CN112599568A - Laser-cut panel structure and preparation method thereof - Google Patents
Laser-cut panel structure and preparation method thereof Download PDFInfo
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- CN112599568A CN112599568A CN202011409805.3A CN202011409805A CN112599568A CN 112599568 A CN112599568 A CN 112599568A CN 202011409805 A CN202011409805 A CN 202011409805A CN 112599568 A CN112599568 A CN 112599568A
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- 238000002360 preparation method Methods 0.000 title abstract description 7
- 238000003698 laser cutting Methods 0.000 claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims description 86
- 239000002184 metal Substances 0.000 claims description 86
- 239000011521 glass Substances 0.000 claims description 73
- 238000005520 cutting process Methods 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 39
- 238000002161 passivation Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 5
- 239000002245 particle Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 238000000151 deposition Methods 0.000 description 6
- 230000003749 cleanliness Effects 0.000 description 5
- 229910016027 MoTi Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Laser Beam Processing (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Abstract
The invention relates to the technical field of laser cutting panel structures, in particular to a laser cutting panel structure and a preparation method thereof.
Description
Technical Field
The invention relates to the technical field of laser cutting panel structures, in particular to a laser cutting panel structure and a preparation method thereof.
Background
The manufacturing process of the Organic Light Emitting Diode (abbreviated as OELD) display panel comprises a process of cutting and edging, a laser cutting machine is adopted to cut circuits inside the OLED panel, a plurality of display screens and touch screens are often manufactured on a piece of large glass, in the manufacturing process of a small-size panel, large-size glass needs to be cut into small units so as to continue the subsequent process flow, the manufacturing process of a circuit board is complex and fine, so that the panel is cut by adopting laser, the cutting precision is high, the cutting and burning influence is small, and the improvement of the product yield is facilitated;
the laser cutting machine is also called a laser cutting machine, and focuses laser emitted from a laser into a laser beam with high power density through an optical path system. The laser beam is irradiated on the surface of the workpiece, so that the irradiated area of the surface of the workpiece reaches a melting point or a boiling point, the area is caused to form a thermal gradient and mechanical deformation, and therefore cracks are formed on the surface of the workpiece, and meanwhile, the melted or gasified workpiece material is blown away by high-pressure gas coaxial with the beam.
When the laser cutting machine is used for cutting a glass workpiece, along with the frequency of laser use and the cutting accumulation time, the energy of laser can be attenuated along with the laser cutting machine, the cutting effect of the laser is poor, the cutting depth is shallow due to the same cutting times, the glass is easy to break off, and the product rejection rate is increased.
Glass chipping and microcracking are easily caused when the glass margin is cut by laser, and particles left after cutting are easily adhered to a display panel, so that the subsequent process environment with high cleanliness is influenced.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: a laser cut panel structure and a method of making the same are provided.
In order to solve the above technical problems, a first technical solution adopted by the present invention is:
the utility model provides a laser cutting's panel structure, includes the glass substrate, the non-laser cutting area of a side of glass substrate covers there is the light shield layer, the laser cutting area of a side of glass substrate covers there is the cutting metal level, the thickness of cutting metal level is the same with the thickness of light shield layer.
The second technical scheme adopted by the invention is as follows:
a method of making a laser cut panel structure comprising the steps of:
step S1, providing a glass substrate, and forming a light shielding layer in a non-laser cutting area on one side surface of the glass substrate;
and step S2, forming a cutting metal layer in the laser cutting area on one side surface of the glass substrate.
The invention has the beneficial effects that:
the non-laser cutting area on one side face of the glass substrate is covered with the light shielding layer, and the laser cutting area on one side face of the glass substrate is covered with the cutting metal layer, so that in the laser cutting process, the cutting metal layer at the cutting position can be electrified to enable metal atoms on the layer to be charged with positive charges, when the area is cut by laser, glass in the area is cracked to form glass particles, metal films with positive charges are arranged on the glass particles, and the glass particles with positive charges are sucked away under the action of negative ion wind, so that the residue of the glass particles in laser cutting is reduced, the cleanliness of the cutting environment is improved, and the cutting yield is improved; the laser cutting's of this scheme design panel structure can avoid the glass piece adhesion that laser cutting produced within display panel, reduces and cuts the influence of splitting glass particle to follow-up processing procedure, also can reduce the waste of laser energy, prolongs laser cutting machine's life, improves the cutting effect, improves the product yield.
