CN112556905A - Stress detection device and detection method based on optical interference - Google Patents
Stress detection device and detection method based on optical interference Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
- G01L1/247—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet using distributed sensing elements, e.g. microcapsules
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Abstract
A stress detection device and a detection method based on optical interference are provided, wherein the detection device comprises: the wafer bearing device is used for bearing a wafer to be tested, and the wafer to be tested comprises a plurality of sampling areas; an incident light system for emitting a plurality of incident lights; the phase-shift interference system is used for enabling the detection light and the reference light to mutually interfere to form detection interference light; the image acquisition system is used for acquiring a plurality of corresponding interference fringe pictures according to a plurality of detection interference lights corresponding to the same sampling region, and forming a plurality of reference light phases of the plurality of detection interference lights to be different; and the stress analysis system is used for acquiring stress data of the sampling region according to a plurality of interference fringe pictures corresponding to the same sampling region. Therefore, the stress detection device and the corresponding detection method have the advantages of high precision, high sensitivity, high detection efficiency, less detection depth limitation and no damage to the semiconductor structure in the detection process, and are used for detecting the stress distribution condition of the semiconductor structure.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a stress detection device and a stress detection method based on optical interference.
Background
In some processes for manufacturing semiconductor devices, stress variations are likely to occur within the structure of the semiconductor device due to differences in Coefficient of Thermal Expansion (CTE) between different materials, thereby causing adverse effects on the performance, reliability, and production yield of the semiconductor device. For example, structural deformation caused by stress variation in the structure of the semiconductor device may cause problems such as cracks in the semiconductor structure, film cracking, plug structure ejection, and silicon debonding. In a transistor using a stress material, after the stress of a source and a drain or a fin of the transistor changes, the mobility of carriers in a channel is affected, so that the performance of a semiconductor device is affected. Moreover, in the process of manufacturing a semiconductor device, if the front layer of the semiconductor structure deforms due to stress variation, the control difficulty of subsequent processes such as photolithography alignment and the like is increased.
In order to detect the stress distribution of the semiconductor structure, one way in the prior art is to use a Raman microscope (Raman microscope). However, the raman microscope has low detection flux, which results in a large amount of time required to acquire data of a sampling region, for example, several hours required to acquire data of a region size of about 10 μm × 10 μm, and thus the detection efficiency is low. Moreover, when a raman microscope is used, only a shallow layer on the surface of the semiconductor structure can be detected, and thus, stress distribution of structures deep into the semiconductor, such as a buried structure or a deep trench, cannot be detected, resulting in a large limitation of the detection depth.
In yet another prior art approach, the electron microscope used must perform destructive testing, which can result in permanent damage to the semiconductor structure.
Therefore, it is desirable to provide a stress detection apparatus and a corresponding detection method for detecting the stress distribution of a semiconductor structure, which have high precision, high sensitivity, high detection efficiency, and less detection depth limitation, and do not damage the semiconductor structure during the detection process.
Disclosure of Invention
The invention aims to provide a stress detection device and a detection method which have high precision, high sensitivity, high detection efficiency and less detection depth limitation and can not damage a semiconductor structure in the detection process so as to detect the stress distribution condition of the semiconductor structure.
In order to solve the above technical problem, an embodiment of the present invention provides a stress detection apparatus based on optical interference, including: the wafer bearing device is used for bearing a wafer to be tested, and the wafer to be tested comprises a plurality of sampling areas; an incident light system for emitting a plurality of incident lights; the phase-shifting interference system is used for splitting each incident light into a first incident light and a second incident light, and enabling a detection light and a reference light to be mutually interfered to form a detection interference light, wherein the reference light is formed by phase modulation of the first incident light, and the detection light is formed by reflection of the second incident light through any sampling area; the image acquisition system is used for acquiring a plurality of corresponding interference fringe pictures according to a plurality of detection interference lights corresponding to the same sampling region, and forming a plurality of reference light phases of the plurality of detection interference lights to be different; and the stress analysis system is used for acquiring stress data of the sampling region according to a plurality of interference fringe pictures corresponding to the same sampling region.
Optionally, the phase-shifting interference system includes: a beam splitting and combining unit for splitting each incident light into the first incident light and the second incident light, and for combining a reference light formed by the same incident light and a detection light to form the detection interference light; the focusing unit is used for focusing second incident light on any sampling area, and the second incident light is reflected by the sampling area to form detection light after being focused; and the reference light modulation unit is used for moving the reference surface along the optical path direction of the first incident light, so that the first incident light formed by different incident lights is respectively reflected by the reference surfaces at different positions to perform phase modulation on the first incident light, and a plurality of reference lights with different phases are formed.
Optionally, the light splitting and beam combining unit includes a semi-reflecting and semi-transmitting light splitting prism.
Optionally, the reference light modulation unit includes; the reflector is used for reflecting the first incident light, and the reflecting mirror surface of the reflector is the reference surface; and the reference surface moving module is used for controlling the reflector to move along the optical path direction of the first incident light.
Optionally, the reference surface moving module includes a piezoelectric ceramic displacer.
Optionally, the image acquisition system includes: the system comprises a relay unit and a fringe acquisition camera, wherein the relay unit is used for receiving a plurality of interference detection lights corresponding to the same sampling region, acquiring interference fringes corresponding to the interference detection lights and projecting the interference fringes to the fringe acquisition camera, and the fringe acquisition camera is used for shooting the interference fringes to form a plurality of interference fringe pictures.
Optionally, the stress analysis system includes: the first analysis unit is used for respectively acquiring a plurality of light intensity data according to a plurality of interference fringe pictures corresponding to the same sampling region; and the second operation unit is used for acquiring the refractive index change data of the sampling region according to a plurality of light intensity data corresponding to the same sampling region and acquiring the stress data of the sampling region according to the refractive index change data.
Optionally, the wafer carrier can move in a plane parallel to the surface of the wafer carrier and in a direction perpendicular to the surface of the wafer carrier, respectively; the stress detection device based on optical interference further comprises: the first control system is used for controlling the wafer bearing device to move in a plane parallel to the surface of the wafer bearing device; and the second control system is used for controlling the wafer bearing device to move in the direction vertical to the surface of the wafer bearing device.
