CN112573476B - MEMS sensor with adjustable sensitivity and bandwidth - Google Patents
MEMS sensor with adjustable sensitivity and bandwidth Download PDFInfo
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- CN112573476B CN112573476B CN202011463363.0A CN202011463363A CN112573476B CN 112573476 B CN112573476 B CN 112573476B CN 202011463363 A CN202011463363 A CN 202011463363A CN 112573476 B CN112573476 B CN 112573476B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
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Abstract
The invention belongs to the technical field of micro-electromechanical systems, and discloses a MEMS sensor with adjustable sensitivity and bandwidth, which comprises a sensitive module and a detection module, wherein the sensitive module comprises a negative stiffness structure and a stable structure; the negative stiffness structure is used for reducing the effective stiffness of the MEMS sensor and improving the sensitivity of device detection; the stabilizing structure is used for stabilizing the negative stiffness structure and realizing the adjustability of the total effective stiffness of the MEMS sensor. The stabilizing structure includes a first stabilizing electrode and a second stabilizing electrode, and stabilization of the negative stiffness structure is achieved by applying an alternating voltage across the first stabilizing electrode and the second stabilizing electrode to induce high frequency vibrations. The overall effective stiffness of the MEMS sensor is changed by changing the amplitude and frequency of the ac voltage, thereby changing the sensitivity of the sensor. The bandwidth of the MEMS sensor can be adjusted by adjusting the amplitude and frequency of the ac voltage.
Description
Technical Field
The invention belongs to the technical field of micro-electromechanical systems, and particularly relates to a MEMS sensor with adjustable sensitivity and bandwidth.
Background
The resonant accelerometer designed in the prior art 1 utilizes first-order electrostatic negative stiffness generated by electrostatic force between a group of parallel plate electrodes and an accelerometer test mass, reduces mechanical stiffness of the whole accelerometer structure, improves sensitivity, and is used for adjusting accelerometer stress balance. The design needs extremely high voltage to effectively reduce the rigidity of the device, realize higher sensitivity improvement and have poor regulation and control.
In the prior art 2, a parametric modulation method is used to control the coupling strength between two resonators, so as to improve the sensitivity and resolution of the accelerometer. The purpose of the parametric modulation here is to control the coupling strength between the resonators with a high frequency ac voltage.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide the MEMS sensor with adjustable sensitivity and bandwidth, which aims to stabilize a negative stiffness structure and realize real-time adjustable sensitivity and bandwidth of a device.
The invention provides a MEMS sensor with adjustable sensitivity and bandwidth, which comprises a sensitive module and a detection module, wherein the sensitive module comprises a negative stiffness structure and a stable structure; the negative stiffness structure is used for reducing the effective stiffness of the MEMS sensor and improving the sensitivity of device detection; the stabilizing structure is used for stabilizing the negative stiffness structure and realizing the adjustability of the total effective stiffness of the MEMS sensor.
Still further, the stabilizing structure comprises: and a first stabilizing electrode and a second stabilizing electrode, wherein the stabilization of the negative stiffness structure is realized by applying an alternating voltage to the first stabilizing electrode and the second stabilizing electrode to induce high-frequency vibration.
Still further, the negative stiffness structure comprises a first negative stiffness electrode N1 and a second negative stiffness electrode N2, said first negative stiffness electrode N1 and said second negative stiffness electrode N2 introducing an electrostatic negative stiffness in the accelerometer by means of electrostatic forces.
Still further, the sensing module further includes a first displacement control electrode D1 and a second displacement control electrode D2, and the first displacement control electrode D1 and the second displacement control electrode D2 control the displacement of the detection mass by electrostatic force.
Still further, the negative stiffness structure includes a first negative stiffness arched beam C1 and a second negative stiffness arched beam C2, the first negative stiffness arched beam C1 and the second negative stiffness arched beam C2 arched beams inducing a negative stiffness in the accelerometer by buckling.
Further, an alternating voltage of frequency f and amplitude Vp is applied to the first and second stabilization electrodes.
Further, the magnitude of the frequency f of the ac voltage Vp depends on the magnitude of the negative stiffness introduced by the negative stiffness structure and the sensor sensitivity and bandwidth requirements of the actual application.
