CN112575306A - Anode layer ion source for reducing sputtering pollution - Google Patents

Anode layer ion source for reducing sputtering pollution Download PDF

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Publication number
CN112575306A
CN112575306A CN202011593701.2A CN202011593701A CN112575306A CN 112575306 A CN112575306 A CN 112575306A CN 202011593701 A CN202011593701 A CN 202011593701A CN 112575306 A CN112575306 A CN 112575306A
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ion source
cathode
ring
anode layer
layer ion
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郭杏元
曹永盛
马金鹏
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Optical Core Film Shenzhen Co ltd
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Optical Core Film Shenzhen Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)

Abstract

The invention provides an anode layer ion source with a high magnetic mirror ratio through finite element numerical calculation. The main structure comprises: the cooling device comprises an anode ring, a cathode inner ring, a cathode outer ring, a permanent magnet, a magnet yoke, an air supply system, a cooling liquid inlet/outlet pipeline of the anode ring, a cooling liquid inlet/outlet pipeline of the cathode inner ring and a cooling liquid inlet/outlet pipeline of the magnet yoke. The method is characterized in that: the magnetic mirror ratio of the anode layer ion source discharge cavity magnetic field is more than 2; the anode layer ion source discharge cavity is in central symmetry with a magnetic mirror of a magnetic field; the anode layer ion source is cooled by 3 paths of cooling liquid channels, and the anode ring, the cathode inner ring, the magnet yoke and the permanent magnet are cooled respectively. The design can effectively reduce sputtering pollution of the anode layer ion source and prolong the maintenance time of the anode layer ion source.

Description

Anode layer ion source for reducing sputtering pollution
Technical Field
The invention relates to the field of vacuum coating equipment, in particular to an anode layer ion source for reducing sputtering pollution.
Background
The anode layer ion source is a cold cathode ion source with a closed electron migration and emission channel, and the main components of the cold cathode ion source comprise a cathode inner ring, a cathode outer ring, an anode ring, a magnet yoke, a gas distribution system, a cooling system, a driving power supply and the like. The discharge cavity formed by the cathode inner ring, the cathode outer ring and the anode ring is surrounded by a magnetic circuit formed by the magnet, the magnet yoke and the pole shoes of the cathode inner ring and the cathode outer ring, and the anode ring is connected with a positive potential, the cathode inner ring, the cathode outer ring and the magnet yoke and the like and is grounded. Under the action of orthogonal electric and magnetic fieldsThe electrons undergo a closed-loop migration within the discharge chamber and form a stream of electrons. The electrons migrating in the closed loop ionize into ions and electrons when they collide with the gas. Under the action of positive potential of the anode ring, the ions are accelerated and emitted out of the discharge channel to form ion beams, and the ion beams bombard or etch the substrate. The anode layer ion source has high ion beam current density, wide ion beam energy range, simple structure, low design cost and large size, and is widely applied to the fields of precision optics, semiconductors, microelectronics, decorative coating, hard films and the like. The main function is to improve the adhesive force with the base material, effectively control the stress of the film layer and improve the microstructure and compactness. In addition, in the deposition process of the diamond-like carbon film (DLC), the anode layer ion source is usually used for ionizing inert gas such as argon, so that ion current formed by the anode layer ion source is incident to the reaction vacuum cavity, the ionization rate of the reaction gas (such as acetylene) is increased, and the SP in the DLC coating is further improved3The ratio and the deposition rate of the organic silicon compound improve the quality of a deposited film and shorten the deposition time.
