CN112539846A - Uncooled infrared detector and pixel level packaging structure thereof - Google Patents
Uncooled infrared detector and pixel level packaging structure thereof Download PDFInfo
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- CN112539846A CN112539846A CN202011399237.3A CN202011399237A CN112539846A CN 112539846 A CN112539846 A CN 112539846A CN 202011399237 A CN202011399237 A CN 202011399237A CN 112539846 A CN112539846 A CN 112539846A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- 238000007789 sealing Methods 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000012536 packaging technology Methods 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
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- Spectroscopy & Molecular Physics (AREA)
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Abstract
The invention relates to a pixel level packaging structure, which comprises a micro-cavity arranged on an infrared CMOS reading circuit, wherein the micro-cavity comprises a first layer of vacuum space for arranging a packaging component and a second layer of vacuum space arranged on the first layer of vacuum space; the first layer of vacuum space and the second layer of vacuum space are provided with a first exhaust hole on the cavity wall, the second layer of vacuum space is far away from the first layer of vacuum space and is provided with two second exhaust holes, and the first exhaust hole is communicated with the two second exhaust holes. The uncooled infrared detector further comprises the pixel level packaging structure, and the micro-cavity is arranged on the infrared CMOS reading circuit. According to the invention, the first exhaust hole and the two second exhaust holes are arranged, and the three exhaust holes are combined to form a Y-shaped structure, so that the hole sealing difficulty can be greatly reduced, the hole filling uniformity in the whole 8-inch range is improved, and the integral uniformity of the performance of the detector is greatly improved.
Description
Technical Field
The invention relates to the technical field of pixel level packaging, in particular to an uncooled infrared detector and a pixel level packaging structure thereof.
Background
At present, the non-refrigeration infrared mostly adopts a packaging technology which can be divided into a chip level, a wafer level, a pixel level and the like, wherein the chip level packaging technology can be divided into a metal tube package and a ceramic tube package according to the difference of packaging shells.
The metal package encapsulation is the encapsulation technology which is adopted at the earliest time, and the technology is very mature. Because the metal tube shell, the TEC, the getter and other parts with higher cost are adopted, the cost of the metal tube shell package is always high, and the application of the metal tube shell package to low-cost devices is limited.
The ceramic tube package can obviously reduce the volume and the weight of the detector after being packaged, and the raw material cost and the manufacturing cost are greatly reduced compared with the traditional metal tube package, so that the ceramic tube package is suitable for the production of large-batch electronic components. The development of the ceramic tube shell packaging technology benefits from the development of the technology without the TEC at present, the elimination of the TEC can reduce the requirement on the volume of the packaging tube shell and reduce the cost, but the ceramic tube shell packaging technology does not reach the electronic consumption level. Compared with the ceramic tube package technology, the wafer level package technology has higher integration level and simplified process steps, is more suitable for mass production and low-cost production, but still has large volume, and the thickness and the cost of the detector can not meet the requirements of electronic consumption level. The pixel level packaging technology independently packages a single pixel by using the traditional MEMS technology, which subverts the current packaging technology form, simplifies the manufacturing process of the non-refrigeration infrared focal plane detector rear end packaging and reduces the packaging cost to the utmost extent. However, with the maturity and the practicability of the pixel level packaging technology, the cost of the uncooled infrared focal plane detector is greatly reduced, the size and the thickness of the detector can be extremely consistent, and the uncooled infrared focal plane detector is closer to the visible light level, so that the uncooled infrared focal plane detector can meet the requirements of the consumer level application market.
The uncooled infrared detector needs to be packaged in a high-vacuum environment to achieve the purpose of infrared detection. However, the sealing of the exhaust holes is difficult in the conventional pixel level packaging technology, because the difficulty of pixel level packaging is how to seal the exhaust holes in a high vacuum environment and how to ensure the uniformity and consistency of the sealing holes, because the consistency of the response rate of the detector can be ensured only by ensuring the uniformity of the sealing holes, and the overall performance of the detector is affected if the sealing holes are not uniform. In addition, the detector uses the getter to suck air in the vacuum space, but the existing getter is arranged in various positions, but the best air suction effect cannot be achieved.
Disclosure of Invention
The invention aims to provide an uncooled infrared detector and a pixel level packaging structure thereof, which can at least solve part of defects in the prior art.
In order to achieve the above purpose, the embodiments of the present invention provide the following technical solutions: a pixel level packaging structure comprises a microcavity arranged on an infrared CMOS reading circuit, wherein the microcavity comprises a first layer of vacuum space for arranging a packaging component and a second layer of vacuum space arranged on the first layer of vacuum space; the first layer of vacuum space and the second layer of vacuum space are provided with a first exhaust hole on the cavity wall, the second layer of vacuum space is far away from the first layer of vacuum space and is provided with two second exhaust holes, and the first exhaust hole is communicated with the two second exhaust holes.