Wherein the sensitivity of the sensitive structure of the MEMS sensor is changed by adjusting the amplitude Vp and the frequency f of the alternating voltage. The bandwidth of the MEMS sensor is adjusted by adjusting the amplitude Vp and the frequency f of the ac voltage.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
(1) The prior art utilizes a negative stiffness structure to reduce the positive stiffness of the mechanical structure of the MEMS device. Because of processing errors, the negative rigidity structure is not matched with the positive rigidity and the negative rigidity, and the system is easy to be unstable, the invention introduces high-frequency oscillation on the basis of the negative rigidity structure according to the stability principle similar to Kapitza pendulum, so that the negative rigidity structure is kept in a stable state.
(2) The high-frequency oscillation negative stiffness MEMS sensor is added, so that the sensitivity of the device can be regulated and controlled in real time by adjusting the voltage amplitude and frequency of the high-frequency oscillation according to the actual application requirements.
(3) The negative stiffness MEMS sensor based on high-frequency oscillation can change the voltage amplitude and frequency of the high-frequency oscillation and can realize bandwidth adjustment.
Drawings
FIG. 1 is a schematic diagram of a resonant accelerometer according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a potential energy displacement curve of a resonant accelerometer according to an embodiment of the invention;
FIG. 3 is a schematic diagram of an amplitude-frequency response curve of a resonant accelerometer according to an embodiment of the present invention when different frequencies of AC voltages are stable;
FIG. 4 is a schematic diagram of a capacitive accelerometer according to the principles of the present invention;
wherein M is a test mass, L1, L2, L3 and L4 are respectively four micro-lever structures, R1 and R2 are respectively two resonator beams, S1, S2, S3 and S4 are respectively four cantilever beams, N1 and N2 are a group of negative stiffness electrodes, D1 and D2 are a group of displacement control electrodes, and W1 and W2 are a group of stable electrodes; a1, A2, A3, A4, A5, A6, A7, A8, A9, a10, a11, a12, a13, a14, a15, a16 are anchor points for securing the device to the substrate, wherein A1, A3, A4, A5, A7, A9, a11, a12, a13, a15 secure the micro-lever, resonator, and cantilever to the substrate; the negative stiffness electrode is fixed on the substrate through anchor points A16 and A8; the displacement control electrode is fixed on the substrate through anchor points A2 and A6; the stabilization electrode is fixed with a10, a 14.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The invention provides a design and realization method of a MEMS sensor with adjustable sensitivity and bandwidth, which is characterized in that on the basis of negative rigidity, a high-frequency oscillation is introduced to stabilize a system; the design provides a novel method for stabilizing the negative stiffness structure, namely, on the basis of the negative stiffness structure, the negative stiffness structure is in a stable state by introducing high-frequency oscillation according to a stability principle similar to Kapitza pendulum; the MEMS sensor designed by the method not only has adjustable sensitivity, but also can realize adjustable bandwidth.
The MEMS sensor with adjustable sensitivity and bandwidth comprises a sensitive module and a detection module; the sensing module is used for sensing displacement signals or force signals input from the outside; the detection module is used for converting the signals sensed by the sensing module into electric signals and outputting the electric signals; the sensitive module comprises a negative stiffness structure and a stabilizing structure; the negative stiffness structure is used for reducing the effective stiffness of the MEMS sensor and improving the sensitivity of device detection; the stabilizing structure is used for stabilizing the negative stiffness structure and realizing the adjustability of the total effective stiffness of the MEMS sensor. The effective rigidity is the sum of the mechanical positive rigidity and the negative rigidity of the sensor, in order to prevent the unstable negative rigidity introduced by the negative rigidity structure, the effective rigidity of the whole system is negative due to the positive rigidity exceeding the system, so that the whole system is unstable, and the stable structure is introduced by the invention, and the smaller the rigidity is, the higher the sensitivity is, and the smaller the bandwidth is at the same time, because the sensitivity and the rigidity are in inverse proportion. Therefore, the invention realizes the effective regulation and control of the sensitivity and the bandwidth of the MEMS sensor through the adjustment of the effective rigidity of the stabilized system.
In an embodiment of the present invention, the stabilizing structure includes: and a first stabilizing electrode and a second stabilizing electrode, wherein the stabilizing electrode is applied with alternating voltage to introduce high-frequency vibration so as to realize the stabilization of the negative stiffness structure. Specifically, an alternating voltage with a frequency f and a magnitude Vp may be applied to the first and second stabilization electrodes; the magnitude of the frequency f of the alternating voltage Vp depends on the magnitude of the negative stiffness introduced by the negative stiffness structure and the sensitivity and bandwidth requirements of the sensor in practical use. By adjusting the amplitude Vp and frequency f of the ac voltage, the sensitivity of the sensitive structure of the MEMS sensor can be changed and the bandwidth of the MEMS sensor can be adjusted.
