CN112563184A - Bearing device and semiconductor process equipment - Google Patents
Bearing device and semiconductor process equipment Download PDFInfo
- Publication number
- CN112563184A CN112563184A CN202110176702.5A CN202110176702A CN112563184A CN 112563184 A CN112563184 A CN 112563184A CN 202110176702 A CN202110176702 A CN 202110176702A CN 112563184 A CN112563184 A CN 112563184A
- Authority
- CN
- China
- Prior art keywords
- bearing
- carrying
- carrier
- platform
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Abstract
The invention provides a bearing device for semiconductor process equipment, which comprises a first bearing platform and a second bearing platform arranged around the first bearing platform, wherein the first bearing platform is provided with a first bearing surface, the second bearing platform is provided with a second bearing surface, the first bearing surface and the second bearing surface jointly form a bearing surface of the bearing device for bearing a workpiece to be processed, the bearing device also comprises a position adjusting assembly, and the position adjusting assembly can drive at least one of the first bearing platform and the second bearing platform to move along the axial direction of the bearing device so as to adjust the relative position of the first bearing surface and the second bearing surface in the axial direction of the bearing device. The bearing device provided by the invention can realize the adsorption of the warped wafer by adjusting the relative height between the first bearing platform and the second bearing platform, and can also be used for flattening the warped wafer, so that the utilization rate of the warped wafer is improved, and the productivity of a semiconductor process is further improved. The invention also provides semiconductor process equipment.
Description
Technical Field
The invention relates to the field of semiconductor process equipment, in particular to a bearing device for semiconductor process equipment and the semiconductor process equipment.
Background
Plasma equipment is widely used in the field of equipment manufacturing of semiconductors, solar cells, flat panel displays and the like, and in the current plasma equipment, an Electrostatic Chuck (ESC) is generally used for clamping a wafer (wafer) in a process instead of an original mechanical Chuck. The electrostatic chuck has the characteristics of high wafer utilization rate, less possibility of generating particles, more uniform edge etching and deposition rate and the like, and is widely applied to Integrated Circuit (IC) manufacturing equipment (such as plasma Etching (ETCH) equipment, Physical Vapor Deposition (PVD) equipment, Chemical Vapor Deposition (CVD) equipment and the like) so as to prevent the wafer in the IC manufacturing equipment from moving or dislocating in the process, provide radio frequency bias for the wafer and control the temperature of the surface of the wafer.
The same wafer usually undergoes tens to hundreds of processes in the semiconductor process, and after the wafer undergoes a plurality of different processes, a plurality of materials of different materials are gradually deposited on the surface of the wafer, and the wafer is often warped due to the accumulation of the internal stress of the materials. Generally, the wafer is gradually adsorbed by the electrostatic chuck within a certain period of time, gradually deformed, leveled to be completely flat, and attached to the surface of the electrostatic chuck. However, with the progress of semiconductor technology, the internal stress of the material is increased more and more, the warpage amount of the wafer can be gradually increased to the range of 1 mm-2 mm or even more, and the wafer is difficult to be leveled by the existing electrostatic chuck through electrostatic adsorption force. Therefore, how to provide an electrostatic chuck capable of adsorbing a wafer with a high warpage is a technical problem to be solved in the art.
Disclosure of Invention
The invention aims to provide a bearing device for semiconductor processing equipment and the semiconductor processing equipment, wherein the bearing device can adsorb a warped wafer.
As an aspect of the present invention, a carrying device for semiconductor processing equipment is provided, where the carrying device includes a first carrying platform and a second carrying platform disposed around the first carrying platform, the first carrying platform has a first carrying surface, the second carrying platform has a second carrying surface, and the first carrying surface and the second carrying surface together form a carrying surface of the carrying device for carrying a workpiece to be processed, and the carrying device further includes a position adjusting assembly, and the position adjusting assembly can drive at least one of the first carrying platform and the second carrying platform to move along an axial direction of the carrying device, so as to adjust a relative position of the first carrying surface and the second carrying surface in the axial direction of the carrying device.
Optionally, the position adjustment assembly includes a driving mechanism and a fixing structure, the fixing structure is used for fixing one of the first bearing table and the second bearing table in a process chamber of the semiconductor processing equipment, and the driving mechanism can drive the other one of the first bearing table and the second bearing table to move along a direction perpendicular to the bearing surface.
