CN112530825B - On-chip multi-parameter measuring device - Google Patents
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- CN112530825B CN112530825B CN202011348038.XA CN202011348038A CN112530825B CN 112530825 B CN112530825 B CN 112530825B CN 202011348038 A CN202011348038 A CN 202011348038A CN 112530825 B CN112530825 B CN 112530825B
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
Abstract
The invention provides an on-chip multi-parameter measuring device, comprising: a millimeter wave test system; the two input ends of the combiner are respectively connected with the two test output ends of the millimeter wave test system, and the multi-band test signals are applied to the probe station; a probe station; the radio frequency input end of the BDC component is connected with the output end of the probe station, the radio frequency output end of the BDC component is connected with the test input end of the millimeter wave test system, the noise output end of the BDC component is connected with the noise input end of the millimeter wave test system, and on-chip multi-parameter measurement is achieved through switch switching. The invention is suitable for testing the wafer level electrical performance parameters up to 110 GHz; reducing test errors caused by testing connection cables and the like; the execution efficiency of test measurement is improved by adopting a switch switching method, and the components of the BDC assembly are prevented from being damaged; meanwhile, the normal temperature test and the high and low temperature test are supported; and meanwhile, passive parameter testing and active parameter testing are supported.
Description
Technical Field
The invention relates to the technical field of microelectronic test and measurement, in particular to an on-chip multi-parameter measuring device.
Background
Accurate measurement of wafer electrical performance parameters is an essential link in semiconductor manufacturing research and development and process verification, and is an important criterion for inspecting the wafer production process. The wafer electrical performance parameter test comprises linear parameter measurement and nonlinear parameter measurement, wherein the linear parameter measurement and the nonlinear parameter measurement are subdivided into a plurality of index parameters, and the measurement of each index parameter has higher requirements on accuracy.
The existing method for measuring the electrical performance parameters of the wafer relies on a structure that a plurality of instruments construct a plurality of parameter testing and measuring platforms, and generally, a single testing platform is used for carrying out partial targeted parameter measurement and then another testing platform is replaced for measurement, so that the test of the parameters with multiple indexes cannot be completed in a single test. In the test process, any behavior of changing the original test environment or test conditions may cause uncertainty of the test result and generation of test errors, which is very prominent in the frequency band above 50GHz, and the test efficiency is greatly reduced by continuously replacing the instrument connection or the test platform. It is also particularly emphasized that among the many electrical performance parameters, Noise Figure (NF) measurement is one of the key elements in device characterization, and there are two main methods for testing the noise figure at present: y factor method and cold source method.
The Y-factor method uses a calibrated noise source-including specially designed on/off noise diodes that present a room temperature termination load to the device under test when the diodes are off, i.e., no bias current is present. When the diode is reverse biased, the avalanche effect it produces an electrical noise (i.e., an excess noise ratio ENR) that exceeds room temperature termination loads. Using a noise source, two measurements of the noise power are obtained at the output port of the device under test, and the ratio of these two measurements (called the Y-factor) is used to calculate the noise figure. While the Y factor is used to measure the device under test, the noise of the noisy receiver under test is also measured. To remove the effect of the additive noise on the measurement results, calibration is required before the measurement starts, and then the noise figure of the internal noise receiver is measured. The calibration process can only calibrate the noise of the test instrument, and the connection part between the noise source output port surface and the input end of the tested device and the part before the tested device is output to the input end of the test instrument cannot be calibrated accurately and quantitatively.
The cold source method is that the input end of the tested device is always at room temperature, only noise power measurement is carried out, and the measured noise is amplified input noise plus noise generated by an amplifier or a frequency converter. The noise factor can be calculated by removing the known noise of the amplifier (or frequency converter) from the measurement results, leaving only the noise generated by the device under test. The cold source method testing condition with higher precision can be achieved through a two-port vector error correction technology of the vector network analyzer. However, the noise coefficient is tested by a pure cold source method, so that the tested piece can not keep completely consistent test conditions in the process of testing indexes such as IMD (in-mold decoration), S (S) parameters, gain compression and the like, and the multi-parameter test needs to be carried out by continuously replacing instruments for connection or building a new test platform, so that the test error which is difficult to avoid is caused.
Therefore, how to implement multi-parameter measurement, reduce the test error of multi-parameter measurement, and improve the test accuracy has become one of the problems to be solved by those skilled in the art.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art devices, the present invention provides a multi-parameter measuring device for wafer, which is used to solve the problem of inaccurate test result in the prior art devices.
