CN112526784A - Light emitting diode device, backlight module and display equipment comprising same - Google Patents

Light emitting diode device, backlight module and display equipment comprising same Download PDF

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Publication number
CN112526784A
CN112526784A CN201910886568.0A CN201910886568A CN112526784A CN 112526784 A CN112526784 A CN 112526784A CN 201910886568 A CN201910886568 A CN 201910886568A CN 112526784 A CN112526784 A CN 112526784A
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China
Prior art keywords
light
emitting diode
lens
light emitting
absorbing material
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CN201910886568.0A
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Chinese (zh)
Inventor
李崇华
陈建清
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Suzhou Duolis Technology Co ltd
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Individual
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Priority to CN201910886568.0A priority Critical patent/CN112526784A/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133606—Direct backlight including a specially adapted diffusing, scattering or light controlling members
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133609—Direct backlight including means for improving the color mixing, e.g. white

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention provides a light emitting diode device, comprising: a diffusion lens having a lens body, a lens cavity and a light-emitting surface; a light emitting diode disposed in the lens cavity; and a light absorption material arranged on the light path from the light emitted by the light emitting diode to the light emergent surface through the lens body, wherein the light absorption material is a yellow light absorption material. In addition, the application also provides a backlight module and display equipment using the light-emitting diode device.

Description

Light emitting diode device, backlight module and display equipment comprising same
Technical Field
The present disclosure relates to a light emitting diode device, and a backlight module and a display apparatus including the same, and more particularly, to a light emitting diode device capable of increasing a color gamut, and a backlight module and a display apparatus including the same.
Background
The white light emitting diode has a wide application range, for example, it can be applied to a light source or a backlight module of a display device. The material of the light emitting layer of the known white light emitting diode can be phosphor or quantum dots. However, the light emitted from the phosphor has more stray light than the light emitted from the quantum dots, and thus the color gamut of the white light emitting diode manufactured by using the phosphor is less desirable. Therefore, manufacturers want to use quantum dots as materials of the light emitting layer to prepare white light emitting diodes, so as to improve the backlight effect of the backlight module applied to the display device.
However, the manufacturing cost of the quantum dots is expensive, and if the parasitic light emitted by the phosphor can be effectively filtered and the color gamut of the white light emitting diode can be improved, the backlight effect of the backlight module of the display device can be effectively improved even if the quantum dots are not used as the light emitting layer material of the white light emitting diode.
In view of the above, there is a need to develop a novel white light emitting diode using phosphor, so as to be effectively applied to a backlight module of a display device.
Disclosure of Invention
The present application provides a light emitting diode device, which can improve the color gamut of the light emitting diode device by using a yellow light absorbing material.
The light emitting diode device of the present application includes: a diffusion lens having a lens body, a lens cavity and a light-emitting surface; a light emitting diode disposed in the lens cavity; and a light absorption material arranged on the light path from the light emitted by the light emitting diode to the light emergent surface through the lens body, wherein the light absorption material is a yellow light absorption material.
In the light emitting diode device of the present application, by using a yellow light absorbing material, the parasitic light in the yellow light wavelength range can be absorbed, and the parasitic light intensity in the yellow light wavelength range is reduced, so as to improve the color gamut of the light emitting diode device. Therefore, when the light emitting diode device is applied to the backlight module of the display equipment, the backlight with wide color gamut can be provided, and the display quality of the display equipment is improved.
In the led device of the present application, the led may be a white led.
In the led device of the present application, the yellow light absorbing material can be a material that absorbs light with a wavelength between 550nm and 610 nm. The yellow light absorbing material is not particularly limited as long as the yellow light absorbing material absorbs light in the above wavelength range. The yellow light absorbing material may be an organic dye or an inorganic pigment, specific examples of which include, but are not limited to, triphenylmethane, cobalt blue, cobalt violet, or mixtures thereof.
In the led device of the present application, the lens body of the diffusion lens may include a lens material. The lens material is not particularly limited as long as it has a high transmittance. For example, the lens material may include, but is not limited to, Polyvinyl Chloride (PVC), Polycarbonate (PC), polymethyl methacrylate (PMMA), or a mixture thereof.
In one embodiment of the present disclosure, the lens body may include a lens material and a light absorbing material. In other words, the lens body is formed of a mixture of a lens material and a light absorbing material. Therefore, when the light emitted by the light emitting diode passes through the lens body to the light emergent surface, the light absorbing material included in the lens body can absorb the stray light in the yellow wavelength range. The lens material is as described above and will not be described in detail.
