CN112599711A - Preparation method of OLED device and OLED device - Google Patents
Preparation method of OLED device and OLED device Download PDFInfo
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02079—Cleaning for reclaiming
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
A method of making an OLED device, the method comprising: preparing an anode metal layer on a substrate; preparing a hole injection layer on the anode metal layer, and if the phenomenon of uneven film formation on the surface of the hole injection layer is detected, performing a first rework cleaning process on the hole injection layer and then preparing the hole injection layer again; preparing a hole transport layer on the hole injection layer, and if the phenomenon of uneven film formation on the surface of the hole transport layer is detected, performing a second reworking and cleaning process on the hole transport layer and then preparing the hole transport layer again; preparing an organic light-emitting layer on the hole transport layer, and if the phenomenon that the film forming on the surface of the organic light-emitting layer is uneven is detected, performing the second reworking and cleaning process on the organic light-emitting layer and then preparing the organic light-emitting layer again; and depositing an electron transport layer, an electron injection layer and a cathode metal layer on the organic light-emitting layer in sequence to obtain the OLED device.
Description
Technical Field
The invention relates to the technical field of display, in particular to a preparation method of an OLED device and the OLED device.
Background
OLED devices (Organic Light Emitting diodes) are gradually expanding their market impact due to their special qualities of low power consumption, fast response speed, high contrast, wide color gamut, being lighter and thinner than LCD (Liquid Crystal Display), being capable of realizing flexible Display, etc. At present, the mainstream process for mass production of OLED devices is FMM (Fine Metal Mask) evaporation process, which can realize mass production of small-sized OLED screens with high PPI (pixel density). In the field of large-size OLED display, korean LG corporation adopts an evaporation process to realize mass production, but the large-size evaporation process and the film layer structure are complicated, the yield is low, the material cost is high, and it is temporarily difficult to realize low-cost preparation of OLED devices.
With the Inkjet printing (IJP) technique, the light-emitting material can be precisely Inkjet-printed within a range defined by the pixel defining layer through the nozzle of the printer, and the thickness of the formed film is controlled by adjusting the concentration of the solute. Compared with the current scheme of evaporating organic substances, the scheme has several significant advantages: 1. materials are saved, functional materials can be printed only in the area required by luminescence, and evaporation on the whole surface of a mask is not needed; 2. QD materials are difficult to prepare into films by evaporation. The OLED is not required to be printed in vacuum, and high-precision printing can be realized only by controlling the precision of the spray head. However, the stability of the printing head of the current IJP printing device is not good, a phenomenon of bridging (adjacent pixels overflow from the grooves of the pixel definition layer and are overlapped together) or a condition of inconsistent ink volume (volume difference is greater than or equal to 1%) between different sub-pixels can be generated in the printing process, so that non-uniform film forming (Mura) occurs after the light emitting function layer of the OLED device is printed, a display defect occurs, and the production yield of the OLED device is further influenced.
In summary, there is a need to provide a method for fabricating an OLED device and an OLED device, so as to solve the problems in the prior art.
Disclosure of Invention
The invention provides a preparation method of an OLED device and the OLED device, and aims to solve the technical problems that due to the fact that the stability of a printing head of an ink-jet printing device is poor, bridging phenomena or inconsistent ink volumes among different sub-pixels can be generated in the printing process of the existing preparation method of the OLED device and the existing OLED device, film forming is not uniform after a light-emitting function layer of the OLED device is printed, the display defect phenomenon is caused, and the production yield of the OLED device is influenced.