To achieve the above and other related objects, the present invention provides an on-chip multi-parameter measuring apparatus, comprising:
the device comprises a millimeter wave test system, a combiner, a probe station and a BDC assembly;
two input ends of the combiner are respectively connected with two test output ends of the millimeter wave test system, an output end of the combiner is connected with an input end of the probe station, and test signals of multiple frequency bands are applied to the probe station;
the output end of the probe station is connected with the radio frequency input end of the BDC component;
the radio frequency output end of the BDC component is connected with the test input end of the millimeter wave test system, the noise output end of the BDC component is connected with the noise input end of the millimeter wave test system, and a reference signal and a control signal are obtained from the millimeter wave test system; the BDC component realizes on-chip multi-parameter measurement through switch switching.
Optionally, the on-chip multi-parameter measurement apparatus further includes a calibration component, and the calibration component is connected to the millimeter wave test system before testing, so as to calibrate the millimeter wave test system.
Optionally, the on-chip multi-parameter measurement apparatus further includes a power meter, and the power meter is connected to the millimeter wave test system before the test, so as to calibrate the output power of the millimeter wave test system.
Optionally, the on-chip multi-parameter measurement device includes a linear parameter test and a non-linear parameter test, where the linear parameter includes at least one of an S parameter, a gain, a noise coefficient, a harmonic suppression, a phase, and an on-off isolation, and the non-linear parameter includes at least one of a third-order intermodulation point, a P-1, and a saturation output level.
Optionally, the probe station comprises a manual probe station, a semi-automatic probe station, a full-automatic probe station or a probe station with a temperature control system.
Optionally, the frequency of the reference signal is set to 10 MHz.
Optionally, the on-chip multi-parameter measurement device is applied to the HF band to the THz band.
Optionally, the frequency of the radio frequency signal covered by the sheet multi-parameter measuring device is set to be above 50 GHz.
Optionally, the BDC component includes a first high-frequency broadband switch, a low-noise amplifier, a local oscillator signal generating unit, a multiplier, and a frequency converter;
the first end of the first high-frequency broadband switch is used as the radio-frequency input end of the BDC component, the second end of the first high-frequency broadband switch is used as the radio-frequency output end of the BDC component, the third end of the first high-frequency broadband switch is connected with the input end of the low-noise amplifier, and the radio-frequency input end of the BDC component is connected to the radio-frequency output end or the input end of the low-noise amplifier based on a switching control signal output by the millimeter wave test system;
the low-noise amplifier receives and amplifies the output signal of the first high-frequency broadband switch;
the local oscillator signal generating unit selects a built-in local oscillator signal source or an external local oscillator signal source as a local oscillator signal based on the reference signal output by the millimeter wave test system;
the multiplier is connected with the output end of the local oscillation signal generating unit and is used for multiplying the local oscillation signal;
the frequency converter is connected with the output ends of the low noise amplifier and the multiplier, mixes the output signals of the low noise amplifier and the multiplier and outputs a noise signal.
More optionally, the local oscillation signal generating unit includes a reference signal detection comparing circuit, an oscillator, and a second high-frequency broadband switch;
the reference signal detection comparison circuit receives a reference signal output by the millimeter wave test system, compares the reference signal with a reference signal and outputs a comparison result;
the oscillator receives a reference signal output by the millimeter wave test system, and the reference signal is used as a reference source to generate a built-in local oscillation signal source;
the second high-frequency broadband switch is connected with the reference signal detection comparison circuit and the output end of the oscillator, receives an external local oscillator signal source, and automatically switches and selects the internal local oscillator signal source or the external local oscillator signal source as a local oscillator signal based on the comparison result.
More optionally, the BDC component further includes a circulator, a low-pass filter, a local oscillator fundamental filter, and a local oscillator filter; the circulator is connected between the first high-frequency broadband switch and the low-noise amplifier; the low-pass filter is connected to the output end of the frequency converter; the local oscillator fundamental wave filter is connected between the local oscillator signal generating unit and the multiplier; the local oscillation filter is connected between the multiplier and the frequency converter.
As described above, the on-chip multi-parameter measurement apparatus of the present invention has the following advantageous effects:
1. the on-chip multi-parameter measuring device is suitable for testing wafer-level electrical performance parameters up to 110 GHz.
