CN112582524A - Light emitting device and method for manufacturing the same - Google Patents

Light emitting device and method for manufacturing the same Download PDF

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Publication number
CN112582524A
CN112582524A CN202010625380.3A CN202010625380A CN112582524A CN 112582524 A CN112582524 A CN 112582524A CN 202010625380 A CN202010625380 A CN 202010625380A CN 112582524 A CN112582524 A CN 112582524A
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CN
China
Prior art keywords
light emitting
light
reflective layer
emitting device
driving substrate
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Pending
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CN202010625380.3A
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Chinese (zh)
Inventor
黄维仕
卢英瑞
杨景仲
朱健慈
朱明辉
林芳禾
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Innolux Corp
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Innolux Corp
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Publication of CN112582524A publication Critical patent/CN112582524A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • H10K50/856Arrangements for extracting light from the devices comprising reflective means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/90Assemblies of multiple devices comprising at least one organic light-emitting element
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0058Processes relating to semiconductor body packages relating to optical field-shaping elements

Abstract

The present disclosure provides a method for manufacturing a light emitting device, which includes the following steps. A driving substrate is provided. A plurality of light emitting cells are disposed on the driving substrate. Forming a reflective layer on the driving substrate, wherein forming the reflective layer on the driving substrate includes coating the reflective layer on the driving substrate.

Description

Light emitting device and method for manufacturing the same
Technical Field
The present disclosure relates to electronic devices and methods of manufacturing the same, and more particularly, to a light emitting device and a method of manufacturing the same.
Background
The conventional light emitting device may improve light utilization efficiency by the reflective sheet, or illuminate an area where the light emitting unit (e.g., the light emitting diode) is not disposed by reflecting light by the reflective sheet. Taking a direct type light emitting device as an example, an opening may be formed in the reflective sheet according to the position, size, number, or the like of the light emitting units, so as to prevent the reflective sheet from shielding the light emitting units disposed on the driving substrate after being attached to the driving substrate. As the size of the light emitting units is reduced or the number of the light emitting units is increased, the difficulty in manufacturing the reflective sheet is increased, the structural strength of the reflective sheet is reduced, the difficulty in assembling the reflective sheet and the light emitting units (e.g., the difficulty in aligning) is increased, and the like, which leads to the difficulty in manufacturing the light emitting device.
Disclosure of Invention
The present disclosure provides a method for manufacturing a light emitting device, which is helpful to reduce the difficulty of assembling the light emitting device as a whole.
The present disclosure provides a light emitting device having good reliability.
According to an embodiment of the present disclosure, a method of manufacturing a light emitting device includes the following steps. A driving substrate is provided. A plurality of light emitting cells are disposed on the driving substrate. Forming a reflective layer on the driving substrate, wherein forming the reflective layer on the driving substrate includes coating the reflective layer on the driving substrate.
According to an embodiment of the present disclosure, a light emitting device includes a driving substrate, a plurality of light emitting units, and a reflective layer. The plurality of light emitting units are disposed on the driving substrate. The reflective layer is disposed on the driving substrate. The reflective layer has an upper surface for reflecting light from the plurality of light emitting cells. The material of the reflective layer includes one of photoresist and colloid.
Based on the above, in the embodiments of the present disclosure, by coating the reflective layer on the driving substrate, the fabrication and assembly of the conventional reflective sheet can be omitted, which is helpful for reducing the assembly difficulty of the whole light emitting device, and can reduce the problems of shadows and reliability of the conventional reflective sheet caused by the warping of the glued area due to heating.
In order to make the aforementioned and other features and advantages of the disclosure more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
Fig. 1A to 1C are schematic partial cross-sectional views illustrating a manufacturing process of a light emitting device according to an embodiment of the present disclosure;
fig. 2-7 are partial schematic views of light emitting devices according to some embodiments of the present disclosure.
Detailed Description
The present disclosure may be understood by reference to the following detailed description taken in conjunction with the accompanying drawings. It should be noted that in order to facilitate the understanding of the reader and the simplicity of the drawings, the various drawings in the present disclosure depict only a portion of an electronic device/display device and certain elements of the drawings are not necessarily drawn to scale. In addition, the number and size of the elements in the figures are merely illustrative and are not intended to limit the scope of the present disclosure. For example, the relative sizes, thicknesses, and locations of various layers, regions, or structures may be reduced or exaggerated for clarity.