In order to achieve the purpose, the embodiment of the invention adopts the following technical scheme:
the invention provides a preparation method of an OLED device, which comprises the following steps:
s10, preparing an anode metal layer on a substrate;
s20, preparing a hole injection layer on the anode metal layer by adopting an ink-jet printing process, and if the phenomenon of uneven film formation on the surface of the hole injection layer is detected, performing a first reworking and cleaning process on the hole injection layer and then preparing the hole injection layer again until the surface of the hole injection layer is not uneven;
s30, preparing a hole transport layer on the hole injection layer by adopting an ink-jet printing process, and if the phenomenon of uneven film formation on the surface of the hole transport layer is detected, performing a second reworking and cleaning process on the hole transport layer and then preparing the hole transport layer again until the surface of the hole transport layer is not uneven;
s40, preparing an organic light-emitting layer on the hole transport layer by adopting an ink-jet printing process, and if the phenomenon of uneven film formation on the surface of the organic light-emitting layer is detected, performing the second reworking and cleaning process on the organic light-emitting layer and then re-preparing the organic light-emitting layer until the uneven phenomenon does not exist on the surface of the organic light-emitting layer;
and S50, depositing an electron transport layer, an electron injection layer and a cathode metal layer on the organic light-emitting layer in sequence, and finally obtaining the OLED device.
In some embodiments, the first rework purge pass is in a sealed clean dry air atmosphere and the second rework purge pass is in a sealed nitrogen atmosphere.
In some embodiments, the first rework cleaning process includes a solvent spray process, a stripper spray process, a water spray process, a clean dry air hot air knife process, and a first re-bake process.
In some embodiments, the stripping solution used in the stripping solution spraying process is at least one of monoethanolamine, dimethyl sulfoxide and tetramethylammonium hydroxide.
In some embodiments, the baking temperature of the first re-baking process is 200 to 250 ℃, and the baking time of the first re-baking process is 5 to 25 min.
In some embodiments, the second rework cleaning process includes a first stage of the solvent spraying process, a second stage of the solvent spraying process, a third stage of the solvent spraying process, a nitrogen hot air knife process, and a second re-baking process.
In some embodiments, the organic solvent used in the solvent spraying process is at least one of 2, 3-butanediol, 1, 3-dimethyl-2-imidazolidinone, dipropylene glycol monomethyl ether, benzene, acetone, carbon tetrachloride, hexane, and xylene.
In some embodiments, the baking temperature of the second re-baking process is 160 to 230 ℃, and the baking time of the second re-baking process is 5 to 25 min.
In some embodiments, the inkjet printing process includes a dropping organic ink stage, a cold vacuum drying stage, and a baking stage.
Embodiments of the present invention further provide an OLED device, including an OLED device manufactured by the method for manufacturing an OLED device by inkjet printing as described above.
According to the preparation method of the OLED device and the OLED device, provided by the embodiment of the invention, when the film forming of the light-emitting functional layer in the OLED device prepared by the ink-jet printing process is uneven, the light-emitting functional layer is prepared again after the reworking and cleaning process is carried out on the problem film layer until the phenomenon of uneven film forming disappears, the product yield of the OLED device is saved, the light-emitting efficiency of the OLED device is further improved, and the service life of the OLED device is further prolonged.
Drawings
The following detailed description of embodiments of the present application is provided in conjunction with the appended drawings.
Fig. 1 is a flowchart illustrating steps of a method for manufacturing an OLED device according to an embodiment of the present invention.
Fig. 2 is a rework flow chart of a method for manufacturing an OLED device according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of an OLED device according to an embodiment of the present invention.
Detailed Description
In order to make the purpose, technical scheme and effect of the present application clearer and clearer, the present application is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
The embodiment of the application aims at the technical problem that when the cavity length of an OLED device is compensated by increasing the film thickness of a transparent conductive film in the existing OLED backboard and a preparation method thereof, the transparent conductive film is difficult to etch on a reflective metal layer, and the defect can be solved.
Fig. 1 is a flowchart illustrating steps of a method for manufacturing an OLED device according to an embodiment of the present invention. Fig. 2 is a rework flow chart of a method for manufacturing an OLED device according to an embodiment of the present invention. Wherein the method comprises the following steps:
s10, preparing an anode metal layer on a substrate.