2. The on-chip multi-parameter measuring device moves the tested calibration surface from the input and output ends of the instrument to the needle point of the probe to be used as a reference surface, so that the test error caused by testing a connecting cable and the like is reduced.
3. The on-chip multi-parameter measuring device adopts a switch switching method, and simultaneously completes linear parameter test and nonlinear parameter test on the same platform, thereby avoiding measurement test errors caused by changing test conditions and greatly improving the execution efficiency of test measurement.
4. The on-chip multi-parameter measuring device adopts a switch switching mode to ensure that the components of the BDC assembly are not damaged due to overlarge signals in the process of testing large signals.
5. The on-chip multi-parameter measuring device simultaneously supports normal temperature test and high and low temperature test, and can complete basic screening test work.
6. The on-chip multi-parameter measuring device simultaneously supports passive parameter testing and active parameter testing; the invention can also be applied to the electrical property parameter test of THz frequency band, and has high practicability.
Drawings
FIG. 1 is a schematic diagram of an on-chip multi-parameter measurement apparatus according to the present invention.
Fig. 2 is a schematic view of the BDC assembly of the present invention.
Description of the element reference numerals
11 millimeter wave test system
12 combiner
13 Probe station
14 BDC assembly
141 first high frequency broadband switch
142 low noise amplifier
143 local oscillation signal generating unit
143a reference signal detection comparator circuit
143b oscillator
143c second high frequency broadband switch
143d detector
143e power divider
144 multiplier
145 frequency converter
146 annular ring
147 local oscillator fundamental wave filter
148 local oscillator filter
149 low pass filter
15 calibration piece
16 power meter
17 power supply
Detailed Description
The embodiments of the present invention are described below with specific examples, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1-2. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
The invention aims to provide a technology for realizing on-chip multi-parameter measurement by single connection of HF to THz wave bands, which takes a millimeter wave test system as a core, and forms a multi-parameter test device together with other measurement test components by relying on a unique measurement test calibration system of the millimeter wave test system, so that the problem that the prior art and the measurement method are difficult to realize comprehensive measurement of a plurality of parameters in single measurement is solved, and meanwhile, errors can be avoided to ensure high-precision measurement.
As shown in fig. 1, the present invention provides an on-chip multi-parameter measuring apparatus 1, the on-chip multi-parameter measuring apparatus 1 including:
millimeter wave test system 11, combiner 12, probe station 13 and BDC module 14 (down conversion gating module).
As shown in fig. 1, the millimeter wave test system 11 is used for providing a test signal and processing a feedback signal.
Specifically, the millimeter wave test system 11 provides a test signal and a reference signal Ref (in this embodiment, the frequency of the reference signal Ref is set to 10MHz, and may be adjusted according to needs in actual use, which is not limited to this embodiment), and receives the fed-back Noise signal Noise and the test parameters. In this embodiment, the millimeter wave test system 11 employs a vector network analyzer, and the millimeter wave test system 11 performs scanning measurement in a wide frequency band to determine network parameters, and can directly measure complex scattering parameters of an active or passive, reversible or irreversible dual-port and single-port network, and provide amplitude and phase frequency characteristics of each scattering parameter in a frequency scanning manner. And the error correction can be performed on the measurement result point by point, and dozens of other network parameters, such as input reflection coefficient, output reflection coefficient, voltage standing wave ratio, impedance (or admittance), attenuation (or gain), phase shift, group delay and other transmission parameters, isolation, orientation and the like, can be calculated, which are not described herein again.
As shown in fig. 1, two input terminals of the combiner 12 are respectively connected to two test output terminals of the millimeter wave test system 11, and an output terminal is connected to an input terminal of the probe station 13, so as to apply test signals of at least two frequencies to the probe station 13.
Specifically, as shown in fig. 1, a first input end of the combiner 12 is connected to the first PORT1 of the millimeter wave test system 11, a second input end of the combiner 12 is connected to the third PORT3 of the millimeter wave test system 11, and the combiner 12 combines the test signals of multiple frequency bands input by the first PORT1 and the third PORT3 of the millimeter wave test system 11 and outputs the combined test signals to the probe station 13.
As shown in fig. 1, the probe station 13 receives the test signal input by the combiner 12, performs a test based on the test signal, and outputs test parameters to the rf input terminal of the BDC assembly 14.