Certain terms are used throughout the description and following claims to refer to particular elements. Those skilled in the art will appreciate that electronic device manufacturers may refer to the same components by different names. This document does not intend to distinguish between components that differ in function but not name. In the following description and claims, the terms "having" and "including" are used as open-ended terms, and thus should be interpreted to mean "including, but not limited to …".
Directional phrases used herein include, for example: "upper", "lower", "front", "rear", "left", "right", etc., refer only to the orientation of the figures. Accordingly, the directional terminology is used for purposes of illustration and is in no way limiting. It will be understood that when an element or layer is referred to as being "on" or "connected to" another element or layer, it can be directly on or connected to the other element or layer or intervening elements or layers may be present (not directly). In contrast, when an element or layer is referred to as being "directly on" or "directly connected to" another element or layer, there are no intervening elements or layers present therebetween.
The terms "about," "equal," "identical," "substantially," or "approximately" as referred to herein generally represent a range of 10% of a given value or range, or 5%, 3%, 2%, 1%, or 0.5% of the given value or range. Further, the phrase "a given range is from a first value to a second value," and "a given range is within a range from a first value to a second value" means that the given range includes the first value, the second value, and other values therebetween.
In some embodiments of the present disclosure, terms such as "connected," "interconnected," and the like, with respect to bonding, connecting, and the like, may refer to two structures being in direct contact, or may also refer to two structures not being in direct contact, unless otherwise specified, with respect to the structure between which they are disposed. The terms coupled and connected should also be construed to include both structures being movable or both structures being fixed. Furthermore, the terms "electrically connected" and "coupled" encompass any direct and indirect electrical connection.
In the following embodiments, the same or similar elements will be denoted by the same or similar reference numerals, and the detailed description thereof will be omitted. Furthermore, the features of the various embodiments may be combined in any suitable manner without departing from the spirit or conflict of the invention, and all such modifications and equivalents as may be within the spirit and scope of the disclosure are deemed to be within the ambit and scope of the disclosure. In addition, the terms "first", "second", and the like in the description and the claims are only used for naming different elements or distinguishing different embodiments or ranges, and are not used for limiting the upper limit or the lower limit of the number of elements, nor are they used for limiting the manufacturing order or the arrangement order of the elements.
The electronic device of the present disclosure may include, but is not limited to, a display device, an antenna device, a sensing device, a light-emitting device, or a splicing device. The electronic device may include a bendable or flexible electronic device. The electronic device may for example comprise a liquid crystal (liquid crystal) layer or a light emitting diode. The light emitting diode may include, for example, an Organic Light Emitting Diode (OLED), a submillimeter light emitting diode (mini LED), a micro light emitting diode (micro LED), or a quantum dot light emitting diode (quantum dot LED, which may include QLED, QDLED), a fluorescent (fluorescent), a phosphorescent (phosphor), or other suitable material, or a combination thereof, but is not limited thereto. The present disclosure will be described below with reference to a light emitting device as an electronic device, but the present disclosure is not limited thereto.
The light emitting device of the present disclosure may be any kind of light emitting device. In some embodiments, the light emitting device may serve as a light source device. For example, the light emitting device can be used as a backlight module or a front light module in a display device (such as a non-self-luminous display device) to provide a surface light source. The non-self-luminous display device may include a liquid crystal display device, but is not limited thereto. Alternatively, the light emitting device may be used as an outdoor or indoor lighting device to provide illumination. In other embodiments, the light emitting device can be used as a self-emitting display device to provide a display screen. The self-light emitting display device may include a light emitting diode, a light conversion layer or other suitable materials, or a combination thereof, but is not limited thereto. The light emitting diode may include, for example, an Organic Light Emitting Diode (OLED), a sub-millimeter light emitting diode (mini LED), a micro light emitting diode (micro LED), or a quantum dot light emitting diode (quantum dot LED, which may include a QLED or a QDLED), but is not limited thereto. The light conversion layer may include a wavelength conversion material and/or a light filtering material, and the light conversion layer may include, for example, fluorescence (phosphorescence), phosphorescence (phor), Quantum Dots (QD), other suitable materials, or combinations thereof, but is not limited thereto.