In the prior art, an inner cathode ring, an outer cathode ring and a magnetic yoke of an anode layer ion source are made of carbon steel with high magnetic permeability, the inner cathode ring and the outer cathode ring are parts of a magnetic circuit of the ion source, and a cathode sputtering phenomenon inevitably occurs in the using process. Iron atoms on the cathode ring are sputtered out, and a part of the iron atoms are deposited in the ion source, so that the insulation structure is damaged, the cathode and the anode can be conducted, and frequent maintenance is needed; another part of iron atoms are emitted out along with the ion beam and deposited on the workpiece, which affects the film deposition effect, especially for the optical film, the optical performance is seriously affected. Chinese patents CN109536906A and CN211062682U adopt a material (such as graphite) with low sputtering yield as a sputtering ring, and the sputtering ring is wrapped on the inner and outer rings of the cathode which is easy to sputter, so as to reduce the sputtering pollution of the inner and outer cathodes. However, graphite is very difficult to process and easy to crack, which brings inconvenience to installation and maintenance, and the cost is increased correspondingly.
The magnetic field in the discharge chamber formed by the cathode inner ring, the cathode outer ring and the anode ring is non-uniform magnetic field, and the charged particles are generated in the non-uniform magnetic fieldThe spiral radius and the pitch of the spiral motion are changed along with the strength of the magnetic field. When a charged particle spirals towards a location where the magnetic field is stronger, it experiences a magnetic force component that is opposite to the direction of its travel. This magnetic force component makes it possible to eventually reduce the particle's speed of travel to zero and consequently travel in the opposite direction, a distribution of this magnetic field known as a magnetic mirror. If the center B of the magnetic field formed between the cathode inner ring pole shoe and the cathode outer ring pole shoe of the anode layer ion source is B0Magnetic field B at small cathode inner ring pole shoe and cathode outer ring pole shoeMIf the size is large, the magnetic mirror is formed. B isMAnd B0The ratio of (d) is called the magnetic mirror ratio R. The electrons move in the magnetic mirror, and a part of the electrons escape out at all times, the escape proportion is inversely proportional to the magnetic mirror ratio, namely the larger the magnetic mirror ratio is, the smaller the escape proportion of the electrons is, and the calculation formula is as follows:
R=BM/ B0 （1）
F(%)=(1-(1-1/R)1/2)x100 （2）
if the escape proportion of electrons is reduced, the probability of ions colliding with the inner ring and the outer ring of the cathode is greatly reduced, so that the sputtering pollution of the anode layer ion source can be reduced. The structure of the conventional ion source is shown in fig. 1 and 2, B0Is 682 gauss, BM1741 gauss, a magnetoscope ratio of 1.09, and a proportion F (%) of escaped electrons of about 71%. If the magnetic mirror ratio is increased to 5, the proportion F (%) of electrons escaping is reduced to about 11%. That is, a large part of electrons can bounce back at the position of the pole shoe, the potential at the position of the pole shoe is higher than that at the center, and positive ions moving to the position of the pole shoe can be subjected to the thrust action of the positive charges, so that the sputtering of the inner cathode ring and the outer cathode ring can be reduced, and the sputtering pollution is reduced.
Disclosure of Invention
In order to reduce sputtering pollution of the anode layer ion source and prolong maintenance time of the anode layer ion source, the invention simulates and calculates magnetic field distribution of a discharge cavity formed by a cathode inner ring, a cathode outer ring and an anode ring through finite element numerical calculation, and provides the anode layer ion source with a higher magnetic mirror. The main structure comprises: the cooling device comprises an anode ring, a cathode inner ring, a cathode outer ring, a permanent magnet, a magnet yoke, an air supply system, a cooling liquid inlet/outlet pipeline of the anode ring, a cooling liquid inlet/outlet pipeline of the cathode inner ring and a cooling liquid inlet/outlet pipeline of the magnet yoke. The cathode inner ring and the cathode outer ring are oppositely arranged, and a gap between the cathode inner ring and the cathode outer ring is kept constant along the length direction of the ion source. The anode ring is positioned right below the gap between the inner cathode ring and the outer cathode ring, and forms a discharge cavity together with the inner cathode ring and the outer cathode ring. The spacing between the anode ring and the inner and outer cathodes is constant along the length of the ion source. The permanent magnet is positioned in the middle of the anode ring and right below the cathode inner ring, the centers of the permanent magnet and the cathode inner ring are symmetrical, and the magnet yoke is connected with the permanent magnet and the cathode outer ring. The method is characterized in that: the magnetic mirror ratio of the anode layer ion source discharge cavity magnetic field is more than 2; the anode layer ion source discharge cavity is in central symmetry with a magnetic mirror of a magnetic field; the uniformity of the anode layer ion source discharge cavity magnetic field along the length direction of the ion source is within +/-2%; the anode layer ion source is cooled by 3 paths of cooling liquid channels, and the anode ring, the cathode inner ring, the magnet yoke and the permanent magnet are cooled respectively.