Specifically, the probe station 13 includes a probe frame (for setting a probe, in this embodiment, the probe is a GSG probe), a probe moving platform, and a wafer testing platform, which are not described herein again, and any structure capable of implementing wafer testing is suitable for the present invention. As an example, the probe station 13 includes any one of a manual probe station, a semi-automatic probe station, a fully-automatic probe station or a probe station with a temperature control system, and the type of the probe station 13 may be set according to a test requirement.
As shown in fig. 1, an input end of the BDC component 14 is connected to an output end of the probe station 13, a radio frequency output end is connected to a test input end of the millimeter wave test system 11, and a noise output end is connected to a noise input end of the millimeter wave test system 11, and obtains a reference signal and a control signal from the millimeter wave test system 11 for switching signals to realize testing of different parameters.
Specifically, as shown in fig. 2, in the present embodiment, the BDC assembly 14 includes a first high frequency broadband switch 141, a low noise amplifier 142, a local oscillator signal generating unit 143, a multiplier 144, and a frequency converter 145.
More specifically, a first terminal of the first high-frequency broadband switch 141 is used as a radio frequency input terminal RF IN of the BDC assembly 14, a second terminal is used as a radio frequency output terminal RF OUT of the BDC assembly 14 and is connected to a fourth PORT4 of the millimeter wave test system 11 to transmit the test parameters of the probe station 13 to the millimeter wave test system 11, a third terminal is connected to an input terminal of the low noise amplifier 142, and the radio frequency input terminal RF IN of the BDC assembly 14 is connected to the radio frequency output terminal RF OUT or the input terminal of the low noise amplifier 142 based on a switching control signal TTL1 output by the millimeter wave test system 11. The TTL1 switches the RF input terminal RF IN of the BDC assembly 14 to the RF output terminal RF OUT or the input terminal of the low noise amplifier 142 according to the test requirement.
As another implementation manner of the present invention, a circulator 146 is further connected between the third terminal of the first high-frequency broadband switch 141 and the input terminal of the low-noise amplifier 142, and is used for unidirectionally transmitting high-frequency signal energy, self-isolating a radio-frequency signal at an output terminal or a load terminal, and improving port standing waves.
More specifically, the low noise amplifier 142 receives a signal output from the third terminal of the first high frequency broadband switch 141, amplifies the signal and outputs the amplified signal.
More specifically, the local oscillation signal generating unit 143 selects a built-in local oscillation signal source or an external local oscillation signal source as the local oscillation signal based on the reference signal Ref output by the millimeter wave testing system 11. The local oscillation signal generating unit 143 illustratively includes a reference signal detection comparing circuit 143a, an oscillator 143b, and a second high frequency broadband switch 143 c. The reference signal detection and comparison circuit 143a receives the reference signal Ref, compares the reference signal Ref with a reference signal Vref, and outputs a comparison result TTL 2. The oscillator 143b receives the reference signal Ref, and generates an internal local oscillation signal source LO _ INT using the reference signal Ref as a reference source. The second high-frequency broadband switch 143c is connected to the output ends of the reference signal detection comparing circuit 143a and the oscillator 143b, and receives an external local oscillation signal source LO _ EXT, and automatically switches and selects the internal local oscillation signal source LO _ INT or the external local oscillation signal source LO _ EXT as a local oscillation signal based on the comparison result TTL 2. As another example, the local oscillation signal generating unit 143 further includes a detector 143d, and the detector 143d inputs the reference signal Ref to the reference signal detection comparing circuit 143a after preliminary detection, so as to improve the detection accuracy; the local oscillator signal generating unit 143 further includes a power divider 143e, where the power divider 143 divides the energy of the reference signal Ref into two paths and provides the two paths of energy to the reference signal detection comparing circuit 143a and the oscillator 143b, respectively, so as to reduce mutual interference between the two paths; the detector 143d and the power divider 143e may be disposed as needed (not disposed, one of them or two of them are disposed), and are not limited to this embodiment.
More specifically, the multiplier 144 is connected to the output end of the local oscillator signal generating unit 143, and performs multiplication on the local oscillator signal.
As another implementation manner of the present invention, a local fundamental wave filter 147 is further connected between the local oscillator signal generating unit 143 and the multiplier 144, and the local fundamental wave filter 147 adopts a band pass filter, for example, to perform filtering processing on the output signal of the local oscillator signal generating unit 143.
More specifically, the frequency converter 145 is connected to the output terminals of the low noise amplifier 142 and the multiplier 144, mixes the output signals of the low noise amplifier 142 and the multiplier 144, and outputs a noise signal. The output of the low Noise amplifier 142 is used as an intermediate frequency signal, the output of the multiplier 144 is used as a local oscillation signal, the two signals are mixed to obtain a radio frequency signal which is used as a Noise signal Noise, and the Noise signal Noise is sent to the millimeter wave test system 11.