Specifically, the S10 further includes:
firstly, a substrate is provided, a thin film transistor layer and a pixel definition layer are arranged on the substrate, and the pixel definition layer comprises a pixel area. Thereafter, an anode metal layer is deposited in the pixel area of the pixel defining layer. Preferably, the main body of the substrate base plate includes a transparent material such as glass and plastic, which is not limited in this respect. The host material of the anode metal layer includes, but is not limited to, indium tin oxide, etc.
S20, preparing a hole injection layer on the anode metal layer by adopting an ink-jet printing process, and if the phenomenon of uneven film formation on the surface of the hole injection layer is detected, performing a first reworking and cleaning process on the hole injection layer and then preparing the hole injection layer again until the phenomenon of uneven film formation on the surface of the hole injection layer does not occur.
Specifically, the S20 further includes:
firstly, an organic ink mixed with a Hole Injection Layer (HIL) material is dropped on the surface of the anode metal Layer away from the substrate, and the Hole Injection Layer (HIL) is formed after a Cold air drying stage (VCD) and a baking stage (Bake). After the Hole Injection Layer (HIL) is printed, whether the Hole Injection Layer (HIL) has a film non-uniformity phenomenon (Mura) is detected in a wet film state. If the Hole Injection Layer (HIL) has a film non-uniformity (Mura), the Hole Injection Layer (HIL) is newly prepared after a first rework cleaning process 10 is performed on the Hole Injection Layer (HIL) until the film non-uniformity (Mura) does not occur on the surface of the Hole Injection Layer (HIL). Specifically, the first rework cleaning process 10 is in a sealed Clean Dry Air atmosphere (Clean Dry Air). The first rework cleaning process includes a Solvent spray process (Solvent), a Stripper spray process (Stripper), a water spray process, a Clean Dry Air hot Air knife process (Clean Dry Air), and a first re-Bake process (Bake). The organic Solvent adopted in the Solvent spraying process (Solvent) is at least one of 2, 3-butanediol, 1, 3-dimethyl-2-imidazolidinone, dipropylene glycol monomethyl ether, benzene, acetone, carbon tetrachloride, hexane and xylene. The stripping liquid spraying process (Stripper) is used for stripping residual organic solvent and residual organic ink mixed with a hole injection layer material, and the stripping liquid adopted in the stripping liquid spraying process (Stripper) is at least one of monoethanolamine, dimethyl sulfoxide and tetramethylammonium hydroxide. The water spray process is used to clean residual impurities. The Clean Dry Air hot Air knife process (Clean Dry Air) is used for removing water on the surface of the substrate. The first re-baking process (Bake) is used to dry the Hole Injection Layer (HIL), the baking temperature of the first re-baking process is 200 to 250 ℃, and the baking time of the first re-baking process is 5 to 25 minutes (min), as shown in fig. 2.
And S30, preparing a hole transport layer on the hole injection layer by adopting an ink-jet printing process, and if the phenomenon of uneven film formation on the surface of the hole transport layer is detected, performing a second reworking and cleaning process on the hole transport layer and then preparing the hole transport layer again until the phenomenon of uneven film formation on the surface of the hole transport layer does not occur.