Further, the anode layer ion source discharge cavity magnetic field has a magnetic mirror ratio of more than 2, preferably more than 4;
furthermore, the magnetic mirror ratio of the anode layer ion source discharge cavity magnetic field is realized by changing the structures of the cathode inner ring and the cathode outer ring pole shoes, and the structures comprise the taper, the height and the included angle of the cathode inner ring pole shoes and the cathode outer ring pole shoes and the distance between the cathode inner ring and the cathode outer ring.
Furthermore, the cathode inner ring pole shoe and the cathode outer ring pole shoe are preferably opposite single slopes or double slopes, and the single slope means that the cathode inner ring pole shoe and the cathode outer ring pole shoe are inclined from the top surface to the anode ring direction in the vertical direction or inclined from the anode ring to the top surface direction. The double inclined planes mean that the cathode inner ring pole shoe and the cathode outer ring pole shoe are respectively inclined from the top surface and the bottom surface to the middle in the vertical direction.
Furthermore, the included angle between the inclined planes of the cathode inner ring pole shoe and the cathode outer ring pole shoe and the horizontal plane is 30-50oPreferably 35 to 45o。
Further, the anode layer ion source discharge cavity has a magnetic mirror central symmetry of a magnetic field; the ratio of the magnetic field of the cathode inner ring pole shoe to the magnetic field of the cathode outer ring pole shoe is 0.9-1.1, preferably 0.95-1.05.
The anode layer ion source is cooled by 3 paths of cooling liquid channels, and the cooling liquid can be introduced from two ends of the ion source or from the center.
Further, the first cooling channel directly cools the anode ring, the cooling channel is annular, can be directly machined by adopting a hollow pipeline, and can also be machined by adopting a drilling or groove milling and welding mode.
Further, the second cooling channel directly cools the cathode inner ring, and if a cooling liquid is introduced from the middle, the cooling channel must be annular. If the cooling liquid is introduced from both ends, the cooling passage may be a double-groove ring shape or a single-groove type.
Further, the third cooling channel directly cools the yoke, and if the cooling liquid is introduced from the center, the cooling channel must have a ring shape. If the cooling liquid is introduced from both ends, the cooling passage may be a double-grooved ring or a single-grooved strip.
According to the anode layer ion source for reducing sputtering pollution, the magnetic field and the mirror ratio of the discharge cavity formed by the cathode inner ring, the cathode outer ring and the anode ring are high, electrons can be effectively gathered at the beginning of the discharge cavity formed by the cathode inner ring, the cathode outer ring and the anode ring, namely in the ion exit channel, so that the collision of ions on the side walls of the cathode inner ring and the cathode outer ring is effectively reduced, and the sputtering pollution is reduced. Meanwhile, the anode layer ion source is cooled by adopting 3 paths of cooling liquid channels to cool the anode ring, the cathode inner ring and the magnet yoke/permanent magnet respectively, so that the overall cooling effect of the anode layer ion source is improved, and the anode layer ion source can stably work for a longer time. The anode layer ion source discharge cavity is in central symmetry with a magnetic mirror of a magnetic field; the uniformity of the anode layer ion source discharge cavity magnetic field along the length direction of the ion source is within +/-2%, so that the uniformity of the large-size strip ion source is improved.
