CN112527695A - SLC/MLC hybrid memory page conversion method based on benefit perception - Google Patents

SLC/MLC hybrid memory page conversion method based on benefit perception Download PDF

Info

Publication number
CN112527695A
CN112527695A CN202011491474.2A CN202011491474A CN112527695A CN 112527695 A CN112527695 A CN 112527695A CN 202011491474 A CN202011491474 A CN 202011491474A CN 112527695 A CN112527695 A CN 112527695A
Authority
CN
China
Prior art keywords
page
slc
mlc
missing
conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202011491474.2A
Other languages
Chinese (zh)
Other versions
CN112527695B (en
Inventor
熊安萍
胡明江
曹宸乾
龙林波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chongqing University of Post and Telecommunications
Original Assignee
Chongqing University of Post and Telecommunications
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chongqing University of Post and Telecommunications filed Critical Chongqing University of Post and Telecommunications
Priority to CN202011491474.2A priority Critical patent/CN112527695B/en
Publication of CN112527695A publication Critical patent/CN112527695A/en
Application granted granted Critical
Publication of CN112527695B publication Critical patent/CN112527695B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7201—Logical to physical mapping or translation of blocks or pages

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

The invention belongs to the technical field of computer storage, and particularly relates to a page conversion method of an SLC/MLC (single-level cell/multi-level cell) hybrid memory based on benefit perception, which comprises the steps of periodically recording the page missing times of an SLC/MLC hybrid memory system to obtain the page missing ratio of the system, and constructing a page conversion benefit model by combining SLC/MLC read-write time delay and the average read-write times of an SLC page; calculating the benefits of various page conversion modes in the current period based on a page conversion benefit model, and selecting a page conversion mode with positive benefit, wherein the page conversion mode comprises that an SLC page is converted into an MLC page and the MLC page is converted into an SLC page; according to the page conversion mode, combining the periodic historical page missing data sequence and the page missing ratio, calculating the SLC/MLC page conversion number, and selecting a corresponding page to complete conversion; the invention can obtain the high-efficiency read-write performance of the SLC storage unit and the high storage density characteristic of the MLC storage unit, so that the hybrid system keeps balance between the storage density and the read-write performance.