Optionally, the bearing device further comprises an inner cooling assembly and an outer cooling assembly, the inner cooling assembly is arranged on the bottom surface of the first bearing table and used for cooling the first bearing table, and the outer cooling assembly is arranged on the bottom surface of the second bearing table and used for cooling the second bearing table.
Optionally, an inner ring electrode is disposed in the first bearing table, and an outer ring electrode is disposed in the second bearing table.
Optionally, a projected area of the inner ring electrode on the first bearing surface of the first bearing table is equal to a projected area of the outer ring electrode on the second bearing surface of the second bearing table.
Optionally, the first bearing table and the second bearing table are made of ceramic materials.
Optionally, the second bearing platform comprises a plurality of sub bearing platforms surrounding the first bearing platform, each sub bearing platform is provided with a sub bearing surface, and the sub bearing surfaces of the sub bearing platforms form a second bearing surface of the second bearing platform.
As a second aspect of the present invention, there is provided a semiconductor processing apparatus, comprising a process chamber and a carrying device disposed in the process chamber, wherein the carrying device is the carrying device described above.
Optionally, the semiconductor processing equipment further includes a control device, the control device is configured to control the position adjustment assembly to adjust a relative position between the first susceptor and the second susceptor when one of the first susceptor and the second susceptor of the second susceptor does not contact a wafer loaded on the susceptor, and control the position adjustment assembly to make the first susceptor of the first susceptor flush with the second susceptor of the second susceptor after the first susceptor of the first susceptor and the second susceptor of the second susceptor both contact the wafer.
Optionally, the position adjusting assembly includes a driving mechanism and a fixing structure, the fixing structure is used for fixing the second bearing table in the process chamber, and the driving mechanism can drive the first bearing table to move along a direction perpendicular to the bearing surface;
the control device is used for controlling the driving mechanism to drive the first bearing platform to move when one of the first bearing surface of the first bearing platform and the second bearing surface of the second bearing platform is not contacted with the wafer borne on the bearing device, and controlling the driving mechanism to drive the first bearing platform to move to the first bearing surface of the first bearing platform and the second bearing surface of the second bearing platform to be flush with the second bearing surface of the second bearing platform after the first bearing surface of the first bearing platform and the second bearing surface of the second bearing platform are contacted with the wafer.
In the bearing device and the semiconductor process equipment provided by the invention, the bearing device can adsorb the warped wafer by adjusting the relative height between the first bearing table and the second bearing table, and can be used for leveling the warped wafer, so that the utilization rate of the warped wafer is improved, and the productivity of the semiconductor process is further improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic structural diagram of a carrying device according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a carrier according to another embodiment of the present invention;
FIG. 3 is a schematic view of a process of adsorbing a center-raised wafer by the carrier according to an embodiment of the present invention;
fig. 4 is a schematic process diagram of the wafer with a central depression being adsorbed by the carrier according to the embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
The adsorption function of the electrostatic chuck is mainly realized by coulomb attraction generated between positive electricity or negative electricity on an electrode of the electrostatic chuck and negative electricity or positive electricity on the lower surface of a wafer, and coulomb force is proportional to the charge quantity of the electrostatic chuck and the surface of the wafer and inversely proportional to the square of the distance between the charges, so when the warped wafer is pulled to be larger than the distance between most regions of the lower surface of the wafer and the electrode of the electrostatic chuck, the coulomb force between the regions and the electrostatic chuck is sharply reduced, and the electrostatic chuck cannot adsorb the wafer smoothly.
In order to solve the above technical problems, as an aspect of the present invention, a carrying apparatus for semiconductor processing equipment is provided, as shown in fig. 1, the carrying apparatus includes a first carrying stage 10 and a second carrying stage 20 disposed around the first carrying stage 10, the first carrying stage 10 has a first carrying surface, the second carrying stage 20 has a second carrying surface, and the first carrying surface of the first carrying stage 10 and the second carrying surface of the second carrying stage 20 together form a carrying surface for carrying a workpiece to be processed, the carrying apparatus further includes a position adjusting assembly, and the position adjusting assembly can drive at least one of the first carrying stage 10 and the second carrying stage 20 to move along an axial direction of the carrying apparatus (i.e. a direction perpendicular to the carrying surface) so as to adjust a relative position of the first carrying surface and the second carrying surface in the axial direction of the carrying apparatus.