In another embodiment of the present disclosure, the light absorbing material may be disposed on the light emitting surface of the lens body. In other words, the light absorbing material can be formed on the light emitting surface of the lens body in the form of a thin film. Therefore, when the light emitted by the light emitting diode passes through the lens body to the light emergent surface, the stray light in the yellow wavelength range in the light reaching the light emergent surface can be absorbed by the light absorbing material.
In yet another embodiment of the present application, the light absorbing material can be disposed on a surface of the lens cavity. In other words, the light absorbing material may be formed as a thin film on the surface of the lens cavity. Here, the surface of the lens cavity is the light incident surface of the lens body. Therefore, when light emitted by the light emitting diode enters the lens body, stray light in a yellow wavelength range in the light reaching the light incident surface can pass through the lens body to the light emitting surface after being absorbed by the light absorbing material.
In addition, the present application also provides a backlight module, including: a reflector plate; an optical film arranged on the reflector plate; and the light-emitting diode device is arranged between the reflecting sheet and the optical film. Furthermore, the present application also provides a display device, including: the backlight module as described above; and a display panel arranged on the backlight module.
In the present application, the backlight module may be a direct-type backlight module.
In the present application, the display panel may be a display panel requiring a backlight, such as a liquid crystal display panel.
In the backlight module and the display device of the present application, the color gamut of the backlight module can be improved by using the light emitting diode device. Therefore, even if the light emitting diode device of the present application uses the phosphor layer as the light emitting layer, a backlight effect similar to that of using the quantum dots as the light emitting layer can be achieved.
Drawings
Fig. 1A to fig. 1C are schematic cross-sectional views illustrating a manufacturing process of a light emitting diode according to embodiment 1 of the present application;
fig. 2 is a schematic cross-sectional view of a light emitting diode device according to embodiment 1 of the present application;
fig. 3 is a schematic cross-sectional view of a light emitting diode device according to embodiment 2 of the present application;
fig. 4 is a schematic cross-sectional view of a light emitting diode device according to embodiment 3 of the present application;
fig. 5 is a schematic cross-sectional view of a direct type backlight module according to embodiment 4 of the present application;
fig. 6 is a schematic cross-sectional view of a display device according to embodiment 5 of the present application;
fig. 7A and 7B are graphs showing test results of comparative examples and experimental examples in the test examples of the present application, respectively.
Detailed Description
The embodiments of the present application are described below with reference to the drawings to clearly explain the foregoing and other technical matters, features, and/or efficacies of the present application. The technical means and effects adopted by the present application can be further clarified by the description of the specific embodiments by those skilled in the art to achieve the aforementioned purpose of the present application. Moreover, the techniques claimed herein may be understood and implemented by those skilled in the art, and any substantially similar alterations or modifications may be effected without departing from the concept of the present application and are intended to be covered by the claims.
Furthermore, ordinal numbers such as "first," "second," etc., mentioned in the specification and claims are only used to describe the claimed elements; and is not intended to imply, nor is the order in which a claimed element performs any or all of the steps of a process or method between a claimed element and another claimed element. The use of ordinals is merely used to clearly distinguish one requesting component having a certain name from another requesting component having the same name.
In addition, where the specification and claims refer to a location, such as "on," "above," or "over," they may refer to directly contacting another element, or may refer to not directly contacting another element. Furthermore, where the specification and claims refer to a location, such as "under", "beneath", or "beneath", that may or may not directly contact another element.
Furthermore, the technical features of different embodiments of the present application can be combined with each other to form another embodiment.
Example 1
Fig. 1A to fig. 1C are schematic cross-sectional views illustrating a manufacturing process of the white light emitting diode of the present embodiment.
As shown in fig. 1A, first, a light emitting diode chip 11 is provided, which has a first surface 111 and a second surface 112, wherein the first surface 111 is opposite to the second surface 112; and two electrodes 12 (an anode and a cathode, respectively) are disposed on the first surface 111 of the led chip 11. In addition, the led chip 11 further includes a side surface 113 connected to the first surface 111 and the second surface 112. The LED chip may be a blue light epitaxial chip with an epitaxial layer, a face-up LED chip, a vertical LED chip, or a flip-chip LED chip. In the present embodiment, the led chip 11 is a blue flip chip; more specifically, the led chip 11 is a blue flip chip with an epitaxial layer formed thereon.