Fig. 1A to 1C are schematic partial cross-sectional views illustrating a manufacturing process of a light emitting device according to an embodiment of the present disclosure. Referring to fig. 1A, a driving substrate 100 is provided. The driving substrate 100 may include a substrate (not shown) and a wiring layer (not shown). The substrate may be any substrate suitable for carrying a circuit layer, and may be a rigid substrate or a flexible substrate. For example, the material of the substrate may include glass, plastic, aluminum, or a combination thereof, but is not limited thereto. The material of the circuit layer may include a light-transmitting conductive material or a light-opaque conductive material. The light-transmissive conductive material may include, but is not limited to, a metal oxide or a metal mesh. The opaque conductive material may include a metal, an alloy, or a combination thereof, but is not limited thereto.
Next, a plurality of pads 101 are formed on the driving substrate 100. The material of the pads 101 may include a transparent conductive material or an opaque conductive material. For the related description of the transparent conductive material and the opaque conductive material, please refer to the foregoing description, which will not be repeated herein. In some embodiments, the material of the pads 101 may include tin, but is not limited thereto.
The pads 101 may include a plurality of first pads 101A and a plurality of second pads 101B. Each first pad 101A and an adjacent second pad 101B form a pad unit U101. The pad unit U101 is suitable for being connected to a light emitting unit (not shown in fig. 1A) to be formed later, wherein the first pad 101A is connected to an anode of the light emitting unit, and the second pad 101B is connected to a cathode of the light emitting unit. In some embodiments, the pad units U101 are arranged in an array in the first direction D1 and the second direction D2. The first direction D1 and the second direction D2 are perpendicular to the normal direction D3 of the driving substrate 100, and the first direction D1 and the second direction D2 intersect with each other. In some embodiments, the first direction D1 and the second direction D2 are perpendicular to each other, but not limited thereto. In some embodiments, the width of the first pad 101A in the first direction D1 (or the second direction D2) may be the same as the width of the second pad 101B in the first direction D1 (or the second direction D2). In other embodiments, the width of the first pad 101A in the first direction D1 (or the second direction D2) may be different from the width of the second pad 101B in the first direction D1 (or the second direction D2). The shapes of the first pads 101A and the second pads 101B in a top view (not shown) of the driving substrate 100 may be the same or different according to design requirements, which is not limited herein.
Next, the reflective layer 102 is formed on the driving substrate 100. For example, the reflective layer 102 may be formed on the driving substrate 100 by a coating (coating) process. The coating process may vary depending on the choice of material. For example, the coating process may include spin coating (spin coating), printing (printing), or other known types of coating methods. In some embodiments, the material of the reflective layer 102 may include a photoresist (e.g., white photoresist), and the coating process may include spin coating, but is not limited thereto.
In some embodiments, the reflective layer 102 formed on the driving substrate 100 may cover the plurality of pads 101, i.e., a thickness T102 of the reflective layer 102 in the normal direction D3 of the driving substrate 100 (e.g., a maximum thickness of the reflective layer 102) may be greater than a thickness T101 of the pads 101 (e.g., a maximum thickness of the pads 101). In other embodiments, the thickness T102 of the reflective layer 102 in the normal direction D3 of the driving substrate 100 may be less than or equal to the thickness T101 of the pad 101.
The material of the reflective layer 102 is then patterned to form a reflective layer 102', as shown in FIG. 1B. The method of patterning the reflective layer 102 may include photolithography (photolithography), in which a geometric structure is patterned on a photoresist by an exposure process and a development process, and then the pattern on a mask (not shown) is transferred onto the reflective layer 102' by an etching process. The reflective layer 102' has a plurality of openings H102, and the plurality of openings H102 respectively expose a plurality of pad units U101 disposed on the driving substrate 100. The shape of the opening H102 may be a circle, a quadrangle, or another polygon from a top view (not shown) of the driving substrate 100, which is not limited herein.
Referring to fig. 1C, a plurality of light emitting units 103 are disposed on the driving substrate 100. For example, a plurality of light emitting units 103 may be disposed on the plurality of pad units U101 by Surface Mount Technology (SMT) to form a light emitting unit array (not shown in fig. 1C, see fig. 4). The light emitting unit 103 may include a light emitting diode. The light emitting diode may include a light emitting diode die (LED die) or a light emitting diode package (LED package). In addition, the light emitting diode may include, for example, an Organic Light Emitting Diode (OLED), a sub-millimeter light emitting diode (mini LED), a micro light emitting diode (micro LED), or a quantum dot light emitting diode (quantum dot LED, which may include a QLED or a QDLED), but is not limited thereto.