As another implementation manner of the present invention, a local oscillation filter 148 is further connected between the multiplier 144 and the frequency converter 145, and as an example, the local oscillation filter 148 adopts a band-pass filter to filter an output signal of the multiplier 144.
As another implementation manner of the present invention, the output end of the frequency converter 145 is further connected to a low-pass filter 149, and the low-pass filter 149 filters the output signal of the frequency converter 145 and outputs the filtered output signal to the BDC assembly 14.
The circulator 146, the local oscillator fundamental wave filter 147, the local oscillator filter 148, and the low pass filter 149 may be provided as needed, may be provided partially, may be provided entirely, or may not be provided, and are not limited to this embodiment.
As shown in fig. 1, as an implementation manner of the present invention, the on-chip multi-parameter measuring apparatus 1 further includes a calibration member 15. The calibration piece 15 is connected with the millimeter wave test system 11 before testing, so as to calibrate the index parameters of the millimeter wave test system 11. By way of example, the calibration feature 15 includes, but is not limited to, OPEN (OPEN), SHORT (SHORT), LOAD (LOAD), pass-through calibration feature.
As shown in fig. 1, as an implementation manner of the present invention, the on-chip multi-parameter measurement apparatus 1 further includes a power meter 16, where the power meter 16 is connected to the millimeter wave test system 11 before testing, so as to calibrate the output power of the millimeter wave test system 11.
As shown in fig. 1, the on-chip multi-parameter measurement apparatus 1 further comprises a power supply 17, and the power supply 17 supplies power to other devices in the on-chip multi-parameter measurement apparatus 1.
It should be noted that, the on-chip multi-parameter measuring device 1 can realize measurement tests of multiple parameters by a single measurement; the on-chip multi-parameter measuring device 1 is applied to the HF band to the THz band, and the frequency of the covered radio frequency signal is set to be more than 50 GHz. The on-chip multi-parameter measuring device 1 adopts a switch switching method, and simultaneously completes a linear parameter test and a nonlinear parameter test on the same platform, wherein the linear parameters include but are not limited to any one or more parameters of S parameters, gain, noise coefficients, harmonic suppression, phases and on-off isolation, and the nonlinear parameters include but are not limited to any one or more parameters of a third-order intermodulation point, P-1 and a saturation output level; the method avoids measurement testing errors caused by changing testing conditions, and greatly improves the execution efficiency of testing and measuring.
In summary, the present invention provides an on-chip multi-parameter measuring apparatus, comprising: the device comprises a millimeter wave test system, a combiner, a probe station and a BDC assembly; two input ends of the combiner are respectively connected with two test output ends of the millimeter wave test system, an output end of the combiner is connected with an input end of the probe station, and test signals of multiple frequency bands are applied to the probe station; the output end of the probe station is connected with the radio frequency input end of the BDC component; the radio frequency output end of the BDC component is connected with the test input end of the millimeter wave test system, the noise output end of the BDC component is connected with the noise input end of the millimeter wave test system, and a reference signal and a control signal are obtained from the millimeter wave test system; the BDC component realizes on-chip multi-parameter measurement through switch switching. The on-chip multi-parameter measuring device is suitable for testing wafer-level electrical performance parameters up to 110 GHz; moving the tested calibration surface from the input and output ends of the instrument to the needle point of the probe to be used as a reference surface, and reducing test errors caused by testing a connecting cable and the like; the execution efficiency of test measurement is improved by adopting a switch switching method, and the condition that the components of a BDC assembly are not damaged due to overlarge signals in the process of testing large signals is ensured; meanwhile, the normal temperature test and the high and low temperature test are supported, and the basic screening test work can be completed; meanwhile, passive parameter testing and active parameter testing are supported; the invention can also be applied to the electrical property parameter test of higher frequency band, and has high practicability. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-described embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes be accomplished by those skilled in the art without departing from the spirit and scope of the present disclosure, and be covered by the appended claims.
