CN112599694B - Display panel and display device - Google Patents
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- CN112599694B CN112599694B CN202011454648.8A CN202011454648A CN112599694B CN 112599694 B CN112599694 B CN 112599694B CN 202011454648 A CN202011454648 A CN 202011454648A CN 112599694 B CN112599694 B CN 112599694B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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Abstract
The application provides a display panel and a display device, the display panel includes: the circuit layer comprises a plurality of circuits and a plurality of cutting points, and the plurality of cutting points are positioned on the plurality of circuits; the anode layer is arranged on the circuit layer and comprises a plurality of light-transmitting parts, the light-transmitting parts correspond to the cutting points one by one, and the light-transmitting parts are used for enabling laser to pass through and act on the cutting points to cut corresponding circuits; the scheme can increase the transmittance of laser in the region corresponding to the cutting point on the anode layer so as to improve the success rate of pixel repair.
Description
Technical Field
The present application relates to the field of display technologies, and in particular, to the manufacture of display devices, and more particularly, to a display panel and a display apparatus.
Background
High-resolution panels are the mainstream of future development, and pixel repair is particularly important due to higher pixel integration and tighter metal wiring.
For a top emission OLED display panel, when laser is performed from a color film substrate side, since an anode includes a metal layer with high reflectivity, the metal layer may reflect most of the laser, causing a short-circuited metal line located at one side of the anode away from the color film substrate to be unable to be cut, and accompanying heat may pass through a thin pixel layer, causing short-circuiting of a cathode and an anode, which all may cause a low success rate of pixel repair.
Therefore, it is necessary to provide a display panel and a display device that can improve the success rate of pixel repair.
Disclosure of Invention
An object of this application is to provide display panel and display device, through set up the region that corresponds with a plurality of cutting points in the circuit layer of its below in the anode layer to the printing opacity portion, printing opacity portion is used for making laser pass through and acts on a plurality of cutting points are in order to cut the circuit that corresponds, have solved the problem that the metal wire that lies in the short circuit of positive pole keeping away from various membrane base plate one side can't be cut in the luminous OLED display panel in current top, cause negative pole and positive pole short circuit risk even, the prosthetic success rate of the pixel that finally causes is lower.
The embodiment of the present application provides a display panel, display panel includes:
a line layer including a plurality of lines and a plurality of cutting points, the plurality of cutting points being located on the plurality of lines;
the anode layer is arranged on the circuit layer and comprises a plurality of light-transmitting portions, the light-transmitting portions correspond to the cutting points one by one, and the light-transmitting portions are used for enabling laser to pass through and act on the cutting points to cut corresponding circuits.
In an embodiment, each of the plurality of light-transmitting portions includes:
and the composition material of the first light-transmitting layer comprises indium tin oxide.
In an embodiment, each of the plurality of light-transmitting portions is hole-shaped.
In one embodiment, the anode layer further includes a non-light-transmitting portion disposed around the plurality of light-transmitting portions, the non-light-transmitting portion including:
a reflective layer, a constituent material of the reflective layer including a metal.
In an embodiment, the opaque portion further includes:
and the second light-transmitting layer is arranged on one side of the reflecting layer close to the circuit layer.
In an embodiment, when each of the plurality of light-transmitting portions includes the first light-transmitting layer, the first light-transmitting layer and the second light-transmitting layer are disposed in the same layer.
In an embodiment, the opaque portion further includes:
and the third light-transmitting layer is arranged on one side of the reflecting layer, which is far away from the circuit layer.
In an embodiment, when each of the plurality of light-transmitting portions includes the first light-transmitting layer, the first light-transmitting layer and the second light-transmitting layer are provided in the same layer, and the first light-transmitting layer and the third light-transmitting layer are provided in the same layer.
In an embodiment, a composition material of the first light-transmitting layer and a composition material of the second light-transmitting layer are the same as or different from a composition material of the third light-transmitting layer.
Embodiments provide a display device comprising a display panel as described in any of the above.
The application provides display panel and display device, display panel is including being located a plurality of cutting points on the circuit on circuit layer, and is located anode layer on the circuit layer, through inciting somebody to action in the anode layer with the region that a plurality of cutting points correspond sets up to printing opacity portion, and printing opacity portion is used for making laser pass through and acts on a plurality of cutting points are with the circuit that the cutting corresponds. The scheme increases the transmittance of the laser in the region corresponding to the cutting point on the anode layer, so that the difficulty of cutting the short-circuited metal wire positioned on one side of the anode, which is far away from the color film substrate, is reduced, the energy requirement of the cutting process on the laser is reduced, the risk of short circuit of the cathode and the anode is reduced, and the success rate of pixel repair is finally improved.