The MEMS sensor with adjustable sensitivity and bandwidth provided by the invention comprises: capacitive accelerometers, magnetometers, pressure gauges, and other force or displacement based sensors that employ negative stiffness structures.
For further explanation of the MEMS sensor with adjustable sensitivity and bandwidth provided by the embodiments of the present invention, the following details will be described with reference to the accompanying drawings and with reference to specific examples:
fig. 1 shows a specific structure of a resonant accelerometer, which is a MEMS sensor based on force sensing and provided in a first embodiment of the present invention, and includes a sensing module and a detection module. The detection module adopts a resonator as a detection device, and the sensitive module comprises a detection mass M, a first displacement control electrode D1, a second displacement control electrode D2, a first negative stiffness electrode N1, a second negative stiffness electrode N2, a first stable electrode W1 and a second stable electrode W2. Wherein the first negative stiffness electrode N1 and the second negative stiffness electrode N2 introduce electrostatic negative stiffness into the accelerometer by electrostatic force; the first displacement control electrode D1 and the second displacement control electrode D2 control the displacement of the detection mass by electrostatic force; the first stabilizing electrode W1 and the second stabilizing electrode W2 generate high-frequency vibration by applying an alternating voltage, stabilizing the negative stiffness introduced by the negative stiffness electrode.
Fig. 4 shows a specific structure of a capacitive negative stiffness accelerometer, which is a MEMS sensor based on displacement sensing and provided by a second embodiment of the present invention, and includes a sensing module and a detection module. The detection module specifically adopts a capacitive displacement detection mode, and the sensitive module specifically comprises a detection mass M, a first negative stiffness arched beam C1, a second negative stiffness arched beam C2, a first stable electrode W1 and a second stable electrode W2; wherein the first and second negative stiffness arched beams C1, C2 introduce a negative stiffness in the accelerometer by buckling; the first stabilizing electrode W1 and the second stabilizing electrode W2 generate high-frequency vibration by applying an alternating voltage, stabilizing the negative stiffness introduced by the negative stiffness electrode.
The invention has the principle of adjustable sensitivity and bandwidth and the specific implementation method as follows:
the structure of the electrostatic negative stiffness resonant accelerometer is shown in fig. 1, and comprises a traditional resonant accelerometer structure, a group of negative stiffness comb teeth electrodes and a group of displacement control electrodes; when no voltage is applied to each electrode, the accelerometer is a traditional resonant accelerometer, and the accelerometer system is in a balanced position.
The anchor points A1, A3, A4, A5, A7, A9, A11, A12, A13 and A15 are used for fixing the micro-lever, the resonator and the cantilever beam on the substrate; the first negative stiffness electrode N1 and the second negative stiffness electrode N2 are fixed on the substrate through anchor points A16 and A8; the first displacement control electrode D1 and the second displacement control electrode D2 are fixed on the substrate through anchor points A2 and A6; the first stabilizing electrode W1 and the second stabilizing electrode W2 are fixed on the substrate by anchor points a10 and a 14.
When the direct current voltage V1 is applied to the first negative stiffness electrode N1 and the second negative stiffness electrode N2, the direct current voltage V2 is applied to the first displacement control electrode D1 and the second displacement control electrode D2, and the bias voltage V4 is applied to the test mass, the resonant accelerometer with the electrostatic negative stiffness structure is obtained.
Since the positive stiffness of the accelerometer mechanical structure produces a mechanical restoring force that pulls the system back to the equilibrium position, while the electrostatic force is an attractive force that deflects the accelerometer system from the equilibrium position, the electrostatic force produces a negative stiffness as opposed to a positive mechanical stiffness. The negative stiffness structure may also be implemented with arched beams, such as the capacitive negative stiffness accelerometer shown in FIG. 4. When the static negative stiffness is greater than the mechanical positive stiffness, the stiffness of the whole system is negative, and the potential energy curve is in an unstable state as shown by the broken line in fig. 2. An alternating voltage with frequency f and amplitude Vp is applied to the stabilizing electrodes W1 and W2 by applying a working principle similar to Kapitza pendulum, and high-frequency vibration is introduced.