Drawings
FIG. 1 is a schematic cross-sectional view of a conventional anode layer ion source;
notation in the figure: 1-a cathode inner ring cooling liquid inlet/outlet pipeline; 2-cathode inner ring; 3-the cathode outer ring; 4-a magnetic yoke; 5-arranging a magnet gland; 6-permanent magnet; 7-an anode ring; 8-coolant inlet/outlet pipe of the anode ring; 9-lower magnet holder; 10-rear cover; 11-air homogenizing holes; 12-an air intake; 13-included angle alpha between the inclined plane of the pole shoe and the horizontal plane; 14-cathode inner ring pole shoe; 15-cathode outer ring pole shoe.
FIG. 2 is a schematic diagram of a magnetic field simulation magnetic force line of an ion source discharge chamber of a conventional anode layer;
FIG. 3 is a schematic cross-sectional view of an anode layer ion source according to the present invention;
notation in the figure: 1-a cathode inner ring cooling liquid inlet/outlet pipeline; 2-cathode inner ring; 3-the cathode outer ring; 4-a magnetic yoke; 5-arranging a magnet gland; 6-permanent magnet; 7-an anode ring; 8-coolant inlet/outlet pipe of the anode ring; 9-lower magnet holder; 10-rear cover; 11-yoke coolant in/out pipe; 12-air homogenizing holes; 13-an air intake; 14-the included angle alpha between the inclined plane of the pole shoe and the horizontal plane; 15-cathode inner ring pole shoe; 16-cathode outer ring pole shoe.
FIG. 4 is a schematic diagram of simulated magnetic lines of force of the anode layer ion source discharge chamber magnetic field according to the present invention;
FIG. 5 is a schematic view of simulated magnetic lines of force of the ion source discharge chamber of the anode layer according to another embodiment of the present invention;
FIG. 6 is a simulated ion source temperature profile during 2-pass cooling, in which the coolant line inside the anode ring is of an annular configuration, the coolant line inside the cathode inner ring is of an annular configuration, and the coolant inlet and outlet are at both ends;
fig. 7 is a simulated ion source temperature distribution diagram during 3-channel cooling, in which the cooling liquid pipe inside the anode ring is of an annular structure, the cooling liquid pipes inside the cathode inner ring and the magnet yoke are of an annular structure, and the cooling liquid inlet and outlet are arranged at two ends.
Detailed Description
In order to reduce sputtering pollution of the anode layer ion source and prolong maintenance time of the anode layer ion source, the invention simulates and calculates magnetic field distribution of a discharge cavity formed by a cathode inner ring, a cathode outer ring and an anode ring through finite element numerical calculation, and provides the anode layer ion source with a higher magnetic mirror. As shown in fig. 3, the main structure thereof comprises: the device comprises an anode ring 7, a cathode inner ring 2, a cathode outer ring 3, a permanent magnet 6, a magnet yoke 4, an air supply system (12, 13), a cooling liquid inlet/outlet pipeline 8 of the anode ring, a cooling liquid inlet/outlet pipeline 1 of the cathode inner ring and a cooling liquid inlet/outlet pipeline 11 of the magnet yoke. The cathode inner ring 2 and the cathode outer ring 3 are oppositely arranged, and the gap between the cathode inner ring and the cathode outer ring is kept constant along the length direction of the ion source. The anode ring 7 is positioned right below the gap between the cathode inner ring 2 and the cathode outer ring 3, and forms a discharge cavity together with the inner cathode ring and the outer cathode ring. The distance between the anode ring 7 and the cathode inner ring 2 and the cathode outer ring 3 is kept constant along the length direction of the ion source. The permanent magnet 6 is positioned in the middle of the anode ring 7 and right below the cathode inner ring 2, the centers of the permanent magnet and the cathode inner ring are symmetrical, and the magnet yoke 4 is connected with the permanent magnet 6 and the cathode outer ring 3.