Drawings
The present application is further illustrated by the following figures. It should be noted that the drawings in the following description are only for illustrating some embodiments of the present application, and that other drawings may be obtained by those skilled in the art without inventive effort.
Fig. 1 is an exploded view of a display panel according to an embodiment of the present disclosure.
Fig. 2 is a schematic cross-sectional view of a first display panel according to an embodiment of the present disclosure.
Fig. 3 is a schematic cross-sectional view of a second display panel according to an embodiment of the present disclosure.
Fig. 4 is a schematic cross-sectional view of a third display panel provided in the embodiment of the present application.
Fig. 5 is a schematic cross-sectional view of a fourth display panel provided in the embodiment of the present application.
Fig. 6 is a schematic cross-sectional view of a fifth display panel according to an embodiment of the present application.
Fig. 7 is a schematic cross-sectional view of a sixth display panel according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be understood that the terms "upper", "lower", "far away", "close" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, for example, "upper" merely indicates that above an object, specifically refers to directly above, obliquely above, and an upper surface, as long as it is above the object level; "close" refers to the side of the two sides of an object in the figure that is closer to another object. The above positional or positional relationships are merely for convenience in describing the present application and for simplicity of description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the present application.
In addition, it should be noted that the drawings only provide a structure that is relatively closely related to the present application, and some details that are not related to the present application are omitted, so as to simplify the drawings and make the application point clear, but not to show that the device in practice is the same as the drawings and not to limit the device in practice.
The present application provides display panels including, but not limited to, the following embodiments.
In one embodiment, as shown in fig. 1, the display panel 00 includes: a line layer 100, the line layer 100 including a plurality of lines 101 and a plurality of cut points 102, the plurality of cut points 102 being located on the plurality of lines 101; the anode layer 200 is arranged on the circuit layer 100, the anode layer 200 comprises a plurality of light-transmitting portions 201, the plurality of light-transmitting portions 201 correspond to the plurality of cutting points 102 one by one, and the plurality of light-transmitting portions 201 are used for enabling laser to pass through and act on the plurality of cutting points 102 to cut the corresponding circuit 101.
Specifically, the plurality of lines 101 may include a plurality of gate lines, a plurality of data lines, and other lines that transmit different electrical signals, wherein the plurality of gate lines and the plurality of data lines may be each disposed in parallel along different directions. It is understood that the gate lines and the data lines are disposed at different layers and are arranged to intersect to form intersections, and the cutting point 102 may be disposed between the intersections on each of the gate lines and the data lines. For example, when one of the gate lines and one of the data lines are connected by short circuit, at least one of the cutting points 102 may be selected on the gate line or the data line, so that laser is applied to the cutting point 102 through the light-transmitting portion 201 of the anode layer 200 corresponding to the cutting point 102 to cut the corresponding gate line or data line. Similarly, when two adjacent gate lines are connected by short circuit, at least one point on one of the gate lines except the short circuit position may be selected as the cut point 102, and laser is applied to the cut point 102 through the light-transmitting portion 201 of the anode layer 200 corresponding to the cut point 102 to cut the corresponding gate line.
Further, the circuit layer 100 may further include a plurality of thin film transistors, each of the thin film transistors is disposed in an area defined by a corresponding gate line and a corresponding data line, and each of the thin film transistors is electrically connected to the corresponding gate line and the corresponding data line through a gate line connection line and a data line connection line, and the gate line connection line and the data line connection line may be respectively provided with the corresponding cutting points 102. For example, when the corresponding gate line or the corresponding data line is connected to another line by short circuit, in order to avoid the malfunction and even damage of the corresponding thin film transistor, laser may be applied to the cut point 102 through the light-transmitting portion 201 of the anode layer 200 corresponding to the cut point 102 to cut the corresponding gate line connection line or the data line connection line, so as to isolate the corresponding thin film transistor.