Optionally, the stress analysis system further includes: and the second analysis unit is used for acquiring at least one of a first stress distribution diagram and a second stress distribution diagram according to the stress data of the plurality of sampling areas, wherein the first stress distribution diagram is acquired according to the plurality of sampling areas which are positioned at the same detection depth, and the second stress distribution diagram is acquired according to the plurality of sampling areas which are positioned at different detection depths and have overlapped projections on the surface of the wafer bearing device.
Optionally, the stress analysis system further includes: and the third analysis unit is used for fitting the plurality of first stress distribution graphs into a spatial stress distribution graph or fitting the plurality of second stress distribution graphs into the spatial stress distribution graph.
Optionally, the phase-shift interference system is further configured to form optical paths of the first incident light and the second incident light to be perpendicular to each other.
Optionally, the incident light system includes: a light source module for emitting a plurality of initial incident lights; the incident light modulation unit is used for modulating a plurality of initial incident lights to form corresponding incident lights, and the modulation parameters of the incident light modulation unit for the initial incident lights comprise polarization parameters of the initial incident lights.
Correspondingly, the technical scheme of the invention also provides a detection method adopting the stress detection device based on the optical interference, which comprises the following steps: providing a wafer to be tested, wherein the wafer to be tested comprises a plurality of sampling areas; emitting a plurality of incident lights; splitting each incident light to form a first incident light and a second incident light; mutually interfering detection light and reference light to form detection interference light, wherein the reference light is formed by phase modulation of the first incident light, and the detection light is formed by reflection of the second incident light through any sampling area; obtaining a plurality of corresponding interference fringe pictures according to a plurality of detection interference lights corresponding to the same sampling region, and forming a plurality of reference light phases of the plurality of detection interference lights to be different; and acquiring stress data of the sampling region according to a plurality of interference fringe pictures corresponding to the same sampling region.
Optionally, the method for forming the detection light further includes: and focusing second incident light on any sampling area, wherein the second incident light is reflected by the sampling area to form detection light after being focused.
Optionally, the method for phase-modulating the first incident light includes: and moving the reference surface along the optical path direction of the first incident light, so that the first incident light formed by different incident lights is respectively reflected by the reference surfaces at different positions, so as to perform phase modulation on the first incident light, and form a plurality of reference lights with different phases.
Optionally, the method for making the detection light and the reference light interfere with each other to form detection interference light includes: combining the reference light and the detection light formed by the same incident light to form the detection interference light.
Optionally, the method for obtaining a plurality of corresponding interference fringe pictures according to a plurality of detection interference lights corresponding to the same sampling region includes: receiving a plurality of interference detection lights corresponding to the same sampling region; acquiring interference fringes corresponding to each of the interference detection lights; and shooting a plurality of interference fringes to form a plurality of interference fringe pictures.
Optionally, the method for obtaining the stress data of the sampling region according to a plurality of interference fringe pictures corresponding to the same sampling region includes: respectively acquiring a plurality of light intensity data according to a plurality of interference fringe pictures corresponding to the same sampling region; acquiring refractive index change data of the sampling region according to a plurality of light intensity data corresponding to the same sampling region; and acquiring stress data of the sampling region according to the refractive index change data.
Optionally, the method further includes: controlling the wafer bearing device to move in a plane parallel to the surface of the wafer bearing device; and controlling the wafer bearing device to move in a direction vertical to the surface of the wafer bearing device.
Optionally, the method further includes: and acquiring at least one of a first stress distribution diagram and a second stress distribution diagram according to the stress data of the sampling areas, wherein the first stress distribution diagram is acquired according to the sampling areas which are positioned at the same detection depth, and the second stress distribution diagram is acquired according to the sampling areas which are positioned at different detection depths and have overlapped projections on the surface of the wafer bearing device.
Optionally, the method further includes: fitting the plurality of first stress profiles to a spatial stress profile or fitting the plurality of second stress profiles to a spatial stress profile.
Optionally, the optical paths of the first incident light and the second incident light are perpendicular to each other.
Optionally, the method of emitting incident light includes: emitting initial incident light; modulating the initial incident light to form the incident light, the modulation parameters for the initial incident light including polarization parameters of the initial incident light.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
in the stress detection device based on optical interference provided by the technical scheme of the invention, because the structure or the internal structure (such as the spacing between atoms) of the material in the sampling region can be slightly changed under the influence of stress, the optical signal focused on the sampling region can reflect the influence of the stress on the structure or the internal structure of the material in the sampling region after being reflected by the sampling region to change. For the above reasons, the detection light and the reference light are interfered with each other to form the detection interference light, and the corresponding multiple interference fringe pictures are obtained according to the multiple detection interference lights corresponding to the same sampling region, and the multiple reference lights forming the multiple detection interference lights have different phases, so that the stress data of the sampling region can be obtained by analyzing the interference fringes formed by the multiple detection interference lights, and the stress analysis of the sampling region is realized. Specifically, each incident light is split into a first incident light and a second incident light by a phase-shift interference system, a reference light is formed by phase-modulating the first incident light, and a detection light is formed by reflecting the second incident light by any sampling region, so that the detection light and the reference light formed by the same incident light can interfere with each other to form the detection interference light. On the basis, based on the principle of a multi-step phase shift method, the stress analysis system can acquire the refractive index change data of the sampling region according to a plurality of interference fringe pictures corresponding to the same sampling region, and analyze the stress data of the sampling region according to the refractive index change data. In addition, on the one hand, since the stress detection device based on optical interference performs detection by an optical method, the semiconductor structure is not damaged. On the other hand, since the time until the detection interference light is formed is short after the incident light is emitted, the time for actual detection can be greatly reduced, thereby improving the detection efficiency. On the basis, the incident light system can adjust and select the wavelength, the light intensity, the type and the like of incident light according to actual detection requirements, so that stress detection with high precision, high sensitivity and less detection depth limitation is realized. For example, by increasing the wavelength of the incident light, the incident light can be better focused at the inner depth of the wafer to be detected, and the detection of the deep structure of the wafer to be detected is realized, so that the detection depth is less limited. For example, the accuracy and sensitivity of detection can be improved by adjusting parameters such as power and light intensity of incident light according to the structure and signal interference in actual detection. In conclusion, the stress detection device based on optical interference can realize stress detection analysis on the wafer to be detected, wherein the stress detection analysis has the advantages of high precision, high sensitivity, high detection efficiency, less detection depth limitation and no damage to the semiconductor structure in the detection process.