Specifically, the S30 further includes:
first, an organic ink mixed with a Hole Transfer Layer (H TL) material is dropped on the surface of the Hole Injection Layer (HIL) away from the substrate, and the Hole Transfer Layer (HTL) is formed after passing through a Cold air drying stage (VCD) and a baking stage (baker). After the Hole Transfer Layer (HTL) is printed, whether or not the Hole Transfer Layer (HTL) has a film-formation unevenness (Mura) is detected in a wet film state. If the film formation unevenness (Mura) occurs in the Hole Transport Layer (HTL), the Hole Transport Layer (HTL) is newly prepared after the second rework cleaning process 20 is performed on the Hole Transport Layer (HTL) until the film formation unevenness (Mura) does not occur on the surface of the Hole Transport Layer (HTL). Specifically, the second rework cleaning process 20 is at sealed N2And (4) atmosphere. The second reworking cleaning process comprises a first section of Solvent spraying process (Solvent 1), a second section of Solvent spraying process (Solvent2), a third section of Solvent spraying process (Solvent 3) and a nitrogen hot air knife process (N)2) And a second re-Bake process (Bake). Wherein, the first section of the Solvent spraying process (Solvent 1), the second section of the Solvent spraying process (Solvent2) and the third section of the Solvent spraying process (Solvent 3) are used for dissolving the organic ink mixed with the hole transport layer material in the pixel under the wet film condition by the organic Solvent and then carrying the organic inkThe organic Solvent adopted in the Solvent spraying process (Solvent) is at least one of 2, 3-butanediol, 1, 3-dimethyl-2-imidazolidinone, dipropylene glycol monomethyl ether, benzene, acetone, carbon tetrachloride, hexane and xylene. The nitrogen hot air knife process (N)2) The organic solvent used for removing the substrate surface of the substrate completely. The second re-baking process (Bake) is used to dry the Hole Transfer Layer (HTL), the baking temperature of the second re-baking process is 160 to 230 ℃, and the baking time of the second re-baking process is 5 to 25 minutes (min), as shown in fig. 2.
And S40, preparing an organic light-emitting layer on the hole transport layer by adopting an ink-jet printing process, and if the phenomenon of uneven film formation on the surface of the organic light-emitting layer is detected, performing the second reworking and cleaning process on the organic light-emitting layer and then re-preparing the organic light-emitting layer until the phenomenon of uneven film formation on the surface of the organic light-emitting layer does not occur.
Specifically, the S40 further includes:
first, an organic ink mixed with an organic light Emitting Layer (Emitting Layer) material is dropped on the surface of the Hole transport Layer (H TL) away from the base substrate, and the organic light Emitting Layer (Emitting Layer) is formed after passing through a Cold air drying stage (VCD) and a baking stage (baker). After the printing of the organic light Emitting Layer (Emitting Layer) is finished, whether the organic light Emitting Layer (Emitting Layer) has the phenomenon of uneven film formation (Mura) or not is detected under the condition of wet film. If the organic light Emitting Layer (Emitting Layer) has the uneven film formation phenomenon (Mura), the organic light Emitting Layer (Emitting Layer) is prepared again after the second rework cleaning process 20 is performed on the organic light Emitting Layer (Emitting Layer) until the uneven film formation phenomenon (Mura) does not occur on the surface of the organic light Emitting Layer (Emitting Layer). Specifically, the second rework cleaning process 20 is at sealed N2And (4) atmosphere. The second reworking cleaning process comprises a first section of Solvent spraying process (Solvent 1), a second section of Solvent spraying process (Solvent2), a third section of Solvent spraying process (Solvent 3), nitrogen hot air and hot airAir knife process (N)2) And a second re-Bake process (Bake). The first section of the Solvent spraying process (Solvent 1), the second section of the Solvent spraying process (Solvent2) and the third section of the Solvent spraying process (Solvent 3) are used for dissolving and taking away the organic ink mixed with the hole transport layer material in the pixel under the wet film condition through an organic Solvent, and the organic Solvent adopted in the Solvent spraying process (Solvent) is at least one of 2, 3-butanediol, 1, 3-dimethyl-2-imidazolidinone, dipropylene glycol monomethyl ether, benzene, acetone, carbon tetrachloride, hexane and xylene. The nitrogen hot air knife process (N)2) The organic solvent used for removing the substrate surface of the substrate completely. The second re-baking process (Bake) is used for baking the organic light Emitting Layer (Emitting Layer), the baking temperature of the second re-baking process is 160 to 230 ℃, and the baking time of the second re-baking process is 5 to 25 minutes (min), as shown in fig. 2.