Drawings
FIG. 1 is a schematic diagram of a laser cut panel structure according to the present invention;
FIG. 2 is a flow chart of the steps of a method of making a laser cut panel structure according to the present invention;
description of reference numerals:
1. a glass substrate; 2. a light-shielding layer; 3. cutting the metal layer; 4. a buffer layer; 5. an active layer; 6. a gate insulating layer; 7. a gate metal layer; 8. a passivation layer; 9. a source drain metal layer; 10. a planarization layer; 11. and an electrode layer.
Detailed Description
In order to explain technical contents, achieved objects, and effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.
Referring to fig. 1, a technical solution provided by the present invention:
the utility model provides a laser cutting's panel structure, includes the glass substrate, the non-laser cutting area of a side of glass substrate covers there is the light shield layer, the laser cutting area of a side of glass substrate covers there is the cutting metal level, the thickness of cutting metal level is the same with the thickness of light shield layer.
From the above description, the beneficial effects of the present invention are:
the non-laser cutting area on one side face of the glass substrate is covered with the light shielding layer, and the laser cutting area on one side face of the glass substrate is covered with the cutting metal layer, so that in the laser cutting process, the cutting metal layer at the cutting position can be electrified to enable metal atoms on the layer to be charged with positive charges, when the area is cut by laser, glass in the area is cracked to form glass particles, metal films with positive charges are arranged on the glass particles, and the glass particles with positive charges are sucked away under the action of negative ion wind, so that the residue of the glass particles in laser cutting is reduced, the cleanliness of the cutting environment is improved, and the cutting yield is improved; the laser cutting's of this scheme design panel structure can avoid the glass piece adhesion that laser cutting produced within display panel, reduces and cuts the influence of splitting glass particle to follow-up processing procedure, also can reduce the waste of laser energy, prolongs laser cutting machine's life, improves the cutting effect, improves the product yield.
Further, the thickness of the cutting metal layer ranges from 0.1 μm to 0.15 μm.
As can be seen from the above description, setting the thickness range of the cut metal layer to be 0.1 μm to 0.15 μm can further improve the cutting effect and the product yield.
Furthermore, a buffer layer, an active layer, a grid insulating layer, a grid metal layer, a passivation layer, a source drain metal layer, a flat layer and an electrode layer are sequentially stacked on one side face, away from the glass substrate, of the light shielding layer, a first through hole is formed in the buffer layer, a second through hole is formed in the passivation layer and is opposite to and communicated with the first through hole, the source drain metal layer is filled in the first through hole and the second through hole, and the source drain metal layer in the first through hole is filled in the first through hole.
Furthermore, the cutting metal layer is made of molybdenum.
Referring to fig. 2, another technical solution provided by the present invention:
a method of making a laser cut panel structure comprising the steps of:
step S1, providing a glass substrate, and forming a light shielding layer in a non-laser cutting area on one side surface of the glass substrate;
and step S2, forming a cutting metal layer in the laser cutting area on one side surface of the glass substrate.
From the above description, the beneficial effects of the present invention are:
the preparation method of the laser cutting panel structure can prevent glass fragments generated by laser cutting from being adhered in the display panel, reduce the influence of the cut glass particles on subsequent processing procedures, reduce the waste of laser energy, prolong the service life of the laser cutting machine, improve the cutting effect and improve the product yield.