Description

SLC/MLC hybrid memory page conversion method based on benefit perception
Technical Field
The invention belongs to the technical field of computer storage, and particularly relates to a page conversion method of an SLC/MLC hybrid memory based on benefit perception.
Background
As important intelligent equipment of an application service of the internet of things, standard setting and product types of mobile intelligent terminals have rapid development with continuous maturity of intelligent terminal technology, and the application of mobile intelligent terminal equipment is concerned more and more, but at the same time, contradictions between performance requirements and storage density brought to the mobile intelligent terminals bring challenges to traditional Dynamic Random Access Memories (DRAMs), and the contradictions are one of key factors for restricting the intelligent terminal equipment due to the defects of the mobile intelligent terminals in the aspects of energy consumption, expansibility and reliability.
Therefore, a nonvolatile memory (NVM), which is a new type of random access flash memory, has been developed rapidly in recent years, has a high storage density, and can have a storage capacity of several tens to several hundreds GB as the same size as the DRAM. And because of the non-volatility of the NVM, continuous refreshing operation is not needed, the standby static energy consumption of the NVM can be almost ignored, and the NVM has the advantages of memory-level read-write time delay, persistent storage, strong expansibility and the like, and meanwhile, the existing nonvolatile memory with the dynamically variable storage mode is generated, so that the existing memory system can be dynamically variable in the aspect of memory density, and the advantages are expected to replace the traditional memory.
The advent of new non-volatile memories has received widespread attention in both academia and industry, and has provided new solutions to computer storage technology. Due to the characteristics of the novel memory, the existing traditional management method of the storage system is not applicable, and a corresponding optimization management method needs to be carried out according to the characteristics of the novel NVM, so that the characteristics brought by the nonvolatile memory with the dynamically variable storage mode can be better utilized, and the performance of the embedded equipment of the Internet of things is improved.
Disclosure of Invention
In order to enable a hybrid memory system to obtain high-efficiency read-write performance of a Single Level Cell (SLC) and obtain high storage density characteristics of a Multi-Level Cell (MLC), so that the hybrid memory system keeps balance between memory density and read-write performance, the invention provides a page conversion method of an SLC/MLC hybrid memory based on benefit perception, which specifically comprises the following steps:
s1: periodically recording the page missing times of the SLC/MLC hybrid memory system to obtain the page missing ratio of the system, and constructing a page conversion benefit model by combining the SLC/MLC read-write time delay and the average SLC page read-write times;
s2: calculating the benefits of various page conversion modes in the current period based on a page conversion benefit model, and selecting a page conversion mode with positive benefit, wherein the page conversion mode comprises that an SLC page is converted into an MLC page and the MLC page is converted into an SLC page;
s3: and calculating the SLC/MLC page conversion number according to the page conversion mode by combining the cycle historical page missing data sequence and the page missing ratio, and selecting the corresponding page to complete conversion.
Further, the constructing of the page transformation benefit model specifically includes the following steps:
s11: periodical statistics of missing page times PF of hybrid SLC/MLC memory systemnSLC page write times CWSLCAnd SLC page read count CRSLC；
S12: according to the missing page times of the current period and the total page number PT of the SLC/MLC hybrid memory system of the current periodnCalculating the page missing ratio R of the current periodn；
S13: according to SLC page writing times CW of the current periodSLCSLC page read count CRSLCAnd the total number of SLC active pages PT of the current cycleSLCCalculating the average read-write times ACW of each SLC pageSLC、ACRSLC；
S14: calculating Cost of missing page errorPFMLC page data copy to SLC page overhead CostCPAnd establishing an SLC/MLC page conversion benefit model.
Further, the page fault ratio R of the current periodnIs shown as
Figure BDA0002840792570000021
Further, the average read times ACW of each SLC pageSLCIs shown as
Figure BDA0002840792570000022
Average write times ACR per SLC pageSLCExpressed as:
Figure BDA0002840792570000023
further, the step S14 of establishing the SLC/MLC page transition benefit model includes:
the expense for converting MLC into SLC is calculated according to the missing page ratio, SLC and MLC writing time delay, and 2N is reducedMLCIncreased missing page delay Cost of MLC pagePFRepresents CostPF＝Rn×TWMLC×2NMLC；
Copying MLC page data to SLC page delay overhead CostCPThe sum of (d) is expressed as: costCP＝NMLC×TWSLC；