Claims (12)
1. An on-chip multi-parameter measurement apparatus, comprising at least:
the device comprises a millimeter wave test system, a combiner, a probe station and a BDC assembly;
two input ends of the combiner are respectively connected with two test output ends of the millimeter wave test system, an output end of the combiner is connected with an input end of the probe station, and test signals of multiple frequency bands are applied to the probe station;
the output end of the probe station is connected with the radio frequency input end of the BDC component;
the radio frequency output end of the BDC component is connected with the test input end of the millimeter wave test system, the noise output end of the BDC component is connected with the noise input end of the millimeter wave test system, and a reference signal and a control signal are obtained from the millimeter wave test system; the BDC component realizes on-chip multi-parameter measurement through switch switching.
2. The on-chip multi-parameter measurement device of claim 1, wherein: the on-chip multi-parameter measuring device further comprises a calibration piece, and the calibration piece is connected with the millimeter wave test system before testing so as to realize calibration of the millimeter wave test system.
3. The on-chip multi-parameter measurement device of claim 1, wherein: the on-chip multi-parameter measuring device further comprises a power meter, wherein the power meter is connected with the millimeter wave test system before testing so as to calibrate the output power of the millimeter wave test system.
4. The on-chip multi-parameter measurement device of claim 1, wherein: the on-chip multi-parameter measuring device comprises a linear parameter test and a nonlinear parameter test, wherein the linear parameter comprises at least one parameter of S parameter, gain, noise coefficient, harmonic suppression, phase and on-off isolation, and the nonlinear parameter comprises at least one parameter of a third-order intermodulation point and a saturation output level.
5. The on-chip multi-parameter measurement device of claim 1, wherein: the probe station comprises a manual probe station, a semi-automatic probe station or a full-automatic probe station.
6. The on-chip multi-parameter measurement device of claim 1, wherein: the probe station is provided with a temperature control system.
7. The on-chip multi-parameter measurement device of claim 1, wherein: the frequency of the reference signal is set to 10 MHz.
8. The on-chip multi-parameter measurement device of claim 1, wherein: the on-chip multi-parameter measurement device is applied to the HF band to the THz band.
9. The sheet multiparameter measurement device according to claim 1, wherein: the frequency of the radio frequency signal covered by the sheet multi-parameter measuring device is set to be more than 50 GHz.
10. The on-chip multi-parameter measurement device according to any one of claims 1 to 9, wherein: the BDC component comprises a first high-frequency broadband switch, a low-noise amplifier, a local oscillation signal generating unit, a multiplier and a frequency converter;
the first end of the first high-frequency broadband switch is used as the radio-frequency input end of the BDC component, the second end of the first high-frequency broadband switch is used as the radio-frequency output end of the BDC component, the third end of the first high-frequency broadband switch is connected with the input end of the low-noise amplifier, and the radio-frequency input end of the BDC component is connected to the radio-frequency output end or the input end of the low-noise amplifier based on a switching control signal output by the millimeter wave test system;
the low-noise amplifier receives and amplifies the output signal of the first high-frequency broadband switch;
the local oscillator signal generating unit selects a built-in local oscillator signal source or an external local oscillator signal source as a local oscillator signal based on the reference signal output by the millimeter wave test system;
the multiplier is connected with the output end of the local oscillation signal generating unit and is used for multiplying the local oscillation signal;
the frequency converter is connected with the output ends of the low noise amplifier and the multiplier, mixes the output signals of the low noise amplifier and the multiplier and outputs a noise signal.
11. The on-chip multi-parameter measurement device of claim 10, wherein: the local oscillation signal generating unit comprises a reference signal detection comparison circuit, an oscillator and a second high-frequency broadband switch;
the reference signal detection comparison circuit receives a reference signal output by the millimeter wave test system, compares the reference signal with a reference signal and outputs a comparison result;
the oscillator receives a reference signal output by the millimeter wave test system, and the reference signal is used as a reference source to generate a built-in local oscillation signal source;
the second high-frequency broadband switch is connected with the reference signal detection comparison circuit and the output end of the oscillator, receives an external local oscillator signal source, and automatically switches and selects the internal local oscillator signal source or the external local oscillator signal source as a local oscillator signal based on the comparison result.
12. The on-chip multi-parameter measurement device of claim 10, wherein: the BDC component also comprises a circulator, a low-pass filter, a local oscillator fundamental wave filter and a local oscillator filter; the circulator is connected between the first high-frequency broadband switch and the low-noise amplifier; the low-pass filter is connected to the output end of the frequency converter; the local oscillator fundamental wave filter is connected between the local oscillator signal generating unit and the multiplier; the local oscillation filter is connected between the multiplier and the frequency converter.
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