Further, the method also comprises the following steps:
step S3, forming a buffer layer and covering the surface of the shading layer; forming a first via in the buffer layer;
step S4, forming an active layer and covering the surface of the buffer layer;
step S5, forming a gate insulation layer covering the surface of the active layer; forming a second through hole in the gate insulating layer, wherein the second through hole is opposite to and communicated with the first through hole;
step S6, forming a grid metal layer and covering the surface of the grid insulation layer;
step S7, forming a passivation layer covering the surface of the gate metal layer;
step S8, forming source and drain metal layers in the first via hole and the second via hole;
step S9, forming a flat layer which covers the source drain metal layer and the surface of the passivation layer respectively;
and step S10, forming an electrode layer and covering the surface of the flat layer.
Further, the thickness of the cutting metal layer ranges from 0.1 μm to 0.15 μm.
As can be seen from the above description, setting the thickness range of the cut metal layer to be 0.1 μm to 0.15 μm can further improve the cutting effect and the product yield.
Furthermore, the cutting metal layer is made of molybdenum.
Referring to fig. 1, a first embodiment of the present invention is:
the utility model provides a laser cutting's panel structure, includes glass substrate 1, the non-laser cutting area of a side of glass substrate 1 covers there is light shield layer 2, the laser cutting area of a side of glass substrate 1 covers there is cutting metal level 3, the thickness of cutting metal level 3 is the same with the thickness of light shield layer 2.
The thickness of the cut metal layer 3 ranges from 0.1 μm to 0.15 μm, preferably 0.12 μm.
The utility model discloses a glass substrate, including light shield layer 2, glass substrate 1, light shield layer 2, light source and drain, the side of keeping away from glass substrate 1 is gone up and is overlapped in proper order and is equipped with buffer layer 4, active layer 5, gate insulation layer 6, grid metal level 7, passivation layer 8, source drain metal level 9, flat layer 10 and electrode layer 11, set up first via hole in buffer layer 4, the second via hole has been seted up on the passivation layer 8, the second via hole sets up with first via hole relatively and communicates with each other, all pack in first via hole and the second via hole and have source drain metal level 9, source drain metal level 9 in.
The material of the cutting metal layer 3 is not limited to molybdenum, metal chromium, and other black light absorbing materials.
The material of the buffer layer 4 is not limited to silicon oxide and silicon nitride, and the thickness thereof is in the range of 0.3 μm to 0.5 μm, preferably 0.4 μm;
the material of the active layer 5 is not limited to IGZO, IGZTO and graphene, and the thickness thereof ranges from 0.03 μm to 0.06 μm, preferably 0.04 μm;
the material of the gate insulating layer 6 is not limited to silicon oxide, and its thickness is in the range of 0.1 μm to 0.2 μm, preferably 0.15 μm;
the material of the gate metal layer 7 is not limited to Mo/Cu, MoTi/Cu stack, wherein Mo or MoTi has a thickness in the range of 0.02 μm to 0.05 μm, preferably 0.03 μm, and wherein Cu has a thickness in the range of 0.4 μm to 0.6 μm, preferably 0.5 μm;
the material of the passivation layer 8 is not limited to silicon oxide and silicon nitride, and the thickness thereof ranges from 0.3 μm to 0.5 μm, and is preferably 0.4 μm;
the material of the planarization layer 10 is not limited to silicon oxide and desalinized silicon, and the thickness thereof is in the range of 0.3 μm to 0.5 μm, preferably 0.4 μm;
the material of the electrode layer 11 is not limited to ITO, AZO, and IZO, and its thickness ranges from 0.05 μm to 0.08 μm, preferably 0.075 μm;
the non-laser cutting region through a side at glass substrate 1 covers has light shield layer 2, the laser cutting region of a side at glass substrate 1 covers has cutting metal layer 3, make like this in radium-shine cutting process, can be earlier to the circular telegram of cutting metal layer 3 of cutting position, make this layer of metal atom all take positive charge, when this region of laser cutting, the glass cracking in this region forms glass particle, all have the metallic film of taking positive charge on this glass particle, under the effect of negative number ion wind, the glass particle of taking positive charge all is siphoned away, thereby glass particle's residue in the radium-shine cutting has been reduced, the cleanliness factor that has improved the cutting environment improves the cutting yield.