It should be noted that the posture of each susceptor in the drawings in the present specification is the state of each susceptor in normal use, the bearing surface of each susceptor in the drawings is the upward surface of each susceptor in the drawings, and the axial direction (the direction perpendicular to the bearing surface) of the bearing device means the height direction of each susceptor in normal arrangement in the process chamber.
The inventor of the present invention found in experimental studies that the case where the distance between the warped wafer and the electrostatic chuck electrode is excessively large generally occurs in the center or edge region of the electrostatic chuck. For example, a center-raised wafer, where the distance between the center region and the center region of the electrostatic chuck is too large, and a center-recessed wafer, where the distance between the edge region and the edge region of the electrostatic chuck is too large. Therefore, in the embodiment of the present invention, the carrying device includes a first carrying platform 10, a second carrying platform 20 surrounding the first carrying platform 10, and a position adjusting assembly capable of adjusting the relative heights of the first carrying platform 10 and the second carrying platform 20, so that when a warped wafer is carried on the carrying device, the relative heights of the first carrying platform 10 and the second carrying platform 20 can be adjusted, and one of the first carrying platform 10 and the second carrying platform 20 which is far away from the wafer is close to the wafer, so as to ensure that the carrying platform and the wafer have sufficient adsorption force, and then the wafer is leveled by adsorption.
For example, as shown in fig. 3, in a case that the center of the wafer 1 protrudes, if the distance between the first carrier 10 and the central region of the wafer 1 is too large, the relative height between the first carrier 10 and the second carrier 20 can be adjusted by the position adjustment assembly, so that the first carrier 10 rises relative to the second carrier 20 (or the second carrier 20 falls relative to the first carrier 10) and approaches the central region of the wafer 1, so that the first carrier 10 and the second carrier 20 are both in an absorption relationship with the wafer 1, and then the previous positional relationship between the first carrier 10 and the second carrier 20 (i.e. the first carrying surface of the first carrier and the second carrying surface of the second carrier are flush) is slowly recovered to pull the wafer 1 flat;
or, as shown in fig. 4, under the condition that the center of the wafer 1 is recessed, if the distance between the second carrier table 20 and the edge region of the wafer 1 is too large, the relative height between the first carrier table 10 and the second carrier table 20 can be adjusted by the position adjusting assembly, so that the second carrier table 20 is raised relative to the first carrier table 10 and is close to the edge region of the wafer 1, so that the first carrier table 10 and the second carrier table 20 both form an adsorption relationship with the wafer 1, and then the previous position relationship between the first carrier table 10 and the second carrier table 20 is slowly restored, so as to level the wafer 1.
The bearing device provided by the invention can absorb the warped wafer by adjusting the relative height between the first bearing platform 10 and the second bearing platform 20, and can be used for leveling the warped wafer, so that the utilization rate of the warped wafer is improved, and the productivity of a semiconductor process is further improved.
It should be noted that the carrier apparatus provided by the present invention is configured to be disposed in a process chamber of a semiconductor processing apparatus to carry a wafer entering the process chamber, and the position adjustment assembly is configured to connect the first carrier stage 10 and the second carrier stage 20 with a bottom, an inner wall of the process chamber or a liner fixed in position in the process chamber to drive the first carrier stage 10 or the second carrier stage 20 to move relative to the process chamber.
In the embodiment of the present invention, how the position adjustment assembly adjusts the relative position between the first carrier 10 and the second carrier 20 is not specifically limited, for example, the position adjustment assembly may fix the first carrier 10 at the bottom of the process chamber and drive the second carrier 20 to move up and down along the height direction (i.e. the direction perpendicular to the carrier surface); alternatively, the second carrier stage 20 may be fixed at the bottom of the process chamber, and the first carrier stage 10 may be driven to perform a lifting motion along the height direction, specifically:
the position adjustment assembly may include a driving mechanism 50 and a fixing structure 60, the fixing structure 60 is used for fixing one of the first and second stages 10 and 20 in a process chamber of a semiconductor processing apparatus, and the driving mechanism 50 is capable of driving the other one of the first and second stages 10 and 20 to move in a direction perpendicular to the carrying surface.
The embodiment of the present invention does not specifically limit how the driving mechanism 50 drives the plummer to ascend and descend, for example, the driving mechanism 50 may include a driving mechanism such as a linear motor, an air cylinder, or a linear guide moving mechanism disposed below at least one of the first plummer 10 and the second plummer 20.
To facilitate the positioning of the drive mechanism 50 below the carrier table, preferably a fixing structure 60 is used to fix the second carrier table 20 in the process chamber, and the drive mechanism 50 is connected to the first carrier table 10 for driving the first carrier table 10 to move in the axial direction (i.e. height direction) of the carrier device.
In the embodiment of the present invention, the second carrier stage 20 is fixed in the process chamber (for example, fixed on the bottom surface of the chamber, the lining, etc.) by the fixing structure 60, and the first carrier stage 10 is fixed with the bottom surface of the process chamber by one driving mechanism 50, so as to reduce the cost of protecting the precise devices in the driving mechanism while reducing the number of the driving mechanisms 50 and solving the problem that it is difficult to maintain the synchronization among the driving mechanisms required by a plurality of second carrier stages 20, specifically:
the driving mechanism 50 may include a linear motor, a cylinder, or a vertically disposed linear rail and a climbing structure (e.g., a climbing assembly including a gear and a rack) mounted thereon, in which the precision devices are exposed to the plasma environment in the process chamber and are very easily corroded, and therefore, the driving structure below the susceptor needs to be isolated from the process chamber environment by a bellows structure. In the embodiment of the present invention, the second carrier 20 is a fixed member, and only the first carrier 10 needs to move through the driving mechanism 50, so that only a single driving mechanism can be sealed through a bellows (or other structure capable of isolating the environment), thereby reducing the installation cost of the driving mechanism.
The structure of the second carrier 20 is not specifically limited in the embodiment of the present invention, for example, the outer carrier 20 may include a plurality of sub-carriers disposed around the first carrier 10, each sub-carrier has a sub-carrier surface, and the sub-carrier surfaces of the plurality of sub-carriers form the second carrier surface. In order to simplify the power supply circuit of the second carrier, the carrier device preferably includes a second carrier 20, and the second carrier 20 is a ring structure having a ring-shaped second carrier surface and is concentrically disposed around the first carrier 10.
The embodiment of the present invention does not specifically limit how the carrying device adsorbs the wafer, for example, the carrying device may be an electrostatic chuck, the first carrying stage 10 and the second carrying stage 20 may be made of a ceramic material, and the first carrying stage 10 and the second carrying stage 20 are provided with electrodes for adsorbing the wafer by electrostatic, specifically:
when the second carrier table 20 is an annular structure surrounding the first carrier table 10, the first carrier table 10 is provided with an inner ring electrode 11, and the inner ring electrode 11 is used for adsorbing the wafer above the first carrier surface of the first carrier table 10 when an adsorption voltage is applied; the second stage 20 is provided therein with an outer ring electrode 21, and the outer ring electrode 21 is used for attracting the wafer above the second carrying surface of the second stage 20 when the attraction voltage is applied.
In order to improve the uniformity of the wafer stress, it is preferable that the outer ring electrode 21 is also formed in a ring shape and has a shape matching the second bearing surface of the second bearing table 20.
In order to further improve the uniformity of the wafer stress, it is preferable that the projected area of the inner ring electrode 11 on the first carrying surface of the first carrying platform 10 is equal to the projected area of the outer ring electrode 21 on the second carrying surface of the second carrying platform 20. Under ideal conditions, the projected area of the inner ring electrode 11 on the first bearing surface of the first bearing platform 10 should be completely equal to the projected area of the outer ring electrode 21 on the second bearing surface of the second bearing platform 20, and considering the precision of the existing manufacturing process, there may be a slight difference between the projected areas of the inner ring electrode 11 and the outer ring electrode 21, and the threshold of the difference is not specifically limited in the embodiment of the present invention, for example, the preset difference may be 0.1% of the projected area of a single electrode.
When the wafer is adsorbed, the inner ring electrode 11 and the outer ring electrode 21 are loaded with opposite voltages, so that the wafer generates positive charges and negative charges with the same total charge amount in the central area and the edge area respectively. In the embodiment of the present invention, the projection areas of the inner ring electrode 11 and the outer ring electrode 21 on the first bearing surface and the second bearing surface are almost equal (that is, the projection areas of the inner ring electrode 11 and the outer ring electrode 21 on the bearing surface formed by the first bearing surface and the second bearing surface are almost equal), so that the adsorption force generated by each identical area of the inner ring electrode 11 and the outer ring electrode 21 to the wafer is ensured to be equal, and the uniformity of the stress on each part of the wafer is further improved.
When the outer stage 20 includes a plurality of sub-stages surrounding the first stage 10, the outer ring electrode may be divided into a plurality of sub-electrodes correspondingly disposed in the sub-stages, and the sum of the areas of the sub-electrodes is equal to the area of the inner ring electrode.
In order to cool the first and second stages 10 and 20 and prevent the wafer from overheating, as shown in fig. 2, the carrier apparatus may further include an inner cooling assembly 30 and an outer cooling assembly 40, wherein the inner cooling assembly 30 is disposed on a bottom surface of the first stage 10 and is used for cooling the first stage 10, and the outer cooling assembly 40 is disposed on a bottom surface of the second stage 20 and is used for cooling the second stage 20.
When the carrier includes the inner cooling assembly 30 and the outer cooling assembly 40, as shown in fig. 2, the first carrier table 10 may be connected to the driving mechanism 50 through the inner cooling assembly 30, and the second carrier table 20 may be fixed in the process chamber by the fixing structure 60.
As a second aspect of the present invention, a semiconductor processing apparatus is provided, which includes a process chamber and the carrier disposed in the process chamber, wherein the carrier is provided in an embodiment of the present invention.
In the semiconductor process equipment provided by the invention, the bearing device can absorb the warped wafer by adjusting the relative height between the first bearing table 10 and the second bearing table 20, and can be used for leveling the warped wafer, so that the utilization rate of the warped wafer is improved, and the productivity of a semiconductor process is further improved.
For example, as an optional implementation manner of the present invention, the semiconductor processing apparatus further includes a control device, where the control device is configured to control the position adjusting assembly to adjust a relative position between the first carrying platform 10 and the second carrying platform 20 when the carrying surface of one of the first carrying platform 10 and the second carrying platform 20 does not contact the wafer carried on the carrying device, and control the position adjusting assembly to make the first carrying surface of the first carrying platform 10 flush with the second carrying surface of the second carrying platform 20 after both the first carrying platform 10 and the second carrying platform 20 contact the wafer.
The embodiment of the present invention does not specifically limit how the control device determines whether the first carrier stage 10 and the second carrier stage 20 both contact the wafer, for example, a wafer observation assembly may be further disposed in the process chamber, and the control device determines whether the relative position between the carrier stages needs to be adjusted according to an image fed back by the observation assembly. Or, in order to simplify the structure of the device, since the warpage form and warpage rate are generally the same when edge warpage or central protrusion occurs to the same batch of wafers, the adjustment amount required to adjust the relative position of the susceptor can be directly determined according to the warpage condition of the wafer with warpage, specifically:
because a gap exists between the first bearing table 10 and the second bearing table 20, a reaction area for carrying out a semiconductor process in a process chamber can leak gas to an exhaust gas collecting gas circuit through the gap, when a wafer is warped, the coverage degree of the gap is lower than a flat state, so that the difference of gas leakage rates is generated, whether the current wafer is warped or not can be determined by monitoring the change of the air pressure of the chamber through an existing air pressure monitoring assembly in the process chamber (if the gas leakage rate is too high and the air pressure of the chamber is reduced, the wafer is warped or not), and the relative position between the bearing tables is adjusted to the same degree according to the condition of the front warped wafer in the same batch.
When the position adjustment assembly includes the driving mechanism 50 and the fixing structure 60, and the driving mechanism 50 is connected to the first carrier stage 10, the control device is configured to control the driving mechanism 50 to drive the first carrier stage 10 to move when one of the first carrier surface of the first carrier stage 10 and the second carrier surface of the second carrier stage 20 does not contact the wafer carried on the carrier device, and after the first carrier surface of the first carrier stage 10 and the second carrier surface 0 of the second carrier stage 2 both contact the wafer, the driving mechanism 50 is controlled to drive the first carrier stage 10 to move until the first carrier surface of the first carrier stage 10 is flush with the second carrier surface of the second carrier stage 20, specifically:
under the condition that the center of the wafer 1 protrudes, as shown in fig. 3, the control device controls the driving mechanism 50 to drive the first carrier 10 to ascend until the first carrier surface of the first carrier 10 contacts with the wafer 1 and forms an adsorption relationship, and then slowly lowers the first carrier 10 until the first carrier surface of the first carrier 10 is flush with the second carrier surface of the second carrier 20, and flattens the wafer 1;
under the condition that the center of the wafer 1 is recessed, as shown in fig. 4, the control device controls the driving mechanism 50 to drive the first carrier 10 to descend until the second carrier 20 contacts the wafer 1 and forms an absorption relationship, and then slowly raises the first carrier 10 until the first carrying surface of the first carrier 10 is flush with the second carrying surface of the second carrier 20, and flattens the wafer 1.
In the bearing device and the semiconductor process equipment provided by the invention, the bearing device can adsorb the warped wafer by adjusting the relative height between the first bearing table 10 and the second bearing table 20, and can be used for leveling the warped wafer, so that the utilization rate of the warped wafer is improved, and the productivity of the semiconductor process is further improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. The bearing device for the semiconductor process equipment is characterized by comprising a first bearing platform and a second bearing platform surrounding the first bearing platform, wherein the first bearing platform is provided with a first bearing surface, the second bearing platform is provided with a second bearing surface, the first bearing surface and the second bearing surface jointly form the bearing surface, used for bearing a workpiece to be processed, of the bearing device, and the bearing device further comprises a position adjusting assembly, wherein the position adjusting assembly can drive at least one of the first bearing platform and the second bearing platform to move along the axial direction of the bearing device so as to adjust the axial relative position of the first bearing surface and the second bearing surface on the bearing device.
2. The apparatus of claim 1, wherein the position adjustment assembly comprises a driving mechanism and a fixing structure, the fixing structure is used for fixing one of the first and second stages in a process chamber of the semiconductor processing equipment, and the driving mechanism can drive the other of the first and second stages to move along a direction perpendicular to the carrying surface.
3. The carrier in claim 1, further comprising an inner cooling assembly disposed on a bottom surface of the first carrier table for cooling the first carrier table and an outer cooling assembly disposed on a bottom surface of the second carrier table for cooling the second carrier table.
4. The carrier device of claim 1, wherein the first stage has an inner ring electrode disposed therein and the second stage has an outer ring electrode disposed therein.
5. The carrying device as claimed in claim 4, wherein a projected area of the inner ring electrode on the first carrying surface of the first carrying stage is equal to a projected area of the outer ring electrode on the second carrying surface of the second carrying stage.
6. The carrying device as claimed in claim 4, wherein the first carrying stage and the second carrying stage are made of ceramic materials.
7. The carrying device as claimed in any one of claims 1 to 6, wherein the second carrying platform comprises a plurality of sub-carrying platforms arranged around the first carrying platform, each sub-carrying platform has a sub-carrying surface, and the sub-carrying surfaces of the sub-carrying platforms constitute the second carrying surface of the second carrying platform.
8. A semiconductor processing apparatus comprising a process chamber and a carrier disposed in the process chamber, wherein the carrier is according to any one of claims 1 to 7.
9. The semiconductor processing apparatus according to claim 8, further comprising a control device for controlling the position adjustment assembly to adjust the relative position between the first and second stages when one of the first and second carrying surfaces of the first and second stages does not contact the wafer carried on the carrying device, and controlling the position adjustment assembly to make the first carrying surface of the first stage flush with the second carrying surface of the second stage after both the first carrying surface of the first stage and the second carrying surface of the second stage contact the wafer.
10. The semiconductor processing apparatus of claim 9, wherein the position adjustment assembly comprises a drive mechanism and a securing structure, the securing structure configured to secure the second carrier table in the process chamber, the drive mechanism capable of driving the first carrier table in a direction perpendicular to the carrier surface;
the control device is used for controlling the driving mechanism to drive the first bearing platform to move when one of the first bearing surface of the first bearing platform and the second bearing surface of the second bearing platform is not contacted with the wafer borne on the bearing device, and controlling the driving mechanism to drive the first bearing platform to move to the first bearing surface of the first bearing platform and the second bearing surface of the second bearing platform to be flush with the second bearing surface of the second bearing platform after the first bearing surface of the first bearing platform and the second bearing surface of the second bearing platform are contacted with the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110176702.5A CN112563184A (en) | 2021-02-09 | 2021-02-09 | Bearing device and semiconductor process equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110176702.5A CN112563184A (en) | 2021-02-09 | 2021-02-09 | Bearing device and semiconductor process equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112563184A true CN112563184A (en) | 2021-03-26 |
Family
ID=75035911
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110176702.5A Pending CN112563184A (en) | 2021-02-09 | 2021-02-09 | Bearing device and semiconductor process equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112563184A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1209644A (en) * | 1997-08-27 | 1999-03-03 | 佳能株式会社 | Substrate treatment device, substrate supporting device, and method for treatingand mfg. of substrate therefor |
| US20060023394A1 (en) * | 2004-07-27 | 2006-02-02 | International Business Machines Corporation | Pressure assisted wafer holding apparatus and control method |
| CN103065997A (en) * | 2011-10-19 | 2013-04-24 | 中芯国际集成电路制造(上海)有限公司 | Wafer bearing device and method of wafer bearing |
| JP2013120902A (en) * | 2011-12-08 | 2013-06-17 | Tokyo Electron Ltd | Bonding method, program, computer storage medium, bonding device and bonding system |
| CN105612598A (en) * | 2013-09-25 | 2016-05-25 | 芝浦机械电子株式会社 | Suction stage, bonding device, and method for manufacturing bonded substrate |
-
2021
- 2021-02-09 CN CN202110176702.5A patent/CN112563184A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1209644A (en) * | 1997-08-27 | 1999-03-03 | 佳能株式会社 | Substrate treatment device, substrate supporting device, and method for treatingand mfg. of substrate therefor |
| US20060023394A1 (en) * | 2004-07-27 | 2006-02-02 | International Business Machines Corporation | Pressure assisted wafer holding apparatus and control method |
| CN103065997A (en) * | 2011-10-19 | 2013-04-24 | 中芯国际集成电路制造(上海)有限公司 | Wafer bearing device and method of wafer bearing |
| JP2013120902A (en) * | 2011-12-08 | 2013-06-17 | Tokyo Electron Ltd | Bonding method, program, computer storage medium, bonding device and bonding system |
| CN105612598A (en) * | 2013-09-25 | 2016-05-25 | 芝浦机械电子株式会社 | Suction stage, bonding device, and method for manufacturing bonded substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11393729B2 (en) | Systems and methods for controlling plasma instability in semiconductor fabrication | |
| US11133210B2 (en) | Dual temperature heater | |
| US6676761B2 (en) | Method and apparatus for dechucking a substrate | |
| US7922440B2 (en) | Apparatus and method for centering a substrate in a process chamber | |
| KR102569094B1 (en) | Carrier plate for use in plasma processing systems | |
| EP0323620A2 (en) | Etching method and etching apparatus | |
| US20040035532A1 (en) | Etching apparatus for use in manufacturing a semiconductor device and shield ring for upper electrode thereof | |
| US20220051928A1 (en) | Transfer device, transfer system, and end effector | |
| KR20150131227A (en) | Method and apparatus for processing a substrate using a selectively grounded and movable process kit ring | |
| CN112563184A (en) | Bearing device and semiconductor process equipment | |
| CN104733367B (en) | Lift pin assembly and substrate processing apparatus having the same | |
| US11189467B2 (en) | Apparatus and method of attaching pad on edge ring | |
| US20230071478A1 (en) | Substrate processing apparatus and maintenance method for substrate processing apparatus | |
| US20220293397A1 (en) | Substrate edge ring that extends process environment beyond substrate diameter | |
| US11881375B2 (en) | Common substrate and shadow ring lift apparatus | |
| KR20230055550A (en) | Plasma processing apparatus and semiconductor device menufacturing method using the same | |
| TW202224083A (en) | Lift pin interface in a substrate support | |
| CN117832055A (en) | Bottom electrode system and semiconductor processing equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210326 |
|
| RJ01 | Rejection of invention patent application after publication |