In an embodiment, as shown in fig. 1, each of the plurality of light-transmitting portions 201 has a hole shape. Specifically, a whole layer of anode film may be formed first, and then the regions corresponding to the plurality of cut points 102 on the anode film are hollowed to form the plurality of light-transmitting portions 201, so as to form the anode layer 200; or depositing the raw material of the anode film on the pixel layer through a photomask, and forming the anode layer 200 at one time, wherein the photomask has a shielding part corresponding to the light-transmitting part 201, and the shielding part is used for preventing the raw material of the anode film from being deposited on the pixel layer. In any form of forming the anode layer 200, as long as each light-transmitting portion 201 is ensured to be in a hole shape, and the specific shape of each light-transmitting portion 201 is not limited, it can be understood that the light-transmitting portion 201 does not include any solid film layer or structure, and the laser light can directly pass through the light-transmitting portion 201, that is, the transmittance of the light-transmitting portion 201 for laser light of any wavelength is 100%.
In an embodiment, as shown in fig. 2, each of the plurality of light-transmitting portions 201 includes: the first light-transmitting layer 2011 is made of a material including indium tin oxide. Specifically, the first light-transmitting layer 2011 may be an indium tin oxide film or an aluminum-doped zinc oxide film.
The transmittance of the ito film to laser light with a wavelength of 530 nm to 535 nm is greater than 95%, and it can be understood that the first light-transmitting layer 2011 prepared by using the ito film can allow most of laser light with a wavelength of 530 nm to 535 nm to pass through, so that only a very small number of laser light with a wavelength of 530 nm to 535 nm can be reflected on the surface of the first light-transmitting layer 2011, and a large amount of energy is not generated to burn through the pixel layer, thereby reducing the risk of short circuit between the anode layer and the cathode layer.
It can be understood that, since the plurality of light-transmitting portions 201 are only disposed opposite to the plurality of cutting points 102, and the plurality of light-transmitting portions 201 only need to allow most of the laser light to pass through, the size of the plurality of light-transmitting portions 201 can be set small, and a large space in the anode layer 200 is not sacrificed, that is, the anode layer 200 can be basically used as a normal anode, and the light-emitting condition of the pixel layer is not substantially affected, and the aperture ratio of the pixel layer is not affected.
In an embodiment, as shown in fig. 1-2, the anode layer 200 further includes a non-light-transmitting portion 202, the non-light-transmitting portion 202 is disposed around the plurality of light-transmitting portions 201, and the non-light-transmitting portion 202 includes: a reflective layer 2021, the constituent material of the reflective layer 2021 including a metal. The metal may include at least one of a metal simple substance or a metal alloy that shields light, and for example, the metal may include silver, aluminum, and tungsten.
When the non-light-transmitting portion 202 includes the reflective layer 2021, the reflective layer 2021 may be disposed on the same layer as the first light-transmitting layer 2011, and further, in order to increase the surface flatness of the anode layer 200, the reflective layer 2021 may have the same thickness as the first light-transmitting layer 2011; of course, when the light-transmitting portion 201 has a hole shape, the thickness of the reflective layer 2021 may be the same as the depth of the hole.
In an embodiment, as shown in fig. 3, the opaque portion 202 further includes: the second light-transmitting layer 2022 is disposed on one side of the reflective layer 2021 close to the circuit layer 100.
When the non-light-transmitting portion 202 includes the reflective layer 2021 and the second light-transmitting layer 2022, in order to increase the surface flatness of the anode layer 200, the sum of the thicknesses of the reflective layer 2021 and the second light-transmitting layer 2022 may be equal to the thickness of the first light-transmitting layer 2011; of course, when the light-transmitting portion 201 has a hole shape, the sum of the thicknesses of the reflective layer 2021 and the second light-transmitting layer 2022 may be equal to the depth of the hole.
In an embodiment, as shown in fig. 4, when each of the plurality of light-transmitting portions 201 includes the first light-transmitting layer 2011, the first light-transmitting layer 2011 and the second light-transmitting layer 2022 are disposed in the same layer. Specifically, the first light-transmitting layer 2011 and the second light-transmitting layer 2022 can allow laser light to pass through, and a composition material of the second light-transmitting layer 2022 can refer to a composition material of the first light-transmitting layer 2011. Further, the composition material of the first light-transmitting layer 2011 and the composition material of the second light-transmitting layer 2022 can be the same, so that the first light-transmitting layer 2011 and the second light-transmitting layer 2022 can be molded at one time, that is, the first light-transmitting layer 2011 and the second light-transmitting layer 2022 can be prepared at the same time.
Note that, in this case, a region of the transparent portion 201 corresponding to the reflective layer 2021 may be hollowed, that is, no film layer is disposed in the region of the transparent portion 201 corresponding to the reflective layer 2021. It is understood that, compared with the embodiment in fig. 3, only providing the first light-transmitting layer 2011 and the second light-transmitting layer 2022 at the same layer can increase the transmittance of the light-transmitting portion 201 for light.
In an embodiment, as shown in fig. 5, the opaque portion 202 further includes: a third light-transmitting layer 2023, wherein the third light-transmitting layer 2023 is disposed on a side of the reflective layer 2021 away from the circuit layer 100.
Wherein when the non-light-transmissive portion 202 includes the reflective layer 2021, the second light-transmissive layer 2022, and the third light-transmissive layer 2023, in order to increase the surface flatness of the anode layer 200, the sum of the thicknesses of the reflective layer 2021, the second light-transmissive layer 2022, and the third light-transmissive layer 2023 may be equal to the thickness of the first light-transmissive layer 2011; of course, when the light-transmitting portion 201 has a hole shape, the sum of the thicknesses of the reflective layer 2021, the second light-transmitting layer 2022, and the third light-transmitting layer 2023 may be equal to the depth of the hole.
In an embodiment, as shown in fig. 6, when each of the plurality of light-transmitting portions 201 includes the first light-transmitting layer 2011, the first light-transmitting layer 2011 and the second light-transmitting layer 2022 are disposed in the same layer, and the first light-transmitting layer 2011 and the reflecting layer 2021 are disposed in the same layer.
Similarly, since the first light-transmitting layer 2011 and the second light-transmitting layer 2022 may be formed from the same material, a portion of the first light-transmitting layer 2011 corresponding to the second light-transmitting layer 2022 may be formed at a time with the second light-transmitting layer 2022, and a portion of the first light-transmitting layer 2011 corresponding to the reflective layer 2021 may be formed in a corresponding region after the reflective layer 2021 is formed.
Note that, in this case, a region of the light-transmitting portion 201 corresponding to the third light-transmitting layer 2023 in the non-light-transmitting portion 202 may be hollowed, that is, a region of the light-transmitting portion 201 corresponding to the third light-transmitting layer 2023 in the non-light-transmitting portion 202 is not provided with any film layer. It is to be understood that the arrangement of the first light-transmitting layer 2011 and the second light-transmitting layer 2022 in the same layer can increase the surface flatness of the anode layer 200 to some extent, and can increase the transmittance of the light-transmitting portion 201 to some extent.
In an embodiment, as shown in fig. 7, when each of the plurality of light-transmitting portions 201 includes the first light-transmitting layer 2011, the first light-transmitting layer 2011 and the second light-transmitting layer 2022 are disposed in the same layer, and the first light-transmitting layer 2011 and the third light-transmitting layer 2023 are disposed in the same layer. It is to be understood that, at this time, a portion of the first light-transmitting layer 2011 corresponding to the second light-transmitting layer 2022 and the second light-transmitting layer 2022 may be simultaneously formed over a substrate or the circuit layer 100; in addition, a portion of the first light-transmitting layer 2011 corresponding to the third light-transmitting layer 2023 and the third light-transmitting layer 2023 may be simultaneously formed over a substrate, and then, a whole transparent film formed by a portion of the first light-transmitting layer 2011 corresponding to the third light-transmitting layer 2023 and the third light-transmitting layer 2023 may be transferred onto the reflective layer 2021. Of course, the anode layer 200 may also be prepared by other means, and is not limited to the above method.
In an embodiment, a composition material of the first light-transmitting layer 2011 and a composition material of the second light-transmitting layer 2022 are the same as or different from a composition material of the third light-transmitting layer 2023. Specifically, the first light-transmitting layer 2011, the second light-transmitting layer 2022, and the third light-transmitting layer 2023 can be made of at least one of indium tin oxide and aluminum-doped zinc oxide, for example, the first light-transmitting layer 2011, the second light-transmitting layer 2022, and the third light-transmitting layer 2023 can be substantially an indium tin oxide thin film or an aluminum-doped zinc oxide thin film.