Drawings
FIG. 1 is a schematic structural diagram of an optical interference-based stress detection apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of the structure of the incident light system of FIG. 1;
FIG. 3 is a schematic diagram of the structure of the reference light modulation unit of FIG. 1;
FIG. 4 is an enlarged partial schematic view of region K of FIG. 1;
FIG. 5 is a schematic diagram of the image acquisition system of FIG. 1;
FIG. 6 is a schematic diagram of the stress analysis system of FIG. 1;
fig. 7 is a flowchart illustrating a detection method according to an embodiment of the invention.
Detailed Description
As described in the background art, when the detection device of the prior art is used to detect the stress variation of the semiconductor structure, it is impossible to achieve both high accuracy, high sensitivity, high efficiency, less limitation of the detection depth, and nondestructive detection.
Therefore, it is desirable to provide a stress detection apparatus and a corresponding detection method for detecting the stress distribution of a semiconductor structure, which have high precision, high sensitivity, high detection efficiency, and less detection depth limitation, and do not damage the semiconductor structure during the detection process.
In order to solve the technical problem, the invention provides a stress detection device and a stress detection method based on optical interference, wherein the stress detection device based on optical interference comprises: the wafer bearing device is used for bearing a wafer to be tested, and the wafer to be tested comprises a plurality of sampling areas; an incident light system for emitting a plurality of incident lights; the phase-shifting interference system is used for splitting each incident light into a first incident light and a second incident light, and enabling a detection light and a reference light to be mutually interfered to form a detection interference light, wherein the reference light is formed by phase modulation of the first incident light, and the detection light is formed by reflection of the second incident light through any sampling area; the image acquisition system is used for acquiring a plurality of corresponding interference fringe pictures according to a plurality of detection interference lights corresponding to the same sampling region, and forming a plurality of reference light phases of the plurality of detection interference lights to be different; and the stress analysis system is used for acquiring stress data of the sampling region according to a plurality of interference fringe pictures corresponding to the same sampling region. Therefore, the stress detection device and the corresponding detection method based on the optical interference have the advantages of high precision, high sensitivity, high detection efficiency, less detection depth limitation and no damage to the semiconductor structure in the detection process, and are used for detecting the stress distribution condition of the semiconductor structure.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 1 is a schematic structural diagram of a stress detection apparatus based on optical interference according to an embodiment of the present invention, fig. 2 is a schematic structural diagram of an incident light system in fig. 1, fig. 3 is a schematic structural diagram of a reference light modulation unit in fig. 1, fig. 4 is a schematic partial enlarged view of a region K in fig. 1, fig. 5 is a schematic structural diagram of an image acquisition system in fig. 1, and fig. 6 is a schematic structural diagram of a stress analysis system in fig. 1.
Referring to fig. 1, the stress detection apparatus based on optical interference includes:
the wafer carrying device 100 is used for carrying a wafer 110 to be tested, wherein the wafer 110 to be tested comprises a plurality of sampling areas P;
an incident light system 120 for emitting a plurality of incident lights 121;
the phase-shift interference system 200 is configured to split each incident light 121 to form a first incident light 211 and a second incident light 212, and to enable a detection light 222 and a reference light 231 to interfere with each other to form a detection interference light 223, where the reference light 231 is formed by phase modulation of the first incident light 211, and the detection light 222 is formed by reflection of the second incident light 212 by any sampling region P;
the image acquisition system 130 is configured to obtain a plurality of interference fringe pictures according to a plurality of detection interference lights 223 corresponding to the same sampling region P, and phases of a plurality of reference lights 231 forming the plurality of detection interference lights 223 are different;
and the stress analysis system 140 is configured to obtain stress data of the sampling region P according to a plurality of interference fringe pictures corresponding to the same sampling region P.
It should be noted that, for ease of understanding, only 1 sampling region P is schematically illustrated in fig. 1.
In the stress detection device based on optical interference, the structure or the internal structure of the material (for example, the inter-atomic distance and the like) in the sampling region P is slightly changed under the influence of the stress, so that the optical signal focused on the sampling region P is changed by the reflection of the sampling region P, and the influence of the stress on the structure or the internal structure of the material in the sampling region P can be reflected.
For the above reasons, the detection light 222 and the reference light 231 are interfered with each other to form the detection interference light 223, and a plurality of corresponding interference fringe pictures are obtained according to a plurality of detection interference lights 223 corresponding to the same sampling region P, and the phases of the plurality of reference lights 231 forming the plurality of detection interference lights 223 are different, so that by analyzing the interference fringes formed by the plurality of detection interference lights 223, the stress data of the sampling region P can be obtained, and the stress analysis of the sampling region P is realized.
Specifically, since each incident light 121 is split into the first incident light 211 and the second incident light 212 by the phase-shift interference system 200, the reference light 231 is formed by phase-modulating the first incident light 211, and the detection light 222 is formed by reflecting the second incident light 212 by any sampling region P, the detection light 222 and the reference light 231 formed by the same incident light 121 can interfere with each other to form the detection interference light 223. On this basis, based on the principle of the multi-step phase shift method, the stress analysis system 140 can obtain refractive index change data of the same sampling region P according to a plurality of interference fringe pictures corresponding to the sampling region P, and analyze stress data of the sampling region P according to the refractive index change data.
In addition, on the one hand, since the stress detection device based on optical interference performs detection by an optical method, the wafer 110 to be measured is not damaged. On the other hand, since the time until the detection interference light 223 is formed is short after the incident light 121 is emitted, the time for actual detection can be greatly reduced, thereby improving the detection efficiency. On this basis, the incident light system 120 can adjust and select the wavelength, light intensity, type and the like of the incident light 121 according to the actual detection requirements, so as to realize stress detection with high precision, high sensitivity and less detection depth limitation. For example, by increasing the wavelength of the incident light 121, the incident light 121 can be better focused at the inner depth of the wafer 110 to be detected, so as to detect the deep structure of the wafer 110 to be detected, and thus, the detection depth is less limited. For example, the accuracy and sensitivity of detection can be improved by adjusting parameters such as power and light intensity of the incident light 121 according to the structure and signal interference during actual detection.
In conclusion, the stress detection device based on optical interference can realize stress detection and analysis of the semiconductor structure, which has the advantages of high precision, high sensitivity, high detection efficiency, less detection depth limitation and no damage to the semiconductor structure in the detection process.
The following detailed description will be made in conjunction with the accompanying drawings.
Referring to fig. 1 and fig. 2, the incident light system 120 includes: a light source 125 for emitting an initial incident light 1201; an incident light modulation unit 126 for modulating the initial incident light 1201 to form the incident light 121.
In this embodiment, the initial incident light 1201 emitted by the light source 125 is laser light.
In this embodiment, the wavelength of the initial incident light 1201 is monochromatic. Accordingly, the wavelength range of the initial incident light 1201 is the waveband of the monochromatic light.
Specifically, in the present embodiment, the wavelength band of the initial incident light 1201 is selected according to the material in the sampling region P, so that the incident light 121 has a corresponding wavelength band. For example, when the material of the sampling region P is silicon, the wavelength band of the initial incident light 1201 can be selected from NIR-SWIR wavelength bands; when the material of the sampling region P is SiC, the wavelength band of the initial incident light 1201 may be selected from a visible light wavelength band to a SWIR wavelength band.
In this embodiment, the modulation parameters of the incident light modulation unit 126 for the initial incident light 1201 include polarization parameters of the initial incident light 1201.
By selecting the wave band of the initial incident light 1201, the penetrable depth of the second incident light 212 in the direction Z within the wafer 110 to be tested can be controlled, so as to be adapted to the sampling regions P with various depths within the wafer 110 to be tested, so as to detect the sampling regions P with various depths within the wafer 110 to be tested. For example, when a sampling region P with a deeper depth along the wafer 110 to be tested needs to be detected in the direction Z, the second incident light 212 can reach a deeper penetrable depth in the wafer 110 to be tested in the direction Z by selecting a larger wavelength of the initial incident light 1201, so that the second incident light 212 can be better focused at the inner depth of the wafer 110 to be tested, thereby realizing the detection of the deep structure of the wafer 110 to be tested.
In one other embodiment, the modulation parameter of the incident light modulation unit for the initial incident light further includes at least one of power and light intensity of the initial incident light. Therefore, according to actual detection requirements in the wafer to be detected, such as a specific structure to be detected and a specific structure around the structure to be detected, the depth of a sampling area, the signal interference condition and the like, the pertinence of incident light can be improved through flexible modulation of initial incident light, and high-precision and high-sensitivity stress detection and corresponding analysis are realized.
Referring to fig. 1 and 3, the phase-shifting interferometry system 200 includes: a beam splitting and combining unit 210 for splitting each incident light 121 into the first incident light 211 and the second incident light 212, and for combining the reference light 231 and the detection light 222 formed by the same incident light 121 to form the detection interference light 223; a focusing unit 220, configured to focus a second incident light 212 on any sampling region P, where the light of the second incident light 212 is reflected by the sampling region P to form a detection light 222 after being focused; the reference light modulation unit 230 is provided with a reference surface 2301, and is used for moving the reference surface 2301 along the optical path direction of the first incident light 211, so that the first incident light 211 formed by different incident lights 121 is reflected by the reference surfaces 2301 at different positions respectively, and phase modulation is performed on the first incident light 211 to form a plurality of reference lights 231 with different phases.
For convenience of understanding, fig. 1 only schematically illustrates a case where the incident light system 120 emits 1 incident light 121, that is, a case where the incident light system 120 emits the primary incident light 121. Accordingly, the incident light system 120 emitting a plurality of incident lights 121 means that the incident light system 120 emits a plurality of incident lights 121 for the same sampling region P.
In this embodiment, the beam splitting and combining unit 210 includes a transflective beam splitting prism.
In the present embodiment, the reference light modulation unit 230 includes; a mirror 235 for reflecting the first incident light 211, wherein a mirror surface of the mirror 235 is the reference surface 2301; a reference plane moving module 236, configured to control the mirror 235 to move along the optical path direction of the first incident light 211.
In this embodiment, the reference plane moving module 236 includes: a piezoelectric ceramic displacer. Accordingly, the reference plane 2301 can be precisely controlled to move with a slight displacement, so that the phase difference between the reference lights 231 corresponding to the same sampling region P can be precisely adjusted according to actual detection needs.
In the present embodiment, the phase-shifting interference system 200 is further configured to form the optical paths of the first incident light 211 and the second incident light 212 to be perpendicular to each other.
Specifically, each incident light 121 is split into a first incident light 211 and a second incident light 212 by the beam splitting and combining unit 210, and optical paths of the first incident light 211 and the second incident light 212 are perpendicular to each other. Then, the first incident light 211 is reflected by the reference surface 2301 of the reference light modulation unit 230 to form the reference light 231. Then, for the same sampling region P, the reference surface 2301 is moved on the optical path of the first incident light 211, so that the first incident light 211 formed by the plurality of incident lights 121 is reflected by the reference surface 2301 at different positions, respectively, to perform phase modulation on the first incident light 211, thereby forming a plurality of reference lights 231 having different phases. Meanwhile, the second incident light 212 is incident on the sampling region P toward the surface of the wafer 110 to be tested, and forms the detection light 222 through reflection of the sampling region P. On this basis, the reference light 231 and the detection light 222 formed by the same incident light 121 are combined by the beam splitting and combining unit 210 to form the detection interference light 223.
Since the reference light 231 is formed by the first incident light 211 after phase modulation, and the detection light 222 is formed by the second incident light 212 after being reflected by any sampling region P, the detection light 222 formed by the same incident light 121 and the reference light 231 can interfere with each other to form the detection interference light 223.
Referring to fig. 1 and fig. 4, fig. 4 is a partially enlarged schematic view of a region K in fig. 1, and a sampling region P is illustrated by taking one of a plurality of sampling regions P as an example.
Specifically, the second incident light 212 is focused in the wafer 110 to be measured by the focusing unit 220, and is reflected in the region of the depth of field s near the focal plane to form the detection light 222.
It should be noted that, according to the position to be detected on the surface of the wafer 110 to be detected or in the wafer 110 to be detected, preset coordinates are provided in the directions X, Y and Z, or preset coordinate ranges are provided in the directions X, Y and Z, so that the position to be detected in the wafer 110 to be detected can be detected by aligning the preset coordinates or aligning and focusing the preset coordinate ranges.
The sampling region P is a region corresponding to a focusing region of the second incident light 212 (a region formed by the depth of field s and the spot size of the second incident light 212 in the focal plane after focusing according to the preset coordinate or the preset coordinate range) on the surface of the wafer 110 to be measured or in the wafer 110 to be measured.
The spot size at the focal plane can be varied according to the actual detection requirements by forming the second incident light 212 with different parameters. Meanwhile, since the detection light 222 is formed by reflecting the second incident light 212 after being focused in the sampling region P, the light signal in the other region (non-focused region) than the sampling region P has little interference with the detection result.
The sampling region P is used for performing stress analysis on the interior of the wafer 110 to be tested, the surface of the wafer 110 to be tested, or the inner wall surface of the groove structure in the wafer 110 to be tested.
In the present embodiment, the wafer carrier 100 is capable of moving in a plane parallel to the surface of the wafer carrier 100 (parallel to the plane formed by the directions X and Y) and in a direction (direction Z) perpendicular to the surface of the wafer carrier 100, respectively. Accordingly, the position of the carrier can be adjusted to detect each sampling region P.
In this embodiment, the stress detection apparatus based on optical interference further includes: a first control system 151 for controlling the movement of the wafer carrier 100 in a plane parallel to the surface of the wafer carrier 100. Therefore, the wafer 110 to be tested can move in the horizontal plane, thereby achieving the alignment of the preset coordinates or the preset coordinate range in the directions X and Y.
Specifically, the first control system 151 includes: a first position sensor (not shown) for detecting the current position of the wafer 110 to be measured in the directions X and Y; a first control unit (not shown) for controlling the wafer carrier 100 to move in a plane parallel to the surface of the wafer carrier 100 according to the current coordinates of the wafer 110 to be tested corresponding to the current position in the directions X and Y and the preset coordinates or the preset coordinate range corresponding to the sampling region P in the directions X and Y.
In this embodiment, the stress detection apparatus based on optical interference further includes: a second control system 152 for controlling the movement of the wafer carrier 100 in a direction perpendicular to the surface of the wafer carrier 100. Therefore, the wafer 110 to be tested can move in the direction Z, thereby achieving alignment of the preset coordinates or the preset coordinate range in the direction Z.
Specifically, the second control system 152 includes: a second position sensor (not shown) for detecting a current position of the wafer 110 to be measured in the direction Z; a second control unit (not shown) for controlling the wafer carrier 100 to move in a direction perpendicular to the surface of the wafer carrier 100 according to the current coordinate of the wafer 110 to be tested corresponding to the current position in the direction Z and the preset coordinate or the preset coordinate range corresponding to the sampling region P in the direction Z.
Referring to fig. 1 and 5, the image capturing system 130 includes: a relay unit 131 and a streak acquisition camera 132.
The relay unit 131 is configured to receive a plurality of interference detection lights 222 corresponding to the same sampling region P, acquire an interference fringe corresponding to each interference detection light 222, and project the plurality of interference fringes to the fringe-collecting camera 132. The fringe collecting camera is used for shooting a plurality of interference fringes respectively to form a plurality of interference fringe pictures.
Referring to fig. 1 and 6, the stress analysis system 140 includes: the first analysis unit 141 is configured to obtain a plurality of light intensity data according to a plurality of interference fringe pictures corresponding to the same sampling region P; and a second operation unit 142, configured to obtain refractive index change data of the sampling region according to a plurality of light intensity data corresponding to the same sampling region P, and obtain stress data of the sampling region P according to the refractive index change data.
Specifically, since the structure or the internal structure of the material (for example, the inter-atomic distance or the like) in the sampling region P is slightly changed by the stress, and the refractive index of the sampling region P is changed by the slight change, the stress data of the sampling region P can be acquired by acquiring the refractive index change data, which is the amount of change in the refractive index of the sampling region P. At the same time, the relative phase difference between the detection light 222 and the reference light 231 reflected by the reference surface 2301 at the initial position with respect to the sampling region P is correlated with the refractive index change data, so that the stress data of the sampling region P can be analyzed based on the relative phase difference of the sampling region P, thereby realizing the stress analysis of the sampling region P in the wafer 110 to be measured.
The initial position is a position where the reference surface 2301 is located when the reference surface 2301 is not moved by the reference surface moving module 236.
Specifically, for a certain sampling region P, the light intensity a of the corresponding detection interference light 223 can be obtained according to 1 interference fringe picture, and
wherein A is1Is the intensity of the reference light 231 forming the detection interference light 223, A2Is the intensity of the detection light 222 forming the detection interference light 223, and Φ is the total phase difference of the reference light 231 and the detection light 222. In the case of incident light 121 of the same parameters, A1And A2And is not changed.
Based on the principle of the multi-step phase shift method, for example, a 3-step phase shift method or a 4-step phase shift method may be adopted, and the second arithmetic unit 142 may calculate the relative phase difference of the sampling region P by moving the reference surface 2301 to obtain a plurality of light intensities a corresponding to the plurality of detection interference lights 223 formed with different reference lights 231.
On this basis, for the sampling region P,
and the number of the first and second electrodes,
wherein the content of the first and second substances,
is the relative phase difference, Δ n is the refractive index change data, s is the depth of field, λ is the wavelength of the detected interference light 223 corresponding to the reference plane 2301 at the initial position, pjiklIs the photoelastic coefficient, uklIs the stress tensor.
In the present embodiment, based on the plurality of light intensities A, [ delta ] n, uklIn relation to each other, the second arithmetic unit 142 can obtain refractive index change data Δ n of the sampling region P by performing arithmetic operation based on a plurality of light intensity data (i.e., a plurality of light intensities a) corresponding to the same sampling region P, and can obtain stress data of the sampling region P by performing arithmetic operation based on the refractive index change data Δ n of the sampling region P. Thus, stress analysis of the sampling region P in the wafer 110 to be tested is realized.
In this embodiment, the stress analysis system 140 further includes: the second analysis unit 143 is configured to obtain at least one of a first stress distribution map and a second stress distribution map according to stress data of the plurality of sampling regions P, where the first stress distribution map is obtained according to the plurality of sampling regions P located at the same detection depth, and the second stress distribution map is obtained according to the plurality of sampling regions P located at different detection depths and having overlapped projections on the surface of the wafer carrier.
It should be noted that the detection depth corresponds to a preset coordinate or a coordinate range in the direction Z. The position of the projection of the sampling region P on the surface of the wafer bearing device corresponds to a preset coordinate or a coordinate range in the direction X and the direction Y.
In this embodiment, the stress analysis system further includes: a third analyzing unit 144, configured to fit the plurality of first stress profiles to the spatial stress profile, or fit the plurality of second stress profiles to the spatial stress profile.
In one other embodiment, the stress analysis system does not include a third analysis unit.
Fig. 7 is a flowchart illustrating a detection method according to an embodiment of the invention.
Accordingly, an embodiment of the present invention further provides a detection method using the stress detection apparatus based on optical interference in the embodiment shown in fig. 1 to 6, please refer to fig. 7 in combination with fig. 1 to 6, including:
step S100, providing a wafer to be tested, wherein the wafer to be tested comprises a plurality of sampling areas;
step S110, emitting a plurality of incident lights;
step S120, splitting each incident light into a first incident light and a second incident light;
step S130, enabling detection light and reference light to interfere with each other to form detection interference light, wherein the reference light is formed after the first incident light is subjected to phase modulation, and the detection light is formed after the second incident light is reflected by any sampling area;
step S140, obtaining a plurality of corresponding interference fringe pictures according to a plurality of detection interference lights corresponding to the same sampling region, and forming a plurality of reference light phases of the plurality of detection interference lights to be different;
and step S150, acquiring stress data of the sampling area according to a plurality of interference fringe pictures corresponding to the same sampling area.
The following detailed description is made with reference to the accompanying drawings.
Referring to fig. 1, a wafer 110 to be tested is provided, wherein the wafer 110 to be tested includes a plurality of sampling regions P.
It should be noted that the sampling region P is the same as the sampling region P described in the embodiment shown in fig. 1 to 6, and the description of the sampling region P is omitted here.
Referring to fig. 1 and fig. 2, a plurality of incident lights 121 are emitted.
In the present embodiment, the method of emitting incident light 121 includes: emitting initial incident light 1201; modulating the initial incident light 1201 forms the incident light 121.
In this embodiment, the initial incident light 1201 is laser light.
In this embodiment, the wavelength of the initial incident light 1201 is monochromatic. Accordingly, the wavelength range of the initial incident light 1201 is the waveband of the monochromatic light.
Specifically, in the present embodiment, the wavelength band of the initial incident light 1201 is selected according to the material in the sampling region P, so that the incident light 121 has a corresponding wavelength band. For example, when the material of the sampling region P is silicon, the wavelength band of the initial incident light 1201 can be selected from NIR-SWIR wavelength bands; when the material of the sampling region P is SiC, the wavelength band of the initial incident light 1201 may be selected from a visible light wavelength band to a SWIR wavelength band.
In the present embodiment, the modulation parameters for the initial incident light 1201 include polarization parameters of the initial incident light 1201.
In one other embodiment, the modulation parameter for the initial incident light comprises at least one of a power and an intensity of the initial incident light.
The sampling region P is used for performing stress analysis on the interior of the wafer 110 to be tested, the surface of the wafer 110 to be tested, or the inner wall surface of the groove structure in the wafer 110 to be tested. When the sampling region P is located in the wafer to be tested, that is, the sampling region P is used for performing stress analysis on the interior of the wafer to be tested 110, the material in the sampling region P includes a material with transparency, such as a material that is fully transparent, semi-transparent, or the like, or the material in the sampling region P may further include a material that is partially absorbing to the second incident light 212.
With continuing reference to fig. 1, each incident light 121 is split into a first incident light 211 and a second incident light 212.
In this embodiment, the optical paths of the first incident light 211 and the second incident light 212 are perpendicular to each other.
Referring to fig. 1 and fig. 3, the detection light 222 and the reference light 231 interfere with each other to form a detection interference light 223, the reference light 231 is formed by the first incident light 211 after phase modulation, and the detection light 222 is formed by the second incident light 212 after being reflected by any sampling region P.
In this embodiment, the method for phase-modulating the first incident light 211 includes: the reference surface 2301 is moved along the optical path direction of the first incident light 211, so that the first incident light 211 formed by different incident lights 121 is reflected by the reference surfaces 2301 at different positions, respectively, to perform phase modulation on the first incident light 211, and form a plurality of reference lights 231 with different phases.
In the present embodiment, the method for forming the detection light 222 includes: the second incident light 212 is focused on any sampling region P, and the second incident light 212 is reflected by the sampling region P to form the detection light 222 after being focused.
In the present embodiment, the method of making the detection light 222 and the reference light 231 interfere with each other to form the detection interference light 223 includes: the reference light 231 and the detection light 222 formed by the same incident light 121 are combined to form the detection interference light 223.
Specifically, each incident light 121 is split into a first incident light 211 and a second incident light 212, and the optical paths of the first incident light 211 and the second incident light 212 are perpendicular to each other.
Next, the first incident light 211 is reflected at the reference surface 2301 to form the reference light 231. For the same sampling region P, the reference plane 2301 is moved on the optical path of the first incident light 211, so that the first incident light 211 formed by the plurality of the same incident lights 121 is reflected by the reference planes 2301 at different positions, respectively, to perform phase modulation on the first incident light 211, thereby forming a plurality of reference lights 231 with different phases.
Meanwhile, the second incident light 212 is incident on the sampling region P toward the surface of the wafer 110 to be tested, and forms the detection light 222 through reflection of the sampling region P.
On the basis, the reference light 231 and the detection light 222 formed by the same incident light 121 are combined to form the detection interference light 223.
Since the reference light 231 is formed by the first incident light 211 after phase modulation, and the detection light 222 is formed by the second incident light 212 after being reflected by any sampling region P, the detection light 222 formed by the same incident light 121 and the reference light 231 can interfere with each other to form the detection interference light 223.
In this embodiment, the detection method further includes: the wafer carrier 100 is controlled to move in a plane parallel to the surface of the wafer carrier 100 (parallel to the plane formed by the directions X and Y). Therefore, the wafer 110 to be tested can move in the horizontal plane, thereby achieving the alignment of the preset coordinates or the preset coordinate range in the directions X and Y.
Specifically, the method for controlling the movement of the wafer carrier 100 in a plane parallel to the surface of the wafer carrier 100 comprises: detecting the current position of the wafer 110 to be detected in the direction X and the direction Y; and controlling the wafer carrying device 100 to move in a plane parallel to the surface of the wafer carrying device 100 according to the current coordinates of the wafer 110 to be tested corresponding to the current position in the direction X and the direction Y and the preset coordinates or the preset coordinate range corresponding to the sampling area P in the direction X and the direction Y.
In this embodiment, the detection method further includes: the wafer carrier 100 is controlled to move in a direction (direction Z) perpendicular to the surface of the wafer carrier 100. Therefore, the wafer 110 to be tested can move in the direction Z, thereby achieving alignment of the preset coordinates or the preset coordinate range in the direction Z.
Specifically, the method for controlling the wafer carrier 100 to move in the direction perpendicular to the surface of the wafer carrier 100 includes: detecting the current position of the wafer 110 to be detected in the direction Z; according to the current coordinate of the wafer 110 to be tested corresponding to the current position in the direction Z and the preset coordinate or the preset coordinate range corresponding to the sampling region P in the direction Z, the wafer carrying device 100 is controlled to move in the direction perpendicular to the surface of the wafer carrying device 100.
With continuing reference to fig. 1 and fig. 5, a plurality of interference fringe pictures are obtained according to a plurality of detection interference lights 223 corresponding to the same sampling region P, and a plurality of reference lights 231 forming the plurality of detection interference lights 223 have different phases.
In the present embodiment, the method for acquiring a plurality of interference fringe pictures according to a plurality of detection interference lights 223 corresponding to the same sampling region P includes: receiving a plurality of interference detection light 223 corresponding to the same sampling region P; acquiring interference fringes corresponding to each of the interference detection light 223; and shooting a plurality of interference fringes to form a plurality of interference fringe pictures.
Referring to fig. 1 and fig. 6, stress data of the sampling region P is obtained according to a plurality of interference fringe pictures corresponding to the same sampling region P.
In this embodiment, the method for acquiring stress data of the sampling region P according to a plurality of interference fringe pictures corresponding to the same sampling region P includes: respectively acquiring a plurality of light intensity data according to a plurality of interference fringe pictures corresponding to the same sampling region P; acquiring refractive index change data of the sampling region P according to a plurality of light intensity data corresponding to the same sampling region P; and acquiring stress data of the sampling region P according to the refractive index change data.
The method for specifically acquiring the stress data of the sampling region P is the same as that shown in the embodiments shown in fig. 1 to 6, and is not described herein again.
In this embodiment, the detection method further includes: and acquiring at least one of a first stress distribution diagram and a second stress distribution diagram according to the stress data of the sampling regions P, wherein the first stress distribution diagram is acquired according to the sampling regions P which are positioned at the same detection depth, and the second stress distribution diagram is acquired according to the sampling regions P which are positioned at different detection depths and have overlapped projections on the surface of the wafer bearing device.
It should be noted that the detection depth corresponds to a preset coordinate or a coordinate range in the direction Z. The position of the projection of the sampling region P on the surface of the wafer bearing device corresponds to a preset coordinate or a coordinate range in the direction X and the direction Y.
In this embodiment, the detection method further includes: fitting the plurality of first stress profiles to a spatial stress profile or fitting the plurality of second stress profiles to a spatial stress profile.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (23)
1. An optical interference based stress detection device, comprising:
the wafer bearing device is used for bearing a wafer to be tested, and the wafer to be tested comprises a plurality of sampling areas;
an incident light system for emitting a plurality of incident lights;
the phase-shifting interference system is used for splitting each incident light into a first incident light and a second incident light, and enabling a detection light and a reference light to be mutually interfered to form a detection interference light, wherein the reference light is formed by phase modulation of the first incident light, and the detection light is formed by reflection of the second incident light through any sampling area;
the image acquisition system is used for acquiring a plurality of corresponding interference fringe pictures according to a plurality of detection interference lights corresponding to the same sampling region, and forming a plurality of reference light phases of the plurality of detection interference lights to be different;
and the stress analysis system is used for acquiring stress data of the sampling region according to a plurality of interference fringe pictures corresponding to the same sampling region.
2. The optical interference-based stress detection apparatus of claim 1, wherein the phase-shifting interferometry system comprises: a beam splitting and combining unit for splitting each incident light into the first incident light and the second incident light, and for combining a reference light formed by the same incident light and a detection light to form the detection interference light; the focusing unit is used for focusing second incident light on any sampling area, and the second incident light is reflected by the sampling area to form detection light after being focused; and the reference light modulation unit is used for moving the reference surface along the optical path direction of the first incident light, so that the first incident light formed by different incident lights is respectively reflected by the reference surfaces at different positions to perform phase modulation on the first incident light, and a plurality of reference lights with different phases are formed.
3. The stress detecting device based on optical interference as claimed in claim 2, wherein the beam splitting and combining unit comprises a semi-reflecting and semi-transmitting beam splitting prism.
4. The optical interference-based stress detection apparatus according to claim 2, wherein the reference light modulation unit comprises; the reflector is used for reflecting the first incident light, and the reflecting mirror surface of the reflector is the reference surface; and the reference surface moving module is used for controlling the reflector to move along the optical path direction of the first incident light.
