CN112584599B - 一种高效的微波等离子炬 - Google Patents
一种高效的微波等离子炬 Download PDFInfo
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- CN112584599B CN112584599B CN202011423295.5A CN202011423295A CN112584599B CN 112584599 B CN112584599 B CN 112584599B CN 202011423295 A CN202011423295 A CN 202011423295A CN 112584599 B CN112584599 B CN 112584599B
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- 239000002184 metal Substances 0.000 claims abstract description 110
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- 239000000463 material Substances 0.000 description 22
- 239000007789 gas Substances 0.000 description 16
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
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- 229910052757 nitrogen Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000002033 PVDF binder Substances 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- Physics & Mathematics (AREA)
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- Plasma & Fusion (AREA)
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CN202011423295.5A CN112584599B (zh) | 2020-12-08 | 2020-12-08 | 一种高效的微波等离子炬 |
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CN202011423295.5A CN112584599B (zh) | 2020-12-08 | 2020-12-08 | 一种高效的微波等离子炬 |
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CN112584599A CN112584599A (zh) | 2021-03-30 |
CN112584599B true CN112584599B (zh) | 2021-09-17 |
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Families Citing this family (1)
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CN115568081B (zh) * | 2022-09-26 | 2023-06-30 | 四川大学 | 一种宽幅射流等离子体炬及其射流方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003037503A1 (fr) * | 2001-10-30 | 2003-05-08 | Setsu Anzai | Appareil a micro-ondes generateur de plasma |
JP2008177131A (ja) * | 2007-01-22 | 2008-07-31 | Shibaura Mechatronics Corp | プラズマ発生装置、プラズマ処理装置及びプラズマ処理方法 |
CN103337710A (zh) * | 2013-05-21 | 2013-10-02 | 东南大学 | 一种基于新型人工电磁材料的宽频带低副瓣透镜天线 |
CN104282999A (zh) * | 2014-09-28 | 2015-01-14 | 东南大学 | 基于新型人工电磁材料的变形龙伯透镜 |
CN107425279A (zh) * | 2017-08-31 | 2017-12-01 | 电子科技大学 | 一种基于液晶超材料的二维龙伯透镜天线 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011100070A1 (en) * | 2010-02-12 | 2011-08-18 | The Regents Of The University Of California | Metamaterial-based optical lenses |
WO2014019548A1 (zh) * | 2012-08-03 | 2014-02-06 | 深圳光启创新技术有限公司 | 谐振子及其制备方法、滤波器件及电磁波设备 |
CN104701590B (zh) * | 2015-03-24 | 2017-09-26 | 南京航空航天大学 | 一种新型宽带表面等离子带通滤波器 |
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2020
- 2020-12-08 CN CN202011423295.5A patent/CN112584599B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003037503A1 (fr) * | 2001-10-30 | 2003-05-08 | Setsu Anzai | Appareil a micro-ondes generateur de plasma |
JP2008177131A (ja) * | 2007-01-22 | 2008-07-31 | Shibaura Mechatronics Corp | プラズマ発生装置、プラズマ処理装置及びプラズマ処理方法 |
CN103337710A (zh) * | 2013-05-21 | 2013-10-02 | 东南大学 | 一种基于新型人工电磁材料的宽频带低副瓣透镜天线 |
CN104282999A (zh) * | 2014-09-28 | 2015-01-14 | 东南大学 | 基于新型人工电磁材料的变形龙伯透镜 |
CN107425279A (zh) * | 2017-08-31 | 2017-12-01 | 电子科技大学 | 一种基于液晶超材料的二维龙伯透镜天线 |
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Effective date of registration: 20240620 Address after: No. 1, 21st Floor, Unit 1, Building 10, No. 88 Niushahou Street, Jinjiang District, Chengdu City, Sichuan Province, 610000 Patentee after: Zhu Huacheng Country or region after: China Patentee after: Yang Yang Address before: 610041, No. 24, south section of first ring road, Chengdu, Sichuan, Wuhou District Patentee before: SICHUAN University Country or region before: China |
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Effective date of registration: 20240902 Address after: No. 8-1, Building 4, No. 277, Tianqin Road, Hi-tech Zone, Chengdu, Sichuan, 610000 Patentee after: Chengdu Fenyu Electronic Technology Co.,Ltd. Country or region after: China Address before: No. 1, 21st Floor, Unit 1, Building 10, No. 88 Niushahou Street, Jinjiang District, Chengdu City, Sichuan Province, 610000 Patentee before: Zhu Huacheng Country or region before: China Patentee before: Yang Yang |