In an embodiment, the cathode layer may be made of a magnesium-silver alloy or a lithium-aluminum alloy, and specifically, the cathode layer may be formed by evaporating a low work function metal with active properties and a high work function metal with stable chemical properties together, so as to improve quantum efficiency and stability of the device. Alternatively, the cathode layer may be a double electrode formed by a metal single layer composed of a metal simple substance and a barrier layer such as lithium fluoride, cesium fluoride, rubidium fluoride and the like between the metal single layer and the corresponding light emitting device, so that higher light emitting efficiency and a better current-voltage characteristic curve can be obtained. Alternatively, the cathode layer may include the metal single layer and an organic layer doped with a low work function metal between the metal single layer and the corresponding light emitting device, which may greatly improve the light emitting device performance.
The present application also provides a display device comprising the display panel 00 as described in any of the above.
The application provides display panel and display device, display panel is including being located a plurality of cutting points on the circuit on circuit layer, and is located anode layer on the circuit layer, through inciting somebody to action in the anode layer with the region that a plurality of cutting points correspond sets up to printing opacity portion, and printing opacity portion is used for making laser pass through and acts on a plurality of cutting points are in order to cut the circuit that corresponds. The scheme increases the transmittance of the laser in the region corresponding to the cutting point on the anode layer, so that the difficulty of cutting the short-circuited metal wire positioned on one side of the anode, which is far away from the color film substrate, is reduced, the energy requirement of the cutting process on the laser is reduced, the risk of short circuit of the cathode and the anode is reduced, and the success rate of pixel repair is finally improved.
The structure of the display panel and the display device provided in the embodiments of the present application is described in detail above, and the principle and the implementation of the present application are explained in this document by applying specific examples, and the description of the above embodiments is only used to help understand the technical solution and the core idea of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (6)
1. A display panel, comprising:
a line layer including a plurality of lines and a plurality of cutting points, the plurality of cutting points being located on the plurality of lines;
the anode layer is arranged on the circuit layer and comprises a plurality of light-transmitting parts, the light-transmitting parts correspond to the cutting points one by one, each light-transmitting part is arranged opposite to the corresponding cutting point, and the light-transmitting parts are used for enabling laser to pass through and act on the cutting points to cut corresponding circuits;
wherein each of the plurality of light transmitting portions includes:
the light-emitting diode comprises a first light-emitting layer, a second light-emitting layer and a third light-emitting layer, wherein the first light-emitting layer is made of indium tin oxide;
wherein the anode layer further comprises a non-light-transmitting part, the non-light-transmitting part is arranged around the plurality of light-transmitting parts, and the non-light-transmitting part comprises:
a reflective layer, a constituent material of the reflective layer including a metal;
the second euphotic layer is arranged on one side, close to the circuit layer, of the reflecting layer;
the first euphotic layer and the second euphotic layer are arranged on the same layer.
2. The display panel according to claim 1, wherein each of the plurality of light-transmitting portions is hole-shaped.
3. The display panel of claim 1, wherein the non-light-transmissive portion further comprises:
and the third light-transmitting layer is arranged on one side of the reflecting layer, which is far away from the circuit layer.
4. The display panel according to claim 3, wherein each of the plurality of light-transmitting portions comprises two of the first light-transmitting layers, one of the first light-transmitting layers and the second light-transmitting layer are disposed in the same layer, and the other of the first light-transmitting layers and the third light-transmitting layer are disposed in the same layer.
5. The display panel according to claim 3, wherein a composition material of the first light-transmitting layer and a composition material of the second light-transmitting layer are the same as or different from a composition material of the third light-transmitting layer.
6. A display device characterized in that it comprises a display panel as claimed in any one of claims 1 to 5.
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| CN202011454648.8A CN112599694B (en) | 2020-12-10 | 2020-12-10 | Display panel and display device |
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| CN202011454648.8A CN112599694B (en) | 2020-12-10 | 2020-12-10 | Display panel and display device |
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| CN112599694B true CN112599694B (en) | 2022-11-25 |
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| CN103149755B (en) * | 2011-12-06 | 2015-09-16 | 上海中航光电子有限公司 | A kind of thin-film transistor LCD device and restorative procedure thereof |
| KR20130110990A (en) * | 2012-03-30 | 2013-10-10 | 삼성디스플레이 주식회사 | Organic light emitting diode display and method for repairing organic light emitting diode display |
| CN111524954B (en) * | 2020-05-08 | 2022-11-25 | 京东方科技集团股份有限公司 | Display substrate, maintenance method thereof and display device |
| CN111584566A (en) * | 2020-05-11 | 2020-08-25 | 武汉华星光电半导体显示技术有限公司 | Display panel, manufacturing method thereof and mask set |
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