Furthermore, there are two second-layer vacuum spaces, and the two second-layer vacuum spaces are both arranged on the first-layer vacuum space.
Further, the two second-layer vacuum spaces are symmetrically arranged in the same plane.
Furthermore, an antireflection film covers the cavity wall of the second layer of vacuum space far away from the first layer of vacuum space.
Furthermore, the antireflection film plugs the two second exhaust holes.
Further, the vacuum chamber also comprises a getter arranged in the first layer of vacuum space.
Further, the infrared CMOS readout circuit also comprises a connecting layer arranged on the infrared CMOS readout circuit, and the getter is deposited on the reflecting layer of the connecting layer.
Furthermore, a microbolometer is arranged in the first layer of vacuum space.
Further, at least two of the first and two second exhaust holes are made by a sacrificial layer process.
The embodiment of the invention provides another technical scheme: the uncooled infrared detector further comprises the pixel level packaging structure, and the micro-cavity is arranged on the infrared CMOS reading circuit.
Compared with the prior art, the invention has the beneficial effects that:
1. through setting up first exhaust hole and two second exhaust holes, three exhaust hole combination forms Y type structure, can greatly reduce the degree of difficulty of hole sealing to improve the homogeneity of whole 8 cun within ranges filler holes, greatly improved the holistic homogeneity of detector performance.
2. The deposition exhaust hole grows on the original metal reflection, so that the area of the getter can be maximized, the air suction effect can be maximized, the vacuum degree in the micro cavity is better, the performance of the detector is higher, and the service life is longer; in addition, the reflectivity of the getter can reach 95% compared with that of a standard reflector material Al, so that the problem of ohmic contact between an MEMS and a CMOS and the problem of light reflection can be solved perfectly by growing the getter on the original metal reflection.
Drawings
Fig. 1 is a schematic diagram of a pixel-level package structure according to an embodiment of the invention;
in the reference symbols: 1-a microcavity; 2-a first layer of vacuum space; 20-a first venting aperture; 3-a second layer of vacuum space; 30-a second vent; 4-antireflection coating; 5-a getter; 6-a tie layer; 7-microbolometer; 8-infrared CMOS readout circuit.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, an embodiment of the present invention provides a pixel-level package structure, including a microcavity 1 disposed on an infrared CMOS readout circuit 8, where the microcavity 1 includes a first layer of vacuum space 2 for placing a package component and a second layer of vacuum space 3 disposed on the first layer of vacuum space 2; a first exhaust hole 20 is formed in the cavity wall between the first layer of vacuum space 2 and the second layer of vacuum space 3, two second exhaust holes 30 are formed in one side, far away from the first layer of vacuum space 2, of the second layer of vacuum space 3, and the first exhaust hole 20 is communicated with the two second exhaust holes 30. In this embodiment, through setting up first exhaust hole 20 and two second exhaust holes 30, three exhaust hole combinations form Y type structure, can greatly reduce the degree of difficulty of hole sealing to improve the homogeneity of whole 8 cun within range filler holes, greatly improved the holistic homogeneity of detector performance. Specifically, the microcavity 1 is an interior vacuum cavity, which has two layers of spaces, which are defined as a first vacuum space 2 and a second vacuum space 3 respectively for convenience of description in the direction from bottom to top, and a hole is formed between the first vacuum space 2 and the second vacuum space 3, and the two spaces are connected to define a first vent hole 20, and then two holes are formed in the second vacuum space 3 to define a second vent hole 30, so that the combination of the two second vent holes 30 and the first vent hole 20 can be regarded as a Y-shaped structure, which facilitates the hole filling of the antireflection film 4 and reduces the difficulty of the hole filling process.
Referring to fig. 1, as an optimized solution of the embodiment of the present invention, there are two second-layer vacuum spaces 3, and both the second-layer vacuum spaces 3 are disposed on the first-layer vacuum space 2. In the present embodiment, there are two juxtaposed second-level vacuum spaces 3, which are both located above the first-level vacuum spaces 2, and are located in the same plane and symmetrically arranged. Two of the second exhaust holes 30 are also provided in the other second-layer vacuum space 3, and a first exhaust hole 20 is also provided to communicate with the first-layer vacuum space 2.