As shown in fig. 2, the magnetic field in the discharge chamber formed by the conventional cathode inner ring 2, the cathode outer ring 3 and the anode ring 7 is a non-uniform magnetic field, and the permanent magnet 6 mainly employs a neodymium iron boron ceramic magnet. Magnetic field intensity B at cathode inner ring pole shoe 14M1741 gauss is adopted, and the magnetic field intensity B at the pole shoe 15 of the outer ring of the cathodeM2750 gauss, central magnetic field intensity B of connecting line of cathode inner ring pole shoe and cathode outer ring pole shoe0682 gauss. Cathode inner ring magnetic mirror ratio BM1/ B0=1.09, cathode outer ring magnetic mirror ratio BM2/ B0= 1.1. Magnetic field intensity ratio B of cathode inner ring pole shoe to cathode outer ring pole shoeM1/ BM2=0.99, this parameter being used to evaluate the magnetic mirror central symmetry of the anode layer ion source discharge chamber magnetic field, the closer this parameter is to 1, the better the central symmetry. The included angle alpha 14 between the inclined surface of the cathode inner ring pole shoe and the horizontal plane and the included angle alpha 14 between the inclined surface of the cathode outer ring pole shoe and the horizontal plane are both 50o. The structure has small magnetic mirror ratio, large electron escape ratio and high sputtering pollution probability.
An embodiment of an anode layer ion source with a cathode inner ring 2 and a cathode outer ring is shown in FIG. 3The magnetic field in the discharge chamber formed by the ring 3 and the anode ring 7 is a non-uniform magnetic field, and a schematic diagram of the simulated magnetic lines of the magnetic field in the discharge chamber is shown in fig. 4. The same permanent magnet as that in FIG. 2 was used for simulation calculation, and the magnetic field strength B at the cathode inner ring pole shoe 15 was measuredM12563 gauss, magnetic field intensity B at the outer ring pole shoe 16 of the cathodeM22668 Gauss, central magnetic field intensity B of connecting line of cathode inner ring pole shoe and cathode outer ring pole shoe0Is 600 gauss. Cathode inner ring magnetic mirror ratio BM1/ B0=4.27, cathode outer ring magnetic mirror ratio BM2/ B0= 4.45. Magnetic field intensity ratio B of cathode inner ring pole shoe to cathode outer ring pole shoeM1/ BM2= 0.96. The included angles alpha 14 between the upper inclined plane and the horizontal plane and between the lower inclined plane and the horizontal plane of the cathode inner ring pole shoe are all 37o(ii) a The included angles alpha 14 between the upper inclined plane and the horizontal plane and between the lower inclined plane and the horizontal plane of the cathode outer ring pole shoe are all 37oAnd the upper and lower slopes are symmetrical up and down, and the heights of the upper and lower slopes are both 6 mm.
The magnetic field in the discharge chamber formed by the cathode inner ring 2, the cathode outer ring 3 and the anode ring 7 of the anode layer ion source provided by the invention is a non-uniform magnetic field, and the schematic diagram of the simulated magnetic lines of the magnetic field in the discharge chamber is shown in fig. 5. Magnetic field intensity B at cathode inner ring pole shoe 15M11547 Gauss, and the magnetic field intensity B at the cathode outer ring pole shoe 16M2The central magnetic field intensity B of the connecting line of the cathode inner ring pole shoe and the cathode outer ring pole shoe is 1589 gausses0Is 740 gauss. Cathode inner ring magnetic mirror ratio BM1/ B0=2.09, cathode outer ring magnetic mirror ratio BM2/ B0= 2.18. Magnetic field intensity ratio B of cathode inner ring pole shoe to cathode outer ring pole shoeM1/ BM2= 0.97. The included angles alpha 14 between the upper inclined plane and the horizontal plane and between the lower inclined plane and the horizontal plane of the cathode inner ring pole shoe are all 50o(ii) a The included angles alpha 14 between the upper inclined plane and the horizontal plane and between the lower inclined plane and the horizontal plane of the cathode outer ring pole shoe are all 50oAnd the upper and lower parts are asymmetric, the height of the upper inclined plane is 9.5mm, and the height of the lower inclined plane is 2.5 mm.
Fig. 6 shows the simulation result of the temperature distribution introduced from the two ends of the ion source by the cooling liquid inlet/outlet pipe 8 with the annular structure arranged inside the anode ring 7 of the conventional ion source and the cooling liquid inlet/outlet pipe 4 with the elongated structure arranged inside the cathode inner ring 2. As can be seen from the figure, the cooling effect of the cathode outer ring 3, the yoke, and the permanent magnet region is not significant, and the temperature is high. The high temperature can lead the magnetism of the ceramic permanent magnet to change, thereby influencing the magnetic field distribution in the discharge cavity and influencing the magnetic mirror ratio. The yoke must be cooled to maintain the permanent magnets within a substantially constant temperature range. The invention provides an anode layer ion source, which comprises 3 paths of cooling liquid channels for respectively cooling an anode ring, a cathode inner ring, a magnetic yoke and a permanent magnet. The first cooling channel 8 directly cools the anode ring, the cooling channel is annular, can be directly formed by processing a hollow pipeline, and can also be obtained by processing in a drilling or groove milling and welding mode. The second cooling channel 1 cools the cathode inner ring directly, which cooling channel must be annular if cooling liquid is introduced from the middle. If the cooling liquid is introduced from both ends, the cooling passage may be a double-groove ring shape or a single-groove type. The third cooling channel 11 cools the yoke directly, and if a cooling liquid is introduced from the middle, the cooling channel must be annular. If the cooling liquid is introduced from both ends, the cooling passage may be a double-grooved ring or a single-grooved strip.
Fig. 7 shows a simulation result of temperature distribution introduced from two ends of the ion source by the cooling liquid inlet/outlet pipe 8 with a ring structure in the ring of the anode ring 7 of the ion source, the cooling liquid inlet/outlet pipe 4 with a ring structure in the cathode inner ring 2, and the cooling liquid channel 11 with a ring structure in the yoke. As can be seen, the ion source of the anode layer is in a good cooling state, and the temperature of the permanent magnet does not rise obviously.
According to the anode layer ion source for reducing sputtering pollution, the magnetic field and the mirror ratio of the discharge cavity formed by the cathode inner ring, the cathode outer ring and the anode ring are high, electrons can be effectively gathered at the beginning of the discharge cavity formed by the cathode inner ring, the cathode outer ring and the anode ring, namely in the ion exit channel, so that the collision of ions on the side walls of the cathode inner ring and the cathode outer ring is effectively reduced, and the sputtering pollution is reduced. Meanwhile, the anode layer ion source is cooled by adopting 3 paths of cooling liquid channels to cool the anode ring, the cathode inner ring and the magnet yoke/permanent magnet respectively, so that the overall cooling effect of the anode layer ion source is improved, and the anode layer ion source can stably work for a longer time. The anode layer ion source discharge cavity is in central symmetry with a magnetic mirror of a magnetic field; the uniformity of the anode layer ion source discharge cavity magnetic field along the length direction of the ion source is within +/-2%, so that the uniformity of the large-size strip ion source is improved.
The above description is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any modifications and substitutions based on the technical solutions provided by the present invention and the concept of the present invention should be covered within the scope of the present invention.

Claims (10)

1. An anode layer ion source for reducing sputtering pollution, the main structure of which comprises: the device comprises an anode ring, a cathode inner ring, a cathode outer ring, a permanent magnet, a magnet yoke, an air supply system, a cooling liquid inlet/outlet pipeline of the anode ring, a cooling liquid inlet/outlet pipeline of the cathode inner ring and a cooling liquid inlet/outlet pipeline of the magnet yoke; the method is characterized in that: the magnetic field-mirror ratio of a discharge cavity consisting of the anode ring, the cathode inner ring and the cathode outer ring of the anode layer ion source is more than 2; the anode layer ion source discharge cavity is in central symmetry with a magnetic mirror of a magnetic field; the uniformity of the anode layer ion source discharge cavity magnetic field along the length direction of the ion source is within +/-2%; the anode layer ion source is cooled by 3 paths of cooling liquid channels, and the anode ring, the cathode inner ring, the magnet yoke and the permanent magnet are cooled respectively.
