substrate, and the laser beam 210 is obliquely irradiated onto the wafer surface from the third direction, as shown in fig. 5. In a preferred embodiment, the third direction is perpendicular to the plane of the first and second directions, as shown in fig. 5, and the third direction may be a Z direction in the figure. In the prior art, the angle α between the mirror and the horizontal plane is usually 45 °, and in the present embodiment, the angle α between the mirror 23 and the horizontal plane is adjusted to be in the range of 0 ° < α < 90 ° and α ≠ 45 °.
As an example, the size and energy distribution of the laser spot emitted by the laser 21 is confirmed by a spot analyzer. In the prior art, since the laser beam 210 vertically irradiates the scribe line, the laser spot of the laser beam 210 on the wafer surface is generally circular, and the generated energy satisfies the gaussian distribution; in this embodiment, since the laser beam 210 forms an included angle β with a third direction perpendicular to the wafer substrate, the laser beam 210 is obliquely irradiated onto the wafer surface from the third direction, the laser spot of the laser beam 210 on the wafer surface is elliptical, and the generated energy is also deflected, so that the size and energy distribution of the laser spot are determined by the spot analyzer, and preparation is made for the next cutting.
The process of scribing the wafer 1 specifically includes the following steps: s21: placing the wafer 1 to be cut on a table 26; s22: the laser 21 emits a laser beam; s23: the laser beam is reflected and filtered by the light path box 22 to form a single laser beam with good directivity and monochromaticity; s24: the single beam passes through the mirror 23, the propagation direction changes; s25: the single beam enters the spectroscope 24, and is split into multiple beams by the spectroscope, so that the dotting and condensing effect is achieved; s26: the multiple beams finally pass through a focusing lens 25 and form multiple spot focusing on the surface of the wafer; s27: the worktable 26 drives the wafer 1 to move, so that the laser cuts along the first cutting streets 121 and the second cutting streets 122 perpendicular to the first cutting streets 121 of the wafer, and a plurality of grooves 1200 and a plurality of preliminarily separated single core particles 10 shown in fig. 5 are formed on the front surface 120 of the wafer.
As an example, since the angle α between the reflective mirror 23 and the horizontal plane is adjusted, in step S26, as shown in fig. 5, the laser beam 210 has an angle β with a third direction perpendicular to the substrate, so that the laser beam 210 is obliquely irradiated from the third direction to the first scribe lane 121 and the second scribe lane 122 perpendicular to the first scribe lane on the wafer surface, and a spot formed on the wafer surface is elliptical. As an example, the included angle β between the laser beam 210 and the third direction perpendicular to the substrate may be set in a range of 5 ° to 45 °, and preferably, the included angle β is 20 °.
As an example, in step S27, the worktable 26 drives the wafer 1 to move along a first direction, so that the laser cuts along the first cutting streets 121 on the front surface of the wafer; the worktable 26 drives the wafer 1 to move along a second direction perpendicular to the first direction, so that the laser cuts along a plurality of second cutting channels 122 on the front surface of the wafer; finally, a plurality of grooves 1200 and a plurality of preliminarily separated single core particles 10 are formed on the front surface of the wafer 1.
As an example, as shown in fig. 6a, the trench 1200 includes a first sidewall 1201 and a second sidewall 1202 opposite to the first sidewall, the first sidewall 1201 has a same inclination direction as the laser beam 210, and the second sidewall 1202 is perpendicular to the substrate surface, i.e., an included angle between the first sidewall 1201 and the second sidewall 1202 is equal to an included angle β between the laser beam 210 and a third direction perpendicular to the substrate. Due to the oblique irradiation of the laser beam 210 to the cutting street, the energy generated on both sides of the cutting street is not uniform, and the materials on both sides of the cutting street are melted and vaporized to generate different meltback accumulation, i.e. the height of the first sidewall 1201 of the formed trench is smaller than the height of the second sidewall 1202, as shown in fig. 6 b.
As an example, the depth of the trench 1200 is 38 μm to 46 μm, the width of the trench 1200 is gradually reduced in the irradiation direction of the laser beam, and the width of the trench is less than or equal to 12 μm.
The embodiment also provides a wafer 100 diced by the above wafer dicing method, where the wafer 100 includes a plurality of diced core particles 10 and a plurality of trenches 1200 located between the diced core particles 10, the trenches 1200 are staggered in a first direction and a second direction parallel to the substrate surface, the trenches 1200 include first sidewalls 1201 and second sidewalls 1202 opposite to the first sidewalls, and the height of the first sidewalls 1201 is smaller than the height of the second sidewalls 1202.