Referring to fig. 2, the second embodiment of the present invention is:
a method of making a laser cut panel structure comprising the steps of:
step S1, providing a glass substrate 1, and forming a light shielding layer 2 in a non-laser cutting area on one side surface of the glass substrate 1;
step S2 is to form a cut metal layer 3 in the laser-cut region on one side of the glass substrate 1.
Further comprising the steps of:
step S3, forming a buffer layer 4 covering the surface of the light shielding layer 2; forming a first via hole in the buffer layer 4;
step S4, forming an active layer 5 covering the surface of the buffer layer 4;
step S5, forming a gate insulating layer 6 covering the surface of the active layer 5; forming a second via hole in the gate insulating layer 6, the second via hole being opposite to and communicating with the first via hole;
step S6, forming a gate metal layer 7 covering the surface of the gate insulating layer 6;
step S7, forming a passivation layer 8 covering the surface of the gate metal layer 7;
step S8, forming a source drain metal layer 9 in the first via hole and the second via hole;
step S9, forming a flat layer 10 which covers the source drain metal layer 9 and the passivation layer 8 respectively;
step S10, forming an electrode layer 11 covering the surface of the planarization layer 10.
The thickness of the cut metal layer 3 ranges from 0.1 μm to 0.15 μm, preferably 0.12 μm.
The material of the cutting metal layer 3 is not limited to molybdenum, metal chromium, and other black light absorbing materials.
The specific embodiment of the preparation method of the laser-cut panel structure is as follows:
depositing a light shielding layer 2 on a glass substrate 1, the light shielding layer 2 being made of a material not limited to molybdenum having a thickness ranging from 0.1 μm to 0.2 μm, preferably 0.15 μm, the metal molybdenum being exposed and etched to form a pattern, depositing a buffer layer 4 on the metal molybdenum, the buffer layer 4 being made of a material not limited to silicon oxide and silicon nitride having a thickness ranging from 0.3 μm to 0.5 μm, preferably 0.4 μm, sputtering a metal oxide (i.e., an active layer 5) on the buffer layer 4 by a PVD tool, the metal oxide being made of a material not limited to IGZO, IGZTO and graphene having a thickness ranging from 0.03 μm to 0.06 μm, preferably 0.04 μm, forming a patterned active layer 5 by exposure, developing, etching and removing the film, depositing a gate insulating layer 6 on the active layer 5 by a PECVD tool, the material being made of a material not limited to silicon oxide having a thickness ranging from 0.1 μm to 0.2 μm, preferably 0.15 μm, depositing a gate metal layer 7 on the gate insulating layer 6 by a PVD tool, the gate metal layer 7 being not limited to a stack of Mo/Cu, MoTi/Cu, wherein Mo or MoTi has a thickness in the range of 0.02 μm to 0.05 μm, preferably 0.03 μm, wherein Cu has a thickness in the range of 0.4 μm to 0.6 μm, preferably 0.5 μm, depositing a passivation layer 8 on the gate metal layer 7 by a PECVD tool, the passivation layer 8 being not limited to silicon oxide and silicon nitride and having a thickness in the range of 0.3 μm to 0.5 μm, preferably 0.4 μm, perforating the passivation layer 8, sputtering a source and drain metal layer 9 by a PVD tool, exposing and etching the source and drain metal layer 9 to form a metal source and a metal drain, depositing a planarization layer 10 on the source and drain metal layer 9, the planarization layer 10 being not limited to silicon oxide and desalinized silicon, the thickness of the flat layer 10 is in the range of 0.3 μm to 0.5 μm, preferably 0.4 μm, the flat layer is opened, and finally an electrode layer 11 is deposited by a PVD machine, wherein the material of the electrode layer 11 is not limited to ITO, AZO and IZO, the thickness of the electrode layer 11 is in the range of 0.05 μm to 0.08 μm, preferably 0.075 μm, and the cut metal layer 3 can be deposited simultaneously with any one of the gate metal layer 7, the source and drain metal layer 9, or the light shielding layer 2, and the thickness of the cut metal layer is also the same as that of the simultaneously deposited metal layer.