5. The optical interference-based stress detection apparatus of claim 4 wherein the reference plane movement module comprises a piezoceramic displacer.
6. The optical interference-based stress detection apparatus of claim 1, wherein the image acquisition system comprises: the system comprises a relay unit and a fringe acquisition camera, wherein the relay unit is used for receiving a plurality of interference detection lights corresponding to the same sampling region, acquiring interference fringes corresponding to the interference detection lights and projecting the interference fringes to the fringe acquisition camera, and the fringe acquisition camera is used for shooting the interference fringes to form a plurality of interference fringe pictures.
7. The optical interference-based stress detection apparatus of claim 1, wherein the stress analysis system comprises: the first analysis unit is used for respectively acquiring a plurality of light intensity data according to a plurality of interference fringe pictures corresponding to the same sampling region; and the second operation unit is used for acquiring the refractive index change data of the sampling region according to a plurality of light intensity data corresponding to the same sampling region and acquiring the stress data of the sampling region according to the refractive index change data.
8. The optical interference-based stress detection apparatus of claim 7, wherein the wafer carrier is movable in a plane parallel to the surface of the wafer carrier and in a direction perpendicular to the surface of the wafer carrier, respectively; the stress detection device based on optical interference further comprises: the first control system is used for controlling the wafer bearing device to move in a plane parallel to the surface of the wafer bearing device; and the second control system is used for controlling the wafer bearing device to move in the direction vertical to the surface of the wafer bearing device.
9. The optical interference-based stress detection apparatus of claim 8, wherein the stress analysis system further comprises: and the second analysis unit is used for acquiring at least one of a first stress distribution diagram and a second stress distribution diagram according to the stress data of the plurality of sampling areas, wherein the first stress distribution diagram is acquired according to the plurality of sampling areas which are positioned at the same detection depth, and the second stress distribution diagram is acquired according to the plurality of sampling areas which are positioned at different detection depths and have overlapped projections on the surface of the wafer bearing device.
10. The optical interference-based stress detection apparatus of claim 9, wherein the stress analysis system further comprises: and the third analysis unit is used for fitting the plurality of first stress distribution graphs into a spatial stress distribution graph or fitting the plurality of second stress distribution graphs into the spatial stress distribution graph.
11. The optical interference-based stress detection apparatus of claim 1, wherein the phase-shifting interference system is further configured to form the optical paths of the first incident light and the second incident light to be perpendicular to each other.
12. The optical interference-based stress detection apparatus of claim 1, wherein the incident light system comprises: a light source module for emitting a plurality of initial incident lights; the incident light modulation unit is used for modulating a plurality of initial incident lights to form corresponding incident lights, and the modulation parameters of the incident light modulation unit for the initial incident lights comprise polarization parameters of the initial incident lights.
13. A detection method using the optical interference-based stress detection apparatus according to any one of claims 1 to 12, comprising:
providing a wafer to be tested, wherein the wafer to be tested comprises a plurality of sampling areas;
emitting a plurality of incident lights;
splitting each incident light to form a first incident light and a second incident light;
mutually interfering detection light and reference light to form detection interference light, wherein the reference light is formed by phase modulation of the first incident light, and the detection light is formed by reflection of the second incident light through any sampling area;
obtaining a plurality of corresponding interference fringe pictures according to a plurality of detection interference lights corresponding to the same sampling region, and forming a plurality of reference light phases of the plurality of detection interference lights to be different;
and acquiring stress data of the sampling region according to a plurality of interference fringe pictures corresponding to the same sampling region.
14. The inspection method of claim 13, wherein the method of forming inspection light further comprises: and focusing second incident light on any sampling area, wherein the second incident light is reflected by the sampling area to form detection light after being focused.
15. The detection method of claim 13, wherein the method of phase modulating the first incident light comprises: and moving the reference surface along the optical path direction of the first incident light, so that the first incident light formed by different incident lights is respectively reflected by the reference surfaces at different positions, so as to perform phase modulation on the first incident light, and form a plurality of reference lights with different phases.
16. The detection method according to claim 13, wherein the method of causing the detection light and the reference light to interfere with each other to form detection interference light includes: combining the reference light and the detection light formed by the same incident light to form the detection interference light.
17. The detection method according to claim 13, wherein the method of obtaining a plurality of interference fringe pictures corresponding to the plurality of detection interference lights corresponding to the same sampling region comprises: receiving a plurality of interference detection lights corresponding to the same sampling region; acquiring interference fringes corresponding to each of the interference detection lights; and shooting a plurality of interference fringes to form a plurality of interference fringe pictures.
18. The detection method according to claim 13, wherein the method for obtaining the stress data of the sampling region according to a plurality of interference fringe pictures corresponding to the same sampling region comprises: respectively acquiring a plurality of light intensity data according to a plurality of interference fringe pictures corresponding to the same sampling region; acquiring refractive index change data of the sampling region according to a plurality of light intensity data corresponding to the same sampling region; and acquiring stress data of the sampling region according to the refractive index change data.
19. The detection method of claim 18, further comprising: controlling the wafer bearing device to move in a plane parallel to the surface of the wafer bearing device; and controlling the wafer bearing device to move in a direction vertical to the surface of the wafer bearing device.
20. The detection method of claim 19, further comprising: and acquiring at least one of a first stress distribution diagram and a second stress distribution diagram according to the stress data of the sampling areas, wherein the first stress distribution diagram is acquired according to the sampling areas which are positioned at the same detection depth, and the second stress distribution diagram is acquired according to the sampling areas which are positioned at different detection depths and have overlapped projections on the surface of the wafer bearing device.
21. The detection method of claim 20, further comprising: fitting the plurality of first stress profiles to a spatial stress profile or fitting the plurality of second stress profiles to a spatial stress profile.
22. The detection method according to claim 13, wherein optical paths of the first incident light and the second incident light are perpendicular to each other.
23. The detection method of claim 13, wherein the method of emitting incident light comprises: emitting initial incident light; modulating the initial incident light to form the incident light, the modulation parameters for the initial incident light including polarization parameters of the initial incident light.
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