As an example, as shown in fig. 6a, the first sidewall 1201 of the trench 1200 is inclined from a third direction perpendicular to the wafer surface and is parallel to the irradiation direction of the laser beam 210, that is, an included angle between the first sidewall 1201 and the third direction is also β, and the included angle β may be set in a range of 5 ° to 45 °, and preferably, the included angle β is 20 °.
As an example, in the wafer, the width of the trench 1200 is less than or equal to 12 μm; the depth of the trench 1200 is 38 μm to 46 μm.
As an example, as shown in fig. 6b, in the wafer, the height of the first sidewall 1201 of the trench 1200 is smaller than the height of the second sidewall 1202. Therefore, the core particles are not easy to adhere to the suction nozzle in the subsequent sorting and die bonding stages, and the quality of the wafer is improved.
Example two
The present embodiment also provides a wafer, as shown in fig. 7, the wafer 100 includes a plurality of diced core particles 10 and a plurality of trenches 1200 located between the core particles 10, the trenches 1200 are staggered in a first direction and a second direction parallel to the substrate surface, the trenches 1200 include a first sidewall 1201 and a second sidewall 1202 opposite to the first sidewall, and the height of the first sidewall 1201 is smaller than the height of the second sidewall 1202.
The wafer provided in this embodiment is also obtained by the wafer dicing method according to the first embodiment, in the dicing process, by adjusting the angle of the reflecting mirror 23 in the dicing apparatus 2, the laser beam 210 has an included angle β with a third direction perpendicular to the wafer substrate, so that the laser beam 210 obliquely irradiates the first scribe lane 121 and the second scribe lane 122 on the surface of the wafer from the third direction. Because the laser beam 210 is obliquely irradiated to the cutting street, the energy generated at the two sides of the cutting street is not uniform, and the materials at the two sides of the cutting street are melted and vaporized to generate different meltback accumulation, i.e., the height of the first side wall 1201 of the groove 1200 is smaller than that of the second side wall 1202. The wafer of the present embodiment is the same as the wafer of the first embodiment, and therefore, the description thereof is omitted. The difference is that, as shown in fig. 8, the trench 1200 is further formed in the substrate 11 of the wafer 1, and the depth of the trench 1200 is 38 μm to 46 μm, which is greater than the thickness of the epitaxial layer 12 of the wafer and less than the thickness of the wafer 1.
EXAMPLE III
The present embodiment provides a core particle, as shown in fig. 8, the core particle 1000 is obtained by further dicing the wafer 100 according to the first embodiment or the second embodiment, and the core particle 1000 includes a substrate 11 and an epitaxial layer 12 formed on the substrate; the substrate and the epitaxial layer form four sidewalls of the core grain 1000, wherein two oppositely disposed sidewalls of the core grain have different heights.
By way of example, the core particle 1000 includes four sidewalls: a first sidewall 1001, a second sidewall 1002, a third sidewall 1003, and a fourth sidewall 1004, the first sidewall 1001 of the core pellet being opposite the second sidewall 1002 of the core pellet, and the third sidewall 1003 of the core pellet being opposite the fourth sidewall 1004 of the core pellet.
Illustratively, the first sidewall 1001 of the core particle has a height that is less than the height of the second sidewall 1002 of the core particle, and the third sidewall 1003 of the core particle has a height that is less than the height of the fourth sidewall 1004 of the core particle.
As an example, the first sidewall 1001 and the third sidewall 1003 of the core particle 1000 are inclined from a third direction perpendicular to the wafer surface and are parallel to the irradiation direction of the laser beam 210, that is, the included angle between the first sidewall 1001 and the third sidewall 1003 of the core particle and the third direction is β, and the included angle β may be set in a range of 5 ° to 45 °, and preferably, the included angle β is 20 °.
As an example, in the core particle 1000, adjacent first and third sidewalls 1001 and 1003 have the same height, and adjacent second and fourth sidewalls 1002 and 1004 have the same height. The height of the four side walls of the core grain 1000 is different, so that the difficulty of the suction nozzle releasing is reduced when the suction nozzle is used for placing the core grain in a specific area in the subsequent sorting and die bonding stages, and the problem that the core grain is adhered to the suction nozzle is solved.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (18)

1. A wafer dicing method, comprising the steps of:
providing a wafer, wherein the surface of the wafer is provided with a plurality of first cutting channels and second cutting channels which are distributed in a staggered manner in a first direction and a second direction which are parallel to the surface of the substrate;
scribing the wafer, and scribing the wafer along the first cutting channel and the second cutting channel by using laser beams, so as to form a plurality of grooves staggered along the first direction and the second direction on the surface of the wafer;
and the laser beam and a third direction perpendicular to the substrate form an included angle, so that the laser beam obliquely irradiates the surface of the wafer from the third direction.