In summary, according to the laser-cut panel structure and the preparation method thereof provided by the invention, the non-laser-cut region on one side surface of the glass substrate is covered with the light-shielding layer, and the laser-cut region on one side surface of the glass substrate is covered with the cut metal layer, so that in the laser cutting process, the cut metal layer at the cutting position can be electrified to make the metal atoms of the layer carry positive charges, when the laser cuts the region, glass in the region is cracked to form glass particles, the glass particles are provided with metal films with positive charges, and the glass particles with positive charges are absorbed under the action of negative ion wind, so that the residue of the glass particles in laser cutting is reduced, the cleanliness of the cutting environment is improved, and the cutting yield is improved; the laser cutting's of this scheme design panel structure can avoid the glass piece adhesion that laser cutting produced within display panel, reduces and cuts the influence of splitting glass particle to follow-up processing procedure, also can reduce the waste of laser energy, prolongs laser cutting machine's life, improves the cutting effect, improves the product yield.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent changes made by using the contents of the present specification and the drawings, or applied directly or indirectly to the related technical fields, are included in the scope of the present invention.
Claims (8)
1. The utility model provides a laser cutting's panel structure, its characterized in that includes the glass substrate, the non-laser cutting area of a side of glass substrate covers there is the light shield layer, the laser cutting area of a side of glass substrate covers there is the cutting metal level, the thickness of cutting metal level is the same with the thickness of light shield layer.
2. The laser cut panel structure of claim 1, wherein the cut metal layer has a thickness in the range of 0.1 μ ι η to 0.15 μ ι η.
3. The laser-cut panel structure according to claim 1, wherein a buffer layer, an active layer, a gate insulating layer, a gate metal layer, a passivation layer, a source/drain metal layer, a flat layer and an electrode layer are sequentially stacked on a side surface of the light shielding layer away from the glass substrate, a first via hole is formed in the buffer layer, a second via hole is formed in the passivation layer, the second via hole and the first via hole are oppositely arranged and communicated, the source/drain metal layers are filled in the first via hole and the second via hole, and the source/drain metal layer in the first via hole.
4. The laser-cut panel structure of claim 1, wherein the cut metal layer is molybdenum.
5. A method of making a laser-cut panel structure according to claim 1, comprising the steps of:
step S1, providing a glass substrate, and forming a light shielding layer in a non-laser cutting area on one side surface of the glass substrate;
and step S2, forming a cutting metal layer in the laser cutting area on one side surface of the glass substrate.
6. The method of making a laser-cut panel structure according to claim 5, further comprising the steps of:
step S3, forming a buffer layer and covering the surface of the shading layer; forming a first via in the buffer layer;
step S4, forming an active layer and covering the surface of the buffer layer;
step S5, forming a gate insulation layer covering the surface of the active layer; forming a second through hole in the gate insulating layer, wherein the second through hole is opposite to and communicated with the first through hole;
step S6, forming a grid metal layer and covering the surface of the grid insulation layer;
step S7, forming a passivation layer covering the surface of the gate metal layer;
step S8, forming source and drain metal layers in the first via hole and the second via hole;
step S9, forming a flat layer which covers the source drain metal layer and the surface of the passivation layer respectively;
and step S10, forming an electrode layer and covering the surface of the flat layer.
7. The method of claim 5, wherein the thickness of the cut metal layer is in the range of 0.1 μm to 0.15 μm.
8. The method of claim 5, wherein the cutting metal layer is made of molybdenum.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113571587A (en) * | 2021-07-14 | 2021-10-29 | 深圳市华星光电半导体显示技术有限公司 | Array substrate, display panel and manufacturing method of array substrate |
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