CN112532072A - Modular multi-level submodule, valve tower and alternating current withstand voltage test method - Google Patents
Modular multi-level submodule, valve tower and alternating current withstand voltage test method Download PDFInfo
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- CN112532072A CN112532072A CN202010225894.XA CN202010225894A CN112532072A CN 112532072 A CN112532072 A CN 112532072A CN 202010225894 A CN202010225894 A CN 202010225894A CN 112532072 A CN112532072 A CN 112532072A
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- 238000010998 test method Methods 0.000 title description 5
- 239000002184 metal Substances 0.000 claims abstract description 124
- 229910052751 metal Inorganic materials 0.000 claims abstract description 124
- 238000012360 testing method Methods 0.000 claims abstract description 41
- 239000003990 capacitor Substances 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 239000004020 conductor Substances 0.000 claims description 70
- 239000012212 insulator Substances 0.000 claims description 31
- 230000003287 optical effect Effects 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000000498 cooling water Substances 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
- G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
- G01R31/1263—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
- G01R31/129—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation of components or parts made of semiconducting materials; of LV components or parts
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
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Abstract
The disclosure relates to a modular multilevel submodule, a valve tower and an alternating current withstand voltage testing method. A modular multilevel sub-module comprising: the device comprises a direct current capacitor, a power semiconductor unit, an energy taking power supply, a main control circuit and a supporting metal structural part; the direct current capacitor comprises a direct current capacitor anode and a direct current capacitor cathode, and is connected with the power semiconductor unit in parallel; the energy taking power supply takes energy from the direct current capacitor; the power semiconductor unit comprises a power semiconductor device, a radiator and an alternating current output port; the energy taking power supply comprises a power supply metal shell, and the main control circuit comprises a circuit metal shell; the negative electrode of the direct current capacitor is used as an equipotential point; one or more of the power supply metal shell, the circuit metal shell, the radiator and the supporting metal structural part form an equipotential connecting surface, and the equipotential connecting surface is electrically connected with an equipotential point. According to the modular multilevel submodule, the anti-interference capacity of the modular multilevel submodule is improved through equipotential connection of metal parts in the modular multilevel submodule.
Description
Technical Field
The disclosure belongs to the technical field of high-power electronic converter, and particularly relates to a modular multilevel submodule, a valve tower and an alternating current withstand voltage test method.
Background
Equipotential connections originate from the grounding mode of the three-phase ac power distribution system. When the building is in electric design, the impedance among the metal parts is reduced as much as possible in an equipotential connection mode, and the potential difference among the metal parts is eliminated, so that the personal safety and the safety of electric equipment are ensured. For example, in a three-phase four-wire system alternating current distribution system, all exposed conductive parts and external conductive parts are connected with a neutral line in a 'TN-C' grounding mode, so that the purpose of equipotential connection is achieved, and personal safety and equipment safety are guaranteed. Meanwhile, the equipotential connection is realized by connecting the metal conductors together to form a closed or semi-closed electromagnetic shielding protection space, so that a circuit in the space can be prevented from being interfered by external electromagnetic radiation.
In the technical field of power electronics, a modular multilevel converter is formed by cascading a large number of sub-modules and bears hundreds of kilovolts. The sub-modules work in an equipotential mode of floating ground, a large number of metal parts exist inside the sub-modules, the metal parts need to be connected in an equipotential mode, otherwise, potential difference exists among the metal parts, and the sub-modules cannot work normally due to the fact that insulation problems exist in the operation process. In an actual sub-module, the characteristics and functions of each metal component are different, for example, some components are used as a supporting structure for supporting, connecting and fixing other components in the sub-module; some are used for heat dissipation of power semiconductor devices; some are used as electromagnetic shields. Because mutual contact and interaction exist among parts of metal components inevitably, all the metal components cannot be completely decoupled, and a parasitic path exists. Therefore, a reasonable equipotential connection mode needs to be designed according to the interaction relation of metal parts in the modular multilevel sub-module. The submodules are connected in series to form a valve tower, and the problem of equipotential connection is also solved.
Disclosure of Invention
The invention provides a modular multi-level sub-module, a valve tower and an alternating current withstand voltage test method.