2. The wafer dicing method of claim 1, wherein the first scribe lanes and the second scribe lanes are vertically staggered.
3. The wafer dicing method according to claim 1, wherein the depth of the trench is between 38 μm and 46 μm.
4. The wafer dicing method according to claim 1, wherein a width of the trench is gradually reduced in an irradiation direction of the laser beam, wherein the width of the trench is less than or equal to 12 μm.
5. A method for scribing a wafer according to claim 1, wherein the angle between the laser beam and the third direction perpendicular to the substrate is between 5 ° and 45 °.
6. The wafer scribing method according to claim 1 or 5, wherein the trench includes a first sidewall and a second sidewall opposite to the first sidewall, the first sidewall is inclined from the third direction, and the inclined direction of the first sidewall is the same as the inclined direction of the laser beam, and the second sidewall is perpendicular to the substrate surface.
7. The wafer dicing method according to claim 6, wherein a height of the first sidewall of the trench is smaller than a height of the second sidewall.
8. The wafer dicing method of claim 1, wherein the wafer comprises a growth substrate and an epitaxial layer formed on a surface of the growth substrate, and the first scribe line and the second scribe line are located on a surface of the epitaxial layer.
9. A wafer is characterized by comprising a plurality of core particles obtained by scribing and a plurality of grooves positioned among the core particles, wherein the grooves are arranged in a staggered mode in a first direction and a second direction which are parallel to the surface of the substrate, each groove comprises a first side wall and a second side wall opposite to the first side wall, and the height of the first side wall is smaller than that of the second side wall.
10. The wafer of claim 9, wherein the width of the trench between adjacent core grains is less than or equal to 12 μ ι η.
11. The wafer of claim 9, wherein the depth of the trench is between 38 μm and 46 μm.
12. The wafer of claim 9, wherein the first sidewall of the trench is inclined from a third direction perpendicular to the surface of the wafer, and forms an angle with the third direction, and the second sidewall is perpendicular to the surface of the substrate.
13. The wafer of claim 12, wherein an angle between the first sidewall and the third direction is between 5 ° and 45 °.
14. A core particle, comprising a substrate and an epitaxial layer formed on the substrate; the substrate and the epitaxial layer form four side walls of the core grain, wherein two opposite side walls in the core grain have different heights.
15. The core particle of claim 14, wherein the first sidewall of the core particle is opposite the second sidewall of the core particle, the third sidewall of the core particle is opposite the fourth sidewall of the core particle, the first sidewall of the core particle has a height that is less than the height of the second sidewall of the core particle, and the third sidewall of the core particle has a height that is less than the height of the fourth sidewall of the core particle.
16. The core particle of claim 15 wherein said first and third sidewalls of said core particle are inclined from a third direction perpendicular to said wafer surface at an angle to said third direction, said second and fourth sidewalls being perpendicular to said substrate surface.
17. The core particle of claim 16, wherein the first and third sidewalls are angled from 5 ° to 45 ° from the third direction.
18. The core particle of claim 15 wherein adjacent first and third sidewalls have the same height and adjacent second and fourth sidewalls have the same height.
CN202011301311.3A 2020-11-19 2020-11-19 Wafer, wafer scribing method and core particles Pending CN112605535A (en)

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JP2004087663A (en) * 2002-08-26 2004-03-18 Tokyo Seimitsu Co Ltd Dicing equipment and chip manufacturing method
US20130048617A1 (en) * 2011-08-24 2013-02-28 Disco Corporation Hole forming method and laser processing apparatus
CN103706951A (en) * 2012-10-02 2014-04-09 三星钻石工业股份有限公司 Processing method of substrate having patterns
CN104659140A (en) * 2015-03-06 2015-05-27 天津三安光电有限公司 Multijunction solar cell
CN105679885A (en) * 2014-12-04 2016-06-15 株式会社迪思科 Method for manufacturing optical device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004087663A (en) * 2002-08-26 2004-03-18 Tokyo Seimitsu Co Ltd Dicing equipment and chip manufacturing method
US20130048617A1 (en) * 2011-08-24 2013-02-28 Disco Corporation Hole forming method and laser processing apparatus
CN103706951A (en) * 2012-10-02 2014-04-09 三星钻石工业股份有限公司 Processing method of substrate having patterns
CN105679885A (en) * 2014-12-04 2016-06-15 株式会社迪思科 Method for manufacturing optical device
CN104659140A (en) * 2015-03-06 2015-05-27 天津三安光电有限公司 Multijunction solar cell

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Application publication date: 20210406