2. An anode layer ion source for reducing sputter contamination according to claim 1 having a magnetic mirror ratio of the magnetic field of the discharge chamber of greater than 2, preferably greater than 4.
3. The anode layer ion source for reducing sputtering pollution, according to claim 1, wherein the magnetic mirror ratio of the discharge cavity magnetic field of the anode layer ion source is realized by changing the structure of the cathode inner ring pole shoe and the cathode outer ring pole shoe, wherein the structure comprises the taper, the height and the included angle of the cathode inner ring pole shoe and the cathode outer ring pole shoe and the distance between the cathode inner ring and the cathode outer ring.
4. The anode layer ion source for reducing sputtering pollution according to claim 1, wherein the cathode inner ring pole shoe and the cathode outer ring pole shoe are preferably opposite single slopes or double slopes, and the single slopes mean that the cathode inner ring pole shoe and the cathode outer ring pole shoe are inclined in a vertical direction from the top surface to the anode ring direction or inclined in a vertical direction from the anode ring to the top surface; the double inclined planes mean that the cathode inner ring pole shoe and the cathode outer ring pole shoe are respectively inclined from the top surface and the bottom surface to the middle in the vertical direction.
5. The anode layer ion source for reducing sputtering contamination as claimed in claim 1, wherein the inclined planes of the cathode inner ring pole shoe and the cathode outer ring pole shoe form an included angle of 30-50 degrees with the horizontal planeoPreferably 35 to 45o。
6. The anode layer ion source of claim 1, having a magnetic mirror centered magnetic field of a discharge chamber of the anode layer ion source for reducing sputter contamination; the ratio of the magnetic field of the cathode inner ring pole shoe to the magnetic field of the cathode outer ring pole shoe is 0.9-1.1, preferably 0.95-1.05.
7. The anode layer ion source for reducing sputtering contamination as claimed in claim 1, wherein the anode layer ion source is cooled by a total of 3 cooling liquid channels, and the cooling liquid can be introduced from both ends of the source or from the center.
8. The anode layer ion source for reducing sputtering contamination according to claim 7, wherein the first cooling channel directly cools the anode ring, and the cooling channel is annular and can be directly machined by a hollow pipe or can be machined by drilling or milling a groove and welding.
9. The anode layer ion source of claim 7, wherein the second cooling channel directly cools the inner ring of the cathode, and if the cooling liquid is introduced from the middle, the cooling channel must be annular; if the cooling liquid is introduced from both ends, the cooling passage may be a double-groove ring shape or a single-groove type.
10. The anode layer ion source of claim 7, wherein the third cooling channel directly cools the yoke, and if the cooling liquid is introduced from the middle, the cooling channel has to be ring-shaped; if the cooling liquid is introduced from both ends, the cooling passage may be a double-grooved ring or a single-grooved strip.
CN202011593701.2A 2020-12-29 2020-12-29 Anode layer ion source for reducing sputtering pollution Withdrawn CN112575306A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114302546A (en) * 2021-12-08 2022-04-08 核工业西南物理研究院 High-efficiency low-pollution plasma source

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050247885A1 (en) * 2003-04-10 2005-11-10 John Madocks Closed drift ion source
CN109065429A (en) * 2018-08-10 2018-12-21 成都极星等离子科技有限公司 A kind of ion source reducing electron escape rate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050247885A1 (en) * 2003-04-10 2005-11-10 John Madocks Closed drift ion source
CN109065429A (en) * 2018-08-10 2018-12-21 成都极星等离子科技有限公司 A kind of ion source reducing electron escape rate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114302546A (en) * 2021-12-08 2022-04-08 核工业西南物理研究院 High-efficiency low-pollution plasma source
CN114302546B (en) * 2021-12-08 2023-10-20 核工业西南物理研究院 High-efficiency low-pollution plasma source

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Application publication date: 20210330