After the plurality of light emitting units 103 are provided, the fabrication of the light emitting device 1 is preliminarily completed. The light emitting device 1 includes a driving substrate 100, a plurality of light emitting cells 103, and a reflective layer 102'. A plurality of light emitting units 103 are disposed on the driving substrate 100. The reflective layer 102 'is disposed on the driving substrate 100, and the material of the reflective layer 102' includes, for example, photoresist or glue. The reflective layer 102' has an upper surface S102T, a lower surface S102B, and a side surface S102S. The upper surface S102T is used to reflect light (not shown) from the plurality of light emitting cells 103. The lower surface S102B contacts the driving substrate 100 and is located between the upper surface S102T and the driving substrate 100. The side surface S102S connects the upper surface S102T and the lower surface S102B and faces the pad unit U101.
Since the reflective layer 102' is coated on the driving substrate 100, the fabrication and assembly of the conventional reflective sheet can be omitted, thereby reducing the assembly difficulty or the assembly time of the whole light emitting device 1. In addition, since the conventional reflective sheet can be attached to the driving substrate 100 without using an adhesive layer or tape, the problems of shadows and reliability of the conventional reflective sheet due to the warping of the glued area caused by heat can be avoided. In addition, the formation of the reflective layer 102 ' by the photolithography process can effectively reduce the distance D between the bonding pad (e.g., the first bonding pad 101A or the second bonding pad 101B) and the side surface S102S of the reflective layer 102 ', which is helpful for increasing the area of the reflective layer 102 ', thereby increasing the reflective effect or increasing the light utilization rate. In some embodiments, the distance D can fall within a range from 0 μm to 15 μm (i.e., 0 μm < D < 15 μm), and is, for example, but not limited to, 10 μm < D < 15 μm.
Fig. 2 to 7 are partial schematic views of a light emitting device according to some embodiments of the present disclosure, wherein fig. 4 is a perspective view, and fig. 2, 3, 5 to 7 are cross-sectional views.
Referring to fig. 2, the light emitting device 1A further includes a protective adhesive 104. The protective adhesive 104 is disposed on the driving substrate 100 and between the light emitting unit 103 and the driving substrate 100. In some embodiments, the protective glue 104 may also be disposed between the reflective layer 102A and the driving substrate 100. The protective adhesive 104 may provide insulation, protection, or moisture protection. The protective adhesive 104 may be a conformal adhesive (conformal coating). For example, the material of the protective adhesive 104 may include Silicone (Silicone), Acrylic (Acrylic), polyurethane (Urethane), Epoxy (Epoxy), or a combination thereof, but is not limited thereto.
The light-emitting device 1A in fig. 2 differs from the light-emitting device 1 in fig. 1C in the order of steps, the manner of production, materials, and the like, and the step of forming the reflective layer 102A in fig. 2 is subsequent to the step of providing the plurality of light-emitting units 103. In the light-emitting device 1 of fig. 1C, the step of forming the reflective layer 102' is performed before the step of providing the plurality of light-emitting units 103. In addition, the material of the reflective layer 102' includes photoresist. In addition, the step of forming the reflective layer 102' on the driving substrate 100 includes patterning a material of the reflective layer 102.
On the other hand, in the light emitting device 1A of fig. 2, the reflective layer 102A is formed on the driving substrate 100 after the plurality of light emitting cells 103 are provided, for example. In addition, the material of the reflective layer 102' may include a gel, such as white glue. In addition, the step of forming the reflective layer 102A on the driving substrate 100 may include baking (baking) a material of the reflective layer 102A to cure the white glue. Further, the method of manufacturing the light emitting device 1A may further include coating the protective paste 104 before the step of providing the plurality of light emitting units 103.
Specifically, a plurality of pads (including a plurality of first pads 101A and a plurality of second pads 101B), a protective adhesive 104, a plurality of light emitting units 103, and a reflective layer 102A are sequentially formed on the driving substrate 100, for example. In some embodiments, the reflective layer 102A may be formed on the driving substrate 100 through a printing process. In some embodiments, the reflective layer 102A may also be disposed on the protective paste 104 not covered by the light emitting unit 103, wherein the side surface S102S of the reflective layer 102A contacts the protective paste 104. In some embodiments, the side surface S102S of the reflective layer 102A may also contact the light emitting cell 103. In other words, a distance (not labeled) between the side surface S102S of the reflective layer 102A and the corresponding light emitting unit 103 may be 0, but is not limited thereto. By reducing the distance between the side surface S102S of the reflective layer 102A and the corresponding light emitting unit 103, the area of the reflective layer 102A can be increased, thereby improving the reflective effect or improving the light utilization rate. In other embodiments, the distance between the side surface S102S of the reflective layer 102A and the corresponding light emitting cell 103 can be in a range from 0 μm to 40 μm (i.e., 0 μm ≦ distance ≦ 40 μm).