In the embodiment of the invention, the amplitude Vp and the frequency f of the alternating voltage depend on the magnitude of the negative stiffness introduced by the negative stiffness structure, and are generally 1-5 v,5 Hz-100 Hz, depending on the quality of the test and the magnitude of the voltages applied to the respective electrodes.
At this time, the potential energy curve of the system is shown by a solid line in fig. 2, and the potential energy has a minimum value and is in a steady state in a displacement section around the minimum value.
As shown in fig. 3, the frequency f of the ac voltage is changed, and the resonant frequency of the system is changed. Adjusting the amplitude Vp of the ac voltage can also adjust the bandwidth of the system. Therefore, the resonant accelerometer designed by utilizing the principle of the invention not only has a stable and controllable negative stiffness structure, but also has adjustable bandwidth.
The invention can also be used in sensors such as a negative stiffness capacitance accelerometer, a magnetometer and the like, a stable electrode is added, and corresponding alternating voltage is applied to the stable electrode, so that the effect of stabilizing a negative stiffness structure can be achieved, and the sensitivity and the bandwidth can be adjusted according to the actual application requirement. When the resonant accelerometer works with quasi-zero stiffness, the sensitivity is greatly improved, and the system can be in stable quasi-zero stiffness by adjusting the amplitude and frequency of alternating voltage on the stable electrode, so that the sensitivity is improved. If the sensitivity requirement of the actual application on the sensor is not high and the requirement on the bandwidth is high, the alternating voltage on the stable electrode can be regulated, the bandwidth of the sensor is changed, and the bandwidth requirement of the actual application is met. As shown in fig. 4, a capacitive accelerometer is provided that utilizes high frequency oscillations to stabilize a negative stiffness arched beam. The method of sensitivity and bandwidth regulation is similar to the resonant accelerometer described above.
It will be readily appreciated by those skilled in the art that the foregoing description is merely a preferred embodiment of the invention and is not intended to limit the invention, but any modifications, equivalents, improvements or alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (6)
1. The MEMS sensor with adjustable sensitivity and bandwidth is characterized by comprising a sensitive module and a detection module, wherein the sensitive module comprises a negative stiffness structure and a stable structure; the negative stiffness structure is used for reducing the effective stiffness of the MEMS sensor and improving the sensitivity of device detection; the stabilizing structure is used for stabilizing the negative stiffness structure and realizing the adjustability and control of the total effective stiffness of the MEMS sensor;
the stabilizing structure comprises: a first stabilizing electrode and a second stabilizing electrode, wherein high-frequency vibration is introduced by applying alternating voltage to the first stabilizing electrode and the second stabilizing electrode to realize the stabilization of the negative stiffness structure;
the negative stiffness structure comprises a first negative stiffness electrode and a second negative stiffness electrode, wherein the first negative stiffness electrode and the second negative stiffness electrode introduce electrostatic negative stiffness into the accelerometer through electrostatic force;
the sensing module further comprises a first displacement control electrode and a second displacement control electrode, and the first displacement control electrode and the second displacement control electrode control the displacement of the detection mass through electrostatic force.
2. A MEMS sensor as claimed in claim 1 wherein the negative stiffness structure comprises a first negative stiffness arched beam and a second negative stiffness arched beam, the first negative stiffness arched beam and the second negative stiffness arched beam inducing a negative stiffness in the accelerometer by buckling.
3. The MEMS sensor of claim 1, wherein an alternating voltage of frequency f and amplitude Vp is applied across the first and second stabilizing electrodes.
4. A MEMS sensor according to claim 3, wherein the frequency magnitude of the ac voltage is dependent upon the magnitude of the negative stiffness introduced by the negative stiffness structure and the actual sensor sensitivity and bandwidth requirements.
5. The MEMS sensor of any one of claims 1-4, wherein the sensitivity of the sensitive structure of the MEMS sensor is altered by adjusting the amplitude and frequency of the ac voltage.
6. The MEMS sensor of any of claims 1-4, wherein the bandwidth of the MEMS sensor is adjusted by adjusting the amplitude and frequency of the ac voltage.
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| CN113406357B (en) * | 2021-06-22 | 2022-05-27 | 浙江大学 | Micro-mechanical accelerometer and calibration compensation method thereof |
| CN116735911B (en) * | 2023-08-15 | 2023-11-28 | 浙江大学 | Quasi-zero stiffness MEMS accelerometer based on lever type electrostatic comb tooth design |
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