Referring to fig. 1, as an optimized solution of the embodiment of the present invention, an anti-reflection film 4 covers the cavity wall of the second layer of vacuum space 3 away from the first layer of vacuum space 2. The antireflection film 4 blocks the two second exhaust holes 30. In this embodiment, the anti-reflection film 4 is used for plugging and filling the hole, and the vacuum degree is less than 1e-3mbar when the anti-reflection film 4 is deposited. The activation of the getter 5 is completed through high temperature (more than or equal to 280 ℃) while hole sealing is carried out.
As an optimized solution of the embodiment of the present invention, please refer to fig. 1, the structure further includes a getter 5 disposed in the first layer of vacuum space 2. In this embodiment, a getter 5 may be used in the package structure for gettering. Preferably, the structure further comprises a connecting layer 6 arranged on the infrared CMOS reading circuit 8, and the getter 5 is deposited on a reflecting layer of the connecting layer 6. In the embodiment, the deposition exhaust hole is grown on the original metal reflection, so that the area of the getter 5 can be maximized, the gettering effect can be maximized, the vacuum degree in the microcavity 1 is better, the performance of the detector is better, and the service life is longer; in addition, the reflectivity of the getter 5 can reach 95% compared with that of a standard reflector material Al (aluminum), so that the getter 5 grown on the original metal reflection can solve the ohmic contact problem of MEMS and CMOS and can also perfectly solve the light reflection problem.
Referring to fig. 1, as an optimized solution of the embodiment of the present invention, a microbolometer 7(bolometer) is disposed in the first-layer vacuum space 2. In the present embodiment, the microbolometer 7 is designed to sense infrared rays radiated in the chamber, and the physical properties of the infrared rays are used for measurement.
Referring to fig. 1, as an optimized solution of the embodiment of the present invention, of the first exhaust hole 20 and the two second exhaust holes 30, at least two second exhaust holes 30 are formed through a sacrificial layer process. In the embodiment, the vent hole is made by a sacrificial layer process, and the Y-shaped vent hole structure is beneficial to releasing the sacrificial layer in the microcavity 1.
The embodiment of the invention provides an uncooled infrared detector which comprises an infrared CMOS (complementary metal oxide semiconductor) reading circuit 8 and the pixel level packaging structure, wherein the microcavity 1 is arranged on the infrared CMOS reading circuit 8. In this embodiment, the above-mentioned package structure is used in an uncooled infrared detector, so that the overall performance of the detector can be improved, and the uncooled infrared sensor can be made to be in the same level as visible light by using pixel packaging, so that the infrared civil market is wider.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. A pixel level packaging structure comprises a microcavity arranged on an infrared CMOS reading circuit, and is characterized in that: the micro-cavity comprises a first layer of vacuum space for arranging the packaging component and a second layer of vacuum space arranged on the first layer of vacuum space; the first layer of vacuum space and the second layer of vacuum space are provided with a first exhaust hole on the cavity wall, the second layer of vacuum space is far away from the first layer of vacuum space and is provided with two second exhaust holes, and the first exhaust hole is communicated with the two second exhaust holes.
2. The pixel level package structure of claim 1, wherein: the number of the second-layer vacuum spaces is two, and the two second-layer vacuum spaces are arranged on the first-layer vacuum space.
3. The pixel level package structure of claim 2, wherein: the two second-layer vacuum spaces are symmetrically arranged in the same plane.
4. The pixel level package structure of claim 1, wherein: and an antireflection film covers the cavity wall of the second layer of vacuum space far away from the first layer of vacuum space.
5. The pixel level package structure of claim 4, wherein: and the antireflection film plugs the two second exhaust holes.
6. The pixel level package structure of claim 1, wherein: the vacuum chamber also comprises a getter arranged in the first layer of vacuum space.
7. The pixel level package structure of claim 6, wherein: the infrared CMOS readout circuit further comprises a connecting layer arranged on the infrared CMOS readout circuit, and the getter is deposited on the reflecting layer of the connecting layer.
8. The pixel level package structure of claim 1, wherein: and a microbolometer is arranged in the first layer of vacuum space.
9. The pixel level package structure of claim 1, wherein: at least two of the first and two second vent holes are made by a sacrificial layer process.
10. An uncooled infrared detector includes an infrared CMOS readout circuit, characterized in that: further comprising a pixel level package structure according to any of claims 1-9, said microcavity being provided on said infrared CMOS readout circuitry.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011399237.3A CN112539846B (en) | 2020-12-04 | 2020-12-04 | Uncooled infrared detector and pixel level packaging structure thereof |
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| CN202011399237.3A CN112539846B (en) | 2020-12-04 | 2020-12-04 | Uncooled infrared detector and pixel level packaging structure thereof |
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| CN112539846A true CN112539846A (en) | 2021-03-23 |
| CN112539846B CN112539846B (en) | 2022-04-22 |
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