Referring to fig. 3, the main differences between the light emitting device 1B and the light emitting device 1A of fig. 2 are as follows. The light emitting device 1B does not include the protective paste 104 of fig. 2. Further, the reflective layer 102B of the light emitting device 1B is positioned between the light emitting unit 103 and the driving substrate 100 in addition to being disposed on the driving substrate 100. The material of the reflective layer 102B may include a glue, such as white glue. In addition, forming the reflective layer 102B on the driving substrate 100 may include baking the reflective layer 102B to cure the white glue. In some embodiments, the reflective layer 102B may be formed on the driving substrate 100 after the plurality of light emitting cells 103 are disposed. In other embodiments, the reflective layer 102B may be formed on the driving substrate 100 before the plurality of light emitting cells 103 are disposed.
Referring to fig. 4, the light emitting device 1C may further include a back plate 105 in addition to the driving substrate (not shown in fig. 4), the pads (not shown in fig. 4), the reflective layer (not shown in fig. 4), and the light emitting units 103. The back plate 105 has a bottom surface S105B and a sidewall surface S105S, wherein the driving substrate is disposed on the bottom surface S105B of the back plate 105, and the sidewall surface S105S surrounds the light emitting cell array formed by the plurality of light emitting cells 103.
In some embodiments, the relative arrangement relationship of the driving substrate, the pads, the reflective layer and the light emitting units 103 in the light emitting device 1C can refer to fig. 1C or fig. 3. In other embodiments, the light emitting device 1C may further include a protective adhesive (not shown in fig. 4), and reference is made to fig. 2 for a relative arrangement relationship of the driving substrate, the pads, the reflective layer, the protective adhesive, and the light emitting units 103. The light-emitting device 1C may further include other elements or layers according to different requirements. For example, the light emitting device 1C may further include an optical film such as a diffusion sheet (not shown in fig. 4) or a prism sheet (not shown in fig. 4), and the driving substrate, the pads, the reflective layer, the protective adhesive (optionally), and the light emitting units 103 may be located between the optical film and the back plate 105.
Referring to fig. 5, the main differences between the light emitting device 1D and the light emitting device 1C of fig. 4 are as follows. In the light-emitting device 1D, the reflective layer 102D may be provided on the side wall surface S105S of the rear plate 105 in addition to the driving substrate 100, so as to further improve the light utilization efficiency or replace the existing module side attachment.
In some embodiments, the relative arrangement relationship of the driving substrate 100, a plurality of pads (not shown in fig. 5), the reflective layer 102D disposed on the driving substrate 100, and the plurality of light emitting units 103 in the light emitting device 1D can refer to fig. 1C or fig. 3. In other embodiments, the light emitting device 1D may further include a protective adhesive (not shown in fig. 5), and reference is made to fig. 2 for a relative arrangement relationship between the driving substrate 100, the pads, the reflective layer 102D disposed on the driving substrate 100, the protective adhesive, and the light emitting units 103. The light-emitting device 1D may further include other elements or layers according to different requirements. For example, the light emitting device 1D may further include an optical film such as a diffusion sheet (not shown in fig. 5) or a prism sheet (not shown in fig. 5), and the driving substrate 100, a plurality of pads, the reflective layer 102D disposed on the driving substrate 100, a protective adhesive (optionally), and a plurality of light emitting units 103 may be located between the optical film and the back plate 105.