One embodiment of the present disclosure provides a modular multilevel sub-module comprising: the device comprises a direct current capacitor, a power semiconductor unit, an energy taking power supply, a main control circuit and a supporting metal structural part; the direct current capacitor comprises a direct current capacitor anode and a direct current capacitor cathode which are connected with the power semiconductor unit in parallel; the power semiconductor unit comprises a power semiconductor device, a radiator and an alternating current output port; the energy taking power supply comprises a power supply metal shell, and the energy taking power supply takes energy from the direct current capacitor; the main control circuit comprises a circuit metal shell; the negative electrode of the direct current capacitor is used as an equipotential point; one or more of the power supply metal shell, the circuit metal shell, the radiator and the supporting metal structural part form at least one equipotential connecting surface, and the equipotential connecting surface is electrically connected with the equipotential point.
According to some embodiments of the present disclosure, the power metal case, the circuit metal case, the heat sink and the support metal structure form an equipotential junction surface.
According to some embodiments of the disclosure, the number of equipotential bonding surfaces is two or three.
According to some embodiments of the present disclosure, the power source metal casing, the circuit metal casing, the heat sink and the supporting metal structure respectively form equipotential connection surfaces, and each of the equipotential connection surfaces is electrically connected to the equipotential point.
According to some embodiments of the present disclosure, the equipotential point is connected to a conductive bar, and all or a portion of the equipotential connection surface is electrically connected to the conductive bar.
According to some embodiments of the present disclosure, the modular multilevel sub-module further comprises an insulating component disposed between adjacent ones of the equipotential connection faces; or, the insulating part is arranged on the equipotential connecting surface.
According to some embodiments of the disclosure, the power source metal casing forms an equipotential connection surface, and among connection points of the plurality of equipotential connection surfaces and the equipotential point, the connection point of the equipotential connection surface formed by the power source metal casing is closest to the dc capacitor negative electrode.
According to some embodiments of the present disclosure, the power supply metal housing and the circuit metal housing are incorporated into a unitary metal housing.
According to some embodiments of the present disclosure, the energy-extracting power source includes a positive electrode and a negative electrode, and the negative electrode of the energy-extracting power source is connected to the equipotential point or the equipotential connection surface through an electric conductor; or the negative electrode of the energy-taking power supply is connected with the power supply metal shell through a conductor; or the positive electrode or the negative electrode of the energy taking power supply is connected with the power supply metal shell through a capacitor.
According to some embodiments of the present disclosure, the main control circuit comprises a power supply, the main control circuit power supply comprises a positive electrode and a negative electrode, and the negative electrode of the main control circuit power supply is connected to the equipotential point or the equipotential connection surface through an electric conductor; or the negative electrode of the main control circuit power supply is connected with the circuit metal shell through a conductor; or the anode or the cathode of the main control circuit power supply is connected with the circuit metal shell through a capacitor.
One embodiment of the present disclosure provides a valve tower comprising at least one valve section and a plurality of support insulators, the valve section comprising: the modularized multi-level sub-modules are sequentially connected in series, and the alternating current output ports of the modularized multi-level sub-modules are sequentially connected in series; a plurality of valve section support structures for supporting the valve sections, the valve section support structures being electrically connected to the isoelectric points or AC output ports of the closest modular multilevel sub-modules; the top of the supporting insulator is connected with the valve section supporting structural member, and the bottom of the supporting insulator is connected with the ground potential.
According to some embodiments of the present disclosure, the valve tower further comprises a cooling water pipe comprising at least one water electrode and/or a cable tray comprising at least one cable tray potential fixing point; and the water electrode and/or the optical cable groove potential fixing point is electrically connected with the nearest equipotential point or alternating current output port of the modular multi-level sub-module.
According to some embodiments of the present disclosure, the valve tower includes M equipotential points with different potentials, and a total number of N equipotential points with different potentials and/or ac output ports are connected to a planar metal structure disposed on a periphery of the valve section, where M is an integer greater than or equal to 2, and N is an integer greater than or equal to 2 and less than or equal to M.
According to some embodiments of the present disclosure, the bottom portions of the plurality of support insulators are connected by a bottom connection conductor, which is connected to a ground potential.
According to some embodiments of the present disclosure, the supporting insulator includes a plurality of insulators, the insulators are connected in series by metal terminals, and the metal terminals of the supporting insulators are connected by terminal connecting conductors.
According to some embodiments of the disclosure, the bottom and the head connection conductors are grid-shaped.
An embodiment of the present disclosure provides an ac withstand voltage testing method of the valve tower as described above, including: short-circuiting the equipotential points of different potentials of the valve tower; one end of the alternating current withstand voltage test power supply is connected with the equipotential point of the valve tower, and the other end of the alternating current withstand voltage test power supply is connected with the ground potential; gradually increasing the output voltage of the alternating current withstand voltage test power supply to a preset voltage, and if the preset voltage can be kept for a preset time, the alternating current withstand voltage test of the valve tower is qualified; and reducing the output voltage of the alternating current withstand voltage test power supply to zero.