As shown in fig. 1B, a phosphor layer 13 is formed on the second surface 112 and the side surface 113 of the led chip 11.
Wherein the phosphor layer is a layer formed by a plurality of phosphor particles. The type of the phosphor layer is not particularly limited, and may be selected according to the type of the led chip or the color light to be emitted by the phosphor. For example, phosphor particles that emit yellow light when excited can be used; when the LED chip is combined with a blue LED chip for use, the LED can emit white light.
As shown in fig. 1C, a protection layer 14 is formed on the phosphor layer 13. In the present embodiment, the protection layer 14 can be an optical protection adhesive. Further, the method of forming the protective layer 14 is not particularly limited, and may be formed using any known coating method, such as spin coating, blade coating, ink jet method, printing method, roll coating method, spray coating method, and the like.
After the above-mentioned processes, the light emitting diode of the present embodiment, which is a white light emitting diode, can be obtained. As shown in fig. 1C, the light emitting diode of the present embodiment includes: a light emitting diode chip 11 having a first surface 111 and a second surface 112, wherein the first surface 111 is opposite to the second surface 112; two electrodes 12 disposed on the first surface 111 of the led chip 11; and a phosphor layer 13 disposed on the second surface 112 of the led chip 11.
In the present embodiment, the led chip 11 further includes a side surface 113 connected to the first surface 111 and the second surface 112, and the phosphor layer 13 is further disposed on the side surface 113. More specifically, in the present embodiment, the phosphor layer 13 is formed on all surfaces (including the second surface 112 and the side surface 113) of the led chip 11 except the first surface 111.
In the present embodiment, the light emitting diode further includes a protection layer 14, wherein the protection layer 14 is further disposed on the surface of the phosphor layer 13 corresponding to the second surface 112 and the side surface 113. More specifically, in the present embodiment, since the phosphor layer 13 is formed on the second surface 112 and the side surface 113 of the led chip 11, and the protection layer 14 is used to protect the phosphor layer 13, the protection layer 14 is also formed on the surface of the phosphor layer 13 corresponding to the second surface 112 and the side surface 113.
After the light emitting diode is manufactured as shown in fig. 1A to fig. 1C, the light emitting diode shown in fig. 1C may be disposed in a diffusion lens to complete the light emitting diode device of the present embodiment.
Fig. 2 is a schematic cross-sectional view of a light emitting diode device according to the present embodiment. As shown in fig. 2, the light emitting diode device of the present embodiment includes: a diffusion lens 23 having a lens body 231, a lens cavity 232 and a light-emitting surface 233; a light emitting diode 1 (i.e., the light emitting diode shown in fig. 1C) disposed in the lens cavity 232; and a light absorbing material disposed on a light path from the light emitted from the light emitting diode 1 to the light emitting surface 233 through the lens body 231, wherein the light absorbing material is a yellow light absorbing material.
As shown in fig. 1C, although white light can be obtained after mixing the blue light emitted by the led chip 11 and the yellow light emitted by the phosphor particles of the phosphor layer 13, in order to increase the color gamut of the white light led, in the light emitting diode of the present embodiment, a light absorbing material is used to absorb the stray light in the yellow wavelength range of the white light.
In the present embodiment, as shown in fig. 2, the lens body 231 includes a lens material and a light absorbing material. In other words, in the present embodiment, the lens body 231 is formed by a mixture of the lens material and the light absorbing material through a molding process. Wherein the molding process may be, for example, an injection molding process; however, the present application is not limited thereto. Therefore, when the light emitted from the led 1 passes through the lens body 231 and reaches the light emitting surface 233, the light absorbing material included in the lens body 231 can absorb the stray light in the yellow wavelength range, thereby improving the color gamut of the led device.
In the present embodiment, the lens material may be PVC, PC, PMMA or a mixture thereof; however, the present application is not limited thereto, and any other material having high transmittance and not affecting the light emitted from the led chip can be used as the lens material. In addition, in the embodiment, the light absorbing material is a yellow light absorbing material that absorbs light with a wavelength between 550nm and 610 nm. Here, examples of the yellow light absorbing material that can absorb light having a wavelength between 550nm and 610nm include, but are not limited to, triphenylmethane, cobalt blue, cobalt violet, or a mixture thereof.
Therefore, as shown in fig. 2, in the light emitting diode device of the present embodiment, by using the lens material mixed with the light absorbing material to fabricate the diffusion lens 23, more yellow stray light in the white light emitted by the light emitting diode 1 can be absorbed by the light absorbing material, thereby reducing the intensity of the yellow stray light emitted from the light emitting surface 233, and improving the color gamut of the light emitting diode device.
In addition, as shown in fig. 2, the led device of the present embodiment can be disposed on a printed circuit board 21, and a circuit 22 is disposed on the printed circuit board 21; the electrodes 12 (shown in fig. 1C) of the light emitting diode 1 are electrically connected to the wires 22.
Example 2
Fig. 3 is a schematic cross-sectional view of a light emitting diode device according to the present embodiment. The light emitting diode device of this embodiment is similar to that described in embodiment 1 except for the following points.
In the present embodiment, as shown in fig. 3, the lens body 231 of the diffusion lens 23 is formed of a lens material, and does not include a light absorbing material.
In addition, in the present embodiment, the light absorbing material 24 is disposed on the surface 232a of the lens cavity 232. In other words, in the present embodiment, the light absorbing material 24 is formed on the surface 232a of the lens cavity 232 in a thin film form, and the surface 232a of the lens cavity 232 is the light incident surface of the lens body 231. Here, the method of forming the thin film of the light absorbing material 24 is not particularly limited, and may be formed using any known coating method, for example, spin coating, doctor blade coating, inkjet method, printing method, roll coating method, spray coating method, and the like.
Therefore, as shown in fig. 3, in the light emitting diode device of the present embodiment, before the light emitted from the light emitting diode 1 enters the lens body 231, the stray light in the yellow wavelength range of the light reaching the surface 232a of the lens cavity 232 can be absorbed by the light absorbing material 24, so as to reduce the intensity of the yellow stray light emitted from the light emitting surface 233, and improve the color gamut of the light emitting diode device.
Example 3
Fig. 4 is a schematic cross-sectional view of a light emitting diode device of the present embodiment. The light emitting diode device of this embodiment is similar to that described in embodiment 2 except for the following points.
In the present embodiment, the light absorbing material 24 is disposed on the light emitting surface 233 of the lens body 231. In other words, in the present embodiment, the light absorbing material 24 is formed on the light emitting surface 233 of the lens body 231 in a thin film.
Therefore, as shown in fig. 4, in the light emitting diode device of the present embodiment, when the light emitted from the light emitting diode 1 passes through the lens body 231 and reaches the light emitting surface 233, the stray light in the yellow wavelength range of the light can be absorbed by the light absorbing material 24, so as to reduce the intensity of the stray light of yellow light emitted from the light emitting surface 233, and improve the color gamut of the light emitting diode device.
In the above embodiments of the present application, the light emitting surface 233 of the diffusion lens 23 has an arc shape. However, the present application is not limited thereto. In other embodiments of the present application, the diffusion lens 23 may have different shapes as long as the purpose of light diffusion is achieved.
Similarly, in the above embodiments of the present application, the lens cavity 232 of the diffusion lens 23 also has an arc-shaped outer shape. However, the present application is not limited thereto. In other embodiments of the present application, the lens cavity 232 may have different shapes as long as the purpose of light diffusion is achieved.
In addition, in the aforementioned embodiment of the present application, a single light emitting diode 1 is disposed in the lens cavity 232. However, the present application is not limited thereto. In other embodiments of the present application, a plurality of light emitting diodes 1 may be disposed in the lens cavity 232.
Moreover, the led structure suitable for the present application is not limited to the led structure described above, and can be adjusted according to the requirement. For example, in other embodiments of the present disclosure, the light emitting diode may be a bead type light emitting diode formed by using a fluorescent colloid layer.
Example 4
Fig. 5 is a schematic cross-sectional view of a direct type backlight module of this embodiment. As shown in fig. 5, the backlight module of the present embodiment includes: a reflective sheet 31; an optical film 32 disposed on the reflector 31; and a light emitting diode device 2 disposed between the reflective sheet 31 and the optical film 32. In this embodiment, the led device 2 can be any one of the led devices shown in embodiments 1 to 3.
In the present embodiment, the reflective sheet 31 also serves as a housing of the backlight module. In addition, although not shown, the optical film 32 may include films commonly used in backlight modules, such as a diffusion sheet, a prism sheet, a brightness enhancement sheet, etc.; however, the present application is not limited thereto, and the composition of the optical film 32 may be adjusted as needed.
Example 5
Fig. 6 is a schematic cross-sectional view of the display device of the present embodiment. As shown in fig. 6, the display device of the present embodiment includes: a backlight module 3; and a display panel 4 disposed on the backlight module 3. The backlight module 3 may be the backlight module shown in embodiment 4. Further, the display panel 4 may include: a first substrate 41; a second substrate 43 disposed opposite to the first substrate 41; and a display layer 42 disposed between the first substrate 41 and the second substrate 43. In the present embodiment, the display layer 42 may be a liquid crystal layer.
In one embodiment of the present invention, the first substrate 41 may be a thin film transistor substrate on which a thin film transistor structure (not shown) is disposed, and the second substrate 43 may be a color filter substrate on which a color filter layer (not shown) and a black matrix layer (not shown) are disposed. In another embodiment of the present invention, a color filter layer (not shown) may also be disposed on the first substrate 41, in which case the first substrate 41 is a thin film transistor (COA) substrate integrated with a color filter array. In another embodiment of the present invention, a black matrix layer (not shown) may also be disposed on the substrate 1, in which case the substrate 1 is a thin film transistor (BOA) integrated with a black matrix.
Test example
In this test example, the light emitting diode device of example 2 (shown in fig. 3) was used for the test. The phosphor used in the phosphor layer 13 (as shown in fig. 1C) of the led 1 is Potassium fluosilicate (KSF) phosphor red and beta-Sialon Eu2+Nitrogen oxide fluorescent green powder in weight ratio2:1, and the material of the protective layer 14 (shown in fig. 1C) is an optical protective adhesive. In addition, the material of the lens body 231 is PVC, and the light absorbing material 24 is a triphenylmethane-based basic dye. The experimental conditions of the comparative example are the same as those of the experimental example, differing only in that the diffusion lens 23 does not include a light absorbing material. Here, the spectra obtained in the comparative examples and the experimental examples were detected by an LED integrating sphere tester, and the color gamut obtained in the comparative examples and the experimental examples was detected by a color analyzer.
The results of the spectra obtained in the comparative example and the experimental example are shown in fig. 7A and 7B, respectively. As shown in fig. 7A, when the diffuser lens 23 does not include a light absorbing material, i.e., the surface of the lens cavity is free of a yellow light absorbing material, the NTSC color gamut value is 88%. When the diffuser lens 23 includes a light absorbing material, i.e., the surface of the lens cavity is coated with a yellow light absorbing material, as shown in fig. 7B, the NTSC color gamut value can be increased to 96%. This result shows that when the diffuser lens 23 includes a light-absorbing material, the parasitic light in the yellow wavelength range can be effectively reduced, thereby improving the color gamut of the led device.
The led device of the present application can be applied to a backlight module of any display device as a light source, wherein specific examples of the display device include, but are not limited to, a display, a mobile phone, a notebook computer, a video camera, a music player, a mobile navigation device, a television, and the like.
[ notation ] to show
1 light emitting diode 11 light emitting diode chip
111 first surface 112 second surface
113 side surface 12 electrode
13 phosphor layer 14 protection layer
2 led device 21 printed circuit board
22 line 23 diffusion lens
231 lens body 232 lens cavity
232a surface 233 light-emitting surface
24 light-absorbing material 3 backlight module
31 reflector 32 optical film
4 display panel 41 first substrate
42 display layer 43 second substrate
[ depositing of biological Material ]
None.

Claims (18)

1. A light emitting diode device, comprising:
a diffusion lens having a lens body, a lens cavity and a light-emitting surface;
a light emitting diode disposed in the lens cavity; and
and the light absorption material is arranged on a light path of light emitted by the light emitting diode passing through the lens body to the light emergent surface, wherein the light absorption material is a yellow light absorption material.
2. The light-emitting diode device according to claim 1, wherein the yellow light-absorbing material absorbs light having a wavelength of 550nm to 610 nm.
3. The light-emitting diode device according to claim 1, wherein the yellow light-absorbing material is a triphenylmethane, cobalt blue, cobalt violet, or a mixture thereof.
4. The light-emitting diode device of claim 1, wherein the lens body comprises a lens material and the light-absorbing material.
5. The light-emitting diode device of claim 1, wherein the light absorbing material is disposed on the light-exiting surface of the lens body.
6. The light emitting diode device of claim 1, wherein the light absorbing material is disposed on a surface of the lens cavity.
7. A backlight module, comprising:
a reflector plate;
the optical diaphragm is arranged on the reflecting sheet; and
a light emitting diode device disposed between the reflector sheet and the optical film and including:
a diffusion lens having a lens body, a lens cavity and a light-emitting surface;
a light emitting diode disposed in the lens cavity; and
and the light absorption material is arranged on a light path of light emitted by the light emitting diode passing through the lens body and reaching the light emergent surface, wherein the light absorption material is a yellow light absorption material.
8. The backlight module of claim 7, wherein the yellow light absorbing material absorbs light having a wavelength between 550nm and 610 nm.
9. The backlight module of claim 7, wherein the yellow light absorbing material is a triphenylmethane, cobalt blue, cobalt violet, or a mixture thereof.
10. The backlight module of claim 7, wherein the lens body comprises a lens material and the light absorbing material.
11. The backlight module of claim 7, wherein the light absorbing material is disposed on the light emitting surface of the lens body.
12. The backlight module of claim 7, wherein the light absorbing material is disposed on a surface of the lens cavity.
13. A display device, comprising:
a backlight module; and
the display panel is arranged on the backlight module;
wherein the backlight module comprises: a reflector plate; the optical diaphragm is arranged on the reflecting sheet; and a light emitting diode device disposed between the reflective sheet and the optical film and including:
a diffusion lens having a lens body, a lens cavity and a light-emitting surface;
a light emitting diode disposed in the lens cavity; and
and the light absorption material is arranged on a light path of light emitted by the light emitting diode passing through the lens body and reaching the light emergent surface, wherein the light absorption material is a yellow light absorption material.
14. The display device of claim 13, wherein the yellow light absorbing material absorbs light having a wavelength between 550nm and 610 nm.
15. The display device of claim 13, wherein the yellow light absorbing material is a triphenylmethane, cobalt blue, cobalt violet, or mixtures thereof.
16. The display device of claim 13, wherein the lens body comprises a lens material and the light absorbing material.
17. The display device of claim 13, wherein the light absorbing material is disposed on the light exit surface of the lens body.
18. The display device of claim 13, wherein the light absorbing material is disposed on a surface of the lens cavity.
CN201910886568.0A 2019-09-19 2019-09-19 Light emitting diode device, backlight module and display equipment comprising same Pending CN112526784A (en)

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Application Number Priority Date Filing Date Title
CN201910886568.0A CN112526784A (en) 2019-09-19 2019-09-19 Light emitting diode device, backlight module and display equipment comprising same

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001343756A (en) * 2000-05-30 2001-12-14 Toshiba Corp Exposure device
CN1345098A (en) * 2000-09-29 2002-04-17 西铁城电子股份有限公司 Luminous diode
CN102456805A (en) * 2010-10-22 2012-05-16 展晶科技(深圳)有限公司 Light-emitting diode
US20140070248A1 (en) * 2012-09-07 2014-03-13 Kabushiki Kaisha Toshiba Light emitting device and light emitting module
CN103851410A (en) * 2012-11-30 2014-06-11 鸿富锦精密工业（深圳）有限公司 Backlight module
CN105226170A (en) * 2014-07-01 2016-01-06 东贝光电科技股份有限公司 LED light-emitting structure applied to backlight source
CN106796974A (en) * 2014-08-06 2017-05-31 克利公司 The multilayer transition material of the lower conversion in for solid-state illumination
CN107870474A (en) * 2016-09-28 2018-04-03 三星电子株式会社 Display device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001343756A (en) * 2000-05-30 2001-12-14 Toshiba Corp Exposure device
CN1345098A (en) * 2000-09-29 2002-04-17 西铁城电子股份有限公司 Luminous diode
CN102456805A (en) * 2010-10-22 2012-05-16 展晶科技(深圳)有限公司 Light-emitting diode
US20140070248A1 (en) * 2012-09-07 2014-03-13 Kabushiki Kaisha Toshiba Light emitting device and light emitting module
CN103851410A (en) * 2012-11-30 2014-06-11 鸿富锦精密工业（深圳）有限公司 Backlight module
CN105226170A (en) * 2014-07-01 2016-01-06 东贝光电科技股份有限公司 LED light-emitting structure applied to backlight source
CN106796974A (en) * 2014-08-06 2017-05-31 克利公司 The multilayer transition material of the lower conversion in for solid-state illumination
CN107870474A (en) * 2016-09-28 2018-04-03 三星电子株式会社 Display device

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