According to SLC page read delay TRSLCSLC page write delay TWSLCMLC page read latency TRMLCMLC page write latency TWMLCAverage number of reads ACR of SLC pageSLCSLC page average write times ACWSLCIn combination with CostPF、CostCPA benefit model is obtained, expressed as:
Wtotal＝ACWSLC×(TWMLC-TWSLC)×NSLC
+ACRSLC×(TRMLC-TRSLC)×NSLC-CostCP-CostPF
wherein, WtotalIndicating the benefit of the conversion of MLC pages to SLC pages in the current cycle, NSLCRepresents by 2NMLCN converted from MLC pageSLCA number of SLC pages.
Further, the SLC page is converted to an MLC page comprising:
s4: selecting an idle SLC page in the idle SLC page queue and converting the idle SLC page into an MLC page;
s5: if the idle SLC page queue is empty, selecting the page at the tail of the active SLC linked list for elimination and converting the page into an MLC page;
s6: and inserting the converted idle MLC page into the tail of the idle MLC page queue.
Further, the converting the MLC page to the SLC page includes:
s7: respectively selecting a page at the head of the idle MLC page queue and an active MLC page linked list, and merging and converting the page into an SLC page;
s8: if the MLC idle queue is empty, selecting a page at the tail of the active MLC page linked list for elimination, and converting the page into an SLC page;
s9: and inserting the converted active SLC page into the head of the linked list of the active SLC pages.
Further, the calculation of the number of SLC/MLC page transitions includes:
Rn+1×NMLC≥ΔPF；
wherein, Δ PF represents the difference of the page missing times of the previous period and the current period, Rn+1The page missing ratio of the current period is expressed, and the minimum value N meeting the inequality needs to be calculatedMLCI.e. the minimum number of page transitions in the current cycle.
The invention combines the characteristics of the novel variable nonvolatile memory to realize the dynamic selection and conversion of the SLC or MLC page according to the SLC/MLC page conversion benefit model and select the corresponding page for conversion, so that the hybrid memory system can obtain the high-efficiency read-write performance of the SLC memory unit and the high storage density characteristic of the MLC memory unit, and the hybrid memory system keeps balance between the memory density and the read-write performance.
Drawings
FIG. 1 is a flowchart illustrating an overall page conversion method according to an embodiment of the present invention;
FIG. 2 is a diagram of a hybrid memory system architecture according to an embodiment of the present invention;
FIG. 3 is a flow chart of SLC to MLC page and MLC page to SLC page conversion in the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a page conversion method of an SLC/MLC hybrid memory based on benefit perception, which specifically comprises the following steps as shown in figure 1:
s1: periodically recording the page missing times of the SLC/MLC hybrid memory system to obtain the page missing ratio of the system, and constructing a page conversion benefit model by combining the SLC/MLC read-write time delay and the average SLC page read-write times;
s2: calculating the benefits of various page conversion modes in the current period based on a page conversion benefit model, and selecting a page conversion mode with positive benefit, wherein the page conversion mode comprises that an SLC page is converted into an MLC page and the MLC page is converted into an SLC page;
s3: and calculating the SLC/MLC page conversion number according to the page conversion mode by combining the cycle historical page missing data sequence and the page missing ratio, and selecting the corresponding page to complete conversion.
The invention is based on the mutual conversion of NVM SLC/MLC storage modes and the complementary advantages of the read-write performance and the storage capacity of the two storage units, thereby realizing a dynamic variable SLC/MLC hybrid memory system.
In order to make the hybrid memory system dynamically changeable, all the memory cells of the initially tested memory system are set as SLC memory cells in this embodiment; along with the operation of the SLC/MLC hybrid memory system, the SLC memory cell page can be converted into the MLC memory cell page according to benefit perception, and the MLC memory cell page can also be converted into the SLC memory cell page; in the embodiment, the complementary advantages and benefit perception of the read-write performance and the storage capacity of two SLC/MLC storage units in the NVM are combined, so that the page conversion method of the SLC/MLC hybrid memory system based on the benefit perception is realized.
In order to calculate the delay overhead caused by benefit perception, it is necessary to calculate the influence of page missing delay which can be averagely caused by each page, and thus it is necessary to calculate the number of page missing times caused averagely by each page, which is referred to as a page missing ratio, specifically, it can be expressed as
Figure BDA0002840792570000051
Wherein R isnIndicating the page fault ratio, PF, of the current cycle of the hybrid memory systemnNumber of System pages missing, PT, representing Current cyclenRepresenting the total number of system SLC/MLC pages for the current cycle.