And S50, depositing an electron transport layer, an electron injection layer and a cathode metal layer on the organic light-emitting layer in sequence, and finally obtaining the OLED device.
Specifically, the S50 further includes:
first, an Electron Transport Layer (ETL), an Electron Injection Layer (EIL), and a cathode metal Layer are sequentially prepared on the organic light emitting Layer, and the OLED device is finally obtained. Wherein the Electron Transport Layer (ETL), the Electron Injection Layer (EIL), and the cathode metal Layer are all prepared by evaporation process. The Electron Transport Layer (ETL) is made of an organic molecular material having a high Electron mobility and capable of effectively transporting electrons, which is not limited in the present invention. In the preparation method of the present invention, the host material of the cathode metal layer includes silver, platinum or gold, which is not limited in any way.
According to the preparation method of the OLED device, after the IJP process printing is finished and the out-of-specification unevenness (Mura) is detected under the wet film condition, the system judges the subsequent VCD (virtual machine description) and Baking processes of Bypass, and the reworking process (Rework Flow) of each step is carried out under the wet film condition. Wherein, the reworking liquid medicine in each organic functional film layer is not completely the same, and the ink-jet printing pretreatment is carried out after the reworking process (Rework Flow) is finished, and the organic ink is added again for printing after the reworking process (Rework Flow) is finished.
Fig. 3 is a schematic structural diagram of an OLED device according to an embodiment of the present invention. The OLED device includes a substrate 31, an anode metal Layer 32 formed on the substrate 31, a Hole injection Layer 33 (HIL) formed on the anode metal Layer 32, a Hole Transport Layer 34(Hole Transport Layer, H TL) formed on the Hole injection Layer 33(Hole injection Layer, HIL), an organic light Emitting Layer 35(Emitting Layer) formed on the Hole Transport Layer 34(Hole Transport Layer, H TL), an Electron Transport Layer 36(Electron Transport Layer, ETL) formed on the organic light Emitting Layer 35(Emitting Layer), an Electron injection Layer 37(Electron injection Layer, EIL) formed on the Electron Transport Layer 36(Electron Transport Layer, ETL), and a cathode metal Layer 38 formed on the Electron injection Layer 37(Electron injection Layer, EIL).
Specifically, the main body of the substrate 31 includes a transparent material such as glass or plastic, which is not limited in the present invention.
Specifically, the host material of the anode metal layer 32 includes, but is not limited to, indium tin oxide, and the like.
Specifically, the host material of the Hole injection Layer 33 (HIL) and the Hole transport Layer 34(hol Transfer Layer, H TL) may be triarylamines, triphenylmethanes, carbazoles, or other similar materials having Hole transport properties, which is not limited in this respect.
Specifically, the material of the Electron Transport Layer 36 (ETL) is an organic molecular material having high Electron mobility and capable of effectively transporting electrons, which is not limited in this disclosure.
Specifically, the host material of the cathode metal layer 38 includes silver, platinum or gold, which is not limited in this respect.
Specifically, the Hole injection Layer 33 (HIL), the Hole transport Layer 34(H TL), and the organic light Emitting Layer 35(Emitting Layer) are all prepared by an inkjet printing process, and are subjected to the above-mentioned Rework process (Rework Flow) to eliminate the phenomenon of film formation unevenness (Mura) generated on the surface.
Specifically, the Electron Transport Layer (ETL), the Electron Injection Layer (EIL), and the cathode metal Layer are all prepared by an evaporation process.
The preparation method of the OLED device and the OLED device provided by the invention can provide a Rework process (Rework Flow) when the phenomenon of uneven film forming (Mura) occurs in the preparation of the organic functional film layer by ink-jet printing, and the Rework process (Rework Flow) is executed on the organic functional film layer in a wet film state when the phenomenon of uneven film forming (Mura) occurs to save the yield.
In summary, according to the preparation method of the OLED device and the OLED device provided in the embodiments of the present invention, when the light-emitting functional layer in the OLED device prepared by the inkjet printing process is uneven in film formation, the light-emitting functional layer is prepared again after the rework cleaning process is performed on the problematic film layer until the uneven film formation phenomenon disappears, so that the product yield of the OLED device is saved, the light-emitting efficiency of the OLED device is further improved, and the service life of the OLED device is further prolonged.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The method for manufacturing the OLED device and the OLED device provided in the embodiments of the present application are described in detail above, and specific examples are applied in the description to explain the principle and the implementation manner of the present application, and the description of the embodiments above is only used to help understand the technical scheme and the core idea of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (10)
1. A method for fabricating an OLED device, the method comprising:
s10, preparing an anode metal layer on a substrate;
s20, preparing a hole injection layer on the anode metal layer by adopting an ink-jet printing process, and if the phenomenon of uneven film formation on the surface of the hole injection layer is detected, performing a first reworking and cleaning process on the hole injection layer and then preparing the hole injection layer again until the phenomenon of uneven film formation on the surface of the hole injection layer does not occur;
s30, preparing a hole transport layer on the hole injection layer by adopting an ink-jet printing process, and if the phenomenon of uneven film formation on the surface of the hole transport layer is detected, performing a second reworking and cleaning process on the hole transport layer and then preparing the hole transport layer again until the phenomenon of uneven film formation does not occur on the surface of the hole transport layer;
s40, preparing an organic light-emitting layer on the hole transport layer by adopting an ink-jet printing process, and if the phenomenon of uneven film formation on the surface of the organic light-emitting layer is detected, performing the second reworking and cleaning process on the organic light-emitting layer and then re-preparing the organic light-emitting layer until the phenomenon of uneven film formation on the surface of the organic light-emitting layer does not occur;
and S50, depositing an electron transport layer, an electron injection layer and a cathode metal layer on the organic light-emitting layer in sequence, and finally obtaining the OLED device.
2. The method of claim 1, wherein the first rework purge process is in a sealed clean dry air atmosphere and the second rework purge process is in a sealed nitrogen atmosphere.
3. The method according to claim 2, wherein the first rework cleaning process comprises a solvent spraying process, a stripper spraying process, a water spraying process, a clean dry air hot air knife process, and a first re-bake process.
4. The method according to claim 3, wherein the stripping solution used in the stripping solution spraying process is at least one of monoethanolamine, dimethylsulfoxide and tetramethylammonium hydroxide.
5. The method for preparing the OLED device according to claim 3, wherein the baking temperature of the first re-baking process is 200-250 ℃, and the baking time of the first re-baking process is 5-25 min.
6. The method according to claim 3, wherein the second rework cleaning process comprises a first stage of the solvent spraying process, a second stage of the solvent spraying process, a third stage of the solvent spraying process, a nitrogen hot air knife process, and a second re-baking process.
7. The method of claim 6, wherein the organic solvent used in the solvent spraying process is at least one of 2, 3-butanediol, 1, 3-dimethyl-2-imidazolidinone, dipropylene glycol monomethyl ether, benzene, acetone, carbon tetrachloride, hexane, and xylene.
8. The method for preparing the OLED device according to claim 6, wherein the baking temperature of the second re-baking process is 160-230 ℃, and the baking time of the second re-baking process is 5-25 min.
9. The method of claim 1, wherein the inkjet printing process comprises a dropping organic ink phase, a cold vacuum drying phase, and a baking phase.
10. An OLED device comprising an OLED device made by the method of making an OLED device by ink-jet printing as claimed in claims 1-9.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113921743A (en) * | 2021-09-29 | 2022-01-11 | 深圳市华星光电半导体显示技术有限公司 | Method for detecting uneven brightness (Mura) of organic light emitting diode display |
| CN113921743B (en) * | 2021-09-29 | 2022-07-12 | 深圳市华星光电半导体显示技术有限公司 | Method for detecting uneven brightness (Mura) of organic light emitting diode display |
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