According to some embodiments of the disclosure, if the valve tower comprises a bottom connection conductor, an equal potential body equivalent to the bottom connection conductor is provided on the ground, the equal potential body is grounded, and the valve body with the bottom connection conductor removed is provided on the equal potential body.
According to some embodiments of the present disclosure, determining the minimum capacity of the ac withstand voltage test power supply includes: respectively calculating the distributed capacitance values of the top of the valve tower to the top of the valve hall and the side of the valve tower to the wall; if the valve tower comprises a bottom connecting conductor and does not comprise an end connecting conductor, calculating the distributed capacitance value of the bottom of the valve section to the ground potential; if the valve tower comprises a bottom connecting conductor and an end connecting conductor, calculating the series value of the distributed capacitance of the bottom of the valve section to the end connecting conductor and the distributed capacitance of the end connecting conductor to the ground potential; if the valve tower does not comprise the end head connecting electric conductor, summing all the distributed capacitance values, and if the valve tower comprises the end head connecting electric conductor, summing all the distributed capacitance values and the serial values to obtain a distributed capacitance sum sigma Cb(ii) a Determining the minimum capacity S of the AC withstand voltage test power supplymin＝Utest 2·ω·∑CbWhere ω is 2 π f, f is the operating frequency, UtestAnd outputting preset voltage for the alternating current withstand voltage test power supply.
The modularized multi-level sub-module disclosed by the invention reasonably clamps the internal potential of the sub-module in an equipotential connection mode of an internal metal piece, and improves the anti-interference capability of the sub-module; utilize insulating part to install additional between the equipotential connection face, or directly set up insulating part on the equipotential connection face with the replacement part structure, eliminated parasitic tie point through the isolation mode, eliminated the intercoupling between the equipotential connection face, make the potential distribution of whole submodule piece more balanced.
The valve tower with the metal structure equipotential connection comprises equipotential-connected modular multilevel sub-modules, and a planar metal structure is arranged on the periphery of the valve tower to form an equipotential surface, so that the number of equipotential points externally presented by the whole valve tower is reduced; the bottoms and the peripheral areas of the plurality of supporting insulators of the valve tower are connected through the bottom connecting electric conductors, an equipotential surface is constructed at the bottom of the valve tower and is connected with the ground potential of the valve hall, so that the potential distribution of the whole valve tower is more stable, and the integral electromagnetic shielding effect is formed.
The alternating-current voltage withstand test method for the valve tower ensures the safety and the result accuracy of the voltage withstand test.
Drawings
FIG. 1 is a first schematic diagram of a modular multilevel sub-module of an embodiment of the present disclosure;
FIG. 2 is a second schematic diagram of a modular multilevel sub-module in accordance with an embodiment of the present disclosure;
FIG. 3 is a third schematic diagram of a modular multilevel sub-module of an embodiment of the present disclosure;
FIG. 4 is a fourth schematic diagram of a modular multilevel sub-module of an embodiment of the present disclosure;
FIG. 5 is an equivalent circuit diagram of a parasitic connection point of an embodiment of the disclosure;
FIG. 6 is a fifth schematic diagram of a modular multilevel sub-module of an embodiment of the disclosure;
FIG. 7 is a sixth schematic diagram of a modular multilevel sub-module of an embodiment of the present disclosure;
FIG. 8 is a schematic view of a valve tower according to an embodiment of the present disclosure;
fig. 9 is a flowchart of an ac withstand voltage test according to an embodiment of the present disclosure.
Wherein,
100. modular multilevel sub-modules; 1. a direct current capacitor; 2. a power semiconductor unit; 3. an energy taking power supply; 31. a power supply metal housing; 4. a heat sink; 5. a master control circuit; 51. a circuit metal housing; 6. supporting a metal structural member; 7. a conductive bar; 8. an AC output port; 9. an insulating member;
E. an isoelectric point; l1, conductive wire; l2, mechanical fixation, contact, shorting line or shorting copper bar;
200. a valve tower; 210. a support insulator; 211. an insulator; 212. a metal end; 213. supporting the top of the insulator; 214. supporting the bottom of the insulator; 220. a valve section support structure; 230. a planar metal structure; 241 bottom is connected with a conductor; 242 are connected to the electrical conductors.
Detailed Description
In the following, only certain exemplary embodiments are briefly described. As those skilled in the art can appreciate, the described embodiments can be modified in various different ways, without departing from the spirit or scope of the present disclosure. Accordingly, the drawings and description are to be regarded as illustrative in nature, and not as restrictive.
In the description of the present disclosure, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "straight", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and therefore should not be considered as limiting the present disclosure. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present disclosure, "a plurality" means two or more unless specifically limited otherwise.
Throughout the description of the present disclosure, it is to be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection, either mechanically, electrically, or otherwise in communication with one another; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present disclosure can be understood by those of ordinary skill in the art as appropriate.
In the present disclosure, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise the first and second features being in direct contact, or may comprise the first and second features being in contact, not directly, but via another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly above and obliquely above the second feature, or simply meaning that the first feature is at a lesser level than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the disclosure. To simplify the disclosure of the present disclosure, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present disclosure. Moreover, the present disclosure may repeat reference numerals and/or reference letters in the various examples, which have been repeated for purposes of simplicity and clarity and do not in themselves dictate a relationship between the various embodiments and/or arrangements discussed. In addition, the present disclosure provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
The preferred embodiments of the present disclosure will be described in conjunction with the appended drawings, it being understood that the preferred embodiments described herein are merely for purposes of illustrating and explaining the present disclosure and are not intended to limit the present disclosure
As shown in fig. 1, an embodiment of the present disclosure provides a modular multilevel sub-module 100, which implements an equipotential connection. A modularized multi-level sub-module 100 comprises a direct current capacitor 1, a power semiconductor unit 2, an energy-taking power supply 3, a main control circuit 5 and a supporting metal structural part 6.
The direct current capacitor 1 comprises a direct current capacitor anode and a direct current capacitor cathode and is connected with the power semiconductor unit 2 in parallel. The power semiconductor unit 2 includes a power semiconductor device, a heat sink 4, and an ac output port 8. The energy taking power supply 3 takes energy from the direct current capacitor 1, and in the embodiment, the energy taking power supply 3 supplies power to the main control circuit 5. The main control circuit 5 samples the voltage of the dc capacitor 1. The energy-taking power supply 3 comprises a power supply metal shell 31, and the main control circuit 5 comprises a circuit metal shell 51.
The present disclosure uses a dc capacitor cathode as an isoelectric point E. One or more of the power supply metal casing 31, the circuit metal casing 51, the heat sink 4 and the support metal structure 6 form at least one equipotential bonding surface. There are various forms for forming the equipotential bonding surface, and all the equipotential bonding surfaces are electrically connected to the equipotential point E. The anti-interference capability of the modular multilevel sub-module 100 can be improved by equipotential connection of metal pieces in the modular multilevel sub-module 100.
The equipotential connection method of the modular multilevel sub-module 100 of this embodiment is as follows: the power metal shell 31, the circuit metal shell 51, the heat sink 4 and the supporting metal structure 6 are connected by mechanical fixing, contact, short-circuit lines or short-circuit copper bars L2 to form an equipotential connecting surface. The equipotential connecting surface is electrically connected to the equipotential point E through a conducting wire L1. Equipotential connection of metal pieces within the modular multilevel sub-module 100 is achieved. In this embodiment, a point on the heat sink 4 is connected to the isoelectric point E, which may be referred to as a "single-point connection".
As shown in fig. 2, the second modular multilevel sub-module 100 is equipotentially connected by: two or three equipotential bonding surfaces are formed. For example, the power metal shell 31 is connected with the circuit metal shell 51 to form an equipotential connection surface; the heat sink 4 and the supporting metal structure 6 form another equipotential bonding surface. The two equipotential connecting surfaces are electrically connected to an equipotential point E through a conducting wire, which may be referred to as "packet connection". Three equipotential connecting surfaces can also be arranged according to requirements.
As shown in fig. 3, the third modular multilevel sub-module 100 is equipotentially connected: the power supply metal casing 31, the circuit metal casing 51, the heat sink 4 and the support metal structure 6 form equipotential connection surfaces, respectively. Each equipotential connection surface is electrically connected with an equipotential point E through a conducting wire, which can be called as "independent connection".
As shown in fig. 4, according to an alternative embodiment of the present disclosure, the isoelectric point E is led out and connected to a conductive bar 7. The conductive bar 7 is a metal conductive bar. Each equipotential bonding surface can be electrically connected to the conductive bar 7, or can be directly connected to the equipotential point E.
As shown in fig. 5, the parasitic connection points are caused by metal contact or mechanical connection. In this embodiment, parasitic connection points may exist between different equipotential connection surfaces. If the connection is made in groups, a contact resistance R70 exists between the circuit metal housing 51 and the supporting metal structure 6 due to the mechanical fixation. R31 and R51 are equivalent resistances of equipotential connection surfaces formed by the power metal shell 31 and the circuit metal shell 51, R4 and R6 are equivalent resistances of equipotential connection surfaces formed by the heat sink 4 and the supporting metal structure 6, and due to the existence of the contact resistance R70, a parasitic current loop exists between two equipotential connection surfaces which are connected in groups, so that an unpredictable potential difference is caused between the two equipotential connection surfaces.
As shown in fig. 6 and 7, according to an alternative embodiment of the present disclosure, the present embodiment eliminates the parasitic connection point by isolation. Modular multilevel sub-module 100 further comprises an insulating component 9. The insulating part 9 may be arranged between adjacent equipotential bonding surfaces, for example between the metallic casing 51 of the circuit and the supporting metallic structure 6. Alternatively, the insulating member 9 may be disposed on the equipotential bonding surface instead of a portion of the equipotential bonding surface, for example, the insulating member 9 may be disposed on the supporting metal structure 6 instead of a portion of the supporting metal structure 6.
Parasitic connection points are eliminated by the insulating component 9 in an isolation mode, mutual coupling among equipotential connection surfaces is eliminated, and potential distribution of the whole sub-module is more balanced. In this embodiment, after the insulating member 9 is used to isolate the parasitic connection point, the contact resistor R70 is disconnected, and the parasitic current is eliminated, so that the equipotential connection can obtain a better effect.
According to an optional technical scheme of the present disclosure, when the power source metal casing 51 forms an equipotential connection surface alone, among connection points of the plurality of equipotential connection surfaces and the equipotential point E, the connection point of the equipotential connection surface formed by the power source metal casing 51 is closest to the negative electrode of the dc capacitor. The arrangement can avoid the interference of external electromagnetism to the main control circuit as much as possible.
According to an alternative embodiment of the present disclosure, the power metal housing 31 and the circuit metal housing 51 are combined into a single metal housing for ease of manufacturing. The energy-extracting power supply 3 and other elements of the main control circuit 5 are arranged in a whole metal shell.
According to an optional technical scheme of the present disclosure, the energy taking power supply 3 comprises a positive electrode and a negative electrode. The negative electrode of the energy taking power supply 3 is connected with the equipotential point E or the equipotential connecting surface through a conductor; or,
the negative electrode of the energy-taking power supply 3 is connected with the power supply metal shell 31 through a conductor; or,
the positive pole or the negative pole of the energy-taking power supply 3 is connected with the power metal shell 31 through a capacitor, so that the anti-interference capability of the modular multilevel sub-module 100 is further improved.
According to an optional technical solution of the present disclosure, the main control circuit 5 may further include its own power supply, as needed. The main control circuit power supply comprises an anode and a cathode. The negative electrode of the main control circuit power supply is connected with the equipotential point or the equipotential connecting surface through a conductor; or,
the negative electrode of the main control circuit power supply is connected with the circuit metal shell through a conductor; or,
the positive pole or the negative pole of the main control circuit power supply is connected with the circuit metal shell through a capacitor, so that the anti-interference capability of the modular multilevel submodule 100 is further improved.
As shown in fig. 8, embodiments of the present disclosure provide a valve tower 200 with a metal structure equipotential connection. Valve tower 200 includes at least one valve section and a plurality of support insulators 210.
The valve section includes a plurality of modular multilevel submodules 100 as described above and a plurality of valve section support structures 220. The ac output ports of the plurality of modular multilevel sub-modules 100 are serially connected in sequence. The isoelectric points of the modular multilevel submodules 100 which are connected in series in sequence are respectively E1-En. Valve section support structure 220 is a metal member disposed in the middle or end of the series of modular multilevel submodules for support of the valve section. The two valve section support structures merge into one when adjacent. Valve segment support structure 220 is electrically connected to the isoelectric point E or ac output port of the nearest modular multilevel sub-module 100. The top 213 of the support insulator is connected to a valve section support structure 220 and the bottom 214 of the support insulator is connected to ground potential via an electrical conductor. The metal structure of the valve tower 200 of the present embodiment is equipotential connected, which is beneficial to improving the performance of the valve tower.
According to an optional technical scheme of the present disclosure, the valve tower 200 further comprises a cooling water pipe and/or an optical cable groove box, wherein the cooling water pipe comprises at least one water electrode, and the optical cable groove box comprises at least one optical cable groove potential fixing point; the water electrode and/or the optical cable groove potential fixing point is electrically connected with the nearest equipotential point or alternating current output port of the modular multilevel sub-module 100.
According to an optional technical scheme of the present disclosure, the valve tower includes M equipotential points with different potentials, and the total number of the equipotential points with different potentials and/or the ac output ports is N, and the valve tower is connected to the planar metal structure 230 to form an equipotential surface. That is, the planar metal structure 230 may be connected to an equipotential point and may also be connected to an ac output port. Wherein M is an integer of 2 or more, and N is an integer of 2 or more and M or less. A planar metal structure 230 is disposed at the periphery of the valve section. In this embodiment, 1 equipotential point is selected to connect to the planar metal structure 230, and 1 ac output port is selected to connect to another planar metal structure 230. Two planar metal structures 230 are provided at the periphery of the valve segment to reduce the equipotential points presented to the outside by the valve tower 200. More planar metal structures 230 may be provided as desired, and the planar metal structures 230 may be connected to the valve section support structure 220.
According to an alternative embodiment of the present disclosure, the bottom portions 214 of the plurality of supporting insulators may also include a peripheral region of the bottom portion, which is connected by a bottom connecting conductor 241, and the bottom connecting conductor 241 is connected to a ground potential. The bottoms 214 and the peripheral areas of the supporting insulators of the valve tower are connected through the bottom connecting conductor 241, an equipotential surface is constructed at the bottom of the valve tower and is connected with the ground potential of a valve hall, so that the potential distribution of the whole valve tower 200 is more stable, and the integral electromagnetic shielding effect is formed.
According to an alternative aspect of the present disclosure, the supporting insulator 210 includes a plurality of insulators 211 and metal terminals 212. Adjacent insulators 211 are connected in series by metal terminations 212. The metal terminals 212 of the plurality of support insulators 210 are connected by terminal connection conductors 242. Optionally, metal terminations 212 are connected at the same height from ground. The terminal connecting conductor 242 can reduce the electric field intensity of the ground tip of the valve tower 200 and reduce the local discharge amount. The tip connection conductor 242 is at a floating potential.
According to an alternative embodiment of the present disclosure, the bottom connecting conductor 241 and the end connecting conductor 242 are both grid-shaped. The grids can be square holes or rectangular holes, and the open area of the grids is in direct proportion to the height of the insulator and is not more than 6.5 square meters. In this embodiment, the open area of the grid of the bottom connecting conductor 241 is 0.5 square meter, and the open area of the grid of the tip connecting conductor 242 is 3 square meters. If necessary, the bottom connecting conductor 241 and the tip connecting conductor 242 may be planar and do not include a grid.
As shown in fig. 9, an embodiment of the present disclosure provides an ac withstand voltage testing method of the above valve tower, including:
s110, short-circuiting equipotential points of different potentials of the valve tower.
And S120, connecting one end of the alternating current withstand voltage test power supply with the equipotential point of the valve tower, and connecting one end of the alternating current withstand voltage test power supply with the ground potential.
S130, gradually increasing the output voltage of the alternating current withstand voltage test power supply to a preset voltage, and if the preset voltage can be kept for a preset time, the alternating current withstand voltage test of the valve tower is qualified; if the output voltage of the alternating current withstand voltage test power supply is obviously reduced from the preset voltage within the preset time, the alternating current withstand voltage test of the valve tower is unqualified; the preset voltage and the preset time are determined according to relevant standards.
And S140, reducing the output voltage of the alternating current withstand voltage test power supply to zero.
According to an optional technical solution of the present disclosure, if the valve tower 200 includes the bottom connecting conductor 241, since most of the tests on the valve tower 200 are performed in a laboratory, it is inconvenient to set the bottom connecting conductor 241 in the laboratory, and before the step S110, the method includes the steps of: an equivalent potential equivalent to the bottom connecting conductor 241 is provided on the ground, the equivalent potential is grounded, and the valve body from which the bottom connecting conductor is removed is provided on the equivalent potential.
According to an optional technical scheme of the present disclosure, determining the minimum capacity of the alternating current withstand voltage test power supply comprises the steps of:
s210, respectively calculating distributed capacitance values of the top of the valve tower to the top of the valve hall and the side of the valve tower to the wall;
s220, if the valve tower comprises a bottom connecting conductor but does not comprise an end connecting conductor, calculating a distributed capacitance value of the bottom of the valve section to the ground potential; if the valve tower comprises a bottom connecting conductor and an end connecting conductor, calculating the series value of the distributed capacitance of the end connecting conductor from the bottom of the valve section to the end and the distributed capacitance of the end connecting conductor to the ground potential;
s230, if the valve tower does not comprise an end head connecting conductor, summing all the distributed capacitance values, and if the valve tower comprises an end head connecting conductor, summing all the distributed capacitance values and the serial values to obtain a distributed capacitance sum sigma Cb(ii) a Determining minimum capacity S of AC withstand voltage test power supplymin＝Utest 2·ω·∑CbWhere ω is 2 π f, f is the operating frequency, UtestAnd outputting preset voltage for the alternating current withstand voltage test power supply.
The above description is only exemplary of the present disclosure and should not be taken as limiting the disclosure, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present disclosure should be included in the scope of protection of the present disclosure.
Finally, it should be noted that: although the present disclosure has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the disclosure. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure.
Claims (19)
1. A modular multilevel sub-module comprising: the device comprises a direct current capacitor, a power semiconductor unit, an energy taking power supply, a main control circuit and a supporting metal structural part;
the direct current capacitor comprises a direct current capacitor anode and a direct current capacitor cathode which are connected with the power semiconductor unit in parallel; the power semiconductor unit comprises a power semiconductor device, a radiator and an alternating current output port; the energy taking power supply comprises a power supply metal shell, and the energy taking power supply takes energy from the direct current capacitor; the main control circuit comprises a circuit metal shell; it is characterized in that the preparation method is characterized in that,
the negative electrode of the direct current capacitor is used as an equipotential point;
one or more of the power source metal shell, the circuit metal shell, the radiator and the support metal structural member form at least one equipotential connection surface, and the equipotential connection surface is electrically connected with the equipotential point.
2. The modular multilevel submodule of claim 1, wherein the power supply metal housing, the circuit metal housing, the heat sink and the support metal structure form an equipotential junction plane.
3. The modular multilevel sub-module according to claim 1, wherein the number of equipotential connecting surfaces is two or three.
4. The modular multilevel submodule of claim 1, wherein the power supply metal housing, the circuit metal housing, the heat sink and the support metal structure respectively form equipotential connection surfaces, and each of the equipotential connection surfaces respectively electrically connects the equipotential points.
5. The modular multilevel submodule of claim 1, wherein the equipotential points are connected to a conductive row, and all or a portion of the equipotential connection surfaces are electrically connected to the conductive row.
6. The modular multilevel submodule of claim 1, further comprising an insulating member,
the insulating parts are arranged between the adjacent equipotential connecting surfaces; or,
the insulating part is arranged on the equipotential connecting surface.
7. The modular multilevel submodule of claim 1, wherein the power supply metal housing forms an equipotential connection surface, and a connection point of the equipotential connection surface formed by the power supply metal housing, among connection points of the plurality of equipotential connection surfaces and the equipotential point, is closest to the dc capacitor negative electrode.
8. The modular multilevel submodule of claim 1, wherein the power supply metal housing and the circuit metal housing are combined into a unitary metal housing.
9. The modular multilevel submodule of claim 1, wherein the energy-extracting power source comprises a positive pole and a negative pole,
the cathode of the energy taking power supply is connected with the equipotential point or the equipotential connecting surface through an electric conductor; or,
the negative electrode of the energy taking power supply is connected with the power supply metal shell through a conductor; or,
and the anode or the cathode of the energy taking power supply is connected with the power supply metal shell through a capacitor.
10. The modular multilevel submodule of claim 1, wherein the master circuit comprises a power supply, the master circuit power supply comprises a positive pole and a negative pole,
the negative electrode of the main control circuit power supply is connected with the equipotential point or the equipotential connecting surface through a conductor; or,
the negative electrode of the main control circuit power supply is connected with the circuit metal shell through a conductor; or,
and the anode or the cathode of the main control circuit power supply is connected with the circuit metal shell through a capacitor.
11. A valve tower comprising at least one valve section and a plurality of support insulators, wherein the valve section comprises:
a plurality of modular multilevel sub-modules according to any one of claims 1 to 10, wherein the alternating current output ports of the modular multilevel sub-modules are connected in series in sequence;
a plurality of valve section support structures for supporting the valve sections, the valve section support structures being electrically connected to the isoelectric points or AC output ports of the closest modular multilevel sub-modules;
the top of the supporting insulator is connected with the valve section supporting structural member, and the bottom of the supporting insulator is connected with the ground potential.
12. The valve tower of claim 11, further comprising a cooling water pipe and/or a cable tray, wherein the cooling water pipe comprises at least one water electrode, and the cable tray comprises at least one cable tray potential fixing point; and the water electrode and/or the optical cable groove potential fixing point is electrically connected with the nearest equipotential point or alternating current output port of the modular multi-level sub-module.
13. The valve tower of claim 11, wherein the valve tower comprises M equipotential points with different potentials, and a total number N of the equipotential points with different potentials and/or ac output ports are connected to a planar metal structure disposed at the periphery of the valve segment, where M is an integer greater than or equal to 2, and N is an integer greater than or equal to 2 and less than or equal to M.
14. The valve tower of claim 11, wherein the bottoms of the plurality of support insulators are connected by bottom connection conductors, the bottom connection conductors being connected to ground potential.
15. The valve tower of claim 14, wherein the support insulator comprises a plurality of insulators, wherein a plurality of the insulators are connected in series by metal terminations, and wherein the metal terminations of the plurality of support insulators are connected by termination connection conductors.
16. The valve tower of claim 15, wherein the bottom and end connection conductors are grid-shaped.
17. An alternating current withstand voltage testing method of the valve tower according to any one of claims 11 to 16, comprising:
short-circuiting the equipotential points of different potentials of the valve tower;
one end of the alternating current withstand voltage test power supply is connected with the equipotential point of the valve tower, and the other end of the alternating current withstand voltage test power supply is connected with the ground potential;
gradually increasing the output voltage of the alternating current withstand voltage test power supply to a preset voltage, and if the preset voltage can be kept for a preset time, the alternating current withstand voltage test of the valve tower is qualified;
and reducing the output voltage of the alternating current withstand voltage test power supply to zero.
18. The AC withstand voltage testing method according to claim 17,
if the valve tower comprises a bottom connecting conductor, an equivalent potential body which is equal to the bottom connecting conductor is arranged on the ground, the equivalent potential body is grounded, and the valve body without the bottom connecting conductor is arranged on the equivalent potential body.
19. The ac withstand voltage testing method according to claim 17, wherein determining the minimum capacity of the ac withstand voltage test power supply includes:
respectively calculating the distributed capacitance values of the top of the valve tower to the top of the valve hall and the side of the valve tower to the wall;
if the valve tower comprises a bottom connecting conductor and does not comprise an end connecting conductor, calculating the distributed capacitance value of the bottom of the valve section to the ground potential; if the valve tower comprises a bottom connecting conductor and an end connecting conductor, calculating the series value of the distributed capacitance of the bottom of the valve section to the end connecting conductor and the distributed capacitance of the end connecting conductor to the ground potential;
if the valve tower does not comprise the end head connecting electric conductor, summing all the distributed capacitance values, and if the valve tower comprises the end head connecting electric conductor, summing all the distributed capacitance values and the serial values to obtain a distributed capacitance sum sigma Cb；
Determining the minimum capacity S of the AC withstand voltage test power supplymin＝Utest 2·ω·∑Cb，
Where ω is 2 π f, f is the operating frequency, UtestAnd outputting preset voltage for the alternating current withstand voltage test power supply.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN202010225894.XA CN112532072B (en) | 2020-03-26 | 2020-03-26 | Modular multi-level submodule, valve tower and alternating current withstand voltage test method |
| PCT/CN2021/086990 WO2021190667A1 (en) | 2020-03-26 | 2021-04-13 | Modular multilevel sub-module, valve tower, and alternating current withstand voltage test method |
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| CN202010225894.XA CN112532072B (en) | 2020-03-26 | 2020-03-26 | Modular multi-level submodule, valve tower and alternating current withstand voltage test method |
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| WO2021190667A1 (en) * | 2020-03-26 | 2021-09-30 | 南京南瑞继保电气有限公司 | Modular multilevel sub-module, valve tower, and alternating current withstand voltage test method |
| CN114497766A (en) * | 2021-12-31 | 2022-05-13 | 南方电网调峰调频发电有限公司 | Chain type energy storage system |
| WO2024132220A1 (en) * | 2022-12-19 | 2024-06-27 | Hitachi Energy Ltd | Converter valve assembly |
| WO2024132221A1 (en) * | 2022-12-19 | 2024-06-27 | Hitachi Energy Ltd | Converter valve assembly |
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Also Published As
| Publication number | Publication date |
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| WO2021190667A1 (en) | 2021-09-30 |
| CN112532072B (en) | 2022-03-29 |
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