In order to judge the page conversion mode, the missing page times and the total write times of the SLC page of the SLC/MLC hybrid memory system need to be periodically counted, then an SLC/MLC page conversion benefit model is constructed by combining SLC/MLC read-write delay difference, and concretely, the time delay Cost caused by the missing page abnormity brought by the fact that the MLC page is converted into the SLC page is adopted according to the Cost in the benefit model constructed by benefit perception, SLC/MLC read-write delay and the SLC page average read-write timesPF＝Rn×TWMLC×2NMLCAnd time delay overhead Cost of data replicationCP＝NMLC×TWSLCThe two parts are combined; the gain is obtained by subtracting the total conversion overhead from the improvement of the read-write delay brought by converting the MLC page into the SLC page, namely the formula is as follows:
Wtotal＝ACWSLC×(TWMLC-TWSLC)×NSLC
+ACRSLC×(TRMLC-TRSLC)×NSLC-CostCP-CoStPF
when W istotalWhen the number of the pages is more than 0, the benefit of converting the MLC page of the hybrid memory system into the SLC page in the current period is positive, the MLC page can be converted into the SLC page, page missing delay cost can be brought although the memory density is reduced, and the read-write delay improvement benefit brought by the converted SLC page is larger.
When W istotalWhen the number of the pages is less than or equal to 0, the gain of converting the MLC page of the hybrid memory system into the SLC page in the current period is negative, if the MLC page is insist on being converted into the SLC page, the improvement gain on the read-write performance brought by the converted SLC page is insufficient, and the brought result is that the missing page delay cost is overlarge, so that the operation of the hybrid memory system is unstable, the SLC page is required to be selected to be converted into the MLC page at the moment, and the hybrid memory system is improvedAnd the density of the memory system is combined, the time delay expense caused by page missing is reduced, and the stability of the hybrid memory system is improved.
It can be clearly seen that, in the SLC/MLC page transition benefit model, the benefit model is independent of the number of pages to be transitioned, so we need to calculate the minimum number of pages to be transitioned in the current period, specifically, the page transition number in the current period is calculated according to the missing page ratio in the current period and the missing page number difference in the previous period, which can be expressed as:
Rn+1×NMLC≥ΔPF；
ΔPF＝PFn+1-PFn；
wherein, Δ PF represents the difference of the page missing times of the previous period and the current period, Rn+1The page missing ratio of the current period is expressed, and the minimum value N meeting the inequality needs to be calculatedMLCI.e. the minimum number of page transitions in the current cycle.
As shown in the architecture diagram of the hybrid memory system provided in fig. 2, the storage medium in the present invention includes a non-volatile single-layer cell SLC memory and a non-volatile multi-layer cell MLC memory, and a Central Processing Unit (CPU) is connected to the SLC/MLC hybrid memory through a Cache; meanwhile, in the memory architecture mode, the nonvolatile SLC/MLC memory cell can be dynamically switched.
Fig. 3 shows a flow chart of the SLC cell page conversion to MLC page in the hybrid memory system of the present invention. Specifically, when the determined page transition mode is the SLC page transition to the MLC page according to the constructed page transition benefit model, the specific steps are shown in fig. 3:
s4: selecting an idle SLC page in the idle SLC page queue and converting the idle SLC page into an MLC page;
s5: if the idle SLC page queue is empty, selecting the page at the tail of the active SLC linked list for elimination and converting the page into an MLC page;
s6: inserting the converted idle MLC page into the tail of an idle MLC page queue;
in summary, in the process of converting an SLC page into an MLC page, it is necessary to expand the memory density of the current hybrid memory system, reduce the influence caused by missing pages, and improve the stability of system operation.
When the judged page conversion mode is that the MLC page is converted into the SLC page according to the constructed page conversion benefit model, the specific steps are shown in fig. 3:
s7: respectively selecting a page at the head of the idle MLC page queue and an active MLC page linked list, and merging and converting the page into an SLC page;
s8: if the MLC idle queue is empty, selecting a page at the tail of the active MLC page linked list for elimination, and converting the page into an SLC page;
s9: inserting the converted active SLC page into the head of the linked list of the active SLC pages;
in summary, in the process of converting an MLC page into an SLC page, N idle MLC pages and N MLC pages with frequent write need to be selected to be converted into N SLC pages, and inserted into the head of an active SLC linked list, so as to improve the read-write access performance of the active page.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (8)