Referring to fig. 6, the light emitting device 1E may further include a signal pad 106 and a flexible circuit board 107 in addition to the driving substrate 100, a plurality of pads (not shown in fig. 6), the reflective layer 102E and the plurality of light emitting units 103. The signal pads 106 are disposed on the driving substrate 100 and electrically connected to the light emitting units 103 through a circuit layer (not shown in fig. 6) in the driving substrate 100. The material of the signal pads 106 may include a light transmissive conductive material or a light opaque conductive material. The description of the transparent conductive material and the opaque conductive material can be referred to the above, and will not be repeated herein. In some embodiments, the reflective layer 102E may extend from the active region R1 where the light emitting cells 103 (light emitting cell array) are located into the peripheral region R2 where the signal pads 106 are located, and cover the edges of the signal pads 106 (e.g., the edges of the signal pads 106 close to the active region R1) to replace the existing waterproof insulating glue (e.g., the ta-fei (tuffy) glue). The flexible circuit board 107 is disposed on the signal pads 106 exposed by the reflective layer 102E and electrically connected to the signal pads 106.
In some embodiments, the relative arrangement relationship of the driving substrate 100, the plurality of pads, the reflective layer 102E in the active region R1, and the plurality of light emitting units 103 in the light emitting device 1E can refer to fig. 1C or fig. 3. In other embodiments, the light emitting device 1E may further include a protective adhesive (not shown), and the driving substrate 100, the pads, the reflective layer 102E in the active region R1, the protective adhesive, and the light emitting units 103 are disposed in a relative relationship as shown in fig. 2.
Referring to fig. 7, the light emitting device 1F includes a driving substrate 100, a plurality of pads (including a plurality of first pads 101A and a plurality of second pads 101B), a plurality of light emitting units 103, and a light source 108. The driving substrate 100 includes a substrate 1000 and a wiring layer (not shown). The substrate 1000 may also serve as a light guide plate, in addition to being suitable for carrying a wiring layer. For example, the material of the substrate 1000 may include glass, plastic, or a combination thereof, but is not limited thereto. The substrate 1000 has an upper surface S1000T, a lower surface S1000B, and a side surface S1000S. The upper surface S1000T and the lower surface S1000B are opposite to each other, and the side surface S1000S connects the upper surface S1000T and the lower surface S1000B. A wiring layer (not shown in fig. 7) is disposed on the upper surface S1000T. The material of the circuit layer may include a light-transmitting conductive material to improve light transmittance, but not limited thereto. A plurality of pads (including a plurality of first pads 101A and a plurality of second pads 101B) are disposed on the upper surface S1000T and electrically connected to the circuit layer of the driving substrate 100. The light emitting units 103 are disposed on the upper surface S1000T and electrically connected to the circuit layer of the driving substrate 100 through the pad units U101. The light source 108 is disposed beside the side surface S1000S and adapted to emit light (not shown) toward the side surface S1000S.
In some embodiments, the light source 108 may include a plurality of light emitting units 108A and a circuit board 108B. The plurality of light emitting cells 108A are disposed on a surface of the circuit board 108B facing the side surface S1000S and are arranged, for example, along the second direction D2, but not limited thereto. The light emitting unit 108A may include a light emitting diode. The light emitting diode may include a light emitting diode die or a light emitting diode package. In addition, the light emitting diode may include, for example, an organic light emitting diode, a sub-millimeter light emitting diode, a micro light emitting diode, or a quantum dot light emitting diode (which may include a QLED, a QDLED), but is not limited thereto.
The light emitted from the light emitting unit 108A enters the substrate 1000 from the side surface S1000S of the substrate 1000 and is transmitted in the substrate 1000 through Total Internal Reflection (TIR). In some embodiments, the lower surface S1000B of the substrate 1000 may include a plurality of patterns (not shown in fig. 7). The plurality of patterns is adapted to frustrate total internal reflection such that light entering the substrate 1000 exits the upper surface S1000T. For example, the plurality of patterns may include a plurality of dots, and the plurality of dots may be formed on the lower surface S1000B of the substrate 1000 by printing, but not limited thereto.
The light-emitting device 1F may also optionally include other elements or layers according to different requirements. For example, the light emitting device 1F may also include a reflective layer 102F. The reflective layer 102F is disposed on the lower surface S1000B of the substrate 1000 to improve light utilization. The material of the reflective layer 102F may include a metal, an alloy, a silicon gel, a white photoresist, a white glue, or a combination thereof. The reflective layer 102F may be a continuous film layer over the entire surface or may be a patterned film layer. In some embodiments, the light emitting device 1F may further include a protective glue 104. The related description of the protection adhesive 104 refers to the foregoing description, and will not be repeated here. In some embodiments, the light emitting device 1F may include a plurality of light sources 108, which may be disposed on two adjacent side surfaces S1000S, two opposite side surfaces S1000S, three side surfaces S1000S, or four side surfaces S1000S of the substrate 1000.