1. A page transition method of SLC/MLC hybrid memory based on benefit perception is characterized in that the method comprises the following steps:
s1: periodically recording the page missing times of the SLC/MLC hybrid memory system to obtain the page missing ratio of the system, and constructing a page conversion benefit model by combining the SLC/MLC read-write time delay and the average SLC page read-write times;
s2: calculating the benefits of various page conversion modes in the current period based on a page conversion benefit model, and selecting a page conversion mode with positive benefit, wherein the page conversion mode comprises that an SLC page is converted into an MLC page and the MLC page is converted into an SLC page;
s3: and calculating the SLC/MLC page conversion number according to the page conversion mode by combining the cycle historical page missing data sequence and the page missing ratio, and selecting the corresponding page to complete conversion.
2. The method of claim 1, wherein constructing the page transition benefit model specifically comprises the following steps:
s11: periodical statistics of missing page times PF of hybrid SLC/MLC memory systemnSLC page write times CWSLCAnd SLC page read count CRSLC；
S12: according to the missing page times of the current period and the total page number PT of the SLC/MLC hybrid memory system of the current periodnCalculating the page missing ratio R of the current periodn；
S13: according to SLC page writing times CW of the current periodSLCSLC page read count CRSLCAnd the total number of SLC active pages PT of the current cycleSLCCalculating the average read-write times ACW of each SLC pageSLC、ACRSLC；
S14: calculating Cost of missing page errorPFMLC page data copy to SLC page overhead CostCPAnd establishing an SLC/MLC page conversion benefit model.
3. The method as claimed in claim 2, wherein the page-missing ratio R of the current cycle is the SLC/MLC hybrid memorynIs shown as
Figure FDA0002840792560000011
4. The method as claimed in claim 2, wherein the average number of reads ACW per SLC page is ACWSLCIs shown as
Figure FDA0002840792560000021
Average write times ACR per SLC pageSLCExpressed as:
Figure FDA0002840792560000022
5. the method as claimed in claim 2, wherein the step S14 of establishing the SLC/MLC page transition benefit model includes:
the expense for converting MLC into SLC is calculated according to the missing page ratio, SLC and MLC writing time delay, and 2N is reducedMLCIncreased missing page delay Cost of MLC pagePFRepresents CostPF＝Rn×TWMLC×2NMLC；
Copying MLC page data to SLC page delay overhead CostCPThe sum of (d) is expressed as: costCP＝NMLC×TWSLC；
According to SLC page read delay TRSLCSLC page write delay TWSLCMLC page read latency TRMLCMLC page write latency TWMLCAverage number of reads ACR of SLC pageSLCSLC page average write times ACWSLCIn combination with CostPF、CostCPA benefit model is obtained, expressed as:
Wtotal＝ACWSLC×(TWMLC-TWSLC)×NSLC+ACRSLC×(TRMLC-TRSLC)×NSLC-CostCP-CostPF
wherein, WtotalIndicating the benefit of the conversion of MLC pages to SLC pages in the current cycle, NSLCRepresents by 2NMLCN converted from MLC pageSLCA number of SLC pages.
6. The SLC/MLC hybrid memory page transition method according to claim 1, wherein the SLC page transition to MLC page comprises:
s4: selecting an idle SLC page in the idle SLC page queue and converting the idle SLC page into an MLC page;
s5: if the idle SLC page queue is empty, selecting the page at the tail of the active SLC linked list for elimination and converting the page into an MLC page;
s6: and inserting the converted idle MLC page into the tail of the idle MLC page queue.
7. The method of claim 1, wherein the converting the MLC page to the SLC page comprises:
s7: respectively selecting a page at the head of the idle MLC page queue and an active MLC page linked list, and merging and converting the page into an SLC page;
s8: if the MLC idle queue is empty, selecting a page at the tail of the active MLC page linked list for elimination, and converting the page into an SLC page;
s9: and inserting the converted active SLC page into the head of the linked list of the active SLC pages.
8. The SLC/MLC hybrid memory page transition method according to claim 1, wherein the calculation of SLC/MLC page transition number comprises:
Rn+1×NMLC≥ΔPF；
wherein, Δ PF represents the difference of the page missing times of the previous period and the current period, Rn+1The page missing ratio of the current period is expressed, and the minimum value N meeting the inequality needs to be calculatedMLCI.e. the minimum number of page transitions in the current cycle.
CN202011491474.2A 2020-12-17 2020-12-17 SLC/MLC hybrid memory page conversion method based on benefit perception Active CN112527695B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011491474.2A CN112527695B (en) 2020-12-17 2020-12-17 SLC/MLC hybrid memory page conversion method based on benefit perception