In summary, in the embodiments of the present disclosure, by coating the reflective layer on the driving substrate, the fabrication and assembly of the conventional reflective sheet can be omitted, which is helpful to reduce the assembly difficulty of the whole light emitting device and avoid the problems of shadows and reliability caused by the warping of the bonded area due to heating of the conventional reflective sheet.
In the embodiments of the present disclosure, the thickness or distance or the related dimension of each component can be measured by using an Optical Microscope (OM), a Scanning Electron Microscope (SEM) or other suitable methods.
In some embodiments, the area of the reflective layer can be increased by controlling the distance between the pads and the side surface of the reflective layer or the distance between the light emitting units and the side surface of the reflective layer, so as to improve the reflection effect or improve the light utilization rate. In some embodiments, a reflective layer may be disposed on the sidewall surface of the backplane to further improve light utilization or to replace the existing module side-attachment. In some embodiments, the reflective layer may extend from the active region where the plurality of light emitting cells (light emitting cell arrays) are located into the peripheral region where the signal pads are located, and cover the edges of the signal pads, so as to replace the existing waterproof insulating adhesive. In some embodiments, the light emitting device may further include a light source disposed on a side surface of the driving substrate, and a lower surface of the driving substrate may include a plurality of patterns or be provided with a reflective layer to improve light intensity or uniformity output from the light emitting device.
The above embodiments are only used for illustrating the technical solutions of the present disclosure, and not for limiting the same; while the present disclosure has been described in detail with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present disclosure.
Although the embodiments of the present disclosure and their advantages have been described above, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure, and all changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure. Moreover, the scope of the present disclosure is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification, but it is to be understood that any process, machine, manufacture, composition of matter, means, method and steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present disclosure. Accordingly, the scope of the present disclosure includes the processes, machines, manufacture, compositions of matter, means, methods, and steps described above. In addition, each claim constitutes a separate embodiment, and the scope of the present disclosure also includes combinations of the respective claims and embodiments. The scope of the present disclosure is to be determined by the claims appended hereto.

Claims (12)

1. A method of manufacturing a light emitting device, comprising:
providing a driving substrate;
disposing a plurality of light emitting units on the driving substrate; and
forming a reflective layer on the driving substrate, including:
and coating the reflecting layer on the driving substrate.
2. The method for manufacturing a light-emitting device according to claim 1, wherein the step of forming the reflective layer is performed before the step of providing the plurality of light-emitting units.
3. The method for manufacturing a light-emitting device according to claim 2, wherein a material of the reflective layer is a photoresist.
4. The method according to claim 3, wherein the step of forming the reflective layer further comprises:
patterning a material of the reflective layer.
5. The method for manufacturing a light-emitting device according to claim 1, wherein the step of forming the reflective layer is after the step of providing the plurality of light-emitting units.
6. The method for manufacturing a light-emitting device according to claim 5, wherein a material of the reflective layer is a colloid.
7. The method for manufacturing a light-emitting device according to claim 6, wherein the step of forming the reflective layer further comprises:
and baking the material of the reflecting layer.
8. The method for manufacturing a light-emitting device according to claim 5, further comprising:
a protective paste is applied before the step of disposing the plurality of light emitting cells.
9. A light-emitting device, comprising:
a drive substrate;
a plurality of light emitting units disposed on the driving substrate; and
a reflective layer disposed on the driving substrate, the reflective layer having an upper surface for reflecting light from the plurality of light emitting cells;
wherein the reflective layer comprises one of a photoresist and a colloid.
10. The light-emitting device according to claim 9, wherein the plurality of light-emitting units are arranged in an array.
11. The light-emitting device according to claim 9, further comprising:
the signal connecting pad is arranged on the driving substrate, and the reflecting layer also covers the edge of the signal connecting pad; and
and the flexible circuit board is arranged on the signal connecting pad exposed by the reflecting layer and is electrically connected with the signal connecting pad.
12. The light-emitting device according to claim 9, further comprising:
the back plate is provided with a bottom surface and side wall surfaces, wherein the driving substrate is arranged on the bottom surface of the back plate, and the reflecting layer is further arranged on the side wall surfaces of the back plate.
CN202010625380.3A 2019-09-12 2020-07-02 Light emitting device and method for manufacturing the same Pending CN112582524A (en)

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