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011491474.2A CN112527695B (en) 2020-12-17 2020-12-17 SLC/MLC hybrid memory page conversion method based on benefit perception

Publications (2)

Publication Number Publication Date
CN112527695A true CN112527695A (en) 2021-03-19
CN112527695B CN112527695B (en) 2022-10-11

Family

ID=75001138

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011491474.2A Active CN112527695B (en) 2020-12-17 2020-12-17 SLC/MLC hybrid memory page conversion method based on benefit perception

Country Status (1)

Country Link
CN (1) CN112527695B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150179269A1 (en) * 2013-12-25 2015-06-25 Aplus Flash Technology, Inc. HYBRID NAND WITH ALL-BL m-PAGE OPERATION SCHEME
CN105117175A (en) * 2015-08-18 2015-12-02 重庆大学 Variable resistance-type storage wear-leveling method based on software compiling layer
CN105843748A (en) * 2015-01-15 2016-08-10 华为技术有限公司 Method and device for processing memory page in memory
CN107193646A (en) * 2017-05-24 2017-09-22 中国人民解放军理工大学 A kind of high-efficiency dynamic paging method that framework is hosted based on mixing
CN109002257A (en) * 2018-06-25 2018-12-14 重庆邮电大学 A kind of data distribution optimization method based on variable scrachpad storage
CN111258923A (en) * 2020-01-16 2020-06-09 重庆邮电大学 Page allocation method based on heterogeneous hybrid memory system

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150179269A1 (en) * 2013-12-25 2015-06-25 Aplus Flash Technology, Inc. HYBRID NAND WITH ALL-BL m-PAGE OPERATION SCHEME
CN105843748A (en) * 2015-01-15 2016-08-10 华为技术有限公司 Method and device for processing memory page in memory
CN105117175A (en) * 2015-08-18 2015-12-02 重庆大学 Variable resistance-type storage wear-leveling method based on software compiling layer
CN107193646A (en) * 2017-05-24 2017-09-22 中国人民解放军理工大学 A kind of high-efficiency dynamic paging method that framework is hosted based on mixing
CN109002257A (en) * 2018-06-25 2018-12-14 重庆邮电大学 A kind of data distribution optimization method based on variable scrachpad storage
CN111258923A (en) * 2020-01-16 2020-06-09 重庆邮电大学 Page allocation method based on heterogeneous hybrid memory system

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
DUOLIU,LINBOLONG: ""A workload-aware flash translation layer enhancing performance and lifespan of TLC/SLC dual-mode flash memory in embedded systems"", 《MICROPROCESSORS AND MICROSYSTEMS》 *
冒伟等: "基于相变存储器的存储技术研究综述", 《计算机学报》 *
胡明江: ""移动终端中可变电阻式内存页面能耗与耐久性优化"", 《中国优秀博硕士学位论文全文数据库(硕士)信息科技辑》 *

Also Published As

Publication number Publication date
CN112527695B (en) 2022-10-11

Similar Documents

Publication Publication Date Title
US9275696B2 (en) Energy conservation in a multicore chip
CN106293521A (en) A kind of mapping granule adaptive flash translation layer (FTL) management method
US8185754B2 (en) Time-based storage access and method of power savings and improved utilization thereof
CN111400204B (en) Solid-state disk caching method, system and related equipment
CN202472635U (en) Flash memory wear leveling device
CN105138282A (en) Storage space recycling method and storage system
CN107748722A (en) The self-adapting data method for refreshing of data continuation in a kind of guarantee solid state hard disc
CN113724775A (en) Meta information management method, solid state disk controller and solid state disk
CN112527695B (en) SLC/MLC hybrid memory page conversion method based on benefit perception
KR101281685B1 (en) Method for writing and reading data of phase-change random access memory and apparatus thereof
CN112068772B (en) Data storage method, data storage device and storage device
CN109656482B (en) Write hot page prediction method based on memory access
CN109828722B (en) Self-adaptive distribution method for Raft group data of heterogeneous distributed key value storage system
US10304501B1 (en) Implementing DRAM refresh power optimization during long idle mode
CN110956995A (en) Dynamic data scrubbing method for STT-RAM cache
TW201435586A (en) Flash memory apparatus, and method and device for managing data thereof
CN115129244B (en) FLASH chip-based battery management system data storage management method
CN105302736A (en) Method improving log block data tidying performance in mixed map
CN114936169A (en) Wear leveling method and device for memory, memory and electronic equipment
CN111273865B (en) Task allocation and scheduling method based on variable scratch pad memory
CN113076062A (en) Method and equipment for prolonging service life of QLCSSD
US8626999B2 (en) Dynamic random access memory unit and data refreshing method thereof
CN102541456B (en) Flash memory write-in method under a kind of sector mode and system
WO2024031734A1 (en) Data writing method, storage device, and computer readable storage device
CN110134342A (en) Data approximation method and system, storage method and system, read method and system

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant